CN1845441A - Novel power supply rectification circuit - Google Patents
Novel power supply rectification circuit Download PDFInfo
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- CN1845441A CN1845441A CN 200610019006 CN200610019006A CN1845441A CN 1845441 A CN1845441 A CN 1845441A CN 200610019006 CN200610019006 CN 200610019006 CN 200610019006 A CN200610019006 A CN 200610019006A CN 1845441 A CN1845441 A CN 1845441A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 181
- 239000003990 capacitor Substances 0.000 claims description 118
- 239000003381 stabilizer Substances 0.000 claims description 94
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 2
- 241000272470 Circus Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
Instead of common silicon rectifier diode, the related new power rectification circuit applies MOS tube with grid connected to control circuit and has following benefits: 1. improving rectifying efficiency; 2. about 0.1V voltage drop; 3. reducing size, cost, and 80-90% power consumption.
Description
Technical field
The utility model belongs to a kind of circuit, is a kind of novel power supply rectification circuit specifically.
Background technology
Power rectifier circuit commonly used at present is to adopt silicon rectifier diode as rectifier cell, its circuit commonly used is the half-wave finishing circuit, all-wave finishing circuit and bridge-type finishing circuit, its effect is that the alternating current rectification is become direct current, and the pressure drop of silicon rectifier diode is generally 0.7V～1V, in this pressure drop of some conventional occasions is negligible, but when electric current is excessive, the power that this pressure drop consumed is bigger, particularly utilize solar energy at some, in the utilization of eco-friendly power sources such as wind energy, it is to waste energy that this pressure drop can be called.
Summary of the invention
The purpose of this invention is to provide a kind of novel power supply rectification circuit that reduces rectifier cell power consumption in the power rectifier circuit as far as possible, to overcome above-mentioned deficiency.
To achieve these goals, characteristics of the present invention are: adopt field effect transistor (metal-oxide-semiconductor) as rectifier cell in power rectifier circuit.
Because the present invention adopts metal-oxide-semiconductor as rectifier cell in power rectifier circuit, makes the present invention have following beneficial effect: 1. rectification efficiency improves, and 2. caloric value reduces, and 3. the prime transformer reduces.Can make that machine volume dwindles, cost reduces, efficient improves.
Description of drawings
Fig. 1 is the embodiment of the invention 1 circuit theory diagrams.
Fig. 2 is the embodiment of the invention 2 circuit theory diagrams.
Fig. 3 is the embodiment of the invention 3 circuit theory diagrams.
Fig. 4 is the embodiment of the invention 4 circuit theory diagrams.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Whole power circuit of the present invention is made of attaching plug XP, insurance F, K switch, transformer T and rectification circuit.The present invention adopts the source-drain electrode of field effect transistor (metal-oxide-semiconductor) to replace existing ordinary silicon rectifier diode the two poles of the earth as rectifier cell in power rectifier circuit, and the grid of metal-oxide-semiconductor is connected with control circuit.
Embodiment 1:
Single-phase half-wave rectifier circuit (Fig. 1):
Circuit is made of metal-oxide-semiconductor Q, comparator U1, resistor R 1～R4, diode D1, D4, voltage-stabiliser tube D2, D3 and capacitor C1～C3, wherein the source-drain electrode of metal-oxide-semiconductor Q links to each other (replacing existing ordinary silicon rectifier diode as rectifier cell) with input one end of AC power and the output one end OUT-of DC power supply respectively, the output of the grid of metal-oxide-semiconductor Q and comparator U1 joins, and the input other end of AC power directly is connected with the output other end OUT+ of DC power supply;
The positive input of comparator U1 links to each other with the output of DC power supply one end OUT-, its negative-phase input joins by resistor R 3 and the drain D of metal-oxide-semiconductor Q, comparator U1 the working power anode by the series connection resistor R 1 link to each other with the output other end OUT+ of DC power supply with diode D1, and the voltage-stabiliser tube D2 that passes through parallel connection links to each other with the output one end OUT-of DC power supply with capacitor C1, the working power negative terminal of comparator U1 is by the resistor R 4 of series connection, the drain D of diode D4 and capacitor C3 and metal-oxide-semiconductor Q is joined, and is connected with the output one end OUT-of DC power supply with capacitor C2 by the voltage-stabiliser tube D3 of parallel connection;
Resistor R 4 is connected in parallel between the grid and source electrode of metal-oxide-semiconductor Q.
