TWI630445B - Active device substrate - Google Patents

Abstract

An active device substrate includes a plurality of pixel units and a preset pattern. Each of the pixel units includes a scan line extending along the first direction, a data line interleaved with the scan line, a pixel electrode electrically connected to the scan line and the data line, and a common electrode overlapping the pixel electrode. The scan line of at least one pixel unit has a predetermined opening. The preset pattern belongs to the same film layer as the common electrode. The preset pattern is set on a scan line of at least one pixel unit. The preset pattern has a plurality of opposing first sides and a plurality of opposing second sides. The first side and the second side are located within the area of the scan line. The first side is perpendicular to the first direction and the second side is parallel to the first direction.

Description

Active device substrate

The present invention relates to a substrate, and more particularly to an active device substrate.

With the advancement of display technology, the resolution of display panels continues to increase. In general, today's display panels have sufficient high resolution, and consumer attention to display panel specifications is no longer limited. In particular, consumers pay more attention to the smoothness of the display of dynamic images. In general, in order to make the display of the dynamic picture smooth, the frame rate of the display panel can be increased. For example, the screen update rate of the display panel can be increased from a normal 60 Hz to 144 Hz. However, when driven by a high frequency (for example, 144 Hz), if the RC load of the display panel is too high, display failure is likely to occur. In view of this, the design of the scan line of the display panel can be changed to reduce the resistance and capacitance load. However, when the design of the scan line is changed, the edge of the film layer to which the scan line belongs is too close to the edge of the film layer to which the transparent electrode belongs, and the measurement system is easy to be mistaken. Taking the wrong edge image, it is difficult to judge the alignment of the film layer to which the scan line belongs and the film layer to which the transparent electrode belongs.

The invention provides an active device substrate, which is easy to measure the alignment of the film layer to which the scanning line belongs and the film layer to which the common electrode belongs.

The active device substrate of the present invention includes a plurality of pixel units and a preset pattern. Each of the pixel units includes a scan line extending along the first direction, a data line interleaved with the scan line, a pixel electrode electrically connected to the scan line and the data line, and a common electrode overlapping the pixel electrode. The scan line of at least one pixel unit has a predetermined opening. The preset pattern belongs to the same film layer as the common electrode. The preset pattern is set on a scan line of at least one pixel unit. The preset pattern has a plurality of opposing first sides and a plurality of opposing second sides. The first side and the second side are located within the area of the scan line. The first side is perpendicular to the first direction and the second side is parallel to the first direction.

In an embodiment of the invention, the preset pattern includes a first portion and a second portion. The first portion has a plurality of first sides and is perpendicular to the scan line. The second portion has a plurality of second sides and is parallel to the scan line.

In an embodiment of the invention, the first portion is electrically connected between two common electrodes of two adjacent pixel units.

In an embodiment of the invention, the first portion is coupled to the second portion.

In an embodiment of the invention, the first portion is separated from the second portion.

In an embodiment of the invention, the vertical projection of the predetermined opening is outside the vertical projected area of the preset pattern.

In an embodiment of the invention, the vertical projection of the predetermined opening is between a vertical projection of the thin film transistor of the at least one pixel unit and a vertical projection of the predetermined pattern.

In an embodiment of the invention, the vertical projection of the predetermined opening overlaps with the vertical projection of the preset pattern.

In an embodiment of the invention, the vertical projection of the preset opening is located within a vertical projection area of the preset pattern.

In an embodiment of the invention, the predetermined opening is a closed opening.

In an embodiment of the invention, the closed opening has a plurality of opposing third sides and an opposite plurality of fourth sides, the third side is perpendicular to the first direction, and the fourth side is first The directions are parallel.

In an embodiment of the invention, the predetermined opening is an open opening.

In an embodiment of the invention, the open opening has a plurality of opposite fifth sides and a sixth side edge connected between the fifth sides, the fifth side is perpendicular to the first direction, and the sixth side The sides are parallel to the first direction.

