CN1830087A - Solid-state imaging device, production method for solid-state imaging device and camera using this - Google Patents
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Abstract
A solid-state imaging device comprising a plurality of light reception means arranged two-dimensionally in a semiconductor substrate, a filtering means that transmits only lights having wavelengths to be incident to the light reception means, and a light shielding means that shields an incident light and has openings at positions respectively facing the plurality of light reception means, wherein he filtering means is disposed between the plurality of light reception means and the light shielding means, whereby color mixing caused by an oblique light is prevented.
Description
Technical field
The camera that the present invention relates to a kind of solid imaging element and manufacture method thereof and use it relates in particular to a kind of more color solid-state image device of high-performance and smaller szie that is used to realize.
Background technology
In solid imaging element, be arranged with light receiving element corresponding to red (R), green (G), blue (B) in mode such as Bayer pattern.Figure 1 shows that the schematic sectional view of conventional solid-state image device structure.As shown in Figure 1, solid imaging element 1 comprises N-type semiconductor layer 101, P-type semiconductor layer 102, light receiving element 103R, 103G, 103B, insulating barrier 104, photomask 105, colour filter 106R, 106G and 106B and collector lens 107.
P type semiconductor layer 102 is formed on the N-type semiconductor layer 101. Light receiving element 103R, 103G and 103B are embedded in the P-type semiconductor layer 102, to contact with insulating barrier 104.Here, light receiving element 103R, 103G and 103B are separated from each other, and have the partitioned portion of P-type semiconductor layer 102 therebetween.Photomask 105 is embedded in the insulating barrier 104, to be arranged on the partitioned portion top of P-type semiconductor layer 102.
In seeing through the light of corresponding collector lens 107, colour filter 106G only sends green glow, and this green glow concentrates on the light receiving element 103G.Photomask 105 prevents that the green glow that sees through colour filter 106G from entering light receiving element 103R and 103B.Here, light receiving element 103R, 103G and 103B convert the brightness that receives to electric charge by opto-electronic conversion, and stored charge therein.
This solid imaging element has been published in " Kotaisatsuzousoshi no kiso " (basis of solid imaging element) of for example Japanese early stage publication application NO.H05-6986 and Andoh and Komobuchi, Nihon Rikou Shuppannkai (Japanese Science and Technology is open), The Institute of Image, Information and Television Engineers, in December, 1999, p.183-188 in.
Summary of the invention
When light when various directions enter solid imaging element, the risk that exists be oblique incidence light (below, be called skew ray) may be received by the light receiving unit except that the light receiving unit of expectation, thus make the color separation variation, reduce resolution and wavelength photosensitivity and increase noise.
And, in order to increase the resolution of solid imaging element, must reduce the size of its pixel.Yet, exist pigment particle size can be reduced to how little restriction, surpass this restriction and can produce photosensitivity decline and color homogeneity decline inevitably.
In order to address these problems, the invention provides a kind of solid imaging element, it comprises: be arranged in a plurality of light receiving units on the Semiconductor substrate two-dimensionally; Be used for color-filter unit to the incident light of the selected wavelength of described a plurality of light receiving unit transmissions; And the lightproof unit that is used to block incident light, described lightproof unit has a plurality of holes, described each hole is relative with corresponding light receiving unit, wherein on a travel path of incident light from described lightproof unit to described a plurality of lightproof unit, described color-filter unit equipment is between described lightproof unit and described a plurality of light receiving unit.
Have this structure, can block skew ray, thereby make it not enter color-filter unit, thereby reduce colour mixture.
Here, solid imaging element also comprises: be used for incident light is accumulated in the described a plurality of holes that are arranged on described lightproof unit light focusing unit on the corresponding light receiving element in each.
Have this structure, light focusing unit accumulates in light on the suitable light receiving unit, thereby can reduce colour mixture.
In addition, color-filter unit can be made up of inorganic material.According to this structure, can make color-filter unit by system's Semiconductor substrate manufacturing process, and therefore can improve the productive rate of solid imaging element and reduce manufacturing cost.
Color-filter unit can also have multi-layer film structure.Have this structure, can reduce the thickness of color-filter unit, help reducing of solid imaging element overall dimension.
Color-filter unit can be made up of photonic crystal.In addition, solid imaging element of the present invention comprises: be arranged in a plurality of light receiving units on the Semiconductor substrate two-dimensionally; And the color-filter unit that is used for selecting to described a plurality of light receiving unit transmissions the incident light of wavelength, wherein said color-filter unit is made up of photonic crystal.According to this structure, color-filter unit accumulates in skew ray on the suitable receiving element, and therefore can prevent colour mixture.
