CN1266779C - Light-emitting diode with adhered reflecting layer and its making method - Google Patents

Light-emitting diode with adhered reflecting layer and its making method Download PDF

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Publication number
CN1266779C
CN1266779C CN 03101507 CN03101507A CN1266779C CN 1266779 C CN1266779 C CN 1266779C CN 03101507 CN03101507 CN 03101507 CN 03101507 A CN03101507 A CN 03101507A CN 1266779 C CN1266779 C CN 1266779C
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China
Prior art keywords
reflector
bonding
conversion zone
substrate
light
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CN1516296A (en
Inventor
刘文煌
曾子峰
谢明勋
叶丁玮
王仁水
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Epistar Corp
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Epistar Corp
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Abstract

The present invention discloses a light-emitting diode with an adhesion reflecting layer and a production method thereof. A laminated layer of a light emitting diode and a base plate with a reflecting layer are bonded with a transparent bonding layer, so that light rays radiated to the reflecting layer can be led out by reflection to increase the brightness of the light emitting diode.

Description

Light-emitting diode and manufacture method thereof with bonding reflector
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, particularly a kind of light-emitting diode and manufacture method thereof with bonding reflector.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data storage device, communication device, lighting device and medical treatment device.How improving the brightness of light-emitting diode, is the important topic in the manufacturing of light-emitting diode.
Traditionally, a kind of method that increases luminosity is for utilizing Van der Waals for two semi-conducting material bonds together, however its shortcoming be Van der Waals for too a little less than, after the bond, the machinery of structure is strong to be become inadequately, is easy to generate the situation of separation.
United States Patent (USP) the 5th, 376 discloses a kind of method No. 580, in order to together with a light-emitting diode lamination and a transparency carrier bond, and produce ohm interface, and wherein this transparency carrier can be GaP, then light can be penetrated by light-emitting diode lamination and transparency carrier simultaneously.Yet the preceding technology of this method must apply with axial pressure on this light-emitting diode lamination and transparency carrier, and form one ohm of interface under the high temperature about 1000 ℃.Its major defect is in actual fabrication schedule, and so high bond temperature will be destroyed the characteristic of light-emitting diode, and luminous efficiency is reduced; Transparency carrier GaP itself still has color in addition, and the only about 60-70% of its light ejaculation rate is not a hundred per cent printing opacity, will cause the reduction of brightness.
Traditionally, another method that increases luminosity is for utilizing metal as the bond material, with a light-emitting diode lamination and another substrate bond together, this is the bond layer that utilizes metal material to form, can utilize the characteristic of its metal to form a mirrored effect, to not inject substrate and can not penetrate the bond layer by the light reflected back light-emitting diode lamination of light-emitting diode lamination directive substrate, reduce light by the absorptivity of substrate.In fabrication schedule,, can avoid the light-emitting diode characteristic destroyed with metal only about 300-450 ℃ as the bond temperature of bond layer.Yet in this bond technology, there are several shortcomings, when the temperature of metal bond is hanged down, metal level and treat to be subjected between two semiconductor layers of bond temperatures involved to produce reaction, therefore good to the reflectivity of light, reflecting surface can reach the reflectivity more than 90%, the luminous efficiency of light-emitting diode will improve, but, metal level do not produce the bond reaction because having high temperature action with two semiconductor layers for the treatment of bond, then the effect of metal bond reduces, metal level will separate with the semiconductor layer for the treatment of bond can't form an ohm interface, and this is a major defect.When the temperature of metal bond improves, then metal level and two treats that bond is good between the semiconductor layer of bond, but treat because of metal level and two to produce reaction between the semiconductor layer of bond, then the reflectivity of reflecting surface metal level will reduce greatly, can't reach minute surface function this be its another shortcoming.
