CN1869810A - Method of correcting defect of graytone mask - Google Patents
Method of correcting defect of graytone mask Download PDFInfo
- Publication number
- CN1869810A CN1869810A CNA2006100922029A CN200610092202A CN1869810A CN 1869810 A CN1869810 A CN 1869810A CN A2006100922029 A CNA2006100922029 A CN A2006100922029A CN 200610092202 A CN200610092202 A CN 200610092202A CN 1869810 A CN1869810 A CN 1869810A
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- Prior art keywords
- gray tone
- gray
- mask
- defective
- tone portion
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A method of correcting a defect of a graytone mask is provided to selectively vary a thickness of a photoresist film by reducing light transmittance, thereby obtaining high correction accuracy. A method of correcting a defect of a graytone mask is characterized in that transmittance of light transmitting a region consisting of a light-shielding layer(1), a light-transmitting layer(2), and light-shielding patterns(3a,3b) having resolution lower than that of an exposure meter using a graytone mask is reduced to correct a defect of a graytone portion(3). If a black defect occurs in the graytone portion, a film thickness corresponding to the entire area of the black defect, some area of the black defect, or an area including the black defect is reduced by etching to obtain graytone effect equal to a normal graytone portion.
Description
The application be that April 1, application number in 2004 are 200410030984.4 the applying date, denomination of invention divides an application for the Chinese invention patent application of " defect correction method of gray mask ".
Technical field
The present invention relates to a kind of defect detecting method of gray tone portion of the gray mask that is used to make thin film transistor for liquid crystal display device substrate etc.
Background technology
In recent years, use in the mask field, just attempting using gray mask to reduce mask piece number (non-patent literature 1) at large LCD.
Herein, gray mask shown in Fig. 3 (1), has light shielding part 1 ", transmittance section 2 " and gray tone portion 3 on transparency carrier ".Gray tone portion 3 " for example be to have formed the large LCD that uses gray mask zone with the following shading graph 3a of the limiting resolution of exposure machine, and with reduce the light transmission capacity that sees through this regional light, the thickness that reduces this regional exposure and selectively changing photoresist is purpose forms.3b is a gray tone portion 3 " the following trickle transmittance section of limiting resolution of exposure machine." the identical film of usually all being made by the same material that adopts chromium and chromium compound etc. with shading graph 3a of thickness forms light shielding part 1." and trickle transmittance section 3b all is the part that does not form the transparency carrier of photomask etc. on transparency carrier in transmittance section 2.
Using the limiting resolution of the large LCD of gray mask with exposure machine, is about 3 μ m for the exposure machine of step-by-step system, is about 4 μ m for the exposure machine of mirror surface projection mode.For this reason, for example, at Fig. 3 (1) gray tone portion 3 " the interval width of transmittance section 3b be set at less than 3 μ m, the line width of the shading graph 3a below the limiting resolution of exposure machine is set at less than 3 μ m." exposure light exposure deficiency as a whole, thereby by this gray tone portion 3 " positive imaging-type photoresist that exposes only remains on the substrate under the state of attenuation at thickness when exposing with exposure machine with above-mentioned large LCD, owing to seen through gray tone portion 3.That is to say, etchant resist is along with the difference of exposure, with the corresponding part of common light shielding part 1 " corresponding part and with gray tone portion 3 ", dissolubility generation at imaging liquid is poor, thereby the etchant resist shape after the video picture, " " for example about 0.3 μ m of corresponding part 3 ', " corresponding part becomes the part 2 ' of no etchant resist to for example about 1.3 μ m of corresponding part 1 '; with gray tone portion 3 with transmittance section 2 shown in Fig. 3 (2), with common light shielding part 1.Then, carry out the 1st etching of processed substrate in the part 2 ' of no etchant resist, use ashing etc. to remove and gray tone portion 3 " etchant resist of corresponding thin part 3 ', and carry out the 2nd etching in this part; thus carry out the operation of 2 pieces of masks in the past with 1 piece of mask, reduced mask piece number.
In addition, gray tone portion for above-mentioned gray mask, the processing of trickle figure is very difficult, and the chip that takes place in manufacturing process etc. has a significant impact, owing to these reasons, taken place the graphic defects formed by thin, thick etc. CD sum of errors residue figure and the shortcoming figure of shading graph 13a etc. (below, the thick of figure and residue graphic defects etc. called black defective, the thin of figure and be short of defective etc. and call white defective).
