CN107919320A - A kind of fill method of contact hole - Google Patents
A kind of fill method of contact hole Download PDFInfo
- Publication number
- CN107919320A CN107919320A CN201711131177.5A CN201711131177A CN107919320A CN 107919320 A CN107919320 A CN 107919320A CN 201711131177 A CN201711131177 A CN 201711131177A CN 107919320 A CN107919320 A CN 107919320A
- Authority
- CN
- China
- Prior art keywords
- groove
- metal
- fill method
- contact hole
- intermixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to technical field of semiconductors, more particularly to a kind of fill method of contact hole, it is characterised in that including：Step S1, there is provided a wafer, and form a groove in the surface of wafer；Step S2, metal is plated into groove using an electroplating technology so that the speed of the bottom grown metal of groove is more than the speed of the opening growth metal of groove, until metal fills up groove and forms contact hole；Wherein, using intermixture control electroplating reaction in electroplating technology, the ratio that poising agent accounts for intermixture in intermixture is 50%~60%；The contact hole of large scale, high-aspect-ratio is can adapt to, avoids forming gap in the filling process of contact hole, the device performance of formation is good, and reliability is high.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of fill method of contact hole.
Background technology
In the production technology of semiconductor, such as including MOSFET (Metal-Oxide-Semiconductor Field
Effect Transistor mos field effect transistor, abbreviation MOSFET) device integration constantly carry
Height, the miniaturization of semiconductor devices, which is also just faced with, challenges.Contact hole structure is structure common in semiconductor, is generally used for
Structure above and below contact hole structure is electrically connected.
But in the preparation process of traditional contact hole structure, the especially contact hole structure of large scale, high-aspect-ratio
For groove, since accelerator is easily concentrated in the opening of groove, it is easy to cause whole groove to be also not filled by completely
When, the opening of groove just encloses, so as to form gap during metal filled trench, greatly influences the property of device
Energy.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of fill method of contact hole, wherein, including：
Step S1, there is provided a wafer, and form a groove in the surface of the wafer；
Step S2, metal is plated using an electroplating technology into the groove so that golden described in the bottom grown of the groove
The speed of category is more than the speed of the opening growth metal of the groove, is connect until the metal fills up the groove formation
Contact hole；
Wherein, using intermixture control electroplating reaction in the electroplating technology, poising agent accounts for described in the intermixture
The ratio of intermixture is 50%~60%.
Above-mentioned fill method, wherein, the size of the groove is 1~5 μm.
Above-mentioned fill method, wherein, the depth-to-width ratio of the groove is 1~10.
Above-mentioned fill method, wherein, in the step S2, the metal is also covered to the upper surface of the wafer.
Above-mentioned fill method, wherein, the metal is copper.
Above-mentioned fill method, wherein, the intermixture further includes accelerator and inhibitor.
Above-mentioned fill method, wherein, the ratio that the accelerator accounts for the intermixture is 30%~40%.
Above-mentioned fill method, wherein, the proportioning of the accelerator, the inhibitor and the poising agent is 9：2：
13.5。
Above-mentioned fill method, wherein, the groove is vertical-type.
Beneficial effect：The fill method of contact hole proposed by the present invention a kind of, can adapt to large scale, high-aspect-ratio connects
Contact hole, avoids forming gap in the filling process of contact hole, and the device performance of formation is good, and reliability is high.
Brief description of the drawings
Fig. 1 is the step flow chart of the fill method of contact hole in one embodiment of the invention；
Fig. 2~3 are the structure diagram that each step of the fill method of contact hole in one embodiment of the invention is formed.
Embodiment
The present invention is further described with reference to the accompanying drawings and examples.
As shown in Figure 1, in a preferred embodiment, it is proposed that a kind of fill method of contact hole, each step are formed
Structure can as shown in figures 2-3, wherein, which can include：
Step S1, there is provided a wafer 10, and form a groove TR in the surface of wafer 10；
Step S2, plates metal 20 into groove TR so that the bottom grown metal 20 of groove TR using an electroplating technology
The speed of opening growth metal 20 of the speed more than groove TR, until metal 20 fills up groove TR and forms contact hole；
Wherein, using intermixture control electroplating reaction in electroplating technology, poising agent accounts for the ratio of intermixture in intermixture
For 50%~60%.
In above-mentioned technical proposal, compared with traditional intermixture, poising agent accounts for intermixture in the intermixture that the present invention uses
Ratio be 50%~60%, be, for example, 53%, or 54%, or 55%, or 56%, or 57% etc., so that accelerator exists
The situation that the opening of groove TR is concentrated is improved, and has striven for time enough for groove TR bottom growns metal 20, until
Fill up whole groove；Other structures can also have been prepared in wafer 10, but these structures are this area conventional technique, herein not
Repeat again；The fill method of the contact hole of the present invention can be applied in the preparation of classes of semiconductors device, be not limited only to
MOSFET。
In a preferred embodiment, the size of groove TR is 1~5 μm, which can be the diameter of groove TR
Size.
