CN201623242U - Microwave and millimeter wave multi-stub load line phase shifter - Google Patents

Microwave and millimeter wave multi-stub load line phase shifter Download PDF

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CN201623242U
CN201623242U CN2009201803435U CN200920180343U CN201623242U CN 201623242 U CN201623242 U CN 201623242U CN 2009201803435 U CN2009201803435 U CN 2009201803435U CN 200920180343 U CN200920180343 U CN 200920180343U CN 201623242 U CN201623242 U CN 201623242U
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transmission
line
phase shifter
microwave
transmission line
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朱旗
龚晨
李珊珊
李婷霞
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University of Science and Technology of China USTC
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Abstract

The utility model belongs to the technical field of microwave and millimeter wave, in particular to manufacturing a microwave and millimeter wave phase shifter. The phase shifter at least includes a microstrip transmission line structure unit connected with a plurality of stubs in parallel; the structure unit is a microstrip transmission line which is curved on a printed circuit board and connected with a plurality of stub lines in parallel, and consists of a main transmission line, an input end, an output end as well as transmission branches and earthing short circuit nails connected in parallel; each transmission branch is cut off at a position which is of one eighth length to the main transmission line, and a PIN switch controlling the phases of the electromagnetic waves of the transmission line unit is arranged at the cut-off part; the length of the main transmission line is of one fourth wavelength and the width of the main transmission line is of 0.2-2mm; the length of the transmission branch is of three eighth wavelength and the width of the transmission branch is of 0.2-1mm; the distance between neighboring transmission branches is of one fourth wavelength; and the two ends of the main transmission line are the input end and the output end of the transmission line. The phase shifter can be cascaded into a multi-phase microwave and millimeter wave digital type phase shifter which has the advantages of small lose and size, simple structure, easy manufacture, etc, and has advantages in application of radar and phased-array antenna.

Description

Microwave millimeter wave multi-node load line phase shifter
Technical Field
The utility model belongs to the technical field of microwave millimeter wave, concretely relates to microwave millimeter wave moves preparation of looks ware.
Background
Microwave and millimeter wave phase shifters find application in a variety of fields, such as radar systems, satellite communication systems, and phased array antenna arrays. There are many types of phase shifters, and there are five general categories according to the materials used: ferrite phase shifters, ferroelectric phase shifters, semiconductor diode phase shifters, gallium arsenide MMIC phase shifters, and MEMS phase shifters.
The first volume of the book, "Microwave and Millimer Wave Phase Shifters," published by Arech house in 1991, details the main types, designs, fabrication, and applications of Ferrite Phase Shifters. The ferrite phase shifter mainly utilizes an external magnetic field to change the magnetic conductivity of ferrite in the waveguide, thereby changing the phase speed of electromagnetic waves to obtain different phase shift quantities. The advantages are that: wide band and large power capacity; the disadvantages are that: the volume is large, the loss is large, the switching speed is slow, and the requirements of mobile communication are difficult to meet.
Kozyre et al published a paper on IEEE microwave theory and technology International conference on "designing Phase Shifters using ferroelectric dielectric materials" (Application of ferroelectronics in Phase Shifters Design, A.Kozyrev, V.Osadchy, A.Pavlov, L.Sengupta, 2000IEEE MTT-S digest.P1355-1358). The ferroelectric phase shifter mainly changes the dielectric coefficient of the medium by changing the magnitude of the direct current bias voltage applied to the ferroelectric medium, so that the phase speed of the microwave millimeter wave signal is changed, and the phase shifting purpose is realized. The advantages are that: the structure is simple, the volume is small, the weight is light, the loss is small, and the response speed is high; the disadvantages are that: small power capacity
In 1976, the eighth section of microstrip solid control circuit in the book "microstrip circuit" written by the group of microstrip circuit writing of the university of qinghua is a detailed introduction of the basic principles and design methods of several semiconductor PIN diode-based phase shifters, such as a switch line type phase shifter, a loaded line type phase shifter, a reflective phase shifter, and the like. Regardless of the structure, the principle of the phase shifter based on the PIN diode is to utilize two different switch states of the PIN diode during forward bias and reverse bias to make a section of transmission line connected or disconnected to realize phase shift. Its advantage is: the volume is small, the digital signal control is easy to adopt, and the response speed is high; the disadvantages are that: the power consumption is large and the power capacity is small.