In an embodiment of the invention, the shortest distance between the vertical projection of the predetermined opening and the vertical projection of the preset pattern is L, and 3 μm ≦L ≦ 30 μm.

In an embodiment of the invention, the line widths of the remaining portions of the scan lines that do not have the predetermined openings are uniform.

In an embodiment of the invention, the thin film transistor includes a gate, a semiconductor layer, and a source and a drain electrically connected to the semiconductor layer, and the semiconductor layer, the source and the drain are located above the scan line.

In an embodiment of the invention, the gate is a portion of the scan line.

Based on the above, the alignment pattern of the film layer to which the common electrode belongs and the film layer to which the scan line belongs can be judged by using the predetermined pattern belonging to the same film layer as the common electrode and the predetermined opening of the scanning line. Since the first side edge and the second side edge of the preset pattern are all located within the area of the scan line, the image capturing unit of the measurement system can easily obtain the first side edge and the second side edge, and the edges of other patterns are not easily misjudged. . Thereby, the active device substrate not only has an appropriate capacitive resistance load, but the alignment of the film layer to which the scanning line belongs and the film layer to which the common electrode belongs is easily detected.

The above described features and advantages of the invention will be apparent from the following description.

1 is a top plan view of an active device substrate in accordance with an embodiment of the present invention. FIG. 2 is an enlarged schematic view showing a portion R of the active device substrate 100 of FIG. 1. Referring to FIGS. 1 and 2 , the active device substrate 100 includes a plurality of pixel units 110 and a preset pattern 120 . The plurality of pixel units 110 and the preset pattern 120 are disposed on a substrate (not shown). The substrate is mainly a member for carrying the active device substrate 100. In this embodiment, the material of the substrate may be glass, quartz, organic polymer, or an opaque/reflective material (for example, wafer, ceramic, or other applicable materials), or other applicable materials. .

Each of the pixel units 110 includes a scan line SL, a data line DL, a thin film transistor T, a pixel electrode 112, and a common electrode 114. The scan line SL and the data line DL are disposed on the substrate. The scan line SL and the data line DL are alternately arranged with each other. The scan line SL extends along the first direction x, and the data line DL extends along the second direction y, the first direction x being non-parallel to the second direction y. For example, in the embodiment, the first direction x and the second direction y may be perpendicular, but the invention is not limited thereto. In addition, the scan line SL and the data line DL belong to different film layers. Based on the conductivity considerations, the scan line SL and the data line DL are generally made of a metal material, but the present invention is not limited thereto. In other embodiments, the scan line SL and the data line DL may also use other conductive materials, such as an alloy, A nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or a stacked layer of a metal material and other conductive materials.

The scan line SL has a preset opening 116. In the present embodiment, in the vertical projection direction z, the predetermined opening 116 is located outside the area of the active element T without overlapping with the active element T. In the present embodiment, the predetermined opening 116 has opposite side edges 116a (shown in FIG. 2) perpendicular to the first direction x and one side 116b (shown in FIG. 2) connected between the opposite side edges 116a. Where side edge 116b is parallel to first direction x. One end of the side 116a of the predetermined opening 116 is connected to the side 116b, and the other end of the side 116a of the predetermined opening 116 is directly connectable to the edge 116c of the scanning line SL. In other words, in the embodiment, the preset opening 116 may be a gap of the scan line SL, but the invention is not limited thereto. In this embodiment, the predetermined opening 116 may be a rectangular notch. However, the invention is not limited thereto, and in other embodiments, the predetermined opening 116 may also be a gap of other suitable shape.

In the present embodiment, in the vertical projection direction z, the vertical projection of the preset opening 116 may be outside the vertical projection area of the preset pattern 120, wherein the vertical projection direction z is perpendicular to the first direction x and the second direction y. For example, in this embodiment, the vertical projection of the preset opening 116 may be between the vertical projection of the thin film transistor T and the vertical projection of the preset pattern 120, but the invention is not limited thereto. In addition, in the embodiment, in order to reduce the RC loading of the active device substrate 100 to be suitable for driving at a high frame rate, the remaining portion of the scan line SL having no preset opening 116 may be Has a consistent line width W.