In addition, the present invention relates to a kind of camera that disposes solid imaging element, this solid imaging element has a plurality of light receiving units that are arranged in two-dimensionally on the Semiconductor substrate; Be used for color-filter unit to the incident light of the selected wavelength of described a plurality of light receiving unit transmissions; And the lightproof unit that is used to block incident light, described lightproof unit has a plurality of holes, described each hole is relative with corresponding light receiving unit, wherein, on a travel path of incident light from described lightproof unit to described a plurality of lightproof unit, described color-filter unit equipment is between described lightproof unit and described a plurality of light receiving unit.
In addition, the present invention relates to a kind of camera that disposes solid imaging element, this solid state image pickup device comprises: be arranged in a plurality of light receiving units on the Semiconductor substrate two-dimensionally; And the color-filter unit that is used for selecting the incident light of wavelength to described a plurality of light receiving unit transmissions; Wherein said color-filter unit is made up of photonic crystal.According to this structure, can provide the camera that prevents colour mixture and have high quality graphic.
In addition, the present invention relates to a kind of solid imaging element that comprises the color-filter unit of the incident light that is used for the selected wavelength X level of transmission, wherein said color-filter unit is a dielectric multilayer film, described film comprises the multilayer film of two λ/4 and is clipped in insulating barrier between described λ/4 multilayer films that described insulating barrier has the thickness except that λ/4.
Utilize the film formed color-filter unit of above-mentioned dielectric multilayer to have thinner thickness.This can prevent that skew ray from arriving the neighbor of expectation pixel, thereby improves color separation function.Notice that in this manual, λ/4 multilayer films are represented the film that is made of a plurality of layers, the thickness of its every tunic is approximately λ/4.
Here, described dielectric multilayer film comprises: optical thickness is insulating barrier except that λ/4, and this two λ/4 multilayer films comprise respectively: first dielectric layer, its optical thickness are λ/4 and are made by the refractive index material different with described insulating layer material; Second dielectric layer, its optical thickness are λ/4 and are made by the refractive index identical materials of refractive index and described insulating layer material; Described first dielectric layer is formed on the first type surface of described insulating barrier, and described second dielectric layer is formed on described first dielectric layer not on the first type surface of described insulating barrier.
Here, the optical thickness of insulating barrier can be set so that color-filter unit sees through the light of selected wavelength X level.
According to this structure, the color-filter unit that utilizes thickness to be substantially equal to lambda1-wavelength (approximately 500nm) can be realized color separation.Therefore, color-filter unit thickness is thinner, and this can reduce the color separation function variation that caused by skew ray effectively.
Here, in the part of described dielectric multilayer film corresponding to light receiving unit, described insulating barrier has one or more through holes or groove, described one or more through hole or groove be along the material identical materials that runs through and be filled with and form described first dielectric layer perpendicular to the direction of described insulating barrier first type surface, and described color-filter unit sees through according to the light when the definite wavelength of the area of one or more through holes when plane graph is observed described insulating barrier or groove and the ratio of the area of insulating barrier except that described one or more through holes or groove.
According to this structure, in insulating barrier, the different material of refractive index with the direction of the major surfaces in parallel of described insulating barrier on alternately be provided with.This changed incident light the effective refractive index of process, thereby can realize that wavelength selects.In this manner, utilize and to have the color-filter unit that thickness is substantially equal to lambda1-wavelength (approximately 500nm) and can realize color separation.Like this, color-filter unit can have thinner thickness, and has greatly limited the color separation function variation that is caused by skew ray.In addition, owing to do not need to change the thickness of insulating barrier, thus can simplify manufacturing process, and realize stable color separation characteristic.
Here, solid imaging element also comprises a plurality of light receiving units that are arranged in two-dimensionally on the Semiconductor substrate; Wherein, described insulating barrier has intilted side corresponding to the each several part of light receiving unit.
According to this structure, color-filter unit can be assembled incident light.This can further prevent the color separation variation.
Here, solid imaging element of the present invention also comprises a plurality of light receiving units that are arranged in two-dimensionally on the Semiconductor substrate; Have the different a plurality of parts of each thickness in the zone on the wherein said dielectric film, be transmitted into the light that is mapped on the corresponding light receiving element by this zone.
In single pixel, form insulating barrier by this method, can widen the passband that is used to enter the corresponding light receiving element, thereby and can improve wavelength sensitivity for each color with two or more different-thickness.
Here, the absorber element that is used to absorb by the light of described dielectric multilayer film reflection can be arranged on the catoptrical side of described dielectric multilayer film.In addition, described absorber element is the colour filter that contains pigment or dyestuff.This structure can reduce because the noise that the dielectric multilayer film reverberation causes takes place.
In addition, the present invention relates to dispose the camera of solid imaging element, described solid imaging element comprises the color-filter unit of being formed and seen through the incident light of selected wavelength X level by dielectric film, wherein said color-filter unit is the dielectric multilayer film that comprises two λ/4 multilayer films and be clipped in the dielectric film between described λ/4 multilayer films, and described this insulating barrier has the thickness except that λ/4.Have this structure, camera can provide the more best performance that reduces colour mixture.
