CN1835199A - Etch monitor and method thereof - Google Patents
Etch monitor and method thereof Download PDFInfo
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- CN1835199A CN1835199A CN 200510033736 CN200510033736A CN1835199A CN 1835199 A CN1835199 A CN 1835199A CN 200510033736 CN200510033736 CN 200510033736 CN 200510033736 A CN200510033736 A CN 200510033736A CN 1835199 A CN1835199 A CN 1835199A
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- monitoring
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- monochromator
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Abstract
The monitoring unit includes a light source, a test-monitoring piece, a monochromator, a photodetector, and multiple light-guiding components. The light source supplies a signal of reference light, and signal of monitoring light. The reference light is transferred to the monochromator, which selects a monochromatic light as reference and contrast signal sent to the photodetector. Signal of monitoring light is transferred to the test-monitoring piece, which reflects signal of monitoring light transferred to the monochromator. The monochromator selects monochromatic light in same wavelength as monitored contrast signal, which sends to the photodetector. Using filtering and light guiding components, which are connected to each part, in monochromator eliminates influence on monitored result caused by stray light and vibration so as to raise monitoring precision and stability. Use of test-monitoring piece raises response speed. The invention also discloses related monitoring method.
Description
[technical field]
The present invention relates to etching process monitoring device and monitoring method, especially an etching process real-time monitoring device and a monitoring method of semiconductor in a kind of semiconductor technology or other wafer.
[background technology]
The manufacturing process of semiconductor integrated circuit mainly comprises four basic operations: mask manufacture, etching, by deposition or growth cambium layer structure, and mix.Wherein, etching is an important ring of semiconductor integrated circuit manufacturing process.The engraving method of semiconductor integrated circuit comprises wet etching (Wet Etching) and dry etching (Dry Etching) two classes.Normally a kind of plasma etching of dry etching (PlasmaEtching), because the difference of etching action can be divided into three major types with it: the physical property etching, as sputter etching (Sputter Etching), ion beam milling (Ion Beam Etching); The chemical etching is as plasma chemistry etches (Plasma Chemical Etching); Reach physics, chemically composited etching, as reactive ion etching (Reactive Ion Etching).Because plasma etching has advantages such as anisotropy, high surface ratio, etching outline be preferable, can satisfy the high-precision demand of present very lagre scale integrated circuit (VLSIC) figure transfer.
Along with integrated circuit processing technique to micron, even inferior micrometer depth direction develops, large-scale architectural feature is very responsive for slight over etching as gate oxide level.Therefore, in the etching process of production of integrated circuits, very important to the control of etch-rate and terminal point.
A kind of way of the prior art is in semiconductor technology, at first to Silicon Wafer or the pre-etching of glass wafer once, calculates etch-rate again and finishes the required time of whole etching process according to etch depth in etching process and etching period; Then, do further etching, to finish whole etching process according to the subsequent etch required time.But in the conductor etching process, the variation owing to pressure, gas flow, electromagnetic field or the like factor can cause the variation at once of etch-rate in the etching process.Therefore, above-mentioned etching end point control method is difficult to reach high-precision requirement owing to can't monitor whole etching process in real time.
Referring to Fig. 1, it is a United States Patent (USP) the 4th, 618, a kind of etching real-time monitoring device 30 that is disclosed for No. 262, it is made up of lasing light emitter 33, optical splitter 34, stationary mirror 36, scanning reflection mirror 38, condenser lens 27, wafer 15, etching machine 48, detector 42, signal amplifier 45, computer control system 50, linear step motor 40.In etching process, produce beam of laser 18 by lasing light emitter 33, through optical splitter 34, stationary mirror 36, scanning reflection mirror 38, and condenser lens 27 is projected to wafer 15, reflection by wafer 15 produces a detecting light beam 41 again, line focus lens 27, scanning reflection mirror 38, stationary mirror 36, optical splitter 34, receive and produce analog electrical signal by detector 42, deliver to computer control system 50 through signal amplifier 45, calculate etch-rate according to analog electrical signal by computer control system 50, current etch depth waits the etch-rate of controlling etching machine 48 and/or stops etching.Linear step motor 40 is then surveyed Cutting Road (Scribe Line) position of wafer 15 by the deflection angle of computer control system 50 control break scanning reflection mirrors 38, and laser 18 is pinned in the Cutting Road position to realize the etching process monitoring to wafer 15.All strict light modulation contrapositions such as the installation site of each parts of this etching process real-time monitoring device 30 and angle, thus the aligning of light path in use very easily influenced because of reasons such as vibrations, thus influence monitoring precision and stability.And it needs the position of first line scanning Cutting Road in the etching observation process, and laser beam is positioned at after this Cutting Road position, can carry out the etching process monitoring, has reduced its response speed.
In view of this, be necessary to provide a monitoring accuracy and stability high, fast etching real-time monitoring device and the etching monitoring method of response speed.
[summary of the invention]
To a kind of etch monitor and monitoring method be described with some embodiment below, it has monitoring accuracy and stability is high, the fast characteristics of response speed.
For realizing foregoing, a kind of etch monitor is provided, be used to monitor the etched thickness for the treatment of etchant, it comprises: a light source; One test monitoring sheet; One monochromator; An and photo-detector; This light source provide a reference optical signal and one the monitoring light signal, this reference optical signal is passed to monochromator, monochromator converts thereof into monochromatic light, and select one first monochromatic light outgoing to this photo-detector with as one with reference to contrast signal; This monitoring light signal is passed to this test monitoring sheet, this test monitoring sheet reflects above-mentioned monitoring light signal, and it is passed to monochromator, monochromator converts thereof into monochromatic light, and select a monochromatic light outgoing that has an identical wavelength with this first monochromatic light to this photo-detector with as a monitoring contrast signal.
Described reference optical signal and monitoring light signal are by a plurality of light-guide device transmission.
Described a plurality of light-guide device comprises optical fiber and is arranged on the beam condensing unit at optical fiber two ends.
Preferably, described beam condensing unit comprises condenser and two fiber optic collimator device.
Described test monitoring sheet and this treat that etchant is arranged in the same etching chamber.
Described test monitoring sheet is a predetermined value with this etch-rate ratio for the treatment of etchant.
And, a kind of etching monitoring method is provided, it may further comprise the steps:
One light source is provided, produces a reference optical signal and a monitoring light signal by this light source;
This reference optical signal is passed to a monochromator, and this monochromator converts thereof into monochromatic light, and selects one first wavelength monochromatic light outgoing to a photo-detector with as with reference to contrast signal;
Should monitor light signal is passed on the test monitoring sheet and by this test monitoring sheet and reflects, this monitoring light signal that is reflected is passed to above-mentioned monochromator, this monochromator converts thereof into monochromatic light, and the monochromatic light outgoing with identical wavelength of selection and the above-mentioned first wavelength monochromatic light to above-mentioned photo-detector with as monitoring contrast signal;
Relatively monitor contrast signal and calculate the etched thickness of this test monitoring sheet with respect to the strength difference of reference contrast signal;
Treat that by this test monitoring sheet and an etch-rate of etchant is than calculating the etched thickness that this treats etchant.
With respect to prior art, the etch monitor that the technical program provided, it adopts monochromator to suppress the interference of other stray light, improves the monitoring accuracy of etching process monitoring device greatly; And connect each parts by light-guide device, do not need the installation site between each parts and the accurate aligning adjustment of angle, only need light-guide device and each component alignment are got final product, can increase its shock resistance, the stability of raising etching process monitoring device.In addition, it will test the monitoring sheet and etched thing places in the same etching chamber, it has identical etching atmosphere, treat the varied in thickness of etchant by the varied in thickness monitoring of test monitoring sheet, it only needs in the etching observation process, and to monitor sheet 72 adjustment good with test with condenser 7122 and 7131, need not position the monitoring light signal, help improving the response speed of this etch monitor.
[description of drawings]
Fig. 1 is a kind of etch monitor schematic diagram that prior art discloses.
Fig. 2 is the etch monitor schematic diagram of first embodiment of the invention.
Fig. 3 is the etch monitor schematic diagram of second embodiment of the invention.
Fig. 4 is the structural representation of two fiber optic collimator devices in the second embodiment of the invention etch monitor.
[embodiment]
To be described in further detail the embodiment of the invention below in conjunction with accompanying drawing.
Referring to Fig. 2, the etch monitor that first embodiment of the invention provided is treated the real-time etched thickness of etchant (present embodiment adopts wafer 631) in order to monitoring.This etching process monitoring device comprises a light source 70, one monochromators 73, one photo-detectors 74, one test monitoring sheets 72, and a plurality of light-guide devices.
Light source 70 is generally Halogen lamp LED, in order to light signal to be provided; The light signal that light source 70 sends produces two bundle light of light intensity identical (or becoming fixed proportion) after optical modulator (Chopper) 701 modulation, wherein a branch of light is as the reference light signal, and another Shu Guang is as the monitoring light signal.
