CN1897301A - Bipolar transistor and power amplifier - Google Patents
Bipolar transistor and power amplifier Download PDFInfo
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- CN1897301A CN1897301A CN 200610101566 CN200610101566A CN1897301A CN 1897301 A CN1897301 A CN 1897301A CN 200610101566 CN200610101566 CN 200610101566 CN 200610101566 A CN200610101566 A CN 200610101566A CN 1897301 A CN1897301 A CN 1897301A
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Abstract
A base mesa finger (an emitter ledge layer 15 , a base layer 16 , and a collector layer 17 ) is interposed between two collector fingers (collector electrodes 13 ), and on the base mesa finger, a base finger (a base electrode 12 ) and two emitter fingers (an emitter layer 14 and an emitter electrode 11 ) on both sides of the base finger, are formed. The two emitter fingers are formed symmetric with respect to the base finger as a reference.
Description
Technical field
The present invention relates to a kind of bipolar transistor and power amplifier.More particularly, the present invention relates to a kind of bipolar transistor, and the power amplifier that adopts this bipolar transistor, this bipolar transistor forms the active element on the semiconductor integrated circuit that is used for power amplification in the signal emission part that is used in the mobile radio terminal (mobile phone etc.) that uses radio frequency band.
Background technology
In recent years, the bipolar transistor that employing is made by compound semiconductor is widely used in the signal emission part of the mobile radio terminal of mobile phone for example etc. as the semiconductor integrated circuit that is used for power amplification of active element, and wherein the bipolar transistor made of this compound semiconductor makes it possible to carry out radio frequency operation and positive supply operation.Particularly, heterojunction bipolar transistor (hereinafter referred is HBT) is widely used, and wherein its base layer is a P type GaAs layer, and its become the emitter layer of heterojunction with this base layer be AlGaAs or the InGaP layer with big band gap.The reason that adopts HBT in bipolar transistor is that the hole that can prevent base layer is back in the emitter layer and compound with the electronic carrier of emitter, increase the injection efficiency of electronic carrier from the emitter to the base stage thus, cause transistorized high efficiency manipulation.
HBT has to refer to (finger) structure usually, and wherein one or more bar line style emitters refer to be arranged side by side.For example, open communique No.6-342803 referring to the Japan Patent spy and the Japan Patent spy opens communique No.2002-110904.Figure 10 A and 10B illustrate plane graph and the profile that the exemplary HBT structure that an emitter refers to wherein is set.In the structure of the conventional H BT of Figure 10 A and 10B, emitter refers to (emitter layer 104 and emitter electrode 101) and two base stages being arranged on the both sides that this emitter refers to refer to that (base electrode 102) is plugged on two collector electrodes and refers between (collector electrode 103).Typically, determine the power output of HBT according to the area of emitter.Therefore, have under the situation that an emitter refers at HBT, the length L needs that emitter refers to are very big, so that realize high power output.Yet emitter refers to take semiconductor area.
For fear of this problem, provide a plurality of emitters to refer to so that do not increasing the high-output power of realizing HBT under the situation that emitter refers to length L.Figure 11 A and 11B illustrate plane graph and the profile that the exemplary HBT structure that four emitters refer to wherein is set.In the structure of the conventional H BT of Figure 11 A and 11B, four emitters refer to and are arranged on that five base stages on the both sides that described emitter refers to refer to be plugged between two collector electrodes refer to.Under the situation of the HBT of Figure 11 A,, therefore use length L separately to refer to realize high-output power HBT less than the emitter of the length among the HBT of Figure 10 A because emitter region can refer to take by a plurality of emitters.
