CN101030583A - Thin-film transistor array and its repairing method - Google Patents
Thin-film transistor array and its repairing method Download PDFInfo
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- CN101030583A CN101030583A CN 200610058322 CN200610058322A CN101030583A CN 101030583 A CN101030583 A CN 101030583A CN 200610058322 CN200610058322 CN 200610058322 CN 200610058322 A CN200610058322 A CN 200610058322A CN 101030583 A CN101030583 A CN 101030583A
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Abstract
The invention is concerned with the thin film transistor array, includes the base plate, several thin film transistor and several pixel electrode: sets the thin film transistor on the base plate respectively, which each thin film transistor consists of the grid, the semiconductor layer, the source electrode and the drain electrode; sets the grid on the base plate, which the grid is with the controlling part, the connecting part and the capacitance compensation part, the connecting part connects between the controlling part and the capacitance compensation part. There is the first overlap area between one end of the drain electrode and the controlling part of the grid that places a premium on the first parasitic capacitance. There is the second overlap area between another end of the drain electrode and the capacitance compensation part of the grid that places a premium on the second parasitic capacitance. The sum between the first parasitic capacitance and the second parasitic capacitance is the fixed value.
Description
Technical field
(thin film transistor TFT), and is particularly related to a kind of thin film transistor (TFT) array and method for repairing and mending thereof that improves the brightness uniformity of display panels to the present invention relates to a kind of thin-film transistor.
Background technology
The progressive rapidly tremendous progress that is indebted to semiconductor element or display unit mostly of multimedia society.With regard to display, have that high display quality, space utilization efficient are good, (thin filmtransistor liquid crystal display TFT-LCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.
Thin Film Transistor-LCD mainly is made of thin film transistor (TFT) array, colored filter (color filter) and liquid crystal layer (liquid crystal layer).Fig. 1 is the schematic top plan view of known thin film transistor (TFT) array.Please refer to Fig. 1, thin film transistor (TFT) array 100 is made of a plurality of dot structures 110 with arrayed.Wherein, each dot structure 110 is all formed by scan wiring (scan line) 112, data wiring (date line) 114, thin-film transistor 116 and with 118 of the pixel electrodes (pixel electrode) of thin-film transistor 116 corresponding settings.
From the above, thin-film transistor 116 is intended for the switch element of dot structure 110, scan wiring 112 and data wiring 114 then are to be used to provide the suitable operating voltage of its selected dot structure 110, the show image to drive each dot structure 110 respectively.
Fig. 2 is a kind of schematic equivalent circuit of single pixel of known Thin Film Transistor-LCD.Please refer to Fig. 2, in the single pixel of known Thin Film Transistor-LCD, comprise thin-film transistor 116, liquid crystal capacitance C usually
LCAnd storage capacitors (storagecapacitance) C
St
Please be simultaneously with reference to Fig. 1 and Fig. 2, liquid crystal capacitance C
LCBe to be coupled to form by common electrode (common electrode) (not shown) on pixel electrode on the thin film transistor (TFT) array 100 118 and the colored filter.Storage capacitors C
StBe to be positioned on the thin film transistor (TFT) array 100, and this storage capacitors C
StBe and liquid crystal capacitance C
LCIn parallel.In addition, the grid G of thin-film transistor 116, source S and drain D respectively with scan wiring 112, data wiring 114 and liquid crystal capacitance C
LCIn pixel electrode 118 connect.And, owing between the grid G of thin-film transistor 116 and the drain D zone that overlaps each other is arranged, therefore between grid G and drain D, can there be gate-to-drain parasitic capacitance (parasitic capacitance) C
Gd
Referring again to Fig. 1 and Fig. 2, owing to be applied to liquid crystal capacitance C
LCOn voltage (just putting on the voltage on pixel electrode 118 and the common electrode) and the light transmittance of liquid crystal molecule between have particular kind of relationship, therefore be applied to liquid crystal capacitance C as long as control according to picture to display
LCOn voltage, can make display show predetermined picture.Wherein, when thin-film transistor 116 cuts out, liquid crystal capacitance C
LCOn voltage be to keep certain value (just being in the holding state), but because gate-to-drain parasitic capacitance C
GdExistence, liquid crystal capacitance C
LCOn the voltage that kept will change and change (just so-called coupling effect) to some extent along with the signal on the data wiring 114, thereby make liquid crystal capacitance C
LCOn the original set point of voltage deviation that kept.This variation in voltage amount is called feed-trough voltage (feed-through voltage) Δ Vp, and it can be expressed as:
Wherein Δ Vg is the good fortune of shaking that puts on the pulse voltage on the scan wiring 112.