Light source 70 sends and passes through condenser 7111 successively through the reference optical signal that optical modulator 701 is modulated, optical fiber 711 and condenser 7112 conduct to monochromator 73, convert thereof into monochromatic light by monochromator 73, and select one first monochromatic light via exit slit 731 outgoing of monochromator 73 to photo-detector 74 with as one with reference to contrast signal.Wherein, condenser 7111 and condenser 7112 converge usefulness as light beam.
Light source 70 sends and passes through condenser 7121 successively through the monitoring light signal that optical modulator 701 is modulated, and optical fiber 712, condenser 7122 are passed to etching chamber 60 and incide the test monitoring sheet 72 that is positioned at etching chamber 60; The above-mentioned monitoring light signal that is incident on it of test monitoring sheet 72 reflections.Should pass through condenser 7131 successively by the monitoring light signal of test monitoring sheet 72 reflections, optical fiber 713, condenser 7132 conducts to monochromator 73, convert thereof into monochromatic light by monochromator 73, and monochromatic light with identical wavelength (promptly monitoring wavelength) of selection and above-mentioned first monochromatic light via exit slit 731 outgoing of monochromator 73 to photo-detector 74 with as a monitoring contrast signal.Wherein, condenser 7121,7122,7131 and 7132 converge usefulness as light beam, and condenser 7122 and 7131 one-tenth one small angles of condenser, to receive by condenser 7122 incidents and to monitor the monitoring light signal of sheet 72 reflections after tested.
In etching chamber 60, test monitoring sheet 72 is positioned on the same transparency carrier 630 with wafer 631, and its relative position is fixed, and etching atmosphere is identical.The reflectivity of 630 pairs of light of this transparency carrier is very little, is approximately zero.This wafer 631 can be Silicon Wafer or glass wafer.The etch-rate relation of wafer 631 and test monitoring sheet 72 is relevant with both materials; When the material of wafer 631 and test monitoring sheet 72 was selected, it can be determined with the etch-rate of test monitoring sheet 72 by measure wafer 631 before etching; So this test monitoring sheet 72 has the etch-rate ratio that can be scheduled to wafer 631.This etch-rate is than after determined, and it will be because of test monitoring sheet 72 and wafer 631 be in the same etching atmosphere not with the change of (as, the gas concentration in the etching chamber 60) of etching environments in the etching chamber 60, and promptly etch-rate is than fixing.In etching process, in etching chamber 60, charge into a certain amount of gas by air inlet 610, by the ion of plasma generator 620 certain initial velocity of generation and concentration, then the gas ionizations in the etching chamber 60 are monitored the etching of sheet 72 to wafer 631 and test with realization.
Photo-detector 74 survey by the reference optical signal of monochromator 73 inputs with by the monitoring light signal of test monitoring sheet 72 reflections respectively as with reference to contrast signal and monitoring contrast signal, to compare with reference to contrast signal and monitoring contrast signal, test the real-time etched thickness of monitoring sheet 72 with respect to the light-intensity difference of reference contrast signal to obtain by the monitoring contrast signal; Then, monitor the etch-rate of sheet 72 than the real-time etched thickness that calculates wafer 631 by wafer 631 and test.Wherein, photo-detector 74 mostly is that wide wave zone is (as 400nm～1100nm), so that the different demands that detect wavelength on the technology to be provided.
In addition, for increasing the life cycle of test monitoring sheet 72, can place one to have on the rotation carrier of a plurality of perforates test monitoring sheet 72, as circular carrier, it has six perforates or more; This rotation carrier is positioned at the etched side of test monitoring sheet 72.Whenever carry out an etching, drive the gear structure rotation of circular carrier outer ring by a motor, with not etched part of obtaining test monitoring sheet to be used for etching next time.
The explanation of the observation process of above-mentioned etch monitor: the light that light source 70 sends is derived two bundle light respectively after optical modulator 701 modulation, and the light intensity of this two-beam is identical or become a fixed ratio.Wherein a branch of light is focused on by condenser 7111 and as importing monochromators 73 with reference to light signal by optical fiber 711, constitutes reference path; This reference optical signal is filtered the monochromatizing light through monochromator 73, and inputs to photo-detector 74 conducts with reference to contrast signal.
