CN101640317A - Antenna capable of reconstituting resonance frequency and containing MEMS switch and manufacture thereof - Google Patents
Antenna capable of reconstituting resonance frequency and containing MEMS switch and manufacture thereof Download PDFInfo
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- CN101640317A CN101640317A CN200910053263A CN200910053263A CN101640317A CN 101640317 A CN101640317 A CN 101640317A CN 200910053263 A CN200910053263 A CN 200910053263A CN 200910053263 A CN200910053263 A CN 200910053263A CN 101640317 A CN101640317 A CN 101640317A
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Abstract
The invention discloses an antenna capable of reconstituting resonance frequency and containing MEMS (micro electro mechanical system) switch and manufacture thereof, belonging to the crossed technical field of microwave and micro-electronics. MEMS technology and IC technology are used, the antenna is manufactured on a high-resistance silicon slice whose size is 10mm*10mm by nine steps of cleaningand thermally oxidizing a substrate, electroplating a golden layer, electroplating to increase the height of a first bridge pier to a fourth bridge pier, depositing a silicon nitride thin film, coating a sacrificial layer, evaporating an aluminum-silicon alloy film, corroding the aluminum-silicon alloy film, removing the sacrificial layer and welding a gasket. The antenna has the advantages of small volume, compact structure, use of MEMS switch for realizing antenna frequency reconstitution, and unchanged irradiation direction image of the antenna on each resonance frequency during frequencyreconstitution. The manufacture method of the antenna has the advantages of basis on a micro electro processing platform, simple technology, high processing precision, integration with IC, suitabilityfor batch production and low cost. The antenna is suitable for searching radar phase control target searching and tracing antenna, mechanical or missile-borne antenna and anti-interference GPS positioning antenna, is especially suitable for integrating RF devices and contributes to development of future mobile communication.
Description
Technical field
The present invention relates to the reconfigurable antenna of resonance frequency and the making thereof of a kind of MEMS of containing (microelectron-mechanical) switch, definitely say, relate to a kind of reconstruct that utilizes mems switch and IC technology to realize antenna resonant frequency, belong to microwave and microelectronics crossed technical.
Background technology
The characteristics of reconfigurable antenna are that the same antenna or array pass through dynamically to change its physical structure or size, make its function with a plurality of antennas, are equivalent to physics bore of a plurality of antenna duplexers.Existing reconfigurable antenna is transferred characteristic for the electricity of realizing operating frequency, adopts switching devices such as PIN switching diode, FET to change the resonance length of antenna, thereby changes the resonance frequency of antenna.The frequency electricity of these reconfigurable antennas transfers characteristic very responsive to the switch Devices Characteristics, and during frequency reconstruct, antenna pattern changes easily.These reconfigurable antennas are produced on the printed circuit board (PCB) (PCB) more, and power consumption and volume are bigger, are difficult to integrated.
Mems switch can make the structure of radio frequency, microwave, millimetric wave device and circuit and the change that characteristic has an essence thereof, its outstanding feature: low-loss, high-isolation, volume are little, low cost of manufacture, be easy to IC, MMIC integrated, and the biasing networks of mems switch can be widely used in the large-scale aerial array, can not disturb or the antenna pattern of deterioration antenna, also consumed power not.To sum up, mems switch is an ideal element of making reconfigurable antenna.The present invention adopts mems switch to realize the reconstruct of antenna, and this technology can either realize the change of the resonance frequency of antenna, and the antenna pattern of antenna is not changed at each adjustable resonance point.
Summary of the invention
First technical problem that the present invention will solve is to release a kind of reconfigurable antenna of resonance frequency that contains mems switch, this antenna has volume small, compact conformation, the advantage that antenna does not change at the antenna pattern of each resonance frequency when utilizing mems switch to realize the frequency reconstruct of antenna and frequency reconstruct.
For solving above-mentioned technical problem, the present invention adopts following technical scheme.This antenna is the reconfigurable antenna of the resonance frequency that contains mems switch that is structured in the co-plane waveguide on the high resistant silicon chip substrate with MEMS technology and IC technology.