The thin film transistor T is electrically connected to the scan line SL and the data line DL. In detail, the thin film transistor T includes a gate G (shown in FIG. 2), a semiconductor layer CH (shown in FIG. 2), and a source S and a drain D electrically connected to different regions of the semiconductor layer CH, respectively. The scan line SL is electrically connected to the gate G of the thin film transistor T. For example, in the present embodiment, the gate G may be a part of the scan line SL. Further, the gate G may be a part of the remaining portion of the scan line SL having a uniform line width W. The data line DL is electrically connected to the source S of the thin film transistor T. For example, in the embodiment, the data line DL has a trunk portion parallel to the second direction y, and the source S may be a branch pattern extending outward from the main portion of the data line DL and overlapping the semiconductor layer CH. .

For example, in the present embodiment, the gate G may be positioned below the semiconductor layer CH, and the thin film transistor T may be a bottom gate thin film transistor. The semiconductor layer CH, the source S and the drain D may be located above the scan line SL. In addition, in this embodiment, the gate G and the scan line SL may belong to a first conductive layer, and the data line DL, the source S and the drain D may belong to a second conductive layer, but the present invention does not Limited.

The pixel electrode 112 is electrically connected to the thin film transistor T. In detail, the pixel electrode 112 is electrically connected to the drain D of the thin film transistor T. For example, in the embodiment, the pixel unit 110 further includes a conductive element 118 extending from the drain D to the area of the scan line SL, and the lower edge of the pixel electrode 112 directly covers the conductive element 118 and the conductive element. 118, the pixel electrode 112 can be electrically connected to the drain D through the conductive element 118, but the invention is not limited thereto. In other embodiments, the pixel electrode 112 can also be used in other manners. The thin film transistor T is electrically connected. In this embodiment, the pixel electrode 112 may be a transparent conductive layer including a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, Or other suitable oxide, or a stacked layer of at least two of the above, but the invention is not limited thereto.

The common electrode 114 overlaps the pixel electrode 112. In the present embodiment, the active device substrate 100 may include a common electrode line CL. The plurality of common electrodes 114 of the plurality of pixel units 110 can be grounded through the common electrode line CL. However, the present invention is not limited thereto. In other embodiments, the common electrode 114 can also be electrically connected to a fixed potential or adjustable (adjustable). ) potential. In this embodiment, the common electrode 114 and the pixel electrode 112 are disposed on the same substrate, and one of the common electrode 114 and the pixel electrode 112 (for example, the common electrode 114) has a plurality of openings 114a, and the edge of the opening 114a is The other of the common electrode 114 and the pixel electrode 112 (for example, the pixel electrode 112) is used to drive a display medium (for example, liquid crystal). In other words, in the present embodiment, the display panel (not shown) including the active device substrate 100 is, for example, a display panel of a Fringe-Field Switching (FFS) mode. However, the present invention is not limited thereto. In other embodiments, the display panel including the active device substrate 100 may also be a display panel of an In-Plane Switching (IPS) mode or other suitable mode. In this embodiment, the common electrode 114 may be a transparent conductive layer including a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or Other suitable oxides or stacked layers of at least two of the above, but the invention is not limited thereto.

The preset pattern 120 and the common electrode 114 belong to the same film layer. The preset pattern 120 is disposed on the scan line SL of the pixel unit 110. For example, in the embodiment, the preset pattern 120 includes a first portion 122 and a second portion 124. The first portion 122 has a plurality of opposite sides 122a (shown in FIG. 2) and is perpendicular to the scan line SL. The second portion 124 has a plurality of opposing sides 124a and is parallel to the scan line SL. In the vertical projection direction z, the side 122a of the first portion 122 and the side 124a of the second portion 124 may both be located within the area of the scan line SL. In short, in the present embodiment, the first portion 122 may be a rectangular pattern spanning the scan line SL, and the second portion 124 may be a rectangle connected to the first portion 122 and extending from the first portion 122 toward the thin film transistor T. pattern. However, the present invention is not limited thereto. In other embodiments, the first portion 122 and the second portion 124 may also be patterns of other shapes; in addition, the first portion 122 and the second portion 124 are not necessarily connected, One portion 122 and the second portion 124 can also be separated from each other, as will be exemplified in the following paragraphs in conjunction with other figures.

