JP2004309515A - Method for correcting defect in gray tone mask - Google Patents

Method for correcting defect in gray tone mask Download PDF

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JP2004309515A
JP2004309515A JP2003098551A JP2003098551A JP2004309515A JP 2004309515 A JP2004309515 A JP 2004309515A JP 2003098551 A JP2003098551 A JP 2003098551A JP 2003098551 A JP2003098551 A JP 2003098551A JP 2004309515 A JP2004309515 A JP 2004309515A
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gray
tone
defect
light
gray tone
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JP3993125B2 (en
JP2004309515A5 (en
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Kenji Nakayama
憲治 中山
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Hoya Corp
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Hoya Corp
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Priority to JP2003098551A priority Critical patent/JP3993125B2/en
Priority to CNB2004100309844A priority patent/CN1284043C/en
Priority to CNA2006100922029A priority patent/CN1869810A/en
Priority to KR1020040022660A priority patent/KR20040088403A/en
Priority to TW093109050A priority patent/TWI278024B/en
Publication of JP2004309515A publication Critical patent/JP2004309515A/en
Publication of JP2004309515A5 publication Critical patent/JP2004309515A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for relatively easily correcting a gray tone part with high correction accuracy. <P>SOLUTION: The method aims to correct a defect in a gray tone part 3 of a gray tone mask having: a light shielding part 1; a light transmitting part 2; and the gray tone part 3 which is a region where a light shielding pattern (3a, 3b) finer than the resolution limit of an exposure machine using the gray tone mask is formed and which decreases the quantity of light transmitting through the region to selectively vary the film thickness of a photoresist. When a black defect is produced in the gray tone part, the film thickness of the gray tone part is decreased by etching the gray tone part to the thickness which brings a gray tone effect almost equal to that of the normal gray tone part. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、液晶表示装置用薄膜トランジスタ基板等を製造するためのグレートーンマスクの、グレートーン部の欠陥検査方法に関する。
【０００２】
【従来の技術】
近年、大型ＬＣＤ用マスクの分野において、グレートーンマスクを用いてマスク枚数を削減する試みがなされている（非特許文献１）。
ここで、グレートーンマスクは、図３（１）に示すように、透明基板上に、遮光部１と、透過部２と、グレートーン部３とを有する。グレートーン部３は、例えば、グレートーンマスクを使用する大型ＬＣＤ用露光機の解像限界以下の遮光パターン３ａを形成した領域であって、この領域を透過する光の透過量を低減しこの領域による照射量を低減してフォトレジストの膜厚を選択的に変えることを目的として形成される。３ｂはグレートーン部３における露光機の解像限界以下の微細透過部である。遮光部１と遮光パターン３ａはともにクロムやクロム化合物等の同じ材料からなる同じ厚さの膜から通常形成されている。透過部２と微細透過部３ｂはともに、透明基板上において遮光膜等が形成されていない透明基板の部分である。
