CN1893124A - Semiconductor lighting element - Google Patents
Semiconductor lighting element Download PDFInfo
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- CN1893124A CN1893124A CNA2005100819023A CN200510081902A CN1893124A CN 1893124 A CN1893124 A CN 1893124A CN A2005100819023 A CNA2005100819023 A CN A2005100819023A CN 200510081902 A CN200510081902 A CN 200510081902A CN 1893124 A CN1893124 A CN 1893124A
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Abstract
The semiconductor luminous element includes following parts: a semiconductor luminous lamination includes a first lamination, a second lamination formed on the first lamination, and a luminous layer formed between the first lamination and the second lamination; a first electrode formed on first surface area at up side of the luminous lamination; a conductive layer of first transparent oxide formed on second surface area at up side of the luminous lamination; a second electrode formed on conductive layer of the transparent oxide. Adjusting proper distance between first electrode and second electrode makes semiconductor luminous element reach to optimal effect of current distribution. In addition, using proportion between total areas of first, second electrodes and front face area of luminous layer in luminous element adjusts straightforward bias voltage to raise luminous efficiency.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly relate to a kind of electrode configuration of semiconductor light-emitting elements.
Background technology
The application of semiconductor light-emitting elements is rather extensive, for example, can be applicable to optical display, laser diode, traffic sign, data memory device, communication device, lighting device and medical treatment device.In this skill, how one of technical staff's important topic is for improving emitting component at present.
In United States Patent (USP) the 5th, 563, disclose a kind of led configurations in No. 422, wherein on a p type contact layer, form as thin as a wafer a Ni/Au transparency conducting layer, reaching the effect that electric current disperses, and improve the characteristics of luminescence of light-emitting diode.With the transparency conducting layer that this type of material is made, its penetrance is only about 60%～70%, thereby will influence the luminous efficiency of LED yet in fact.
For improving this problem, utilize materials such as tin indium oxide to form a transparent oxide conductive layer in the prior art and replace traditional Ni/Au transparency conducting layer, because of the transparent oxide conductive layer has the higher penetrating rate, the light that light-emitting diode produces can both penetrate this transparent oxide conductive layer greatly; But compare with metal, the resistance of transparent oxide conductive layer still comes highly than metal, and when being applied to large-sized light-emitting diode, the current expansion effect of transparent oxide conductive layer just has its bottleneck to exist.
In United States Patent (USP) the 6th, 307, disclose a kind of electrode structure of light-emitting component in No. 218, reach uniform electric current decentralization by shape, the shape of electrode or the position of electrode that changes element.In addition in United States Patent (USP) the 6th, 614, disclose a kind of light emitting diode construction in No. 056, promote the electric current decentralization by a finger electrode.Again in United States Patent (USP) the 6th, 518, disclose a kind of iii-nitride light emitting devices of tool spiral metal electrode in No. 598, utilize engraving method, use on the epitaxial structure of light-emitting diode surface and form spiral groove.Therefore, have between the electrical metal electrode of two kinds of differences, also form the distribution of spiral parallel construction in follow-up formation.Utilize spiral metal electrode that injection current is evenly distributed between two kinds of electrical electrodes, disperse to promote electric current.
The neither printing opacity of disclosed metal electrode itself in aforementioned each existing skill, when metal electrode when the LED surface distribution density is too high, then relative light extraction area diminishes, thereby makes light-emitting diode luminance reduce; Yet metal electrode is when the LED surface distribution density is too low, and electric current disperses just there is not significant effect, and can cause driving voltage to rise, and reduces whole lighting efficiency.Therefore how to reach the luminosity and the best electric current dispersion effect of light-emitting diode the best, and then the lifting luminous efficiency is an important research project.
Summary of the invention
Shortcoming in view of above-mentioned existing skill, the invention provides a kind of semiconductor light-emitting elements, comprise: the luminous lamination of semiconductor comprises that one first lamination, one second lamination are formed on this first lamination and are formed at a luminescent layer between first lamination and second lamination; One first electrode is formed on the first surface district of this luminous lamination upside; One first transparent oxide conductive layer is formed on the second surface district of this luminous lamination upside; And one second electrode be formed on this transparent oxide conductive layer, wherein on this semiconductor light-emitting elements in the view plane, the shortest spacing of first electrode edge and second electrode edge in fact between 150 μ m to 250 μ m, the gross area of first electrode and second electrode account for light-emitting component luminescent layer front face area 15% to 25% between.