When how the inventor solves aforesaid shortcoming in thinking, obtain an invention inspiration, think if by using a transparent bonding layer bond aforesaid metal level and light-emitting diode lamination, light is after producing via the light-emitting diode lamination, pass transparent bonding layer, directly produce total reflection, by the bright dipping of light-emitting diode lamination by this metal level; But by tack coat bonding light-emitting diode lamination and metal level, then the active force of its bonding only is a Van der Waals for as if list, then easily produces between the adhesive surface and peels off.Therefore, the present invention forms a conversion zone respectively in the surface that this light-emitting diode lamination and metal level and transparent bonding layer join, this conversion zone and this transparent bonding layer form reaction through heating, produce hydrogen bond or ionic bond, to strengthen the active force of adhesive surface, improve mechanical strength, can avoid the aforementioned middle shortcoming of separating that produces.Utilize the transparent bonding layer bonding in addition, the shortcoming that can avoid aforesaid metal level and light-emitting diode lamination bond to produce; Between transparent bonding layer and light-emitting diode lamination, form a transparency conducting layer in addition, can improve the electric current dispersion efficiency, will further can improve the brightness of light-emitting diode.
Summary of the invention
Main purpose of the present invention is to provide light-emitting diode and the manufacture method thereof with bonding reflector, in its manufacture process, by using a transparent bonding layer, link the substrate that a light-emitting diode lamination and has the reflector, make light penetrate this transparent bonding layer, the directive reflector, wherein, there is a conversion zone respectively in upper and lower surface at this transparent bonding layer, this conversion zone is joined with light-emitting diode lamination and reflector respectively, this conversion zone and this transparent bonding layer form reaction through heating, to strengthen the active force of adhesive surface, improve mechanical strength.The light in this directive reflector can be derived by reflection, to improve the brightness of light-emitting diode.Aforesaid in addition reflector also can be formed between light-emitting diode lamination and the conversion zone, and this tack coat just must not be defined as transparent bonding layer like this, and opaque tack coat also can use, and the direct directive of light reflector is derived by reflection.Above-mentioned manufacture method does not have the problem that the reflectivity of technology reduces and the effect of bond reduces before aforementioned, thereby can reach the effect of light total reflection, reaches the purpose that improves light-emitting diode luminance.
The light-emitting diode and the manufacture method thereof that have the bonding reflector according to one preferred embodiment of the present invention, comprise one second substrate, be formed at the metallic reflector on this second substrate, be formed at one first conversion zone on this metallic reflector, be formed at the transparent bonding layer on this first conversion zone, be formed at one second conversion zone on this transparent bonding layer, be formed at the transparency conducting layer on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer on this first surface zone, be formed at one first bond course on this first contact layer, be formed at the luminescent layer on this first bond course, be formed at one second bond course on this luminescent layer, be formed at one second contact layer on this second bond course, be formed at one first link electrode on this second contact layer, and be formed at one second link electrode on this second surface zone.
This manufacturing method for LED comprises the following step: form one second contact layer, one second bond course, a luminescent layer, one first bond course, one first contact layer, a transparency conducting layer, one second conversion zone successively on one first substrate, constitute one first lamination; On one second substrate, form a metallic reflector, one first conversion zone, constitute one second lamination; One transparent bonding layer is set, utilizes this transparent bonding layer together one first conversion zone surface combination of second conversion zone of this first lamination surface and this second lamination; Remove this first substrate, constitute one the 3rd lamination; The 3rd lamination suitably is etched to this transparency conducting layer, forms a transparency conducting layer exposed surface area; And on this second contact layer and this transparency conducting layer exposed surface area, form first link electrode and second link electrode respectively.
Aforementioned first substrate comprises at least a material that is selected from one group of material that GaP, GaAs and Ge constitute; Aforementioned second substrate comprises and is selected from Si, GaAs, SiC, Al 2O 3, at least a material or other replaceable material in one group of material that glass, quartz, GaP, GaAsP and AlGaAs constituted; Aforementioned transparent bonding layer comprises and is selected from polyimides (PI), benzocyclobutane (BCB) or crosses at least a material in one group of material that fluorine cyclobutane (PFCB) constituted; Aforementioned first conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted; Aforementioned second conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted; The aforementioned metal reflector comprises at least a material that is selected from one group of material that In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute; Aforementioned first contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP AlGaInP and AlGaAs constituted; Aforementioned first bond course, luminescent layer and second bond course comprise AlGaInP; Aforementioned second contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP, AlGaInP and AlGaAs constitute; Aforementioned transparency conducting layer comprises and is selected from tin indium oxide, the oxidation at least a material in tin, antimony tin, zinc oxide, zinc-tin oxide, one group of material that Au and Ni constituted.