グレートーンマスクを使用する大型ＬＣＤ用露光機の解像限界は、ステッパ方式の露光機で約３μｍ、ミラープロジェクション方式の露光機で約４μｍである。このため、例えば、図３（１）でグレートーン部３における透過部３ｂのスペース幅を３μｍ未満、露光機の解像限界以下の遮光パターン３ａのライン幅を３μｍ未満とする。上記大型ＬＣＤ用露光機で露光した場合、グレートーン部３を通過した露光光は全体として露光量が足りなくなるため、このグレートーン部３を介して露光したポジ型フォトレジストは膜厚が薄くなるだけで基板上に残る。つまり、レジストは露光量の違いによって通常の遮光部１に対応する部分とグレートーン部３に対応する部分で現像液に対する溶解性に差ができるため、現像後のレジスト形状は、図３（２）に示すように、通常の遮光部１に対応する部分１’が例えば約１．３μｍ、グレートーン部３に対応する部分３’が例えば約０．３μｍ、透過部２に対応する部分はレジストのない部分２’となる。そして、レジストのない部分２’で被加工基板の第１のエッチングを行い、グレートーン部３に対応する薄い部分３’のレジストをアッシング等によって除去しこの部分で第２のエッチングを行うことによって、１枚のマスクで従来のマスク２枚分の工程を行い、マスク枚数を削減する。
【０００３】
ところで、上記のようなグレートーンマスクにおけるグレートーン部は、微細パターンの加工が容易ではないことや、製造工程中に発生するごみなどが大きく影響してしまうことなどの理由から、遮光パターン１３ａの細り、太りなどのＣＤエラーや余剰パターンや欠落パターンからなるパターン欠陥など（以下、パターンの太りや余剰パターン欠陥等を、黒欠陥と称し、パターンの細りや欠落欠陥等を白欠陥と称す）が発生してしまう。
そこで、グレートーン部に発生した欠陥については、パターン修正が施されるが、グレートーン部のパターンが微細であるために、正常パターンと同じように復元することは非常に困難であった。この問題を解決するために、正常パターンと同じ形状を復元せずに、正常パターンと同等のグレートーン効果が得られるような修正パターンを形成することにより、グレートーン部の修正を行うことが、特許文献１に記載されている。
【０００４】
【特許文献１】特開２００２−１０７９１３
【非特許文献１】月刊ＦＰＤ Ｉｎｔｅｌｌｉｇｅｎｃｅ、ｐ．３１−３５、１９９９年５月
【０００５】
【発明が解決しようとする課題】
上記特許文献１では、レーザＣＶＤリペア装置を用い、欠陥部分を除去してから、正常パターンと同等のグレートーンパターンとなるような遮光膜パターンの形成、又は半透過膜の形成する修正方法が記載されている。しかしながら、前者の修正方法では、正常パターンを復元するよりは、修正が容易となったが、透過率の制御するのが難しいという課題があった。後者の半透過膜パターンを形成する方法では、遮光パターンを形成するより透過率制御が比較的容易であるが、特許文献１で使用しているレーザＣＶＤでは、ビーム径が最小でも２μｍφ程度であり、かつレーザ自身も中心部と周辺部で強弱分布を持っているため、そのレーザの強度分布の影響で修正膜の膜厚分布が生じる結果修正膜の透過率分布が生じてしまうという課題があった。さらに、レーザＣＶＤで成膜された半透過膜は、弱いエネルギーで成膜するため、透明基板との密着性が弱く、その後の洗浄等で剥がれやすいという課題があった。
【０００６】
本発明は、上記問題点を解決するためになされたものであり、比較的容易に、修正精度の高いグレートーン部の修正方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
本発明は以下の構成を有する。
（構成１） 遮光部と、透光部と、グレートーンマスクを使用する露光機の解像限界以下の遮光パターンを形成した領域であってこの領域を透過する光の透過量を低減してフォトレジストの膜厚を選択的に変えることを目的とするグレートーン部とを有するグレートーンマスクにおけるグレートーン部の欠陥を修正する、グレートーンマスクの欠陥修正方法において、
前記グレートーン部に黒欠陥が発生した場合、前記黒欠陥の全域又は一部の領域、或いは黒欠陥を含む領域を、前記グレートーン部が正常なグレートーン部と同等なグレートーン効果が得られるような膜厚となるように、エッチングにより膜厚を低減させることを特徴とするグレートーンマスクの欠陥修正方法。
（構成２） 前記エッチングが、ＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）によるエッチングであることを特徴とする請求項１に記載のグレートーンマスクの欠陥修正方法。
（構成３） 遮光部と、透光部と、グレートーンマスクを使用する露光機の解像限界以下の遮光パターンを形成した領域であってこの領域を透過する光の透過量を低減してフォトレジストの膜厚を選択的に変えることを目的とするグレートーン部とを有するグレートーンマスクにおけるグレートーン部の欠陥を修正する、グレートーンマスクの欠陥修正方法において、
前記グレートーン部白欠陥が発生した場合、前記白欠陥部分の一部又は全部、或いは前記白欠陥部分を含む領域に、ＦＩＢ修正法により、前記グレートーン部が正常なグレートーン部と同等なグレートーン効果が得られるような半透過性修正膜を形成することを特徴とするグレートーンマスクの欠陥修正方法。
【０００８】
以下、本発明について説明する。
（黒欠陥の修正法）
まず、本発明のグレートーンマスクの欠陥修正方法による黒欠陥の修正法について説明する。
本発明では、黒欠陥そのものを、削る（エッチング）して、膜厚を低減することにより、半透過膜を形成することによって、グレートーン部の修正を行う（構成１）。
従来のレーザＣＶＤリペア装置では、膜の除去しか行うことができず、ＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）のように膜厚を低減させることは不可能であった。
ここで、前記エッチングの方法として、ＦＩＢガスアシストエッチングを用いれば、膜厚を低減させることはもちろん、黒欠陥部のみを選択的に所定量エッチングすることが可能となる（構成２）。具体的には、修正エリアをスキャンさせて、必要な場所のみビームをオンにする方式によって、黒欠陥部のみを選択的に所定量エッチングすることが可能となる。
そのため、従来のように、欠陥発生エリアを除去する必要はなく、エッチング条件を設定するだけで、容易に正常パターンと同等のグレートーン効果を有するグレートーン部の修正が可能となる。