Aforesaid semiconductor light-emitting elements, wherein the material of this transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein the shape of this first electrode comprises and is selected from point-like, wire, and plane.Wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
Aforesaid semiconductor light-emitting elements, wherein the shape of this second electrode comprises and is selected from point-like, wire, and plane.Wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
Aforesaid semiconductor light-emitting elements, wherein the gross area of this first electrode and second electrode ratio that accounts for light-emitting component luminescent layer front face area can change by the size of adjusting first electrode or second electrode; If electrode is a wire electrode, then can adjust the ratio that the wide gross area that changes first electrode and second electrode of electrode wires accounts for light-emitting component luminescent layer front face area.
Aforesaid semiconductor light-emitting elements, wherein the first surface district of this luminous lamination is the surface region of a helical form, dendroid distribution or other shape that can be equally spaced.
Aforesaid semiconductor light-emitting elements, wherein the second surface district of this luminous lamination is the surface region of a helical form or dendroid distribution or other shape that can be equally spaced.
Aforesaid semiconductor light-emitting elements, wherein the second surface district of this luminous lamination is the p N-type semiconductor N contact zone of a high-dopant concentration, oppositely wears tunnel district or surface coarsening district.
Aforesaid semiconductor light-emitting elements, wherein, this first lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, this luminescent layer comprises at least a material or other the replaceable material that is selected from GaN, AlGaN, InGaN, AlInGaN and the AlGaInP institute constituent material cohort.
Aforesaid semiconductor light-emitting elements, wherein, this second lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements wherein, also is included in and forms a substrate on the lower surface of this luminous lamination downside.
Aforesaid semiconductor light-emitting elements wherein, also is included in and forms a tack coat between this substrate and the luminous lamination.
Aforesaid semiconductor light-emitting elements, wherein, this first lamination comprises one second transparent oxide conductive layer.Wherein the material of this second transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein this first surface district is positioned on first lamination.
Aforesaid semiconductor light-emitting elements, wherein this first surface district is positioned on the second transparent oxide conductive layer.
Aforesaid semiconductor light-emitting elements, wherein this tack coat comprises and is selected from polyimides (PI), benzocyclobutene (BCB), reached at least a material in fluorine cyclobutane (PFCB) the institute constituent material cohort.
Aforesaid semiconductor light-emitting elements wherein also comprises one first conversion zone between this substrate and this tack coat.
Aforesaid semiconductor light-emitting elements, wherein this first conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements wherein also comprises one second conversion zone between this luminous lamination and this tack coat.
Aforesaid semiconductor light-emitting elements, wherein this second conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements wherein also comprises a reflector between this substrate and this first conversion zone.
Aforesaid semiconductor light-emitting elements, wherein this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
Aforesaid semiconductor light-emitting elements wherein also comprises a reflector between this luminous lamination and this second conversion zone.
Aforesaid semiconductor light-emitting elements, wherein this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
Aforesaid semiconductor light-emitting elements, wherein this tack coat comprise be selected from tin indium oxide, and metal institute constituent material cohort at least a material.
Aforesaid metal comprise be selected from In, Sn, Al.Au, Pt, Zn, Ag, Ti, Pb, Ni, AuBe, Au-Sn, Au-Si, Pb-Sn and Au-Ge, PdIn, and AuZn institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein this substrate comprises at least a material that is selected from GaP, SiC, Al2O3, GaAs, GaP, AlGaAs, GaAsP and the glass institute constituent material cohort.
