CN1952210A - High-density plasma reinforced chemical vapour deposition and etching device - Google Patents
High-density plasma reinforced chemical vapour deposition and etching device Download PDFInfo
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- CN1952210A CN1952210A CN 200510094984 CN200510094984A CN1952210A CN 1952210 A CN1952210 A CN 1952210A CN 200510094984 CN200510094984 CN 200510094984 CN 200510094984 A CN200510094984 A CN 200510094984A CN 1952210 A CN1952210 A CN 1952210A
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Abstract
The invention discloses a high-density plasma bldy-enhanced chemical vapor deposition and etching equipment. It includes vacuum chamber (8) and its internal electrodes, and import and outlet (9, 4) linked to the vacuum chamber (8), in particular, the vacuum chamber (8), and its internal electrodes is installed levelly, electrodes are radio-frequency electrode(2) and the grounding electrode (5), which are plate-like and installed parallel set, radio-frequency electrode(2) and the grounding electrode (5) jacket set a coils (1) parallel with them, import and outlet (9, 4)is separately set at two ends of the vacuum chamber (8) ,the said radio-frequency electrode(2) is on top of the grounding electrode (5), with the same area with grounding electrode (5), the said grounding electrode (5) on top of the radio frequency electrode (2) with half the area of radio frequency electrode (2). It can be normally started and generate steady glow in a vacuum pressure of less than 1 mm.
Description
Technical field the present invention relates to a kind of vapor deposition and etching apparatus, especially high-density plasma reinforced chemical vapour deposition and etching apparatus.
Background technology plasma-reinforced chemical vapor deposition and lithographic technique are one of critical processes during semi-conductor discrete device and unicircuit are made, and its purpose is respectively at grow multiple deielectric-coating or remove corresponding deielectric-coating on request of semiconductor surface.Its principle is under subatmospheric, reactant gases is subjected to exciting of radio-frequency power supply, produces ionization and forms the plasma body of being made up of charged electronics and ion, and the gas in the reaction cavity is under the bump of electronics, except being transformed into ion, also absorbing energy and form a large amount of active groups; These electromotive forces are higher than the active group and the plasma body of ground-electrode electromotive force in the reaction cavity, under gravitational acting in conjunction, to be deposited on the substrate surface on the ground-electrode and form deielectric-coating, or etch away the deielectric-coating of the substrate surface on the ground-electrode that is positioned at place, radio-frequency electrode top.In the reaction cavity of the deposit of routine and etching apparatus, operating air pressure generally at hundreds of milli torr to several torrs, the number of active group accounts for 0.01～0.1%, and the active group in the high density plasma can reach 10%.Along with reducing of dimensions of semiconductor devices, all be difficult to deposit or etching for the gap that higher depth-to-width ratio is arranged, pin hole or cavity very easily appear in the process of processing.The way that solves is that operating pressure to the 1～10 milli torrs that reduce in the reaction cavity increase the mean free path of molecule, thereby reduce the collision to figure section sidewall effectively., the shortcoming of thereupon bringing is that the molecule number reduces in the unit volume, has caused the minimizing of plasma density, so the speed of deposit and etching has also reduced because operating pressure reduces.One of approach that solves need produce enough plasma bodys, to obtain higher deposit and etch rate under lower air pressure.In order to reach this purpose, people have done various trials and effort, as " a kind of high density plasma process unit " that discloses among the disclosed Chinese utility model patent specification sheets CN 2249451Y on March 12nd, 1997.It is intended to enlarge the inductive spacing of low-pressure gas in the insulating boot, so that the more subatmospheric in the air chamber can stably produce highdensity plasma body.Constituting in the air chamber seat that is communicated with inlet, outlet of it is equipped with the slide glass electrode, and the upper end of air chamber seat joins with the tower shape insulating boot that is multistage layer, and the insulating boot periphery is wound with the multiturn radio-frequency coil, and coil links to each other with radio-frequency power supply through matching circuit.During use, the gas in the radio-frequency coil excitation insulating boot produces plasma body.But this device exists many weak points, at first, complex structure, cost height, the profile of insulating boot that is multistage layer tower shape is numerous and diverse, is around in the outer multiturn radio-frequency coil of insulating boot and also must could be connected with radio-frequency power supply through matching circuit, and these all make its cost high; Secondly, the tower shape insulating boot of multistage layer is made difficulty, and particularly it is to use on vacuum apparatus; Once more, excessive as the radio-frequency coil and the interelectrode distance of slide glass of radio-frequency electrode, cause the output voltage need of radio-frequency power supply higher, make that the voltage range of device is higher, thereby its cost need be increased again; Inferior again, be subjected to the restriction of multistage layer tower shape insulating boot profile, not equidistant between the line that radio-frequency coil causes leaving the irregular of bigger space and coil cabling between the coil at adjacent stratum place, make the plasma body that is subjected to its excitation and produces inhomogeneous and arc discharge very easily takes place, and then influence is treated the quality of deposit or etching substrate and easily it is burnt; Again time, the position of the inlet, outlet that is connected with the air chamber seat is improper, causes the new reactant gases majority that replenishes directly to be siphoned away by the air outlet, can not participate in as much as possible exciting and produces active group; At last, because of matching circuit needs often to regulate its output voltage according to the kind of reactant gases, and make it use inconvenience.