尚、エッチングする領域は、黒欠陥の全域又は一部の領域、或いは黒欠陥部分を含む領域（即ち、黒欠陥の全域又は一部の領域のみならず、その周辺部の遮光パターンを含む領域）がある。即ち、エッチングを行ったことで、グレートーン部領域で正常パターンと同等のグレートーン効果を奏するようになればよい。
【０００９】
（白欠陥の修正法）
次に、本発明のグレートーンマスクの欠陥修正方法による白欠陥の修正法について説明する。
本発明では、白欠陥部分又は白欠陥部分を含む領域に、ＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）法を用いて成膜する（構成３）。ＦＩＢ法を用いた成膜を行うことにより、膜厚（透過率）均一性の高い修正膜を容易に形成することが可能となる。
上記の黒欠陥同様、欠陥部のみの成膜も可能であり、その場合は従来のような除去工程が省ける。但し、周辺領域を除去してから、成膜してもよい。
尚、半透過性修正膜を形成する領域は、白欠陥の全域又は一部の領域、或いは白欠陥部分を含む領域（即ち、白欠陥の全域又は一部の領域のみならず、その周辺部の領域を含む領域）がある。即ち、半透過性修正膜の形成を行ったことで、グレートーン部領域で正常パターンと同等のグレートーン効果を奏するようになればよい。
【００１０】
【発明の実施の形態】
＜ＦＩＢ装置の概要＞
図１は、本発明で使用したＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）装置の概要を示すものである。図１に示されるように、Ｇａ＋イオンを発生させるイオン源１と、光学系２と、Ｇａ＋イオンを中和するための電子を放出する電子銃３と、ピレンガスを放出させるガス銃４とを有する。
修正する際には、まず、ＸＹステージ５上に被修正対象物であるフォトマスク６を載置し、ＸＹステージ５を移動させることにより修正箇所をイオンビーム照射領域に移動し、修正箇所を含む修正領域を設定する。次に、修正領域にイオンビーム７を走査し、この際に発生する二次イオン（Ｃｒ、Ｓｉ）を検出する二次イオン検出器８で欠陥箇所の信号を検出する。そして、イオンビーム７が、光学系を介して、ＸＹステージ５上のフォトマスク６に照射されることによって修正が行われる。尚、イオンビームのビーム径は、０．１μｍφ以下である。
黒欠陥修正の場合は、イオンビーム７により黒欠陥をエッチングする。この際、エッチング用ガス銃９により、αガス（ヨウ素ガス）を放出しながらイオンビーム７を照射することによって、エッチングが促進され、さらにガラスへのダメージが緩和される。イオンビームの照射領域は、スキャンアンプ１０により修正領域を走査しながら、前述の二次イオン検出器８で検出された信号に基づき、黒欠陥部分がエッチングされるように、ビームがオン・オフされる。
白欠陥修正の場合は、イオンビーム７を放出させながら、ピレンガスをガス銃により放出させることによって、ピレンガスがイオンビーム７に接触して重合（化学反応）し、イオンビーム７の照射領域にカーボン膜を堆積する。この場合も、イオンビーム７の照射領域は、スキャンアンプ１０により修正領域を走査しながら、前述の二次イオン検出器８で検出された信号に基づき、白欠陥部分にカーボン膜が形成されるように、ビームがオン・オフされる。
【００１１】
＜修正方法＞
図２（１）は欠陥の発生していない正常なグレートーンパターン、図２（２）は黒欠陥１１及び白欠陥１２が発生したパターン、図２（３）は修正後のパタ−ン、をそれぞれ示す。
【００１２】
（黒欠陥）
黒欠陥については、欠陥部を完全に覆うように修正エリアを設定し（点線Ｂで示したエリア）、上述したＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）によるイオンビームにて上述したガスアシストエッチング処理を行なう。ここで、ビームの照射条件は、欠陥のＣｒが半透過膜になり、ガラス部はビームを照射しない条件にて行なうものとする。具体的には、ビームの照射エネルギーと時間（スキャンスピード）を変更することによって、欠陥のＣｒが半透過膜になるようにする。
【００１３】
（白欠陥）
半透過部（グレー部）を含む、パターンの一部に発生した欠陥について、白欠陥については、断線部を完全に覆うように修正エリアを設定し（点線Ｗで示したエリア）、上述したＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）によるイオンビームにて成膜（ＦＩＢによるＣＶＤ成膜）を行なう。ここで、ビームの照射条件は、成膜する膜が半透過膜になるような条件で行なうものとする。具体的には、ビームの照射エネルギーと時間（スキャンスピード）を変更することによって、成膜する膜が所望の透過率の半透過膜になるようにする。
【００１４】
尚、黒欠陥のエッチング手法は、上記手法に限られるものではない。
【００１５】
【発明の効果】
本発明によれば、比較的容易に、修正精度の高いグレートーン部の修正方法を提供することができた。
【図面の簡単な説明】
【図１】実施の形態で使用したＦＩＢ装置の概要を説明するための模式図である。
【図２】実施の形態における欠陥修正の例を説明するための図である。
【図３】グレートーンマスクを説明するための図であり、（１）は部分平面図、（２）は部分断面図である。
【符号の説明】
１ 遮光部
２ 透過部
３ グレートーン部
３ａ 遮光パターン
３ｂ 透過部
５ グレートーン部
１２ 黒欠陥
１１ 白欠陥[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for inspecting a gray-tone portion of a gray-tone mask for manufacturing a thin film transistor substrate for a liquid crystal display device.
[0002]
[Prior art]
In recent years, in the field of large-size LCD masks, attempts have been made to reduce the number of masks using a gray-tone mask (Non-Patent Document 1).