The operation principle of present embodiment 1 is: diode D1, resistor R 1, voltage-stabiliser tube D2, capacitor C1 provide comparator U1 positive supply, and diode D4, capacitor C3, resistor R 4, capacitor C2, voltage-stabiliser tube D3 provide comparator U1 negative supply."+" of comparator U1, "-" input are received source electrode and the drain D of metal-oxide-semiconductor Q respectively.When AC power upper end be "+" lower end during for "-", the source potential of metal-oxide-semiconductor Q is higher than drain D, and comparator U1 input positively biased is exported positive potential, and metal-oxide-semiconductor Q is because of the conducting of grid positive potential; Otherwise comparator U1 exports negative potential, and metal-oxide-semiconductor Q reliably ends because of the grid negative potential.
Embodiment 2:
Single-phase full-wave rectifer circuit (Fig. 2):
Substantially the same manner as Example 1, be secondary the first half that increased of transformer T, a corresponding metal-oxide-semiconductor Q2 and one group of comparator U1-2 of having increased.The shared same group of positive-negative power of U1-1 and U1-2.Every controlled situation of metal-oxide-semiconductor is identical with single-phase half-wave circuit.Be specially:
Present embodiment 2 circuit are by metal-oxide-semiconductor Q1, Q2, comparator U1-1, U1-2, resistor R 1～R6, diode D1～D3, voltage-stabiliser tube D4, D5 and capacitor C1～C3 constitutes, metal-oxide-semiconductor Q1 wherein, the source-drain electrode of Q2 links to each other (replacing existing ordinary silicon rectifier diode as rectifier cell) with the input two ends (the output two ends of transformer T) of AC power and the output one end OUT-of DC power supply respectively, the grid of metal-oxide-semiconductor Q respectively with comparator U1-1, the output of U1-2 joins, and the input middle-end of AC power (the centre tap output of transformer T) directly is connected with the output other end OUT+ of DC power supply;
The positive input of comparator U1-1, U1-2 links to each other with the output one end OUT-of DC power supply respectively, its negative-phase input joins with the drain D of metal-oxide-semiconductor Q1, Q2 by resistor R 3 and resistor R 4 respectively, the working power anode of comparator U1-1, U1-2 links to each other with the output one end OUT-of DC power supply with capacitor C2 by voltage-stabiliser tube D4 in parallel respectively, and the working power negative terminal of comparator U1-1, U1-2 is connected with the output one end OUT-of DC power supply with capacitor C3 by the voltage-stabiliser tube D5 of parallel connection respectively;
Voltage-stabiliser tube D4 in parallel and the forward end of capacitor C2 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D2 by the resistor R 1 of series connection, voltage-stabiliser tube D5 in parallel and capacitor C3 join by the resistor R 2 of series connection and the end of diode D3 and capacitor C1, the end of capacitor C1 also is connected with the input middle-end (the centre tap output of transformer T) of AC power by diode D1, and the other end of capacitor C1 is connected with the drain D of metal-oxide-semiconductor Q1;
Resistor R 5 and resistor R 6 are connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1, Q2.
The operation principle of present embodiment 2 is: diode D2, resistor R 1, voltage-stabiliser tube D4, capacitor C2 provide comparator U1-1, U1-2 positive supply; Diode D1, capacitor C1, diode D3, resistor R 2, capacitor C3, voltage-stabiliser tube D5 provide comparator U1-1, U1-2 negative supply."+" of comparator U1-1, "-" input are received source electrode and the drain D of metal-oxide-semiconductor Q1 respectively; "+" of comparator U1-2, "-" input are received source electrode and the drain D of metal-oxide-semiconductor Q2 respectively.When the AC power upper end was "-" for "+" lower end: the source potential of metal-oxide-semiconductor Q1 was higher than drain D, comparator U1-1 input positively biased, and the output positive potential, metal-oxide-semiconductor Q1 is because of the conducting of grid positive potential; The S electrode potential of metal-oxide-semiconductor Q2 is lower than the D utmost point simultaneously, and the U1-2 input is anti-inclined to one side, the output negative potential, and metal-oxide-semiconductor Q2 reliably ends because of the grid G negative potential.When the AC power upper end was "+" for "-" lower end: the source potential of metal-oxide-semiconductor Q1 was lower than drain D, and comparator U1-1 input is anti-inclined to one side, the output negative potential, and metal-oxide-semiconductor Q1 reliably ends because of the grid negative potential; The source potential of metal-oxide-semiconductor Q2 is higher than drain D simultaneously, comparator U1-2 input positively biased, and the output positive potential, metal-oxide-semiconductor Q2 is because of the conducting of grid positive potential.Metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 lead to and end at positive-negative half-cycle hour wheel conductance, finish single-phase full wave rectification work.