Description of drawings
Fig. 1 is a schematic diagram, shows a kind of light-emitting diode with reflector according to one preferred embodiment of the present invention;
Fig. 2 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 1, first lamination before bonding two laminations;
Fig. 3 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 1, second lamination before bonding two laminations;
Fig. 4 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 1, behind bonding first lamination and second lamination, but removes the 3rd lamination structure before first substrate as yet;
Fig. 5 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 1 the 4th stromatolithic structure after removing first substrate;
Fig. 6 is a schematic diagram, shows a kind of light-emitting diode with reflector of another preferred embodiment according to the present invention;
Fig. 7 is a schematic diagram, shows a kind of light-emitting diode with reflector of the another preferred embodiment according to the present invention;
Fig. 8 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 7, the 5th lamination before bonding two laminations;
Fig. 9 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 7, the 6th lamination before bonding two laminations;
Figure 10 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 7, behind bonding two laminations, removes the 7th stromatolithic structure behind first substrate;
Figure 11 is a schematic diagram, shows according to the present invention a kind of light-emitting diode with reflector of a preferred embodiment again;
Figure 12 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 11, the 8th lamination before bonding two laminations;
Figure 13 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 11, the 9th lamination before bonding two laminations; And
Figure 14 is a schematic diagram, shows that method constructed in accordance makes in the process of light-emitting diode shown in Figure 11, behind bonding two laminations, removes the tenth stromatolithic structure behind first substrate.
Description of reference numerals
1 light-emitting diode
10 second substrates
11 metallic reflectors
12 transparent bonding layers
13 first contact layers
14 first bond courses
15 luminescent layers
16 second bond courses
17 second contact layers
18 first substrates
19 first link electrodes
20 second link electrodes
21 transparency conducting layers
22 first conversion zones
23 second conversion zones
6 light-emitting diodes
611 oxides or nitride reflector
7 light-emitting diodes
710 metallic reflection substrates
712 transparent bonding layers
713 first contact layers
714 first bond courses
715 luminescent layers
716 second bond courses
717 second contact layers
718 first substrates
719 first link electrodes
720 second link electrodes
721 transparency conducting layers
722 first conversion zones
723 second conversion zones
110 light-emitting diodes
1,110 second substrates
1111 metallic reflectors
1112 transparent bonding layers
1,113 first contact layers
1,114 first bond courses
1115 luminescent layers
1,116 second bond courses
1,117 second contact layers
1,118 first substrates
1,119 first link electrodes
1,120 second link electrodes
1121 transparency conducting layers
1,122 first conversion zones
1,123 second conversion zones
Embodiment
See also Fig. 1, the light-emitting diode 1 that has the bonding reflector according to one preferred embodiment of the present invention, comprise one second substrate 10, be formed at the metallic reflector 11 on this substrate, be formed at one first conversion zone 22 on this metallic reflector, be formed at the transparent bonding layer 12 on this first conversion zone, be formed at one second conversion zone 23 on this transparent bonding layer, be formed at the transparency conducting layer 21 on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 13 on this first surface zone, be formed at one first bond course 14 on this first contact layer, be formed at the luminescent layer 15 on this first bond course, be formed at one second bond course 16 on this luminescent layer, be formed at one second contact layer 17 on this second bond course, be formed at one first link electrode 19 on this second contact layer, and be formed at one second link electrode 20 on this second surface zone.