Description of drawings
Fig. 1 is a schematic diagram, shows the first preferred embodiment light-emitting component profile of the present invention;
Fig. 2 is a schematic diagram, shows the first preferred embodiment light-emitting component top view of the present invention;
Fig. 3 is a schematic diagram, shows the graph of a relation of different electrode spacings of the first preferred embodiment light-emitting component of the present invention and light-emitting component luminosity;
Fig. 4 is a schematic diagram, shows the graph of a relation of different electrode spacings of the first preferred embodiment light-emitting component of the present invention and light-emitting component luminous efficiency;
Fig. 5 is a schematic diagram, shows the second preferred embodiment light-emitting component profile of the present invention;
Fig. 6 is a schematic diagram, shows the second preferred embodiment light-emitting component top view of the present invention;
Fig. 7 is a schematic diagram, shows under the different electrode spacings of the second preferred embodiment light-emitting component of the present invention the graph of a relation of forward current and light-emitting component luminous power;
Fig. 8 is a schematic diagram, shows that the second preferred embodiment light-emitting element electrode of the present invention accounts for the ratio of light-emitting component luminescent layer front face area and the graph of a relation of luminous efficiency;
Fig. 9 is a schematic diagram, shows the 3rd preferred embodiment light-emitting component profile of the present invention;
Figure 10 is a schematic diagram, shows that the 3rd preferred embodiment light-emitting element electrode of the present invention accounts for the ratio of light-emitting component luminescent layer front face area and the graph of a relation of luminous efficiency.
The simple symbol explanation
10 substrates
11 resilient coatings
12 first nitride laminations
13 luminescent layers
14 second nitride laminations
15 first transparent oxide conductive layers
16 first electrodes
17 second electrodes
20 substrates
21 resilient coatings
22 first nitride laminations
23 luminescent layers
24 second nitride laminations
25 transparent oxide conductive layers
The groove of 26 spiral
27 first electrodes
28 second electrodes
30 substrates
31 tack coats
32 first transparent oxide conductive layers
33 first nitride laminations
34 luminescent layers
35 second nitride laminations
36 second transparent oxide conductive layers
The groove of 37 spiral
38 first electrodes
39 second electrodes
Embodiment
Embodiment 1
See also Fig. 1, comprise a substrate 10 according to the semiconductor light-emitting elements 1 of one embodiment of the present invention; Be formed at the resilient coating 11 on this substrate 10; Be formed at one first nitride lamination 12 on this resilient coating 11, its upper surface comprises a first surface district and a second surface district; Be formed at the luminescent layer 13 in this second surface district; Be formed at one second nitride lamination 14 on this luminescent layer 13; Be formed at the transparent oxide conductive layer 15 on this second nitride lamination 14; Be formed at one first electrode 16 in this first surface district; And be formed at one second electrode 17 on this transparent oxide conductive layer 15.See also Fig. 2, the spacing d of first electrode 16 and second electrode 17 impacts the brightness and the CURRENT DISTRIBUTION of light-emitting component, and the inventor carries out following studies have shown that.
As shown in Table 1, the inventor is about 3 * 10 in the fixing light-emitting component area of plane
5μ m
2Under (480 μ m * 640 μ m), fixing injection current 0.07A, the area of first electrode 16 and second electrode 17 is 1.53 * 10
4μ m
2Change the spacing of first electrode 16 and second electrode 17, the variation of the luminosity of light-emitting component, forward bias voltage drop and luminous efficiency down.Relationship change between luminosity and electrode spacing as shown in Figure 3, luminosity peaks at electrode spacing luminosity between 200 μ m to 250 μ m along with electrode spacing is increased progressively by 130 μ m to 200 μ m, just successively decreases after the 250 μ m.Again as can be known by the graph of a relation of Fig. 4 luminous efficiency (luminosity Iv/ forward bias voltage drop Vf) and electrode spacing, when electrode spacing under 150 μ m to 280 mu m ranges, the luminosity of light-emitting component 1 and luminous efficiency all can reach best scope.