The summary of the invention the technical problem to be solved in the present invention provides a kind of simple for structure, practical, high-density plasma reinforced chemical vapour deposition easy to use and etching apparatus for overcoming weak point of the prior art.
The technical scheme that is adopted comprises vacuum chamber and its electrode that is built-in with, and the inlet, outlet that is connected with vacuum chamber, particularly 1), said vacuum chamber and its electrode that is built-in with all are horizontally disposed with; 2), said electrode is radio-frequency electrode and ground-electrode, said radio-frequency electrode and ground-electrode are tabular and are arranged in parallel; 3), said radio-frequency electrode that is parallel to each other and ground-electrode are set with the coil of setting in parallel outward; 4), the said inlet, outlet two ends of vacuum chamber that are placed in.
As the further improvement of technical scheme, described mounting coil is outside vacuum chamber; Described coil is an Encircling coils; Described coil is made of the coil of three sections equal lengths, and the number of turn density of its two end-coil is greater than the number of turn density of stage casing coil; The number of turn of two end-coils of described coil is the twice of the number of turn of stage casing coil; After being connected in series mutually or being connected in parallel, described three sections coils are electrically connected with the electric current constant current source; Described radio-frequency electrode is positioned at the top of ground-electrode, and the radio-frequency electrode area equates with ground electrode area; Described ground-electrode is positioned at the top of radio-frequency electrode, and ground electrode area is the radio-frequency electrode area half.
Beneficial effect with respect to prior art is, one, the electrode of vacuum chamber and Qi Nei is horizontally disposed with, electrode adopts and is tabular and radio-frequency electrode that is parallel to each other and ground-electrode, both made one-piece construction natural and tripping and succinct, thereby made easily that cost was low, reduce radio frequency operation voltage again widely, also stopped the generation of arc discharge phenomenon; They are two years old, be sleeved on the outer also coil of setting in parallel of radio-frequency electrode and ground-electrode, the electric field acting in conjunction that magnetic field that is produced and radio-frequency electrode and ground-electrode produce, make two interelectrode electronics do columned cyclotron motion and be not only translational motion under electric field, thereby greatly increased the cross section that reactant gases is ionized, strengthened the probability of electronics and other particle encounters, strengthened the density of plasma body widely, after tested, under less than the subatmospheric of 1 milli torr starter and produce stable glow discharge normally still, and be used for characteristic line breadth less than 0.25 micron technology.Simultaneously, because plasma density significantly increases, also improved the speed of deposit or etching; Its three, with the be placed in two ends of vacuum chamber of inlet, outlet, make the new reactant gases that replenishes can continuously the approach radio-frequency electrode and ground-electrode between, and be ionized to plasma body and form a large amount of active groups; Its four, mounting coil outside vacuum chamber, except that still improving significantly the density of plasma body, is also made the easier lifting of vacuum tightness of equipment, reduced the use cost of equipment; They are five years old, coil adopts the syllogic coil of two ends number of turn density greater than stage casing number of turn density, and it is electrically connected with the electric current constant current source, guaranteed the homogeneity in magnetic field between ground-electrode and radio-frequency electrode, make treat deposit or the etching substrate that are arranged on the ground-electrode be in a uniform plasma body constantly, this utmost point is beneficial to the lifting of deielectric-coating quality on the substrate; Its six, make radio-frequency electrode be positioned at the top of ground-electrode, and the radio-frequency electrode area equates with ground electrode area, or make ground-electrode be positioned at the top of radio-frequency electrode, and ground electrode area is the radio-frequency electrode area half, and the equipment that makes can be used for deposit, can be used for etching again.
Description of drawings is described in further detail optimal way of the present invention below in conjunction with accompanying drawing.
Fig. 1 is a kind of basic structure synoptic diagram of the present invention.