Now describe technical scheme of the present invention in conjunction with the accompanying drawings in detail.A kind of reconfigurable antenna of resonance frequency that contains mems switch, it is characterized in that, contain substrate 3, first, second, the 3rd, the 4th, the 5th, the 6th, the 7th gold medal film 60,61,62,63,64,65,66, first, second, the 3rd primary radiation slit 40,41,42, first, second, the 3rd, the 4th collateral branch slit 50,51,52,53, first, two mems switches 1,2, signal/bias voltage input pad 80 and first, second ground mat 90,91, substrate 3 is high resistant silicon chips, central shaft 0 is the central axis of substrate 3, deposit first on the surface of substrate 3, second, the 3rd, the 4th, the 5th, the 6th, the 7th gold medal film 60,61,62,63,64,65,66, the first gold medal film, 60 cloth are listed in the both sides of central shaft 0, the left-half of the first gold medal film 60 is the right half part symmetry of the symmetry axis and the first gold medal film 60 with central shaft 0, the 6th gold medal film 65, the 4th gold medal film 63, the 3rd gold medal film 62 and the 7th gold medal film 66, five metals film 64, the second gold medal film 61 cloth respectively is listed in the both sides of central shaft 0, the first primary radiation slit 40 is clipped between the 4th gold medal film 63 and the 6th gold medal film 65, the second primary radiation slit 41 is clipped in the first gold medal film 60, between the 6th gold medal film 65 and the 7th gold medal film 66, the 3rd primary radiation slit 42 is clipped between five metals film 64 and the 7th gold medal film 66, first, second, the 3rd primary radiation slit 40,41,42 respectively with the 4th gold medal film 63, the top of the first gold medal film 60 and five metals film 64 is connected, the second primary radiation slit, 41 cloth are listed in the both sides of central shaft 0, the left-half in the second primary radiation slit 41 is the right half part symmetry in the symmetry axis and the second primary radiation slit 41 with central shaft 0, the first primary radiation slit 40 and the 3rd primary radiation slit 42 cloth respectively are listed in the both sides of central shaft 0, the first collateral branch slit 50 is clipped between the 3rd gold medal film 62 and the 4th gold medal film 63, the second collateral branch slit 51 is clipped between the second gold medal film 61 and the five metals film 64, the 3rd collateral branch slit 52 is clipped between the first gold medal film 60 and the 4th gold medal film 63, the 4th collateral branch slit 53 is clipped between the first gold medal film 60 and the five metals film 64, the first collateral branch slit 50, the 4th collateral branch slit 53 and the second collateral branch slit 51, the 3rd collateral branch slit 52 cloth respectively is listed in the both sides of central shaft 0, first mems switch 1 contains first, two bridge piers 20,21, the first bridge film 10 and first bias pad 30, the first bridge film 10 is connected across between first bridge pier 20 and second bridge pier 21 in the mode that is suspended from first bias pad, 30 tops, second mems switch 2 contains the 3rd, four bridge piers 22,23, the second bridge film 11 and second bias pad 31, the second bridge film 11 is connected across between the 3rd bridge pier 22 and the 4th bridge pier 23 in the mode that is suspended from second bias pad, 31 tops, be deposited with first silicon nitride film 70 and second silicon nitride film 71 on the surface of first bias pad 30 and second bias pad 31 respectively, first mems switch 1 and second mems switch 2 cloth respectively are listed in the both sides of central shaft 0, signal/bias voltage input pad 80 is positioned at the bottom of the first gold medal film 60, first ground mat 90 and second ground mat 91 lay respectively at the bottom of the 3rd gold medal film 62 and the second gold medal film 61, first ground mat 90 and second ground mat 91 cloth respectively are listed in the both sides of central shaft 0, the 6th gold medal film 65, the 4th gold medal film 63, the 3rd gold medal film 62, the first collateral branch slit 50, the 4th collateral branch slit 53, first mems switch 1 and first ground mat 90 with central shaft 0 be symmetry axis respectively with the 7th gold medal film 66, five metals film 64, the second gold medal film 61, the second collateral branch slit 51, the 3rd collateral branch slit 5, second mems switch 2 and second ground mat, 91 symmetries.