| Electrode spacing d (μ m) | Luminosity Iv (mcd) | Forward bias voltage drop Vf (V) | Luminous efficiency (Iv/ Vf) |
| 350 | 699.7 | 3.85 | 181.74 |
| 300 | 709.5 | 3.79 | 187.2 |
| 250 | 713.4 | 3.72 | 191.77 |
| 200 | 712 | 3.65 | 195.07 |
| 150 | 676.2 | 3.59 | 188.36 |
| 130 | 639.5 | 3.58 | 178.63 |
Embodiment 2
See also Fig. 5, comprise a substrate 20 according to the semiconductor light-emitting elements 2 of one embodiment of the present invention; Be formed at the resilient coating 21 on this substrate 20; Be formed at one first nitride lamination 22 on this resilient coating 21; Be formed at the luminescent layer 23 on this first nitride lamination 22; Be formed at one second nitride lamination 24 on this luminescent layer 23; Be formed at the transparent oxide conductive layer 25 on this second nitride lamination 24; One helical groove 26 arrives this first nitride lamination 22 by this transparent oxide conductive layer 25, the second nitride lamination 24, luminescent layer 23 and the first nitride lamination 22, exposes the first nitride lamination 22 of part, forms a first region; Be formed at one first electrode 27 on this first region; And one second electrode 28 that is formed at this transparent oxide conductive layer 25.See also Fig. 6, this first electrode 27 and this second electrode 28 are helical form; Wherein in these semiconductor light-emitting elements 2 top views, the spacing d of first electrode 27 and second electrode 28, and first electrode 27 and second electrode 28 ratio that accounts for the luminescent layer front face area brightness and the CURRENT DISTRIBUTION of light-emitting component impacted, the inventor carries out following studies have shown that.
By the relation of forward current shown in Figure 7 and luminous power as can be known, be 1 * 10 at the light-emitting component front face area
6μ m
2(1000 μ m * 1000 μ m), drive with electric current 350mA under the situation of operation, it is 24.4% time that first electrode 27 and second electrode, 28 areas account for light-emitting component luminescent layer front face area ratio, the electrode spacing of first electrode 27 and second electrode 28 is under 130 μ m, 166 μ m and 210 μ m, electrode spacing is at the light-emitting component of 166 μ m, and electrode spacing is at the light-emitting component of 210 μ m, and its luminous power all is higher than the light-emitting component of electrode spacing 130 μ m.But the forward bias voltage drop of light-emitting component increases and increases progressively along with electrode spacing, also can find this result by the experimental data among the embodiment 1 in addition, in order further to solve the high problem in forward bias voltage drop limit again, therefore adjust its forward bias voltage drop by the area that changes first electrode and second electrode.
Fig. 8 is 1 * 10 for electrode accounts for the graph of a relation of the ratio of light-emitting component luminescent layer front face area to luminous efficiency at the light-emitting component front face area
6μ m
2First electrode and second electrode spacing are under 166 μ m, first electrode and second electrode area account for light-emitting component luminescent layer front face area ratio and are respectively 14.3%, 15.6%, 17.8%, 18.4%, 23%, 24.4% and 30% time, account for light-emitting component luminescent layer front face area ratio at electrode area and be about under 15% to 25% scope, luminous efficiency reaches a preferred condition; Electrode area accounts for light-emitting component luminescent layer front face area ratio and is about under 17% to 24.4% scope, and luminous efficiency reaches an optimum state.