Referring to FIG. 1, the pixel unit 110-1 is adjacent to the pixel unit 110-2. In this embodiment, the preset pattern 120 may extend outward from the common electrode 114 of the pixel unit 110-1 and across the scan line SL of the pixel unit 110-1 to be electrically connected to the common unit of the pixel unit 110-1. The electrode 114-1 is between the electrode 114-1 and the common electrode 114-2 of the pixel unit 110-2. In other words, in this embodiment, a bridge portion electrically connected between the common electrodes 114 of the adjacent two pixel units 110-1, 110-2 can be used as the preset pattern 120. However, the present invention is not limited thereto. In other embodiments, the preset pattern 120 may also belong to the same film layer as the common electrode 114, but is not electrically connected to the common electrode 114.

The alignment pattern 120 and the predetermined opening 116 of the scan line SL can be used to determine the alignment of the film layer to which the common electrode 114 belongs and the film layer to which the scan line SL belongs. It is worth mentioning that, since the preset pattern 120 and the preset opening 116 are both disposed in the display area, the preset pattern (not shown) for measuring the alignment condition is used in comparison with the preset area (not shown). The preset pattern 120 and the preset opening 116 can more accurately measure and determine the alignment of the film layer to which the common electrode 114 belongs and the film layer to which the scan line SL belongs in the display region. For example, in the embodiment, the image capturing unit (for example, a camera) of the measurement system can capture images of the opposite sides 122a of the preset pattern 120, and the processing unit (eg, a computer) of the measurement system can be The first central coordinate of the two sides 122a in the first direction x can be calculated according to the image of the opposite side edges 122a; similarly, the processing unit can calculate the two sides according to the images of the opposite side edges 124a of the preset pattern 120. a second central coordinate of the side 124a in the second direction y; the processing unit may calculate a third central coordinate of the two sides 116a in the first direction x according to the image of the opposite sides 116a of the preset opening 116; The fourth central coordinate of the side 116a and the edge 116c in the second direction y can be calculated from the image of the side 116b of the predetermined opening 116 and the edge 116c of the scanning line SL. By comparing the first central coordinate with the third central coordinate and comparing the second central coordinate with the fourth central coordinate, the alignment of the film layer to which the common electrode 114 belongs and the film layer to which the scanning line SL belongs can be determined in the display region.

It is worth mentioning that both sides 122a of the preset pattern 120 for measuring the alignment in the first direction x and two sides of the preset pattern 120 for measuring the alignment in the second direction y are The sides 124a are all located in the area of the scanning line SL. Therefore, the image capturing unit of the measuring system can easily obtain the images of the side edges 122a and the side edges 124a, and it is not easy to misjudge the edges of other patterns and cause misjudgment. In addition, since the preset pattern 120 is located above the scan line SL, the preset opening 116 is an opening of the scan line SL, so the arrangement of the preset pattern 120 and the preset opening 116 does not limit the layout of the pixel unit 110, There is no adverse effect on the aperture ratio of the active device substrate 100. In the vertical projection of the vertical projection direction z of the present embodiment, the shortest distance between the edge 116a of the predetermined opening 116 and the edge 122a of the preset pattern 120 is L (indicated in FIG. 2), 3 μm ≦L ≦ 30 μm; preferably Yes, 5 μm ≦ L ≦ 10 μm, but the invention is not limited thereto.

