CN1855546A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1855546A CN1855546A CN 200610082508 CN200610082508A CN1855546A CN 1855546 A CN1855546 A CN 1855546A CN 200610082508 CN200610082508 CN 200610082508 CN 200610082508 A CN200610082508 A CN 200610082508A CN 1855546 A CN1855546 A CN 1855546A
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- drift region
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- semiconductor device
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Abstract
Description
离子注入次数 | DOSE(cm-2) | 耐电压 | 导通电阻 | ||||
1.5MeV | 1.0MeV | 0.5MeV | 0.2MeV | ||||
半导体器件2 | 2 | 5.5E+12 | - | 5.5E+12 | - | 59.5V | 16.5mΩmm2 |
半导体器件1 | 3 | 3.0E+12 | 3.0E+12 | 3.0E+12 | - | 63.0V | 16.7mΩmm2 |
半导体器件51 | 4 | 2.5E+12 | 2.5E+12 | 2.5E+12 | 2.5E+12 | 47.4V | 17.0mΩmm2 |
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005130810 | 2005-04-28 | ||
JP2005130810 | 2005-04-28 | ||
JP2006105427 | 2006-04-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1855546A true CN1855546A (zh) | 2006-11-01 |
CN100502041C CN100502041C (zh) | 2009-06-17 |
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ID=37195527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100825086A Expired - Fee Related CN100502041C (zh) | 2005-04-28 | 2006-04-28 | 半导体器件 |
Country Status (1)
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CN (1) | CN100502041C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102881723A (zh) * | 2011-07-14 | 2013-01-16 | 上海华虹Nec电子有限公司 | 一种半导体器件结构及其制作方法 |
CN107742646A (zh) * | 2017-09-21 | 2018-02-27 | 北京世纪金光半导体有限公司 | 一种具有掩埋悬浮结的碳化硅平面栅mosfet器件元胞结构 |
CN117219660A (zh) * | 2023-11-08 | 2023-12-12 | 深圳天狼芯半导体有限公司 | 一种基于栅极掩埋的mosfet器件及制备方法 |
-
2006
- 2006-04-28 CN CNB2006100825086A patent/CN100502041C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102881723A (zh) * | 2011-07-14 | 2013-01-16 | 上海华虹Nec电子有限公司 | 一种半导体器件结构及其制作方法 |
CN102881723B (zh) * | 2011-07-14 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件结构及其制作方法 |
CN107742646A (zh) * | 2017-09-21 | 2018-02-27 | 北京世纪金光半导体有限公司 | 一种具有掩埋悬浮结的碳化硅平面栅mosfet器件元胞结构 |
CN117219660A (zh) * | 2023-11-08 | 2023-12-12 | 深圳天狼芯半导体有限公司 | 一种基于栅极掩埋的mosfet器件及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100502041C (zh) | 2009-06-17 |
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C14 | Grant of patent or utility model | ||
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C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 Termination date: 20190428 |
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CF01 | Termination of patent right due to non-payment of annual fee |