Embodiment 3
See also Fig. 9, comprise a substrate 30 according to the semiconductor light-emitting elements 3 of one embodiment of the present invention; Be formed at the tack coat 31 on this substrate 30, for utilizing joining technique, the luminous lamination that bonds, comprise the one first transparent oxide conductive layer 32 that is formed on this tack coat 31, be formed at one first quaternary (AlInGaP) on this first transparent oxide conductive layer 32 semiconductor laminated 33, be formed at a luminescent layer 34 on this first quaternary semiconductor lamination 33, be formed at one second quaternary semiconductor lamination 35 on this luminescent layer 34 and be formed at one second transparent oxide conductive layer 36 on this second quaternary semiconductor lamination 35; The groove 37 of one spiral passes through this second transparent oxide conductive layer 36, the second quaternary semiconductor lamination 35, luminescent layer 34, reaches the first quaternary semiconductor lamination 33, arrive this first transparent oxide conductive layer 32, expose the first transparent oxide conductive layer 32 of part, form a first region; Be formed at one first electrode 38 on this first region; And be formed at one second electrode 39 on this first transparent oxide conductive layer 32.The top view of semiconductor light-emitting elements 3 is similar to the top view of light-emitting component 2, and first electrode 38 and this second electrode 39 are spiral; It is 5.6 * 10 at the light-emitting component front face area
5μ m
2(750 μ m * 750 μ m), electric current is 350mA, it is 24.4% situation that first electrode 38 and second electrode, 39 areas account for light-emitting component luminescent layer front face area ratio, and when the spacing of first electrode 38 and second electrode 39 was 130 μ m, the luminous power of light-emitting component was 58.35mW; When electrode spacing during at 166 μ m, the luminous power of light-emitting component is 67.47mW; At electric current is the situation of 400mA, and when the spacing of first electrode 38 and second electrode 39 was 130 μ m, the luminous power of light-emitting component was 66.03mW, and when electrode spacing was 166 μ m, the luminous power of light-emitting component was 76.33mW; At electric current is the situation of 600mA, and when the spacing of first electrode 38 and second electrode 39 was 130 μ m, the luminous power of light-emitting component was 93.18mW, and when electrode spacing was 166 μ m, the luminous power of light-emitting component was 100.87mW; By above-mentioned data as can be known, electrode spacing is that to be better than electrode spacing be 130 μ m persons for the luminous power of the light-emitting component of 166 μ m.
Figure 10 is 5.6 * 10 for electrode accounts for the graph of a relation of the ratio of light-emitting component luminescent layer front face area to luminous efficiency at the light-emitting component front face area
5μ m
2First electrode and second electrode spacing are under 166 μ m, first electrode and second electrode area account for light-emitting component luminescent layer front face area ratio and are respectively 14.3%, 15.6%, 17.8%, 18.4%, 23%, 24.4% and 30% time, similarly to Example 2, account for light-emitting component luminescent layer front face area ratio at electrode area and be about under 15% to 25% scope, luminous efficiency reaches a preferred condition; Electrode area accounts for light-emitting component luminescent layer front face area ratio and is about under 17% to 18.4% scope, and luminous efficiency reaches an optimum state.
Via design principle of the present invention, applicable to middle input power (about 0.3 watt), front face area is 2.5 * 10
5μ m
2Light-emitting component, and big input power (＞1 watt), front face area is greater than 1 * 10
6μ m
2Light-emitting component.
Aforesaid semiconductor light-emitting elements, wherein the material of this transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein the material of this first transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein the shape of this first electrode also can be branch wire or other shape that can be equally spaced except that helical form.
Aforesaid semiconductor light-emitting elements, wherein the shape of this second electrode also can be dendroid or other shape that can be equally spaced except that helical form.
Aforesaid semiconductor light-emitting elements, wherein the surface region of this second nitride lamination is the p N-type semiconductor N contact zone of a high-dopant concentration, oppositely wears tunnel district or surface coarsening district.
Aforesaid semiconductor light-emitting elements, wherein, this first nitride lamination comprise be selected from AlN, GaN, AlGaN, InGaN, and AlInGaN institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, this first quaternary semiconductor lamination comprise be selected from GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, this luminescent layer comprise be selected from GaN, AlGaN, InGaN, AlInGaN, and AlGaInP institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, this second nitride lamination comprise be selected from AlN, GaN, AlGaN, InGaN, and AlInGaN institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, this second quaternary semiconductor lamination comprise be selected from GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
Aforesaid semiconductor light-emitting elements, wherein, the material of the second transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein this tack coat comprises and is selected from polyimides (PI), benzocyclobutene (BCB), reached at least a material in fluorine cyclobutane (PFCB) the institute constituent material cohort.
Aforesaid semiconductor light-emitting elements wherein also comprises one first conversion zone between this substrate and this tack coat.
Aforesaid semiconductor light-emitting elements, wherein this first conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements wherein also comprises one second conversion zone between this luminous lamination and this tack coat.
Aforesaid semiconductor light-emitting elements, wherein this second conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements wherein also comprises a reflector between this substrate and this first conversion zone.
Aforesaid semiconductor light-emitting elements wherein also comprises a reflector between this luminous lamination and this second conversion zone.
