CN1534366A - Defect correcting method of gray mask - Google Patents

Defect correcting method of gray mask Download PDF

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Publication number
CN1534366A
CN1534366A CNA2004100309844A CN200410030984A CN1534366A CN 1534366 A CN1534366 A CN 1534366A CN A2004100309844 A CNA2004100309844 A CN A2004100309844A CN 200410030984 A CN200410030984 A CN 200410030984A CN 1534366 A CN1534366 A CN 1534366A
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CN
China
Prior art keywords
gray
gray tone
tone portion
mask
defective
Prior art date
Application number
CNA2004100309844A
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Chinese (zh)
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CN1284043C (en
Inventor
中山宪治
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Hoya株式会社
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Filing date
Publication date
Priority to JP2003098551A priority Critical patent/JP3993125B2/en
Priority to JP98551/2003 priority
Application filed by Hoya株式会社 filed Critical Hoya株式会社
Publication of CN1534366A publication Critical patent/CN1534366A/en
Application granted granted Critical
Publication of CN1284043C publication Critical patent/CN1284043C/en

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Abstract

A method of correcting a defect of a graytone mask is provided to selectively vary a thickness of a photoresist film by reducing light transmittance, thereby obtaining high correction accuracy. A method of correcting a defect of a graytone mask is characterized in that transmittance of light transmitting a region consisting of a light-shielding layer(1), a light-transmitting layer(2), and light-shielding patterns(3a,3b) having resolution lower than that of an exposure meter using a graytone mask is reduced to correct a defect of a graytone portion(3). If a black defect occurs in the graytone portion, a film thickness corresponding to the entire area of the black defect, some area of the black defect, or an area including the black defect is reduced by etching to obtain graytone effect equal to a normal graytone portion.

Description

The defect correction method of gray mask

Technical field

The present invention relates to a kind of defect detecting method of gray tone portion of the gray mask that is used to make thin film transistor for liquid crystal display device substrate etc.

Background technology

In recent years, use in the mask field, just attempting using gray mask to reduce mask piece number (non-patent literature 1) at large LCD.

Herein, gray mask shown in Fig. 3 (1), has light shielding part 1, transmittance section 2 and gray tone portion 3 on transparency carrier.Gray tone portion 3 for example is to have formed the large LCD that the uses gray mask zone with the following shading graph 3a of the limiting resolution of exposure machine, and with reduce the light transmission capacity that sees through this regional light, the thickness that reduces this regional exposure and selectively changing photoresist is purpose forms.3b is the following trickle transmittance section of limiting resolution of the exposure machine of gray tone portion 3.The identical film of thickness that light shielding part 1 and shading graph 3a are all made by the same material that adopts chromium and chromium compound etc. usually forms.Transmittance section 2 and trickle transmittance section 3b all are the parts that does not form the transparency carrier of photomask etc. on transparency carrier.

Using the limiting resolution of the large LCD of gray mask with exposure machine, is about 3 μ m for the exposure machine of step-by-step system, is about 4 μ m for the exposure machine of mirror surface projection mode., for example, the interval width of the transmittance section 3b of gray tone portion 3 is set at less than 3 μ m for this reason, the line width of the shading graph 3a below the limiting resolution of exposure machine is set at less than 3 μ m at Fig. 3 (1).When exposing with exposure machine with above-mentioned large LCD, because the exposure light that has seen through gray tone portion 3 exposure deficiency as a whole, thereby the positive imaging-type photoresist by these gray tone portion 3 exposures only remains on the substrate under the state of attenuation at thickness.That is to say, etchant resist is along with the difference of exposure, in part corresponding and the part corresponding with gray tone portion 3 with common light shielding part 1, dissolubility generation at imaging liquid is poor, thereby the etchant resist shape after the video picture, shown in Fig. 3 (2), part 1 ' for example about 1.3 μ ms corresponding with common light shielding part 1, part 3 ' for example about 0.3 μ m corresponding with gray tone portion 3, the part corresponding with transmittance section 2 becomes the part 2 ' of no etchant resist.Then, carry out the 1st etching of processed substrate in the part 2 ' of no etchant resist, use ashing etc. to remove the etchant resist of the thin part 3 ' corresponding, and carry out the 2nd etching in this part with gray tone portion 3, thereby carry out the operation of 2 pieces of masks in the past with 1 piece of mask, reduced mask piece number.

