CN1916745A - Base plate of thin film transistor, and repairing method - Google Patents
Base plate of thin film transistor, and repairing method Download PDFInfo
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- CN1916745A CN1916745A CN 200510090746 CN200510090746A CN1916745A CN 1916745 A CN1916745 A CN 1916745A CN 200510090746 CN200510090746 CN 200510090746 CN 200510090746 A CN200510090746 A CN 200510090746A CN 1916745 A CN1916745 A CN 1916745A
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- film transistor
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Abstract
A film transistor array base plate is prepared as forming a repairing line to be used late on as repairing purpose on said base plate white data line is formed on said base plate, superposing projection and branch sharing common line separately with data line and repairing line partially. Its repairing method is also disclosed.
Description
Technical field
The present invention relates to a kind of array base palte and method for repairing and mending thereof, and particularly relates to a kind of thin-film transistor array base-plate and method for repairing and mending thereof.
Background technology
In order to cooperate modern life pattern, it is thin light that the volume of video or image device day by day is tending towards.Traditional cathode-ray tube, though still have its advantage, but it need take large volume and very power consumption, therefore, have that high picture quality, space utilization efficient are good, (Thin Film Transistor Liquid Crystal Display TFT-LCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.
Thin-film transistor array base-plate normally forms the first metal layer (grid layer) on glass substrate; first dielectric layer (gate insulator); semiconductor layer; second metal level (source) and second dielectric layer (protective seam); and on substrate, form many data wirings (data line); plurality of scanning wirings (scan line); many shared distributions (common line); a plurality of thin film transistor (TFT)s (comprise grid; semiconductor island structure and source/drain) and a plurality of pixel electrodes (pixel electrode); wherein grid is electrically connected with scan wiring, source/drain and data wiring; pixel electrode is electrically connected.Scan wiring and shared distribution for example belong to the part of the first metal layer, semiconductor island structure belongs to the part of semiconductor layer, and data wiring belongs to the part of second metal level, in addition, can be electrically insulated from each other with first dielectric layer between scan wiring and the data wiring, and above data wiring, also can cover second dielectric layer.
In the manufacture process of thin-film transistor array base-plate, may produce a flaw (dot defect) or line flaw problems such as (line defect).The general contingent situation of line flaw for example has: shared distribution broken string, shared distribution and data wiring short circuit, scan wiring broken string and data wiring broken string etc., when above-mentioned line flaw takes place in thin-film transistor array base-plate, if do not repair at unusual part, to make the manufacturing qualification rate of thin-film transistor array base-plate decline to a great extent, and how to repair for these line flaws, become the important topic that present LCD is made.
Summary of the invention
Therefore, purpose of the present invention just provides a kind of thin-film transistor array base-plate, this thin-film transistor array base-plate can be repaired for line defects such as shared distribution broken string, shared distribution and data wiring short circuit, scan wiring broken string and data wiring broken strings, and then improves the manufacturing qualification rate of this thin-film transistor array base-plate.
Another object of the present invention just provides a kind of method for repairing and mending that is applicable to above-mentioned thin-film transistor array base-plate, this method for repairing and mending is in order to having that shared distribution broken string, shared distribution break with data wiring short circuit, scan wiring and the thin-film transistor array base-plate of line defects such as data wiring broken string is repaired, and then improves the manufacturing qualification rate of this thin-film transistor array base-plate.
Based on above-mentioned purpose, the present invention proposes a kind of thin-film transistor array base-plate, mainly is made of substrate, plurality of scanning wirings, many data wirings, many shared distributions, a plurality of thin film transistor (TFT), a plurality of pixel electrode and many repairing line segments.These scan wirings and these data wirings are arranged on the substrate, and these scan wirings and these data wirings mark off a plurality of pixel regions that are arrayed, this shared distribution scan wiring therewith is parallel and be arranged alternately on substrate, each thin film transistor (TFT) is positioned at corresponding pixel region, and thin film transistor (TFT) drives by scan wiring and data wiring, each pixel electrode is positioned at corresponding pixel region, to be electrically connected with corresponding thin film transistor (TFT), each patch cord section is positioned at least one scan wiring top, and be arranged alternately, and respectively repair the line segment two ends and overlap with adjacent two shared distributions of scan wiring both sides respectively with data wiring.