Technical scheme of the present invention is further characterized in that, the size of described high resistant silicon chip, thickness and resistivity are respectively 10mm * 10mm, 525 μ m and 3000 Ω cm, first, second, third, fourth, the thickness of the 5th, the 6th, the 7th gold medal film 60,61,62,63,64,65,66 is 2 μ m, the first bridge film 10 and the second bridge film 11 are alusil alloy films, the height that the thickness of described alusil alloy film and silicon content are respectively 0.7 μ m～0.9 μ m and 4%, the first～the 4th bridge pier 20～23 is 2 μ m.
Second technical problem that the present invention will solve is to release a kind of method for preparing described antenna.
For solving above-mentioned technical problem, the present invention adopts following technical scheme, existing explanation in detail in conjunction with the accompanying drawings.
A kind of preparation method who contains the reconfigurable antenna of resonance frequency of mems switch is characterized in that, as substrate 3, whole process of preparation adopts the technology with silicon chip microwave integrated circuit process compatible with the high resistant silicon chip, concrete processing step:
The cleaning of first step substrate 3 and thermal oxidation
With a liquid, the prescription with 3, numbers liquid of No. two liquid cleaning substrates is 27%NH more earlier
4OH: 30%H
2O
2: the weight ratio of deionized water=1: 2: 5, the prescription of No. two liquid are 37%HCl: 30%H
2O
2: deionized water=1: 2: 8, adopt thermal oxidation process then, growthing silica layer on a surface of substrate 3, thickness are 1 μ m;
The second step electrogilding layer
In the silicon dioxide layer of the first step growth Gold plated Layer that powers on, thickness is 2 μ m, as first～the 7th gold medal film 60～66, first～the 4th bridge pier 20～23 and first, second bias pad 30,31, the not gold-plated zone that is clipped between first～the 7th gold medal film 60～66 is first～the 3rd primary radiation slit 40～42 and first～the 4th collateral branch slit 50～53;
The 3rd step was electroplated the height that increases by first～the 4th bridge pier 20～23
First～the 4th bridge pier, 20～23 position electrogilding layers on the substrate of handling through second step 3 make the height of first～the 4th bridge pier 20～23 increase to 2 μ m;
The 4th step deposition silicon nitride film
Deposition silicon nitride film on the surface of first, second bias pad 30,31, thickness are 300nm, as first, second silicon nitride film 70,71, form insulating barrier on the surface of first, second bias pad 30,31 respectively;
The 5th step coating sacrifice layer
Apply sacrifice layer on the substrate of handling through the 4th step 3, thickness is 2 μ m, carries out photoetching in the mode that keeps the sacrifice layer on first, second silicon nitride film 70,71 on first, second bias pad 30,31, removes the sacrifice layer on the substrate 3;
The 6th step evaporation alusil alloy film
To place 5 * 10 through the substrate 3 that the 5th step handled
-5Under the vacuum degree of Torr, deposit alusil alloy film, the thickness of alusil alloy film are 0.7 μ m～0.9 μ m, and the silicon content of alusil alloy film is 4%;
The 7th step corrosion alusil alloy film
To the processing of corroding the alusil alloy film through the 6th substrate 3 that goes on foot processing, erode alusil alloy film on the substrate 3 in the mode that keeps the alusil alloy film on first mems switch 1 and second mems switch 2, uncorroded alusil alloy film is exactly the first bridge film 10 and the second bridge film 11, the first bridge film 10 is connected across between first bridge pier 20 and second bridge pier 21, and the second bridge film 11 is connected across between the 3rd bridge pier 22 and the 4th bridge pier 23;
The 8th step was removed sacrifice layer
With the sacrifice layer of plasma etching removal on first, second silicon nitride film 70,71 on first, second bias pad 30,31 on the substrate 3 of the 7th step processing, make the first bridge film 10 and the second bridge film 11 be suspended from the top of first bias pad 30 and second bias pad 31 respectively;
The 9th step welding gasket
Technical scheme of the present invention is further characterized in that the size of described high resistant silicon chip, thickness and resistivity are respectively 10mm * 10mm, 525 μ m and 3000 Ω cm.