In addition, gray tone portion for above-mentioned gray mask, the processing of trickle figure is very difficult, and the chip that takes place in manufacturing process etc. has a significant impact, owing to these reasons, taken place the graphic defects formed by thin, thick etc. CD sum of errors residue figure and the shortcoming figure of shading graph 13a etc. (below, the thick of figure and residue graphic defects etc. called black defective, the thin of figure and be short of defective etc. and call white defective).

Therefore, the defective at gray tone portion takes place applies figure adjustment, yet because the figure of gray tone portion is trickle, thereby to be recovered to identical with normal figure be very difficult.In order to address this problem, in patent documentation 1, put down in writing a kind of bearing calibration, this bearing calibration non-restoring becomes and the normal identical shape of figure, and obtains and the correction graph of normogram just as the gray tone effect that waits, thereby carries out the correction of gray tone portion.

[patent documentation 1] spy opens 2002-107913

[non-patent literature 1] monthly magazine FPD Intelligence, p.31-35, in May, 1999

Put down in writing a kind of bearing calibration in above-mentioned patent documentation 1, the laser CVD repair apparatus is used in this bearing calibration, removes defect part, forms afterwards and the photomask figure of normogram just as the gray tone figure that waits, and perhaps forms semi-transparent film.Yet in the former bearing calibration, the problem of existence is, compares with restoring normal figure, and correction is easy, yet transmittance control is difficult.In the method for the latter's the semi-transparent film pattern of formation, the problem that exists is, compares with forming shading graph, and transmittance control is to be relatively easy to, in the formation method of the latter's semi-transparent film pattern, it is relatively easy that the control ratio of transmittance forms the photomask figure.Yet for the laser CVD that uses at patent documentation 1, the beam diameter minimum also has 2 μ m φ, and laser self also has strength distribution at central part and periphery, thereby owing to the intensity distributions of this laser influences the film thickness distribution that produces calbrating film, the transmittance that the result produces calbrating film distributes.And the problem of existence is owing to be with weak energy film forming with the semi-transparent film of laser CVD film forming, thereby with the adaptation of transparency carrier a little less than, and peel off easily owing to cleaning afterwards etc.

Summary of the invention

The present invention proposes in order to address the above problem, and the purpose of this invention is to provide that a kind of ratio is easier to and the bearing calibration of the gray tone portion that correction accuracy is high.

The present invention has following formation.

The defect correction method of (constituting 1) a kind of gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and becomes the zone of the shading graph that has formed below the limiting resolution of the exposure machine that uses gray mask and optionally change the gray tone portion of the thickness of photoresist as purpose with the light transmission capacity that sees through this regional light by minimizing, it is characterized in that:

When above-mentioned gray tone portion takes place to deceive defective, reduce thickness by etching is carried out in the Zone Full of above-mentioned black defective or part zone or the zone that comprises black defective, make above-mentioned gray tone portion can reach thickness with the equal gray tone effect of normal gray tone portion with formation.

(constituting 2) according to the defect correction method of the gray mask of formation 1, it is characterized in that: above-mentioned etching is to utilize FIB (focused ion beam: etching Focused Ion Beam).

The defect correction method of (constituting 3) a kind of gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and becomes the zone of the shading graph that has formed below the limiting resolution of the exposure machine that uses gray mask and optionally change the gray tone portion of the thickness of photoresist as purpose with the light transmission capacity that sees through this regional light by minimizing, it is characterized in that:

When white defective takes place in above-mentioned gray tone portion, above-mentioned white defect part part or all or comprise in the zone of above-mentioned white defect part, use the FIB correction method, form and make above-mentioned gray tone portion can reach semi-transparency calbrating film with the equal gray tone effect of normal gray tone portion.

Below, the present invention will be described.

(correction method of black defective)

At first, the correction method according to the black defective of the defect correction method of gray mask of the present invention is described.

In the present invention,, reduce thickness, and, carry out the correction (constituting 1) of gray tone portion by forming semi-transparent film by prune (etching) black defective itself.

Use existing laser CVD repair apparatus, can only carry out removing of film, can not resemble FIB (focused ion beam: reduce thickness Focused Ion Beam).