Therefore, the defective at gray tone portion takes place applies figure adjustment, yet because the figure of gray tone portion is trickle, thereby to be recovered to identical with normal figure be very difficult.In order to address this problem, in patent documentation 1, put down in writing a kind of bearing calibration, this bearing calibration non-restoring becomes and the normal identical shape of figure, and obtains and the correction graph of normogram just as the gray tone effect that waits, thereby carries out the correction of gray tone portion.
[patent documentation 1] spy opens 2002-107913
[non-patent literature 1] monthly magazine FPD Intelligence, p.31-35, in May, 1999
Put down in writing a kind of bearing calibration in above-mentioned patent documentation 1, the laser CVD repair apparatus is used in this bearing calibration, removes defect part, forms afterwards and the photomask figure of normogram just as the gray tone figure that waits, and perhaps forms semi-transparent film.Yet in the former bearing calibration, the problem of existence is, compares with restoring normal figure, and correction is easy, yet transmittance control is difficult.In the method for the latter's the semi-transparent film pattern of formation, the problem that exists is, compares with forming shading graph, and transmittance control is to be relatively easy to, in the formation method of the latter's semi-transparent film pattern, it is relatively easy that the control ratio of transmittance forms the photomask figure.Yet for the laser CVD that uses at patent documentation 1, the beam diameter minimum also has 2 μ m φ, and laser self also has strength distribution at central part and periphery, thereby owing to the intensity distributions of this laser influences the film thickness distribution that produces calbrating film, the transmittance that the result produces calbrating film distributes.And the problem of existence is owing to be with weak energy film forming with the semi-transparent film of laser CVD film forming, thereby with the adaptation of transparency carrier a little less than, and peel off easily owing to cleaning afterwards etc.
Summary of the invention
The present invention proposes in order to address the above problem, and the purpose of this invention is to provide that a kind of ratio is easier to and the bearing calibration of the gray tone portion that correction accuracy is high.
The present invention has following formation.
The defect correction method of (constituting 1) a kind of gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and gray tone portion, this gray tone portion is the zone that has formed the shading graph below the limiting resolution of the exposure machine that uses gray mask, thereby and be purpose with the thickness that the light transmission capacity of the light that reduce to see through above-mentioned zone optionally changes photoresist, said method is characterised in that:
When above-mentioned gray tone portion takes place to deceive defective, by being carried out etching, the Zone Full of above-mentioned black defective or part zone or the zone that comprises black defective reduce thickness, make above-mentioned gray tone portion can reach thickness with the equal gray tone effect of normal gray tone portion with formation, above-mentioned etching is the etching that utilizes focused ion beam.
The defect correction method of (constituting 2) a kind of gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and becomes the zone of the shading graph that has formed below the limiting resolution of the exposure machine that uses gray mask and optionally change the gray tone portion of the thickness of photoresist as purpose with the light transmission capacity that sees through this regional light by minimizing, it is characterized in that:
When white defective takes place in above-mentioned gray tone portion, above-mentioned white defect part part or all or comprise in the zone of above-mentioned white defect part, use the FIB correction method, form and make above-mentioned gray tone portion can reach semi-transparency calbrating film with the equal gray tone effect of normal gray tone portion.
Below, the present invention will be described.
(correction method of black defective)
At first, the correction method according to the black defective of the defect correction method of gray mask of the present invention is described.
In the present invention,, reduce thickness, and, carry out the correction (constituting 1) of gray tone portion by forming semi-transparent film by prune (etching) black defective itself.
Use existing laser CVD repair apparatus, can only carry out removing of film, can not resemble FIB (focused ion beam: reduce thickness Focused Ion Beam).
,,, then reduce thickness certainly herein, and can only carry out ormal weight etching (constituting 2) black defective part selectivity if use FIB gas assisted etch as above-mentioned engraving method.Specifically, use correcting area is scanned, and, can only carry out the ormal weight etching black defective part selectivity only to the mode of necessary position emitting ions bundle.
Therefore, as in the past, remove the defective generation area and there is no need,, just can proofread and correct just as the gray tone portion of the gray tone effect that waits having easily with normogram only by setting etching condition.