See also Fig. 1 and Fig. 2, the manufacture method of light-emitting diode 1 comprises the following step: form one second contact layer 17, one second bond course 16, a luminescent layer 15, one first bond course 14, one first contact layer 13, a transparency conducting layer 21, one second conversion zone 23 successively on one first substrate 18, constitute one first lamination 2; On one second substrate 10, form a metallic reflector 11, on this metallic reflector, form one first conversion zone 22, constitute one second lamination 3, as shown in Figure 3; One transparent bonding layer 12 is set, utilizes this transparent bonding layer together, constitute one the 3rd lamination 4, as shown in Figure 4 the first conversion zone surface combination of second conversion zone of this first lamination surface and this second lamination; Remove this first substrate 18, constitute one the 4th lamination 5, as shown in Figure 5; The 4th lamination 5 suitably is etched to this transparency conducting layer 21, forms a transparency conducting layer exposed surface area; And on this second contact layer 17 and this transparency conducting layer exposed surface area, form first link electrode 19 and second link electrode 20 respectively.
See also Fig. 6, another preferred embodiment has the light-emitting diode 6 in bonding reflector according to the present invention, its structure is similar to the light-emitting diode 1 of last preferred embodiment to manufacture method, its difference is in metallic reflector 11 usefulness oxides or nitride reflector 611 with last preferred embodiment and substitutes, and by this oxide or nitride reflector light is derived in the light utilization reflection in directive reflector.
See also Fig. 7, another preferred embodiment has the light-emitting diode 7 in bonding reflector according to the present invention, comprise a metallic reflection substrate 710, be formed at one first conversion zone 722 on this metallic reflection substrate, be formed at the transparent bonding layer 712 on this first conversion zone, be formed at one second conversion zone 723 on this transparent bonding layer, be formed at the transparency conducting layer 721 on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 713 on this first surface zone, be formed at one first bond course 714 on this first contact layer, be formed at the luminescent layer 715 on this first bond course, be formed at one second bond course 716 on this luminescent layer, be formed at one second contact layer 717 on this second bond course, be formed at one first link electrode 719 on this second contact layer, and be formed at one second link electrode 720 on this second surface zone.
See also Fig. 7 and Fig. 8, the manufacture method of light-emitting diode 7 comprises the following step: form one second contact layer 717, one second bond course 716, a luminescent layer 715, one first bond course 714, one first contact layer 713, a transparency conducting layer 721, one second conversion zone 723 successively on one first substrate 718, constitute one the 5th lamination 8; One metallic reflection substrate 710 is set, is formed at one first conversion zone 722 on this metallic reflection substrate, constitute one the 6th lamination 9, as shown in Figure 9; One transparent bonding layer 712 is set, utilizes this transparent bonding layer together the first conversion zone surface combination of second conversion zone of this first lamination surface and the 6th lamination; Remove this first substrate 718, constitute one the 7th lamination 100, as shown in figure 10; The 7th lamination 100 suitably is etched to this transparency conducting layer 721, forms a transparency conducting layer exposed surface area; And on this second contact layer 717 and this transparency conducting layer exposed surface area, form first link electrode 719 and second link electrode 720 respectively.
See also Figure 11, according to the present invention again a preferred embodiment have the bonding reflector light-emitting diode 110, comprise one second substrate 1110, be formed at one first conversion zone 1122 on this substrate, be formed at the tack coat 1112 on this first conversion zone, be formed at one second conversion zone 1123 on this tack coat, be formed at the metallic reflector 1111 on this second conversion zone, be formed at the transparency conducting layer 1121 on this metallic reflector, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 1113 on this first surface zone, be formed at one first bond course 1114 on this first contact layer, be formed at the luminescent layer 1115 on this first bond course, be formed at one second bond course 1116 on this luminescent layer, be formed at one second contact layer 1117 on this second bond course, be formed at one first link electrode 1119 on this second contact layer, and be formed at one second link electrode 1120 on this second surface zone.