Here, as shown in FIG. 3A, the gray-tone mask has a light-shielding portion 1, a transmission portion 2, and a gray-tone portion 3 on a transparent substrate. The gray-tone portion 3 is, for example, an area where a light-shielding pattern 3a having a resolution equal to or less than the resolution limit of a large-sized LCD exposure device using a gray-tone mask is formed. It is formed for the purpose of selectively changing the film thickness of the photoresist by reducing the irradiation amount of the photoresist. Reference numeral 3b denotes a fine transmission portion of the gray tone portion 3 which is lower than the resolution limit of the exposure machine. Both the light-shielding portion 1 and the light-shielding pattern 3a are usually formed from films of the same thickness made of the same material such as chromium or a chromium compound. Both the transmission part 2 and the fine transmission part 3b are parts of the transparent substrate on which no light-shielding film or the like is formed on the transparent substrate.
The resolution limit of a large LCD exposure machine using a gray-tone mask is about 3 μm for a stepper type exposure machine and about 4 μm for a mirror projection type exposure machine. For this reason, for example, in FIG. 3A, the space width of the transmission part 3b in the gray-tone part 3 is less than 3 μm, and the line width of the light-shielding pattern 3a that is equal to or less than the resolution limit of the exposure machine is less than 3 μm. When the exposure is performed by the above-described large-sized LCD exposure device, the exposure light passing through the gray tone portion 3 has a shortage of exposure amount as a whole, so that the positive photoresist exposed through the gray tone portion 3 has a small film thickness. Just remain on the substrate. In other words, the resist has a difference in solubility in the developing solution between the portion corresponding to the normal light shielding portion 1 and the portion corresponding to the gray tone portion 3 due to the difference in the exposure amount. As shown in FIG. 1), the portion 1 'corresponding to the normal light shielding portion 1 is, for example, about 1.3 μm, the portion 3' corresponding to the gray tone portion 3 is, for example, about 0.3 μm, and the portion corresponding to the transmission portion 2 is a resist. There is no portion 2 '. Then, the substrate to be processed is subjected to the first etching in the portion 2 ′ without the resist, the resist in the thin portion 3 ′ corresponding to the gray tone portion 3 is removed by ashing or the like, and the second etching is performed in this portion. (1) The process for two conventional masks is performed with one mask to reduce the number of masks.