In the IEEE AP-S, article of Design of "High Power Phase Shifter with composite right and Left hand right-hand Transmission Line based on Design of High Power Phase Shifter" published by juqi et al in 2009 ("Design of High Power Capacity Phase Shifter with composite right and Left hand Transmission Line") this Phase Shifter also uses a PIN diode as a switch for Phase shift control, but unlike the conventional PIN diode Phase Shifter, the PIN diode switch is mounted on the finger of the hybrid right and Left hand structure, so that the current passing through the switch is only a part of the current flowing through the entire Phase Shifter, and thus its Power Capacity can be greatly increased. The advantages are that: the volume is small, the insertion loss is small, and the power capacity is large; the disadvantages are that: the difficulty in achieving large phase shift amounts is great.
Ellinger et al published a paper on IEEE Transmission on MTT of "Compact Reflective MMIC phase Shifter for C-Band Using a Lumped Element Coupler" in 5.2001 ("Compact Reflective-type phase-Shifter MMIC for C-Band Using a sampled-Element Coupler" Frank Ellinger, Rolf Vogt, Werner Bechtold, IEEE Transmission on Microwave Theory and Techniques, VOL.49, NO.5, MAY 2001). The phase shifter based on the gallium arsenide MMIC technology mainly adopts a reflection type structure, and obtains reflection coefficients of different phases by selecting different reflection terminals, so that phase shift is realized. The advantages are that: the volume is small, the manufacturing process is mature, and the response speed is high; the disadvantages are that: large insertion loss and small power capacity.
In 2002, Rebeiz et al published "radio frequency MEMS phase shifters" on IEEE microwaves: design and application "paper (" RF MEMS phase shifts: designs and applications "Rebeiz G.M, Guan-Long Tang, Hayden J.S, Microwave Magazine, IEEE Volume 3, Issue 2, June 2002 Page(s): 72-81). The MEMS phase shifter utilizes the MEMS radio frequency switch to change the size of a load capacitor connected between a central conduction band of a transmission line and the ground in parallel, thereby realizing the change of the size of the equivalent line capacitor of the whole structure, further changing the phase speed of microwave signals passing through and realizing the phase shifting. The advantages are that: the loss is small, and the power capacity is large; the disadvantages are that: the switching speed is slow, the reliability is low, and the service life is short.
The above documents show that ferrite phase shifters and MEMS phase shifters have a large power capacity but a slow switching speed; although the ferroelectric material phase shifter, the semiconductor diode phase shifter and the gallium arsenide MMIC phase shifter have small volume and high switching speed, the general power capacity is smaller; although the hybrid left-right hand transmission line phase shifter has small volume, high switching speed and large power capacity, it is difficult to realize a large phase shift amount.
Disclosure of Invention
An object of the present invention is to provide a microwave millimeter wave phase shifter with a planar microstrip transmission line structure, which overcomes the disadvantages of the existing microwave millimeter wave phase shifter such as large volume, large loss, large difficulty in phase shift.