Compare with background technology, the present invention has following outstanding feature:
1, the present invention utilizes the substrate of high resistant silicon chip as antenna, compact conformation, utilize mems switch to substitute the resonance frequency reconstruct that switching devices such as traditional PIN switching diode, variable capacitance diode, FET are realized antenna, simple in structure, size is little, 10mm * 10mm only, in addition, the mechanical strength of silicon materials and perfect heat-dissipating, based on the microelectronics processing platform, preparation technology is simple, have concurrently machining accuracy high and can with the integrated advantage of IC, be suitable for producing in batches and reducing cost, the technology integrated for wireless communication line of future generation and antenna lays the foundation.
2, antenna of the present invention can be implemented in the reconstruct that frequency is 13.1GHz and two frequencies of 12.3GHz, and at these two frequency places, this antenna has similar antenna pattern and lower reflection loss.
Description of drawings
Fig. 1 is the structural representation that contains the reconfigurable antenna of resonance frequency of mems switch of the present invention.
Fig. 2 S that contains the reconfigurable antenna of resonance frequency of mems switch of the present invention
11Parameterized graphics: (1) two mems switch is in ON state; (2) two mems switches are in OFF state.
Fig. 3 is the antenna pattern that contains the reconfigurable antenna of resonance frequency of mems switch of the present invention when two mems switches are in ON state: (1) E face; (2) H face.
Embodiment
In above-mentioned summary of the invention, two technical schemes of the present invention have been done detailed explanation, these two schemes are exactly concrete execution mode, i.e. embodiment.For avoiding repetition, only enumerate the operation principle that contains the reconfigurable antenna of resonance frequency of mems switch of the present invention herein.
The structural representation of antenna of the present invention is seen accompanying drawing 1.Consider for multiple antenna, coupling between the adjacent antenna is also essential minimum, and the slit of co-plane waveguide feedback has bigger bandwidth, good impedance matching, tangible advantages such as lower radiation loss and coupling mutually, easy and microwave monolithic integrated circuit are integrated in one.Moreover, in present communication system, need utilize switch to realize the reconstruct of antenna, with the radianting capacity of raising antenna, so switch is vital circuit element.The present invention will have desirable switching characteristic, the microelectron-mechanical of high on-off ratio, high-isolation and low insertion loss (MEMS) switch is added between first～the 3rd primary radiation slit 40～42: first mems switch 1 is connected across between the first primary radiation slit 40 and the second primary radiation slit 41, and second mems switch 2 is connected across between the second primary radiation slit 41 and the 3rd primary radiation slit 42.The switch main composition of using is as signal transmssion line with CPW, first, second bridge film 10,11 of two-terminal-grounding is suspended from the top of first, second bias pad 30,31, change of the change of radiating slot length symmetrically by mems switch, and the loading of the symmetry of mems switch is relatively easy for the selection of antenna feed point with the resonance frequency of realization antenna.The required Dc bias of switch adds via signal/bias voltage input pad 80 feedbacks, and like this, Dc bias input and aerial signal input can a shared signal/bias voltage input pads 80, and the structure of antenna is simplified.