Embodiment 3:
Single phase bridge type rectifier circu (Fig. 3):
Circuit is made up of four metal-oxide-semiconductor Q1～Q4 and four comparator U1-1 and U1-2, U2 and U3, the shared same group of positive-negative power of comparator U1-1 and U1-2, and comparator U2 and U3 use independently positive-negative power separately.Every controlled situation of metal-oxide-semiconductor is identical with single-phase half-wave circuit.Be specially:
Present embodiment 3 circuit are by metal-oxide-semiconductor Q1～Q4, comparator U1-1, U1-2, U2, U3, resistor R 1～R14, diode D2, D4～D6, D8, D11, D13, voltage-stabiliser tube D1, D3, D7, D9～D10, D12 and capacitor C1～C7 constitutes, wherein the source electrode of the drain electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 interconnects, and link to each other with an end of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 interconnects, and join with the other end of AC power, the drain electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 respectively with the output two ends OUT-of DC power supply, OUT+ links to each other, the drain electrode of the source electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 respectively with the output two ends OUT-of DC power supply, OUT+ is connected (replacing existing ordinary silicon rectifier diode as rectifier cell), the grid of metal-oxide-semiconductor Q1～Q4 respectively with comparator U1-1, U1-2, U2, the output of U3 joins;
The positive input of comparator U1-1, U1-2 links to each other with the output one end OUT-of DC power supply respectively, its negative-phase input joins with the drain D of metal-oxide-semiconductor Q1, Q2 by resistor R 4 and resistor R 3 respectively, the negative input of comparator U2, U3 links to each other with the output other end OUT+ of DC power supply respectively, and its normal phase input end is connected with the drain D of resistor R 10 with metal-oxide-semiconductor Q2, Q1 by resistor R 9 respectively;
The working power anode of comparator U1-1, U1-2 links to each other with the output one end OUT-of DC power supply with capacitor C1 by voltage-stabiliser tube D1 in parallel respectively, and the working power negative terminal of comparator U1-1, U1-2 is connected with the output one end OUT-of DC power supply with capacitor C2 by the voltage-stabiliser tube D3 of parallel connection respectively;
Voltage-stabiliser tube D1 in parallel and the forward end of capacitor C1 link to each other with the output other end OUT+ of DC power supply with diode D2 by the resistor R 1 of series connection, voltage-stabiliser tube D3 in parallel and capacitor C2 negative end are joined by the resistor R 2 of series connection and the end of diode D4 and capacitor C3, the end of capacitor C1 also is connected with the drain D of metal-oxide-semiconductor Q2 by diode D5, and the other end of capacitor C3 is connected with the drain D of metal-oxide-semiconductor Q1;
The working power anode of comparator U2 links to each other with the drain D of metal-oxide-semiconductor Q2 with capacitor C6 by voltage-stabiliser tube D10 in parallel, and comparator U2 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q2 with capacitor C7 by the voltage-stabiliser tube D12 of parallel connection;
Voltage-stabiliser tube D10 in parallel and the forward end of capacitor C6 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D1 by the resistor R 13 of series connection, and voltage-stabiliser tube D12 in parallel is connected with the drain D of metal-oxide-semiconductor Q1 with diode D13 with the resistor R 14 of capacitor C7 negative end by series connection;
The working power anode of comparator U3 links to each other with the drain D of metal-oxide-semiconductor Q1 with capacitor C4 by voltage-stabiliser tube D7 in parallel, and comparator U3 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q1 with capacitor C5 by the voltage-stabiliser tube D9 of parallel connection;
Voltage-stabiliser tube D7 in parallel and the forward end of capacitor C4 link to each other with the drain D of metal-oxide-semiconductor Q2 with diode D6 by the resistor R 11 of series connection, and voltage-stabiliser tube D19 in parallel is connected with the drain D of metal-oxide-semiconductor Q2 with diode D8 with the resistor R 12 of capacitor C5 negative end by series connection;
Resistor R 5～R8 is connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1～Q4.
The operation principle of present embodiment 3 is: diode D2, resistor R 1, voltage-stabiliser tube D1, capacitor C1 provide comparator U1-1, U1-2 positive supply, and diode D5, capacitor C3, diode D4, resistor R 2, capacitor C2, voltage-stabiliser tube D3 provide comparator U1-1, U1-2 negative supply; Diode D11, resistor R 13, voltage-stabiliser tube D10, capacitor C6 provide comparator U2 positive supply, and diode D13, resistor R 14, voltage-stabiliser tube D12, capacitor C7 provide comparator U2 negative supply; Diode D6, resistor R 11, voltage-stabiliser tube D7, capacitor C4 provide comparator U3 positive supply, and diode D8, resistor R 12, capacitor C5, voltage-stabiliser tube D9 provide comparator U3 negative supply.
