CN1845306A - Transmission platform for semiconductor wafer processing - Google Patents
Transmission platform for semiconductor wafer processing Download PDFInfo
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- CN1845306A CN1845306A CN 200510130649 CN200510130649A CN1845306A CN 1845306 A CN1845306 A CN 1845306A CN 200510130649 CN200510130649 CN 200510130649 CN 200510130649 A CN200510130649 A CN 200510130649A CN 1845306 A CN1845306 A CN 1845306A
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Abstract
The related transmission platform for a semiconductor wafer processing comprises: a port for wafer-cabin opening and loading, some reaction chambers, and a vacuum axisymmetrical polygonal transmission cavity. Wherein, arranging some vacuum manipulators, some wafer temporary areas, two vacuum locks on nearby polygonal edges, and the reaction chambers on other edges; applying the manipulators near the lock for transmission among the lock, nearest chamber and the temporary area, and other manipulators for transmission among the near areas and chambers. This invention has more wide application area and well compatibility.
Description
Technical field
The present invention relates to the semiconductor wafer process equipment, particularly the transmission platform of semiconductor wafer processing.
Background technology
Semiconductor wafer add man-hour, do the technology reaction from the sheet cabin to reaction chamber, finish technical process after, again wafer is gone back to the sheet cabin from the reaction chamber transmission, the vacuum transmission chamber is the important ring in the wafer transmission process, is the nervous centralis of wafer transmission system, plays the effect of transport hub.Concrete transfer process as shown in Figure 1.
Semiconductor 300mm great majority adopt the structure as Fig. 2, Fig. 3 at present.
As shown in Figure 2, the vacuum transmission chamber is the regular polygon structure.Vacuum mechanical-arm is positioned at the vacuum chamber middle.Two vacuum lock chambers and a plurality of process reaction chamber respectively occupy a limit of polygon transmission chamber, become radial distribution.Wafer exchange between propagation in atmosphere part, vacuum lock and each reative cell is finished by vacuum mechanical-arm fully.
As shown in Figure 3, in this transmission system, do not have vacuum transmission chamber truly, but wafer directly is delivered in the reative cell by manipulator by the vacuum lock chamber.Like this, vacuum lock chamber, vacuum mechanical-arm, reative cell are arranged side by side, and be corresponding one by one.
In above transmission structure, a manipulator will be responsible for the transmission of whole wafers, in the vacuum lock chamber exchange of wafer frequent, the number of wafers of carrying out PROCESS FOR TREATMENT simultaneously is restricted, thus production efficiency be difficult to improve.
Summary of the invention
The technical problem that solves
The purpose of this invention is to provide a kind of semiconductor machining that can handle more wafer simultaneously and transfer platform.
Technical scheme
A kind of transmission platform of semiconductor wafer processing, comprise the unlatching of sheet cabin load port, some reative cells and vacuum transmission chamber, the vacuum transmission chamber is the axial symmetry polygonized structure, axial arranged some vacuum mechanical-arms in the vacuum transmission chamber, axial symmetry is arranged some wafers working area, and some reative cells (1～6) and two vacuum locks are put (7,8) and are distributed in polygonal periphery, wherein two vacuum locks place polygonal two adjacent limits, and reative cell places polygonal other limits.
Be responsible for wafer at vacuum lock, from own nearest reative cell and from own nearest wafer working area transmission each other from the near manipulator of vacuum lock, from vacuum lock manipulator far away be responsible for wafer from own near wafer working area with from own near some reative cells transmission each other.
Wherein, described axial symmetry polygon is non-regular polygon.
Wherein, described axial symmetry polygon is non-regular hexagon, and described manipulator is two, and described wafer working area is two.
Wherein, the adjacent limit at described vacuum lock place is axisymmetric adjacent edge.
Wherein, from the near manipulator of vacuum lock be responsible for undressed wafer from go into the sheet vacuum lock be sent to first reative cell or the first wafer working area, with wafer from first reative cell be sent to the first wafer working area, with wafer be sent to from the final wafer working area final reaction chamber, with the wafer of completion of processing from the final reaction chamber or the final wafer working area be sent to the slice vacuum lock.
Consider to take up an area of the output capacity problem of space and front end transmission unit, the vacuum transmission chamber also can adopt rectangle, non-positive 5～8 limit shape structures of axial symmetry.
