CN1959984A - Thin film transistor, pixel structure, and method for repairing pixel structure - Google Patents
Thin film transistor, pixel structure, and method for repairing pixel structure Download PDFInfo
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- CN1959984A CN1959984A CN 200510115564 CN200510115564A CN1959984A CN 1959984 A CN1959984 A CN 1959984A CN 200510115564 CN200510115564 CN 200510115564 CN 200510115564 A CN200510115564 A CN 200510115564A CN 1959984 A CN1959984 A CN 1959984A
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Abstract
The dot structure includes scanning lines, grid pattern, first dielectric layer, channel layer, source pole, drain pole, data lines, second dielectric layer, and pixel electrodes. The grid pattern is connected to scanning lines electrically, and the opening is formed in the grid pattern. Filling in the opening, the first dielectric layer covers scanning lines and the grid pattern. The channel layer is setup on the first dielectric layer, and the source pole and drain pole are setup on the channel layer. The drain pole is located above the opening. The source pole is connected to data lines electrically, and pixel electrode is connected to drain pole electrically. Since size of overlap area between grid pattern and drain pole can be maintained and uncharged, thus parasitic capacitance between grid pole and drain pole can be uncharged so as to raise display quality of liquid crystal display. The disclosed method for repairing pixel structure repairs defect pixel to dark spot.
Description
Technical field
The present invention relates to a kind of dot structure, and be particularly related to a kind of method for repairing and mending of dot structure and the thin-film transistor structure in the dot structure.
Background technology
Social now multimedia technology is quite flourishing, benefits from the progress of semiconductor element or display unit mostly.With regard to display, have that high image quality, space utilization efficient are good, (Thin Film Transistor Liquid CrystalDisplay TFT-LCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.
General Thin Film Transistor-LCD is made of thin-film transistor array base-plate, subtend substrate and the liquid crystal layer that is sandwiched between aforementioned two substrates.Wherein, thin-film transistor array base-plate comprises that mainly substrate, arrayed thin-film transistor, pixel electrode (PixelElectrode), the scan line (Scan line) on substrate constitutes with data wire (Date line).Generally speaking, scan line can transfer to signal corresponding dot structure with data wire, to reach the purpose of demonstration.
Fig. 1 is a known pixel structure partial schematic diagram, and Fig. 2 is corresponding to the generalized section of A-A ' hatching among Fig. 1.Please be simultaneously with reference to Fig. 1 and Fig. 2, known dot structure 120 mainly comprises thin-film transistor 122, pixel electrode 124, scan line 126 and data wire 128.Thin-film transistor 122 is electrically connected on pixel electrode 124.Particularly, as shown in Figure 2, the thin-film transistor 122 that is positioned on the substrate 110 mainly comprises grid 122a, channel layer 122b, source electrode 122c and drain electrode 122d.This thin-film transistor 122 belongs to the structure of bottom-gate (Bottom Gate), and the drain electrode 122d of thin-film transistor 122 is electrically connected with pixel electrode 124.As shown in Figure 1, scan line 126 can transfer to appropriate voltage thin-film transistor 122 with data wire 128, and voltage is sent to pixel electrode 124 and then reaches the purpose of demonstration by thin-film transistor 122.
What merit attention is that the overlapping up and down zone 10 of grid 122a and drain electrode 122d can form gate-to-drain parasitic capacitance (Cgd) effect usually.The value of this gate-to-drain parasitic capacitance is directly proportional with the area size of overlapping region 10.And generally when making thin-film transistor, because other factorses such as error in the photo etched mask contraposition or board vibrations, tend to cause grid 122a and drain electrode 122d up and down the area size of overlapping region 10 change, cause the gate-to-drain parasitic capacitance value to produce and change.Yet pixel feedback voltage (Feed-Through Voltage) can change along with the gate-to-drain parasitic capacitance value.And the change of pixel feedback voltage can make the display quality of Thin Film Transistor-LCD be affected.
In addition, because of the error on the manufacturing process, cause the dot structure of part to produce defective sometimes, and can do to repair action to it usually for the defective pixels structure.For example, when Thin Film Transistor-LCD is the pattern of the white picture of normality (normally white), in general, the method of inpainted pixels structure 120 is that drain electrode 122d is electrically connected with scan line 126, make scan line 126 be electrically connected with pixel electrode 124, and then make dot structure 120 repair into dim spot with defective by drain electrode 122d.But in fact, because the voltage difference between the electrode on scan line 126 (pixel electrode 124) and the subtend substrate is excessive, therefore often cause the liquid crystal molecule in the display panels excessively to reverse, and make defective pixels can present grey point, therefore defective pixels can't be repaired into dim spot.