According to the described thin-film transistor array base-plate of preferred embodiment of the present invention, wherein the both sides of each shared distribution have outward extending a plurality of branch respectively, and each branch is in close proximity to its pairing data wiring.
According to the described thin-film transistor array base-plate of preferred embodiment of the present invention, wherein respectively repair the line segment two ends respectively with it component of pairing shared distribution overlapping.
According to the described thin-film transistor array base-plate of preferred embodiment of the present invention, wherein repairing line segment and data wiring for example is to utilize same technology manufacturing.
The present invention also proposes a kind of method for repairing and mending of thin-film transistor array base-plate, it is suitable for the thin-film transistor array base-plate of the invention described above is repaired, wherein thin-film transistor array base-plate has flaw, this flaw opens circuit shared distribution generation, this method for repairing and mending is that the shared distribution that is electrically connected these flaw two ends is respectively repaired line segment in first and repaired line segment with second, and be electrically connected respectively this first repair line segment therewith the second repairing line segment in another shared distribution.
The present invention also proposes a kind of method for repairing and mending of thin-film transistor array base-plate, it is suitable for the thin-film transistor array base-plate of the invention described above is repaired, wherein thin-film transistor array base-plate has flaw, this flaw makes data wiring and shared distribution produce short circuit, this method for repairing and mending is the shared distribution that electrically completely cuts off these flaw two ends, the shared distribution that is electrically connected these flaw two ends is respectively repaired line segment in first and is repaired line segment with second, and be electrically connected respectively this first repair line segment therewith the second repairing line segment in another shared distribution.
The present invention also proposes a kind of method for repairing and mending of thin-film transistor array base-plate, it is suitable for the thin-film transistor array base-plate of the invention described above is repaired, wherein thin-film transistor array base-plate has flaw, this flaw opens circuit the scan wiring generation, this method for repairing and mending is that the scan wiring that is electrically connected these flaw two ends is respectively repaired the line segment and the second repairing line segment in first, be electrically connected this first repairing line segment respectively and second repair line segment therewith in shared distribution, and the part of electrically isolated this shared distribution, form and substitute line segment, wherein this alternative line segment is electrically connected this first repairing line segment and second repairs line segment therewith.
According to the described thin-film transistor array base-plate of preferred embodiment of the present invention, each branch of wherein shared distribution has protuberance respectively, and protuberance extends to the top of its pairing data wiring, and data wiring overlaps therewith.
The present invention also proposes a kind of method for repairing and mending of thin-film transistor array base-plate, it is suitable for the thin-film transistor array base-plate of the invention described above is repaired, wherein thin-film transistor array base-plate has flaw, this flaw opens circuit the data wiring generation, this method for repairing and mending is to be electrically connected the data wiring at these flaw two ends respectively in first branch of the first shared distribution and second branch of the second shared distribution, and utilize to repair line segment and be electrically connected second branch therewith of this first branch, and electrically isolated this first shared distribution first branch and electrically isolated this second shared distribution second branch therewith therewith.
According to the method for repairing and mending of the described thin-film transistor array base-plate of preferred embodiment of the present invention, wherein electrically isolated method comprises that laser removes.
According to the method for repairing and mending of the described thin-film transistor array base-plate of preferred embodiment of the present invention, wherein the method for Dian Lianjieing comprises laser welding.
The present invention is because when forming data wiring, form simultaneously as many that repair usefulness and repair line segment, each patch cord section is positioned at least one scan wiring top, and be arranged alternately with data wiring, and respectively repairing the line segment two ends overlaps with adjacent two shared distributions of scan wiring both sides respectively, when repairing, mode by laser welding connects the repairing line segment together with wired electric, be aided with the repairing step that laser removes, therefore can repair for shared distribution broken string, shared distribution and line flaws such as data wiring short circuit and scan wiring broken string.