In present thin film transistor (TFT) array technology, be the exposure technology of carrying out thin film transistor (TFT) array with the spliced photo etched mask of step-by-step exposure machine mostly, therefore in exposure process, the position that the offset deviation amount when board moves will cause formed pattern in each exposure area (shot) is difference to some extent.Particularly between each exposure area, the overlapping area of the grid G of thin-film transistor 116 and drain D (see figure 1) not simultaneously, with the gate-to-drain parasitic capacitance C that makes in each exposure area
GdDifference causes the feed-trough voltage AVp in each exposure area inequality, and then produces the uneven problem of display brightness in procedure for displaying.
Summary of the invention
One of the present invention purpose provides a kind of thin film transistor (TFT) array, to solve the inconsistent problem of feed-trough voltage that the exposure technology error causes each pixel.
Another object of the present invention provides a kind of method for repairing and mending of thin film transistor (TFT) array, with when display produces bright spot, the thin film transistor (TFT) array of display is repaired, and then is eliminated bright spot.
For reaching above-mentioned or other purpose, the present invention proposes a kind of thin film transistor (TFT) array, comprises substrate, a plurality of thin-film transistor and a plurality of pixel electrode.Wherein, distinguish on the substrate that a plurality of pixel regions, these thin-film transistors are arranged then is to be arranged in the pixel region respectively.Each thin-film transistor comprises grid, semiconductor layer, source electrode and drain electrode.Wherein, grid is arranged on the substrate, and has control part, connecting portion and capacitance compensation portion, and connecting portion is to be connected between control part and the capacitance compensation portion.Semiconductor layer is to be arranged at the grid top, and source electrode then is to be arranged at respectively on the part semiconductor layer with drain electrode, and is formed with passage in the semiconductor layer between source electrode and the drain electrode.In addition, having first overlapping region between an end of drain electrode and the control part of grid and bring out first parasitic capacitance, then is to have second overlapping region and bring out second parasitic capacitance between the capacitance compensation portion of the other end of drain electrode and grid.And, first parasitic capacitance and second parasitic capacitance with perseverance be definite value.In addition, these pixel electrodes also are to be arranged in the pixel region respectively, and are electrically connected to corresponding thin-film transistor.Wherein, in each pixel region, first parasitic capacitance and the second parasitic capacitance sum are definite value.
In one of the present invention embodiment, first overlapping region of above-mentioned each thin-film transistor and the area of second overlapping region and be definite value.
In one of the present invention embodiment, the control part of above-mentioned grid and capacitance compensation portion are respectively strip.And this strip control part for example is that the capacitance compensation portion with strip is parallel to each other.
In one of the present invention embodiment, above-mentioned source electrode also has extension, and this extension is overlapping with the capacitance compensation portion of part.
In one of the present invention embodiment, above-mentioned passage for example is to be extended towards the connecting portion top bending of grid by the control part top of grid.
In one of the present invention embodiment, above-mentioned semiconductor layer for example is to be positioned on the control part and capacitance compensation portion of grid.
The present invention also proposes a kind of method for repairing and mending of thin film transistor (TFT) array, and it is suitable for above-mentioned thin film transistor (TFT) array is repaired.This method for repairing and mending is when between the extension of the capacitance compensation portion of the grid of above-mentioned thin-film transistor and drain electrode or source electrode electrostatic breakdown taking place, and cuts off the connecting portion of grid earlier, so that capacitance compensation portion and control part electric insulation.Then, the extension of welding capacitance compensation portion and drain electrode or source electrode.
In one of the present invention embodiment, the connecting portion of above-mentioned grid for example is to cut off with the method for laser cutting.
In one of the present invention embodiment, the extension of above-mentioned capacitance compensation portion and drain electrode or source electrode for example is to carry out welding with the method for laser welding.
The present invention adopts the thin-film transistor of the grid with particular design, therefore can solve known display panel because of the not good problem of thin film transistor (TFT) array exposure technology display quality that error causes.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the schematic top plan view of known thin film transistor (TFT) array.