Summary of the invention
In view of the foregoing, purpose of the present invention just provides a kind of dot structure, and it has stable quality.
A further object of the present invention just provides a kind of method for repairing and mending, but the dot structure of its rebacked invention, to improve product percent of pass.
Another purpose of the present invention just provides a kind of thin-film transistor, the gate-to-drain parasitic capacitance value that it can be maintained fixed.
The present invention proposes a kind of dot structure, and it comprises scan line, gate pattern, first dielectric layer, channel layer, source electrode, drain electrode, data wire, second dielectric layer and pixel electrode.Wherein, gate pattern can be electrically connected with scan line, and is formed with opening in the gate pattern, and first dielectric layer covers scan line and gate pattern and fills up opening.In addition, channel layer is arranged on first dielectric layer of gate pattern top, and source electrode and drain electrode are arranged on the channel layer.Wherein, drain electrode is positioned at the top of opening.In addition, data wire is arranged on first dielectric layer, and source electrode is electrically connected with data wire, and second dielectric layer covers source electrode, drain electrode and data wire.On the other hand, pixel electrode is arranged on second dielectric layer, and pixel electrode can be electrically connected with drain electrode.
The dot structure that the present invention's preferred embodiment is described also comprises line stretcher, and it is electrically connected with data wire, and line stretcher can extend to the top of gate pattern.
The dot structure that the present invention's preferred embodiment is described also comprises ohmic contact layer, and it is arranged between channel layer and source electrode and the drain electrode.
The dot structure that the present invention's preferred embodiment is described, wherein the material of channel layer for example is to comprise amorphous silicon.
The dot structure that the present invention's preferred embodiment is described, wherein the material of first dielectric layer for example is to comprise silicon nitride, silica or silicon oxynitride.
The dot structure that the present invention's preferable enforcement institute example is stated, wherein the material of second dielectric layer for example is to comprise silicon nitride, silica or silicon oxynitride.
The dot structure that the present invention's preferred embodiment is described, wherein the material of pixel electrode for example is to comprise indium tin oxide.
The present invention proposes a kind of pixel method for repairing and mending, it is suitable for repairing dot structure as mentioned above, and the present invention's pixel method for repairing and mending comprises, at first, to be positioned at around openings and be positioned at drain electrode and cut off, under drain electrode and line stretcher, to form the pattern of floating with the gate pattern of line stretcher both sides.Then, line stretcher is electrically connected with the pattern of floating.At last, drain electrode is electrically connected with the pattern of floating.
The method for repairing and mending that the present invention's preferred embodiment is described, the method that wherein will be positioned at around openings and be positioned at drain electrode and the gate pattern cut-out of line stretcher both sides comprises laser cutting.
The method for repairing and mending that the present invention's preferred embodiment is described, the method that wherein makes the line stretcher and the pattern of floating be electrically connected and make drain electrode to be electrically connected with the pattern of floating comprises laser welding.
The invention provides a kind of thin-film transistor, it comprises gate pattern, first dielectric layer, channel layer, source electrode, drain electrode and second dielectric layer.Wherein, be formed with opening in the gate pattern, and the first dielectric layer cover gate pattern and fill up opening.In addition, channel layer is arranged on first dielectric layer of gate pattern top, and source electrode and drain electrode all are arranged on the channel layer.Above-mentioned drain electrode is positioned at the top of opening.In addition, second dielectric layer covers source electrode and drain electrode.
The thin-film transistor that the present invention's preferred embodiment is described also comprises ohmic contact layer, and it is arranged between channel layer and source electrode and the drain electrode.
The thin-film transistor that the present invention's preferred embodiment is described, wherein the material of channel layer comprises amorphous silicon.
The thin-film transistor that the present invention's preferred embodiment is described, wherein the material of first dielectric layer comprises silicon nitride, silica or silicon oxynitride.
The thin-film transistor that the present invention's preferred embodiment is described, wherein the material of second dielectric layer comprises silicon nitride, silica or silicon oxynitride.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is a known pixel structure partial schematic diagram.
Fig. 2 is corresponding to the generalized section of A-A ' hatching among Fig. 1.
Fig. 3 is the dot structure partial schematic diagram of the present invention's preferred embodiment.
Fig. 4 is corresponding to the generalized section of B-B ' hatching among Fig. 3.
Fig. 5 A～Fig. 5 B repairs schematic flow sheet for the dot structure of preferred embodiment of the present invention.
Fig. 6 is corresponding to the generalized section of C-C ' hatching among Fig. 5 B.