When the AC power upper end was "-" for "+" lower end: the source potential of metal-oxide-semiconductor Q1, Q3 was higher than drain D, comparator U1-1, U2 input positively biased, the output positive potential, metal-oxide-semiconductor Q1, Q3 are because of the conducting of grid positive potential, the source potential of metal-oxide-semiconductor Q2, Q4 is lower than drain D simultaneously, comparator U1-2, U3 input are anti-inclined to one side, the output negative potential, and metal-oxide-semiconductor Q2, Q4 reliably end because of the grid negative potential; When the power supply upper end was "+" for "-" lower end: the source potential of metal-oxide-semiconductor Q2, Q4 was higher than drain D, comparator U1-2, U3 input positively biased, the output positive potential, metal-oxide-semiconductor Q2, Q4 are because of the conducting of grid positive potential, the source potential of metal-oxide-semiconductor Q1, Q3 is lower than drain D simultaneously, comparator U1-1, U2 input are anti-inclined to one side, the output negative potential, and metal-oxide-semiconductor Q2, Q4 reliably end because of the grid negative potential.
Metal-oxide-semiconductor Q1, Q2 and metal-oxide-semiconductor Q3, Q4 lead to and end at positive-negative half-cycle hour wheel conductance, finish single-phase bridge rectification work.
Embodiment 4:
Three-phase bridge rectifier circuit (Fig. 4):
Form by six metal-oxide-semiconductor Q1～Q6 and six comparators, comparator U1-1, U1-2, the shared same group of positive-negative power of U1-3, comparator U2, U3, U4 use independently positive-negative power separately.Every controlled situation of metal-oxide-semiconductor is identical with single-phase half-wave circuit.Be specially:
Present embodiment 4 circuit are by metal-oxide-semiconductor Q1～Q6, comparator U1-1, U1-2, U1-3, U2, U3, U4, resistor R 1～R20, diode D1, D3, D6, D8, D10, D12, D13, D15, D17, voltage-stabiliser tube D2, D4, D5, D7, D9, D11, D14, D16 and capacitor C1～C9 constitutes, wherein the source electrode of the drain electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 interconnects, and it is continuous with the A of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 interconnects, and join with the B of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 interconnects, and be connected mutually with the C of AC power, the drain electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 respectively with the output two ends OUT-of DC power supply, OUT+ links to each other, the drain electrode of the source electrode of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 respectively with the output two ends OUT-of DC power supply, OUT+ is connected, the drain electrode of the source electrode of metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 respectively with the output two ends OUT-of DC power supply, OUT+ is connected (replacing existing ordinary silicon rectifier diode as rectifier cell), the grid of metal-oxide-semiconductor Q1～Q6 respectively with comparator U1-3, U2, U1-2, U3, U1-1, the output of U4 joins;
The positive input of comparator U1-1, U1-2, U1-3 links to each other with the output one end OUT-of DC power supply respectively, its negative-phase input joins by the drain D of resistor R 11, R7, R3 and metal-oxide-semiconductor Q5, Q3, Q1 respectively, the negative input of comparator U2, U3, U4 links to each other with the output other end OUT+ of DC power supply respectively, and its normal phase input end is connected with the drain D of metal-oxide-semiconductor Q1, Q3, Q5 by resistor R 6, R10, R14 respectively;
The working power anode of comparator U1-1, U1-2, U1-3 links to each other with the output one end OUT-of DC power supply with capacitor C1 by voltage-stabiliser tube D2 in parallel respectively, and the working power negative terminal of comparator U1-1, U1-2, U1-3 is connected with the output one end OUT-of DC power supply with capacitor C2 by the voltage-stabiliser tube D4 of parallel connection respectively;
Voltage-stabiliser tube D2 in parallel and the forward end of capacitor C1 link to each other with the output other end OUT+ of DC power supply with diode D1 by the resistor R 1 of series connection, voltage-stabiliser tube D4 in parallel and capacitor C2 negative end are joined by the resistor R 2 of series connection and the end of diode D3 and capacitor C3, the end of capacitor C1 also is connected with the drain D of metal-oxide-semiconductor Q1 by diode D17, and the other end of capacitor C3 is connected with the drain D of metal-oxide-semiconductor Q5;