In addition, each branch of the shared distribution of the present invention has protuberance respectively, and this protuberance extends to the top of its pairing data wiring, and data wiring overlaps therewith.When repairing, the mode by laser welding connects the shared therewith wired electric of this data wiring, is aided with the repairing step that laser removes, and therefore can repair for the line flaw of data wiring broken string.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the partial structurtes synoptic diagram of first embodiment of the invention.
Fig. 2 is the structural representation of second embodiment of the invention.
Fig. 3 is for repairing the synoptic diagram of shared distribution broken string with the present invention.
Fig. 4 is for to repair the synoptic diagram of shared distribution and data wiring short circuit with the present invention.
Fig. 5 is for repairing the synoptic diagram of scan wiring broken string with the present invention.
Fig. 6 is the structural representation of third embodiment of the invention.
Fig. 7 is for repairing the synoptic diagram of data wiring broken string with the present invention.
The main element description of symbols
10: thin-film transistor array base-plate
11: glass substrate
12: the first shared distributions
14: scan wiring
13,15,17,19: overlap
16: the second shared distributions
18: the first repairing line segments
20: data wiring
22: the second repairing line segments
24: semiconductor island structure
26: source electrode
28: drain electrode
32: the first branches
33: branch
34: the second branches
36: the three branches
38: the four branches
42: the first overlapping portions
44: the second overlapping portions
46: the three overlapping portions
48: the folded portions of quadruple
50: trip point
52: first
54: second portion
56: short dot
58,60: cut-out point
62: trip point
64: third part
66: the four parts
68: the five overlapping portions
70: the folded portions of sixfold
72,74: cut-out point
76: substitute line segment
78: the first protuberances
80: the second protuberances
82: the folded portions of septuple
84: the folded portions of eightfold
86: trip point
88: the seven parts
90: the eight parts
Embodiment
Thin-film transistor array base-plate comprises substrate, plurality of scanning wirings, many data wirings, many shared distributions, a plurality of thin film transistor (TFT), a plurality of pixel electrodes usually and constitutes.Plurality of scanning wirings and many data wirings are arranged on the substrate, and these scan wirings and these data wirings mark off a plurality of pixel regions that are arrayed, each thin film transistor (TFT) is positioned at corresponding pixel region, and each thin film transistor (TFT) drives by scan wiring and data wiring.Each pixel electrode is positioned at corresponding pixel region, to be electrically connected with corresponding thin film transistor (TFT).
Fig. 1 is the partial structurtes synoptic diagram of first embodiment of the invention.Please refer to Fig. 1, the first shared distribution 12 of thin-film transistor array base-plate 10, scan wiring 14 is parallel with the adjacent second shared distribution 16 and be arranged alternately on glass substrate 11 for example, first repairs line segment 18, data wiring 20 and second is repaired line segment 22 and is arranged alternately on glass substrate 11 for example, the first repairing line segment 18 and second is repaired line segment 22 and is positioned at scan wiring 14 tops, and first repair line segment 18 two ends respectively with the adjacent shared distribution 12 of scan wiring 14 both sides, 16 overlap 13,15, and second repair line segment 22 two ends respectively with the adjacent shared distribution 12 of scan wiring 14 both sides, 16 overlap 17,19, the semiconductor island structure 24 of thin film transistor (TFT) is positioned at scan wiring 14 tops, the source electrode 26 of thin film transistor (TFT) is positioned at semiconductor island structure 24 tops with drain electrode 28, wherein drains 28 to be electrically connected with data wiring 20.
The first shared distribution 12, scan wiring 14 and the second shared distribution 16 belong to the part of the first metal layer, and data wiring 20, the first repairing line segment 18 and the second repairing line segment 22 belong to the part of second metal level, promptly the first shared distribution 12, scan wiring 14 and the second shared distribution 16 can utilize same technology manufacturing, and data wiring 20, first repairs line segment 18 and the second repairing line segment 22 can utilize same technology manufacturing.In addition, for example be electrically insulated from each other between the first metal layer and second metal level with dielectric layer.Therefore, in normal condition, 20 of scan wiring 14 and data wirings are electrically isolated mutually, and repairing line segment 18,22 and shared distribution 12,16 are also electrically isolated mutually.