The many fingers structure HBT that wherein has a good radiofrequency characteristics is considered as the multi-unit structure that unit cell and a plurality of this HBT unit be connected in parallel with compound its output and is widely used as power amplification HBT structure.Exemplary power with multi-unit structure has been shown in Figure 12 A and 12B has amplified HBT.Figure 12 A shows wherein the exemplary multi-unit structure that has a plurality of HBT unit that an emitter refers to separately is set.Figure 12 B shows wherein the multi-unit structure that has a plurality of HBT unit that four emitters refer to separately is set.In Figure 12 A and 12B, the collector output of HBT unit is connected to public collector conductor 100 jointly, and the emitter of HBT unit is connected to public emitter conductor 110 jointly.Emitter conductor 110 is provided with via hole 120 and via these via hole 120 ground connection.
Yet, under the situation of this multi-unit structure, should note following some.In power amplification HBT, each HBT is owing to high current density produces heat.Yet the HBT unit produces heat unevenly, thus since between each HBT unit uneven heat produce and in the operation of HBT unit, break down.More specifically, have the HBT unit of the temperature that is higher than the environment that on temperature, has high growth, finally cause puncturing because positive feedback (heat dissipation) further produces heat.And when heat is created between each HBT unit when inhomogeneous, the HBT emitter all can not effectively be worked, and causes radiofrequency characteristics to be degenerated.
Therefore, in order to correct the inhomogeneities that heat produces between each HBT unit, adopted a kind of method of between the base stage conductor 140 of the DC bias voltage pipeline 150 that is used for the DC bias voltage is transported to each HBT unit and each HBT unit, inserting external base resistance 130, as clear illustrating among Figure 12 A and the 12B.By inserting this external base resistance 130, can suppress the increase of the base current of HBT, even make the temperature increase also can avoid heat dissipation thus.External base resistance 130 is used for stablizing the operation of HBT unit, and is commonly called the base stage steady resistance.Notice, provide steady resistance, suppressed the increase of collector current equally, make thus and can suppress heat dissipation by emitter for each HBT unit.Yet, recently, consider the narrow range of the value that steady resistance can be got, so the base stage steady resistance uses manyly than the collector electrode steady resistance.
As mentioned above, adopt the conventional power amplification HBT of base stage steady resistance to take measures to resist the inhomogeneities that heat produces between each HBT unit, yet the inhomogeneities that heat produces between each HBT unit is not considered.The inhomogeneities that heat produces between each HBT unit refer to since following each emitter former thereby that cause refer between the inhomogeneities that produces of heat.
Having in the HBT unit that four emitters refer to of Figure 11 A, when all emitters refer to produce the heat of measuring much at one, the emitter of two central authorities refers to be subjected to the influence of the heat that refers to from two outside emitters, thereby the emitter of these two central authorities refers to have higher temperature.Particularly, the heat that the emitter of these two central authorities refers to produces distributed areas and covers the heat generation distributed areas that these two outside emitters refer to, thereby the emitter of these two central authorities refers to have higher temperature (referring to Figure 13).Notice that in order to correct this problem, considering provides sufficient interval between each emitter refers to, fully separate each other so that heat produces distributed areas.Yet, in this case, increased the area of HBT unit, caused emerging problem: chip area increases; Radiofrequency characteristics is degenerated; Or the like.Therefore, it is unactual.
Under the situation of the HBT unit of Figure 11 A, because these five base stages refer to be set at the both sides that four emitters refer to, therefore with regard to base electrode and the contact resistance between the base layer that each base stage refers to, between each refers to heterogeneity may take place.Therefore, on the injection rate of base current, heterogeneity occurs, cause the heterogeneity of each emitter between referring to.
What be present in Figure 10 A like these question marks has in the HBT unit that an emitter refers to refer to two base stages.Particularly, with regard to base electrode and the contact resistance between the base layer that these two base stages refer to, between these two base stages refer to heterogeneity may take place.Especially, in this HBT unit, base stage refers to long, refer to corresponding to emitter, thereby the heterogeneity of contact resistance increases in the longitudinal direction.Because the heterogeneity of the base resistance of both sides, the heterogeneity in the operation of HBT unit increases.For example, flow through electric current that emitter refers in the part that more close right base stage refers to than bigger in the part that more close left base stage refers to.