[0003]
By the way, the gray-tone portion in the above-described gray-tone mask has a light-shielding pattern 13a because the processing of a fine pattern is not easy and dust generated during a manufacturing process greatly affects the gray-tone portion. CD errors such as thinning and thickening, and pattern defects composed of surplus patterns and missing patterns (hereinafter, pattern thickening and excessive pattern defects are called black defects, and thinning and missing defects of patterns are called white defects). Will occur.
Therefore, a defect generated in the gray tone portion is subjected to pattern correction, but it is very difficult to restore the defect in the same manner as a normal pattern because the pattern in the gray tone portion is fine. In order to solve this problem, it is possible to correct the graytone portion by forming a correction pattern that can obtain a graytone effect equivalent to the normal pattern without restoring the same shape as the normal pattern, It is described in Patent Document 1.
[0004]
[Patent Document 1] JP-A-2002-107913
[Non-Patent Document 1] Monthly FPD Intelligence, p. 31-35, May 1999
[Problems to be solved by the invention]
Patent Document 1 describes a repair method of forming a light-shielding film pattern or forming a semi-transmissive film so as to obtain a gray-tone pattern equivalent to a normal pattern after removing a defective portion using a laser CVD repair device. Have been. However, in the former correction method, although the correction is easier than the restoration of the normal pattern, there is a problem that it is difficult to control the transmittance. In the latter method of forming a semi-transmissive film pattern, it is relatively easy to control the transmittance than by forming a light-shielding pattern. However, in the laser CVD used in Patent Document 1, the beam diameter is at least about 2 μmφ. In addition, since the laser itself has a strong and weak distribution in the central portion and the peripheral portion, there is a problem that the film thickness distribution of the correction film is generated due to the influence of the laser intensity distribution, and as a result, the transmittance distribution of the correction film is generated. Was. Furthermore, since the semi-transmissive film formed by laser CVD is formed with weak energy, there is a problem that adhesion to a transparent substrate is weak, and the semi-permeable film is easily peeled off by subsequent washing or the like.
[0006]
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for correcting a graytone portion with high correction accuracy relatively easily.
[0007]
[Means for Solving the Problems]
The present invention has the following configuration.
(Structure 1) A region in which a light-shielding portion, a light-transmitting portion, and a light-shielding pattern less than the resolution limit of an exposure device using a gray-tone mask are formed, and the amount of light transmitted through this region is reduced to reduce the amount of light. In a method for correcting a defect of a gray-tone portion in a gray-tone portion having a gray-tone portion having a purpose of selectively changing a film thickness of a resist,
When a black defect occurs in the gray-tone portion, a gray-tone effect equivalent to that of a normal gray-tone portion can be obtained in the entire or partial region of the black defect or in a region including the black defect. A method for correcting a defect of a gray-tone mask, characterized in that the film thickness is reduced by etching so as to obtain such a film thickness.
(Structure 2) The method of claim 1, wherein the etching is etching by FIB (Focused Ion Beam).
(Structure 3) A region in which a light-shielding portion, a light-transmitting portion, and a light-shielding pattern less than the resolution limit of an exposure machine using a gray-tone mask are formed, and the amount of light transmitted through this region is reduced to reduce In a method for correcting a defect of a gray-tone portion in a gray-tone portion having a gray-tone portion having a purpose of selectively changing a film thickness of a resist,
When the gray-tone portion white defect occurs, a part of or the entirety of the white defect portion or an area including the white defect portion is subjected to FIB correction so that the gray-tone portion has a gray equivalent to a normal gray-tone portion. A method for correcting a defect in a gray-tone mask, comprising forming a semi-transparent correction film capable of obtaining a tone effect.
[0008]
Hereinafter, the present invention will be described.
(Method of correcting black defects)
First, a method for correcting a black defect by the method for correcting a gray-tone mask of the present invention will be described.
In the present invention, the gray tone portion is corrected by shaving (etching) the black defect itself and reducing the film thickness to form a semi-transmissive film (Configuration 1).
In the conventional laser CVD repair apparatus, only the film can be removed, and it is impossible to reduce the film thickness unlike FIB (Focused Ion Beam).
Here, if FIB gas assisted etching is used as the etching method, not only the film thickness can be reduced, but also only the black defect portion can be selectively etched by a predetermined amount (Configuration 2). More specifically, a method in which the correction area is scanned and the beam is turned on only at a necessary place can selectively etch only a black defect portion by a predetermined amount.