In addition, the present invention relates to a kind of manufacture method that comprises the solid imaging element of color-filter unit, described color-filter unit sees through the incident light of selected wavelength X level, described color-filter unit forms by following step: first forms step, form first dielectric multilayer film on Semiconductor substrate, described first dielectric multilayer film is made of a plurality of λ/4 bloomings; Second forms step, forms first insulating barrier on described first dielectric multilayer film; First removes step, removes the part except that the first area in described first insulating barrier; The 3rd forms step, forms second insulating barrier on the first area of described first dielectric multilayer film and described first dielectric film; Second removes step, removes the second area of described second insulating barrier, and described second area is positioned on described first dielectric multilayer film; And the 4th form step, forms second dielectric multilayer film on described second insulating barrier and first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
When manufacturing has when using the solid imaging element of the film formed colour filter of dielectric multilayer, select in order to obtain desirable wavelength, need on nanoscale, control the thickness of each layer of colour filter.By utilizing the above-mentioned film under optimum condition, carry out to form step, by the thickness of each layer in the film formed multilayer of dielectric multilayer can be controlled in the brilliant unit that uniform thickness distributes+/-2% in.
In addition, the present invention relates to a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, described color-filter unit forms by following step: first forms step, form first dielectric multilayer film on Semiconductor substrate, described first dielectric multilayer film is made of a plurality of λ/4 bloomings; Second forms step, utilizes method for improving to form first insulating barrier on the first area of described first dielectric multilayer film; The 3rd forms step, forms second insulating barrier by utilizing method for improving on the second area of described first dielectric multilayer film, and described second area is different from described first area; And the 4th form step, forms second dielectric multilayer film on described first insulating barrier, second insulating barrier and first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
The insulating barrier that utilizes method for improving to form in the color-filter unit can be realized and the identical effect of favourable control thickness of insulating layer, and can reduce the variation of thickness.
In addition, the present invention relates to a kind of manufacture method that comprises the solid imaging element of color-filter unit, described color-filter unit sees through the light of selected wavelength X level, described color-filter unit forms by following step: first forms step, form first dielectric multilayer film on Semiconductor substrate, described first dielectric multilayer film is made of a plurality of λ/4 bloomings; Second forms step, forms first insulating barrier on described first dielectric multilayer film; First removes step, removes the part of described first insulating barrier except that the first area; The 3rd forms step, utilizes on described first insulating barrier in the second area of method for improving in the first area and do not form in described first dielectric multilayer film on the zone of first insulating barrier to form second insulating barrier; And the 4th form step, forms second dielectric multilayer film on described first insulating barrier and described the secondth insulating barrier, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
In order to form insulating barrier, need three layers to form step usually with three thickness.Yet according to above-mentioned manufacture method, the combination of etching and method for improving can only obtain to have the insulating barrier of three thickness by two-layer formation step.Thereby, can simplify colour filter and form technology.This can shorten the turnaround time, and reduces manufacturing cost.
In addition, the present invention relates to a kind of manufacture method that comprises the solid imaging element of color-filter unit, described color-filter unit sees through the incident light of selected wavelength X level, described color-filter unit forms by following step: first forms step, form first dielectric multilayer film on Semiconductor substrate, described first dielectric multilayer film is made of a plurality of λ/4 bloomings; Second forms step, forms first insulating barrier on described first dielectric multilayer film; First removes step, removes the part except that the first area in described first insulating barrier; The 3rd forms step, forms second insulating barrier on the first area of described first dielectric multilayer film and described first insulating barrier, and described second insulating barrier is made by the material different with described first insulating barrier; Second removes step, removes in described second insulating barrier part the interior part of except that first insulating barrier on second area; And the 4th form step, forms second dielectric multilayer film on described first insulating barrier, second insulating barrier and first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
In order to form insulating barrier, need three layers to form step usually with three thickness.Yet,, utilize the insulating barrier of forming by different materials and carry out selective etch can be only to form the insulating barrier that the step acquisition has three thickness with two-layer according to above-mentioned manufacture method.Thereby, can simplify colour filter and form technology.This can shorten the turnaround time, and reduces manufacturing cost.
In addition, the present invention relates to a kind of manufacture method of solid imaging element, described solid imaging element is included in a plurality of light receiving units of two-dimensional arrangements in the Semiconductor substrate, and the color-filter unit that sees through selected wavelength X level incident light, described color-filter unit comprises two dielectric multilayer films, described each film comprises a plurality of λ/4 bloomings respectively and is clipped in insulating barrier between described two dielectric multilayer films that described manufacture method comprises: the formation step that forms resist in each central authorities facing to a plurality of insulating barriers parts of described a plurality of light receiving units; And make the forming step of described insulating barrier moulding with each insulating barrier part of providing at least one inclined side by etching.
Here, in described formation step, form described resist to have inclined side.And, in described formation step, form described resist to have inclined side by changing exposure.
Here, solid imaging element also comprises: a plurality of light receiving units of arranging two-dimensionally in Semiconductor substrate; See through the color-filter unit of the light of different wave length according to the light receiving unit of correspondence, wherein according to the light wavelength that will be transmitted on the described relative light receiving element, below three can be different: (i) do not have or have a described insulating barrier; (ii) one of the thickness of described insulating barrier and material, or the (iii) thickness combination different of described insulating barrier with material.According to this structure, can realize color separation by multilayer dielectric film and according to existence, location and material and the thickness of the insulating barrier of corresponding light receiving element in multilayer film.
Here, solid imaging element also comprises: a plurality of light receiving units of arranging two-dimensionally in Semiconductor substrate; And according to the color-filter unit of corresponding light receiving unit through the light of different wave length, wherein two λ/4 multilayer films are constructed symmetrically about described insulating barrier.
In addition, the present invention relates to a kind of manufacture method that comprises the solid imaging element of color-filter unit, described color-filter unit sees through the incident light of selected wavelength X level, wherein said color-filter unit is the dielectric multilayer film that comprises two types of dielectric layers, all types of dielectric layers have different refractive indexes, in described dielectric multilayer film, the described light receiving unit of distance dielectric layer farthest has one littler in two refractive indexes.This structure can prevent that the light that enters color-filter unit is reflected, thus and realization high quality graphic.
In addition; the present invention relates to a kind of solid imaging element that comprises color-filter unit; described color-filter unit sees through the incident light of selected wavelength X level, wherein on one of first type surface of dielectric multilayer film or constitute described dielectric multilayer film any givenly protective layer is set between to dielectric layer.Here, described diaphragm is made up of silicon nitride.Have this structure, can improve the reliability and the moisture resistance of solid imaging element.
Here, solid imaging element also comprises: a plurality of light receiving units of arranging two-dimensionally on Semiconductor substrate; Be used to assemble a plurality of light focusing unit of incident light separately; Color-filter unit with a plurality of parts, described each several part sees through the light of the specific wavelength that depends on the corresponding light receiving element, and wherein color-filter unit is not smooth towards the first type surface of a plurality of light receiving units.According to this structure, between each light focusing unit and corresponding light receiving unit, can realize identical distance.Therefore, can use light focusing unit, and the different wave length of the light that receives with light receiving unit is irrelevant with the same focal length for solid imaging element.Therefore, can reduce the quantity of part type in the solid imaging element, simplify its manufacturing, and therefore reduce manufacturing cost.
In addition, the present invention relates to a kind of solid imaging element, it comprises: a plurality of light receiving units of arranging two-dimensionally in Semiconductor substrate; And the color-filter unit that sees through the incident light of wavelength X level, wherein said color-filter unit comprises the dielectric multilayer film with two types of dielectric layers, all types of have different refractive indexes, following (i) a plurality of light receiving units and (ii) the distance between the nearest high refractive index layer of the described a plurality of light receiving units of the high refractive index layer middle distance in described dielectric multilayer film fall into 1nm in the scope that comprises λ.According to this structure, colour filter and light receiving unit contact with each other.This can prevent more reliably because the color separation variation that skew ray causes.
In addition, the present invention relates to see through the solid imaging element that selected ripple is gone into the unit picture element of the colour filter of light of λ level and two-dimensional arrangements a kind of comprising, described constituent parts pixel comprises: the light receiving unit that is used to detect light intensity; And color-filter unit part, it is formed by seeing through one of them multilayer dielectric film of ruddiness, green glow and blue light, wherein said a plurality of unit picture element is arranged with Bayer pattern according to the color of the light that sees through the color-filter unit part, and feasible each area of four adjacent cells pixels that comprises has two unit picture elements that comprise the colour filter part that sees through blue light respectively.About its transmissison characteristic, dielectric multilayer film has for blue light at half place of maximum and is compared to the relative littler full duration with green glow of ruddiness.Yet by adopting above-mentioned layout, being used for the detection passband of blue light can be wideer and can improve the photosensitivity of solid imaging element.
As mentioned above, be formed on the photomask that above-mentioned wavelength is selected layer top, therefore can prevent to enter adjacent pixels from the skew ray of narrow angle because solid imaging element of the present invention has.
And, owing on substrate, form lenticule in each hole in the photomask, thus can reduce most probable enter neighbor from wide angle enter the oblique fire light quantity of substrate and increase accumulate in the corresponding pixel of lenticule on light quantity.
It is colour filter that described wavelength is selected layer, and owing to have above-mentioned layout, the light that sees through photomask will only penetrate required colour filter and enter light receiving unit subsequently, can prevent colour mixture.
Because wavelength selects layer to be formed by inorganic material, therefore can utilize certain some operation in semiconductor manufacturing process to form.Therefore, can simplify the manufacturing of solid imaging element.
