CN1913741A - Control method of plasma treatment device and plasma treatment device - Google Patents
Control method of plasma treatment device and plasma treatment device Download PDFInfo
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- CN1913741A CN1913741A CNA2006100922457A CN200610092245A CN1913741A CN 1913741 A CN1913741 A CN 1913741A CN A2006100922457 A CNA2006100922457 A CN A2006100922457A CN 200610092245 A CN200610092245 A CN 200610092245A CN 1913741 A CN1913741 A CN 1913741A
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Abstract
Provided is a control method of an order of supplying gas to generate plasma uniformly. The microwave plasma treatment device 100 propagates a microwave outputted from a microwave generator 28 from the slot of a slot antenna 23 to a plurality of sheets of dielectric parts through a plurality of wave guides 22 to irradiate the microwave into a treatment vessel 10 while penetrating respective dielectric parts. A controller 40 makes the incidence of the power of microwave into the treatment vessel 10 while supplying an Ar gas into the treatment vessel 10. After the plasma ignition of the Ar gas is effected by the power of the microwave, an SiH<SB>4</SB>gas and an NH<SB>3</SB>gas necessitating much more energy than that for obtaining the plasma Ar gas are supplied into the treatment vessel 10. By this operation, a microwave plasma treatment device 100 is capable of generating a good quality SiN film stably by obtaining the plasma of treatment gas by the power of the microwave introduced into the treatment vessel 10.
Description
Technical field
The present invention relates to handled objects such as glass substrate are carried out the control method of the plasma processing apparatus of plasma treatment.The method that particularly relates to the order of controlling supply gas.
Background technology
In the past, people had just developed and had made the processing gaseous plasmaization that supplies in the container handling, handled objects such as glass substrate were carried out the multiple plasma processing apparatus of plasma treatment.Wherein, microwave plasma processing apparatus adopts the power by microwave to make the way of handling gas ionization or disassociation make the processing gaseous plasmaization.In the process of this plasmaization, usually, after the mist with inert gas (or monoatomic molecules gas) and reactant gas (or polyatomic molecule gas) roughly supplies in the container handling simultaneously, apply the power of microwave again.
Summary of the invention
But, when supplying with mist like this, usually because of the not enough uneven situation that plasma generation takes place of electric field energy when the plasma igniting.With respect to this,, also can consider to improve the power of microwave or the irradiation time that prolongs microwave in order when guaranteeing sufficient plasma density, to produce uniform plasma.
But,, then excessively cause the result of the film forming that hinders the high-quality film because of polyatomic molecule gaseous dissociation if improve the power of microwave.For example, in the process that makes the amorphous silicon film film forming, improve if improve the power of microwave, although expectation makes SiH by the microwave that weakens a little
4Gas is dissociated into SiH as presoma (precursor)
3Atomic group, and can not surplus dissociate into SiH
2The disassociation of the sort of degree of atomic group if promote the power of microwave, dissociates into SiH
2Atomic group, the result becomes SiH
2Atomic group makes the film deterioration, is not preferred.
In addition, produce glass substrate because of microwave sustains damage, cost raises such problem.And, also can produce the necessary turnaround time that is used for substrate is carried out plasma treatment to be increased to very important degree, reduce the problem of handling whole efficient significantly.
On the other hand, uneven plasma is to influence that glass substrate caused, for example, in recent years to carry out plasma treatment to the above maximization glass substrate of 730mm * 920mm, compare significantly with the prior art that the past is only carried out plasma treatment to the wafer about 300mm * 300mm and increase.
For example,, as mentioned above, in the glass substrate of about 10 times area, produce plasma unevenly, then be very difficult to produce equally good membranous in whole base plate if roughly supply with mist simultaneously with wafer carrying out film forming when handling.
The present invention finishes in view of such problem, and purpose is to be provided for producing plasma equably and controls the control method and the plasma processing apparatus of plasma processing apparatus of the order of supply gas.
In order to solve above-mentioned problem, according to a viewpoint of the present invention, a kind of control method of plasma processing apparatus is provided, make the processing gaseous plasmaization by the power that incides the microwave in the container handling, handled object is carried out plasma treatment, it is characterized in that: in above-mentioned container handling, supply with first gas on one side, the power of one side incident microwave in above-mentioned container handling, after power by above-mentioned microwave carries out plasma igniting to above-mentioned first gas, in above-mentioned container handling, supply with and be used to carry out second gas of the necessary energy of plasmaization greater than above-mentioned first gas.
In the prior art of the power that roughly in container handling, applies microwave simultaneously after the mist of supply first gas and second gas, as mentioned above, produce plasma sometimes unevenly.This is the cause that has difference in the process of first gaseous plasmaization in the process of second gaseous plasmaization because of energy that is consumed and the energy that consumes.Particularly for second gas, owing to need make it just to dissociate and produce the internal energy of the molecule of chemical reaction etc., so in the process of carrying out plasmaization, need the electric field energy of more microwave.
For example, consider that first gas is monoatomic molecules gas, second gas is the situation of polyatomic molecule gas.In this case, monoatomic molecules gas carries out only needing energy in the process of plasmaization when carrying out ionization.Therefore, in order to make the monoatomic molecules gaseous plasmaization, as long as monoatomic molecules gas comprises the internal energy with the electron binding energy equivalence.
With respect to this, carry out in the process of plasmaization at polyatomic molecule gas, except that the physical phenomenon of ionization and disassociation and vibrational excitation, the chemical reaction that carries out with other gas also needs a lot of energy.Usually, the necessary energy of vibrational excitation and disassociation is less than the necessary energy of ionization, in order to make the polyatomic molecule gaseous plasmaization, polyatomic molecule gas need electron binding energy above (for example, electron binding energy be used to separate total combination in conjunction with energy with value equivalence) internal energy.
But as mentioned above, if the power ascension of microwave, the result can hinder the film forming of high-quality film because of polyatomic molecule gas excessively dissociates.Therefore, if make the mixed gas plasmaization of monoatomic molecules gas and polyatomic molecule gas with the power of the microwave of minimum necessary limit, though aspect plasmaization, do not need to promote plasmaization in the monoatomic molecules gas of big energy, but, in plasmaization in the polyatomic molecule gas of necessary energy greater than monoatomic molecules gas, then, consequently can produce plasma unevenly because of energy shortage can not promote plasmaization.
