CN1865516A - Electroplating solution and electroplating method - Google Patents
Electroplating solution and electroplating method Download PDFInfo
- Publication number
- CN1865516A CN1865516A CNA2006100762890A CN200610076289A CN1865516A CN 1865516 A CN1865516 A CN 1865516A CN A2006100762890 A CNA2006100762890 A CN A2006100762890A CN 200610076289 A CN200610076289 A CN 200610076289A CN 1865516 A CN1865516 A CN 1865516A
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- amine
- leveling agent
- nitrogenous
- electroplate liquid
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
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- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Described are methods of and compositions for electrodepositing copper or other metals onto interconnects of a semiconductor substrate from an electroplating composition containing at least one nitrogen-containing additive. The nitrogen-containing additive has a molecular weight of between 10 and 1000, a concentration of between 5.0 and 10.0 milligrams per liter of the electroplating composition. The methods and compositions result in electroplated copper interconnects that have smooth surfaces that are relatively free of pits and humps.
Description
Technical field
The present invention relates to the electroplate liquid and the electro-plating method of electro-coppering or other metals, particularly the nitrogenous leveling agent of this electroplate liquid.
Background technology
Described in " Copper electroplating for futureultralarge scale integration interconnection; 18 (2) J.VAC.SCI.TECH.A 656-60 (2000) " that the people showed such as Gau, for reliability and the arithmetic speed that improves semiconductor transistor, the copper interconnects processing procedure replaces conventional aluminum intraconnections processing procedure gradually.With the viewpoint of material, the resistance ratio aluminium of copper is little, and conductance is than aluminium height, and be difficult for producing electromigration (when the electric current of constant density by metal connecting line, atomic structure is changed and produces the phenomenon of hole).Therefore in addition, the Heat conductivity of copper is also good than aluminium, can comparatively fast dispel the heat and consumes lower energy.Therefore utilize electro-coppering to become main flow as the intraconnections material.
In general, the acid electroplating liquid of electro-coppering comprises (1) dissolved mantoquita such as copper sulfate, (2) acid electrolyte such as sulfuric acid or hydrochloric acid, providing plating bath enough conductancies, and (3) additive such as tensio-active agent, gloss-imparting agent, leveling agent, inhibitor is to improve galvanized quality and efficient.The composition of relevant electroplate liquid can be with reference to following United States Patent (USP): U.S. Patent number 5,174,886; 5,068,013; 5,051,154 and 3,876,513.
Summary of the invention
The present invention relates to the electroplate liquid and the electro-plating method of electro-coppering or other metals, particularly the nitrogenous leveling agent of this electroplate liquid.The molecular weight of this nitrogenous leveling agent is preferably between 50 to 500 between 31 to 1000; Concentration is between 5 to 10mg/L, and electroplating temperature is lower than 50 ℃, is preferably between 10 to 35 ℃.Among one embodiment, this nitrogenous leveling agent is primary amine, secondary amine or tertiary amine.Among another embodiment, this nitrogenous leveling agent is aliphatic amide, ring-shaped fat amine, aromatic amine (as imidazoles, pyridine, or derivatives thereof) or heterocyclic amine.In another embodiment, this nitrogenous leveling agent is fatty quaternary ammonium salt, fragrant quaternary ammonium salt or heterocyclic quaternary ammonium salt.This nitrogenous leveling agent also can be a polymer, and its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine (as imidazoles, pyridine, or derivatives thereof), heterocyclic amine or quaternary ammonium salt.This nitrogenous leveling agent should have asymmetric charge density distribution (with respect to its core texture).
That is, the invention provides a kind of electro-plating method, this method comprises:
A) provide an electroplate liquid, comprise a metal ion, an acid electrolyte and a concentration between 5.0 to the nitrogenous leveling agent of 10.0mg/L;
B) this electroplate liquid is immersed in a substrate; And
C) electroplate a metal level in this substrate.
In the electro-plating method of the present invention, this nitrogenous leveling agent comprises primary amine, secondary amine, tertiary amine, aliphatic amide, ring-shaped fat amine, aromatic amine, heterocyclic amine, quaternary ammonium salt or aforesaid combination.
