CN1884039A - 单层双材料微悬臂梁热隔离焦平面阵列的制作方法 - Google Patents
单层双材料微悬臂梁热隔离焦平面阵列的制作方法 Download PDFInfo
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- CN1884039A CN1884039A CN 200510011988 CN200510011988A CN1884039A CN 1884039 A CN1884039 A CN 1884039A CN 200510011988 CN200510011988 CN 200510011988 CN 200510011988 A CN200510011988 A CN 200510011988A CN 1884039 A CN1884039 A CN 1884039A
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- Prior art keywords
- silicon nitride
- etching
- silicon
- rid
- adopt
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000000463 material Substances 0.000 title claims abstract description 20
- 238000002955 isolation Methods 0.000 title claims abstract description 9
- 239000002356 single layer Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 66
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 58
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000000206 photolithography Methods 0.000 claims abstract description 27
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 26
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 26
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 26
- 239000011651 chromium Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010931 gold Substances 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 15
- 230000007797 corrosion Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000005543 nano-size silicon particle Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005459 micromachining Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
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- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100119882A CN100396593C (zh) | 2005-06-23 | 2005-06-23 | 单层双材料微悬臂梁热隔离焦平面阵列的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100119882A CN100396593C (zh) | 2005-06-23 | 2005-06-23 | 单层双材料微悬臂梁热隔离焦平面阵列的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1884039A true CN1884039A (zh) | 2006-12-27 |
CN100396593C CN100396593C (zh) | 2008-06-25 |
Family
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Family Applications (1)
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CNB2005100119882A Expired - Fee Related CN100396593C (zh) | 2005-06-23 | 2005-06-23 | 单层双材料微悬臂梁热隔离焦平面阵列的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100396593C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276020B (zh) * | 2007-03-28 | 2010-04-14 | 中国科学院微电子研究所 | 微电子机械系统光学解复用器芯片的制备方法 |
CN102757015A (zh) * | 2009-04-24 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 集成互补金属氧化物半导体-微型机电系统器件的制造方法 |
CN109580986A (zh) * | 2018-11-23 | 2019-04-05 | 中国航空工业集团公司西安飞行自动控制研究所 | 一种单晶硅摆片的制作方法 |
CN112079328A (zh) * | 2020-08-20 | 2020-12-15 | 广东工业大学 | 一种t型悬臂梁微结构及其加工方法和应用 |
CN112563124A (zh) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | 一种大面积超薄镂空硬掩模的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2870579B2 (ja) * | 1995-10-16 | 1999-03-17 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
CN1137521C (zh) * | 2001-06-29 | 2004-02-04 | 复旦大学 | 3-5μm硅锗/硅异质结内发射红外探测器及其制备方法 |
CN1156680C (zh) * | 2001-08-24 | 2004-07-07 | 中国科学院电子学研究所 | 以SiNx为梁的微结构谐振梁压力传感器制造方法 |
CN1374249A (zh) * | 2002-04-19 | 2002-10-16 | 清华大学 | 一种弯曲悬臂梁执行器及其制作方法 |
-
2005
- 2005-06-23 CN CNB2005100119882A patent/CN100396593C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276020B (zh) * | 2007-03-28 | 2010-04-14 | 中国科学院微电子研究所 | 微电子机械系统光学解复用器芯片的制备方法 |
CN102757015A (zh) * | 2009-04-24 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 集成互补金属氧化物半导体-微型机电系统器件的制造方法 |
CN102757015B (zh) * | 2009-04-24 | 2015-08-12 | 台湾积体电路制造股份有限公司 | 集成互补金属氧化物半导体-微型机电系统器件的制造方法 |
CN109580986A (zh) * | 2018-11-23 | 2019-04-05 | 中国航空工业集团公司西安飞行自动控制研究所 | 一种单晶硅摆片的制作方法 |
CN112079328A (zh) * | 2020-08-20 | 2020-12-15 | 广东工业大学 | 一种t型悬臂梁微结构及其加工方法和应用 |
CN112563124A (zh) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | 一种大面积超薄镂空硬掩模的制备方法 |
Also Published As
Publication number | Publication date |
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CN100396593C (zh) | 2008-06-25 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HANGZHOU HONGXIN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: CHINESE ACADEMY OF SCIENCES MICROELECTRONICS INSTITUTE Effective date: 20090724 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20090724 Address after: No. 309, Airport Road, Hangzhou, Zhejiang, Jianggan District Patentee after: Hangzhou red core Electronics Co.,Ltd. Address before: Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080625 Termination date: 20160623 |