Under the circumstances, at first, plasma processing apparatus of the present invention is only supplied with first gas to container handling.Thus, in the process of plasma generation until till the plasma igniting of energy that need be maximum, only first gas passes through the electric field energy of microwave rapidly by plasmaization.Then, behind plasma igniting, plasma processing apparatus of the present invention is supplied with and is carried out second gas of the necessary energy of plasmaization greater than first gas.
Under such state, second gas also can be used as the energy that carries out plasmaization with the kinetic energy of the electronics in the container handling except that the electric field energy of the microwave of incident in container handling.Thus, the kinetic energy of electric field energy that second gas can be by microwave and electronics is promptly by plasmaization.Consequently can stably produce uniform plasma.
At this moment, in above-mentioned container handling, apply the timing of the power of above-mentioned microwave, both can be and moment of supplying with above-mentioned first gas simultaneously, also can be after this moment.In addition, also whether the corresponding value of light wavelength that can produce when detecting with gaseous plasma in above-mentioned container handling judges above-mentioned first gas plasma igniting.
During gas ionization, other molecule of the Electron Excitation that produces in this ionization makes it to take place ionization.When these molecule returns original state (ground state), release energy by luminous.So, detect the value corresponding with luminous light wavelength, become in this value and be a certain threshold value when above, be judged to be plasma igniting.In addition, as the value corresponding, for example, can enumerate the voltage that detects by the optical sensor that is arranged in the container handling with light wavelength.
In addition, also can before above-mentioned plasma igniting, the condition to technology control, make that the collision frequency of the electronics that above-mentioned container handling is interior improves, the internal energy of molecule improves.The condition of above-mentioned technology also can be in the power of the power of pressure, temperature, microwave and light at least any one.
For example, if before plasma igniting, improve pressure in the container handling, then can improve the collision frequency of electronics by the pressure after improving.In addition, if the temperature in the high container handling of plasma igniting prerequisite for example, then electronic motion becomes vivaciously, can improve the collision frequency of electronics.
In addition, if for example before plasma igniting, the power of microwave is risen, then electronic motion becomes vivaciously by the electric field energy of the microwave of incident, can improve the collision frequency of electronics.In addition, also can be by the short light of irradiation UV light and ultraviolet equiwavelength before plasma igniting, the energy of the light by irradiation increases the internal energy of molecule, makes to be easy to carry out ionization.
Like this, at least one in the power by controlled pressure, temperature, microwave, the power of light increases energy, promotes the plasmaization of first gas.Consequently can shorten to the time of plasma igniting.As a result, glass substrate is difficult for can also suppressing cost because of microwave sustains damage, and in addition, also can improve the efficient of entire process significantly because shortened the turnaround time.
Above-mentioned plasma processing apparatus also can possess the dielectric that above-mentioned microwave is propagated in above-mentioned container handling by the line of rabbet joint (slot) back, and is provided with or forms the surperficial wave propagation that suppresses microwave.
Specifically, above-mentioned dielectric also can be formed by the polylith dielectric feature.In addition, above-mentioned dielectric feature also can be by the supporting units support of metal.In addition, above-mentioned dielectric also can form at least one in recess or the protuberance on dielectric surface that the surface wave of above-mentioned microwave is propagated.
According to dielectric plasma processing apparatus with such formation, support component that can be by dielectric feature and metal and dielectric surface concavo-convex, the surface wave that suppresses microwave is in dielectric lip-deep propagation.Thus, can prevent the generation of standing wave.Consequently can avoid producing plasma unevenly because of standing wave.
But, according to having the dielectric plasma processing apparatus that forms like this, owing to surface wave is not propagated, so the energy loss that surface wave has.Because being difficult to carry out the part of plasma igniting, the loss of this energy, gas just be easy to generate.But, according to control method of the present invention, only supply with first gas earlier, after making it to carry out plasma igniting, resupply the second big gas of necessary energy that is used to carry out plasmaization.Thus, can control by article on plasma body processing unit, make and stably to supply with uniform plasma.Consequently applying in a flexible way by forming the generation that dielectric feature suppresses standing wave as mentioned above, produce the advantage of this such device of plasma thus equably, simultaneously can also produce plasma equably, can carry out plasma treatment to handled object with high accuracy by above-mentioned gas supply method.
In addition, according to another viewpoint of the present invention, provide a kind of plasma processing apparatus, make the processing gaseous plasmaization by the power that incides the microwave in the container handling, handled object is carried out plasma treatment, it is characterized in that, possess: the microwave generation member that microwave takes place; Supply with first gas supply member of first gas; After the power of the microwave by above-mentioned generation carries out plasma igniting to first gas of above-mentioned supply, supply with and be used to carry out second gas supply member of the necessary energy of plasmaization greater than second gas of above-mentioned first gas.
According to this device, the gas supply that determines according to being used for producing plasma equably order, plasma processing apparatus passes through order supply gas in container handling well, can stably produce uniform plasma.
Have again, according to another viewpoint of the present invention, a kind of recording medium of embodied on computer readable is provided, store by the power that incides the microwave in the container handling and make the processing gaseous plasmaization, handled object carried out the control program that utilizes in the plasma processing apparatus of plasma treatment, this control program makes computer carry out following processing: in above-mentioned container handling, supply with on one side first gas, on one side the processing of the power of the above-mentioned microwave of incident in above-mentioned container handling; After with power above-mentioned first gas being carried out plasma igniting, in above-mentioned container handling, supply with and be used to carry out of the processing of the necessary energy of plasmaization greater than second gas of above-mentioned first gas by above-mentioned microwave.According to this device, by the computer execution list being shown be used for producing plasma equably and the control program of the order of supply gas can stably produce uniform plasma.
As mentioned above, according to the present invention, can be provided for producing plasma equably and control the control method and the plasma processing apparatus of the plasma processing apparatus of supply gas order.
Description of drawings
Fig. 1 is the sectional arrangement drawing of the microwave plasma processing apparatus of first execution mode of the present invention.