In the electro-plating method of the present invention, this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
In the electro-plating method of the present invention, this nitrogenous leveling agent is a polymer, and its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine, heterocyclic amine or quaternary ammonium salt.
In the electro-plating method of the present invention, this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
In the electro-plating method of the present invention, this its molecular weight of nitrogenous leveling agent is between 31-1000.
In the electro-plating method of the present invention, this its molecular weight of nitrogenous leveling agent is between 50-500.
The present invention also provides a kind of electroplate liquid, and this electroplate liquid comprises a metal ion, an acid electrolyte and a concentration between 5.0 to the nitrogenous leveling agent of 10.0mg/L.
In the electroplate liquid of the present invention, this nitrogenous leveling agent comprises primary amine, secondary amine, tertiary amine, aliphatic amide, ring-shaped fat amine, aromatic amine, heterocyclic amine or quaternary ammonium salt.
In the electroplate liquid of the present invention, this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
In the electroplate liquid of the present invention, this nitrogenous leveling agent is a polymer, and its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine, heterocyclic amine or quaternary ammonium salt.
In the electroplate liquid of the present invention, this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
In the electroplate liquid of the present invention, this its molecular weight of nitrogenous leveling agent is between 31-1000.
In the electroplate liquid of the present invention, the molecular weight of this nitrogenous leveling agent is between 50 to 500.
Its surface smoothing of the formed copper interconnects of electroplate liquid of the present invention and electro-plating method is than no concave-convex.
Description of drawings
Figure 1A to Fig. 1 E is a series of sectional views, in order to show the processing procedure of preferred embodiment electro-coppering of the present invention;
Fig. 2 is the semiconductor element of comparison the present invention and existing each self-forming of processing procedure, the difference of both life-spans and reliability.
Embodiment
For clear interpretation advantage of the present invention more, embodiment does explanation with conjunction with figs., and with identical part in the same digitized representation accompanying drawing.
Figure 1A to Fig. 1 E is a series of sectional views, in order to show the processing procedure of electro-coppering.Figure 1A is with the dielectric layer 102 of prior art on semiconductor substrate 106, defines an intraconnections opening such as groove or interlayer hole 100.Dielectric layer 102 can comprise silicon nitride, silicon oxide or carbon containing dielectric film, and conductive layer 104 can comprise various conductive connecting lines such as intraconnections, weld pad, grid capacitance etc.Groove 100 also can be formed directly in the dielectric layer 102 on semiconductor substrate 106, does not need the existence of conductive layer 104.Though in addition electroplating process normally the internal connecting layer on semiconductor substrate 106 carry out, also can directly define groove 100 in semiconductor substrate 106.The depth-to-width ratio of this groove 100 is defined as (degree of depth 110)/(width 108).For instance, be 0.1 micron if the degree of depth 110 is 1 micron and width 108, the depth-to-width ratio of this groove 100 is 10: 1.The depth-to-width ratio of preferred embodiment of the present invention has 4: 1 at least.Yet embodiments of the invention also can be applicable to lower depth-to-width ratio as 2: 1 or 3: 1.
Conformability deposition one resistance barrier adhesive coating 112 is shown in Figure 1B subsequently.This resistance barrier adhesive coating can hinder barrier electro-coppering puncture or diffuse to conductive layer 104 or semiconductor substrate 106, also can increase the sticking power of electro-coppering and dielectric layer.This resistance barrier adhesive coating can use sputter, chemical vapour deposition (hereinafter to be referred as CVD) or ald (hereinafter to be referred as ALD) to form, and its material can comprise that titanium nitride, tantalum nitride, tungsten nitride titanium or other heat-resistant metal alloys are as containing cobalt thin film.Afterwards, carry out the conformability deposition of copper crystal seed layer 114 as Fig. 1 C.Deposit the similar formation resistance of the mode barrier adhesive coating 112 of this copper crystal seed layer 114, this copper crystal seed layer can comprise titanium film, chromium thin film or copper film.