In addition, in the HBT unit, base stage-collector electrode parasitic capacitance height, and because the Feedback of Power of this parasitic capacitance causes the gain in the radio frequency band application to be degenerated.The radiofrequency characteristics of HBT depends primarily on the parasitic capacitance that occurs between base layer and the collector layer, and the base stage mesa width W1 shown in this parasitic capacitance and Figure 10 B and the 11B is proportional.This is because base stage-collector capacitance and to insert and put the base layer and the area between the collector layer of this collector layer proportional.In order to reduce base stage mesa width W1, need to be reduced to possible degree except the area the required emitter area.Yet, the HBT cellular construction of Figure 11 B has five base stages that are used for four emitters, and the HBT cellular construction of Figure 10 B has two base stages that are used for an emitter, that is, the base stage area always than required emitter area greatly corresponding to the area of a base electrode.Therefore, in conventional H BT cellular construction since the influence that refers to of base stage and to base stage mesa width W1 reduce to exist restriction, cause the degeneration of gain characteristic in the radio frequency band.
On the other hand, in having the power amplification HBT of multi-unit structure, the value of external base resistance 130 is big, shown in Figure 12 A and 12B.Therefore, when power amplification HBT is actual when being integrated on the semiconductor, need guarantee big area for external base resistance, cause big chip area, that is, cost increases.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of bipolar transistor, it has uniform heat generation and has improved the gain characteristic in the radio frequency band in the HBT unit; And a kind of multi-unit structure that adopts is to reduce the power amplifier of chip area.
The present invention relates to a kind of bipolar transistor that is formed on the Semiconductor substrate.In order to achieve this end, bipolar transistor of the present invention comprises that base stage refers to, refers to be provided with symmetrically and refer to that with this base stage two parallel emitters refer to respect to the base stage as the center, and is arranged to insert and put this base stage and refers to that two collector electrodes that refer to these two emitters refer to.Notice that the emitter of even number refers to and can be referred to be provided with symmetrically with respect to the base stage as the center, and is arranged in the vertical refer to parallel with this base stage.
Preferably, two emitters refer to have separately 30 μ m or littler length.And preferably, base stage refers to have 1 μ m or littler electrode width.
When bipolar transistor is when having the heterojunction bipolar transistor of the emitter layer that becomes heterojunction with base layer, base stage refers to have electrode, and this electrode has a kind of structure, wherein the electrode broad gap layer that penetrates emitter layer with the base layer ohmic contact.
In addition, a kind of power amplifier can be provided, it comprises a plurality of bipolar transistors, wherein its base stage connects publicly, its collector electrode is connected to the radiofrequency signal lead-out terminal, and grounded emitter, electric capacity are inserted between the base stage of radio-frequency (RF) signal input end and public connection, and resistance is inserted between the base stage of bias voltage conveying terminal and public connection.
According to the present invention, the even operation in the unit is very good, and can reduce base stage-collector capacitance, obtains excellent radiofrequency characteristics with low cost thus.In addition, because internal base resistance value height, when structure has the power amplifier of multi-unit structure, the power amplifier that can realize having the anti-breakdown characteristics of small size and excellence and not have external base resistance.
From below in conjunction with the accompanying drawing detailed description of the invention, these and other purposes of the present invention, feature, aspect and advantage will become more apparent.