The working power anode of comparator U2 links to each other with the drain D of metal-oxide-semiconductor Q1 with capacitor C4 by voltage-stabiliser tube D5 in parallel, comparator U2 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q1 with capacitor C5 by the voltage-stabiliser tube D7 of parallel connection, voltage-stabiliser tube D5 in parallel and the forward end of capacitor C4 link to each other with the drain D of metal-oxide-semiconductor Q3 with diode D6 by the resistor R 15 of series connection, and voltage-stabiliser tube D7 in parallel is connected with the drain D of metal-oxide-semiconductor Q3 with diode D8 with the resistor R 16 of capacitor C5 negative end by series connection;
The working power anode of comparator U3 links to each other with the drain D of metal-oxide-semiconductor Q3 with capacitor C6 by voltage-stabiliser tube D9 in parallel, comparator U3 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q3 with capacitor C7 by the voltage-stabiliser tube D11 of parallel connection, voltage-stabiliser tube D9 in parallel and the forward end of capacitor C6 link to each other with the drain D of metal-oxide-semiconductor Q5 with diode D10 by the resistor R 17 of series connection, and voltage-stabiliser tube D11 in parallel is connected with the drain D of metal-oxide-semiconductor Q5 with diode D12 with the resistor R 18 of capacitor C7 negative end by series connection;
The working power anode of comparator U4 links to each other with the drain D of metal-oxide-semiconductor Q5 with capacitor C9 by voltage-stabiliser tube D16 in parallel, comparator U4 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q5 with capacitor C8 by the voltage-stabiliser tube D14 of parallel connection, voltage-stabiliser tube D16 in parallel and the forward end of capacitor C9 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D15 by the resistor R 20 of series connection, and voltage-stabiliser tube D14 in parallel is connected with the drain D of metal-oxide-semiconductor Q1 with diode D13 with the resistor R 19 of capacitor C8 negative end by series connection;
Resistor R 4, R5, R8, R9, R12, R13 are connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1～Q6.
The operation principle of present embodiment 4 is: diode D1, resistor R 1, voltage-stabiliser tube D2, capacitor C1 provide comparator U1-1, U1-2, U1-3 positive supply; Diode D17, capacitor C3, diode D3, resistor R 2, capacitor C2, voltage-stabiliser tube D4 provide comparator U1-1, U1-2, U1-3 negative supply.Diode D6, resistor R 15, voltage-stabiliser tube D5, capacitor C4 provide comparator U2 positive supply; Diode D8, R resistor 16, voltage-stabiliser tube D7, capacitor C5 provide comparator U2 negative supply.Diode D10, resistor R 17, voltage-stabiliser tube D9, capacitor C6 provide comparator U3 positive supply; Diode D12, resistor R 18, voltage-stabiliser tube D11, capacitor C7 provide comparator U3 negative supply.Diode D15, resistor R 20, voltage-stabiliser tube D16, capacitor C9 provide comparator U4 positive supply; Diode D13, resistor R 19, voltage-stabiliser tube D14, capacitor C8 provide U3 negative supply.Comparator U1-3, U1-2, U1-1, U2, U3, U4 control metal-oxide-semiconductor Q1, Q2, Q3, Q4, Q5, Q6 respectively.
When the source potential of arbitrary metal-oxide-semiconductor is higher than drain D, its corresponding comparator input terminal positively biased, the output positive potential is controlled this metal-oxide-semiconductor conducting; On the contrary, when the source potential of metal-oxide-semiconductor is lower than drain D, its corresponding comparator input terminal negative bias, the output negative potential is controlled this metal-oxide-semiconductor and is ended.Along with the variation of three phase mains, metal-oxide-semiconductor Q1, Q2, Q3, Q4, Q5, Q6 take turns conducting or end according to described principle, finish three-phase bridge rectification work.
Rectification circuit of the present invention can be applied to other power rectifier circuits such as six phase bridge rectification circuits, six phase double reverse-stars type rectified currents equally.
After the metal-oxide-semiconductor conducting of the present invention, droop loss is very little, and about about 0.1V, and the ordinary silicon rectifier diode reaches rated current one half when electric current, about the about 1V of droop loss.As seen substitute the ordinary silicon rectifies with metal-oxide-semiconductor, the pipe power consumption can reduce 80-90%.
The content that is not described in detail in this specification belongs to this area professional and technical personnel's known prior art.
Claims (6)
1, a kind of novel power supply rectification circuit is characterized in that: adopt metal-oxide-semiconductor as rectifier cell in power rectifier circuit.