,,, then reduce thickness certainly herein, and can only carry out ormal weight etching (constituting 2) black defective part selectivity if use FIB gas assisted etch as above-mentioned engraving method.Specifically, use correcting area is scanned, and, can only carry out the ormal weight etching black defective part selectivity only to the mode of necessary position emitting ions bundle.

Therefore, as in the past, remove the defective generation area and there is no need,, just can proofread and correct just as the gray tone portion of the gray tone effect that waits having easily with normogram only by setting etching condition.

And, the Zone Full or the part zone of black defective be arranged or comprise the zone (that is, not only deceive Zone Full or a part of zone of defective, and comprise the shading graph of its periphery) of deceiving defect part in etched zone.That is,, can obtain in the gray tone portion zone and the gray tone effect of normogram just as grade by carrying out etching.

(correction method of white defective)

Below, the correction method according to the white defective of the defect correction method of gray mask of the present invention is described.

In the present invention, at white defect part or comprise in the zone of white defect part, (focused ion beam: Focused Ion Beam) method is carried out film forming (constituting 3) to use FIB.By using the FIB method to carry out film forming, can form the high calbrating film of thickness (transmittance) homogeneity easily.

Same with above-mentioned black defective, also can carry out the only film forming of defective part, this situation is omitted such in the past operation of removing.But, after removing the neighboring area, can carry out film forming.

And there is the Zone Full or the part zone of white defective in the zone of formation semi-transparency calbrating film or comprises the zone of white defect part (that is, not only the Zone Full of white defective or a part are regional, and comprise the zone in its periphery zone).That is,, can obtain in the gray tone portion zone and the gray tone effect of normogram just as grade by carrying out the formation of semi-transparency calbrating film.

Description of drawings

Fig. 1 is used for the synoptic diagram that the summary of FIB device that embodiment is used describes.

Fig. 2 is used for the figure that the defect correction example to embodiment describes.

Fig. 3 is the key diagram of explanation gray mask, and Fig. 3 (1) is a partial top view, and Fig. 3 (2) is a part sectioned view.

Among the figure: 1 ... light shielding part; 2 ... the transmittance section; 3 ... gray tone portion; 3a ... shading graph; 3b ... the transmittance section; 5 ... gray tone portion; 12 ... black defective; 11 ... white defective

Embodiment

The summary of<FIB device 〉

Fig. 1 is the FIB (focused ion beam: the figure of Zhuan Zhi summary Focused Ion Beam) that expression the present invention uses.As shown in Figure 1, have: Ga takes place +The ion gun 1 of ion, optical system 2, ejaculation is used for and Ga +The electron gun 3 of the electronics of ion, and the gas rifle 4 that penetrates pyrene gas.

At timing, at first, on XY objective table 5, place as the photomask 6 that is corrected object, by mobile XY objective table 5, make the correction unit position move to the ion beam irradiation zone, setting comprises the correcting area of proofreading and correct the position.Then, in correcting area ion beam 7, use and detect secondary ion (Cr, the signal of secondary ion detecting device 8 detection rejected regions Si) that will take place this moment.Then, by ion beam 7 via proofreading and correct on the photomask 6 of irradiation optical system to the XY objective table 5.And the beam diameter of ion beam is below the 0.1 μ m φ.

When deceiving defect correction, use the black defective of ion beam 7 etchings.At this moment, use etching with gas rifle 9, simultaneously penetrate α gas (iodine gas), one side is shone ion beam 7, thereby promotes etching, and the damage to glass is eased.In the irradiation area of ion beam, one side is used scanner amplifier 10 scanning correcting areas, and according to signal emission that is detected by above-mentioned secondary ion detecting device 8 or emitting ions bundle not, defect part is deceived in etching.

When white defect correction, one side penetrates 7, one using gases rifles of ion beam and penetrates pyrene gas, thereby pyrene gas is contacted with ion beam 7 and polymerization (chemical reaction) takes place, and piles up carbon film in the irradiation area of ion beam 7.Situation also is like this, and in the irradiation area of ion beam 7, one side is used scanner amplifier 10 scanning correcting areas, and one side forms carbon film according to signal emission that is detected by above-mentioned secondary ion detecting device 8 or emitting ions bundle not at white defect part.

<bearing calibration 〉

Fig. 2 (1) has represented not have the normal gray tone figure of defective generation, and Fig. 2 (2) has represented the figure that black defective 11 and white defective 12 take place, the figure after Fig. 2 (3) has represented to proofread and correct.

(black defective)

For black defective, correcting area set for cover defective part (shown in the dotted line B zone) fully, (focused ion beam: ion beam Focused Ion Beam) carries out the above-mentioned gas assisted etch to be handled to use above-mentioned FIB.Herein, the illuminate condition of ion beam adopts to make the Cr of defective become semi-transparent film, and the condition that glass portion does not shine ion beam is carried out.Specifically, irradiation energy and time (sweep velocity) by the change ion beam, make the Cr of defective become semi-transparent film.

(white defective)

Defective for the part generation that comprises semi light transmitting part (gray tone portion) and figure, it is white defective, correcting area set for cover disconnection portion (shown in the dotted line W zone) fully, (focused ion beam: ion beam Focused Ion Beam) carries out film forming (utilizing the CVD film forming of FIB) to use above-mentioned FIB.Herein, the illuminate condition of ion beam adopts the condition that makes the film of wanting film forming become semi-transparent film to carry out.Specifically, irradiation energy and time (sweep velocity) by the change ion beam, make the film of wanting film forming become the semi-transparent film of desired transmittance.

And the engraving method of black defective is not limited to said method.

According to the present invention, can provide a kind of ratio to be easier to and the bearing calibration of the gray tone portion that correction accuracy is high.

Claims (3)

1. the defect correction method of a gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and becomes the zone of the shading graph that has formed below the limiting resolution of the exposure machine that uses gray mask and optionally change the gray tone portion of the thickness of photoresist as purpose with the light transmission capacity that sees through this regional light by minimizing, it is characterized in that:
When above-mentioned gray tone portion takes place to deceive defective, reduce thickness by etching is carried out in the Zone Full of above-mentioned black defective or part zone or the zone that comprises black defective, make above-mentioned gray tone portion can reach thickness with the equal gray tone effect of normal gray tone portion with formation.
2. the defect correction method of gray mask according to claim 1, it is characterized in that: above-mentioned etching is to utilize FIB (focused ion beam: etching Focused Ion Beam).
3. the defect correction method of a gray mask, be used for the defective of the gray tone portion of gray mask is proofreaied and correct, this gray mask has light shielding part, transmittance section and becomes the zone of the shading graph that has formed below the limiting resolution of the exposure machine that uses gray mask and optionally change the gray tone portion of the thickness of photoresist as purpose with the light transmission capacity that sees through this regional light by minimizing, it is characterized in that:
When white defective takes place in above-mentioned gray tone portion, above-mentioned white defect part part or all or comprise in the zone of above-mentioned white defect part, use the FIB correction method, form and make above-mentioned gray tone portion can reach semi-transparency calbrating film with the equal gray tone effect of normal gray tone portion.
CN 200410030984 2003-04-01 2004-04-01 Defect correcting method of gray mask CN1284043C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003098551A JP3993125B2 (en) 2003-04-01 2003-04-01 Gray tone mask defect correction method
JP98551/2003 2003-04-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN 200610092202 Division CN1869810A (en) 2003-04-01 2004-04-01 Method of correcting defect of graytone mask

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CN1534366A true CN1534366A (en) 2004-10-06
CN1284043C CN1284043C (en) 2006-11-08

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CN 200610092202 CN1869810A (en) 2003-04-01 2004-04-01 Method of correcting defect of graytone mask

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CN (2) CN1284043C (en)
TW (1) TWI278024B (en)

Cited By (9)

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CN101276140B (en) * 2007-03-31 2012-02-22 Hoya株式会社 Defect modifying method of gray tone mask, manufacturing method of gray tone mask, gray tone mask and pattern transfer print method
CN102402122A (en) * 2010-09-07 2012-04-04 无锡华润上华半导体有限公司 Mask aligner light leakage detection method and system
CN101025565B (en) * 2006-02-02 2012-08-22 Hoya株式会社 Method of modifying defect in gray tone mask and gray tone mask
CN102645839A (en) * 2011-06-15 2012-08-22 北京京东方光电科技有限公司 Mask plate and manufacturing method thereof
CN103383522A (en) * 2012-05-02 2013-11-06 Hoya株式会社 Photo mask, pattern transfer method and flat panel display manufacturing method
CN103383523A (en) * 2012-05-02 2013-11-06 Hoya株式会社 Photomask, image transfer method and manufacturing method of flat panel display
WO2016074584A1 (en) * 2014-11-13 2016-05-19 京东方科技集团股份有限公司 Thin-film transistor array substrate and preparation method therefor, and display device
CN107807493A (en) * 2017-09-28 2018-03-16 京东方科技集团股份有限公司 Mask plate and exposure sources
CN109212892A (en) * 2018-09-30 2019-01-15 惠科股份有限公司 A kind of light shield and its manufacturing method thereof