Description of drawings
Figure 1A is the plane graph that illustrates according to the bipolar transistor structure of the embodiment of the invention;
Figure 1B is the profile that illustrates along the bipolar transistor of the line a-a of Figure 1A intercepting;
Fig. 2 is the figure of unit cell Temperature Distribution that the bipolar transistor of Figure 1A is shown;
Fig. 3 illustrates the performance plot that emitter refers to the correlation between length and the anti-breakdown characteristics;
Fig. 4 is the figure that the exemplary configurations of the power amplification HBT with multi-unit structure is shown, and wherein each unit is the bipolar transistor of Figure 1A;
Fig. 5 is the performance plot that the correlation between base electrode width (internal base resistance value) and the anti-breakdown characteristics is shown;
Fig. 6 A is the plane graph that illustrates according to another bipolar transistor of the embodiment of the invention;
Fig. 6 B is the figure that the exemplary configurations of the power amplification HBT with multi-unit structure is shown, and wherein each unit is the bipolar transistor of Fig. 6 A;
Fig. 7 is the figure of manufacturing step of bipolar transistor that is used to illustrate the embodiment of the invention of Figure 1B;
Fig. 8 is the figure that is used to illustrate other steps of the bipolar transistor that manufacturing obtains by the bipolar transistor of revising Figure 1B;
Fig. 9 A is the figure that the exemplary configurations of power amplifier is shown, wherein the bipolar transistor parallel connection of a plurality of embodiment of the invention;
Fig. 9 B is the equivalent circuit diagram that the power amplifier of Fig. 9 A is shown;
Figure 10 A is the plane graph that the structure of conventional bipolar transistor is shown;
Figure 10 B is the profile that illustrates along the bipolar transistor of the line c-c of Figure 10 A intercepting;
Figure 11 A is the plane graph that the structure of another conventional bipolar transistor is shown;
Figure 11 B is the profile that illustrates along the bipolar transistor of the line d-d of Figure 11 A intercepting;
Figure 12 A is the figure that the exemplary configurations of the conventional power amplification HBT with multi-unit structure is shown, and wherein each unit is the bipolar transistor of Figure 10 A;
Figure 12 B is the figure that the exemplary configurations of the conventional power amplification HBT with multi-unit structure is shown, and wherein each unit is the bipolar transistor of Figure 11 A; And
Figure 13 is the figure of unit cell Temperature Distribution that the bipolar transistor of Figure 11 A is shown.
Embodiment
(structure of bipolar transistor)
At first, with the structure of introducing according to the bipolar transistor of the embodiment of the invention.
Figure 1A is the plane graph that illustrates according to the bipolar transistor structure of the embodiment of the invention.Figure 1B is the profile that illustrates along the bipolar transistor of the line a-a of Figure 1A intercepting.In the structure of the bipolar transistor of present embodiment, the base stage table top is referred to (emitter protrudes (ledge) layer 15, base layer 16 and collector layer 17) is inserted in two collector electrodes and refers between (collector electrode 13), and refer to that at this base stage table top base stage of formation refers to that (base electrode 12) and this base stage refer to that two emitters on the both sides refer to (emitter layer 14 and emitter electrode 11).These two emitters refer to be formed on respect to the base stage as benchmark and refer on the position of symmetry.This bipolar transistor is heterojunction bipolar transistor (HBT) typically.
In the structure of the bipolar transistor of present embodiment, refer on the position of symmetry because these two emitters refer to be arranged on respect to base stage, so these two emitters refer to have uniform heat and produce, as shown in Figure 2.Owing to only exist a base stage to refer to, therefore be accompanied by the heterogeneity problem that base stage refers to and can not take place.
Emitter refers to preferably have 30 μ m or littler length L, so that prevent heteropical generation.For example, as shown in Figure 3, consider the power apply with respect to the characteristic of saturated output as the heteropical indicating device of expression, this saturated output is owing to the output loading of HBT is VSWR=10: 1 o'clock heat dissipation punctures a HBT unit.In this case, this value is big more, and the stability of device is high more.Even refer to that length L is 30 μ m or littler when emitter, and the power that applies is 5dB, and HBT is not breakdown yet.
In addition, in the structure of the bipolar transistor of present embodiment, owing to have only a base stage to refer to be arranged between two emitters refer to, the therefore base stage exponential quantity minimum that refers to of every emitter.Therefore, corresponding to required power output, the area that refers to respect to the base stage of emitter area is little, thereby can reduce the area greater than the base layer of emitter area.Therefore, base stage mesa width W1 is narrowed down, thereby can reduce base stage-collector capacitance, make thus and can in radio frequency band, realize high-gain.