Beneficial effect
The present invention compares with transmission system structure in the past, has increased the quantity of portability reative cell.Simultaneously, a plurality of vacuum mechanical-arms are worked simultaneously, and place a plurality of wafers staging area in vacuum chamber, have increased the number of wafers of carrying out technological operation simultaneously, have reduced the exchange frequency of vacuum lock chamber for wafer, improve the output capacity of whole system greatly.And for the rapid semiconductor die machining process of multistep, also finish multistep technology and solution is provided more widely and has implemented the space for being implemented in same board.Compare with traditional transmission system, have more process application scope and favorable compatibility widely.
Description of drawings
Fig. 1 is existing semiconductor machining transmission general flow figure;
Fig. 2 is a kind of existing semiconductor machining transmission platform;
Fig. 3 plants existing semiconductor machining transmission platform in addition;
Fig. 4 is the transfer process figure of the embodiment of the invention;
Fig. 5 is the transmission platform floor plan of the embodiment of the invention.
Among the figure: 1, first reative cell; 2, second reative cell; 3, the 3rd reative cell; 4, the 4th reaction is fixed; 5, the 5th reative cell; 6, the 6th reative cell, the final reaction chamber; 7, go into the sheet vacuum lock; 8, slice vacuum lock; 9, propagation in atmosphere unit; 10, go into sheet sheet cabin and open load port; 11, load port is opened in slice sheet cabin; R1, from the near manipulator of vacuum lock; R2, from vacuum lock manipulator far away; , P1, the first wafer working area; P2, the second wafer working area, the final wafer working area.
Embodiment
Following examples are used to illustrate the present invention; but be not used for limiting the scope of the invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be limited by every claim.
As shown in Figure 5, a kind of transmission platform of semiconductor wafer processing comprises two sheet cabins unlatching load ports, first to the 6th reative cell, and an axial symmetry hexagonal structure vacuum transmission chamber adopts the non-regular hexagon structure of axial symmetry.On vacuum transmission chamber inner polygon axial line, arrange two vacuum mechanical-arm R1, R2, perpendicular to two wafer working areas of symmetric arrangement P1, P2 on the center line of axle, promptly two vacuum mechanical-arms and two wafer working areas lay respectively at the polygon cavity two center lines upwards.Two vacuum locks place hexagonal axisymmetric two adjacent edges, and six reative cells place hexagonal all the other four limits.
Be responsible for two vacuum locks 10,11 and first reative cell 1, the 6th reative cell 6, two wafer working area 7,8 wafer transferring each other from the near manipulator R1 of vacuum lock 10,11.The manipulator R2 far away from vacuum lock is responsible for second reative cell 2, the 3rd reative cell 3, the 4th reative cell 4, the 5th reative cell 5 or two wafer working area wafer transferring each other.
When getting into wafer from vacuum lock and need be delivered to first reative cell 1, the 6th reative cell 6, directly by aimed wafer being transmitted from the near manipulator R1 of vacuum lock.
When wafer need be delivered to second reative cell 2, the 3rd reative cell 3, the 4th reative cell 4 or the 5th reative cell 5, the manipulator R1 near from vacuum lock need get sheet from the first wafer working area P1 from vacuum lock manipulator R2 far away and be delivered to the goal response chamber with aimed wafer by being delivered to P1 from the near manipulator R1 of vacuum lock again.
When wafer is finished technology and returned, realize of the switching of two vacuum mechanical-arms by final wafer working area P2 again for wafer.
The idiographic flow of wafer transmission such as Fig. 4.
Consider to take up an area of the output capacity problem of space and front end transmission unit, the vacuum transmission chamber also can adopt rectangle, non-positive 5～8 limit shape structures of axial symmetry, can play same effect.
The present invention compares with transmission system structure in the past, has increased the quantity of portability reative cell.Simultaneously, two vacuum mechanical-arms are worked simultaneously, and place two wafer staging areas in vacuum chamber, have increased the number of wafers of carrying out technological operation simultaneously, have reduced the exchange frequency of vacuum lock chamber for wafer, improve the output capacity of whole system greatly.And for the rapid semiconductor die machining process of multistep, also finish multistep technology and solution is provided more widely and has implemented the space for being implemented in same board, have more process application scope and favorable compatibility widely.
Claims (6)
1, a kind of transmission platform of semiconductor wafer processing, comprise sheet cabin unlatching load port (10,11), some reative cells (1～6) and vacuum transmission chamber (12), it is characterized in that, described vacuum transmission chamber (12) is the axial symmetry polygonized structure, axial arranged some vacuum mechanical-arm (R1 in vacuum transmission chamber (12), R2), axial symmetry is arranged some wafers working area (P1, P2), some reative cells (1～6) and two vacuum locks are put (7,8) and are distributed in polygonal periphery, it is adjacent that two vacuum locks are put polygonal two limits, (7,8) place.