Signal source is loaded on the antenna by signal/bias voltage input pad 80, signal cuts off conduction current by first, second, third, fourth collateral branch slit 50,51,52,53 of first, second, third primary radiation slit 40,41,42 and below thereof, produce the displacement current exciting field, to the space radiation electromagnetic wave.Bias generator one end loads by signal/bias voltage input pad 80, be applied on first, second bias pad 30,31 via the first gold medal film 60, the bias generator other end applies through first ground mat 90 or second ground mat 91, via second, third, the 6th, the 7th gold medal film 61,62,65,66 and the first～four bridge pier 20～23 be applied on first, second bridge film 10,11.When not applying bias voltage, when promptly the voltage of bias generator was 0V, first, second bridge film 10,11 was not drop-down, and the resonance frequency of antenna is by the gap length sum decision in first, second, third primary radiation slit 40,41,42.When the applying voltage and be 35V of bias generator, first, second bridge film 10,11 is drop-down, be close to first, second bias pad 30,31 respectively, owing on first, second bias pad 30,31 first, second silicon nitride film 70,71 is arranged, therefore bias generator can be by short circuit, but the distributed capacitance between first, second bridge film 10,11 and first, second bias pad 30,31 increases greatly.For microwave signal, the big electric capacity of formation is equivalent to make bridge film and bias pad short circuit, and the resonance frequency of antenna is only determined by the gap length in the second primary radiation slit 41.The resonance frequency of antenna is definite by formula (1),
f
r＝＝c/[2s(ε
r)]
1/2(1)
In the formula, f
rFor the resonance frequency of antenna (unit: GHz), c be the light velocity (unit: meter per second), ε
rBe the dielectric constant of silicon chip, s is a radiation resonant slot total length (unit: rice).Know the resonance frequency f of antenna by formula (1)
rIt is the function of radiation resonant slot total length s.The action of mems switch has changed radiation resonant slot total length s, makes the resonance frequency f of antenna
rChange thereupon.
The advantage of the reconfigurable antenna of resonance frequency of this mems switch is: can produce bidirectional radiation.With first, second, third primary radiation slit 40,41,42 of wide seam as radiation element, the resonant bandwidth broad of antenna; The excitation of parasitic radiation and surface wave all a little less than, to antenna radiation efficiency reduce influence less; The antenna global shape is triangular in shape, and compact conformation like this helps to reduce the area of substrate 3; In order to obtain wide frequency band, below three primary radiation slits, increased by the 3rd, the 4th collateral branch slit 52,53.When first, second bridge film 10,11 is drop-down, the resonance frequency that records antenna is 13.1GHz, when first, second bridge film 10,11 is not drop-down, the resonance frequency that records antenna is 12.3GHz, see Fig. 2, therefore realized the restructural of the resonance frequency of antenna, and the antenna pattern of these two frequencies is very similar, sees Fig. 3.From antenna pattern as can be seen, the 3dB axial ratio bandwidth of radiation characteristic test shows antenna is about 0.6%, gain to be that 5dB, antenna are omnidirectional radiation, from the directional diagram curve as can be seen, its half power lobe width 2 θ
0.5, about ± 45 °, radiation characteristic is good greatly.
The present invention is mainly used to prepare the reconfigurable antenna of the resonance frequency that contains mems switch, helps to reduce the radio-frequency (RF) component number of phased array radar system and the size of dwindling antenna.The present invention uses in the phased antenna array, can realize the multiband, broadband, small size of antenna, different radiation fields etc.The application of the reconfigurable antenna of resonance frequency that contains mems switch that the present invention makes or potential application are that radar is controlled target search and tracking antenna, machinery or missile-borne antenna, jamproof GPS positioning antenna mutually.The performance of reconfigurable antenna makes revolutionary variations such as its communication that may support satellite of future generation and land application, intelligent label and fuzzy radar.Moreover it is integrated that the reconfigurable antenna of resonance frequency that contains mems switch of the present invention can be used for radio-frequency devices, for the development of following mobile communication contributes.