Here, if the width of base electrode 12 is set to 1 μ m or littler, the contact area of base electrode 12 and base layer 16 is little, thereby contact resistance is big.Fig. 4 illustrates the exemplary configurations of a kind of power amplification HBT, wherein bipolar transistor of the present invention is thought of as a unit, and a plurality of unit is connected in parallel.Fig. 5 illustrates the characteristic correlation figure of base electrode width, anti-breakdown characteristics and base stage contact resistance, and wherein the emitter of this HBT refers to that length L is 30 μ m.As can be seen from Figure 5, when the base electrode width is 1 μ m or more hour, transistor has the parasitic base resistance up to 20 Ω, and resistance to sparking can be high, thereby no longer need to prevent the base stage steady resistance of heat dissipation.Therefore, when power amplification HBT being constructed with when wherein bipolar transistor being thought of as the structure that a unit and a plurality of unit be connected in parallel, can make the area of this structure reduce amount corresponding to the required external base resistance (base stage steady resistance) 130 of conventional structure (Figure 11 A etc.).
Notice, when a large amount of unit of needs when obtaining the high output characteristic of power amplifier, can make HBT unit with a kind of like this structure, two or more base stage table tops wherein are set, and public base electrode 12 and the collector electrode 13 of using.Fig. 6 A illustrates the exemplary configurations of bipolar transistor.Although it is long that base stage refers to length, a base stage table top partly has the base resistance of about 20 Ω, thereby has suppressed heterogeneity in two base stage table top parts in new unit cell.According to structure of the present invention, linkage unit easily, and can construct new unit.Fig. 6 B illustrates the exemplary configurations of a kind of power amplification HBT, wherein this bipolar transistor is thought of as a unit, and a plurality of unit is connected in parallel.
(making the method for bipolar transistor)
Then, will introduce the method for the bipolar transistor of making the embodiment of the invention.
Fig. 7 is used to illustrate that the steps A of bipolar transistor of the embodiment of the invention of making Figure 1B is to the figure of E.
Emitter part is the layer that comprises n type GaAs emitter layer 14 and n type InGaP emitter protruding layer 15.The layer that contacts with emitter electrode 11 that WSi makes needs ohmic contact.Therefore, the thin layer of InGaAs is arranged on the superiors of emitter.P type GaAs base layer 16 (base stage part) is arranged under the emitter part.N type GaAs collector layer 17 is arranged under the p type GaAs base layer 16.N with high-concentration dopant
+Type GaAs electron collector layer 18 (being called the electron collector layer) is arranged under the n type GaAs collector layer 17.This epitaxial loayer is carried out etching technics to form emitter mesa layer and base stage table top layer, on semiconductor layer, form transistorized three-end electrode thus.In this way, made transistor.
For HBT, in etch step, can use the selective etch of GaAs and InGaP.Collector electrode 13 is made by the alloy of Ni/AuGe/Au, and base electrode 12 is made by Ti/Pt/Au.
At first, etching n type GaAs emitter layer 14 when covering is formed on WSi emitter electrode 11 on the emitter region is to expose n type InGaP emitter protruding layer 15 (steps A).In this case, use the selective etch of GaAs and InGaP.Then, etching n type InGaP emitter protruding layer 15, p type GaAs base layer 16 and n type GaAs collector layer 17 are to expose n
+Type GaAs electron collector layer 18 (step B).Step B is the step that forms base stage table top layer.W1 is more little for the base stage mesa width, and then base stage-collector capacitance is more little, that is, radiofrequency characteristics is excellent more.
Here, the function of heterojunction emitter protruding layer will be briefly introduced.By etching and the surface of removing the p type base layer that emitter part exposes have many surface states, and the surface recombination in the described surface state causes crystal degradation.To solve this problem in order taking measures, to protect this big base layer surface of the required area that surrounds emitter layer as far as possible by another stabilized zone of deposit (that is emitter protruding layer).Adopt this structure of emitter protruding layer also to be called as around (girdling) structure.