Fig. 2 is the structural representation of second embodiment of the invention.Please refer to Fig. 2, the structure of present embodiment and first embodiment are roughly the same, and different is the structure of shared distribution.For example, a side of the first shared distribution 12 has outward extending first branch 32, and opposite side has branch 33, and these branches are in close proximity to its pairing data wiring 20, and a side of the second shared distribution 16 has outward extending second branch 34.Overlap with first branch 32 and second branch 34 respectively and form first overlapping 42 and second overlapping 44, the second two ends of repairing line segment 22 and the 3rd branch 36 and the 4th branch 38 overlap respectively the 3rd overlapping 46 of formation and quadruple folded portion 48 in first two ends of repairing line segment 18.
Shared distribution broken string, shared distribution and line flaws such as data wiring short circuit and scan wiring broken string may take place because of the flaw or the other factors of technology in thin-film transistor array base-plate.The present invention is in hereinafter will be at above-mentioned line flaw, proposes the method for repairing with the disclosed preparing structure of second embodiment, but is not in order to limiting the present invention, and identical method also is equally applicable to the disclosed structure of first embodiment.
At first, be the situation that broken string takes place shared distribution of repairing, Fig. 3 is for repairing the synoptic diagram of shared distribution broken string with the present invention.Please refer to Fig. 3, shared distribution is first 52 and second portion 54 because of trip point 50 electrical isolation, and wherein first 52 is electrically connected with first branch 32, and second portion 54 is electrically connected with the 4th branch 38.Its method for repairing and mending for example is the back side from thin-film transistor array base-plate 10, the mode of utilizing laser welding is repaired line segment 18 in first overlapping 42 welding first branch 32 and first, and then first 52 is electrically connected in first overlapping 42 with the first repairing line segment 18.Similarly, can utilize second overlapping 44, method with laser welding, be electrically connected first and repair the line segment 18 and the second shared distribution 16, utilize the 3rd overlapping 46, be electrically connected the second shared distribution 16 and second and repair line segment 22, and utilize quadruple to fold portion 48, be electrically connected second and repair line segment 22 and second portion 54.So, the first 52 of shared distribution and second portion 54 can be repaired line segment 18 by first branch 32, first, the second adjacent shared distribution 16, second repairs line segment 22 and the 4th branch 38 is electrically connected mutually, reaches the purpose of reparation.
Then, be the situation that shared distribution of reparation and data wiring are short-circuited, Fig. 4 is for to repair the synoptic diagram of shared distribution and data wiring short circuit with the present invention.Please refer to Fig. 4, the data wiring 20 and the shared distribution 12 of thin-film transistor array base-plate 10 are electrically connected on short dot 56, its method for repairing and mending is to form two cut-out points 58,60 earlier in short dot 56 two ends with the method that laser removes, by electrically isolated shared distribution 12 of cut-out point 58,60 and data wiring 20.It is first 52 and second portion 54 that cut-out point 58,60 electrically completely cuts off shared distribution 12 simultaneously, wherein first 52 is electrically connected with first branch 32, second portion 54 is electrically connected with the 4th branch 38, identical with the method for the shared distribution broken string of above-mentioned repairing, the mode that can utilize laser welding is repaired line segment 18 in first overlapping 42 welding first branch 32 and first, and then first 52 is electrically connected in first overlapping 42 with the first repairing line segment 18.Similarly, can utilize second overlapping 44, method with laser welding, be electrically connected first and repair the line segment 18 and the second shared distribution 16, utilize the 3rd overlapping 46, be electrically connected the second shared distribution 16 and second and repair line segment 22, and utilize quadruple to fold portion 48, be electrically connected second and repair line segment 22 and second portion 54.The first 52 of shared distribution like this and second portion 54 can be repaired line segment 18 by first branch 32, first, the second adjacent shared distribution 16, second repairs line segment 22 and the 4th branch 38 is electrically connected mutually, reaches the purpose of reparation.