See also Figure 11 and Figure 12, the manufacture method of light-emitting diode 110 comprises the following step: form one second contact layer 1117, one second bond course 1116, a luminescent layer 1115, one first bond course 1114, one first contact layer 1113, a transparency conducting layer 1121, a metallic reflector 1111, one second conversion zone 1123 successively on one first substrate 1118, constitute one the 8th lamination 120; One second substrate 1110 is set, is formed at one first conversion zone 1122 on this second substrate, constitute one the 9th lamination 130, as shown in figure 13; One tack coat 1112 is set, utilizes this tack coat that second conversion zone surface of the 8th lamination and first conversion zone of the 9th lamination are combined; Remove this first substrate 1118, constitute 1 the tenth lamination 140, as shown in figure 14; The tenth lamination suitably is etched to this transparency conducting layer 1121, forms one first contact layer exposed surface area; And on this second contact layer 1117 and this first contact layer exposed surface area, form first link electrode 1119 and second link electrode 1120 respectively.
Aforementioned first substrate comprises at least a material that is selected from one group of material that GaP, GaAs or Ge constitute; Aforementioned second substrate comprises and is selected from Si, GaAs, SiC, Al 2O 3, at least a material or other replaceable material in one group of material that glass, GaP, GaAsP or AlGaAs constituted; Aforementioned transparent bonding layer comprises and is selected from polyimides (PI), benzocyclobutane (BCB) or crosses at least a material in one group of material that fluorine cyclobutane (PFCB) constituted; Aforementioned first conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted; Aforementioned second conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted; The aforementioned metal reflection substrate comprises at least a material or other the replaceable material that are selected from one group of material that Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute; Aforementioned first contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP, AlGaInP or AlGaAs constitute; Aforesaid oxides or nitride reflector comprise and are selected from SiN x, SiO 2, Al 2O 3, TiO 2Or at least a material in one group of material that MgO constituted; The aforementioned metal reflector comprises at least a material that is selected from one group of material that In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute; Aforementioned first bond course, luminescent layer and second bond course comprise AlGaInP; Aforementioned second contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP, AlGaInP or AlGaAs constitute; Aforementioned transparency conducting layer comprises and is selected from tin indium oxide, the oxidation at least a material in tin, antimony tin, zinc oxide, zinc-tin oxide, one group of material that Au and Ni constituted.
Though light-emitting diode of the present invention is disclosed in by preferred embodiment, yet scope of the present invention is not limited to above preferred embodiment, should be as the criterion with the scope that claim was defined.Therefore those skilled in the art should be able to do any improvement and adjustment to the present invention not breaking away under claims scope of the present invention and the spirit.

Claims (54)

  1. One kind have the bonding reflector manufacturing method for LED, comprise the following step at least:
    One first substrate is set;
    Forming a LED is stacked on this first substrate;
    Form one second conversion zone on this LED lamination;
    One second substrate is set;
    Form a reflector on this second substrate;
    Form one first conversion zone on this reflector;
    Thereby a transparent bonding layer and this first conversion zone and this second conversion zone heated combine.
  2. One kind have the bonding reflector manufacturing method for LED, comprise the following step at least:
    One first substrate is set;
    Forming a LED is stacked on this first substrate;
    Form one second conversion zone on this LED lamination;
    One metallic reflection substrate is set;
    Form one first conversion zone on this metallic reflection substrate;
    Thereby a transparent bonding layer and this first conversion zone and this second conversion zone heated combine.
  3. One kind have the bonding reflector manufacturing method for LED, comprise the following step at least:
    One first substrate is set;
    On this first substrate, form a LED lamination;
    Form a reflector on this LED lamination;
    Form one second conversion zone on this reflector;
    One second substrate is set;
    Form one first conversion zone on this second substrate;
    Thereby a tack coat and this first conversion zone and this second conversion zone heated combine.
  4. 4. as claim 1,2 or 3 described manufacturing method for LED with bonding reflector, wherein, this first substrate comprises at least a material that is selected from one group of material that GaP, GaAs or Ge constitute.
  5. 5. as claim l or 3 described manufacturing method for LED with bonding reflector, wherein, this second substrate comprises and is selected from Si, GaAs, SiC, Al 2O 3, at least a material in one group of material that glass, quartz, GaP, GaAsP, AlGaAs or metal constituted.
  6. 6. as claim 1 or 3 described manufacturing method for LED with bonding reflector, wherein, this reflector is a metallic reflector.
  7. 7. as claim 1 or 3 described manufacturing method for LED with bonding reflector, wherein, this reflector is oxide or nitride reflector.
  8. 8. the manufacturing method for LED with bonding reflector as claimed in claim 6, wherein, this reflector comprises at least a material that is selected from one group of material that In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  9. 9. the manufacturing method for LED with bonding reflector as claimed in claim 7, wherein, this reflector comprises and is selected from SiN x, SiO 2, Al 2O 3, TiO 2Or at least a material in one group of material that MgO constituted.
  10. 10. the manufacturing method for LED with bonding reflector as claimed in claim 2, wherein, the metal of this metallic reflection substrate comprises at least a material that is selected from one group of material that Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  11. 11. the manufacturing method for LED with bonding reflector as claimed in claim 1 or 2, wherein, this transparent bonding layer comprises and is selected from polyimides, benzocyclobutane or crosses at least a material in one group of material that the fluorine cyclobutane constituted.
  12. 12. as claim 1,2 or 3 described manufacturing method for LED with bonding reflector, wherein, this first conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted.
  13. 13. as claim 1,2 or 3 described manufacturing method for LED with bonding reflector, wherein, this second conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted.
  14. 14. the manufacturing method for LED with bonding reflector as claimed in claim 3, wherein, this tack coat has transparent or opaque feature.
  15. 15. the manufacturing method for LED with bonding reflector as claimed in claim 2 wherein, more is included on this metallic reflection substrate, forms a reflector.
  16. 16. as claim 1,2 or 3 described manufacturing method for LED, wherein, more comprise after the formation LED lamination, on the LED lamination, form a transparency conducting layer with bonding reflector.
  17. 17., wherein, more comprise and remove this first substrate as claim 1,2 or 3 described manufacturing method for LED with bonding reflector.
  18. 18. the manufacturing method for LED with bonding reflector as claimed in claim 16, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide or the one group of material that zinc-tin oxide constituted.
  19. 19. the light-emitting diode with bonding reflector comprises at least:
    One substrate;
    One reflector is formed on this substrate;
    One first conversion zone is formed on this reflector;
    One transparent bonding layer is formed on this first conversion zone;
    One second conversion zone is formed on this transparent bonding layer;
    One LED lamination is formed on this second conversion zone; And
    Electrode.
  20. 20. the light-emitting diode with bonding reflector comprises at least:
    One metallic reflection substrate;
    One first conversion zone is formed on this metallic reflection substrate;
    One transparent bonding layer is formed on this first conversion zone;
    One second conversion zone is formed on this transparent bonding layer;
    One LED lamination is formed on this second conversion zone; And
    Electrode.
  21. 21. the light-emitting diode with bonding reflector comprises at least:
    One substrate;
    One first conversion zone is formed on this substrate;
    One tack coat is formed on this first reflector;
    One second conversion zone is formed on this tack coat;
    One reflector is formed on this second conversion zone;
    One LED lamination is formed on this reflector; And
    Electrode.
  22. 22., wherein, more be included in and form a transparency conducting layer between second conversion zone and the LED lamination as claim 19 or 20 described light-emitting diodes with bonding reflector.
  23. 23. the light-emitting diode with bonding reflector as claimed in claim 21 wherein, more is included in and forms a transparency conducting layer between reflector and the LED lamination.
  24. 24. as claim 22 or 23 described light-emitting diodes with bonding reflector, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the one group of material that zinc-tin oxide constituted.
  25. 25. as claim 19 or 21 described light-emitting diodes with bonding reflector, wherein, this substrate comprises and is selected from Si, GaAs, SiC, Al 2O 3, at least a material in one group of material that glass, quartz, GaP, GaAsP, AlGaAs or metal constituted.
  26. 26. as claim 19 or 21 described light-emitting diodes with bonding reflector, wherein, this reflector is a metallic reflector.
  27. 27. as claim 19 or 21 described light-emitting diodes with bonding reflector, wherein, this reflector is oxide or nitride reflector.
  28. 28. the light-emitting diode with bonding reflector as claimed in claim 26, wherein, this reflector comprises at least a material that is selected from one group of material that In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  29. 29. the light-emitting diode with bonding reflector as claimed in claim 27, wherein, this reflector comprises and is selected from SiN x, SiO 2, Al 2O 3, TiO 2Or at least a material in one group of material that MgO constituted.
  30. 30. the light-emitting diode with bonding reflector as claimed in claim 20, wherein, the metal of this metallic reflection substrate comprises at least a material that is selected from one group of material that Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  31. 31. the light-emitting diode with bonding reflector comprises at least:
    One substrate;
    Be formed at the reflector on this substrate;
    Be formed at one first conversion zone on this reflector;
    Be formed at the transparent bonding layer on this first conversion zone;
    Be formed at one second conversion zone on this transparent bonding layer;
    Be formed at the transparency conducting layer on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone;
    Be formed at one first contact layer on this first surface zone;
    Be formed at one first bond course on this first contact layer;
    Be formed at the luminescent layer on this first bond course;
    Be formed at one second bond course on this luminescent layer;
    Be formed at one second contact layer on this second bond course;
    Be formed at one first link electrode on this second contact layer; And
    Be formed at one second link electrode on this second surface zone.
  32. 32. the light-emitting diode with bonding reflector comprises at least:
    One metallic reflection substrate;
    Be formed at one first conversion zone on this metallic reflection substrate;
    Be formed at the transparent bonding layer on this first conversion zone;
    Be formed at one second conversion zone on this transparent bonding layer;
    Be formed at the transparency conducting layer on this second conversion zone, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone;
    Be formed at one first contact layer on this first surface zone;
    Be formed at one first bond course on this first contact layer;
    Be formed at the luminescent layer on this first bond course;
    Be formed at one second bond course on this luminescent layer;
    Be formed at one second contact layer on this second bond course;
    Be formed at one first link electrode on this second contact layer; And
    Be formed at one second link electrode on this second surface zone.
  33. 33. the light-emitting diode with bonding reflector comprises at least:
    One substrate;
    Be formed at one first conversion zone on this substrate;
    Be formed at the tack coat on this first conversion zone;
    Be formed at one second conversion zone on this tack coat;
    Be formed at the reflector on this second conversion zone;
    Be formed at the transparency conducting layer on this reflector, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone;
    Be formed at one first contact layer on this first surface zone;
    Be formed at one first bond course on this first contact layer;
    Be formed at the luminescent layer on this first bond course;
    Be formed at one second bond course on this luminescent layer;
    Be formed at one second contact layer on this second bond course;
    Be formed at one first link electrode on this second contact layer; And
    Be formed at one second link electrode on this second surface zone.
  34. 34. the light-emitting diode with bonding reflector comprises at least:
    One substrate, wherein, this substrate has upper and lower surface;
    Be formed at one first link electrode of this base lower surface;
    Be formed at the reflector on this upper surface of base plate;
    Be formed at one first conversion zone on this reflector;
    Be formed at the electrically conducting transparent tack coat on this first conversion zone;
    Be formed at one second conversion zone on this electrically conducting transparent tack coat;
    Be formed at the transparency conducting layer on this second conversion zone;
    Be formed at one first contact layer on this transparency conducting layer;
    Be formed at one first bond course on this first contact layer;
    Be formed at the luminescent layer on this first bond course;
    Be formed at one second bond course on this luminescent layer;
    Be formed at one second contact layer on this second bond course; And
    Be formed at one second link electrode on this second contact layer.
  35. 35. as claim 31 or 33 described light-emitting diodes with bonding reflector, wherein, this substrate comprises and is selected from Si, GaAs, SiC, Al 2O 3, at least a material in one group of material that glass, GaP, GaAsP, AlGaAs or metal constituted.
  36. 36. the light-emitting diode with bonding reflector as claimed in claim 32, wherein, this metallic reflection substrate comprises at least a material that is selected from one group of material that Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  37. 37. the light-emitting diode with bonding reflector as claimed in claim 34, wherein, this substrate comprises at least a material that is selected from one group of material that Si, GaAs, SiC, GaP, GaAsP, AlGaAs or metal constitute.
  38. 38. as claim 31,33 or 34 described light-emitting diodes with bonding reflector, wherein, this reflector is a metallic reflector.
  39. 39. as claim 31 or 33 described light-emitting diodes with bonding reflector, wherein, this reflector is oxide or nitride reflector.
  40. 40. the light-emitting diode with bonding reflector as claimed in claim 38, wherein, this reflector comprises at least a material that is selected from one group of material that In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn or AuZn constitute.
  41. 41. the light-emitting diode with bonding reflector as claimed in claim 39, wherein, this reflector comprises and is selected from SiN x, SiO 2, Al 2O 3, TiO 2Or at least a material in one group of material that MgO constituted.
  42. 42. as claim 19,20,31 or 32 described light-emitting diodes with bonding reflector, wherein, this transparent bonding layer comprises and is selected from polyimides (PI), benzocyclobutane (BCB) or crosses at least a material in one group of material that fluorine cyclobutane (PFCB) constituted.
  43. 43. as claim 19,20,21,31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this first conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted.
  44. 44. as claim 19,20,21,31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this second conversion zone comprises and is selected from SiN x, at least a material in one group of material that Ti or Cr constituted.
  45. 45. as claim 21 or 33 described light-emitting diodes with bonding reflector, wherein, this tack coat has transparent or opaque feature.
  46. 46. the light-emitting diode with bonding reflector as claimed in claim 34, wherein, this electrically conducting transparent tack coat comprises at least a material that is selected from one group of material that conductive doped material constituted in intrinsic conducting polymer or the polymer.
  47. 47. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide, zinc-tin oxide, the one group of material that Au and Ni constituted.
  48. 48. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this first contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP, AlGaInP and AlGaAs constitute.
  49. 49. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this first bond course comprises AlGaInP.
  50. 50. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this luminescent layer comprises AlGaInP.
  51. 51. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this second bond course comprises AlGaInP.
  52. 52. as claim 31,32,33 or 34 described light-emitting diodes with bonding reflector, wherein, this second contact layer comprises at least a material that is selected from one group of material that GaP, GaAs, GaAsP, InGaP, AlGaInP and AlGaAs constitute.
  53. 53. as claim 31,32,33 or 34 described light-emitting diodes, wherein can comprise, on this second contact layer, under second link electrode, form a transparency conducting layer with bonding reflector.
  54. 54. the light-emitting diode with bonding reflector as claimed in claim 51, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the one group of material that zinc-tin oxide constituted.
CN 03101507 2003-01-10 2003-01-10 Light-emitting diode with adhered reflecting layer and its making method Expired - Lifetime CN1266779C (en)

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CN100365834C (en) * 2004-08-02 2008-01-30 晶元光电股份有限公司 LED with hot channel bonding layer
CN1734798B (en) * 2004-08-02 2010-04-28 晶元光电股份有限公司 Omnidirectional reflector LED with transparent conductive layer
CN100373640C (en) * 2004-08-02 2008-03-05 晶元光电股份有限公司 LED with bonding layer and making method thereof
CN100409461C (en) * 2004-10-20 2008-08-06 晶元光电股份有限公司 Structure of LED and its mfg method
CN101783377B (en) * 2009-01-20 2011-09-28 晶元光电股份有限公司 Grain grade packaging structure of light-emitting diode
CN103258931B (en) * 2009-04-28 2016-05-04 晶元光电股份有限公司 There is photoelectric cell and the manufacture method thereof of transparent bonding structure

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