Etching n type InGaP emitter protruding layer 15 in the W4 of emitter mesa interval is to expose p type GaAs base layer 16 (step C).This etching is a selective etch, forms thus to have the opening that protrudes A/F W2.When in narrow emitter mesa interval W4, forming the narrow emitter protrusion of high accuracy A/F W2 with the increase radio-frequency performance, need high accuracy photoetching technique and high accuracy lithographic technique, that is, need expensive manufacture method.
Then, using deposit to peel off (lift-off), to form width be 1 μ m or base electrode 12 (step D) littler and that made by Ti/Pt/Au.Then, use deposit to peel off subsequently and under about 400 ℃, be heated into alloy, thereby at n
+Form the collector electrode of making by AuGeNi/Au 13 (step e) on the type GaAs electron collector layer 18.
In HBT with excellent radiofrequency characteristics, in order to improve its function in radio frequency band, base stage mesa width W1 is narrowed down, guarantee the protrusion A/F W2 among the narrow base stage mesa width W1, and the formation width is 1 μ m or littler base electrode.Yet as mentioned above, manufacturing cost has increased.
Therefore, the HBT structure that figure 8 illustrates the simple version of this manufacture method and utilize the method manufacturing of this simplification.In the HBT of Fig. 8 structure, the protrusion opening is not set at first, and base electrode 82 penetrates n type InGaP emitter protruding layer 15 to contact with p type GaAs base layer 16, wherein this n type InGaP emitter protruding layer 15 typically with 16 one-tenth heterojunction of p type GaAs base layer.In this HBT structure, do not need etching n type InGaP emitter protruding layer 15 to form the step of little opening, cause simple manufacturing method.After base electrode 82 is deposited and is formed on the n type InGaP emitter protruding layer 15, make base electrode 82 thermal diffusions in n type InGaP emitter protruding layer 15 by heating, thereby base electrode 82 contact with p type GaAs base layer 16.In this structure, protrude A/F and do not present, and base width W3 is narrow, thereby can make the base stage mesa width W1 of base stage mesa width W1 less than any structure, and base stage-collector capacitance is also very little, causes gain and efficient to improve, and gratifying radiofrequency characteristics.
Notice that collector electrode 13 made by the alloy of Ni/AuGe/Au, and base electrode 82 made by Pt/Ti/Pt/Au, wherein Pt is introduced in basecoat.
At first, etching n type GaAs emitter layer 14 when covering is formed on WSi emitter electrode 11 on the emitter region is to expose n type InGaP emitter protruding layer 15 (steps A).In this case, use the selective etch of GaAs and InGaP.Then, etching n type InGaP emitter protruding layer 15, p type GaAs base layer 16 and n type GaAs collector layer 17 are to expose n
+Type GaAs electron collector layer 18 (step B).Step B is the step that forms base stage table top layer.W1 is more little for the base stage mesa width, and then base stage-collector capacitance is more little, that is, radiofrequency characteristics is excellent more.Steps A and B are identical with Fig. 7's.
After forming the base stage table top, use deposit to peel off and on n type InGaP emitter protruding layer 15, form the base electrode of making by Pt/Ti/Pt/Au 82 (step F)., use deposit peel off collector electrode 13 that formation by AuGeNi/Au made, under about 400 ℃, be heated into alloy subsequently to form collector electrode 13 (step G) thereafter.Heating under about 400 ℃ not only allows collector electrode 13 to become alloy, and make Pt thermal diffusion (because Pt has high thermal diffusion coefficient) in n type InGaP emitter protruding layer 15 in the bottom of the Pt/Ti/Pt/Au base electrode 82 on the n type InGaP emitter protruding layer 15, to contact, cause ohm to connect with p type GaAs base layer 16.
In this structure, the improvement of radio-frequency performance does not need to be used to form the high-performance manufacture method of the narrow emitter protrusion of the high accuracy A/F W2 among the narrow emitter mesa interval W4, has caused low cost.In addition, owing to need W1＞W4＞W3, W4 is narrower at interval therefore can to make emitter mesa for identical base width W3, and as a result of, base stage mesa width W1 is narrowed down.Thus, can further reduce base stage-collector capacitance, the feasible thus performance that can improve in the radio frequency band.