Fig. 2 is a kind of schematic equivalent circuit of single pixel of known Thin Film Transistor-LCD.
Fig. 3 is the partial top view of thin film transistor (TFT) array in the first embodiment of the present invention.
Fig. 4 is the generalized section of the thin film transistor (TFT) array of Fig. 3 along I-I ' line.
Repairing schematic diagram when Fig. 5 is the thin film transistor (TFT) array generation electrostatic breakdown of Fig. 3.
Fig. 6 is the local schematic top plan view of thin film transistor (TFT) array in the second embodiment of the present invention.
The main element description of symbols
100,300,600: thin film transistor (TFT) array
110: dot structure
112,304: scan wiring
114,306: data wiring
116,310,610: thin-film transistor
118,320: pixel electrode
302: substrate
312, G: grid
312a: the control part of grid
312b: the connecting portion of grid
312c: the capacitance compensation portion of grid
313: gate insulation layer
314: semiconductor layer
314a, 614a: passage
316,616, S: source electrode
316a, 318a: ohmic contact layer
316b, 318b: conductor layer
318,618, D: drain electrode
A
1: first overlapping region
A
2: second overlapping region
C
St: storage capacitors
C
Gd, C
Gd1, C
Gd2: parasitic capacitance
C
LC: liquid crystal capacitance
L: line of cut
Embodiment
Fig. 3 is the partial top view of thin film transistor (TFT) array in the first embodiment of the present invention.Fig. 4 then is the generalized section of the thin film transistor (TFT) array of Fig. 3 along I-I ' line.Please refer to Fig. 3, thin film transistor (TFT) array 300 is made of substrate 302, a plurality of thin-film transistor 310 and a plurality of pixel electrode 320.Wherein, be to be provided with scan wiring 304 and data wiring 306 on the substrate 302, and scan wiring 304 and data wiring 306 are to distinguish a plurality of pixel regions 308 on substrate 302, and these thin-film transistors 310 promptly are to be separately positioned in each pixel region 308 with pixel electrode 320.Below will describe the structure of thin-film transistor 310 in detail.
Please be simultaneously with reference to Fig. 3 and Fig. 4, thin-film transistor 310 mainly is by grid 312, semiconductor layer 314, source electrode 316 and drains 318 and constitute.Wherein, grid 312 is to be arranged on the substrate 302, and is electrically connected to scan wiring 304.Specifically, grid 312 has control part 312a, connecting portion 312b and the 312c of capacitance compensation portion, and wherein connecting portion 312b is connected between control part 312a and the 312c of capacitance compensation portion.And in the present embodiment, the control part 312a of grid 312 and the 312c of capacitance compensation portion are strip, and control part 312a and the 312c of capacitance compensation portion for example are parallel to each other.
At this because grid 312 is with finishing in the technology with scan wiring 304, so can be directly with the part of scan wiring 304 control part 312a as grid 312.Certainly, the person of ordinary skill in the field will be appreciated that, the control part 312a of grid 312 also can be additionally from scan wiring 304 extended structures, and it is that part institute by scan wiring 304 is constituted that the present invention is not defined as the control part 312a of grid 312 it.
From the above, 314 of semiconductor layers are to be arranged at grid 312 tops.In the present embodiment, semiconductor layer 314 for example is the top that is arranged at the control part 312a and the 312c of capacitance compensation portion of grid 312.Certainly, the person of ordinary skill in the field should be understood that and also has one deck gate insulation layer 313 between grid 312 and the semiconductor layer 314.Source electrode 316 is arranged at respectively on the semiconductor layer 314 of part with drain electrode 318, and source electrode 316 is to be electrically connected to data wiring 306, drain electrode is to be electrically connected to pixel electrode 320, and the semiconductor layer 314 between source electrode 316 and the drain electrode 318 promptly is the passage 314a as thin-film transistor 310.
What deserves to be mentioned is that the source electrode 316 of thin-film transistor 310 for example is to have the extension that is overlapped on the partition capacitance compensation section 312c.And in thin film transistor (TFT) array 300, the extension of source electrode 316 for example is that a part of institute by data wiring 306 is constituted.In other words, in the present embodiment, data wiring 306 is to be overlapped on the partition capacitance compensation section 312c.