The main element description of symbols
10,30,40,50: the zone
20: opening
110,210: substrate
120,220: dot structure
122,222: thin-film transistor
122a: grid
122b, 222b: channel layer
122c, 222c: source electrode
122d, 222d: drain electrode
124,224: pixel electrode
126,226: scan line
128,228: data wire
222a: gate pattern
222e: ohmic contact layer
222f: first dielectric layer
222g: second dielectric layer
228a: line stretcher
P: the pattern of floating
V, H: contact hole
Embodiment
Fig. 3 is the dot structure partial schematic diagram of the present invention's preferred embodiment, and Fig. 4 is corresponding to the generalized section of B-B ' hatching among Fig. 3.Please be simultaneously with reference to Fig. 3 and Fig. 4, the present invention's dot structure 220 mainly comprises thin-film transistor 222, pixel electrode 224, scan line 226 and data wire 228.
In more detail, as shown in Figure 4, the thin-film transistor 222 that is positioned on the substrate 210 is electrically connected on pixel electrode 224, and thin-film transistor 222 comprises gate pattern 222a, channel layer 222b, source electrode 222c, drain electrode 222d, the first dielectric layer 222f and the second dielectric layer 222g.Wherein, gate pattern 222a can be electrically connected with this scan line 226, and gate pattern 222a has opening 20.Above-mentioned gate pattern 222a is made when forming scan line 226 together, and opening 20 also defines in this manufacturing process simultaneously simultaneously.
In addition, the material of the first dielectric layer 222f is an electrical insulating material, and it for example is silicon nitride, silica or silicon oxynitride, and the first dielectric layer 222f covers scan line 226 and gate pattern 222a and fills up opening 20.The material of above-mentioned channel layer 222b for example is an amorphous silicon, and channel layer 222b is arranged on the first dielectric layer 222f of gate pattern 222a top.In order to reduce the impedance of channel layer 222b, also can between channel layer 222b and source electrode 222c and drain electrode 222d, form ohmic contact layer 222e.
In other words, source electrode 222c and drain electrode 222d are arranged on the ohmic contact layer 222e, and drain electrode 222d is positioned at the top of opening 20, just is positioned on the first dielectric layer 222f of opening 20 tops.At this, the shape of drain electrode 222d for example is a T shape, and overlapping ( zone 30,40 and 50) about gate pattern 222a and the drain electrode 222d can produce the gate-to-drain parasitic capacitance effect.
In addition, above-mentioned drain electrode 222d is because of across opening 20 tops, therefore in the process of making drain electrode 222d, because of the error of photo etched mask contraposition or the vibrations of board, cause the position of the T shape drain electrode 222d of formation, error in a little contraposition is arranged on vertical or horizontal, but the summation of the area of overlapping region 30,40,50 can not change.In other words, the value of gate-to-drain parasitic capacitance still can be kept a fixed value, and then it is stable to keep the pixel feedback voltage, with the image quality of guaranteeing that Thin Film Transistor-LCD is shown.
It should be noted that in present embodiment and the accompanying drawing it is that drain electrode 222d with the opening 20 of rectangle and T shape is that example illustrates, but the shape of the present invention and unrestricted opening 20 and the 222d that drains.That is to say that opening 20 can also be other shape with the shape of drain electrode 222d, for example be that opening can be circle, polygon or the like, and drain electrode can also be rectangle or other shape.
In addition, the material of the second dielectric layer 222g for example is silicon nitride, silica or silicon oxynitride, and the second dielectric layer 222g covers source electrode 222c, drain electrode 222d and data wire 228.The pixel electrode 224 of present embodiment is arranged on the second dielectric layer 222g, and pixel electrode 224 is electrically connected with drain electrode 222d by contact hole V.
If because of factors such as manufacturing process or electrostatic breakdown make the dot structure 220 of Fig. 3 produce defectives, then the method that the dot structure 220 of Fig. 3 is repaired is as described below.Please refer to Fig. 3, at first, will be positioned at around the opening 20 and the gate pattern 222a that is positioned at drain electrode 222d and line stretcher 228a both sides cuts off, make the part of grid pole pattern 222a formation of drain electrode 222d and the line stretcher 228a below pattern P of floating, shown in Fig. 5 A.The method of above-mentioned cut-out gate pattern 222a for example is to cut off in the laser cutting mode.This pattern P of floating is isolated with gate pattern 222a electricity.
Then, line stretcher 228a is electrically connected with the pattern P of floating and the 222d that will drain is electrically connected with the pattern P of floating, shown in Fig. 5 B.The method of above-mentioned electrical connection for example is a laser welding.Thus, data wire 228 just can by line stretcher 228a and float pattern P and with the drain electrode 222d be electrically connected.Please refer to Fig. 6, its be among Fig. 5 B corresponding to the generalized section of C-C ' hatching, line stretcher 228a is electrically connected by the pattern P of floating, and then pixel electrode 224 is electrically connected with data wire 228.