(structure of power amplifier)
Then, will introduce the power amplifier of the bipolar transistor that adopts the embodiment of the invention.
Fig. 9 A is the figure that the exemplary configurations of the power amplifier that the bipolar transistor of the embodiment of the invention of a plurality of Figure 1B wherein is connected in parallel is shown.Fig. 9 B is the equivalent circuit diagram that the power amplifier of Fig. 9 A is shown.In the exemplary configurations of the power amplifier of Fig. 9 A and 9B, four bipolar transistors are connected in parallel.
Power amplifier is made of a plurality of bipolar transistor Q, capacitor C and resistance R.The base electrode of a plurality of bipolar transistor Q is connected to radiofrequency signal input (RF input) end via capacitor C publicly, and is connected to bias voltage conveying (DC input) end via resistance R.Capacitor C is to be used to electric capacity that radiofrequency signal is passed through.Resistance R is the inhibition resistance that is used to prevent that excessive base current from flowing.The emitter electrode of a plurality of bipolar transistor Q is via common conductor and via hole and ground connection.The collector electrode of a plurality of bipolar transistor Q is connected to radiofrequency signal output (RF output) end publicly.
Because this power amplifier has the structure that the bipolar transistor of a plurality of Figure 1B wherein is connected in parallel, so base stage-collector capacitance is little, thereby has improved gain and efficient, has caused gratifying radiofrequency characteristics.In addition, the height of anti-the breakdown characteristics, thus no longer need to be used to prevent the base stage steady resistance of heat dissipation.Therefore, in this case, when having constructed when wherein bipolar transistor being thought of as the power amplification HBT that a unit and a plurality of unit be connected in parallel, can make the area of this structure reduce amount corresponding to the required external base resistance (base stage steady resistance) 130 of conventional structure (Figure 11 A etc.).
As mentioned above,, in the unit, there is excellent even operation, and can reduces base stage-collector capacitance, obtain excellent radiofrequency characteristics with low cost thus according to the bipolar transistor of the embodiment of the invention.Under the situation of multi-unit power amplifier, can realize having the power amplifier of small size (not having external base resistance) and excellent anti-breakdown characteristics.
Although specifically introduced the present invention, above stated specification all is schematic and nonrestrictive in all respects.Should be appreciated that and to make many other modifications and variations without departing from the present invention.
Claims (10)
1, a kind of bipolar transistor that is formed on the Semiconductor substrate comprises:
Base stage refers to;
Two emitters refer to, refer to be provided with symmetrically and refer to parallel with this base stage with respect to this base stage as the center; And
Two collector electrodes refer to, are arranged to insert and put that this base stage refers to and these two emitters refer to.
2, according to the bipolar transistor of claim 1, wherein said two emitters refer to have separately 30 μ m or littler length.
3, according to the bipolar transistor of claim 1, wherein said base stage refers to have 1 μ m or littler electrode width.
4, according to the bipolar transistor of claim 2, wherein said base stage refers to have 1 μ m or littler electrode width.
5, according to the bipolar transistor of claim 1, wherein:
Described bipolar transistor is to have the heterojunction bipolar transistor that becomes the emitter layer of heterojunction with this base layer; And
Described base stage refers to have electrode, this electrode have broad gap layer that wherein said electrode penetrates described emitter layer with the structure of described base layer ohmic contact.
6, according to the bipolar transistor of claim 2, wherein:
Described bipolar transistor is to have the heterojunction bipolar transistor that becomes the emitter layer of heterojunction with this base layer; And
Described base stage refers to have electrode, this electrode have broad gap layer that wherein said electrode penetrates described emitter layer with the structure of described base layer ohmic contact.