It should be noted that between the control part 312a of drain electrode 318 end and grid 312 and have the first overlapping region A
1, thereby between drain electrode 318 and control part 312a, form the first parasitic capacitance C
Gd1Drain electrode 318 the other end then be and the 312c of capacitance compensation portion of grid 312 between have the second overlapping region A
2, thereby between drain electrode 318 and the 312c of capacitance compensation portion, form the second parasitic capacitance C
Gd2And, the first parasitic capacitance C
Gd1With the second parasitic capacitance C
Gd2With perseverance be definite value.In other words, in each pixel region 308 of thin film transistor (TFT) array 300, the first parasitic capacitance C
Gd1With the second parasitic capacitance C
Gd2And be definite value.
In general, the thickness between drain electrode 318 and the 312c of capacitance compensation portion of grid 312 should with drain 318 with the control part 312a of grid 312 between thickness equate.In this case, the first parasitic capacitance C
Gd1With the second parasitic capacitance C
Gd2Size depend on the first overlapping region A respectively
1With the second overlapping region A
2The area size.For making the person of ordinary skill in the field understand the present invention more, hereinafter will further specify above-mentioned thin film transistor (TFT) array 300 and how the parasitic capacitance of each pixel region 308 can be maintained definite value.
Please referring again to Fig. 3, in forming the exposure technology of drain electrode 318 and source electrode 316, when photo etched mask produces error on alignment precision, thereby make drain electrode 318 on the bearing of trend of data wiring 306, produce displacement, and cause the first overlapping region A
1Area during less than default value, the second overlapping region A
2Area then can be greater than default value.And, the second overlapping region A
2The area that is increased should with the first overlapping region A
1The area that is reduced equates.
Similarly, on alignment precision, produce error and make the first overlapping region A when photo etched mask
1During greater than default value, the second overlapping region A then
2Can be less than default value.In other words, even each pixel region 308 internal cause fabrication errors and the first overlapping region A with different area
1And the second overlapping region A
2, but in each pixel region 308, the first overlapping region A
1With the second overlapping region A
2Area and perseverance be definite value.Thus, the first parasitic capacitance C in each pixel region 308
Gd1With the second parasitic capacitance C
Gd2And promptly perseverance be definite value, make to have identical feed-trough voltage Δ Vp in each pixel region 308.And then improve the briliancy uniformity of the display floater that thin film transistor (TFT) array 300 constituted effectively.
Repairing schematic diagram when Fig. 5 is the thin film transistor (TFT) array generation electrostatic breakdown of Fig. 3.Please refer to Fig. 5, when causing the display generation to put bad phenomenon when thin film transistor (TFT) array 300 generation abnormal operations, can cut off the connecting portion 312b of grid 312 along line of cut L, follow the overlapping of drain electrode 318 of welding again and the 312c of capacitance compensation portion and data wiring 306 and the 312c of capacitance compensation portion, so that impose on the pixel electrode 320 voltage directly and the signal on the data wiring 306 be connected, and reach the purpose of repairing.Wherein, present embodiment for example is to cut off connecting portion 312b with the method for laser cutting.And welding drain electrode 318 for example is a laser welding with the method for the overlapping of the 312c of capacitance compensation portion and data wiring 306 and grid 312.
Fig. 6 is the local schematic top plan view of thin film transistor (TFT) array among the present invention's second embodiment.Please refer to Fig. 6, thin film transistor (TFT) array 600 is made of substrate 302, a plurality of thin-film transistor 610 and a plurality of pixel electrode 320, and thin film transistor (TFT) array 600 is similar to the described thin film transistor (TFT) array of first embodiment 300 haply, and among Fig. 6 with Fig. 3 components identical, promptly show it with the label identical with Fig. 3.Hereinafter will be different from thin film transistor (TFT) array 300 parts at thin film transistor (TFT) array 600 is illustrated.
In the present embodiment, the source electrode 616 of thin-film transistor 610 and 618 passage 614a of drain electrode are extended towards the connecting portion 312a top bending of grid 312 by the control part 312b top of grid 312.In other words, the passage 614a of present embodiment is class L type.Therefore, have under the prerequisite of identical channel width (channel width) at the passage 614a and the traditional line type passage of class L type, the drain electrode 618 of present embodiment can have short length, and then reduces the parasitic capacitance between drain electrode 618 and the grid 312.