Then carry out electroplating process, form copper electroplated film disk 116 shown in Fig. 1 D.This electroplating process comprises: (1) is with the electroplate liquid in the wafer immersion plating device; (2) provide one electroplate be biased into wafer with Metal plating to wafer; (3) electroplate liquid of wafer in electroplanting device shifted out.The plated metal conductive layer is except copper, and plated material also can comprise aluminium, silver or gold.
After Fig. 1 D is presented at plating, will form hole 119 in the metal connecting line, and rat 118.The reason that forms hole 119 is owing to the plated metal bridge joint in the line opening of time micron-scale, and the projection 118 of plate surface causes the pit of metal connecting line at cmp (hereinafter to be referred as CMP) subsequently.Size is dwindled and will be made the problem of hole 119 in the electroplating process more serious, can suppress hole 119 and rat 118 and add leveling agent in the electroplate liquid.Leveling agent has the leveling effect that makes the electro-coppering surface smoothing, makes the deposition of line opening thicker faster on the one hand, makes near the prominent deposition of point slower thinner on the other hand.This leveling effect can be improved clearance filling capability and then reduce hole 119, and reduces the unevenness that is caused because of rat 118.Therefore effectively leveling agent can increase reliability, life-span and the usefulness of semiconductor element, and reduces the component failure that electromigration caused because of hole and rat initiation.Then the wafer with Fig. 1 D carries out the part that CMP protrudes with planarization, then deposits another conductive layer 120 in the electro-coppering after the planarization 116, shown in Fig. 1 E.If electro-coppering has been the last plain conductor of semiconductor element, then the processing procedure of this conductive layer 120 is inessential.
Existing leveling agent is the cationic polymer, and it has heavy molecular weight such as 10000-50000 reaching the leveling effect of electro-coppering, and avoids excessively electroplating and improving clearance filling capability.Yet huge molecular weight and strong excessively cationic characteristic make and should combine with the copper film easily by existing leveling agent, cause plain conductor to mix a large amount of impurity.This impurity causes the plain conductor pit and reduces semiconductor element usefulness as a result.This impurity comprises organic materials such as chlorine, carbon, nitrogen, sulphur or oxygen element etc.
The lower molecular weight amine compound can reduce and plain conductor absorption and bonded speed, is more effective leveling agent.Because of lower molecular weight (molecular weight is more preferred from 50 to 500 between 31 to 1000) amine compound has high transport property, the impurity ratio of copper interconnects will reduce.The kind of this amine compound comprises one-level, secondary, the tertiary amines that replaces or do not have replacement, and thinner classification comprises aliphatic amide, ring-shaped fat amine, aromatic amine (as imidazoles, pyridine, or derivatives thereof) or heterocyclic amine.For example, can enumerate disclosed imidazoles among the US 6444110, pyrrolidone, 1-(2-naphthoyl) imidazoles, 1-(dimethylamino alkylsulfonyl) imidazoles, 4,4-dimethyl-2-tetrahydroglyoxaline etc. as ring-shaped fat amine.The concentration of this amine compound should be between 5.0 to 10.0mg/L in the electroplate liquid in addition, and temperature should be lower than 50 ℃, and preferred embodiment is between 10 to 35 ℃.The nitrogenous leveling agent of high density cooperates lesser temps can increase the transport property and the usefulness of additive, combines with electrolytic coating to avoid bigger impurity.