Embodiment is referring to Fig. 1, and columned vacuum chamber 8 is horizontally disposed with, its outer coil 1 that is set with setting in parallel.Coil 1 is an Encircling coils, three sections compositions of total equal length, and the number of turn of two end-coils wherein is the twice of the number of turn of stage casing coil; After being connected in series mutually, these three sections coils are electrically connected with electric current constant current source 7.Vacuum chamber 8 be built-in with setting in parallel and be parallel to each other, be flat radio-frequency electrode 2 and ground-electrode 5, wherein, radio-frequency electrode 2 is positioned at the top of ground-electrode 5, and radio-frequency electrode 2 areas equate with ground-electrode 5 areas (when being positioned at the top of radio-frequency electrode 2 as if ground-electrode 5, then ground-electrode 5 areas are half of radio-frequency electrode 2 areas), be equipped with the substrate 3 for the treatment of deposit on the ground-electrode 5; Radio-frequency electrode 2 and ground-electrode 5 are electrically connected with radio-frequency power supply 6, the earth respectively.The two ends of vacuum chamber 8 are communicated with inlet mouth 9 and air outlet 4 respectively.
During use, when the vacuum tightness in the vacuum chamber 8 is less than the subatmospheric of 1 milli torr, open radio-frequency power supply 6 and electric current constant current source 7, the subatmospheric in the vacuum chamber 8 still can and produce stable glow discharge by starter normally.At this moment, if only open radio-frequency power supply 6, then the subatmospheric in the vacuum chamber 8 can not be by starter.
Obviously, those skilled in the art can carry out various changes and modification to high-density plasma reinforced chemical vapour deposition of the present invention and etching apparatus and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1, a kind of high-density plasma reinforced chemical vapour deposition and etching apparatus comprise vacuum chamber (8) and its electrode that is built-in with, and the inlet, outlet (9,4) that is connected with vacuum chamber (8), it is characterized in that:
1.1, said vacuum chamber (8) and its electrode that is built-in with all be horizontally disposed with;
1.2, said electrode is radio-frequency electrode (2) and ground-electrode (5), said radio-frequency electrode (2) and ground-electrode (5) are tabular and are arranged in parallel;
1.3, the outer coil (1) that is set with setting in parallel of the said radio-frequency electrode that is parallel to each other (2) and ground-electrode (5);
1.4, the be placed in two ends of vacuum chamber (8) of said inlet, outlet (9,4).
2, high-density plasma reinforced chemical vapour deposition according to claim 1 and etching apparatus is characterized in that coil (1) is set in outside the vacuum chamber (8).
3, high-density plasma reinforced chemical vapour deposition according to claim 2 and etching apparatus is characterized in that coil (1) is an Encircling coils.
4, high-density plasma reinforced chemical vapour deposition according to claim 3 and etching apparatus is characterized in that coil (1) is made of the coil of three sections equal lengths, and the number of turn density of its two end-coil is greater than the number of turn density of stage casing coil.
5, high-density plasma reinforced chemical vapour deposition according to claim 4 and etching apparatus, the number of turn that it is characterized in that two end-coils of coil (1) is the twice of the number of turn of stage casing coil.
6, high-density plasma reinforced chemical vapour deposition according to claim 5 and etching apparatus is characterized in that being electrically connected with electric current constant current source (7) after three sections coils (1) are connected in series mutually or are connected in parallel.
7, high-density plasma reinforced chemical vapour deposition according to claim 1 and etching apparatus is characterized in that radio-frequency electrode (2) is positioned at the top of ground-electrode (5), and radio-frequency electrode (2) area equates with ground-electrode (5) area.
8, high-density plasma reinforced chemical vapour deposition according to claim 1 and etching apparatus is characterized in that ground-electrode (5) is positioned at the top of radio-frequency electrode (2), and ground-electrode (5) area is radio-frequency electrode (2) area half.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100949845A CN100485085C (en) | 2005-10-20 | 2005-10-20 | High-density plasma reinforced chemical vapour deposition and etching device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100949845A CN100485085C (en) | 2005-10-20 | 2005-10-20 | High-density plasma reinforced chemical vapour deposition and etching device |
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| CN1952210A true CN1952210A (en) | 2007-04-25 |
| CN100485085C CN100485085C (en) | 2009-05-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107779845A (en) * | 2017-10-30 | 2018-03-09 | 武汉华星光电半导体显示技术有限公司 | Chemical vapor depsotition equipment and film build method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1059716C (en) * | 1995-12-13 | 2000-12-20 | 武汉大学 | Method for synthesizing Beta-C3N4 superhard film material using radio-freq chemical gas-phase sedimentation |
| US6126778A (en) * | 1998-07-22 | 2000-10-03 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
| JP4355157B2 (en) * | 2003-03-31 | 2009-10-28 | 東京エレクトロン株式会社 | Plasma processing method, plasma processing apparatus, and magnetic field generator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107779845A (en) * | 2017-10-30 | 2018-03-09 | 武汉华星光电半导体显示技术有限公司 | Chemical vapor depsotition equipment and film build method |
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