CN1901630A - 影像感测单元及其应用的cmos影像感测装置与阵列 - Google Patents

影像感测单元及其应用的cmos影像感测装置与阵列 Download PDF

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Publication number
CN1901630A
CN1901630A CNA2006101035450A CN200610103545A CN1901630A CN 1901630 A CN1901630 A CN 1901630A CN A2006101035450 A CNA2006101035450 A CN A2006101035450A CN 200610103545 A CN200610103545 A CN 200610103545A CN 1901630 A CN1901630 A CN 1901630A
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CN
China
Prior art keywords
pixel
transistor
pixel region
sensing unit
hexagonal
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Pending
Application number
CNA2006101035450A
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English (en)
Chinese (zh)
Inventor
许慈轩
杨敦年
张志光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of CN1901630A publication Critical patent/CN1901630A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CNA2006101035450A 2005-07-22 2006-07-21 影像感测单元及其应用的cmos影像感测装置与阵列 Pending CN1901630A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70171305P 2005-07-22 2005-07-22
US60/701,713 2005-07-22
US11/213,186 US20070018073A1 (en) 2005-07-22 2005-08-25 CMOS image sensor device with beehive pattern color sensor cell array
US11/213,186 2005-08-25

Publications (1)

Publication Number Publication Date
CN1901630A true CN1901630A (zh) 2007-01-24

Family

ID=37678201

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101035450A Pending CN1901630A (zh) 2005-07-22 2006-07-21 影像感测单元及其应用的cmos影像感测装置与阵列

Country Status (4)

Country Link
US (1) US20070018073A1 (ko)
KR (1) KR100815889B1 (ko)
CN (1) CN1901630A (ko)
TW (1) TW200717784A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103856700A (zh) * 2012-11-29 2014-06-11 佳能株式会社 摄像元件、摄像设备和摄像系统
TWI567958B (zh) * 2013-11-11 2017-01-21 豪威科技股份有限公司 雙像素大小彩色影像感測器及其製造方法
CN107005640A (zh) * 2014-12-04 2017-08-01 汤姆逊许可公司 图像传感器单元和成像装置

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* Cited by examiner, † Cited by third party
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DE202007019236U1 (de) 2007-11-02 2011-11-09 Valentina Anzupowa Farbteiler-Bildwandler-Gruppe mit teildurchlässigen Spiegeln und Mosaikfarbfiltern
US7781716B2 (en) 2008-03-17 2010-08-24 Eastman Kodak Company Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array
US7745773B1 (en) * 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
US8466000B2 (en) 2011-04-14 2013-06-18 United Microelectronics Corp. Backside-illuminated image sensor and fabricating method thereof
US9312292B2 (en) 2011-10-26 2016-04-12 United Microelectronics Corp. Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) 2011-12-01 2012-11-27 United Microelectronics Corp. Method for fabricating semiconductor device
US8815102B2 (en) 2012-03-23 2014-08-26 United Microelectronics Corporation Method for fabricating patterned dichroic film
US9401441B2 (en) 2012-06-14 2016-07-26 United Microelectronics Corporation Back-illuminated image sensor with dishing depression surface
US8779344B2 (en) 2012-07-11 2014-07-15 United Microelectronics Corp. Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
US8828779B2 (en) 2012-11-01 2014-09-09 United Microelectronics Corp. Backside illumination (BSI) CMOS image sensor process
US8779484B2 (en) 2012-11-29 2014-07-15 United Microelectronics Corp. Image sensor and process thereof
US9279923B2 (en) 2013-03-26 2016-03-08 United Microelectronics Corporation Color filter layer and method of fabricating the same
US9537040B2 (en) 2013-05-09 2017-01-03 United Microelectronics Corp. Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
US9129876B2 (en) 2013-05-28 2015-09-08 United Microelectronics Corp. Image sensor and process thereof
JP2015060121A (ja) 2013-09-19 2015-03-30 株式会社東芝 カラーフィルタアレイおよび固体撮像素子
US9054106B2 (en) 2013-11-13 2015-06-09 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9841319B2 (en) 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
KR102242563B1 (ko) 2015-03-11 2021-04-20 삼성전자주식회사 픽셀 패턴 및 이를 포함하는 이미지 센서
US9953574B2 (en) 2015-04-28 2018-04-24 Microsoft Technology Licensing, Llc Sub-pixel compensation
US10593712B2 (en) 2017-08-23 2020-03-17 Semiconductor Components Industries, Llc Image sensors with high dynamic range and infrared imaging toroidal pixels
US10931902B2 (en) 2018-05-08 2021-02-23 Semiconductor Components Industries, Llc Image sensors with non-rectilinear image pixel arrays
KR102171814B1 (ko) * 2018-12-28 2020-10-29 한국광기술원 분할 성형 지원형 광경화 3d 프린터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311337A (en) 1992-09-23 1994-05-10 Honeywell Inc. Color mosaic matrix display having expanded or reduced hexagonal dot pattern
US6252218B1 (en) * 1999-02-02 2001-06-26 Agilent Technologies, Inc Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout
US6750912B1 (en) * 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP4434530B2 (ja) * 2001-09-17 2010-03-17 ソニー株式会社 固体撮像装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103856700A (zh) * 2012-11-29 2014-06-11 佳能株式会社 摄像元件、摄像设备和摄像系统
US9450006B2 (en) 2012-11-29 2016-09-20 Canon Kabushiki Kaisha Image pickup element, image pickup apparatus, and image pickup system
CN103856700B (zh) * 2012-11-29 2017-03-01 佳能株式会社 摄像元件、摄像设备和摄像系统
TWI567958B (zh) * 2013-11-11 2017-01-21 豪威科技股份有限公司 雙像素大小彩色影像感測器及其製造方法
CN107005640A (zh) * 2014-12-04 2017-08-01 汤姆逊许可公司 图像传感器单元和成像装置
CN107005640B (zh) * 2014-12-04 2020-06-26 交互数字Ce专利控股公司 图像传感器单元和成像装置

Also Published As

Publication number Publication date
KR20070012261A (ko) 2007-01-25
KR100815889B1 (ko) 2008-03-21
US20070018073A1 (en) 2007-01-25
TW200717784A (en) 2007-05-01

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