FIG. 3 is an enlarged schematic view showing a portion R1 of the active device substrate 100-1 according to another embodiment of the present invention. The active device substrate 100-1 of the present embodiment is similar to the active device substrate 100 described above, and thus the same or similar elements are designated by the same or similar reference numerals. Only the difference between the active device substrate 100-1 and the active device substrate 100 will be described here, and the undescribed portions should be referred to the above description. Referring to FIG. 3, in the embodiment, the predetermined opening 116-1 of the scan line SL of the active device substrate 100-1 may be a closed opening. The predetermined opening 116-1 has opposite side edges 116a perpendicular to the first direction x and opposite side edges 116b parallel to the first direction x. For example, in the embodiment, the preset opening 116-1 may be a square. However, the present invention is not limited thereto, and in other embodiments, the predetermined opening 116-1 may have other shapes: for example, a rectangle, a hexagon, an octagon, or other suitable shape. In addition, in the embodiment, the preset opening 116-1 and the second portion 124 of the preset pattern 120 are selectively aligned in the first direction x, but the invention is not limited thereto.

Similarly, the image capturing unit of the measuring system can capture the images of the opposite sides 122a of the preset pattern 120. The processing unit of the measuring system can calculate the two sides 122a according to the images of the opposite sides 122a. a first central coordinate in a direction x; the processing unit may calculate a second central coordinate of the two sides 124a in the second direction y according to the image of the opposite side edges 124a of the preset pattern 120; the processing unit may be preset according to the preset The image of the opposite side edges 116a of the opening 116-1 calculates the third central coordinate of the two sides 116a in the first direction x; the processing unit can calculate according to the image of the opposite side edges 116b of the preset opening 116-1 The fourth central coordinate of the side edges 116b in the second direction y. By comparing the first central coordinate with the third central coordinate and comparing the second central coordinate with the fourth central coordinate, the alignment of the film layer to which the common electrode 114 belongs and the film layer to which the scanning line SL belongs can be determined in the display region. The active device substrate 100-1 has similar functions and advantages as the aforementioned active device substrate 100, and will not be repeated here.

FIG. 4 is an enlarged schematic view showing a portion R2 of the active device substrate 100-2 according to still another embodiment of the present invention. The active device substrate 100-2 of the present embodiment is similar to the aforementioned active device substrate 100-1, and therefore the same or similar elements are designated by the same or similar reference numerals. Only the difference between the active device substrate 100-2 and the active device substrate 100-1 will be described here, and the undescribed portions should be referred to the above description. Referring to FIG. 4, in the embodiment, in the vertical projection direction z, the vertical projection of the preset opening 116-2 and the vertical projection of the preset pattern 120 may overlap. More specifically, the vertical projection of the predetermined opening 116-2 may be within the vertical projected area of the first portion 122 of the preset pattern 120. The active device substrate 100-2 has similar functions and advantages as the aforementioned active device substrate 100, and will not be repeated here.

FIG. 5 is an enlarged schematic view showing a portion R3 of the active device substrate 100-3 according to still another embodiment of the present invention. The active device substrate 100-3 of the present embodiment is similar to the aforementioned active device substrate 100-1, and therefore the same or similar elements are designated by the same or similar reference numerals. Only the difference between the active device substrate 100-3 and the active device substrate 100-1 will be described here, and the undescribed portions should be referred to the above description. Referring to FIG. 5, in the embodiment, the predetermined opening 116-3 may be selectively rectangular. The active device substrate 100-3 has similar functions and advantages as the active device substrate 100 described above, and will not be repeated here.

FIG. 6 is an enlarged schematic view showing a portion R4 of the active device substrate 100-4 according to an embodiment of the present invention. The active device substrate 100-4 of the present embodiment is similar to the aforementioned active device substrate 100-3, and therefore the same or similar elements are designated by the same or similar reference numerals. Only the difference between the active device substrate 100-4 and the active device substrate 100-3 will be described here, and the undescribed portions should be referred to the above description. Referring to FIG. 6 , in the first embodiment, the preset opening 116 - 4 may not be aligned with the second portion 124 of the preset pattern 120 . The vertical projection of the predetermined opening 116-4 can be between the vertical projection of the first portion 122 and the vertical projection of the thin film transistor T. The active device substrate 100-4 has similar functions and advantages as the active device substrate 100 described above, and will not be repeated here.