Therefore, unlike the related art, it is not necessary to remove the defect generation area, and the gray tone portion having the same gray tone effect as the normal pattern can be easily corrected only by setting the etching conditions.
The region to be etched is the whole or a part of the black defect, or a region including the black defect part (that is, not only the whole or part of the black defect but also a region including the light-shielding pattern in the periphery thereof). There is. That is, it is only necessary that the etching achieves the same gray tone effect as the normal pattern in the gray tone portion region.
[0009]
(Method of correcting white defects)
Next, a method for correcting a white defect by the method for correcting a gray-tone mask of the present invention will be described.
In the present invention, a film is formed on a white defect portion or a region including the white defect portion by using a focused ion beam (FIB) method (Configuration 3). By performing film formation using the FIB method, it is possible to easily form a correction film having high uniformity in film thickness (transmittance).
Similarly to the above-described black defect, it is also possible to form a film only at the defective portion. In this case, the conventional removal step can be omitted. However, the film may be formed after the peripheral region is removed.
The area where the semi-transmissive correction film is formed may be the entire area or a part of the white defect, or the area including the white defect part (that is, not only the entire area or a part of the white defect, but also the peripheral part thereof). Region including the region). In other words, the formation of the semi-transmissive correction film may provide a gray-tone effect equivalent to that of the normal pattern in the gray-tone portion region.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
<Overview of FIB device>
FIG. 1 shows an outline of an FIB (Focused Ion Beam) apparatus used in the present invention. As shown in FIG. 1, an ion source 1 for generating Ga + ions, an optical system 2, an electron gun 3 for emitting electrons for neutralizing Ga + ions, and a gas gun 4 for emitting pyrene gas. Having.
At the time of correction, first, a photomask 6 which is an object to be corrected is placed on the XY stage 5, and the XY stage 5 is moved to move the corrected portion to the ion beam irradiation area, and includes the corrected portion. Set the correction area. Next, the ion beam 7 is scanned over the repair area, and a signal of a defective portion is detected by a secondary ion detector 8 which detects secondary ions (Cr, Si) generated at this time. Then, the correction is performed by irradiating the photomask 6 on the XY stage 5 with the ion beam 7 via the optical system. Note that the beam diameter of the ion beam is 0.1 μmφ or less.
In the case of correcting a black defect, the black defect is etched by the ion beam 7. At this time, the etching is accelerated by irradiating the ion beam 7 while emitting the α gas (iodine gas) by the etching gas gun 9, and the damage to the glass is further reduced. The irradiation area of the ion beam is turned on / off so that the black defect is etched based on the signal detected by the secondary ion detector 8 while scanning the correction area by the scan amplifier 10. You.
In the case of correcting a white defect, the pyrene gas is released by a gas gun while the ion beam 7 is being emitted, so that the pyrene gas comes into contact with the ion beam 7 to be polymerized (chemical reaction), and the carbon film is irradiated on the irradiation area of the ion beam 7. Is deposited. Also in this case, the irradiation region of the ion beam 7 scans the correction region by the scan amplifier 10 so that the carbon film is formed on the white defect portion based on the signal detected by the secondary ion detector 8 described above. Next, the beam is turned on and off.
[0011]
<How to fix>
FIG. 2A shows a normal gray tone pattern in which no defect occurs, FIG. 2B shows a pattern in which a black defect 11 and a white defect 12 occur, and FIG. 2C shows a pattern after correction. Shown respectively.
[0012]
(Black defect)
For a black defect, a repair area is set so as to completely cover the defective portion (the area indicated by the dotted line B), and the above-described gas-assisted etching process is performed using an ion beam by the above-described FIB (Focused Ion Beam). Here, the beam irradiation conditions are such that the defect Cr becomes a semi-permeable film and the glass portion is not irradiated with the beam. Specifically, by changing the irradiation energy of the beam and the time (scan speed), Cr of the defect becomes a semi-transmissive film.
[0013]
(White defect)
For a defect that occurred in a part of the pattern including a semi-transmissive part (gray part), for a white defect, a correction area is set so as to completely cover the broken part (an area indicated by a dotted line W), and the above-described FIB Film formation (CVD film formation by FIB) is performed with an ion beam by (Focused Ion Beam). Here, the beam irradiation is performed under such conditions that the film to be formed becomes a semi-transmissive film. Specifically, by changing the irradiation energy of the beam and the time (scan speed), the film to be formed is a semi-transmissive film having a desired transmittance.