According to the present invention, quaternary ammonium salt also is effective leveling agent, because of it has a protonated electric charge, can suppress impurity absorption or be linked to copper.So-called protonated electric charge is that entire compound then had positive charge after the atom in the compound lost electronics.The core of this protonated its structure of positive charge produces asymmetric electron density distribution, and thereby the absorption that suppresses impurity with combine.Asymmetric electron density distribution is that positive charge is not to be evenly distributed in whole molecule, but is distributed to an end of this molecule, when other are terminal when promoting electroplating processes, the absorption that this end can suppress impurity with combine.Quaternary ammonium salt comprises aliphatic ammonium salt, ring-shaped fat ammonium salt, fragrant ammonium salt or the heterocycle ammonium salt that replaces or do not have replacement.The object lesson of quaternary ammonium salt for example can be enumerated disclosed dodecyl benzyl dimethyl ammonium chloride, tetradecyl dimethyl benzyl ammonium chloride etc. among the US 6444110.In addition, nitrogenous leveling agent is that (molecular weight is between 31 to 1000 for polymer, be more preferred from 50 to 500), its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine (as imidazoles, pyridine, or derivatives thereof), heterocyclic amine or quaternary ammonium salt; All have the chemical structure of asymmetric charge distribution, and have good clearance filling capability, the less pit in electro-coppering surface behind CMP.The object lesson of this polymkeric substance can be enumerated the polymkeric substance of disclosed 2-vinyl pyridine among the US3956084 for example and/or 2-methyl-5-vinylpyrine and multipolymer etc.
Fig. 2 is the semiconductor element that comparison the present invention and existing processing procedure form, the difference of both life-spans and reliability.The x axle of reliability chart 122 is hour being the stress time of unit, and the y axle is to be the fault ratio of unit with per-cent.Stress time 124 is the time of member supports under fixed bias (far above operating voltage), and fault ratio 126 is element ratios of element fault behind specific stress time.For instance, if 100 elements damage 10 in test after 1 hour, its fault ratio is 10%; If damage 50 after 5 hours, its fault ratio is 50%.
Wherein, the concrete composition and the content of electroplate liquid are as follows:
| Electroplate liquid | The present invention | Existing processing procedure |
| Leveling agent | 4,4-dimethyl-2-tetrahydroglyoxaline | General leveling agent |
| Temperature of electroplating solution (℃) | 25 | 25 |
| Concentration (mg/L) | 30 | 10 |
The electro-coppering processing procedure that the leveling agent 130 of relatively existing leveling agent 128 and the embodiment of the invention carries out, in identical fault ratio 126 times, the stress time of the embodiment of the invention is long than prior art, and meaning is that the present invention electroplates the reliability of line also than the prior art height.The macromolecule (10000-50000) of existing leveling agent 128 forms about 3500 dusts of projection, and the lower molecular weight (100-200) of the leveling agent 130 of the embodiment of the invention forms about 1500 to 800 dusts of projection.In addition, the stress time of 50% fault ratio of the present invention (58.9 hours) surpasses the twice of existing processing procedure stress time (22.07).
The above only is preferred embodiment of the present invention; so it is not in order to limit scope of the present invention; any personnel that are familiar with this technology; without departing from the spirit and scope of the present invention; can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Being simply described as follows of symbol in the accompanying drawing:
100: groove or interlayer hole
102: dielectric layer
104: conductive layer
106: semiconductor substrate
108: the width of groove or interlayer hole
110: the degree of depth of groove or interlayer hole
112: resistance barrier adhesive coating
114: the copper crystal seed layer
116: the copper electroplated film disk
118: rat
119: hole
120: conductive layer
128: the element of existing processing procedure
130: semiconductor element of the present invention
Claims (14)
1. an electro-plating method is characterized in that, this method comprises:
A) provide an electroplate liquid, comprise a metal ion, an acid electrolyte and a concentration between 5.0 to the nitrogenous leveling agent of 10.0mg/L;
B) this electroplate liquid is immersed in a substrate; And
C) electroplate a metal level in this substrate.
2. electro-plating method according to claim 1 is characterized in that, this nitrogenous leveling agent comprises primary amine, secondary amine, tertiary amine, aliphatic amide, ring-shaped fat amine, aromatic amine, heterocyclic amine, quaternary ammonium salt or aforesaid combination.
3. electro-plating method according to claim 2 is characterized in that this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
4. electro-plating method according to claim 1 is characterized in that, this nitrogenous leveling agent is a polymer, and its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine, heterocyclic amine or quaternary ammonium salt.
5. electro-plating method according to claim 4 is characterized in that this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
6. electro-plating method according to claim 1 is characterized in that, this its molecular weight of nitrogenous leveling agent is between 31-1000.