Then, be the situation that broken string takes place scan wiring of repairing, Fig. 5 is for repairing the synoptic diagram of scan wiring broken string with the present invention.Please refer to Fig. 5, the scan wiring 14 of thin-film transistor array base-plate 10 is third part 64 and the 4th part 66 because of trip point 62 electrical isolation.Its method for repairing and mending for example is the back side from thin-film transistor array base-plate 10, the mode of utilizing laser welding is repaired line segment 18 in first overlapping 42 welding first branch 32 and first, and laser welding third part 64 and first repairs line segment 18 in the 5th overlapping 68, and first branch 32 is electrically connected with third part 64.Similarly, the mode that can utilize laser welding is repaired line segment 22 in folded 48 weldings the 4th branch 38 of portion of quadruple with second, and laser welding the 4th part 66 folds portion 70 with the second repairing line segment 22 in sixfold, and the 4th branch 38 is electrically connected with the 4th part 66.Then, the method that removes with laser forms two cut-out points 72,74 in the first shared distribution 12, and electrically the part of the isolated first shared distribution 12 forms and substitutes line segment 76, wherein substitutes line segment 76 and is electrically connected first branch 32 and the 4th branch 38.So, the third part 64 of scan wiring 14 can be repaired line segment 18, first branch 32, alternative line segment 76, the 4th branch 38 and the second repairing line segment 22 by first with the 4th part 66 and is electrically connected mutually, reaches the purpose of reparation.
Fig. 6 is the structural representation of third embodiment of the invention.Please refer to Fig. 6, the structure of present embodiment and second embodiment are roughly the same, different is the structure of shared distribution, for example, first branch 32 and second branch 34 have first protuberance 78 and second protuberance 80 respectively, and protuberance 78,80 extends to the top of its pairing data wiring 20, forms the folded portion 82 of septuple and folds portion 84 with eightfold and overlap respectively with data wiring 20.
Hereinafter the situation of broken string will take place at data wiring, the method that proposition is repaired with the disclosed preparing structure of the 3rd embodiment, but be not in order to limit the present invention.
Fig. 7 is for repairing the synoptic diagram of data wiring broken string with the present invention.Please refer to Fig. 7, the data wiring 20 of thin-film transistor array base-plate 10 is the 7th part 88 and the 8th part 90 because of trip point 86 electrical isolation.Its method for repairing and mending for example is the back side from thin-film transistor array base-plate 10, utilizes the mode of laser welding to fold portion's 82 weldings the 7th part 88 and first protuberance 78 in septuple, and then the 7th part 88 is electrically connected in the folded portion 82 of septuple with first branch 32.Similarly, can utilize first overlapping 42, with the method for laser welding, be electrically connected first branch 32 and first and repair line segment 18, utilize second overlapping 44, be electrically connected first and repair the line segment 18 and second branch 34, and utilize eightfold to fold portion 84, be electrically connected second branch 34 and the 8th part 90.So, the 7th part 88 of data wiring 20 and the 8th part 90 can be repaired line segment 18 by first branch 32, the first, second branch 34 is electrically connected, and reaches the purpose of reparation.
What deserves to be mentioned is, because repairing line segment of the present invention belongs to the part of second metal level, usually has lighttight characteristic, and be arranged between each pixel region, therefore can bring into play function as black matrix" (Black Matrix), cover the light leak between adjacent display pixels, improve the contrast of LCD color.
In sum, thin-film transistor array base-plate of the present invention and method for repairing and mending thereof have following feature and advantage at least:
(1) takes place that shared distribution broken string, shared distribution break with data wiring short circuit, scan wiring and during line defect such as data wiring broken string when thin-film transistor array base-plate, only need with the specific lap of laser welding, and be aided with the repairing step that laser removes, can repair above-mentioned line flaw, thereby help to improve whole manufacturing qualification rate.
