CN1851972A - MEMS millimeter phase-shifter of low-exciting-voltage and precisie control - Google Patents
MEMS millimeter phase-shifter of low-exciting-voltage and precisie control Download PDFInfo
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- CN1851972A CN1851972A CN 200610010061 CN200610010061A CN1851972A CN 1851972 A CN1851972 A CN 1851972A CN 200610010061 CN200610010061 CN 200610010061 CN 200610010061 A CN200610010061 A CN 200610010061A CN 1851972 A CN1851972 A CN 1851972A
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Abstract
This invention relates to a MEMS mm wave phase shifter with low excitation voltage and capable of controlling phase shift accurately, which fixes an inductance coil on the earth with the inductance volume over 10nH, in which, an insulation layer is set between the coil and the earth, said coil is connected with one end of the metal spring, the other end of the spring is connected with a metal bridge and supports it and a medium chip is set on the top surface of a signal line under the metal bridge.
Description
Technical field
The present invention relates to a kind of phase shifter.
Background technology
The phased scanning of phase array antenna beam relies on is a large amount of phase shifters in the antenna array, and in phased array radar, phased array antenna has thousands of unit, and each unit all needs a phase shifter.In the array on each unit the phase place of phase shifter can between (0～2 π), adjust.Electricity consumption prosecutor formula is regulated phase shifter, can change the PHASE DISTRIBUTION on the antenna aperature, realizes that wave beam is at spacescan.Therefore, phase shifter is crucial microwave component in the feed system.Realize that by the PIN switching diode C, X and Ku wave band adopt ferrite device to realize more mostly at S, L and pattern-band phase array medium-high frequency digital phase shifter.But arrived millimeter wave frequency band, above-mentioned implementation is no longer suitable, after frequency is elevated to this wave band, the spacing of its bay is very little, the unreasonable of layout will cause a series of problems such as power capacity and graing lobe increase, therefore the more high performance phase shifter of research and development, this comprises widens frequency bandwidth, reduces the wastage, reduces phase shifter volume etc.Therefore use MEMS (microelectromachiningsystem) technology, research and development can reduce volume and weight greatly based on the millimeter phase-shifter of MEMS technology.The MEMS phase shifter is good with its isolation, insert advantages such as loss is low, the control circuit energy consumption is low, working band is wide, power capacity is big, processing cost is low and obtained application more and more widely in many microwave and millimeter waves system.
Traditional distributed phase shifter structure, as shown in Figure 1, it has adopted the distributed transmission line structure, loading MEMS metal bridge by the cycle on coplanar waveguide transmission line, thereby control the height of bridge and change electric capacity between metal bridge and the transmission line and change propagation constant on the transmission line applying voltage on the metal bridge, realize changing the purpose of incident wave phase shift.
This metal bridge structure causes the actuation voltage of metal bridge higher because the bridge deck width of itself is bigger, and between 20～100V, in communication system, so high direct voltage is difficult to realize in system usually.And because the fatigue effect of metal bridge, after work a period of time, metal bridge locate inaccurate under pull-down state, can cause the precision of phase place is controlled not accurate enough, in case and metal bridge contact with holding wire, can cause short circuit and useful life of reducing device.
For the millimeter wave distributed MEMS phase shifter, in order to realize the practicability purpose, except will guaranteeing electrical characteristics such as its original broadband, low-loss, also to further reduce its driving voltage and improve the phase control precision, raising that the more important thing is these performances can not be a cost to sacrifice performance index such as cost, volume, but not a kind of so so far phase shifter occurs.
Summary of the invention
There are driving voltage height, problem that phase accuracy is low at existing MEMS phase shifter, the invention provides a kind of excellent electric characteristics such as broadband, low-loss that not only have, and further reduced driving voltage and improved the phase control precision, realize the low driving voltage that cost is low, volume is little and accurately controlled the MEMS millimeter phase-shifter of phase-shift characterisitc.
The MEMS millimeter phase-shifter of a kind of low driving voltage and accurate control phase-shift characterisitc, it comprises bottom substrate 1, on bottom substrate 1, be arranged at intervals with holding wire 2 and ground wire 3, it also comprises the metal bridge 4 directly over the crossover signal line 2, be fixed with the inductance coil 8 of inductance value more than 10nH on the described ground wire 3, be provided with insulating barrier 7 between inductance coil 8 and the ground wire 3, described inductance coil 8 is connected with an end of metal spring 6, the other end of metal spring 6 is connected with metal bridge 4 and metal bridge 4 is supported, and the upper surface of the holding wire 2 below metal bridge 4 is provided with DIELECTRIC CONSTANT
rFor: 2≤ε
r≤ 20 dielectric substrate 5.