What deserves to be mentioned is, if described and so on the L type passage 614a of design present embodiment in known thin film transistor (TFT) array, because the end of passage 614a is the edge of the control part 312a of adjacent gate 312, therefore be vulnerable to the irradiation of the light that backlight sent of display, cause in passage 614a, producing light leakage current.Yet, in the present invention's thin film transistor (TFT) array 600, though the end of passage 614a is the edge of the control part 312a of adjacent gate 312, but the connecting portion 312b that is connected with control part 312a can block the light that backlight sends, avoiding this irradiate light to passage 614a, and then prevent to produce in the passage 614a light leakage current.
In sum, the present invention has following characteristics:
1. in thin film transistor (TFT) array of the present invention, because first parasitic capacitance is with second parasitic capacitance and all identical in each pixel region, so all pixel regions all have identical feed-trough voltage.Thus, can make by the present invention's the display that thin film transistor (TFT) array constituted and keep superior display quality.
2. the present invention's thin film transistor (TFT) array can pass through simple mending course, solves single pixel and takes place to show the problem that lost efficacy, and then reach the effect of repairing bright spot.
3. the present invention and so on L type passage can increase channel width under the prerequisite that does not increase the gate-to-drain parasitic capacitance, to improve the drain current of thin-film transistor.And the present invention can block the light that the display backlight source is sent by the connecting portion and the capacitance compensation portion of grid, avoids it to shine passage, and then prevents to produce in the passage light leakage current.
4. the present invention's thin-film transistor still can be finished by existing five road photo etched mask technologies, need not additionally increase technology, does not therefore need more known high cost of manufacture.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking the claim person of defining.
Claims (10)
1. thin film transistor (TFT) array is characterized in that comprising:
Substrate has a plurality of pixel regions;
A plurality of thin-film transistors be arranged at respectively in its pairing above-mentioned these pixel regions, and respectively this thin-film transistor comprise:
Grid is arranged on this substrate, and this grid has control part, connecting portion and capacitance compensation portion, and wherein this connecting portion is to be connected between this control part and this capacitance compensation portion;
Semiconductor layer is arranged at this grid top;
Source electrode is arranged on this semiconductor layer of part;
Drain electrode, be arranged on this semiconductor layer of part, and form passage in the semiconductor layer between this source electrode and this drain electrode, and have first overlapping region between an end of this drain electrode and this control part of this grid and bring out first parasitic capacitance, have second overlapping region between this capacitance compensation portion of the other end of this drain electrode and this grid and bring out second parasitic capacitance
Wherein in this pixel region respectively, this first parasitic capacitance and this second parasitic capacitance and be definite value; And
A plurality of pixel electrodes are arranged at respectively in its pairing this pixel region, and above-mentioned these pixel electrodes are electrically connected to this corresponding thin-film transistor respectively.
2. thin film transistor (TFT) array according to claim 1 is characterized in that in this pixel region respectively, the area of this first overlapping region and this second overlapping region and be definite value.
3. thin film transistor (TFT) array according to claim 1 is characterized in that respectively this control part and this capacitance compensation portion of this grid are respectively strip.
4. thin film transistor (TFT) array according to claim 3 is characterized in that respectively this control part and this capacitance compensation portion of this grid are parallel to each other.
5. thin film transistor (TFT) array according to claim 1 it is characterized in that this source electrode also has extension in this pixel region respectively, and this extension is overlapping with this capacitance compensation portion of part.
6. thin film transistor (TFT) array according to claim 1 is characterized in that in this pixel region respectively, and this passage is to be extended towards this connecting portion top bending of this grid by this control part top of this grid.
7. thin film transistor (TFT) array according to claim 1 is characterized in that this semiconductor layer is to be positioned at this control part of this grid and the top of this capacitance compensation portion.
8. the method for repairing and mending of a thin film transistor (TFT) array, be suitable for claim 1 a described thin film transistor (TFT) array is repaired, when between this extension of this capacitance compensation portion of one in above-mentioned these grids and this source electrode maybe should drain electrostatic breakdown taking place, this method for repairing and mending comprises:
Cut off this connecting portion of this grid, so that this control part electric insulation of this capacitance compensation portion of this grid and this grid; And
This extension of this capacitance compensation portion of welding and this drain electrode or this source electrode.