2, power rectifier circuit as claimed in claim 1 is characterized in that: adopt the source-drain electrode of metal-oxide-semiconductor to replace existing ordinary silicon rectifier diode the two poles of the earth as rectifier cell in power rectifier circuit, the grid of metal-oxide-semiconductor is connected with control circuit.
3, power rectifier circuit as claimed in claim 1, it is characterized in that: power rectifier circuit is made of metal-oxide-semiconductor Q, comparator U1, resistor R 1～R4, diode D1, D4, voltage-stabiliser tube D2, D3 and capacitor C1～C3, wherein the source-drain electrode of metal-oxide-semiconductor Q respectively with input one end of AC power and the output one end OUT of DC power supply
-Link to each other (replacing existing ordinary silicon rectifier diode as rectifier cell), the output of the grid of metal-oxide-semiconductor Q and comparator U1 joins, the output other end OUT of the direct and DC power supply of the input other end of AC power
+Be connected;
The positive input of comparator U1 and the output of DC power supply one end OUT
-Link to each other, its negative-phase input joins by resistor R 3 and the drain D of metal-oxide-semiconductor Q, comparator U1 the working power anode by the resistor R 1 of series connection and the output other end OUT of diode D1 and DC power supply
+Link to each other, and by the voltage-stabiliser tube D2 in parallel and the output one end OUT of capacitor C1 and DC power supply
-Link to each other, the working power negative terminal of comparator U1 joins by resistor R 4, diode D4 and the capacitor C3 of series connection and the drain D of metal-oxide-semiconductor Q, and by the voltage-stabiliser tube D3 in parallel and the output one end OUT of capacitor C2 and DC power supply
-Be connected;
Resistor R 4 is connected in parallel between the grid and source electrode of metal-oxide-semiconductor Q.
4, power rectifier circuit as claimed in claim 1, it is characterized in that: power rectifier circuit is made of metal-oxide-semiconductor Q1, Q2, comparator U1-1, U1-2, resistor R 1～R6, diode D1～D3, voltage-stabiliser tube D4, D5 and capacitor C1～C3, wherein the source-drain electrode of metal-oxide-semiconductor Q1, Q2 respectively with the input two ends (the output two ends of transformer T) of AC power and the output one end OUT of DC power supply
-Link to each other (replacing existing ordinary silicon rectifier diode) as rectifier cell, the grid of metal-oxide-semiconductor Q joins with the output of comparator U1-1, U1-2 respectively, and the input middle-end of AC power (the centre tap output of transformer T) directly and the output other end OUT of DC power supply
+Be connected;
The positive input of comparator U1-1, U1-2 respectively with the output one end OUT of DC power supply
-Link to each other, its negative-phase input joins with the drain D of metal-oxide-semiconductor Q1, Q2 by resistor R 3 and resistor R 4 respectively, and the working power anode of comparator U1-1, U1-2 is respectively by the voltage-stabiliser tube D4 in parallel and the output one end OUT of capacitor C2 and DC power supply
-Link to each other, the working power negative terminal of comparator U1-1, U1-2 is respectively by the voltage-stabiliser tube D5 in parallel and the output one end OUT of capacitor C3 and DC power supply
-Be connected;
Voltage-stabiliser tube D4 in parallel and the forward end of capacitor C2 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D2 by the resistor R 1 of series connection, voltage-stabiliser tube D5 in parallel and capacitor C3 join by the resistor R 2 of series connection and the end of diode D3 and capacitor C1, the end of capacitor C1 also is connected with the input middle-end (the centre tap output of transformer T) of AC power by diode D1, and the other end of capacitor C1 is connected with the drain D of metal-oxide-semiconductor Q1;
Resistor R 5 and resistor R 6 are connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1, Q2.