(2) repairing line segment of the present invention and data wiring belong to second metal level, therefore repair line segment and data wiring can utilize same technology manufacturing, can be in order to repair thin-film transistor array base-plate, but can not increase the number of technology, and the repairing line segment can be brought into play the function as black matrix", the contrast that improves the LCD color.
(3) shared distribution branch of the present invention and protuberance thereof, it makes the shape only need change shared distribution, can be in order to repairing thin-film transistor array base-plate, but can not increase the number of technology.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (13)
1. thin-film transistor array base-plate is characterized in that comprising:
Substrate;
Plurality of scanning wirings is arranged on this substrate;
Many data wirings are arranged on this substrate, and above-mentioned these data wirings and above-mentioned these scan wirings mark off a plurality of pixel regions that are arrayed on this substrate;
Many shared distributions, parallel with above-mentioned these scan wirings and be arranged alternately on this substrate;
A plurality of thin film transistor (TFT)s are arranged at respectively in above-mentioned these pixel regions, and are electrically connected to its pairing this scan wiring and this data wiring;
A plurality of pixel electrodes are arranged at respectively in above-mentioned these pixel regions, and are electrically connected to its pairing this thin film transistor (TFT); And
A plurality of repairing line segments are positioned at least one scan wiring top, and are arranged alternately with above-mentioned these data wirings, and respectively these repairing line segment two ends overlap with adjacent two shared distributions of these scan wiring both sides respectively.
2. thin-film transistor array base-plate according to claim 1 is characterized in that respectively the both sides of this shared distribution have outward extending a plurality of branch respectively, and respectively this branch is in close proximity to its pairing this data wiring.
3. thin-film transistor array base-plate according to claim 2, it is characterized in that respectively these repairing line segment two ends respectively with it above-mentioned these components of pairing above-mentioned these shared distributions overlapping.
4. thin-film transistor array base-plate according to claim 2 is characterized in that respectively this branch has protuberance respectively, and this protuberance extends to the top of its pairing this data wiring, and overlaps with this data wiring.
5. thin-film transistor array base-plate according to claim 1 is characterized in that above-mentioned these are repaired line segment and above-mentioned these data wirings are to be positioned at same rete.
6. the method for repairing and mending of a thin-film transistor array base-plate, be suitable for the described thin-film transistor array base-plate of claim 1 is repaired, wherein the shared distribution of this thin-film transistor array base-plate has flaw, and this flaw opens circuit this shared distribution generation, it is characterized in that this method for repairing and mending comprises:
This shared distribution that is electrically connected these flaw two ends is respectively repaired the line segment and the second repairing line segment in first; And
Be electrically connected this first repairing line segment and this second repairing line segment respectively in another shared distribution.
7. the method for repairing and mending of thin-film transistor array base-plate according to claim 6 is characterized in that the method for this electrical connection comprises laser welding.
8. the method for repairing and mending of a thin-film transistor array base-plate, be suitable for the described thin-film transistor array base-plate of claim 1 is repaired, wherein the data wiring of this thin-film transistor array base-plate and shared wiring closet have flaw, this flaw makes the shared distribution of this data wiring and this produce short circuit, it is characterized in that this method for repairing and mending comprises:
In this flaw, electrically isolated this shared distribution is two parts;
The two parts that are electrically connected this shared distribution are respectively repaired the line segment and the second repairing line segment in first; And
Be electrically connected this first repairing line segment and this second repairing line segment respectively in another shared distribution.
9. the method for repairing and mending of thin-film transistor array base-plate according to claim 8 is characterized in that this electrically isolated method comprises that laser removes.
10. the method for repairing and mending of thin-film transistor array base-plate according to claim 8 is characterized in that the method for this electrical connection comprises laser welding.
