TW200717784A - Image sensor devices and CMOS image sensor devices and arrays using the same - Google Patents

Image sensor devices and CMOS image sensor devices and arrays using the same

Info

Publication number
TW200717784A
TW200717784A TW095126716A TW95126716A TW200717784A TW 200717784 A TW200717784 A TW 200717784A TW 095126716 A TW095126716 A TW 095126716A TW 95126716 A TW95126716 A TW 95126716A TW 200717784 A TW200717784 A TW 200717784A
Authority
TW
Taiwan
Prior art keywords
image sensor
sensor devices
signal
disposed
arrays
Prior art date
Application number
TW095126716A
Other languages
English (en)
Inventor
Tzu-Hsuan Hsu
Dun-Nian Yaung
Chih-Kung Chang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200717784A publication Critical patent/TW200717784A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14641Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW095126716A 2005-07-22 2006-07-21 Image sensor devices and CMOS image sensor devices and arrays using the same TW200717784A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70171305P 2005-07-22 2005-07-22
US11/213,186 US20070018073A1 (en) 2005-07-22 2005-08-25 CMOS image sensor device with beehive pattern color sensor cell array

Publications (1)

Publication Number Publication Date
TW200717784A true TW200717784A (en) 2007-05-01

Family

ID=37678201

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126716A TW200717784A (en) 2005-07-22 2006-07-21 Image sensor devices and CMOS image sensor devices and arrays using the same

Country Status (4)

Country Link
US (1) US20070018073A1 (zh)
KR (1) KR100815889B1 (zh)
CN (1) CN1901630A (zh)
TW (1) TW200717784A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9645290B2 (en) 2013-09-19 2017-05-09 Kabushiki Kaisha Toshiba Color filter array and solid-state image sensor

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DE202007019236U1 (de) 2007-11-02 2011-11-09 Valentina Anzupowa Farbteiler-Bildwandler-Gruppe mit teildurchlässigen Spiegeln und Mosaikfarbfiltern
US7781716B2 (en) 2008-03-17 2010-08-24 Eastman Kodak Company Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array
US7745773B1 (en) * 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
US8466000B2 (en) 2011-04-14 2013-06-18 United Microelectronics Corp. Backside-illuminated image sensor and fabricating method thereof
US9312292B2 (en) 2011-10-26 2016-04-12 United Microelectronics Corp. Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) 2011-12-01 2012-11-27 United Microelectronics Corp. Method for fabricating semiconductor device
US8815102B2 (en) 2012-03-23 2014-08-26 United Microelectronics Corporation Method for fabricating patterned dichroic film
US9401441B2 (en) 2012-06-14 2016-07-26 United Microelectronics Corporation Back-illuminated image sensor with dishing depression surface
US8779344B2 (en) 2012-07-11 2014-07-15 United Microelectronics Corp. Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
US8828779B2 (en) 2012-11-01 2014-09-09 United Microelectronics Corp. Backside illumination (BSI) CMOS image sensor process
US8779484B2 (en) 2012-11-29 2014-07-15 United Microelectronics Corp. Image sensor and process thereof
JP6021613B2 (ja) * 2012-11-29 2016-11-09 キヤノン株式会社 撮像素子、撮像装置、および、撮像システム
US9279923B2 (en) 2013-03-26 2016-03-08 United Microelectronics Corporation Color filter layer and method of fabricating the same
US9537040B2 (en) 2013-05-09 2017-01-03 United Microelectronics Corp. Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
US9129876B2 (en) 2013-05-28 2015-09-08 United Microelectronics Corp. Image sensor and process thereof
US9147704B2 (en) * 2013-11-11 2015-09-29 Omnivision Technologies, Inc. Dual pixel-sized color image sensors and methods for manufacturing the same
US9054106B2 (en) 2013-11-13 2015-06-09 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9841319B2 (en) 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
EP3029931A1 (en) * 2014-12-04 2016-06-08 Thomson Licensing Image sensor unit and imaging apparatus
KR102242563B1 (ko) 2015-03-11 2021-04-20 삼성전자주식회사 픽셀 패턴 및 이를 포함하는 이미지 센서
US9953574B2 (en) 2015-04-28 2018-04-24 Microsoft Technology Licensing, Llc Sub-pixel compensation
US10593712B2 (en) 2017-08-23 2020-03-17 Semiconductor Components Industries, Llc Image sensors with high dynamic range and infrared imaging toroidal pixels
US10931902B2 (en) 2018-05-08 2021-02-23 Semiconductor Components Industries, Llc Image sensors with non-rectilinear image pixel arrays
KR102171814B1 (ko) * 2018-12-28 2020-10-29 한국광기술원 분할 성형 지원형 광경화 3d 프린터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311337A (en) 1992-09-23 1994-05-10 Honeywell Inc. Color mosaic matrix display having expanded or reduced hexagonal dot pattern
US6252218B1 (en) * 1999-02-02 2001-06-26 Agilent Technologies, Inc Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout
US6750912B1 (en) * 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP4434530B2 (ja) * 2001-09-17 2010-03-17 ソニー株式会社 固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9645290B2 (en) 2013-09-19 2017-05-09 Kabushiki Kaisha Toshiba Color filter array and solid-state image sensor

Also Published As

Publication number Publication date
KR20070012261A (ko) 2007-01-25
CN1901630A (zh) 2007-01-24
KR100815889B1 (ko) 2008-03-21
US20070018073A1 (en) 2007-01-25

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