Generally speaking, since the voltage difference of electrode on the subtend substrate and 228 of data wires less than the voltage difference of 226 of the electrode on the subtend substrate and scan lines.Therefore, by laser welding so that pixel electrode 224 comes inpainted pixels with the mode that data wire 228 is electrically connected, can make the voltage difference between pixel electrode 224 and subtend electrode of substrate can be too not high, its be with known by pixel electrode be electrically connected with scan line reach repairing method comparatively speaking.Thus, just can avoid the liquid crystal molecule of this pixel excessively to reverse.Therefore,, after the dot structure 220 that it is had flaw is repaired, can make its shown zone form dim spot, just can reach the purpose of inpainted pixels structure thus if display panels is the pattern of the white picture of normality.
In sum, the present invention's dot structure and method for repairing and mending thereof have following advantage at least:
One, because the thin-film transistor in the dot structure of the present invention, its gate pattern has opening, and drain electrode is positioned on the opening of gate pattern, thereby the gate-to-drain parasitic capacitance is remained unchanged.
Two, utilize the present invention's method for repairing pixel structure, can make defective pixels repair into dim spot.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking the claim person of defining.
Claims (11)
1. dot structure is characterized in that comprising:
Scan line;
Gate pattern, wherein this gate pattern can be electrically connected with this scan line, and is formed with opening in this gate pattern;
First dielectric layer covers this scan line and this gate pattern and fills up this opening;
Channel layer is arranged on this first dielectric layer of this gate pattern top;
Source electrode and drain electrode are arranged on this channel layer, and wherein this drain electrode is positioned at the top of this opening;
Data wire is arranged on this first dielectric layer, and this source electrode is electrically connected with this data wire;
Second dielectric layer covers this source electrode, this drain electrode and this data wire; And
Pixel electrode is arranged on this second dielectric layer, and this pixel electrode can be electrically connected with this drain electrode.
2. the dot structure according to claim 1 is characterized in that also comprising line stretcher, and it is electrically connected with this data wire, and this line stretcher can extend to the top of this gate pattern.
3. the dot structure according to claim 1 is characterized in that also comprising ohmic contact layer, is arranged between this channel layer and this source electrode and this drain electrode.
4. the dot structure according to claim 1 is characterized in that the material of this channel layer comprises amorphous silicon.
5. the dot structure according to claim 1 is characterized in that the material of this first dielectric layer comprises silicon nitride, silica or silicon oxynitride.
6. the dot structure according to claim 1 is characterized in that the material of this second dielectric layer comprises silicon nitride, silica or silicon oxynitride.
7. the dot structure according to claim 1 is characterized in that the material of this pixel electrode comprises indium tin oxide.
8. pixel method for repairing and mending, it is suitable for repairing as the dot structure as described in the claim 2, it is characterized in that this method comprises:
To be positioned at this around openings and be positioned at this drain electrode and this gate pattern cut-out of these line stretcher both sides, under this drain electrode and this line stretcher, to form the pattern of floating;
This line stretcher and this pattern of floating is electrically connected; And
This drain electrode and this pattern of floating is electrically connected.
9. described according to Claim 8 method for repairing and mending is characterized in that and will be positioned at this around openings and be positioned at this drain electrode and the method for this gate pattern cut-out of these line stretcher both sides comprises laser cutting.
10. described according to Claim 8 method for repairing and mending, it is characterized in that making this line stretcher and this float pattern be electrically connected and make this drain electrode and this to float method that pattern is electrically connected comprises laser welding.
11. a thin-film transistor is characterized in that comprising:
Gate pattern wherein is formed with opening in this gate pattern;
First dielectric layer covers this gate pattern and fills up this opening;
Channel layer is arranged on this first dielectric layer of this gate pattern top;
Source electrode and drain electrode are arranged on this channel layer, and wherein this drain electrode is positioned at the top of this opening; And
Second dielectric layer covers this source electrode and this drain electrode.
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| CNB2005101155640A CN100444383C (en) | 2005-11-04 | 2005-11-04 | Thin film transistor, pixel structure, and method for repairing pixel structure |
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Effective date of registration: 20160816 Address after: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee after: Hao Chi intangible asset management Investment Limited Address before: Taiwan, Taipei, China Zhongshan North Road three paragraph twenty-two Patentee before: Chunghwa Picture Tubes Ltd. |
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Effective date of registration: 20161205 Address after: Hubei City, Wuhan Province, East Lake Development Zone, No. 666 high tech Road, biological city C5 Patentee after: Wuhan Hua Xing photoelectricity technology corporation, Ltd. Address before: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee before: Hao Chi intangible asset management Investment Limited |