MEMS phase shifter of the present invention is operated in the millimeter wave working frequency range of 30-40GHz, compare with design in the past, it has broadband (working frequency range 30GHz-40GHz) under the prerequisite that does not increase cost, loss is low, driving voltage is low, the advantage that the phase shift control precision is high, through emulation experiment, the loss of phase shifter of the present invention＜-1dB, reflection coefficient is lower than-10dB, the phase shift precision is in ± 5 °, driving voltage is lower than 10V, and phase shifter size of the present invention is little, life-span is long, cost is low, be fit to low-cost production in enormous quantities fully, can be widely used in radio-frequency (RF) communication system and the small-sized phased array antenna system, be beneficial to and apply.
Description of drawings
Fig. 1 is traditional distributed phase shifter structure schematic diagram, Fig. 2 is a phase shifter structure schematic diagram of the present invention, Fig. 3 is a phase shifter front view of the present invention, Fig. 4 is the A-A cutaway view of Fig. 3, Fig. 5 is the I place enlarged diagram of Fig. 3, and Fig. 6 is the K place enlarged diagram of Fig. 4, and Fig. 7 is embodiment ten described radio frequency simulation result schematic diagrams, Fig. 8 is embodiment ten described excitation voltage emulation result schematic diagrams, and Fig. 9 is the phase shift schematic diagram of embodiment ten described MEMS phase shifters.
Embodiment
Embodiment one: present embodiment is a kind of low driving voltage and the MEMS millimeter phase-shifter of accurately controlling phase-shift characterisitc, with reference to Fig. 2～Fig. 6, it comprises bottom substrate 1, on bottom substrate 1, be arranged at intervals with holding wire 2 and ground wire 3, it also comprises the metal bridge 4 directly over the crossover signal line 2, be fixed with the inductance coil 8 of inductance value more than 10nH on the described ground wire 3, be provided with insulating barrier 7 between inductance coil 8 and the ground wire 3, described inductance coil 8 is connected with an end of metal spring 6, the other end of metal spring 6 is connected with metal bridge 4 and metal bridge 4 is supported, and the upper surface of the holding wire 2 below metal bridge 4 is provided with DIELECTRIC CONSTANT
rFor: 2≤ε
r≤ 20 dielectric substrate 5.
Present embodiment requires the inductance value of inductance coil 8 more than 10nH, can play choking effect to radio-frequency current, inductance value can be realized described purpose more than 10nH, at 20nH, 50nH, 100nH, 200nH, 500nH, the big more effect of inductance value is good more such as inductance value.
Present embodiment is different with traditional distributed MEMS phase shifter is to have adopted two important techniques to reduce driving voltage and improve the phase shift control precision: thereby one, reduced drop-down stress by the spring constant that on the MEMS metal bridge, uses spring structure to improve metal bridge, therefore reduced driving voltage.Two, accurately control phase shift by the dielectric substrate between holding wire and the metal bridge, different with traditional working method, after applying direct voltage, metal bridge can directly pull down to the accurate location of realizing the metal bridge height on the dielectric substrate, thereby realized the accurate control to phase shift, this in addition mode also can also improve the figure of merit (phase-shift phase of unit length) and the useful life of phase shifter.
Embodiment two: be that with embodiment one difference the dielectric substrate 5 that present embodiment is selected for use is that polyimide material is made, the DIELECTRIC CONSTANT of polyimides
r=3.4, the thickness h of described dielectric substrate 5
1Be 0.1 μ m.
Embodiment three: be that with embodiment one difference present embodiment is selected for use quartzy as dielectric substrate, quartzy DIELECTRIC CONSTANT
r=3.78, the thickness h of described dielectric substrate 5
1Be 5 μ m.
Embodiment four: be that with embodiment one difference present embodiment selects for use Rogers 5880 as dielectric substrate, the DIELECTRIC CONSTANT of Rogers 5880 section bar material
r=2.2, the thickness h of described dielectric substrate 5
1Be 1 μ m.