7, according to the bipolar transistor of claim 3, wherein:
Described bipolar transistor is to have the heterojunction bipolar transistor that becomes the emitter layer of heterojunction with this base layer; And
Described base stage refers to have electrode, this electrode have broad gap layer that wherein said electrode penetrates described emitter layer with the structure of described base layer ohmic contact.
8, according to the bipolar transistor of claim 4, wherein:
Described bipolar transistor is to have the heterojunction bipolar transistor that becomes the emitter layer of heterojunction with this base layer; And
Described base stage refers to have electrode, this electrode have broad gap layer that wherein said electrode penetrates described emitter layer with the structure of described base layer ohmic contact.
9, a kind of bipolar transistor that is formed on the Semiconductor substrate comprises:
Base stage refers to;
The even number emitter refers to, refers to be provided with symmetrically and be configured in the vertical with respect to this base stage as the center refer to parallel with this base stage; And
Two collector electrodes refer to, are arranged to insert and put that this base stage refers to and this even number emitter refers to.
10, a kind of power amplifier comprises:
A plurality of according to any one described bipolar transistor in the claim 3 to 9, be used to carry out electric current and amplify, wherein said a plurality of bipolar transistors are connected in parallel, and its base stage connects publicly, and its collector electrode is connected to the radiofrequency signal output, and grounded emitter;
Electric capacity connects the public described base stage that is connected of described radio-frequency (RF) signal input end and described a plurality of bipolar transistors; And
Resistance, the public described base stage that is connected of connection bias voltage delivery end and described a plurality of bipolar transistors.
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|---|---|---|---|
| JP2005204606A JP2007027269A (en) | 2005-07-13 | 2005-07-13 | Bipolar transistor and power amplifier |
| JP204606/2005 | 2005-07-13 | ||
| JP221213/2005 | 2005-07-29 |
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| CN1897301A true CN1897301A (en) | 2007-01-17 |
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| JP2007036138A (en) * | 2005-07-29 | 2007-02-08 | Matsushita Electric Ind Co Ltd | Bipolar transistor and power amplifier |
| JP5214523B2 (en) * | 2009-04-07 | 2013-06-19 | 日本電信電話株式会社 | Related keyword presentation device and program |
| JP2021052150A (en) | 2019-09-26 | 2021-04-01 | 株式会社村田製作所 | Power amplifier unit cell and power amplifier module |
-
2005
- 2005-07-13 JP JP2005204606A patent/JP2007027269A/en active Pending
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2006
- 2006-07-12 CN CN 200610101566 patent/CN1897301A/en active Pending
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| CN102710224A (en) * | 2012-06-14 | 2012-10-03 | 无锡中普微电子有限公司 | Multi-mode power amplifier and corresponding mobile communication equipment |
| CN102710224B (en) * | 2012-06-14 | 2015-09-23 | 无锡中普微电子有限公司 | Multimode power amplifier and corresponding mobile communication equipment |
| CN103633949A (en) * | 2012-08-21 | 2014-03-12 | 唯捷创芯(天津)电子技术有限公司 | Multimode power amplifier, multimode switching method and mobile terminal of multimode power amplifier |
| CN110021595A (en) * | 2018-01-10 | 2019-07-16 | 株式会社村田制作所 | Semiconductor device |
| CN110021595B (en) * | 2018-01-10 | 2022-12-06 | 株式会社村田制作所 | Semiconductor device with a plurality of semiconductor chips |
| CN111384161A (en) * | 2018-12-25 | 2020-07-07 | 株式会社村田制作所 | Bipolar transistor |
| CN111384161B (en) * | 2018-12-25 | 2023-04-14 | 株式会社村田制作所 | Bipolar transistor |
| CN110739921A (en) * | 2019-11-20 | 2020-01-31 | 厦门市三安集成电路有限公司 | Power amplifying unit and power amplifier |
| CN110739921B (en) * | 2019-11-20 | 2022-09-27 | 厦门市三安集成电路有限公司 | Power amplifying unit and power amplifier |
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| JP2007027269A (en) | 2007-02-01 |
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