Claims (4)
1, a kind of reconfigurable antenna of resonance frequency that contains mems switch, it is characterized in that, contain substrate (3), first, second, the 3rd, the 4th, the 5th, the 6th, the 7th gold medal film (60,61,62,63,64,65,66), first, second, the 3rd primary radiation slit (40,41,42), first, second, the 3rd, the 4th collateral branch slit (50,51,52,53), first, two mems switches (1,2), signal/bias voltage input pad (80) and first, second ground mat (90,91), substrate (3) is the high resistant silicon chip, central shaft (O) is the central axis of substrate (3), deposit first on the surface of substrate (3), second, the 3rd, the 4th, the 5th, the 6th, the 7th gold medal film (60,61,62,63,64,65,66), first gold medal film (60) cloth is listed in the both sides of central shaft (O), the left-half of the first gold medal film (60) is the right half part symmetry of the symmetry axis and the first gold medal film (60) with central shaft (O), the 6th gold medal film (65), the 4th gold medal film (63), the 3rd gold medal film (62) and the 7th gold medal film (66), five metals film (64), the second gold medal film (61) cloth respectively is listed in the both sides of central shaft (O), the first primary radiation slit (40) is clipped between the 4th gold medal film (63) and the 6th gold medal film (65), the second primary radiation slit (41) is clipped in the first gold medal film (60), between the 6th gold medal film (65) and the 7th gold medal film (66), the 3rd primary radiation slit (42) is clipped between five metals film (64) and the 7th gold medal film (66), first, second, the 3rd primary radiation slit (40,41,42) respectively with the 4th gold medal film (63), the top of the first gold medal film (60) and five metals film (64) is connected, second primary radiation slit (41) cloth is listed in the both sides of central shaft (O), the left-half in the second primary radiation slit (41) is the right half part symmetry in the symmetry axis and the second primary radiation slit (41) with central shaft (O), the first primary radiation slit (40) and the 3rd primary radiation slit (42) cloth respectively are listed in the both sides of central shaft (O), the first collateral branch slit (50) is clipped between the 3rd gold medal film (62) and the 4th gold medal film (63), the second collateral branch slit (51) is clipped between the second gold medal film (61) and the five metals film (64), the 3rd collateral branch slit (52) is clipped between the first gold medal film (60) and the 4th gold medal film (63), the 4th collateral branch slit (53) is clipped between the first gold medal film (60) and the five metals film (64), the first collateral branch slit (50), the 4th collateral branch slit (53) and the second collateral branch slit (51), the 3rd collateral branch slit (52) cloth respectively is listed in the both sides of central shaft (O), first mems switch (1) contains first, two bridge piers (20,21), the first bridge film (10) and first bias pad (30), the first bridge film (10) is connected across between first bridge pier 20 and second bridge pier 21 in the mode that is suspended from first bias pad, 30 tops, second mems switch (2) contains the 3rd, four bridge piers (22,23), the second bridge film (11) and second bias pad (31), the second bridge film (11) is connected across between the 3rd bridge pier (22) and the 4th bridge pier (23) in the mode that is suspended from second bias pad (31) top, be deposited with first silicon nitride film (70) and second silicon nitride film (71) on the surface of first bias pad (30) and second bias pad (31) respectively, first mems switch (1) and second mems switch (2) cloth respectively are listed in the both sides of central shaft (O), signal/bias voltage input pad (80) is positioned at the bottom of the first gold medal film (60), first ground mat (90) and second ground mat (91) lay respectively at the bottom of the 3rd gold medal film (62) and the second gold medal film (61), first ground mat (90) and second ground mat (91) cloth respectively are listed in the both sides of central shaft (O), the 6th gold medal film (65), the 4th gold medal film (63), the 3rd gold medal film (62), the first collateral branch slit (50), the 4th collateral branch slit (53), first mems switch (1) and first ground mat (90) with central shaft (O) be symmetry axis respectively with the 7th gold medal film (66), five metals film (64), the second gold medal film (61), the second collateral branch slit (51), the 3rd collateral branch slit (5), second mems switch (2) and second ground mat (91) symmetry.
2, the reconfigurable antenna of resonance frequency that contains mems switch according to claim 1, it is characterized in that, the size of described high resistant silicon chip, thickness and resistivity are respectively 10mm * 10mm, 525 μ m and 3000 Ω cm, first, second, the 3rd, the 4th, the 5th, the 6th, the 7th gold medal film (60,61,62,63,64,65,66) thickness is 2 μ m, the first bridge film (10) and the second bridge film (11) are the alusil alloy films, the height that the thickness of described alusil alloy film and silicon content are respectively 0.7 μ m～0.9 μ m and 4%, the first～the 4th bridge pier (20～23) is 2 μ m.