Fig. 2 is the key diagram of top plate portion internal face that is used to illustrate the container handling of same execution mode.
Fig. 3 is the key diagram that is used to illustrate the control signal stream that carries out input and output between control device and microwave plasma processing apparatus.
Fig. 4 is that the CPU that is illustrated in control device in the same execution mode carries out the flow chart that gas is supplied with handling procedure.
Fig. 5 is the sequential chart of each parameter of same execution mode.
Fig. 6 is the key diagram of process that is used to illustrate the plasma generation of SWP and CMEP.
Plasma observed result when the observed result of the plasma when Fig. 7 (a) expression mist is supplied with, Fig. 7 (b) expression are supplied with based on the gas of gas supply order.
Fig. 8 is that the CPU of control device in expression second execution mode of the present invention carries out the flow chart that gas is supplied with handling procedure.
Fig. 9 is the sequential chart of each parameter of same execution mode.
The explanation of label
10: container handling
11: pedestal
18: baffle plate
19a: dry pump
19b:APC (automatic pressure adjuster)
19c:TMP (turbomolecular pump)
28: microwave generator
29: gas introduction tube
30: gas ejection ports
31: handle the gas supply source
31a4:Ar gas supply source
31b4:SiH
4The gas supply source
31b8:NH
3The gas supply source
33: the cooling water supply source
40: control device
The source takes place in 41:UV light
42: pressure sensor
43: pressure sensor
44: temperature sensor
45: optical sensor
100: microwave plasma processing apparatus
Embodiment
Below, the preferred implementation that present invention will be described in detail with reference to the accompanying.Wherein, in this specification and accompanying drawing, give same label for those inscapes that have same function formation in fact, the repetitive description thereof will be omitted.
In addition, in this manual, 1mTorr is defined as (10
-3* 101325/760) Pa is defined as (10 to 1sccm
-6/ 60) m
3/ sec).
(first execution mode)
(formation of microwave plasma processing apparatus)
The microwave plasma processing apparatus of first execution mode of the present invention at first, is described with reference to Fig. 1.Fig. 1 is to cut the sectional arrangement drawing of microwave plasma processing apparatus 100 open with the x direction of principal axis face parallel with the z direction of principal axis.Microwave plasma processing apparatus 100 is examples of plasma processing apparatus.In the present embodiment, as the treatment process of carrying out by microwave plasma processing apparatus 100, enumerate with Ar gas, SiH
4Gas and NH
3The technology that gas produces silicon nitride film describes.
Microwave plasma processing apparatus 100 has the framework that is made of container handling 10 and lid 20.What container handling 10 had that top is formed with opening has end rectangular shape and ground connection.Container handling 10 for example is made of the metal of aluminium (Al) etc.
Substantial middle place in the inside of container handling 10 is provided with the pedestal 11 as the mounting table of handled objects such as mounting substrate W.Pedestal 11 is for example formed by aluminium nitride.
Be provided with power supply 11a and heater 11b in the inside of pedestal 11.On power supply 11a, be connected with high frequency electric source 12b across adaptation 12a (for example, capacitor).In addition, on power supply 11a, also be connected with high-voltage DC power supply 13b by coil 13a.Adaptation 12a, high frequency electric source 12b, coil 13a and high-voltage DC power supply 13b are arranged on the outside of container handling 10, high frequency electric source 12b and high-voltage DC power supply 13b ground connection.
On heater 11b, be connected with the AC power 14 of the outside that is arranged on container handling 10, can substrate W be remained on the temperature of regulation by alternating current from AC power 14 outputs.
The bottom surface of container handling 10 is tubular ground and is formed with opening, is being formed with near the periphery of opening, and the end installing of bellows 15 is the outside wall towards container handling 10.The other end at bellows 15 is fixed with lifter plate 16.Thus, the opening portion of the bottom surface of container handling 10 is airtight by bellows 15 and lifter plate 16.
In addition, the cylindrical shell 17 of pedestal 11 supported configurations on lifter plate 16 is with lifter plate 16 and cylindrical shell 17 lifting integratedly.Thus, pedestal 11 can be adjusted to the height corresponding with treatment process.
Around pedestal 11, be provided with the baffle plate 18 that is used for the gas stream in the container handling 10 is controlled at preferred condition.By baffle plate 18, being divided into mounting in the container handling 10 has the process chamber 10u of substrate W and the exhaust chamber 10d that is communicated with the exhaust gear 19 that is arranged on container handling 10 interior bottoms.
In container handling 10,, be provided with dry pump 19a, APC (automatic pressure adjuster: Automatic Pressure Control) 19b and TMP (turbomolecular pump) 19c as exhaust gear 19.Dry pump 19a discharges gas from exhaust outlet 10a, until become in the container handling 10 to till the decompression state of stipulating.
APC19b is provided with the valve of the connection status between control exhaust outlet 10b and the TMP19c.APC19b is according to the variation of the pressure P in the process chamber 10u 1, and the valve that makes APC19b is sliding with the direction of the cross section almost parallel of exhaust outlet 10b, makes connected component between exhaust outlet 10b and the TMP19c become the divergence of expectation.Thus, the TMP19c pair of divergence with the valve of APC19b becomes the gas of the flow of positive example to carry out exhaust, makes atmosphere in the container handling 10 specified vacuum degree that reduces pressure.
Container handling 10 and lid 20 be by the ring of the O between the top peripheral part that is configured in the following peripheral part that covers main body 21 and container handling 10 26, the fixing air-tightness that keeps simultaneously.In addition, below lid main body 21, be formed with waveguide 22a～waveguide 22f.
Internal face shown in Figure 2 of the top plate portion of the container handling 10 relative with substrate W arranged as shown, and waveguide 22a～waveguide 22f is set up in parallel on the y direction of principal axis in parallel with each other.On waveguide 22a and waveguide 22b, overlook and see the branch waveguide 27a that is connected with the V font on its end.Equally, on waveguide 22c and waveguide 22d, waveguide 22e and waveguide 22f, overlook and see branch waveguide 27b, the branch waveguide 27c that is connected with the V font on its end respectively.On each branch waveguide 27, be connected with microwave generator 28.In addition, microwave generator 28 is equivalent to take place the microwave generation member of microwave.