And, select layer owing to can construct wavelength, so select the layer of wavelength can do thinlyyer and can reduce distance between photomask and the light receiving element with multilayer film.Therefore, can prevent the light quantity that colour mixture and increase are collected.
Solid imaging element of the present invention comprises by the wavelength of the photonic crystal structure of the light wavelength of selecting to enter the corresponding light receiving element selects layer, and wherein light receiving element is arranged on the Semiconductor substrate two-dimensionally.Because wavelength selects layer to be characterised in that by the photonic crystal structure,, and can stop other light so when even the wavelength that enters one of a plurality of pixels when skew ray is selected layer, photonic crystal is the vertical lead-in light receiving element of the light of wavelength in specified scope.Therefore, the light that enters the colour filter of a pixel can not enter in any colour filter part of neighbor, and can greatly prevent colour mixture.
Here, the present invention includes camera with above-mentioned solid imaging element.When use has the camera of above-mentioned feature, can obtain low colour mixture and high-quality image.
In solid imaging element manufacture method of the present invention, forming above-mentioned photoelectric conversion unit, separating according to wavelength in the manufacturing process of dielectric multilayer film of incident light, partly change thickness of insulating layer and use the film that when forming film, can produce different-thickness effectively to form technology, rather than the film that has formed is done quarter or the wet thickness that changes film of carving with the method that realizes color separation function.This is controlling diaphragm thickness better, and reduce inhomogeneous in the film.
For incident light is separated according to wavelength, above-mentioned solid imaging element has dielectric multilayer film above photoelectric conversion unit.Here, can realize color separation by in dielectric multilayer film, being included in the single dielectric layer that has different-thickness between the each several part.This expression utilizes to have the dielectric multilayer film that thickness is substantially equal to lambda1-wavelength (approximately 500nm) and can realize color separation.Therefore, colour filter can be thinner, and can greatly reduce because the color separation variation that skew ray causes.
Description of drawings
Figure 1 shows that the sectional view of solid imaging element structure;
Figure 2 shows that the plane graph of first embodiment of the invention solid imaging element structure;
Figure 3 shows that the sectional view of first embodiment of the invention solid imaging element structure;
Figure 4 shows that the sectional view of fifth embodiment of the invention solid imaging element structure;
Figure 5 shows that the sectional view of the manufacture method of fifth embodiment of the invention colour filter;
Figure 6 shows that the sectional view of explanation according to the manufacture method of fifth embodiment of the invention colour filter;
Figure 7 shows that sectional view about the manufacture method of the colour filter of sixth embodiment of the invention;
Figure 8 shows that the sectional view of manufacture method of the colour filter of seventh embodiment of the invention;
Figure 9 shows that the sectional view of manufacture method of the colour filter of eighth embodiment of the invention;
Figure 10 shows that the transmissison characteristic figure of fifth embodiment of the invention colour filter;
Figure 11 shows that about the optical thickness of the colour filter intermediate interlayer of fifth embodiment of the invention observed transmissison characteristic figure when designated value departs from;
Figure 12 shows that the sectional view of manufacture method of the colour filter of ninth embodiment of the invention;
Figure 13 shows that spectrum character diagram about the colour filter of ninth embodiment of the invention;
Figure 14 shows that dielectric multilayer film is according to having or not wall and the different schematic diagram of transmissison characteristic;
Figure 15 shows that the sectional view of manufacture method of the colour filter of tenth embodiment of the invention;
Figure 16 shows that the sectional view of first manufacture method of the colour filter of eleventh embodiment of the invention;
Figure 17 shows that the sectional view of second manufacture method of the colour filter of eleventh embodiment of the invention;
Figure 18 shows that the sectional view of manufacture method of the colour filter of twelveth embodiment of the invention;
Figure 19 shows that the sectional view of manufacture method of the colour filter of thirteenth embodiment of the invention;
Figure 20 shows that the sectional view of manufacture method of the colour filter of fourteenth embodiment of the invention;
The sectional view of the manufacture method of the colour filter for variant embodiment of the present invention (1) shown in Figure 21;
Shown in Figure 22 is transmissison characteristic figure about the colour filter of variant embodiment of the present invention (1);
Shown in Figure 23 is the sectional view of the colour filter structure of variant embodiment of the present invention (2);
Shown in Figure 24 is transmissison characteristic figure about the colour filter of variant embodiment of the present invention (2);
Shown in Figure 25 is the sectional view of the colour filter structure of variant embodiment of the present invention (3);
Shown in Figure 26 is transmissison characteristic figure about the colour filter of variant embodiment of the present invention (3);
Shown in Figure 27 is the structural section figure of the solid imaging element of variant embodiment of the present invention (4);
Shown in Figure 28 is the transmissison characteristic figure of the colour filter of variant embodiment of the present invention (4);
Shown in Figure 29 is the transmissison characteristic figure of the colour filter of variant embodiment of the present invention (5); And
Shown in Figure 30 is the arrangement of the colour filter of variant embodiment of the present invention (6).