The technical solution of the utility model is as follows:
the utility model discloses a microwave millimeter wave many branches load line phase shifter, it includes the parallelly connected microstrip transmission line constitutional unit of many branches at least, a serial communication port, the parallelly connected microstrip transmission line constitutional unit of every many branches is the microstrip transmission line of the parallelly connected a plurality of stub of carving on Printed Circuit Board (PCB), this microstrip transmission line route transmission thread, input, output, parallelly connected transmission branch line and ground connection short-circuit nail constitute, every transmission branch line cuts apart at one eighth wavelength apart from the thread to install the PIN switch of control transmission line unit electromagnetic wave phase place at the department of cutting off; the length of the transmission main line is one quarter wavelength, the width of the transmission main line is 0.2-2 mm, the length of the transmission branch line is three-eighths wavelength, the width of the transmission branch line is 0.2-1 mm, the distance between adjacent transmission branch lines is one quarter wavelength, the two ends of the transmission main line are respectively an input end and an output end of the transmission line, and the impedance of the input end and the impedance of the output end are both 50 ohms. The grounding short-circuit nail is realized by connecting a short-circuit piece with the ground of the third layer of the PCB by adopting the prior via hole technology, and the short-circuit piece is positioned at the left side or the right side of the transmission main line. The upper layer and the lower layer of the PCB are made of conductor copper with the thickness of 0.004mm, and the middle layer of the PCB is a dielectric substrate with the dielectric constant of 1.07-13.6.
In the multi-section load line phase shifter, the parallel transmission branch lines can be four straight or U-shaped stub lines which are positioned at two sides of the transmission main line and symmetrically distributed, and two transmission branch lines are positioned at each side to form a four-section load line phase shifter; the parallel transmission branch lines can also be two linear or U-shaped short stub lines which are positioned at the same side of the transmission main line to form a double-branch load line phase shifter; two or more than two microstrip transmission line structure units with multiple parallel branches can be cascaded according to different use requirements, so that the multi-bit microwave and millimeter wave digital phase shifter is formed.
In practical use, the operating frequency band and the center frequency are usually determined according to the use requirement, and then the widths of the input end, the output end, the main line and the branch line are calculated according to the characteristic impedance by using related formulas in the prior art (see microwave engineering, David m.pozar, Publishing House of Electronics Industry, 2006). Characteristic impedance Z of main line01Is obtained by the following formula:
Figure G2009201803435D00031
wherein
Figure G2009201803435D00032
For the desired amount of phase shift of the phase shifter, Z0Is the input-output end impedance. The characteristic impedance of the branch line is determined by the branch line structure, for the four-branch load line phase shifter, the characteristic impedance of one pair of branch nodes positioned at the same side of the main line can be made equal to the characteristic impedance of the input end, and the characteristic impedance of the other pair of branch nodesanti-Z02Can be driven by
Figure G2009201803435D00033
Obtaining; for a two-leg load line phase shifter, the characteristic impedance of the two legs is equal to the characteristic impedance of the input terminal. The microstrip line width W can be obtained by using the following calculation formula:
<math><mrow><mi>W</mi><mo>=</mo><mfenced open='{' close=''><mtable><mtr><mtd><mfrac><mrow><mn>8</mn><msup><mi>de</mi><mi>A</mi></msup></mrow><mrow><msup><mi>e</mi><mrow><mn>2</mn><mi>A</mi></mrow></msup><mo>-</mo><mn>2</mn></mrow></mfrac><mo>,</mo></mtd><mtd><mi>W</mi><mo>/</mo><mi>d</mi><mo>&lt;</mo><mn>2</mn></mtd></mtr><mtr><mtd><mfrac><mrow><mn>2</mn><mi>d</mi></mrow><mi>&pi;</mi></mfrac><mo>[</mo><mi>B</mi><mo>-</mo><mn>1</mn><mo>-</mo><mi>ln</mi><mrow><mo>(</mo><mn>2</mn><mi>B</mi><mo>-</mo><mn>1</mn><mo>)</mo></mrow><mo>+</mo><mfrac><mrow><msub><mi>&epsiv;</mi><mi>r</mi></msub><mo>-</mo><mn>1</mn></mrow><mrow><mn>2</mn><msub><mi>&epsiv;</mi><mi>r</mi></msub></mrow></mfrac><mo>{</mo><mi>ln</mi><mrow><mo>(</mo><mi>B</mi><mo>-</mo><mn>1</mn><mo>)</mo></mrow><mo>+</mo><mn>0.39</mn><mo>-</mo><mfrac><mn>0.61</mn><msub><mi>&epsiv;</mi><mi>r</mi></msub></mfrac><mo>}</mo><mo>]</mo><mo>,</mo></mtd><mtd><mi>W</mi><mo>/</mo><mi>d</mi><mo>></mo><mn>2</mn></mtd></mtr></mtable></mfenced><mo>,</mo></mrow></math> wherein, <math><mrow><mi>A</mi><mo>=</mo><mfrac><mi>Z</mi><mn>60</mn></mfrac><msqrt><mfrac><mrow><msub><mi>&epsiv;</mi><mi>r</mi></msub><mo>+</mo><mn>1</mn></mrow><mn>2</mn></mfrac></msqrt><mo>+</mo><mfrac><mrow><msub><mi>&epsiv;</mi><mi>r</mi></msub><mo>-</mo><mn>1</mn></mrow><mrow><msub><mi>&epsiv;</mi><mi>r</mi></msub><mo>+</mo><mn>1</mn></mrow></mfrac><mrow><mo>(</mo><mn>0.23</mn><mo>+</mo><mfrac><mn>0.11</mn><msub><mi>&epsiv;</mi><mi>r</mi></msub></mfrac><mo>)</mo></mrow><mo>,</mo></mrow></math> <math><mrow><mi>B</mi><mo>=</mo><mfrac><mrow><mn>377</mn><mi>&pi;</mi></mrow><mrow><mn>2</mn><mi>Z</mi><msqrt><msub><mi>&epsiv;</mi><mi>r</mi></msub></msqrt></mrow></mfrac><mo>,</mo></mrow></math> d is the thickness of the dielectric substrate, epsilonrBecause there are two cases of the dielectric constant of the dielectric substrate, e-2.718281828 is a natural logarithm, and Z is the characteristic impedance of the required transmission line, one case is selected for hypothetical calculation during calculation, verification is performed according to conditions after calculation, and another formula is selected for calculation if there is a contradiction.
The utility model provides a many node load line of microwave millimeter wave move looks ware and constitute a plurality of stub lines of connecting in parallel on transmission line unit. According to the transmission line theory, the voltage and the current on the transmission line are formed by overlapping incident waves and reflected waves, and the smaller the intensity of the reflected waves is, the smaller the standing-wave ratio of the transmission line is, and the smaller the energy loss of the transmission line is. The utility model discloses in, the interval that moves adjacent transmission branch line that lies in the thread homonymy on the looks ware is the quarter wavelength, and the wave path difference of the electromagnetic wave that reflects back through adjacent transmission branch line is half wavelength to weaken after making the reflection wave opposite phase stack, consequently should move the ware loss little. Meanwhile, the phase shifter has many other advantages, such as small volume, flexible structure, easy manufacture, and design according to different frequency bands and phase shift requirements, can effectively overcome the defects of large volume, large loss and large difficulty in realizing large phase shift amount of the traditional phase shifter, and has great advantages in radar and phased array antennas.
The following is further described by way of examples and figures.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a four-branch load line phase shifter according to the present invention.
Fig. 2 is a view taken along direction a of fig. 1.
Fig. 3 is a phase shift degree graph of a four-branch load line phase shifter according to embodiment 1 of the present invention. Wherein the abscissa represents frequency and the ordinate represents degree of phase shift. The coordinate names of fig. 8 below are the same.
Fig. 4 is a schematic diagram of voltage standing wave ratio when one pair of switches on the four-branch load line phase shifter is turned off and the other pair of switches is turned on according to embodiment 1 of the present invention, in which the abscissa represents frequency and the ordinate represents voltage standing wave ratio. The coordinate names of fig. 5, 9, and 10 are the same as those of the following.