FIG. 7 is an enlarged schematic view showing a portion R5 of the active device substrate 100-5 according to another embodiment of the present invention. The active device substrate 100-5 of the present embodiment is similar to the aforementioned active device substrate 100-2, and therefore the same or similar elements are designated by the same or similar reference numerals. Only the differences between the active device substrate 100-5 and the active device substrate 100-2 will be described here, and the portions that are not described will be referred to the above description. Referring to FIG. 7, in the embodiment, in the vertical projection direction z, the vertical projection of the preset opening 116-5 and the vertical projection of the preset pattern 120 may overlap. Furthermore, the vertical projection of the preset opening 116-5 may be located within the vertical projected area of the preset pattern 120. The active device substrate 100-5 has similar functions and advantages as the active device substrate 100 described above, and will not be repeated here.

FIG. 8 is an enlarged schematic view showing a portion R6 of the active device substrate 100-6 according to still another embodiment of the present invention. The active device substrate 100-6 of the present embodiment is similar to the active device substrate 100 described above, and thus the same or similar elements are designated by the same or similar reference numerals. Only the difference between the active device substrate 100-6 and the active device substrate 100 will be described here, and the undescribed portions should be referred to the above description. Referring to FIG. 8, in the embodiment, the first portion 122 of the preset pattern 120-6 and the second portion 124-6 are separable. The active device substrate 100-6 has similar functions and advantages as the aforementioned active device substrate 100, and will not be repeated here.

In summary, the active device substrate according to an embodiment of the present invention includes a plurality of pixel units and a preset pattern. Each pixel unit includes a scan line extending along a first direction, a data line interlaced with the scan line, a thin film transistor electrically connected to the scan line and the data line, and a pixel electrode electrically connected to the thin film transistor; A common electrode that overlaps the pixel electrode. The scan line of at least one pixel unit has a predetermined opening. The preset pattern and the common electrode belong to the same film layer and are electrically connected. The preset pattern is set on a scan line of at least one pixel unit. The preset pattern has a plurality of opposing first sides and a plurality of opposing second sides. The first side and the second side are located above the scan line or within the vertical projected area of the scan line, the first side being perpendicular to the first direction and the second side being parallel to the first direction.

The alignment pattern and the preset opening can be used to determine the alignment of the film layer to which the common electrode belongs and the film layer to which the scan line belongs. Since the first side and the second side of the preset pattern are all located in the projected area of the scan line, the image capturing unit of the measurement system can easily obtain the first side and the second side, and is not easy to misuse other patterns. Edge, causing misjudgment. In addition, since the preset pattern is located on the scan line, the preset opening is an opening of the scan line, so the setting of the preset pattern and the preset opening does not limit the layout of the pixel unit, nor does it cause a defect in the aperture ratio of the active device substrate. influences.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100, 100-1 ~ 100-6‧‧‧ active element substrate
110, 110-1, 110-2‧‧‧ pixel units
112‧‧‧ pixel electrodes
114, 114-1, 114-2‧‧‧share electrode
114a‧‧‧ openings
116, 116-1 ~ 116-5‧‧‧ Preset openings
116a, 116b, 122a, 124a‧‧‧ side
116c‧‧‧ edge
118‧‧‧Conductive components
120, 120-6‧‧‧Preset pattern
122‧‧‧ first
124, 124-6‧‧‧ second
CH‧‧‧Semiconductor layer
CL‧‧‧Common electrode line
D‧‧‧汲
DL‧‧‧ data line
G‧‧‧ gate
L‧‧‧ distance
R, R1 ~ R6‧‧‧ local
SL‧‧‧ scan line
S‧‧‧ source
T‧‧‧film transistor
W‧‧‧Line width
x, y, z‧‧ direction