Embodiment
Illustrate with reference to the accompanying drawings about solid imaging element of the present invention and manufacture method and camera.
(1) first execution mode
Figure 2 shows that the plane graph of the solid imaging element structure of first execution mode.As shown in Figure 2, in the solid imaging element of first execution mode, be two-dimensional arrangements as the unit picture element (dash area) of light receiving unit.Vertical transfer register is selected delegation, and horizontal shifting register is chosen in the signal in the pixel in the selected row.Thus, by the colour signal (color signal) of output amplifier (not shown) output corresponding to each pixel.Drive circuit makes vertical transfer register, horizontal shifting register and output amplifier work.
Figure 3 shows that the sectional view of solid imaging element 2 structures of first embodiment of the invention.Specifically, it shows the sectional view of three neighbors.As shown in Figure 3, solid imaging element 2 comprises N-N-type semiconductor N substrate 201, P-type semiconductor layer 202, light receiving element 203R, 203B and 203B, insulating barrier 204 and 206, colour filter 205R, 205G and 205B, photomask 207 and lenticule 208.
P-N-type semiconductor N substrate 202 is formed on the N-N-type semiconductor N substrate 201.The photodiode (photo-electric conversion element) that light receiving element 203R, 203G and 203B are formed and contacted with printing opacity dielectric film 204 by the P-N-type semiconductor N substrate layer that is injected with N-type impurity.Light receiving element 203R, 203G and 203B are separated from each other by the appropriate section of P-N-type semiconductor N substrate, and each appropriate section of P-N-type semiconductor N substrate is as the partitioned portion between the adjacent two elements.Colour filter 205R, 205G and 205B are formed on the insulating barrier 204.
Therefore, when R, G and B represented the primary colors of light, the each several part of colour filter 205R, 205G and 205B only saw through R, G or B accordingly.Colour filter 205R, 205G and 205B contain the fine pigments granular pattern of being made up of inorganic material, and its part is arranged with Bayer or the method for complementary colored mosaic is arranged.
Printing opacity insulating barrier 206 is formed on colour filter 205R, 205G and the 205B.Lenticule 208 is provided with correspondingly with light receiving element, and is separated from each other by photomask 207 between the lenticule.The light that incides on the photomask reflects.On the other hand, inciding lenticule 208 light on one of any concentrates on corresponding light receiving element 203R, 203G or the 203B.
Have this structure, compare the distance that can reduce between colour filter and the receiving element with conventional art, and therefore can reduce the possibility that skew ray enters receiving element.For example, if one of them width of receiving element 203R, 203G or 203B is 3 μ m, compares with conventional art so and can reduce colour mixture about 80%.In addition, utilize the semiconductor related process can integrally make solid imaging element 2, and therefore can simply make solid imaging element 2 at low cost.
[2] second execution modes
The following describes second execution mode of the present invention.The solid imaging element of second execution mode is more similar to a great extent to first execution mode, comprises photonic crystal but its difference is colour filter described here.
Photonic crystal be a kind of be thereby that the differing dielectric constant of example and refractive index materials are arranged with alternating layer and made two contact layers have the micro-structural of the thickness of optical wavelength level such as Semiconductor substrate and air.Only see through the colour filter of predetermined wavelength light except being used as, photonic crystal has the characteristic of incident light along the predetermined direction guiding.Introduce the photonic crystal that does not see through corresponding to the light of the particular range wavelength of its band gap width (band gap) in the document below, promptly have the photonic crystal of photon band gap:
NODA?Susumu，MORIMOTO?shigeo，“Naimen?heterofotonikku?kesshouniyoru?kikari?nanodebaisu?no?jitsugen”Kagku?gijutsu?shinkou?danhou?dai?323go(Realizing?optical?nano-devices?using?in-plane?hetero-photonic?crystals，Janpanese?Science?and?Technology?Corportaion?Journal，Issue?323).
If this photonic crystal is as colour filter, except can optionally seeing through the primary colors of light, colour filter can also be regulated the direct of travel of light, therefore further prevents colour mixture.
[3] the 3rd execution modes
The following describes the 3rd execution mode of the present invention.The solid imaging element of the 3rd execution mode is similar to a great extent to second execution mode, but photomask position difference described here.
Figure 4 shows that the sectional view of the solid imaging element structure of the 3rd execution mode.As shown in Figure 4, solid imaging element 3 comprises N-N-type semiconductor N substrate 301, P-type semiconductor layer 302, light receiving element 303R, 303B and 303B, insulating barrier 304 and 307, photomask 305, colour filter 306R, 306G and 306B and lenticule 308.