Fig. 5 is a voltage standing wave ratio graph when a lower pair of switches is turned off and an upper pair of switches is turned on in the four-branch load line phase shifter according to embodiment 1 of the present invention.
FIG. 6 is a schematic structural view of another embodiment of the dual-branch load line phase shifter of the present invention
Fig. 7 is a view from direction B of fig. 6.
Fig. 8 is a schematic diagram of phase shift degrees of a dual-branch load line phase shifter according to embodiment 3 of the present invention.
Fig. 9 is a schematic diagram of the voltage standing wave ratio when the dual-leg load line phase shifter switch of embodiment 3 of the present invention is turned off.
Fig. 10 is a schematic diagram of voltage standing wave ratio when the dual-branch load line phase shifter switch according to embodiment 3 of the present invention is closed.
Detailed Description
Example 1
Referring to fig. 1 and 2, a plurality of microstrip transmission line structure units connected in parallel are arranged on a square PCB board 1, the PCB board is composed of an upper layer of metal copper and a lower layer of metal copper and a middle dielectric substrate, the upper layer of metal copper is used for forming a transmission line, and the lower layer of metal forms the ground of the transmission line. The transmission main line 7 is linear and is positioned in the middle of the square PCB 1, and the four transmission branch lines 2 are also linear and are connected in parallel at two sides of the transmission main line; and 3, a grounding short-circuit nail, namely, a via hole technology is adopted to connect the upper layer metal and the lower layer metal. Input and output ports 4, 5 are respectively arranged at two ends of the transmission main line 7; four transmission branches connected in parallel are respectively provided with a PIN switch 6 for controlling the phase shifter. In this embodiment, the thickness of the upper and lower conductor copper of the PCB is 0.004mm, the thickness of the middle dielectric substrate (Rogers RT/duroid 6006) is 0.254mm, and the dielectric constant is 6.15. The length of the main transmission line is 3.1mm, and the width is 0.29 mm. The length of the left pair of transmission branch lines is 5.28mm, the width is 0.18mm, and the distance between the two lines is 3.1 mm; the right pair of transmission legs was 5.13mm long, 0.28mm wide, and 2.9mm apart. Two pairs of PIN switches are arranged at symmetrical positions of the two pairs of transmission branch lines, the distances between the PIN switches and the main line are respectively 1.71mm (left side) and 1.73mm (right side), and the size of each PIN switch is 0.35mm multiplied by 0.13 mm. The line width of the input end and the output end is 0.28 mm. The left side of the main line is provided with a short-circuit piece with the size of 0.5mm multiplied by 0.5mm, the distance between the center of the short-circuit piece and the side edge of the transmission main line is 0.35mm, and the distance between the center of the short-circuit piece and the side edge of the transmission main line is equal to the distance between two transmission branch lines arranged on the same side, the short-circuit piece is connected with a lower-layer ground wire through 1 short-circuit nail (solid cylindrical metal copper, the radius is 0.1mm, the height is 0.254mm), the short-circuit nail vertically penetrates through the dielectric layer, the projection of the short-circuit nail on the upper-layer metal.
The simulation test of the four-node load line phase shifter of the present embodiment is performed by ie3d software, and the results are shown in fig. 3, fig. 4, and fig. 5. As can be seen, the standing wave ratio of the phase shifter is less than 1.3 when the switch is open and closed. The electrical properties that can be achieved by this embodiment are: the central frequency is 10.8GHz, the working bandwidth is 1GHz, and the two pairs of switch states change simultaneously and the time-shifting phase is 22.5 degrees.