In a preferred embodiment, the depth-to-width ratio of groove TR can be 1~10, be, for example, 1.5, or 3, or 5, or 7,
Or 9 etc..
In a preferred embodiment, in step S2, metal 20 is also covered to the upper surface of wafer.
In above-mentioned technical proposal, the upper surface that metal 20 covers wafer 10 is only a kind of preferable situation, can also be removed
The metal 20 of 10 upper surface of wafer is covered, only retains the metal 20 in groove TR.
In a preferred embodiment, metal 20 is copper, but this is a kind of preferable situation, is not construed as to this
The limitation of invention.
In a preferred embodiment, intermixture further includes accelerator and inhibitor.
In above-described embodiment, it is preferable that the ratio that accelerator accounts for intermixture is 30%~40%, is, for example, 33%, or
34%, or 35%, or 36%, or 37% etc..
In above-described embodiment, it is preferable that the proportioning of accelerator, inhibitor and poising agent is 9：2：13.5.
In a preferred embodiment, groove TR can be vertical-type or other shapes, such as section is ladder
Shape.
A kind of in conclusion fill method of contact hole proposed by the present invention, it is characterised in that including：Step S1, there is provided
One wafer, and form a groove in the surface of wafer；Step S2, plates metal into groove so that groove using an electroplating technology
Bottom grown metal speed be more than groove opening growth metal speed, until metal fill up groove formed contact
Hole；Wherein, using intermixture control electroplating reaction in electroplating technology, the ratio that poising agent accounts for intermixture in intermixture is 50%
~60%；The contact hole of large scale, high-aspect-ratio is can adapt to, avoids forming gap in the filling process of contact hole, is formed
Device performance it is good, reliability is high.
By explanation and attached drawing, the exemplary embodiments of the specific structure of embodiment are given, it is smart based on the present invention
God, can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.Weighing
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (9)
- A kind of 1. fill method of contact hole, it is characterised in that including：Step S1, there is provided a wafer, and form a groove in the surface of the wafer；Step S2, plates metal so that metal described in the bottom grown of the groove using an electroplating technology into the groove Speed is more than the speed of the opening growth metal of the groove, until the metal fills up the groove and forms contact Hole；Wherein, using intermixture control electroplating reaction in the electroplating technology, poising agent accounts for the mixing in the intermixture The ratio of agent is 50%~60%.
- 2. fill method according to claim 1, it is characterised in that the size of the groove is 1~5 μm.
- 3. fill method according to claim 1, it is characterised in that the depth-to-width ratio of the groove is 1~10.
- 4. fill method according to claim 1, it is characterised in that in the step S2, the metal is also covered to institute State the upper surface of wafer.
- 5. fill method according to claim 1, it is characterised in that the metal is copper.
- 6. fill method according to claim 1, it is characterised in that the intermixture further includes accelerator and inhibitor.
- 7. fill method according to claim 6, it is characterised in that the ratio that the accelerator accounts for the intermixture is 30%~40%.
- 8. fill method according to claim 6, it is characterised in that the accelerator, the inhibitor and the balance The proportioning of agent is 9：2：13.5.
- 9. fill method according to claim 1, it is characterised in that the groove is vertical-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711131177.5A CN107919320A (en) | 2017-11-15 | 2017-11-15 | A kind of fill method of contact hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711131177.5A CN107919320A (en) | 2017-11-15 | 2017-11-15 | A kind of fill method of contact hole |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107919320A true CN107919320A (en) | 2018-04-17 |
Family
ID=61895612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711131177.5A Pending CN107919320A (en) | 2017-11-15 | 2017-11-15 | A kind of fill method of contact hole |
Country Status (1)
| Country | Link |
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| CN (1) | CN107919320A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865516A (en) * | 2005-04-28 | 2006-11-22 | 台湾积体电路制造股份有限公司 | Electroplating solution and electroplating method |
| CN102031554A (en) * | 2009-09-25 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Online monitoring method for electroplating process stability |
-
2017
- 2017-11-15 CN CN201711131177.5A patent/CN107919320A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865516A (en) * | 2005-04-28 | 2006-11-22 | 台湾积体电路制造股份有限公司 | Electroplating solution and electroplating method |
| CN102031554A (en) * | 2009-09-25 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Online monitoring method for electroplating process stability |
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Application publication date: 20180417 |