After another Shu Guang focuses on via condenser 7121, by optical fiber 712 input etching chambers 60; In etching chamber 60, the thickness of test monitoring sheet 72 is because of etched attenuation, and it increases the transmitance by the light beam of optical fiber 712 inputs, and then makes its reflectivity diminish; So monitoring the intensity by the light beam of optical fiber 712 inputs of sheet 72 reflection after tested diminishes; This is monitored after tested, and sheet 72 beam reflected focus on by condenser 7131 and conduct monitoring optical signals optical fiber 713 input monochromators 73, constitute the monitoring light path; This monitoring light signal is filtered the monochromatizing light through monochromator 73, and inputs to photo-detector 74 as the monitoring contrast signals.
The reference optical signal of input monochromator 73 and monitoring light signal convert monochromatic light respectively to via monochromator 73, and select the monochromatic light corresponding with monitoring wavelength by exit slit 731 outgoing of monochromator 73 to photo-detector; By reference contrast signal and the monitoring contrast signal of photo-detector 74 monitorings, directly obtain the real-time etching state of test monitoring sheet 72 with respect to the luminous intensity difference of reference contrast signal according to the monitoring contrast signal again by monochromator 73 inputs.Because wafer 631 is etched in same atmosphere with test monitoring sheet 72, and relative position fixes, and it has fixing etching ratio; Therefore can obtain the real-time etching state of wafer 631 by the real-time etching state of test monitoring sheet 72, and then reach the purpose that the real-time etching state of wafer 631 is monitored.
Referring to Fig. 3, the etching process monitoring device that second embodiment of the invention provided is similar substantially to first embodiment, and it comprises a light source 70, a plurality of light-guide devices, a monochromator 73, one photo-detectors 74, and a test monitoring sheet 72.Its difference is to adopt a pair of fiber optic collimator device 81 to replace condenser 7122 and the condenser 7131 that separates among first embodiment; Adopt a pair of fiber optic collimator device 82 to replace condenser 7112 and the condenser 7132 that separates among first embodiment.
Referring to Fig. 4, be that example explains with two fiber optic collimator devices 81, this pair fiber optic collimator device 81 comprises an optical fiber contact pins 811, one collimation lens 812 and sleeves 813.This optical fiber contact pins 811 has a through hole 8111; Optical fiber 712 and optical fiber 713 intert at above-mentioned through hole 8111 and fixing within it by viscose; Collimating lens 812 also is projected on the test monitoring sheet 72 at a certain angle in order to the beam collimation with optical fiber 712 inputs, monitor sheet 72 reflection backs after tested and be projected to collimating lens end face 8121 in opposite direction with equal angular, by collimating lens 812 light beam is converged to optical fiber 713, import monochromator 73 then.Sleeve 813 is in order to fixed fiber contact pin 811 and collimating lens 812.
Etch monitor in the foregoing description and method use monochromator 73 can reduce the influence of stray light to monitor signal, improve the monitoring accuracy of etching process monitoring device.And the employing of optical fiber can be avoided the interference of external ambient light to whole optical system for testing, improves the monitoring stability of this etching process monitoring device.In addition, the employing of test monitoring sheet 72 only needs condenser 7122 and 7131 good with 72 adjustment of test monitoring sheet need not be positioned monitoring light signal in the etching observation process, helps improving the response speed of this etch monitor.
In addition, those skilled in the art also can do other variation in spirit of the present invention, as adopt other light source to be used for designs such as the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (12)
1. an etch monitor is used to monitor the etched thickness for the treatment of etchant, and it comprises: a light source; One test monitoring sheet; One monochromator; An and photo-detector; This light source provide a reference optical signal and one the monitoring light signal, this reference optical signal is passed to monochromator, monochromator converts thereof into monochromatic light, and select one first monochromatic light outgoing to this photo-detector with as one with reference to contrast signal; This monitoring light signal is passed to this test monitoring sheet, this test monitoring sheet reflects above-mentioned monitoring light signal, and it is passed to monochromator, monochromator converts thereof into monochromatic light, and select a monochromatic light outgoing that has an identical wavelength with this first monochromatic light to this photo-detector with as a monitoring contrast signal.
2. etch monitor as claimed in claim 1 is characterized in that described etch monitor also comprises a plurality of light-guide devices, and it is used to transmit above-mentioned reference optical signal and above-mentioned monitoring light signal.
3. etch monitor as claimed in claim 2 is characterized in that described a plurality of light-guide device comprises optical fiber and is arranged on the beam condensing unit at optical fiber two ends.
4. etch monitor as claimed in claim 3 is characterized in that described beam condensing unit comprises condenser and two fiber optic collimator device.