[0014]
In addition, the etching method of the black defect is not limited to the above method.
[0015]
【The invention's effect】
According to the present invention, it is possible to relatively easily provide a method for correcting a gray-tone portion with high correction accuracy.
[Brief description of the drawings]
FIG. 1 is a schematic diagram for explaining an overview of an FIB device used in an embodiment.
FIG. 2 is a diagram for explaining an example of defect correction in the embodiment.
3A and 3B are diagrams for explaining a gray-tone mask, wherein FIG. 3A is a partial plan view and FIG. 3B is a partial cross-sectional view.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Light-shielding part 2 Transmission part 3 Gray-tone part 3a Light-shielding pattern 3b Transmission part 5 Gray-tone part 12 Black defect 11 White defect

Claims (3)

遮光部と、透光部と、グレートーンマスクを使用する露光機の解像限界以下の遮光パターンを形成した領域であってこの領域を透過する光の透過量を低減してフォトレジストの膜厚を選択的に変えることを目的とするグレートーン部とを有するグレートーンマスクにおけるグレートーン部の欠陥を修正する、グレートーンマスクの欠陥修正方法において、
前記グレートーン部に黒欠陥が発生した場合、前記黒欠陥の全域又は一部の領域、或いは黒欠陥を含む領域を、前記グレートーン部が正常なグレートーン部と同等なグレートーン効果が得られるような膜厚となるように、エッチングにより膜厚を低減させることを特徴とするグレートーンマスクの欠陥修正方法。A light-shielding portion, a light-transmitting portion, and a region in which a light-shielding pattern less than the resolution limit of an exposure machine using a gray-tone mask is formed, and the amount of light transmitted through this region is reduced to reduce the thickness of the photoresist. Correcting the defect of the gray-tone portion in the gray-tone mask having a gray-tone portion intended to selectively change the defect, the defect correction method of the gray-tone mask,
When a black defect occurs in the gray-tone portion, a gray-tone effect equivalent to that of a normal gray-tone portion can be obtained in the entire or partial region of the black defect or in a region including the black defect. A method for correcting a defect of a gray-tone mask, characterized in that the film thickness is reduced by etching so as to obtain such a film thickness. 前記エッチングが、ＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ）によるエッチングであることを特徴とする請求項１に記載のグレートーンマスクの欠陥修正方法。The method according to claim 1, wherein the etching is etching by FIB (Focused Ion Beam). 遮光部と、透光部と、グレートーンマスクを使用する露光機の解像限界以下の遮光パターンを形成した領域であってこの領域を透過する光の透過量を低減してフォトレジストの膜厚を選択的に変えることを目的とするグレートーン部とを有するグレートーンマスクにおけるグレートーン部の欠陥を修正する、グレートーンマスクの欠陥修正方法において、
前記グレートーン部白欠陥が発生した場合、前記白欠陥部分の一部又は全部、或いは前記白欠陥部分を含む領域に、ＦＩＢ修正法により、前記グレートーン部が正常なグレートーン部と同等なグレートーン効果が得られるような半透過性修正膜を形成することを特徴とするグレートーンマスクの欠陥修正方法。A light-shielding portion, a light-transmitting portion, and a region in which a light-shielding pattern less than the resolution limit of an exposure machine using a gray-tone mask is formed, and the amount of light transmitted through this region is reduced to reduce the thickness of the photoresist. Correcting the defect of the gray-tone portion in the gray-tone mask having a gray-tone portion intended to selectively change the defect, the defect correction method of the gray-tone mask,
When the gray-tone portion white defect occurs, a part of or the entirety of the white defect portion or an area including the white defect portion is subjected to FIB correction so that the gray-tone portion has a gray equivalent to a normal gray-tone portion. A method for repairing a defect in a gray-tone mask, comprising forming a semi-transmissive repair film capable of obtaining a tone effect.
JP2003098551A 2003-04-01 2003-04-01 Gray tone mask defect correction method Expired - Lifetime JP3993125B2 (en)

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CNB2004100309844A CN1284043C (en) 2003-04-01 2004-04-01 Defect correcting method of gray mask
CNA2006100922029A CN1869810A (en) 2003-04-01 2004-04-01 Method of correcting defect of graytone mask
KR1020040022660A KR20040088403A (en) 2003-04-01 2004-04-01 Method of correcting defect of graytone mask
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