2, the transmission platform of semiconductor wafer processing as claimed in claim 1 is characterized in that described polygon is non-regular polygon.
3, the transmission platform of semiconductor wafer processing as claimed in claim 1 is characterized in that described axial symmetry polygon is a hexagon, and described manipulator is two, and described wafer working area is two.
4, the transmission platform of semiconductor wafer processing as claimed in claim 1 is characterized in that the adjacent limit at described vacuum lock place is axisymmetric adjacent edge.
5, the transmission platform of processing as the described semiconductor wafer of claim 1 to 4, it is characterized in that, be responsible for undressed wafer is passed (7) and delivers to first reative cell (1) or the first wafer working area (P1), wafer is sent to the first wafer working area (P1), wafer is sent to final reaction chamber (6), the wafer of completion of processing is sent to slice vacuum lock (8) from final reaction chamber (6) or final wafer working area (P2) from final wafer working area (P2) from first reative cell (1) from going into the sheet vacuum lock from the near manipulator of vacuum lock (R1).
6, the transmission platform of semiconductor wafer processing as claimed in claim 1 is characterized in that, described vacuum transmission chamber (12) adopts rectangle or non-positive 5～8 limit shape structures of axial symmetry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101306496A CN100383949C (en) | 2005-12-16 | 2005-12-16 | Transmission platform for semiconductor wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101306496A CN100383949C (en) | 2005-12-16 | 2005-12-16 | Transmission platform for semiconductor wafer processing |
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| Publication Number | Publication Date |
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| CN1845306A true CN1845306A (en) | 2006-10-11 |
| CN100383949C CN100383949C (en) | 2008-04-23 |
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| CNB2005101306496A Active CN100383949C (en) | 2005-12-16 | 2005-12-16 | Transmission platform for semiconductor wafer processing |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101195220B (en) * | 2006-11-15 | 2010-06-09 | 罗普伺达机器人有限公司 | Double arm type robot |
| CN101702404B (en) * | 2009-11-05 | 2011-05-11 | 上海微电子装备有限公司 | Silicon wafer cross-connecting device and silicon wafer cross-connecting method thereof |
| CN101802997B (en) * | 2007-09-14 | 2011-12-07 | 韩美半导体株式会社 | Apparatus for cutting processing memory card |
| CN102560406A (en) * | 2010-12-24 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition (PVD) device and method for processing wafers by adopting same |
| CN102897522A (en) * | 2012-10-22 | 2013-01-30 | 大同齿轮(昆山)有限公司 | Processing unit with high-efficient coordination of conveying and processing |
| WO2015014012A1 (en) * | 2013-08-01 | 2015-02-05 | 上海集成电路研发中心有限公司 | Device platform system and wafer transmission method thereof |
| US8992153B2 (en) | 2008-06-30 | 2015-03-31 | Intevac, Inc. | System and method for substrate transport |
| US9157145B2 (en) | 2008-07-29 | 2015-10-13 | Intevac, Inc. | Processing tool with combined sputter and evaporation deposition sources |
| CN105388866A (en) * | 2015-11-17 | 2016-03-09 | 合肥芯福传感器技术有限公司 | Whole-process production workstation for IC chips or MEMS devices |
| CN105529293A (en) * | 2014-10-17 | 2016-04-27 | 朗姆研究公司 | Equipment front end module for transferring wafers and method of transferring wafers |
| CN105977123A (en) * | 2016-06-29 | 2016-09-28 | 中国电子科技集团公司第四十八研究所 | SiC injection machine chip-conveying system and method |
| CN109742041A (en) * | 2019-01-07 | 2019-05-10 | 成都中电熊猫显示科技有限公司 | The control method and equipment of substrate transmission |
| CN110391152A (en) * | 2018-04-16 | 2019-10-29 | 汉民科技股份有限公司 | Epitaxial growth process system and its automatic transmitting method |
| CN111952139A (en) * | 2019-05-16 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| CN113745131A (en) * | 2021-08-31 | 2021-12-03 | 顾赢速科技(合肥)有限公司 | Multilayer epitaxy process and linear platform equipment thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0267462A3 (en) * | 1986-11-12 | 1990-01-31 | Heraeus Amersil, Inc. | Mass transferable semiconductor substrate processing and handling full shell carrier (boat) |