7. electro-plating method according to claim 1 is characterized in that, this its molecular weight of nitrogenous leveling agent is between 50-500.
8. an electroplate liquid is characterized in that, this electroplate liquid comprises a metal ion, an acid electrolyte and a concentration between 5.0 to the nitrogenous leveling agent of 10.0mg/L.
9. electroplate liquid according to claim 8 is characterized in that, this nitrogenous leveling agent comprises primary amine, secondary amine, tertiary amine, aliphatic amide, ring-shaped fat amine, aromatic amine, heterocyclic amine or quaternary ammonium salt.
10. electroplate liquid according to claim 9 is characterized in that this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
11. electroplate liquid according to claim 8 is characterized in that, this nitrogenous leveling agent is a polymer, and its skeleton or branch comprise following at least a functional group: primary amine, secondary amine, tertiary amine, aliphatic amide, aromatic amine, heterocyclic amine or quaternary ammonium salt.
12. electroplate liquid according to claim 11 is characterized in that, this aromatic amine comprises imidazoles, pyridine, or derivatives thereof.
13. described according to Claim 8-electroplate liquid, it is characterized in that this its molecular weight of nitrogenous leveling agent is between 31-1000.
14. electroplate liquid according to claim 9 is characterized in that, the molecular weight of this nitrogenous leveling agent is between 50 to 500.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/908,143 US20060243599A1 (en) | 2005-04-28 | 2005-04-28 | Electroplating additive for improved reliability |
| US10/908,143 | 2005-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1865516A true CN1865516A (en) | 2006-11-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100762890A Pending CN1865516A (en) | 2005-04-28 | 2006-04-21 | Electroplating solution and electroplating method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060243599A1 (en) |
| CN (1) | CN1865516A (en) |
| TW (1) | TW200637936A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060860A (en) * | 2013-01-22 | 2013-04-24 | 中南大学 | Electroplating solution for acid copper-plating for printed circuit board as well as preparation method and application method for same |
| CN103601651A (en) * | 2013-11-25 | 2014-02-26 | 华东理工大学 | Multi-dendritic quaternary ammonium compound, and preparation and use thereof |
| CN104005060A (en) * | 2013-02-25 | 2014-08-27 | 罗门哈斯电子材料有限公司 | Electroplating bath |
| CN105705491A (en) * | 2013-11-20 | 2016-06-22 | 罗门哈斯电子材料有限责任公司 | Polymers containing benzimidazole moieties as levelers |
| CN104685107B (en) * | 2012-09-24 | 2017-05-03 | 埃其玛公司 | Electrolyte and method for electrodepositing copper onto a barrier layer |
| CN107326404A (en) * | 2017-07-25 | 2017-11-07 | 上海新阳半导体材料股份有限公司 | Leveling agent, the metal plating compositions containing it, preparation method and application |
| CN107881546A (en) * | 2017-10-20 | 2018-04-06 | 江西鑫力华数码科技有限公司 | A kind of electro-plating method of FPC |
| CN107919320A (en) * | 2017-11-15 | 2018-04-17 | 武汉新芯集成电路制造有限公司 | A kind of fill method of contact hole |
| CN110735158A (en) * | 2018-07-20 | 2020-01-31 | 科文特亚环保电镀技术（江苏）有限公司 | Electroplating method |
| CN111826691A (en) * | 2020-08-21 | 2020-10-27 | 东北大学 | Method for preparing zinc-tantalum alloy by using solvated ionic liquid |
| CN112176372A (en) * | 2020-09-27 | 2021-01-05 | 东北大学 | Method for preparing cobalt-tantalum alloy coating at low temperature by taking cobalt dichloride and tantalum pentachloride as raw materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| KR102312018B1 (en) * | 2013-12-09 | 2021-10-13 | 아베니 | Copper electrodeposition bath containing an elecrochemically inert cation |
| US9343294B2 (en) * | 2014-04-28 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure having air gap and method of forming the same |