And, the Zone Full or the part zone of black defective be arranged or comprise the zone (that is, not only deceive Zone Full or a part of zone of defective, and comprise the shading graph of its periphery) of deceiving defect part in etched zone.That is,, can obtain in the gray tone portion zone and the gray tone effect of normogram just as grade by carrying out etching.
(correction method of white defective)
Below, the correction method according to the white defective of the defect correction method of gray mask of the present invention is described.
In the present invention, at white defect part or comprise in the zone of white defect part, (focused ion beam: Focused Ion Beam) method is carried out film forming (constituting 3) to use FIB.By using the FIB method to carry out film forming, can form the high calbrating film of thickness (transmittance) homogeneity easily.
Same with above-mentioned black defective, also can carry out the only film forming of defective part, this situation is omitted such in the past operation of removing.But, after removing the neighboring area, can carry out film forming.
And there is the Zone Full or the part zone of white defective in the zone of formation semi-transparency calbrating film or comprises the zone of white defect part (that is, not only the Zone Full of white defective or a part are regional, and comprise the zone in its periphery zone).That is,, can obtain in the gray tone portion zone and the gray tone effect of normogram just as grade by carrying out the formation of semi-transparency calbrating film.
Description of drawings
Fig. 1 is used for the synoptic diagram that the summary of FIB device that embodiment is used describes.
Fig. 2 is used for the figure that the defect correction example to embodiment describes.
Fig. 3 is used for figure that gray mask is described, and figure (1) is a partial top view, and figure (2) is a part sectioned view.
Among the figure: 1 ... light shielding part; 2 ... the transmittance section; 3 ... gray tone portion; 3a ... shading graph; 3b ... the transmittance section; 5 ... gray tone portion; 12 ... black defective; 11 ... white defective
Embodiment
The summary of＜FIB device 〉
Fig. 1 is the FIB (focused ion beam: the figure of Zhuan Zhi summary Focused Ion Beam) that expression the present invention uses.As shown in Figure 1, have: Ga takes place
+The ion gun 1 of ion, optical system 2, ejaculation is used for and Ga
+The electron gun 3 of the electronics of ion, and the gas rifle 4 that penetrates pyrene gas.
At timing, at first, on XY objective table 5, place as the photomask 6 that is corrected object, by mobile XY objective table 5, make the correction unit position move to the ion beam irradiation zone, setting comprises the correcting area of proofreading and correct the position.Then, in correcting area ion beam 7, use and detect secondary ion (Cr, the signal of secondary ion detecting device 8 detection rejected regions Si) that will take place this moment.Then, by ion beam 7 via proofreading and correct on the photomask 6 of irradiation optical system to the XY objective table 5.And the beam diameter of ion beam is below the 0.1 μ m φ.
When deceiving defect correction, use the black defective of ion beam 7 etchings.At this moment, use etching with gas rifle 9, simultaneously penetrate α gas (iodine gas), one side is shone ion beam 7, thereby promotes etching, and the damage to glass is eased.In the irradiation area of ion beam, one side is used scanner amplifier 10 scanning correcting areas, and according to signal emission that is detected by above-mentioned secondary ion detecting device 8 or emitting ions bundle not, defect part is deceived in etching.
When white defect correction, one side penetrates 7, one using gases rifles of ion beam and penetrates pyrene gas, thereby pyrene gas is contacted with ion beam 7 and polymerization (chemical reaction) takes place, and piles up carbon film in the irradiation area of ion beam 7.Situation also is like this, and in the irradiation area of ion beam 7, one side is used scanner amplifier 10 scanning correcting areas, and one side forms carbon film according to signal emission that is detected by above-mentioned secondary ion detecting device 8 or emitting ions bundle not at white defect part.
＜bearing calibration 〉
Fig. 2 (1) has represented not have the normal gray tone figure of defective generation, and Fig. 2 (2) has represented the figure that black defective 11 and white defective 12 take place, the figure after Fig. 2 (3) has represented to proofread and correct.
(black defective)
For black defective, correcting area set for cover defective part (shown in the dotted line B zone) fully, (focused ion beam: ion beam Focused Ion Beam) carries out the above-mentioned gas assisted etch to be handled to use above-mentioned FIB.Herein, the illuminate condition of ion beam adopts to make the Cr of defective become semi-transparent film, and the condition that glass portion does not shine ion beam is carried out.Specifically, irradiation energy and time (sweep velocity) by the change ion beam, make the Cr of defective become semi-transparent film.