1 is a top plan view of an active device substrate in accordance with an embodiment of the present invention. FIG. 2 is an enlarged schematic view showing a portion R of the active device substrate 100 of FIG. 1. FIG. 3 is an enlarged schematic view showing a portion R1 of the active device substrate 100-1 according to another embodiment of the present invention. FIG. 4 is an enlarged schematic view showing a portion R2 of the active device substrate 100-2 according to still another embodiment of the present invention. FIG. 5 is an enlarged schematic view showing a portion R3 of the active device substrate 100-3 according to still another embodiment of the present invention. FIG. 6 is an enlarged schematic view showing a portion R4 of the active device substrate 100-4 according to an embodiment of the present invention. FIG. 7 is an enlarged schematic view showing a portion R5 of the active device substrate 100-5 according to another embodiment of the present invention. FIG. 8 is an enlarged schematic view showing a portion R6 of the active device substrate 100-6 according to still another embodiment of the present invention.

Claims (17)

An active device substrate, comprising: a plurality of pixel units, wherein each pixel unit comprises: a scan line extending along a first direction; a data line interlaced with the scan line; a thin film transistor; The scan line and the data line are electrically connected; a pixel electrode is electrically connected to the thin film transistor; and a common electrode is overlapped with the pixel electrode, wherein a scan line of at least one pixel unit has a preset And a predetermined pattern that belongs to the same film layer as the common electrode, wherein the predetermined pattern is disposed on the scan line of the at least one pixel unit, the preset pattern has a plurality of first side edges and a relative a plurality of second sides; in a vertical projection direction, the first sides are located in an area of the scan line and perpendicular to the first direction, and the second sides are located within an area of the scan line Parallel to the first direction. The active device substrate of claim 1, wherein the predetermined pattern comprises: a first portion having the first side edges and perpendicular to the scan line; and a second portion having the first portion The two sides are parallel to the scan line. The active device substrate according to claim 2, wherein the first portion is electrically connected between two common electrodes of two adjacent pixel units. The active device substrate according to claim 2, wherein the first portion is connected to the second portion. The active device substrate of claim 2, wherein the first portion is separated from the second portion. The active device substrate of claim 1, wherein the vertical projection of the predetermined opening is outside the vertical projected area of the predetermined pattern in the vertical projection direction. The active device substrate of claim 6, wherein the vertical projection of the predetermined opening is between a vertical projection of a thin film transistor of one of the at least one pixel units and a vertical projection of the predetermined pattern. The active device substrate of claim 1, wherein a vertical projection of the predetermined opening overlaps with a vertical projection of the predetermined pattern in the vertical projection direction. The active device substrate of claim 8, wherein the vertical projection of the predetermined opening is located within a vertical projected area of the predetermined pattern. The active device substrate according to claim 1, wherein the predetermined opening is a closed opening. The active device substrate according to claim 10, wherein the closed opening has a plurality of opposite third sides and an opposite plurality of fourth sides, the third sides being perpendicular to the first direction, The fourth sides are parallel to the first direction. The active device substrate according to claim 1, wherein the predetermined opening is an open opening. The active device substrate according to claim 12, wherein the open opening has a plurality of opposite fifth sides and a sixth side connected between the fifth sides, the fifth sides The side is perpendicular to the first direction, and the sixth side is parallel to the first direction. The active device substrate according to claim 6, wherein a shortest distance between the vertical projection of the predetermined opening and the vertical projection of the predetermined pattern is L, 3 μm ≦ L ≦ 30 μm. The active device substrate according to claim 1, wherein a line width of the scan line that does not have the rest of the predetermined opening is uniform. The active device substrate according to claim 1, wherein the thin film transistor comprises a gate, a semiconductor layer, and a source and a drain electrically connected to the semiconductor layer, and the semiconductor layer The source and the drain are located above the scan line. The active device substrate of claim 1, wherein the gate is a part of the scan line.