| JP2001338954A (en) * | 2000-05-30 | 2001-12-07 | Mitsumi Electric Co Ltd | Semiconductor wafer processing system and semiconductor wafer processing method |
| JP2005303954A (en) * | 2004-04-16 | 2005-10-27 | Matsushita Electric Ind Co Ltd | Transmission system semiconductor integrated circuit device |
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2005
- 2005-12-16 CN CNB2005101306496A patent/CN100383949C/en active Active
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101195220B (en) * | 2006-11-15 | 2010-06-09 | 罗普伺达机器人有限公司 | Double arm type robot |
| CN101802997B (en) * | 2007-09-14 | 2011-12-07 | 韩美半导体株式会社 | Apparatus for cutting processing memory card |
| US8992153B2 (en) | 2008-06-30 | 2015-03-31 | Intevac, Inc. | System and method for substrate transport |
| US9157145B2 (en) | 2008-07-29 | 2015-10-13 | Intevac, Inc. | Processing tool with combined sputter and evaporation deposition sources |
| CN101702404B (en) * | 2009-11-05 | 2011-05-11 | 上海微电子装备有限公司 | Silicon wafer cross-connecting device and silicon wafer cross-connecting method thereof |
| CN102560406A (en) * | 2010-12-24 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition (PVD) device and method for processing wafers by adopting same |
| CN102560406B (en) * | 2010-12-24 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition (PVD) device and method for processing wafers by adopting same |
| CN102897522A (en) * | 2012-10-22 | 2013-01-30 | 大同齿轮(昆山)有限公司 | Processing unit with high-efficient coordination of conveying and processing |
| CN102897522B (en) * | 2012-10-22 | 2015-12-09 | 大同齿轮(昆山)有限公司 | Conveying and the efficient processing unit (plant) coordinated of processing |
| WO2015014012A1 (en) * | 2013-08-01 | 2015-02-05 | 上海集成电路研发中心有限公司 | Device platform system and wafer transmission method thereof |
| CN105529293B (en) * | 2014-10-17 | 2020-10-02 | 朗姆研究公司 | Front end module of equipment for transferring wafer and method for transferring wafer |
| CN105529293A (en) * | 2014-10-17 | 2016-04-27 | 朗姆研究公司 | Equipment front end module for transferring wafers and method of transferring wafers |
| CN105388866A (en) * | 2015-11-17 | 2016-03-09 | 合肥芯福传感器技术有限公司 | Whole-process production workstation for IC chips or MEMS devices |
| CN105977123B (en) * | 2016-06-29 | 2018-07-24 | 中国电子科技集团公司第四十八研究所 | A kind of SiC implanters pass piece system and its pass piece method |
| CN105977123A (en) * | 2016-06-29 | 2016-09-28 | 中国电子科技集团公司第四十八研究所 | SiC injection machine chip-conveying system and method |
| CN110391152A (en) * | 2018-04-16 | 2019-10-29 | 汉民科技股份有限公司 | Epitaxial growth process system and its automatic transmitting method |
| CN109742041A (en) * | 2019-01-07 | 2019-05-10 | 成都中电熊猫显示科技有限公司 | The control method and equipment of substrate transmission |
| CN111952139A (en) * | 2019-05-16 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| CN111952139B (en) * | 2019-05-16 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| CN113745131A (en) * | 2021-08-31 | 2021-12-03 | 顾赢速科技(合肥)有限公司 | Multilayer epitaxy process and linear platform equipment thereof |
| CN113745131B (en) * | 2021-08-31 | 2024-01-16 | 顾赢速科技(合肥)有限公司 | Multilayer epitaxy process and linear platform equipment thereof |
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| Publication number | Publication date |
|---|---|
| CN100383949C (en) | 2008-04-23 |
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Owner name: BEIFANG MICROELECTRONIC BASE EQUIPMENT PROCES RESE Free format text: FORMER OWNER: BEIJING YUANHE ELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20110311 |
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Free format text: CORRECT: ADDRESS; FROM: 100016 NO. 1, JIUXIANQIAO EAST ROAD, CHAOYANG DISTRICT, BEIJING TO: 100015 NO. 1, JIUXIANQIAO EAST ROAD, CHAOYANG DISTRICT, BEIJING |
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Effective date of registration: 20110311 Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing Address before: 100016 Jiuxianqiao East Road, Beijing, No. 1, No. Patentee before: Beijing Yuanhe Electronic Technology Co., Ltd. |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |