CN1889281A - Method for producing GaN base LED by two-step photoetching process - Google Patents
Method for producing GaN base LED by two-step photoetching process Download PDFInfo
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- CN1889281A CN1889281A CNA2006100889961A CN200610088996A CN1889281A CN 1889281 A CN1889281 A CN 1889281A CN A2006100889961 A CNA2006100889961 A CN A2006100889961A CN 200610088996 A CN200610088996 A CN 200610088996A CN 1889281 A CN1889281 A CN 1889281A
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- 238000001259 photo etching Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 238000012360 testing method Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 2
- 239000007772 electrode material Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 33
- 239000010931 gold Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
Two steps photolithography GaN base LED preparation method belongs to optoelectronic device manufacturing technology field. Tradition GaN base LED making method uses six steps photo etching, which wastes electrode material and chemical reagent. Said two steps photo etching process includes utilizing inductively coupled plasma etching out deck structure after first photo etching; after second photo etching protective oxide shell, sputtering metal reflector and N electrode, through thinning down, slicing, splitting, transistor core up side face down bonding, press welding, and packaging, to complete LED manufacture whole technological process.
Description
Technical field:
A kind of preparation method of producing GaN base LED by two-step photoetching belongs to optoelectronic device manufacturing technology field, specifically is the preparation process about semiconductor light-emitting-diode (LED).
Background technology:
GaN based light-emitting diode (Light Emitting Diode, LED) as a kind of opto-electronic device, realized blue light emitting, perfect chromatogram, obtained using widely in colour demonstration and lighting field, and its volume is little, and the life-span is long, antidetonation, cracky not, advantages such as it is fast to start the response time, nuisanceless have won the great attention of national governments and company, and market prospects are more and more broader.
The GaN base LED of conventional method makes and generally comprises following steps:
1. epitaxial growth: the LED structure of on Sapphire Substrate 8, growing successively: n type GaN layer 5, Multiple Quantum Well 7, p type GaN 6,
2. photoetching utilizes inductively coupled plasma to carry out dry etching, is carved into N type GaN5 from p type GaN 6, forms mesa structure;
3. sputter P electrode ohmic contact layer 2 on p type GaN 6;
4. photoetching, splash-proofing sputtering metal reflective mirror 1 on P electrode ohmic contact layer 2;
5. photoetching, sputter N electrode 4 on n type GaN layer 5;
6. photoetching, the thick gold of sputter on N electrode 4 and metal reflective mirror 1;
7. photoetching is at described mesa structure superficial growth protective oxide film 3;
8. the photoetching protective oxide film 3;
9. attenuate, scribing, sliver;
10. tube core flip chip bonding, pressure welding, encapsulation, test.
As can be seen, the conventional method step is various, and wherein shared to six step photoetching, this has not only wasted electrode material and chemical reagent, and has increased the artificial contact in the production process, has improved man-hour and equipment loss.Therefore will improve the reliability of LED, improve its cost performance, it is most important to reduce the production step number.
Summary of the invention:
The present invention proposes the two step optical graving practices of LED, adopt this method can reduce LED multistep process-induced damage accumulation in process of production, economize in raw materials, reduce cost, this method can be applied to GaN base indigo plant, green light LED and corresponding production.Six step photoetching of LED manufacturing process are in the past compared, and the present invention is the manufacture method of a kind of easy LED, have only two step photoetching in manufacturing process, and concrete processing step is as follows:
1. the LED epitaxial slice structure of on substrate 8, growing successively: n type GaN layer 5, Multiple Quantum Well 7, p type GaN 6;
2. sputter P electrode ohmic contact layer 2 on p type GaN 6;
3. photoetching utilizes inductively coupled plasma to carry out dry etching, is carved into N type GaN 5 from P electrode ohmic contact layer 2, forms mesa structure;
4. P electrode ohmic contact layer 2 is carried out alloy;
5. at the superficial growth protective oxide film 3 of mesa structure;
6. photoetching, splash-proofing sputtering metal reflective mirror 1 on P electrode ohmic contact layer 2 is at N type GaN 5 sputter N electrodes 4;
7. attenuate, scribing, sliver;
8. tube core flip chip bonding, pressure welding, encapsulation, test.
The advantage of this method is: uses two-step method and makes LED, shortened technological process, reduced cost, and simple and practical.And with under the test condition, the LED light total radiant power that the inventive method is made is higher than the LED of traditional structure.
Description of drawings
Fig. 1; LED device architecture profile
Reference numeral: 1: metal reflective mirror 2: ohmic contact layer 3: protective oxide film 4:N electrode 5:N-GaN 6:P-GaN 7: Multiple Quantum Well 8: substrate
Embodiment
1.P electrode ohmic contact layer 2 can be metal Ni/Au, also can be other metallic combinations or is nesa coating such as indium tin oxide ITO film etc.The gross thickness of the P electrode ohmic contact layer 2 that Ni/Au metal or other metallic combinations constitute is 50 -200 ; The electrically conducting transparent film thickness is 1000 -4000 .
2. protective oxide film 3 can be SiO2, also can be SiNx etc.Thickness 1000 -5000 .
3. substrate 8 can be a sapphire, or carborundum.
4.P electrode metal reflective mirror 1 and N electrode 4 can be Al/Ti/Au or other metallic combinations, thickness is greater than 2000 .
Embodiment 1:
The step of making GaN base LED is:
(1) epitaxial growth: the LED structure of on Sapphire Substrate 8, growing successively: n type GaN layer 5, InGaN/GaN Multiple Quantum Well 7, p type GaN layer 6;
(2) sputter P electrode ohmic contact layer 2 on p type GaN 6, material is Ni/Au, thickness is 20 /50 ;
(3) photoetching utilizes ICP, and promptly inductively coupled plasma carries out dry etching, is carved into N type GaN 5 from P electrode ohmic contact layer 2, forms mesa structure;
(4) P electrode ohmic contact layer 2 is carried out alloy, alloy condition is: 500 ℃ of temperature, 3 minutes time;
(5) the grow oxide protective layer 3, and material is SiO2,120 ℃ of growth temperatures, thickness 2000 ;
(6) photoetching, splash-proofing sputtering metal reflective mirror 1 on P electrode ohmic contact layer 2, sputter N electrode 4 on N type GaN layer 5, material is Al/Ti/Au, gross thickness is 5000 ;
(7) attenuate, scribing, sliver;
(8) tube core flip chip bonding, pressure welding, encapsulation, test.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.62mW, and the LED light total radiant power of traditional structure is 4.71mW.Two kinds of LED test conditions are all under the 350mA constant current and record.
Embodiment 2
The step of making GaN base LED is:
(1) epitaxial growth: the LED structure of on Sapphire Substrate 8, growing successively: n type GaN layer 5, InGaN/GaN Multiple Quantum Well 7, p type GaN layer 6;
(2) sputter P electrode ohmic contact layer 2 on p type GaN 6, material is Ni/Au, thickness is 20 /50 ;
(3) photoetching utilizes ICP, and promptly inductively coupled plasma carries out dry etching, is carved into N type GaN 5 from P electrode ohmic contact layer 2, forms mesa structure;
(4) P electrode ohmic contact layer 2 is carried out alloy, alloy condition is: 500 ℃ of temperature, 1 minute time;
(5) the grow oxide protective layer 3, and material is SiO2,120 ℃ of growth temperatures, thickness 2000 ;
(6) photoetching, splash-proofing sputtering metal reflective mirror 1 on P electrode ohmic contact layer 2, sputter N electrode 4 on N type GaN layer 5, material is Al/Ti/Au, gross thickness is 5000 ;
(7) attenuate, scribing, sliver;
(8) tube core flip chip bonding, pressure welding, encapsulation, test.Finish the whole technical process that LED makes.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.23mW, and the LED light total radiant power of traditional structure is 4.09mW.Two kinds of LED test conditions are all under the 350mA constant current and record.
Embodiment 3:
The step of making GaN base LED is:
(1) epitaxial growth: the LED structure of on Sapphire Substrate 8, growing successively: n type GaN layer 5, InGaN/GaN Multiple Quantum Well 7, p type GaN layer 6;
(2) sputter P electrode ohmic contact layer 2 on p type GaN 6, material is Ni/Au, thickness is 20 /50 ;
(3) photoetching, dry etching: utilize ICP, promptly inductively coupled plasma carries out dry etching, is carved into N type GaN 5 from P electrode ohmic contact layer 2, forms mesa structure;
(4) P electrode ohmic contact layer 2 is carried out alloy, alloy condition is: 500 ℃ of temperature, 5 minutes time;
(5) the grow oxide protective layer 3, and material is SiO2; 120 ℃ of growth temperatures, thickness 2000 ;
(6) photoetching, splash-proofing sputtering metal reflective mirror 1 on P electrode ohmic contact layer 2, sputter N electrode 4 on N type GaN layer 5, material is Al/Ti/Au, gross thickness is 5000 ;
(7) attenuate, scribing, sliver;
(8) tube core flip chip bonding, pressure welding, encapsulation, test.Finish the whole technical process that LED makes.
With the LED encapsulation back test of a distant place, Hangzhou PMS-50 (PLUS) UV luminous power instrument to two kinds of structures, the LED light total radiant power of structure of the present invention is 4.78mW, and the LED light total radiant power of traditional structure is 4.36mW.Two kinds of LED test conditions are all under the 350mA constant current and record.
Claims (1)
1. the preparation method of a producing GaN base LED by two-step photoetching is characterized in that, comprises following processing step:
1) the LED epitaxial slice structure of on substrate (8), growing successively: n type GaN layer (5), Multiple Quantum Well (7), p type GaN (6);
2) go up sputter P electrode ohmic contact layer (2) at p type GaN (6);
3) photoetching utilizes inductively coupled plasma to carry out dry etching, is carved into N type GaN (5) from P electrode ohmic contact layer (2), forms mesa structure;
4) P electrode ohmic contact layer (2) is carried out alloy;
5) at the superficial growth protective oxide film (3) of mesa structure;
6) photoetching is gone up splash-proofing sputtering metal reflective mirror (1) at P electrode ohmic contact layer (2), at N type GaN (5) sputter N electrode (4);
7) attenuate, scribing, sliver;
8) tube core flip chip bonding, pressure welding, encapsulation, test.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100889961A CN1889281A (en) | 2006-07-28 | 2006-07-28 | Method for producing GaN base LED by two-step photoetching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100889961A CN1889281A (en) | 2006-07-28 | 2006-07-28 | Method for producing GaN base LED by two-step photoetching process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1889281A true CN1889281A (en) | 2007-01-03 |
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|---|---|---|---|
| CNA2006100889961A Pending CN1889281A (en) | 2006-07-28 | 2006-07-28 | Method for producing GaN base LED by two-step photoetching process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010020072A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with silicone protective layer |
| CN103681995A (en) * | 2013-12-10 | 2014-03-26 | 圆融光电科技有限公司 | Led chip preparation method and led chip |
-
2006
- 2006-07-28 CN CNA2006100889961A patent/CN1889281A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010020072A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with silicone protective layer |
| CN103681995A (en) * | 2013-12-10 | 2014-03-26 | 圆融光电科技有限公司 | Led chip preparation method and led chip |
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