Example 2
The characteristics of the PCB board used in this embodiment 2 are the same as those of embodiment 1, and the multi-node parallel microstrip transmission line structure unit is also the same as that of embodiment 1. The specific dimensions of this example are as follows: the length of the main transmission line is 2.5mm and the width is 0.32 mm. The left side and the right side of the transmission main line are respectively connected with two identical transmission branch lines in parallel, the length of a pair of transmission branch lines on the left side is 5.26mm, the width is 0.41mm, and the distance is 2.3 mm; the right pair of transmission legs was 5.58mm in length, 0.19mm in width and 2.5mm apart. Two pairs of PIN switches are arranged at symmetrical positions of the two pairs of transmission branch lines, the distances between the PIN switches and the main line are respectively 1.64mm (left side) and 1.73mm (right side), and the used switches are the same as the first embodiment. The input port and the output port are respectively positioned at two ends of the main line, and the line width is 0.28 mm.
The simulation test of the four-branch load line phase shifter of the present embodiment by using ie3d software shows that: the standing wave ratio of the phase shifter is less than 1.38 when the switch is opened and closed. The electrical performance that this embodiment can realize is: the central frequency is 10.8GHz, the working bandwidth is 1GHz, and the phase shift is 45 degrees when the states of the two pairs of switches are changed simultaneously.
Example 3
Referring to fig. 6 and 7, the characteristics of the PCB board used in this embodiment 3 are the same as those of embodiment 1. The microstrip transmission line structure unit provided with a plurality of nodes connected in parallel is different from the embodiment 1. Two identical U-shaped transmission branch lines 2 are connected in parallel on the same side of the transmission main line 7, and the rest of the structure is the same as that of embodiment 1. The specific dimensions of this example are: the length of the transmission main line is 7.1mm, and the width of the transmission main line is 0.5 mm; the transmission branch had a length of 15.3mm and a width of 0.28mm, spaced apart by 7.1 mm. A pair of PIN switches are respectively installed at symmetrical positions of the transmission branch lines, the positions are 5.5mm away from the main line, and the switches are the same as the first embodiment. The structure and arrangement of the ground shorting pin are also the same as in embodiment 1. The input port and the output port are respectively positioned at two ends of the main line, and the line width is 0.28 mm.
The simulation test of the dual-branch load line phase shifter of the present embodiment is performed by ie3d software, and the results are shown in fig. 8, 9 and 10. As can be seen, the standing wave ratio of the phase shifter is less than 1.5 when the switch is open and closed. The electrical properties that can be achieved by this embodiment are: the central frequency is 4GHz, the working bandwidth is 0.4GHz, and the phase shift is 90 degrees when the states of the two switches are changed simultaneously.

Claims (5)

1. A microwave millimeter wave multi-node load line phase shifter at least comprises a multi-node parallel microstrip transmission line structure unit, and is characterized in that each multi-node parallel microstrip transmission line structure unit is a microstrip transmission line which is engraved on a printed circuit board and is connected with a plurality of stub lines in parallel, the microstrip transmission line is composed of a transmission main line, an input end, an output end, parallel transmission branch lines and a grounding short-circuit nail, each transmission branch line is cut off at a wavelength which is one eighth of the main line, and a PIN switch for controlling the electromagnetic wave phase of the transmission line unit is installed at the cut-off position; the length of the transmission main line is one quarter wavelength, the width of the transmission main line is 0.2-2 mm, the length of the transmission branch line is three-eighths wavelength, the width of the transmission branch line is 0.2-1 mm, the distance between adjacent transmission branch lines is one quarter wavelength, the two ends of the transmission main line are respectively an input end and an output end of the transmission line, and the impedance of the input end and the impedance of the output end are both 50 ohms.
2. The microwave and millimeter wave multi-stub load line phase shifter of claim 1, wherein the upper and lower layers of said printed circuit board are of conductive copper of 0.004mm thickness and the middle is a dielectric plate of 1.07-13.6 dielectric constant.
3. The microwave and millimeter wave multi-stub load line phase shifter of claim 1, wherein the parallel transmission branches are four straight or U-shaped stubs located on both sides of the transmission main line, symmetrically distributed, two on each side, to form a four-stub load line phase shifter.