Solid imaging element 3 is constructed so that P-N-type semiconductor N substrate 302, light receiving element 303R, 303B and 303B, printing opacity insulating barrier 304, photomask 305, colour filter 306R, 306G and 306B and lenticule 308 form corresponding layer on N-N-type semiconductor N substrate 301. Colour filter 306R, 306G are made up of photonic crystal in the mode identical with the colour filter of the 3rd execution mode with 306B.
When photomask is arranged on the light receiving element side of colour filter 306R, 306G and 306B by this way, can prevents to enter to close in the receiving element and enter light receiving element because colour filter 306R, 306G or 306B have changed the light of its normal direct of travel.For example, when skew ray enters the edge of colour filter part 306G and do not have photomask 305, then light will enter light receiving element 303B.According to third embodiment of the invention, can prevent because the colour mixture that skew ray causes.
[4] the 4th execution modes
The following describes the 4th execution mode of the present invention.The solid imaging element of the 4th execution mode is similar to second execution mode, it is characterized in that the structure of colour filter.
The colour filter of the 4th execution mode forms by dielectric multilayer film, in this film such as silicon dioxide (SiO
2) low-index material and such as silicon nitride (Si
3N
4) high-index material alternately stacking.Do not need many speeches, constitute the stacking direction and the stacking direction coupling that constitutes solid imaging element 2 of the layer of dielectric multilayer film.All layers in the formation dielectric multilayer film except that one deck all have substantially the same optical thickness.Here, Ceng optical thickness is expressed as the product value nd of the thickness d of the refractive index that forms this layer material and this layer.
According to this structure, can reduce the thickness of colour filter, so the distance between light receiving element and the photomask can shorten.Therefore, according to four embodiment of the invention, can prevent the colour mixture that causes by skew ray more reliably.
In order to improve lenticular light gathering efficiency, must increase its condensing angle.Yet even do like this, the solid imaging element of the 4th execution mode also can prevent colour mixture.Therefore, when continuing to prevent colour mixture, can improve the photosensitivity of solid imaging element.
[5] the 5th execution modes
The following describes the solid imaging element of the 5th execution mode.The solid imaging element of the 5th execution mode has the structure substantially the same with the solid imaging element of the 4th execution mode, but the structure difference of dielectric multilayer film.
Figure 5 shows that the sectional view of the solid imaging element structure of the 5th execution mode.As shown in Figure 5, solid imaging element 4 comprises N-N-type semiconductor N substrate 401, P-type semiconductor layer 402, light receiving element 403R, 403B and 403B, insulating barrier 404, photomask 405, colour filter 406 and lenticule 407.
The colour filter 406 of the 5th execution mode is characterised in that dielectric multilayer film, titanium dioxide (TiO in this film
2) layer 406a, 406c, 406e and 406g and silicon dioxide (SiO
2) layer 406b, 406d and 406f formation multilayer alternately.
Figure 6 shows that the manufacturing process of colour filter 406.Notice that Fig. 6 (a) does not illustrate irrelevant photomask 405 and light receiving element 403R, 403G and the 403B with the manufacturing process of colour filter 406 to Fig. 6 (e).Beginning shown in Fig. 6 (a), utilizes radio-frequency (RF) sputtering equipment to form TiO in the following sequence on insulating barrier 404
2 Layer 406a, SiO
2Layer 406b, TiO
2Layer 406c, SiO
2Layer 406d.
The colour filter 406 of the 5th execution mode has λ/4 sandwich constructions of the designated centers wavelength X of 530nm.TiO
2Layer 406a and 406c, SiO
2Layer 406b has the optical thickness of λ/4=132.5nm separately, and SiO
2Layer 406d has the optical thickness of 150nm.
Then, shown in Fig. 6 (b), at SiO
2Form resist 50 in the blue area on the layer 406d.Specifically, resist 50 passes through at SiO
2Layer 406d goes up painting erosion resistant agent, the resist of coating heat-treated (prebake), utilized such as the exposure sources of stepping lithographic equipment and expose, utilize material such as organic solvent that it is developed to it and once more it is heat-treated formation such as (afterwards curing) operation.Resist 50 has the thickness of 1 μ m.Here, the blue area is that colour filter 406 is designated as the zone that can make light receiving element 403B detect blue light.
Then, remove SiO by etching
2The part that is not covered among the layer 406d by resist 50.Specifically, thisly be etched to the dried quarter of utilizing CF gas, and be CF at etching gas
4, gas flow rate is that 40sccm, RF power are that 200W and vacuum degree are to carry out under the condition of 0.050Torr.
Note, because for hydrofluoric acid SiO
2And TiO
2Etching selectivity very high, so can carve with replacing doing the wet quarter with hydrofluoric acid etc.In this case, by with SiO
2The ratio that layer 406d and resist 50 immerse with 1 to 4 is mixed with the SiO that came etching to have resist 50 in five minutes in the hydrofluoric acid of ammonium fluoride solution
2Layer 406d.Thereby, SiO
2Layer 406d is treated to the state shown in Fig. 6 B.