Each waveguide 22 and each branch waveguide 27 are all formed by the rectangular waveguide that is shaped as rectangle perpendicular to separately axial cross section.For example, at TE10 mould (TE ripple: transverseelectric wave; Magnetic field has the ripple of the direct of travel composition of microwave) situation under, become the H face parallel perpendicular to the tube wall of the long side direction in the axial cross section of each waveguide 22 with magnetic field, the tube wall of short side direction becomes the E face parallel with electric field.The long side direction and the short side direction that how to dispose each waveguide change according to mould (electromagnetic field in the waveguide distributes).In addition, the inside of each waveguide 22 and each branch waveguide 27 is by for example aluminium oxide (Al
2O
3), filling such as quartz, fluoride resin.
As shown in Figure 1, slot antenna 23a～slot antenna 23f is separately positioned on the bottom of waveguide 22a～waveguide 22f.In addition, on each slot antenna 23, a plurality of lines of rabbet joint are set to open-work, and for example, as shown in Figure 2, slot antenna 23a is provided with six lines of rabbet joint (line of rabbet joint 23a1～line of rabbet joint 23a6).
Overlook the line of rabbet joint of seeing each slot antenna 23 and form slotted hole, and be arranged so that the long side direction approximate vertical of its long side direction and waveguide 22.In addition, each line of rabbet joint for example is configured to λ g/2 (λ g: wavelength in waveguide) uniformly-spaced.Like this, 36 (=6 * 6) lines of rabbet joint are interspersed on the whole internal face of the top plate portion that is configured in container handling 10 equably.
Below slot antenna 23, be flat 36 dielectric 24 and be configured in each line of rabbet joint roughly foursquare.For example, be respectively arranged with tile dielectric 24a1～dielectric 24a6 in the bottom that is arranged at the line of rabbet joint 23a1～line of rabbet joint 23a6 on the slot antenna 23a.Each dielectric 24 is by for example quartz glass, aluminium nitride (AlN), aluminium oxide (Al
2O
3), sapphire, SiN, pottery etc. form and make and see through microwave.In addition, the tile dielectric is equivalent to dielectric feature.
The support component 25 that supports each dielectric 24 generally perpendicularly intersects every horizontal respectively and perpendicular 7 elongated supporter 25a1～supporter 25a7 and the supporter 25b1～supporter 25b7 of being provided with in predetermined distance ground, forms latticed.Support component 25 is conductors that the metal by aluminium etc. constitutes, across slot antenna shown in Figure 1 23, lid main body 21 and container handling 10 ground connection.
In the inside of each support component 25, connect a plurality of gas introduction tubes 29 shown in Figure 1, the cross section of each supporter 25a and supporter 25b is provided with a plurality of gas ejection ports 30 (with reference to Fig. 2).
Handle gas supply source 31 by valve 31a1, mass flow controller 31a2, valve 31a3, Ar gas supply source 31a4, valve 31b1, mass flow controller 31b2, valve 31b3, SiH
4Gas supply source 31b4, valve 31b5, mass flow controller 31b6, valve 31b7 and NH
3Gas supply source 31b8 constitutes.
Handling gas supply source 31 can be by the switching of each valve of control, optionally the supply body of regulating the flow of vital energy everywhere in container handling 10.In addition, each mass flow controller can will be handled the concentration that gas is adjusted into expectation by controlling the flow of the processing gas of supplying with respectively.In addition, Ar gas supply source 31a4 is equivalent to supply with first gas supply member of first gas (Ar gas).SiH
4Gas supply source 31b4 and NH
3Gas supply source 31b8 is equivalent to supply with the second gas (SiH
4Gas and NH
3Gas) second gas supply member.
The Ar gas of supplying with from Ar gas supply source 31a4 can spray in container handling from gas ejection ports 30 by the gas introduction tube 29 that is connected on the gas flow path 32a.In addition, from SiH
4The SiH that gas supply source 31b4 supplies with
4Gas and from NH
3The NH that gas supply source 31b8 supplies with
3Gas sprays from gas ejection ports 30 by the gas introduction tube 29 that is connected on the gas flow path 32b.
In the outside of microwave plasma processing apparatus 100, dispose cooling water supply source 33.Cooling water supply source 33 is by supplying with cooling waters to 34 circulations of the water route of the interior that is arranged on the inside of covering main body 21 and container handling 10, and the inside of main body 21 and the interior of container handling 10 are covered in cooling.
According to such formation, microwave plasma processing apparatus 100 can make from the microwave of for example 2.45GHz of microwave generator 28 outputs, propagate to slot antenna 23 by a plurality of waveguides 22, propagate to polylith dielectric 24 from a plurality of lines of rabbet joint, see through this dielectric 24 backs radiation in container handling 10.Handle gas (Ar gas, SiH
4Gas, NH
3Gas) electric field energy of the microwave by such radiation carry out plasmaization.Consequently can on substrate W, generate silicon nitride film.
(formation of control device and action)
Secondly, formation and the action to control device describes.As shown in Figure 3, in the outside of microwave plasma processing apparatus 100, except that microwave generator 28, processing gas supply source 31 and cooling water supply source 33, also be provided with control device 40 and UV light and produce source 41.Control device 40 controlled microwave plasma processing apparatus 100.UV light produces the UV light that source 41 is produced to microwave plasma processing apparatus 100 irradiations.In addition, pressure sensor 42 (vacuum gauges of barratron and thermal convection (convectron) etc.), pressure sensor 43 (vacuum gauges of barratron and thermal convection etc.), temperature sensor 44 and optical sensor 45 are installed on microwave plasma processing apparatus 100.
Secondly, the action of control device 40 is described with reference to Fig. 4 and Fig. 5.The gas that the flowcharting control device 40 of Fig. 4 will be carried out for the order of controlling supply gas is supplied with handling procedure (control program).The sequential chart of Fig. 5 represents to control the timing of each parameter.