5, power rectifier circuit as claimed in claim 1, it is characterized in that: power rectifier circuit is by metal-oxide-semiconductor Q1～Q4, comparator U1-1, U1-2, U2, U3, resistor R 1～R14, diode D2, D4～D6, D8, D11, D13, voltage-stabiliser tube D1, D3, D7, D9～D10, D12 and capacitor C1～C7 constitutes, wherein the source electrode of the drain electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 interconnects, and link to each other with an end of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 interconnects, and join with the other end of AC power, the drain electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 respectively with the output two ends OUT of DC power supply
-, OUT
+Link to each other, the drain electrode of the source electrode of metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 respectively with the output two ends OUT of DC power supply
-, OUT
+Be connected (replacing existing ordinary silicon rectifier diode as rectifier cell), the grid of metal-oxide-semiconductor Q1～Q4 joins with the output of comparator U1-1, U1-2, U2, U3 respectively;
The positive input of comparator U1-1, U1-2 respectively with the output one end OUT of DC power supply
-Link to each other, its negative-phase input joins with the drain D of metal-oxide-semiconductor Q1, Q2 by resistor R 4 and resistor R 3 respectively, the negative input of comparator U2, U3 respectively with the output other end OUT of DC power supply
+Link to each other, its normal phase input end is connected with the drain D of resistor R 10 with metal-oxide-semiconductor Q2, Q1 by resistor R 9 respectively;
The working power anode of comparator U1-1, U1-2 is respectively by the voltage-stabiliser tube D1 in parallel and the output one end OUT of capacitor C1 and DC power supply
-Link to each other, the working power negative terminal of comparator U1-1, U1-2 is respectively by the voltage-stabiliser tube D3 in parallel and the output one end OUT of capacitor C2 and DC power supply
-Be connected;
Voltage-stabiliser tube D1 in parallel and the forward end of capacitor C1 are by the resistor R 1 of series connection and the output other end OUT of diode D2 and DC power supply
+Link to each other, voltage-stabiliser tube D3 in parallel and capacitor C2 negative end are joined by the resistor R 2 of series connection and the end of diode D4 and capacitor C3, the end of capacitor C1 also is connected with the drain D of metal-oxide-semiconductor Q2 by diode D5, and the other end of capacitor C3 is connected with the drain D of metal-oxide-semiconductor Q1;
The working power anode of comparator U2 links to each other with the drain D of metal-oxide-semiconductor Q2 with capacitor C6 by voltage-stabiliser tube D10 in parallel, and comparator U2 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q2 with capacitor C7 by the voltage-stabiliser tube D12 of parallel connection;
Voltage-stabiliser tube D10 in parallel and the forward end of capacitor C6 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D1 by the resistor R 13 of series connection, and voltage-stabiliser tube D12 in parallel is connected with the drain D of metal-oxide-semiconductor Q1 with diode D13 with the resistor R 14 of capacitor C7 negative end by series connection;
The working power anode of comparator U3 links to each other with the drain D of metal-oxide-semiconductor Q1 with capacitor C4 by voltage-stabiliser tube D7 in parallel, and comparator U3 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q1 with capacitor C5 by the voltage-stabiliser tube D9 of parallel connection;
Voltage-stabiliser tube D7 in parallel and the forward end of capacitor C4 link to each other with the drain D of metal-oxide-semiconductor Q2 with diode D6 by the resistor R 11 of series connection, and voltage-stabiliser tube D19 in parallel is connected with the drain D of metal-oxide-semiconductor Q2 with diode D8 with the resistor R 12 of capacitor C5 negative end by series connection;
Resistor R 5～R8 is connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1～Q4.
6, power rectifier circuit as claimed in claim 1, it is characterized in that: power rectifier circuit is by metal-oxide-semiconductor Q1～Q6, comparator U1-1, U1-2, U1-3, U2, U3, U4, resistor R 1～R20, diode D1, D3, D6, D8, D10, D12, D13, D15, D17, voltage-stabiliser tube D2, D4, D5, D7, D9, D11, D14, D16 and capacitor C1～C9 constitutes, wherein the source electrode of the drain electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 interconnects, and it is continuous with the A of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 interconnects, and join with the B of AC power, the source electrode of the drain electrode of metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 interconnects, and be connected mutually with the C of AC power, the drain electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 respectively with the output two ends OUT of DC power supply
-, OUT
+Link to each other, the drain electrode of the source electrode of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 respectively with the output two ends OUT of DC power supply
-, OUT
+Be connected, the drain electrode of the source electrode of metal-oxide-semiconductor Q5 and metal-oxide-semiconductor Q6 respectively with the output two ends OUT of DC power supply
-, OUT
+Be connected (replacing existing ordinary silicon rectifier diode as rectifier cell), the grid of metal-oxide-semiconductor Q1～Q6 joins with the output of comparator U1-3, U2, U1-2, U3, U1-1, U4 respectively;