(white defective)
Defective for the part generation that comprises semi light transmitting part (gray tone portion) and figure, it is white defective, correcting area set for cover disconnection portion (shown in the dotted line W zone) fully, (focused ion beam: ion beam Focused Ion Beam) carries out film forming (utilizing the CVD film forming of FIB) to use above-mentioned FIB.Herein, the illuminate condition of ion beam adopts the condition that makes the film of wanting film forming become semi-transparent film to carry out.Specifically, irradiation energy and time (sweep velocity) by the change ion beam, make the film of wanting film forming become the semi-transparent film of desired transmittance.
And the engraving method of black defective is not limited to said method.
According to the present invention, can provide a kind of ratio to be easier to and the bearing calibration of the gray tone portion that correction accuracy is high.
Claims (7)
1. gray tone mask manufacturing method, this gray mask has: light shielding part, transmittance section and gray tone portion, this gray tone portion is the zone that has formed the shading graph below the limiting resolution of the exposure machine that uses gray mask, thereby and be purpose with the thickness that the light transmission capacity that reduce to see through this regional light optionally changes photoresist, it is characterized in that:
This gray tone mask manufacturing method comprises the correcting process of gray mask, this correcting process is, when above-mentioned gray tone portion takes place to deceive defective, carry out etching by focused ion beam, the thickness that makes the Zone Full or a part of zone of above-mentioned black defective or comprise the zone of black defective reduces, and makes above-mentioned gray tone portion can reach thickness with the equal gray tone effect of normal gray tone portion with formation.
2. a kind of gray tone mask manufacturing method as claimed in claim 1 is characterized in that:
Do not remove the black defective that results from above-mentioned gray tone portion, and use this etching to reduce thickness, thereby proofread and correct this defective.
3. a kind of gray tone mask manufacturing method as claimed in claim 2 is characterized in that:
To gray mask, by setting correcting area, carry out ion-beam scanning in this setting regions and detect defective locations, and then carry out etching by the irradiation ion beam as inspected object.
4. gray tone mask manufacturing method, this gray mask has: light shielding part; The transmittance section; And gray tone portion, this gray tone portion is the zone that has formed the shading graph below the limiting resolution of the exposure machine that uses gray mask, thereby and be purpose with the thickness that the light transmission capacity that reduce to see through this regional light optionally changes photoresist, it is characterized in that:
When white defective takes place in above-mentioned gray tone portion, above-mentioned white defect part part or all or comprise in the zone of above-mentioned white defective, use focused ion beam to form to make above-mentioned gray tone portion can reach semi-transparency calbrating film with the equal gray tone effect of normal gray tone portion.
5. a kind of gray tone mask manufacturing method as claimed in claim 4 is characterized in that:
Do not remove the white defective that results from above-mentioned gray tone portion, form this semi-transparency film.
6. a kind of gray tone mask manufacturing method as claimed in claim 5 is characterized in that:
To gray mask, by setting correcting area, carry out ion-beam scanning in this setting regions and detect defective locations, and then carry out film forming by the irradiation ion beam as inspected object.