3, the described preparation method who contains the reconfigurable antenna of resonance frequency of mems switch of claim 1 is characterized in that, as substrate (3), whole process of preparation adopts the technology with silicon chip microwave integrated circuit process compatible with the high resistant silicon chip, concrete processing step:
The cleaning and the thermal oxidation of first step substrate (3)
With a liquid, clean substrate (3) with No. two liquid more earlier, the prescription of a liquid is 27%NH
4OH: 30%H
2O
2: the weight ratio of deionized water=1: 2:5, the prescription of No. two liquid are 37%HCl: 30%H
2O
2: deionized water=1: 2: 8, adopt thermal oxidation process then, growthing silica layer on a surface of substrate (3), thickness are 1 μ m;
The second step electrogilding layer
In the silicon dioxide layer of the first step growth Gold plated Layer that powers on, thickness is 2 μ m, as first～the 7th gold medal film (60～66), first～the 4th bridge pier (20～23) and first, second bias pad (30,31), the not gold-plated zone that is clipped between first～the 7th gold medal film (60～66) is first～the 3rd primary radiation slit (40～42) and first～the 4th collateral branch slit (50～53);
The 3rd step was electroplated the height that increases by first～the 4th bridge pier (20～23)
First～the 4th bridge pier (20～23) the position electrogilding layer on the substrate of handling through second step 3 makes the height of first～the 4th bridge pier (20～23) increase to 2 μ m;
The 4th step deposition silicon nitride film
Deposition silicon nitride film on the surface of first, second bias pad (30,31), thickness are 300nm, as first, second silicon nitride film (70,71), form insulating barrier on the surface of first, second bias pad (30,31) respectively;
The 5th step coating sacrifice layer
Go up the coating sacrifice layer at the substrate of handling through the 4th step (3), thickness is 2 μ m, carry out photoetching in the mode that keeps the sacrifice layer on first, second silicon nitride film (70,71) on first, second bias pad (30,31), remove the sacrifice layer on the substrate (3);
The 6th step evaporation alusil alloy film
To place 5 * 10 through the substrate (3) that the 5th step handled
-5Under the vacuum degree of Torr, deposit alusil alloy film, the thickness of alusil alloy film are 0.7 μ m～0.9 μ m, and the silicon content of alusil alloy film is 4%;
The 7th step corrosion alusil alloy film
To the processing of corroding the alusil alloy film through the 6th substrate (3) that goes on foot processing, erode alusil alloy film on the substrate (3) in the mode that keeps the alusil alloy film on first mems switch (1) and second mems switch (2), uncorroded alusil alloy film is exactly the first bridge film (10) and the second bridge film (11), the first bridge film (10) is connected across between first bridge pier (20) and second bridge pier (21), and the second bridge film (11) is connected across between the 3rd bridge pier (22) and the 4th bridge pier (23);
The 8th step was removed sacrifice layer
With the sacrifice layer of plasma etching removal on first, second silicon nitride film (70,71) on first, second bias pad (30,31) on the substrate (3) of the 7th step processing, make the first bridge film (10) and the second bridge film (11) be suspended from the top of first bias pad (30) and second bias pad (31) respectively;
The 9th step welding gasket
First ground mat (90), signal and bias voltage input pad (80) and second ground mat (91) are welded on the bottom of the 3rd gold medal film (62), the first gold medal film (60) and the second gold medal film (61) respectively, and the making of described antenna is so far all finished.
4, the preparation method who contains the reconfigurable antenna of resonance frequency of mems switch according to claim 3 is characterized in that, the size of described high resistant silicon chip, thickness and resistivity are respectively 10mm * 10mm, 525 μ m and 3000 Ω cm.
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