5. etch monitor as claimed in claim 1 is characterized in that described test monitoring sheet is a predetermined value with this etch-rate ratio for the treatment of etchant.
6. etch monitor as claimed in claim 1 is characterized in that sheet is monitored in described test and this treats that etchant is arranged in the same etching chamber.
7. etching monitoring method, it may further comprise the steps: a light source is provided, produces a reference optical signal and a monitoring light signal by this light source; This reference optical signal is passed to a monochromator, and this monochromator converts thereof into monochromatic light, and selects one first wavelength monochromatic light outgoing to a photo-detector with as with reference to contrast signal; Should monitor light signal is passed on the test monitoring sheet and by this test monitoring sheet and reflects, this monitoring light signal that is reflected is passed to above-mentioned monochromator, this monochromator converts thereof into monochromatic light, and the monochromatic light outgoing with identical wavelength of selection and the above-mentioned first wavelength monochromatic light to above-mentioned photo-detector with as monitoring contrast signal; Relatively monitor contrast signal and calculate the etched thickness of this test monitoring sheet with respect to the strength difference of reference contrast signal; Treat that by this test monitoring sheet and an etch-rate of etchant is than calculating the etched thickness that this treats etchant.
8. etching monitoring method as claimed in claim 7 is characterized in that described reference optical signal and monitoring light signal are by a plurality of light-guide device transmission.
9. etching monitoring method as claimed in claim 8 is characterized in that described a plurality of light-guide device comprises optical fiber and is arranged on the beam condensing unit at optical fiber two ends.
10. etching monitoring method as claimed in claim 9 is characterized in that described beam condensing unit comprises condenser and two fiber optic collimator device.
11. etching monitoring method as claimed in claim 7 is characterized in that described test monitoring sheet is a predetermined value with this etch-rate ratio for the treatment of etchant.
12. etching monitoring method as claimed in claim 7 is characterized in that sheet is monitored in described test and this treats that etchant is arranged in the same etching chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510033736XA CN100405567C (en) | 2005-03-18 | 2005-03-18 | Etch monitor and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510033736XA CN100405567C (en) | 2005-03-18 | 2005-03-18 | Etch monitor and method thereof |
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| Publication Number | Publication Date |
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| CN1835199A true CN1835199A (en) | 2006-09-20 |
| CN100405567C CN100405567C (en) | 2008-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200510033736XA Expired - Fee Related CN100405567C (en) | 2005-03-18 | 2005-03-18 | Etch monitor and method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078375A (en) * | 2013-03-29 | 2014-10-01 | 株式会社日立高新技术 | Plasma processing apparatus and plasma processing method |
| CN108465940A (en) * | 2018-03-26 | 2018-08-31 | 英特尔产品（成都）有限公司 | Laser labelling detecting system and its control method |
| CN113130280A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Light intensity monitoring and adjusting mechanism, light intensity monitoring and adjusting method and plasma processing device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0737958A (en) * | 1993-07-16 | 1995-02-07 | Nippon Telegr & Teleph Corp <Ntt> | Monitoring apparatus for semiconductor treatment process |
| US6849470B1 (en) * | 1996-11-08 | 2005-02-01 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device |
| US6488092B1 (en) * | 2001-10-09 | 2002-12-03 | William N. Schoeffler | By-pass valve |
| US20040018647A1 (en) * | 2002-07-02 | 2004-01-29 | Applied Materials, Inc. | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry |
-
2005
- 2005-03-18 CN CNB200510033736XA patent/CN100405567C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078375A (en) * | 2013-03-29 | 2014-10-01 | 株式会社日立高新技术 | Plasma processing apparatus and plasma processing method |
| CN104078375B (en) * | 2013-03-29 | 2016-12-28 | 株式会社日立高新技术 | Plasma treatment appts and plasma processing method |
| CN108465940A (en) * | 2018-03-26 | 2018-08-31 | 英特尔产品（成都）有限公司 | Laser labelling detecting system and its control method |
| CN108465940B (en) * | 2018-03-26 | 2019-08-20 | 英特尔产品（成都）有限公司 | Laser labelling detection system and its control method |
| CN113130280A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Light intensity monitoring and adjusting mechanism, light intensity monitoring and adjusting method and plasma processing device |
| CN113130280B (en) * | 2019-12-31 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Light intensity monitoring and adjusting mechanism, adjusting method and plasma processing device |
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| CN100405567C (en) | 2008-07-23 |
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