JPS62190728A - Method and apparatus for monitoring etching end point - Google Patents

Method and apparatus for monitoring etching end point

Info

Publication number
JPS62190728A
JPS62190728A JP3178386A JP3178386A JPS62190728A JP S62190728 A JPS62190728 A JP S62190728A JP 3178386 A JP3178386 A JP 3178386A JP 3178386 A JP3178386 A JP 3178386A JP S62190728 A JPS62190728 A JP S62190728A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
infrared light
reflected
metal film
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3178386A
Inventor
Ban Nakajima
Juichi Noda
Toshitaka Shibata
Shigeyuki Tsurumi
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To eliminate the influence of contamination of a substance to be etched by introducing an infrared light of a predetermined wavelength to the surface of a semiconductor substrate of the side not formed with a thin metal film of the surface of the substrate, measuring the intensity of the light reflected on the thin film through the substrate of the infrared light, and obtaining the etching end point by the intensity of the reflected light to readily position a detector, thereby improving S/N ratio.
CONSTITUTION: The infrared light of 1.3μm of wavelength modulated by a sinusoidal wave of 1kHz from an infrared light emitting unit 5 is passed through a half mirror 4 to an optical fiber 1, and emitted to a silicon substrate 10 formed with the thin metal film as parallel beam via a rod lens 3. Part of the infrared light of 1.3μm of wavelength is reflected on the back surface of the substrate 10, but is passed through the Si, reflected on the metal film surface, again through the lens 3, and returned to the optical fiber 1. The returned infrared light is reflected on the half mirror 4, and detected by an infrared light detector 6. When the metal film is etched and removed by the plasma, the reflected light is erased from the metal film, thereby notifying the etching end point.
COPYRIGHT: (C)1987,JPO&Japio
JP3178386A 1986-02-18 1986-02-18 Method and apparatus for monitoring etching end point Granted JPS62190728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3178386A JPS62190728A (en) 1986-02-18 1986-02-18 Method and apparatus for monitoring etching end point

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3178386A JPS62190728A (en) 1986-02-18 1986-02-18 Method and apparatus for monitoring etching end point

Publications (1)

Publication Number Publication Date
JPS62190728A true true JPS62190728A (en) 1987-08-20

Family

ID=12340652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3178386A Granted JPS62190728A (en) 1986-02-18 1986-02-18 Method and apparatus for monitoring etching end point

Country Status (1)

Country Link
JP (1) JPS62190728A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994007110A1 (en) * 1992-09-17 1994-03-31 Luxtron Corporation Optical endpoint determination during the processing of material layers
US5891352A (en) * 1993-09-16 1999-04-06 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6849152B2 (en) 1992-12-28 2005-02-01 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6910944B2 (en) 1995-03-28 2005-06-28 Applied Materials, Inc. Method of forming a transparent window in a polishing pad
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
US7677959B2 (en) 1999-09-14 2010-03-16 Applied Materials, Inc. Multilayer polishing pad and method of making
US7731566B2 (en) 1995-03-28 2010-06-08 Applied Materials, Inc. Substrate polishing metrology using interference signals

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110752A (en) * 1992-09-17 2000-08-29 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5695660A (en) * 1992-09-17 1997-12-09 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
WO1994007110A1 (en) * 1992-09-17 1994-03-31 Luxtron Corporation Optical endpoint determination during the processing of material layers
US6077452A (en) * 1992-09-17 2000-06-20 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US7024063B2 (en) 1992-12-28 2006-04-04 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US6849152B2 (en) 1992-12-28 2005-02-01 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5891352A (en) * 1993-09-16 1999-04-06 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US6426232B1 (en) 1993-09-16 2002-07-30 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US8092274B2 (en) 1995-03-28 2012-01-10 Applied Materials, Inc. Substrate polishing metrology using interference signals
US7841926B2 (en) 1995-03-28 2010-11-30 Applied Materials, Inc. Substrate polishing metrology using interference signals
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US8506356B2 (en) 1995-03-28 2013-08-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6860791B2 (en) 1995-03-28 2005-03-01 Applied Materials, Inc. Polishing pad for in-situ endpoint detection
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US6910944B2 (en) 1995-03-28 2005-06-28 Applied Materials, Inc. Method of forming a transparent window in a polishing pad
US7775852B2 (en) 1995-03-28 2010-08-17 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US7731566B2 (en) 1995-03-28 2010-06-08 Applied Materials, Inc. Substrate polishing metrology using interference signals
US7255629B2 (en) 1995-03-28 2007-08-14 Applied Materials, Inc. Polishing assembly with a window
US7011565B2 (en) 1995-03-28 2006-03-14 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US7118450B2 (en) 1995-03-28 2006-10-10 Applied Materials, Inc. Polishing pad with window and method of fabricating a window in a polishing pad
US6875078B2 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US8556679B2 (en) 1995-03-28 2013-10-15 Applied Materials, Inc. Substrate polishing metrology using interference signals
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US7042581B2 (en) 1999-05-24 2006-05-09 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6654132B1 (en) 1999-05-24 2003-11-25 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US7677959B2 (en) 1999-09-14 2010-03-16 Applied Materials, Inc. Multilayer polishing pad and method of making
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US7198544B2 (en) 2001-12-28 2007-04-03 Applied Materials, Inc. Polishing pad with window
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing

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