Aforesaid semiconductor light-emitting elements, wherein this reflector comprise be selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, wherein this tack coat comprise be selected from tin indium oxide, and metal institute constituent material cohort at least a material.
Aforesaid metal comprise be selected from In, Sn, Al.Au, Pt, Zn, Ag, Ti, Pb, Ni, AuBe, Au-Sn, Au-Si, Pb-Sn and Au-Ge, PdIn, and AuZn institute constituent material cohort at least a material.
Aforesaid semiconductor light-emitting elements, this substrate wherein, comprise be selected from GaP, SiC, Al2O3, GaAs, GaP, AlGaAs, GaAsP, and glass institute constituent material cohort at least a material.
The above person only is the preferred embodiments of the present invention, and scope of the present invention is not limited to these preferred embodiments, and is all according to any change that the present invention did, and all belongs to the scope of claim of the present invention.
Claims (40)
1. semiconductor light-emitting elements comprises:
The luminous lamination of semiconductor, comprise a ground floor, a second layer be formed on this ground floor and be formed at this ground floor and this second layer between the semiconductor luminescent layer, wherein this semiconductor light emitting lamination has a upper surface, comprises a first surface district and a second surface district;
One first electrode is formed on this first surface district;
One first transparent oxide conductive layer is formed on this second surface district; And
One second electrode is formed on this transparent oxide conductive layer, and wherein in the last view plane of this semiconductor light-emitting elements, the positive area of plane of this light-emitting component is greater than 2.5 * 10
5μ m
2, the shortest spacing of first electrode edge and second electrode edge in fact between 150 μ m to 250 μ m, the gross area of first electrode and second electrode account for light-emitting component luminescent layer front face area 15% to 25% between.
2. semiconductor light-emitting elements as claimed in claim 1, wherein the material of this transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
3. semiconductor light-emitting elements as claimed in claim 1, wherein the shape of this first electrode comprises and is selected from point-like, wire, and plane.
4. semiconductor light-emitting elements as claimed in claim 3, wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
5. semiconductor light-emitting elements as claimed in claim 1, wherein the shape of this second electrode comprises and is selected from point-like, wire, and plane.
6. semiconductor light-emitting elements as claimed in claim 5, wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
7. semiconductor light-emitting elements as claimed in claim 4, wherein the first surface district of this luminous lamination is the surface region of a helical form, dendroid distribution or other shape that can be equally spaced.
8. semiconductor light-emitting elements as claimed in claim 6, wherein the second surface district of this luminous lamination is the surface region of a helical form, dendroid distribution or other shape that can be equally spaced.
9. semiconductor light-emitting elements as claimed in claim 1, wherein the second surface district of this luminous lamination is the p N-type semiconductor N contact zone of a high-dopant concentration, oppositely wears tunnel district or surface coarsening district.
10. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this first lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
11. semiconductor light-emitting elements as claimed in claim 1, wherein, this luminescent layer comprise be selected from GaN, AlGaN, InGaN, AlInGaN, and AlGaInP institute constituent material cohort at least a material or other replaceable material.
12. semiconductor light-emitting elements as claimed in claim 1, wherein, this second lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
13. semiconductor light-emitting elements as claimed in claim 1 wherein, also is included in and forms a substrate on the lower surface of this luminous lamination downside.
14. semiconductor light-emitting elements as claimed in claim 13 wherein, also is included in and forms a tack coat between this substrate and the luminous lamination.
15. semiconductor light-emitting elements as claimed in claim 14, wherein, this first lamination comprises one second transparent oxide conductive layer.
16. semiconductor light-emitting elements as claimed in claim 15, wherein the material of this second transparent oxide conductive layer comprise be selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum, and zinc-tin oxide institute constituent material cohort at least a material.
17. semiconductor light-emitting elements as claimed in claim 15, wherein this first surface district is positioned on first lamination.
18. semiconductor light-emitting elements as claimed in claim 17, wherein this first surface district is positioned on the second transparent oxide conductive layer.
19. semiconductor light-emitting elements as claimed in claim 18, wherein the shape of this first electrode comprises and is selected from point-like, wire, and plane.