Embodiment five: be that with embodiment one difference present embodiment is selected DIELECTRIC CONSTANT
rSilicon materials between 8～10 are as dielectric substrate, the thickness h of described dielectric substrate 5
1Be 3 μ m.
Embodiment six: be that with embodiment one difference present embodiment is selected DIELECTRIC CONSTANT
rInsulating material between 2～20 prepares insulating barrier 7, and the dielectric constant of insulating material is big more, can increase isolation more, reduces the wastage.
Embodiment seven: present embodiment and embodiment six differences are, select DIELECTRIC CONSTANT
r=7.6 silicon nitride material is made insulating barrier 7, and silicon nitride has the advantage that raw material is easy to get, cost is low.
Embodiment eight: present embodiment and embodiment six differences are, select DIELECTRIC CONSTANT
r=3.4 polyimide material is made insulating barrier 7, and polyimides has the advantage that raw material is easy to get, cost is low.
Embodiment nine: present embodiment selects gold or copper product to make metal spring 6, the lossy low advantage of gold utensil, and copper has the low advantage of cost, can select as required.In actual the use, also can select other metals such as nickel or chromium material metal spring 6, can both realize purpose of the present invention, all within protection scope of the present invention.
Embodiment ten: the selected bottom substrate of present embodiment 1 is made for Rogers 5880 materials, with reference to Fig. 2, and the thickness h of bottom substrate 1
2=508 μ m, the DIELECTRIC CONSTANT of bottom substrate 1
r=2.2, co-planar waveguide center signal line 2 conductor tape width W
1=100 μ m, between holding wire 2 and the ground wire 3 apart from G=100 μ m, MEMS metal bridge 4 width w
2=25 μ m, between the adjacent metal bridge 4 apart from s=100 μ m, the joint number n=10 of metal bridge 4, the dielectric substrate 5 between MEMS metal bridge 4 and holding wire 2 selects for use the polyimides material to make, the DIELECTRIC CONSTANT of polyimides
r=3.4.By between metal bridge 4 and holding wire 2, applying the height that direct voltage changes metal bridge 4, when not applying voltage, metal bridge 4 keeps normal condition, metal bridge 4 produces deformation after applying voltage, drop-down on the dielectric substrate 5 that is applied to holding wire 2, at this moment the electric capacity between metal bridge 4 and the holding wire 2 changes, and causes that phase-shift constant changes on the transmission line, thereby has realized the change of phase shift.
Fig. 7～Fig. 9 is based on the electromagnetic-field simulation result of said structure.In the frequency band of 30-40GHz, insert loss and be lower than-1dB, reflection coefficient is lower than-10dB.Driving voltage all is lower than 10V when the metal bridge width is respectively 25 μ m and 50 μ m.Phase shift has the better linearity degree in whole passband, can reach 90 ° in the phase shift of 35GHz place, and error precision is in ± 5 °.
Claims (10)
1. a low driving voltage and accurately the MEMS millimeter phase-shifter of control phase-shift characterisitc, it comprises bottom substrate (1), on bottom substrate (1), be arranged at intervals with holding wire (2) and ground wire (3), it also comprises the metal bridge (4) directly over the crossover signal line (2), it is characterized in that being fixed with on the described ground wire (3) inductance coil (8) of inductance value more than 10nH, be provided with insulating barrier (7) between inductance coil (8) and the ground wire (3), described inductance coil (8) is connected with an end of metal spring (6), the other end of metal spring (6) is connected with metal bridge (4) and metal bridge (4) is supported, and the upper surface of the holding wire (2) below metal bridge (4) is provided with DIELECTRIC CONSTANT
rFor: 2≤ε
r≤ 20 dielectric substrate (5).
2. the MEMS millimeter phase-shifter of low driving voltage according to claim 1 and accurate control phase-shift characterisitc is characterized in that described dielectric substrate (5) is to be made by polyimide material.
3. the MEMS millimeter phase-shifter of low driving voltage according to claim 1 and accurate control phase-shift characterisitc is characterized in that described dielectric substrate (5) is to be made by quartz material.
4. the MEMS millimeter phase-shifter of low driving voltage according to claim 1 and accurate control phase-shift characterisitc is characterized in that described dielectric substrate (5) is to be made by Rogers 5880 section bar material.