11. the method for repairing and mending of a thin-film transistor array base-plate, be suitable for the described thin-film transistor array base-plate of claim 1 is repaired, wherein the scan wiring of this thin-film transistor array base-plate has flaw, and this flaw opens circuit this scan wiring generation, it is characterized in that this method for repairing and mending comprises:
This scan wiring that is electrically connected these flaw two ends is respectively repaired the line segment and the second repairing line segment in first;
Be electrically connected this first repairing line segment and this second repairing line segment respectively in shared distribution; And
Electrically completely cut off the part of this shared distribution, formation substitutes line segment, wherein should substitute line segment and be electrically connected this first repairing line segment and this second repairing line segment.
12. the method for repairing and mending of a thin-film transistor array base-plate, be suitable for the described thin-film transistor array base-plate of claim 4 is repaired, wherein the data wiring of this thin-film transistor array base-plate has flaw, and this flaw opens circuit this data wiring generation, it is characterized in that this method for repairing and mending comprises:
This data wiring that is electrically connected these flaw two ends respectively is in first branch of the first shared distribution and second branch of the second shared distribution;
Utilize the repairing line segment to be electrically connected this first branch and this second branch; And
Electrically isolated this first shared distribution and this first branch, and electrically isolated this second shared distribution and this second branch.
13. the method for repairing and mending of thin-film transistor array base-plate according to claim 12 is characterized in that this this data wiring that is electrically connected these flaw two ends respectively is to be electrically connected this data wiring at these flaw two ends respectively in first protuberance of this first branch and second protuberance of this second branch in this first branch with the step of this second branch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510090746 CN1916745A (en) | 2005-08-15 | 2005-08-15 | Base plate of thin film transistor, and repairing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510090746 CN1916745A (en) | 2005-08-15 | 2005-08-15 | Base plate of thin film transistor, and repairing method |
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| CN1916745A true CN1916745A (en) | 2007-02-21 |
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|---|---|---|---|
| CN 200510090746 Pending CN1916745A (en) | 2005-08-15 | 2005-08-15 | Base plate of thin film transistor, and repairing method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8325288B2 (en) | 2009-04-17 | 2012-12-04 | Chunghwa Picture Tubes, Ltd. | Display panel having repair structure and method of repairing display panel |
| CN103247245A (en) * | 2012-02-03 | 2013-08-14 | 元太科技工业股份有限公司 | Display panel circuit structure |
| WO2014205856A1 (en) * | 2013-06-27 | 2014-12-31 | 深圳市华星光电技术有限公司 | Circuit repair structure and method |
| CN104298035A (en) * | 2014-09-23 | 2015-01-21 | 京东方科技集团股份有限公司 | Array substrate, method for repairing broken data line of array substrate and display device |
| CN105607306A (en) * | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
| CN109188815A (en) * | 2018-10-18 | 2019-01-11 | 信利半导体有限公司 | Array substrate and display panel |
-
2005
- 2005-08-15 CN CN 200510090746 patent/CN1916745A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8325288B2 (en) | 2009-04-17 | 2012-12-04 | Chunghwa Picture Tubes, Ltd. | Display panel having repair structure and method of repairing display panel |
| CN103247245A (en) * | 2012-02-03 | 2013-08-14 | 元太科技工业股份有限公司 | Display panel circuit structure |
| CN103247245B (en) * | 2012-02-03 | 2015-12-16 | 元太科技工业股份有限公司 | display panel circuit structure |
| WO2014205856A1 (en) * | 2013-06-27 | 2014-12-31 | 深圳市华星光电技术有限公司 | Circuit repair structure and method |
| US9559054B2 (en) | 2013-06-27 | 2017-01-31 | Shenzehn China Star Optoelectronics Technology Co., Ltd | Repairing line structure and circuit repairing method using same |
| CN104298035A (en) * | 2014-09-23 | 2015-01-21 | 京东方科技集团股份有限公司 | Array substrate, method for repairing broken data line of array substrate and display device |
| CN105607306A (en) * | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
| CN109188815A (en) * | 2018-10-18 | 2019-01-11 | 信利半导体有限公司 | Array substrate and display panel |
| CN109188815B (en) * | 2018-10-18 | 2021-06-08 | 信利半导体有限公司 | Array substrate and display panel |
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