20. semiconductor light-emitting elements as claimed in claim 19, wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
21. semiconductor light-emitting elements as claimed in claim 15, wherein the shape of this second electrode comprises and is selected from point-like, wire, and plane.
22. semiconductor light-emitting elements as claimed in claim 21, wherein this wire is zigzag shape, branch wire or other shape that can be equally spaced.
23. semiconductor light-emitting elements as claimed in claim 20, wherein the first surface district of this luminous lamination is the surface region of a helical form, dendroid distribution or other shape that can be equally spaced.
24. semiconductor light-emitting elements as claimed in claim 22, wherein the second surface district of this luminous lamination is the surface region of a helical form, dendroid distribution or other shape that can be equally spaced.
25. semiconductor light-emitting elements as claimed in claim 15, wherein the second surface district of this luminous lamination is the p N-type semiconductor N contact zone of a high-dopant concentration, oppositely wears tunnel district or surface coarsening district.
26. semiconductor light-emitting elements as claimed in claim 15, wherein, this first lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
27. semiconductor light-emitting elements as claimed in claim 15, wherein, this luminescent layer comprise be selected from GaN, AlGaN, InGaN, AlInGaN, and AlGaInP institute constituent material cohort at least a material or other replaceable material.
28. semiconductor light-emitting elements as claimed in claim 15, wherein, this second lamination comprise be selected from AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, and AlGaAs institute constituent material cohort at least a material or other replaceable material.
29. semiconductor light-emitting elements as claimed in claim 14, wherein this tack coat comprises and is selected from polyimides, benzocyclobutene, reached at least a material in the fluorine cyclobutane institute constituent material cohort.
30. semiconductor light-emitting elements as claimed in claim 14 wherein also comprises one first conversion zone between this substrate and this tack coat.
31. semiconductor light-emitting elements as claimed in claim 30, wherein this first conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
32. semiconductor light-emitting elements as claimed in claim 14 wherein also comprises one second conversion zone between this luminous lamination and this tack coat.
33. semiconductor light-emitting elements as claimed in claim 32, wherein this second conversion zone comprise be selected from SiNx, Ti, and Cr institute constituent material cohort at least a material.
34. semiconductor light-emitting elements as claimed in claim 30 wherein also comprises a reflector between this substrate and this first conversion zone.
35. semiconductor light-emitting elements as claimed in claim 34, wherein this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
36. semiconductor light-emitting elements as claimed in claim 32 wherein also comprises a reflector between this luminous lamination and this second conversion zone.
37. semiconductor light-emitting elements as claimed in claim 36, wherein this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
38. semiconductor light-emitting elements as claimed in claim 14, wherein this tack coat comprise be selected from tin indium oxide, and metal institute constituent material cohort at least a material.
39. semiconductor light-emitting elements as claimed in claim 38, wherein this metal comprise be selected from In, Sn, Al.Au, Pt, Zn, Ag, Ti, Pb, Ni, AuBe, Au-Sn, Au-Si, Pb-Sn and Au-Ge, PdIn, and AuZn institute constituent material cohort at least a material.
40. semiconductor light-emitting elements as claimed in claim 13, wherein this substrate comprises at least a material that is selected from GaP, SiC, Al2O3, GaAs, GaP, AlGaAs, GaAsP and the glass institute constituent material cohort.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103035809A (en) * | 2011-10-10 | 2013-04-10 | Lg伊诺特有限公司 | Light emitting device |
| CN107808918A (en) * | 2016-09-09 | 2018-03-16 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
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| US10818818B2 (en) | 2017-11-30 | 2020-10-27 | Epistar Corporation | Semiconductor device |
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| US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| EP1278249B8 (en) * | 2000-03-31 | 2013-11-27 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
| CN100345313C (en) * | 2003-07-24 | 2007-10-24 | 元砷光电科技股份有限公司 | LED and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103035809A (en) * | 2011-10-10 | 2013-04-10 | Lg伊诺特有限公司 | Light emitting device |
| CN107808918A (en) * | 2016-09-09 | 2018-03-16 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
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