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JP4559921B2 (en) * 2005-06-20 2010-10-13 エスアイアイ・ナノテクノロジー株式会社 Gray tone pattern film defect correction method
JP5036349B2 (en) * 2007-02-28 2012-09-26 Hoya株式会社 Gray-tone mask defect correcting method and gray-tone mask manufacturing method
KR100930382B1 (en) 2007-05-15 2009-12-08 주식회사 하이닉스반도체 How to fix pattern defects in photomask
JP5057866B2 (en) * 2007-07-03 2012-10-24 Hoya株式会社 Gray-tone mask defect correcting method, gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method
JP2009020312A (en) * 2007-07-12 2009-01-29 Hoya Corp Method for correcting defect in gray tone mask, method for manufacturing gray tone mask, gray tone mask, and method for transferring pattern
TWI446105B (en) * 2007-07-23 2014-07-21 Hoya Corp Method of manufacturing a photomask, method of transferring a pattern, photomask and database
JP6076593B2 (en) * 2011-09-30 2017-02-08 Hoya株式会社 Multi-tone photomask for manufacturing display device, multi-tone photomask manufacturing method for display device manufacturing, pattern transfer method, and thin-film transistor manufacturing method

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* Cited by examiner, † Cited by third party
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CN101025565B (en) * 2006-02-02 2012-08-22 Hoya株式会社 Method of modifying defect in gray tone mask and gray tone mask
CN101276140B (en) * 2007-03-31 2012-02-22 Hoya株式会社 Defect modifying method of gray tone mask, manufacturing method of gray tone mask, gray tone mask and pattern transfer print method
CN102402122A (en) * 2010-09-07 2012-04-04 无锡华润上华半导体有限公司 Mask aligner light leakage detection method and system
CN102402122B (en) * 2010-09-07 2013-09-18 无锡华润上华半导体有限公司 Mask aligner light leakage detection method and system
CN102645839A (en) * 2011-06-15 2012-08-22 北京京东方光电科技有限公司 Mask plate and manufacturing method thereof
CN102645839B (en) * 2011-06-15 2013-11-27 北京京东方光电科技有限公司 Mask plate and manufacturing method thereof
CN103383523A (en) * 2012-05-02 2013-11-06 Hoya株式会社 Photomask, image transfer method and manufacturing method of flat panel display
CN103383522A (en) * 2012-05-02 2013-11-06 Hoya株式会社 Photo mask, pattern transfer method and flat panel display manufacturing method
CN103383522B (en) * 2012-05-02 2016-09-21 Hoya株式会社 The manufacture method of photomask, pattern transfer-printing method and flat faced display
CN103383523B (en) * 2012-05-02 2016-09-21 Hoya株式会社 The manufacture method of photomask, pattern transfer-printing method and flat faced display
WO2016074584A1 (en) * 2014-11-13 2016-05-19 京东方科技集团股份有限公司 Thin-film transistor array substrate and preparation method therefor, and display device
US10651212B2 (en) 2014-11-13 2020-05-12 Boe Technology Group Co., Ltd. Thin film transistor array substrate, method for manufacturing the same, and display device
CN107807493A (en) * 2017-09-28 2018-03-16 京东方科技集团股份有限公司 Mask plate and exposure sources
CN109212892A (en) * 2018-09-30 2019-01-15 惠科股份有限公司 A kind of light shield and its manufacturing method thereof

Also Published As

Publication number Publication date
JP3993125B2 (en) 2007-10-17
CN1284043C (en) 2006-11-08
KR20040088403A (en) 2004-10-16
CN1869810A (en) 2006-11-29
JP2004309515A (en) 2004-11-04
TWI278024B (en) 2007-04-01
TW200425294A (en) 2004-11-16

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