The positive input of comparator U1-1, U1-2, U1-3 respectively with the output one end OUT of DC power supply
-Link to each other, its negative-phase input joins by the drain D of resistor R 11, R7, R3 and metal-oxide-semiconductor Q5, Q3, Q1 respectively, the negative input of comparator U2, U3, U4 respectively with the output other end OUT of DC power supply
+Link to each other, its normal phase input end is connected with the drain D of metal-oxide-semiconductor Q1, Q3, Q5 by resistor R 6, R10, R14 respectively;
The working power anode of comparator U1-1, U1-2, U1-3 is respectively by the voltage-stabiliser tube D2 in parallel and the output one end OUT of capacitor C1 and DC power supply
-Link to each other, the working power negative terminal of comparator U1-1, U1-2, U1-3 is respectively by the voltage-stabiliser tube D4 in parallel and the output one end OUT of capacitor C2 and DC power supply
-Be connected;
Voltage-stabiliser tube D2 in parallel and the forward end of capacitor C1 are by the resistor R 1 of series connection and the output other end OUT of diode D1 and DC power supply
+Link to each other, voltage-stabiliser tube D4 in parallel and capacitor C2 negative end are joined by the resistor R 2 of series connection and the end of diode D3 and capacitor C3, the end of capacitor C1 also is connected with the drain D of metal-oxide-semiconductor Q1 by diode D17, and the other end of capacitor C3 is connected with the drain D of metal-oxide-semiconductor Q5;
The working power anode of comparator U2 links to each other with the drain D of metal-oxide-semiconductor Q1 with capacitor C4 by voltage-stabiliser tube D5 in parallel, comparator U2 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q1 with capacitor C5 by the voltage-stabiliser tube D7 of parallel connection, voltage-stabiliser tube D5 in parallel and the forward end of capacitor C4 link to each other with the drain D of metal-oxide-semiconductor Q3 with diode D6 by the resistor R 15 of series connection, and voltage-stabiliser tube D7 in parallel is connected with the drain D of metal-oxide-semiconductor Q3 with diode D8 with the resistor R 16 of capacitor C5 negative end by series connection;
The working power anode of comparator U3 links to each other with the drain D of metal-oxide-semiconductor Q3 with capacitor C6 by voltage-stabiliser tube D9 in parallel, comparator U3 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q3 with capacitor C7 by the voltage-stabiliser tube D11 of parallel connection, voltage-stabiliser tube D9 in parallel and the forward end of capacitor C6 link to each other with the drain D of metal-oxide-semiconductor Q5 with diode D10 by the resistor R 17 of series connection, and voltage-stabiliser tube D11 in parallel is connected with the drain D of metal-oxide-semiconductor Q5 with diode D12 with the resistor R 18 of capacitor C7 negative end by series connection;
The working power anode of comparator U4 links to each other with the drain D of metal-oxide-semiconductor Q5 with capacitor C9 by voltage-stabiliser tube D16 in parallel, comparator U4 working power negative terminal is connected with the drain D of metal-oxide-semiconductor Q5 with capacitor C8 by the voltage-stabiliser tube D14 of parallel connection, voltage-stabiliser tube D16 in parallel and the forward end of capacitor C9 link to each other with the drain D of metal-oxide-semiconductor Q1 with diode D15 by the resistor R 20 of series connection, and voltage-stabiliser tube D14 in parallel is connected with the drain D of metal-oxide-semiconductor Q1 with diode D13 with the resistor R 19 of capacitor C8 negative end by series connection;
Resistor R 4, R5, R8, R9, R12, R13 are connected in parallel on respectively between the grid and source electrode of metal-oxide-semiconductor Q1～Q6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100190069A CN100464486C (en) | 2006-04-30 | 2006-04-30 | Novel power supply rectification circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100190069A CN100464486C (en) | 2006-04-30 | 2006-04-30 | Novel power supply rectification circuit |
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| CN100464486C CN100464486C (en) | 2009-02-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707945A (en) * | 2018-07-10 | 2020-01-17 | Oppo广东移动通信有限公司 | Rectifier circuit, wireless charging device, power supply equipment and wireless charging system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR0173949B1 (en) * | 1995-10-16 | 1999-05-01 | 김광호 | A full-wave bridge rectifier circuit |
| US6060943A (en) * | 1998-04-14 | 2000-05-09 | Nmb (Usa) Inc. | Circuit simulating a diode |
| CN1130002C (en) * | 2000-10-23 | 2003-12-03 | 凌阳科技股份有限公司 | Circuit simulating zero cut-in voltage diode and rectifier circuit with said characteristics |
| CN1155151C (en) * | 2000-12-01 | 2004-06-23 | 台达电子工业股份有限公司 | Synchronous rectifier |
| FR2861916A1 (en) * | 2003-10-31 | 2005-05-06 | St Microelectronics Sa | CONTROLLING A MOS TRANSISTOR AS A RECOVERY ELEMENT |
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2006
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| CN110707945A (en) * | 2018-07-10 | 2020-01-17 | Oppo广东移动通信有限公司 | Rectifier circuit, wireless charging device, power supply equipment and wireless charging system |
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| CN100464486C (en) | 2009-02-25 |
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