7. manufacturing method of film transistor base plate that is used for liquid crystal indicator is characterized in that:
Use gray mask and the exposure machine made by each described manufacture method in the claim 1 to 6 to make the thin film transistor base plate that this is used for liquid crystal indicator simultaneously.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP98551/2003 | 2003-04-01 | ||
| JP2003098551A JP3993125B2 (en) | 2003-04-01 | 2003-04-01 | Gray tone mask defect correction method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100309844A Division CN1284043C (en) | 2003-04-01 | 2004-04-01 | Defect correcting method of gray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1869810A true CN1869810A (en) | 2006-11-29 |
Family
ID=33463294
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100922029A Pending CN1869810A (en) | 2003-04-01 | 2004-04-01 | Method of correcting defect of graytone mask |
| CNB2004100309844A Expired - Fee Related CN1284043C (en) | 2003-04-01 | 2004-04-01 | Defect correcting method of gray mask |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100309844A Expired - Fee Related CN1284043C (en) | 2003-04-01 | 2004-04-01 | Defect correcting method of gray mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3993125B2 (en) |
| KR (1) | KR20040088403A (en) |
| CN (2) | CN1869810A (en) |
| TW (1) | TWI278024B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111258171A (en) * | 2020-01-21 | 2020-06-09 | 中国科学院微电子研究所 | Novel mask plate for manufacturing display panel and preparation method thereof |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4559921B2 (en) * | 2005-06-20 | 2010-10-13 | エスアイアイ・ナノテクノロジー株式会社 | Gray tone pattern film defect correction method |
| TWI388923B (en) * | 2006-02-02 | 2013-03-11 | Hoya Corp | Defect repairing method for a gray tone mask and gray tone mask |
| JP5036349B2 (en) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask manufacturing method |
| JP5102912B2 (en) * | 2007-03-31 | 2012-12-19 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, and pattern transfer method |
| KR100930382B1 (en) | 2007-05-15 | 2009-12-08 | 주식회사 하이닉스반도체 | How to fix pattern defects in photomask |
| JP5057866B2 (en) * | 2007-07-03 | 2012-10-24 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method |
| JP2009020312A (en) * | 2007-07-12 | 2009-01-29 | Hoya Corp | Method for correcting defect in gray tone mask, method for manufacturing gray tone mask, gray tone mask, and method for transferring pattern |
| TWI446105B (en) * | 2007-07-23 | 2014-07-21 | Hoya Corp | Method of manufacturing a photomask, method of transferring a pattern, photomask and database |
| CN102402122B (en) * | 2010-09-07 | 2013-09-18 | 无锡华润上华半导体有限公司 | Mask aligner light leakage detection method and system |
| CN102645839B (en) * | 2011-06-15 | 2013-11-27 | 北京京东方光电科技有限公司 | Mask plate and manufacturing method thereof |
| JP6076593B2 (en) * | 2011-09-30 | 2017-02-08 | Hoya株式会社 | Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, pattern transfer method, and thin-film transistor manufacturing method |
| JP6139826B2 (en) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | Photomask, pattern transfer method, and flat panel display manufacturing method |
| JP6081716B2 (en) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | Photomask, pattern transfer method, and flat panel display manufacturing method |
| CN104409418B (en) * | 2014-11-13 | 2018-02-13 | 京东方科技集团股份有限公司 | A kind of thin-film transistor array base-plate and preparation method thereof, display device |
| DE102017203841A1 (en) * | 2017-03-08 | 2018-09-13 | Carl Zeiss Smt Gmbh | Method and apparatus for determining a repair mold for processing a defect of a photolithographic mask |
| CN107807493B (en) * | 2017-09-28 | 2020-08-07 | 京东方科技集团股份有限公司 | Mask plate and exposure equipment |
| CN109212892A (en) * | 2018-09-30 | 2019-01-15 | 惠科股份有限公司 | A kind of light shield and its manufacturing method thereof |
| JP7437959B2 (en) * | 2019-03-07 | 2024-02-26 | Hoya株式会社 | Modified photomask and display device manufacturing method |
| CN111225509B (en) * | 2019-12-06 | 2021-08-06 | 中国电子科技集团公司第四十三研究所 | Etching method |
| CN111474822B (en) * | 2020-05-19 | 2021-09-17 | 中国科学院光电技术研究所 | Method for quickly correcting uniformity of optical substrate based on three-dimensional photoresist mask |
-
2003
- 2003-04-01 JP JP2003098551A patent/JP3993125B2/en not_active Expired - Lifetime
-
2004
- 2004-04-01 CN CNA2006100922029A patent/CN1869810A/en active Pending
- 2004-04-01 CN CNB2004100309844A patent/CN1284043C/en not_active Expired - Fee Related
- 2004-04-01 TW TW093109050A patent/TWI278024B/en active
- 2004-04-01 KR KR1020040022660A patent/KR20040088403A/en active Search and Examination
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111258171A (en) * | 2020-01-21 | 2020-06-09 | 中国科学院微电子研究所 | Novel mask plate for manufacturing display panel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200425294A (en) | 2004-11-16 |
| CN1284043C (en) | 2006-11-08 |
| JP2004309515A (en) | 2004-11-04 |
| KR20040088403A (en) | 2004-10-16 |
| TWI278024B (en) | 2007-04-01 |
| JP3993125B2 (en) | 2007-10-17 |
| CN1534366A (en) | 2004-10-06 |
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