9. the method for repairing and mending of thin film transistor (TFT) array according to claim 8, the method that it is characterized in that cutting off this connecting portion of this grid comprises laser cutting.
10. the method for repairing and mending of thin film transistor (TFT) array according to claim 8 is characterized in that the method for this extension of this capacitance compensation portion of welding and this drain electrode or this source electrode comprises laser welding.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100583227A CN100502051C (en) | 2006-03-01 | 2006-03-01 | Thin-film transistor array and its repairing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100583227A CN100502051C (en) | 2006-03-01 | 2006-03-01 | Thin-film transistor array and its repairing method |
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| CN100502051C CN100502051C (en) | 2009-06-17 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226945B (en) * | 2008-02-18 | 2010-07-07 | 友达光电股份有限公司 | Thin-film transistor array substrate |
| CN101750826B (en) * | 2009-12-28 | 2011-09-14 | 深超光电（深圳）有限公司 | Pixel structure |
| CN102790093A (en) * | 2011-05-16 | 2012-11-21 | 上海天马微电子有限公司 | Thin film transistor pixel structure and thin film transistor display device |
| CN102879967A (en) * | 2012-10-22 | 2013-01-16 | 深圳市华星光电技术有限公司 | Driving circuit of liquid crystal panel |
| WO2014201716A1 (en) * | 2013-06-17 | 2014-12-24 | 深圳市华星光电技术有限公司 | Channel forming method for thin-film transistor and compensation circuit |
| CN105405401A (en) * | 2015-11-11 | 2016-03-16 | 友达光电股份有限公司 | Pixel circuit |
| CN107546143A (en) * | 2016-06-28 | 2018-01-05 | 意法半导体(鲁塞)公司 | Low residual quantity part in electronic chip |
| CN112993041A (en) * | 2021-02-03 | 2021-06-18 | 重庆先进光电显示技术研究院 | Liquid crystal display panel, thin film transistor and manufacturing method thereof |
| WO2023216298A1 (en) * | 2022-05-11 | 2023-11-16 | 深圳市华星光电半导体显示技术有限公司 | Special-shaped thin film transistor and array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226945B (en) * | 2008-02-18 | 2010-07-07 | 友达光电股份有限公司 | Thin-film transistor array substrate |
| CN101750826B (en) * | 2009-12-28 | 2011-09-14 | 深超光电（深圳）有限公司 | Pixel structure |
| CN102790093B (en) * | 2011-05-16 | 2015-04-29 | 上海天马微电子有限公司 | Thin film transistor pixel structure and thin film transistor display device |
| CN102790093A (en) * | 2011-05-16 | 2012-11-21 | 上海天马微电子有限公司 | Thin film transistor pixel structure and thin film transistor display device |
| CN102879967A (en) * | 2012-10-22 | 2013-01-16 | 深圳市华星光电技术有限公司 | Driving circuit of liquid crystal panel |
| CN102879967B (en) * | 2012-10-22 | 2015-02-04 | 深圳市华星光电技术有限公司 | Driving circuit of liquid crystal panel |
| WO2014201716A1 (en) * | 2013-06-17 | 2014-12-24 | 深圳市华星光电技术有限公司 | Channel forming method for thin-film transistor and compensation circuit |
| CN105405401A (en) * | 2015-11-11 | 2016-03-16 | 友达光电股份有限公司 | Pixel circuit |
| CN107546143A (en) * | 2016-06-28 | 2018-01-05 | 意法半导体(鲁塞)公司 | Low residual quantity part in electronic chip |
| US11244893B2 (en) | 2016-06-28 | 2022-02-08 | Stmicroelectronics (Rousset) Sas | Low-dispersion component in an electronic chip |
| US12087683B2 (en) | 2016-06-28 | 2024-09-10 | Stmicroelectronics (Rousset) Sas | Low-dispersion component in an electronic chip |
| CN112993041A (en) * | 2021-02-03 | 2021-06-18 | 重庆先进光电显示技术研究院 | Liquid crystal display panel, thin film transistor and manufacturing method thereof |
| WO2023216298A1 (en) * | 2022-05-11 | 2023-11-16 | 深圳市华星光电半导体显示技术有限公司 | Special-shaped thin film transistor and array substrate |
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| Publication number | Publication date |
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| CN100502051C (en) | 2009-06-17 |
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