5. the MEMS millimeter phase-shifter of low driving voltage according to claim 1 and accurate control phase-shift characterisitc is characterized in that described dielectric substrate (5) is by DIELECTRIC CONSTANT
rSilicon materials between 8～10 are made.
6. according to claim 1,2,3,4 or 5 described low driving voltages with accurately control the MEMS millimeter phase-shifter of phase-shift characterisitc, it is characterized in that the thickness (h of described dielectric substrate (5)
1) be: 0＜h
1≤ 5 μ m.
7. according to claim 1,2,3,4 or 5 described low driving voltages with accurately control the MEMS millimeter phase-shifter of phase-shift characterisitc, it is characterized in that described insulating barrier (7) is by DIELECTRIC CONSTANT
rBe 2≤ε
r≤ 20 insulating material is made.
8. the MEMS millimeter phase-shifter of low driving voltage according to claim 7 and accurate control phase-shift characterisitc is characterized in that described insulating material is silicon nitride or polyimides.
9. according to claim 1,2,3,4 or 5 described low driving voltages with accurately control the MEMS millimeter phase-shifter of phase-shift characterisitc, it is characterized in that described metal spring (6) is to be made by gold or copper product.
10. according to claim 1,2,3,4 or 5 described low driving voltages with accurately control the MEMS millimeter phase-shifter of phase-shift characterisitc, it is characterized in that described metal spring (6) is to be made by nickel or chromium material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100100611A CN100566010C (en) | 2006-05-19 | 2006-05-19 | The MEMS (micro electro mechanical system) millimeter phase-shifter of low driving voltage and accurate control phase-shift characterisitc |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100100611A CN100566010C (en) | 2006-05-19 | 2006-05-19 | The MEMS (micro electro mechanical system) millimeter phase-shifter of low driving voltage and accurate control phase-shift characterisitc |
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| CN1851972A true CN1851972A (en) | 2006-10-25 |
| CN100566010C CN100566010C (en) | 2009-12-02 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112787052A (en) * | 2019-11-07 | 2021-05-11 | 京东方科技集团股份有限公司 | MEMS phase shifter and manufacturing method thereof |
| WO2022087872A1 (en) * | 2020-10-28 | 2022-05-05 | 京东方科技集团股份有限公司 | Phased array antenna system and electronic device |
| WO2022160157A1 (en) * | 2021-01-28 | 2022-08-04 | 京东方科技集团股份有限公司 | Phase shifter and antenna |
| WO2023005598A1 (en) * | 2021-07-29 | 2023-02-02 | 京东方科技集团股份有限公司 | Antenna, antenna array, and communication system |
| WO2023122887A1 (en) * | 2021-12-27 | 2023-07-06 | 京东方科技集团股份有限公司 | Phase shifter and preparation method therefor, and phased array antenna |
-
2006
- 2006-05-19 CN CNB2006100100611A patent/CN100566010C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112787052A (en) * | 2019-11-07 | 2021-05-11 | 京东方科技集团股份有限公司 | MEMS phase shifter and manufacturing method thereof |
| CN112787052B (en) * | 2019-11-07 | 2022-08-19 | 京东方科技集团股份有限公司 | MEMS phase shifter and manufacturing method thereof |
| WO2022087872A1 (en) * | 2020-10-28 | 2022-05-05 | 京东方科技集团股份有限公司 | Phased array antenna system and electronic device |
| US20220320750A1 (en) * | 2020-10-28 | 2022-10-06 | Boe Technology Group Co., Ltd. | Phased Array Antenna System and Electronic Device |
| WO2022160157A1 (en) * | 2021-01-28 | 2022-08-04 | 京东方科技集团股份有限公司 | Phase shifter and antenna |
| CN115176382A (en) * | 2021-01-28 | 2022-10-11 | 京东方科技集团股份有限公司 | Phase shifter and antenna |
| CN115176382B (en) * | 2021-01-28 | 2023-10-27 | 京东方科技集团股份有限公司 | Phase shifter and antenna |
| WO2023005598A1 (en) * | 2021-07-29 | 2023-02-02 | 京东方科技集团股份有限公司 | Antenna, antenna array, and communication system |
| WO2023122887A1 (en) * | 2021-12-27 | 2023-07-06 | 京东方科技集团股份有限公司 | Phase shifter and preparation method therefor, and phased array antenna |
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| CN100566010C (en) | 2009-12-02 |
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