| CN107708315B (en) * | 2017-10-31 | 2020-01-17 | 江苏贺鸿电子有限公司 | Ceramic-embedded heat dissipation circuit board and preparation method thereof |
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| US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
| US3876513A (en) * | 1972-06-26 | 1975-04-08 | Oxy Metal Finishing Corp | Electrodeposition of bright cobalt plate |
| US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
| US5051154A (en) * | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| US5068013A (en) * | 1988-08-23 | 1991-11-26 | Shipley Company Inc. | Electroplating composition and process |
| US5174886A (en) * | 1991-02-22 | 1992-12-29 | Mcgean-Rohco, Inc. | High-throw acid copper plating using inert electrolyte |
| US6709562B1 (en) * | 1995-12-29 | 2004-03-23 | International Business Machines Corporation | Method of making electroplated interconnection structures on integrated circuit chips |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US6350364B1 (en) * | 2000-02-18 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method for improvement of planarity of electroplated copper |
| US8002962B2 (en) * | 2002-03-05 | 2011-08-23 | Enthone Inc. | Copper electrodeposition in microelectronics |
| EP1422320A1 (en) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| US7128822B2 (en) * | 2003-06-04 | 2006-10-31 | Shipley Company, L.L.C. | Leveler compounds |
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2005
- 2005-04-28 US US10/908,143 patent/US20060243599A1/en not_active Abandoned
- 2005-11-08 TW TW094139120A patent/TW200637936A/en unknown
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2006
- 2006-04-21 CN CNA2006100762890A patent/CN1865516A/en active Pending
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| CN104685107B (en) * | 2012-09-24 | 2017-05-03 | 埃其玛公司 | Electrolyte and method for electrodepositing copper onto a barrier layer |
| CN103060860B (en) * | 2013-01-22 | 2016-01-20 | 中南大学 | A kind of printed circuit board acid copper-plating electroplate liquid and methods for making and using same thereof |
| CN103060860A (en) * | 2013-01-22 | 2013-04-24 | 中南大学 | Electroplating solution for acid copper-plating for printed circuit board as well as preparation method and application method for same |
| CN104005060A (en) * | 2013-02-25 | 2014-08-27 | 罗门哈斯电子材料有限公司 | Electroplating bath |
| CN105705491A (en) * | 2013-11-20 | 2016-06-22 | 罗门哈斯电子材料有限责任公司 | Polymers containing benzimidazole moieties as levelers |
| CN105705491B (en) * | 2013-11-20 | 2019-04-09 | 罗门哈斯电子材料有限责任公司 | The polymer containing benzimidazole moiety as leveling agent |
| CN103601651A (en) * | 2013-11-25 | 2014-02-26 | 华东理工大学 | Multi-dendritic quaternary ammonium compound, and preparation and use thereof |
| CN107326404A (en) * | 2017-07-25 | 2017-11-07 | 上海新阳半导体材料股份有限公司 | Leveling agent, the metal plating compositions containing it, preparation method and application |
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| CN107881546A (en) * | 2017-10-20 | 2018-04-06 | 江西鑫力华数码科技有限公司 | A kind of electro-plating method of FPC |
| CN107919320A (en) * | 2017-11-15 | 2018-04-17 | 武汉新芯集成电路制造有限公司 | A kind of fill method of contact hole |
| CN110735158A (en) * | 2018-07-20 | 2020-01-31 | 科文特亚环保电镀技术（江苏）有限公司 | Electroplating method |
| CN111826691A (en) * | 2020-08-21 | 2020-10-27 | 东北大学 | Method for preparing zinc-tantalum alloy by using solvated ionic liquid |
| CN111826691B (en) * | 2020-08-21 | 2021-09-21 | 东北大学 | Method for preparing zinc-tantalum alloy by using solvated ionic liquid |
| CN112176372A (en) * | 2020-09-27 | 2021-01-05 | 东北大学 | Method for preparing cobalt-tantalum alloy coating at low temperature by taking cobalt dichloride and tantalum pentachloride as raw materials |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200637936A (en) | 2006-11-01 |
| US20060243599A1 (en) | 2006-11-02 |
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