4. The microwave and millimeter wave multi-stub load line phase shifter of claim 1, wherein the parallel transmission branch lines are two straight or U-shaped stub lines, which are located on the same side of the transmission main line, to form a dual-stub load line phase shifter.
5. The microwave millimeter wave multi-stub load line phase shifter according to claim 1, wherein the two or more multi-stub parallel microwave millimeter wave microstrip transmission line structure units are cascaded to form a multi-bit microwave millimeter wave digital phase shifter.
CN2009201803435U 2009-11-06 2009-11-06 Microwave and millimeter wave multi-stub load line phase shifter Expired - Fee Related CN201623242U (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420351A (en) * 2012-01-04 2012-04-18 镇江中安通信科技有限公司 Power dividing phase shifter
CN103594802A (en) * 2013-11-21 2014-02-19 天津中兴智联科技有限公司 Butler matrix structure
CN104201440A (en) * 2014-08-21 2014-12-10 摩比天线技术(深圳)有限公司 Dielectric phase shifter of base station electric tunable antenna
WO2015042974A1 (en) * 2013-09-30 2015-04-02 华为技术有限公司 Broadband phase shifter and broadband beam-forming network
CN106356593A (en) * 2016-08-31 2017-01-25 安徽赛福电子有限公司 High-accuracy and low-loss loaded line microwave phase shifter
CN110459838A (en) * 2019-08-16 2019-11-15 深圳市闻耀电子科技有限公司 Phase shifter, phased array antenna equipment and phase-moving method
CN110690536A (en) * 2018-08-29 2020-01-14 电子科技大学 Terahertz phase shifter based on WR3 standard waveguide loading phase-shifting microstructure
CN111786058A (en) * 2020-07-03 2020-10-16 北京华镁钛科技有限公司 Low-loss phase shifter
CN114246964A (en) * 2020-09-21 2022-03-29 陕西青朗万城环保科技有限公司 Multimode mixed cavity adjusting method and control system thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420351A (en) * 2012-01-04 2012-04-18 镇江中安通信科技有限公司 Power dividing phase shifter
CN102420351B (en) * 2012-01-04 2014-06-11 镇江中安通信科技有限公司 Power dividing phase shifter
WO2015042974A1 (en) * 2013-09-30 2015-04-02 华为技术有限公司 Broadband phase shifter and broadband beam-forming network
CN103594802A (en) * 2013-11-21 2014-02-19 天津中兴智联科技有限公司 Butler matrix structure
CN103594802B (en) * 2013-11-21 2015-11-18 天津中兴智联科技有限公司 Butler matrix structure
CN104201440A (en) * 2014-08-21 2014-12-10 摩比天线技术(深圳)有限公司 Dielectric phase shifter of base station electric tunable antenna
CN106356593A (en) * 2016-08-31 2017-01-25 安徽赛福电子有限公司 High-accuracy and low-loss loaded line microwave phase shifter
CN110690536A (en) * 2018-08-29 2020-01-14 电子科技大学 Terahertz phase shifter based on WR3 standard waveguide loading phase-shifting microstructure
CN110690536B (en) * 2018-08-29 2021-09-03 电子科技大学 Terahertz phase shifter based on WR3 standard waveguide loading phase-shifting microstructure
CN110459838A (en) * 2019-08-16 2019-11-15 深圳市闻耀电子科技有限公司 Phase shifter, phased array antenna equipment and phase-moving method
CN111786058A (en) * 2020-07-03 2020-10-16 北京华镁钛科技有限公司 Low-loss phase shifter
CN111786058B (en) * 2020-07-03 2021-07-02 北京华镁钛科技有限公司 Low-loss phase shifter
CN114246964A (en) * 2020-09-21 2022-03-29 陕西青朗万城环保科技有限公司 Multimode mixed cavity adjusting method and control system thereof

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