Secondly, control device 40 import in step 410 according to pressure sensor 42 detected pressure value P 1, is illustrated in the pressure value P 1 of input in the step 415 and the desired pressure value that is predetermined (for example, the difference value between 250mTorr) to APC19b output., after this control signal of input, APC19b is reduced to the pressure that make in the container handling 10 with the divergence of its valve and rises to 250mTorr, to reduce the flow (moment t1 of Fig. 5) that carries out the gas of exhaust from TMP19c.
Secondly, control device 40 is exported control signals to microwave generator 28 in step 420.After this control signal of input, microwave generator 28 becomes power supply to be " ON ", to apply the microwave (moment t2 of Fig. 5) of 2.5kW * 6 (the 6th, the waveguide number).
Secondly, in step 425, whether control device 40 inputs enter step 430 by optical sensor 45 detected voltage F, judge and light a fire at all dielectric feature bottom plasmas.Do not reach under the situation of desired threshold value at detected voltage F, control device 40 advances to step 435, whether judgement overtime, under not overtime situation, turn back to step 425, carry out step 425 repeatedly～processing of step 435, until all carry out till the plasma igniting all at the appointed time dielectric feature bottoms.
After all carrying out plasma igniting in all dielectric feature bottoms, control device 40 is to entering the step 440 that is connected on step 430 back, to handling gas supply source 31 output control signals.After this control signal of input, gas supply source 31 is for example supplied with the SiH of 200sccm in container handling 10
4The NH of gas and 800sccm
3Gas (moment t3 of Fig. 5) consequently produces silicon nitride film.In addition, constantly t0～t3 so long as within 10sec, get final product.But, when the damage of the substrate of considering to produce or turnaround time by microwave then preferably within 5sec.
Then, in step 445, control device 40 is used to stop to handle the control signal that gas supplies with and is used to stop pressure controlled control signal and is used to make the power supply of microwave to become control signal (moment t4 of Fig. 5) for ' OFF ' to each device output respectively, enter step 495, finish the processing of this program.
According to this flow process, because control device 40 will be according to above processing sequence controlled microwave plasma processing apparatus 100, so can stably produce uniform plasma.Here, why control device 40 carries out the control of microwave plasma processing apparatus 100 according to this processing sequence, can stably produce uniform plasma, specifically describes its reason.
Monoatomic molecules gases such as Ar gas carry out ionization by the electric field energy of microwave but do not dissociate.In other words, in the process that makes the monoatomic molecules gaseous plasmaization, only when carrying out ionization, monoatomic molecules gas just consumes the electric field energy of microwave.Thus, supply to the electric field energy that the monoatomic molecules gas in the container handling consumes microwave one by one, simultaneously, ionization one by one consequently can stably produce uniform plasma from the Ar gas of supplying with one by one.
On the other hand, make SiH
4Gas and NH
3In the process of polyatomic molecule gaseous plasmaizations such as gas, except that ionization and the such physical phenomenon of disassociation, and other gas between the chemical phenomenon of chemical reaction in also need many energy.In general, though vibrational excitation and disassociation energy needed are littler than ionization energy needed, but in order to make the polyatomic molecule gaseous plasmaization, polyatomic molecule gas just must comprise (for example, and will be used to cut off binding energy between chemically combined chemical bond be added to value equivalence on the needed electron binding energy of the ionization) internal energy greater than electron binding energy.
But as mentioned above, behind the power ascension of microwave, the result can hinder the film forming of high-quality film because of polyatomic molecule gas excessively dissociates.Therefore, if the mixed gas plasmaization that attempt passes through monoatomic molecules gas and polyatomic molecule gas with the power of necessary minimal microwave, though aspect plasmaization, do not need to promote plasmaization in the monoatomic molecules gas of big energy, but, in the polyatomic molecule gas of energy that need be bigger aspect plasmaization than monoatomic molecules gas, then can produce plasma as a whole unevenly because of energy shortage produces the part of carrying out and not dissociating (ionization).
As known from the above: under the situation that only is monoatomic molecules gas, mix with monoatomic molecules gas and polyatomic molecule gas under the situation that exists and relatively be easy to make gaseous plasmaization, promptly, under the situation that only is monoatomic molecules gas, plasma is easy to diffusion than under mist.
On the other hand, in making the process of gaseous plasmaization, when plasma igniting, need most energy.Therefore, in case make the igniting of monoatomic molecules gaseous plasma, plasma diffusion is used to keep the plasma energy needed and reduces to handling in the container.Therefore,, in container handling, import polyatomic molecule gas again, then can make polyatomic molecule gas plasmaization swimmingly, keep uniform plasmoid if behind plasma igniting.
So the microwave plasma processing apparatus 100 of present embodiment at first, after supplying with Ar gas and the power by microwave and making the igniting of Ar gaseous plasma, resupplies SiH
4Gas and NH
3Gas makes the power that carries out the needed minimal microwave of plasma igniting with Ar gas thus, stably makes the SiH of last importing
4Gas and NH
3Gaseous plasmaization.
Such gas supply method is effective especially to the microwave plasma processing apparatus 100 with above-mentioned polylith dielectric feature.Microwave plasma processing apparatus more shown in Figure 6 (SWP: surface wave plasma (Surface Wave Plasma)) and the microwave plasma processing apparatus 100 of present embodiment (CMEP: near the plasmoid the dielectric cellular microwave excitation plasma (CellularMicrowave Excitation Plasma)) describes its reason.In addition, SWP is an example that does not make it to suppress the microwave plasma processing apparatus of surperficial wave propagation, and CMEP is an example that suppresses the microwave plasma processing apparatus of surperficial wave propagation.In addition, for ease of explanation, being set in the plasma that the dielectric below of SWP produces on the whole is plasma P, is set in each dielectric feature 24a1, the 24b1 that has been fenced up by each crossbeam of CMEP, the plasma that the below of 24c1,24d1 produces is respectively P1, P2, P3, P4.
At first, the plasmoid to SWP describes.When gas is fed into SWP, when the electric field energy of microwave had surpassed a certain threshold value, gas carried out plasma igniting with regard to ionization.Like this, in SWP, plasma is diffused into dielectric entire upper surface by the surface wave of propagating on dielectric lower wall surface, produces uniform plasma P.Consequently in SWP, have in supply under the situation of mist with the situation of only supplying with Ar gas under any situation all roughly the same, under stable status, all can produce plasma P.But in SWP, surface wave is propagated at dielectric lower surface, the interference between this traveling wave and the reflected wave after place, the end of container handling is reflected and produce standing wave.Like this, the amplitude at the standing wave that produces between dielectric and the plasma becomes big because of the interference between this reflected wave and the traveling wave.The difference plasma P of this electric field energy density for this reason, is at the antinode of standing wave and node and produces fluctuation on the electric field energy, owing to will remain uneven state.In addition, because the standing wave of the high part of electric field energy density by such generation moves, cause the plasma P instability, in container handling because pressure relies on the concentrated or mode jump (mode jump) that produces plasma P.
On the other hand, in CMEP,,, after the metal beam (support component) that propagates between each dielectric feature of support, reflect at this crossbeam place so from the line of rabbet joint, send, by the surface wave that electric field energy produces because dielectric forms by the dielectric feature of polylith.The standing wave that is produced by the interference between this reflected wave and the traveling wave is only propagated in the part that is fenced up by crossbeam all the time.Here, the length of the long side direction of dielectric feature is about 188mm, and with respect to this, the wavelength of microwave in a vacuum is 120mm.Therefore, each standing wave that produces below dielectric feature is about 1.5 wavelength., in CMEP, compare with SWP, the degree of the interference between reflected wave and the traveling wave reduces for this reason, in addition, at surface wave at crossbeam place reflex time, because its energy can produce loss, so the amplitude of the standing wave of generation is compared little with SWP.Therefore, under the situation of CMEP, and compare under the situation of SWP, even if produce standing wave, the fluctuation of electric field energy is also few, and plasma can be kept stable status.
But plasma igniting point is present in respectively in CMEP in each dielectric feature that is fenced up by each crossbeam, and the threshold value of ignition point separately is all different.That is, in CMEP,, there are the place of igniting and the place that misfires because the level of threshold value is poor.The level of the threshold value of this ignition point poor is considered to by for example respectively from generations such as the combined amount of the delicate poor and mist of the intensity of the energy of the microwave of the line of rabbet joint incident of each dielectric feature and mixing ratios.Therefore, so-called " plasma igniting " in CMEP is meant the state that plasma has all been lighted a fire on all ignition points.Particularly compare with the situation that only imports Ar gas, have in importing under the situation of mist, as mentioned above, owing to need the internal energy of the cut-out etc. of intermolecular total key in each ionisation of gas, disassociation, vibrational excitation and chemical reaction, the electric field energy of consumption is very big.But, in order to produce the film of high-quality, the power that needs necessary minimal microwave, in weak like this energy, the difference article on plasma body igniting of the level of the threshold value of the ignition point of the each several part of being distinguished by each crossbeam causes delicate influence, the place (plasma P 1, P3) that consequently produces the place that plasma lights a fire (plasma P 2, P4 are when supplying with reference to the mist of Fig. 6) and do not light a fire.
So, if according to above-mentioned ignition order, at first only supply with Ar gas to CMEP, because only the plasmaization of Ar gas just can consume electric field energy, so even if weak electric field energy also can be carried out plasma igniting in all dielectric feature, produce plasma P 1～P4 (when supplying with) with reference to the Ar gas of Fig. 6.As mentioned above, in CMEP,, just can make plasma P 1～P4 keep stable status in case plasma P 1～P4 takes place on the lower surface of each dielectric feature.
According to the feature of the microwave plasma processing apparatus 100 of present embodiment discussed above, the inventor uses control device 40, becomes Ar gas supply → microwave to apply → SiH the sequential control of supply gas
4Gas, SiH
3The order that gas is supplied with is observed the state of the plasma of generation in the microwave plasma processing apparatus 100 at this moment.Fig. 7 represents its experimental result.
(experimental result)
The plasma observed result of method under the situation of microwave plasma processing apparatus 100 supply mists of prior art used in Fig. 7 (a) expression.Fig. 7 (b) expression is according to the plasma observed result of said sequence under the situation of microwave plasma processing apparatus 100 supply gas.
Shown in each table, the inventor to the 4 kinds of pressure (226mT, 400mT, 600mT, 800mT) shown in the file and each situation of the power (4.3kW, 3.4kW, 2.3kW, 1.7kW) of 4 kinds of microwaves shown in walking crosswise carried out at length testing.In 4 grids corresponding with each situation shown in each table, the even/inhomogeneous state of the plasma behind the Ar gas is supplied with in upper left grid (A) expression.Ar gas, SiH are supplied with in upper right (B) expression
4Gas and NH
3During the mist of gas the plasma of (silicon nitride film generation technology) evenly/inhomogeneous state.Ar gas, SiH are supplied with in the grid of lower-left (C) expression
4Gas and H
2Even/inhomogeneous the state of the plasma of (amorphous silicon generation technology) during gas.
According to this figure, roughly all uniform state on long side direction under all conditions at the plasma that produces under the condition of (A).At the plasma that produces under the situation of (B) almost all is uneven state on long side direction under all conditions.In addition, in this case, do not produce technology as yet and estimate for amorphous silicon.
Yet, the said sequence of finding according to the inventor (Ar gas (monoatomic molecules gas) light a fire → is made carry out in the process of Ar gaseous plasmaization pressure regulation → import real gas (polyatomic molecule gas)), during controlled microwave plasma processing apparatus 100 (situation of Fig. 7 (b)), except that the little condition of the power of pressure height, microwave, all is uniform state at the plasma that produces under the condition of (A), (B), (C) on long side direction under roughly all conditions.Consequently the inventor confirms that the control of finding according to the inventor in sequence can stably produce uniform plasma, can be confirmed to be very effective method in the microwave plasma processing apparatus 100 that possesses the polylith dielectric feature.
Like this, new design according to the inventor, carried out the result that effort is night and day specialized design then, the plasma that produces evenly and stably, in recent years, being accompanied by the maximization of display, is useful especially under the situation of the glass substrate that maximizes very much being carried out plasma treatment, and its achievement is compared with prior art big significantly.Receive the inventor of certain achievement like this, found to be used to promote the further improvement of plasma igniting.In the second following execution mode, will describe this improvement point.
(second execution mode)
The control device 40 of second execution mode, make the collision frequency that improves the electronics in the container handling and molecule put aside on the internal energy this point of portion within it in the control process conditions, different on moving with the control device 40 of first execution mode that does not carry out such control.Therefore, the action of the control device 40 of present embodiment is described to being the center with this difference with reference to Fig. 8 and Fig. 9.Wherein, the formation of the microwave plasma processing apparatus 100 by control device 40 control is identical.
(action of control device)
Fig. 8 is the flow chart that the gas of expression present embodiment is supplied with handling procedure (control program).Fig. 9 is the sequential chart of the timing of each parameter of expression control.
If plasma igniting is all carried out in the bottom in all dielectric feature, then control device 40 outputs are used for making in step 805 control signal (moment t2 ' of Fig. 9) of pressure decline, are used for supplying with SiH in moment t3 output in container handling 10
4Gas and NH
3The control signal of gas is used to make the supply of handling gas and the control signal that pressure is controlled and the supply of microwave all stops in moment t4 output, enters step 895, finishes the processing of this program.Preferably in 10sec, t1～moment t2 and t2～moment t2 ' constantly constantly are preferably respectively in 5sec for t1～moment t2 ' constantly.But, if consider the turnaround time, then preferably in 5sec.
Thus, because the pressure in the high container handling of plasma igniting prerequisite so can improve the collision frequency of electronics, promotes the plasma igniting of Ar gas.Owing to shorten time before plasma igniting like this, thus when the irradiation time that can shorten microwave suppresses the damage of glass substrate, also since the shortening turnaround time improved and handled all efficient and can improve productivity.
In addition, in the above description, control device 40 is by multistage ground controlled pressure, the feasible collision frequency that can improve the electronics in the container handling.But control device 40 for example also can be controlled at least one the condition in the technologies such as power of power, light of temperature, microwave.Specifically, control device 40 also can be controlled to be any one the value in the technologies such as power of the power of temperature, microwave, light the value that makes before the plasma igniting value after greater than igniting.
For example, before plasma igniting, rise, make the electronic motion activation to improve the electron collision frequency by making temperature.In fact, also can pass through control signal, control from cooling water supply source 33 to the wall inside of container handling 10 and near the temperature of the cold-producing mediums of waveguide 22 supplies of covering main body to the cooling water supply source 33 of not shown temperature controller transmission control chart 3.Perhaps, also can by alternating current heater 11b be controlled at desired temperatures by sending control signal to AC power 14 from AC power 14 outputs.
In addition, for example also can make the electronic motion upsweep, improve the collision frequency of electronics by the power of rising microwave before plasma igniting.In fact, can make the electronic motion activation by send the control signal that the power that is used to make microwave rises to microwave generator 28.
In addition, for example also can be by improve the internal energy of molecule at short light such as the wavelength of plasma igniting front irradiation UV light and ultraviolet ray etc. (promptly auxiliary) by energy.In fact, can transmit control signal, make to produce the internal energy that source 41 emission UV light improve molecule from UV light by producing source 41 to UV light.
In addition, for the condition that makes each parameter and technology matches, control device 40 also must be behind plasma igniting, and supplies with SiH
4Gas and NH
3Before the gas, make the power of the power of pressure, temperature, microwave or light drop to the value that the condition with technology matches.
As mentioned above, the microwave plasma processing apparatus 100 of present embodiment forms and makes and can propagate on dielectric surface by polylith dielectric feature surface wave.According to the microwave plasma processing apparatus 100 of such formation, owing to suppress surperficial wave propagation, so can suppress to reflect the generation of the standing wave that forms by surface wave.
In addition, the said sequence that matches according to feature with such microwave plasma processing apparatus 100, regularly handle gas according to the sequentially feeding of monoatomic molecules gas, polyatomic molecule gas well, the condition with technology matches, regularly sets well various parameters (power of pressure, temperature, microwave, the power of light etc.) simultaneously.Consequently, can make it stably to produce uniform plasma, what precision was good handles substrate W.
In addition, by the order according to above explanation, be not limited to Ar gas as the first gas gas supplied reactant, for example also can be monoatomic molecules gases such as He gas or Xe gas.In addition, the second gas gas supplied reactant of energy that need be bigger than first gas as being used to carry out plasmaization is not limited to SiH
4Gas and NH
3Gas for example, also can be hydrogen (H
2) wait polyatomic molecule gas.
In addition, at the pressure of moment t1～moment t4, can be the arbitrary value in 60mTorr～1000mTorr scope by control device 40 controls.In addition, why the upper limit of carrying out the controlled pressure value will be set, be because before the moment t3 that supplies with polyatomic molecule gas, beginning plasma treatment, must make pressure drop to the cause of predefined process conditions value.
In addition, the processing gas of in container handling, supplying with from processing gas supply source 31, as long as the flow of Ar gas is 400～3000sccm, SiH
4The flow of gas is 50～500sccm, NH
3The flow of gas is that the scope of 400～2000sccm gets final product.In addition, the power density that is applied to the microwave in the container handling can be 1.0～7.5w/cm
2Scope.And the temperature in the container handling 10 can remain on 50～150 ℃ scope.The size of glass substrate can be more than 730mm * 920mm, for example, be that (chamber internal diameter: 1000mm * 1190mm) is 1100mm * 1300mm (chamber internal diameter: 1470mm * 1590mm) under the situation of G5 substrate size to 730mm * 920mm under the situation of G4.5 substrate size.
In addition, in order to detect the pressure in the container handling, though the preferred pressure sensor 42 that is arranged in the process chamber 10u that uses also can use the pressure sensor 43 that is arranged in the exhaust chamber 10d.
In addition, control device 40 both can be made of hardware, also can be made of software.
In the above-described embodiment, the action of each several part is related each other, replaces as a series of action while can consider association each other.Therefore,, can make the working of an invention mode of plasma processing apparatus, become the execution mode of the method for control plasma processing apparatus by replacing like this.
In addition, the way that adopts the action make each part mentioned above and the processing of each several part to replace can become the execution mode for program.In addition, by with procedure stores in the recording medium of the embodied on computer readable that has program recorded thereon, can become the execution mode that is recorded in the recording medium of the embodied on computer readable in the program for execution mode with program.
Therefore, the execution mode of the control method of control plasma processing apparatus can become carries out computer: make by the power that incides the microwave in the container handling and handle gaseous plasmaization, the program of the plasma processing apparatus of plasmaization is carried out in control to handled object, in above-mentioned container handling, supply with first gas on one side, the processing of the power of the above-mentioned microwave of incident in container handling on one side, with after the power by above-mentioned microwave carries out plasma igniting to above-mentioned first gas, supply is used to carry out the processing of the necessary energy of plasmaization greater than second gas of above-mentioned first gas in above-mentioned container handling again.In this case, the program that computer is carried out both can be stored among the ROM40a of Fig. 3 etc., also can use to be arranged on not shown communication means (external interface) in the control device 40, obtained by not shown network.
Abovely preferred implementation of the present invention is illustrated with reference to accompanying drawing, still, self-evident these embodiment that is not limited to of the present invention.If the professional and technical personnel obviously can expect various modifications or correction example in the category described in the scope of claim, should be understood to these modifications or revise example also belong to technical scope of the present invention certainly.
For example, plasma processing apparatus of the present invention both can be the microwave plasma processing apparatus of dielectric feature with polylith of tile, also can be at least one the microwave plasma processing apparatus that has been formed with on dielectric surface that the surface wave of microwave is propagated in recess or the protuberance.
In addition, the plasma treatment of being carried out by plasma processing apparatus of the present invention is not limited to the CVD processing, can be all plasma treatment of ashing treatment, etching processing etc.
Industrial utilizability
The present invention can be applicable to the order of controlling supply gas for producing plasma equably Plasma processing apparatus control method, plasma processing apparatus control device and Store the recording medium of the embodied on computer readable of the control program of controlling plasma processing apparatus In.
Claims (12)
1. the control method of a plasma processing apparatus makes the processing gaseous plasmaization by the power that incides the microwave in the container handling, and handled object is carried out plasma treatment, it is characterized in that:
In described container handling, supply with on one side first gas, on one side in described container handling the power of incident microwave,
After power by described microwave carries out plasma igniting to described first gas, in described container handling, supply with and be used to carry out second gas of the necessary energy of plasmaization greater than described first gas.
2. the control method of plasma processing apparatus according to claim 1 is characterized in that:
Before plasma igniting, the condition of technology is controlled, make the collision frequency of the electronics that described container handling is interior improve.
3. the control method of plasma processing apparatus according to claim 2 is characterized in that:
The condition of described technology be in the power of the power of pressure, temperature, microwave and light at least each.
4. according to the control method of each described plasma processing apparatus in the claim 1～3, it is characterized in that:
Described plasma processing apparatus possesses makes described microwave by the line of rabbet joint, the dielectric of in described container handling, propagating,
Described dielectric is set up or forms the surperficial wave propagation that suppresses microwave.
5. the control method of plasma processing apparatus according to claim 4 is characterized in that:
Described dielectric is formed by the polylith dielectric feature.
6. the control method of plasma processing apparatus according to claim 5 is characterized in that:
Described dielectric feature is supported by the support component of metal.
7. according to the control method of each described plasma processing apparatus in the claim 4～6, it is characterized in that:
Described dielectric forms at least one in recess or the protuberance on the dielectric surface that the surface wave of described microwave is propagated.
8. according to the control method of each described plasma processing apparatus in the claim 1～7, it is characterized in that:
Described first gas is monoatomic molecules gas.
9. according to the control method of each described plasma processing apparatus in the claim 1～8, it is characterized in that:
Described second gas is polyatomic molecule gas.
10. according to the control method of each described plasma processing apparatus in the claim 1～9, it is characterized in that:
Whether the value of the light wavelength that produces when detecting corresponding to gaseous plasma in described container handling judges described first gas plasma igniting.
11. a plasma processing apparatus makes the processing gaseous plasmaization by the power that incides the microwave in the container handling, and handled object is carried out plasma treatment, it is characterized in that possessing:
The microwave generation member of microwave takes place;
Supply with first gas supply member of first gas;
After the power of the microwave by described generation carries out plasma igniting to first gas of described supply, supply with and be used to carry out second gas supply member of the necessary energy of plasmaization greater than second gas of described first gas.
12. the recording medium of an embodied on computer readable, store by the power that incides the microwave in the container handling and make the processing gaseous plasmaization, handled object is carried out the control program that utilizes in the plasma processing apparatus of plasma treatment, and this control program makes computer carry out following processing:
In described container handling, supply with on one side first gas, on one side the processing of the power of the described microwave of incident in described container handling; With
After power by described microwave carries out plasma igniting to described first gas, in described container handling, supply with and be used to carry out of the processing of the necessary energy of plasmaization greater than second gas of described first gas.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005232475 | 2005-08-10 | ||
| JP2005232475A JP4777717B2 (en) | 2005-08-10 | 2005-08-10 | Film forming method, plasma processing apparatus, and recording medium |
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| CN1913741A true CN1913741A (en) | 2007-02-14 |
| CN100576966C CN100576966C (en) | 2009-12-30 |
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| JP (1) | JP4777717B2 (en) |
| CN (1) | CN100576966C (en) |
| TW (1) | TW200727343A (en) |
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| JPH05144743A (en) * | 1991-11-15 | 1993-06-11 | Sumitomo Metal Ind Ltd | Cleaning method for plasma apparatus |
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| JP2004200307A (en) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | Plasma treatment device |
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- 2005-08-10 JP JP2005232475A patent/JP4777717B2/en active Active
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- 2006-08-09 TW TW095129236A patent/TW200727343A/en unknown
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200727343A (en) | 2007-07-16 |
| CN100576966C (en) | 2009-12-30 |
| JP4777717B2 (en) | 2011-09-21 |
| JP2007048982A (en) | 2007-02-22 |
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