Then, shown in Fig. 6 (c),, utilize the RF sputtering equipment to form SiO utilizing after organic solvent etc. removes resist 50
2Layer.New SiO
2Layer has the optical thickness of 45nm.This represents SiO
2The blue area of layer 406d has the optical thickness of 195nm, and SiO
2The remainder of layer 406d has the optical thickness of 45nm.
Then, shown in Fig. 6 (d), at SiO
2Form resist 51 in the blue area of layer 406d and the red sector, and remove SiO by etching
2The zone that is not covered among the layer 406d by resist 51.Remove resist 51 then.Here, red sector is that colour filter 406 is designated as the zone that can make light receiving element 403R detect ruddiness.
Then, shown in Fig. 6 (e), utilize the RF sputtering equipment on whole RGB zone, to form TiO with following order
2Layer 406e, SiO
2Layer 406f and TiO
2Layer 406g.Here, TiO
2Layer 406e, TiO
2Layer 406g and SiO
2Layer 406f has the optical thickness of λ/4 separately.
Can make the colour filter 406 of second execution mode by this way.And, adopt above-mentioned manufacture method can make the varied in thickness of each layer remain on+/-2% in, therefore and can improve the color separation precision of colour filter.
[6] the 6th execution modes
The following describes the solid imaging element of sixth embodiment of the invention.Have substantially the same structure according to the solid imaging element of the 6th execution mode with solid imaging element according to the 5th execution mode, but the manufacture method difference of colour filter.The following describes the 6th execution mode, especially pay close attention to the manufacture method of colour filter.
Figure 7 shows that the manufacturing process that is used for the 6th execution mode.Identical to Fig. 6 (e) with Fig. 6 (a), Fig. 7 (a) has omitted photomask etc. to Fig. 7 (g).
Beginning shown in Fig. 7 (a), forms TiO in the following sequence on insulating barrier 604
2 Layer 606a, SiO
2Layer 606b and TiO
2Layer 606c is to form λ/4 sandwich constructions.And, identical with the 5th execution mode, at TiO
2Form the resist 60 of 2.5 μ m thickness in red sector on the layer 606c and the Green Zone.
Then, shown in Fig. 7 (b), utilize the RF sputtering equipment in blue, red and Green Zone, to form SiO
2Layer 606d.SiOx
2The optical thickness of layer 606d is 195nm.
Then, shown in Fig. 7 (c), utilize removal resists 60 such as organic solvent.Remove SiO like this
2Be formed on the part (stripping means) on the resist 60 in the layer, that is, and SiO
2The red sector and the Green Zone of layer, and stay SiO
2The blue area of layer 606d.
Then, shown in Fig. 7 (d), in blue area and Green Zone, form resist 61.
Then, shown in Fig. 7 (e), in blue, red and Green Zone, form SiO
2Layer.Here, new SiO
2Layer has the optical thickness of 45nm.
Then, remove resist 61, stay SiO
2Be formed on the part on the resist 61 in the layer.That is to say, shown in Fig. 7 (e), remove SiO
2The blue area and the Green Zone of layer stay SiO
2The red sector of layer.
At last, shown in Fig. 7 (g), on whole RGB zone, form TiO with following order
2Layer 606e, SiO
2Layer 606f and TiO
2Layer 606g.
Foregoing description shows that the manufacture method of utilizing the 6th execution mode also can make the solid imaging element of the 5th execution mode, and promptly the manufacture method of the 6th execution mode can produce the effect identical with the manufacture method of the 5th execution mode.Specifically, a plurality of layers each layer thickness variation that forms colour filter can remain on+and/-2%, therefore can make more high-precision solid imaging element.
[7] the 7th execution modes
The following describes the solid imaging element of seventh embodiment of the invention.Similar to the 6th execution mode, the solid imaging element of the 7th execution mode is characterised in that the manufacture method of colour filter, and similar basically to the solid imaging element of the 5th execution mode.Yet the solid imaging element of the 7th execution mode is different with the 5th execution mode in the following manner.The colour filter of the 5th execution mode is included in the SiO that extends on red and the blue area
2Layer and in each red sector and blue area, have different optical thicknesses, and the colour filter of the 7th execution mode comprises the SiO that also extends on the Green Zone
2SiO in floor and each district in the red, green and blue district
2Layer has different optical thicknesses.
Figure 8 shows that the manufacture method of the colour filter of the 7th execution mode.Beginning shown in Fig. 8 (a), forms TiO in the following sequence on insulating barrier 704
2Layer 706a, SiO
2Layer 706b, TiO
2Layer 706c and SiO
2Layer 706d.TiO
2Layer 706a and 706c and SiO
2Layer 706b has the optical thickness of λ/4 separately, and SiO
2Layer 706d has the optical thickness of 195nm.
Then, at SiO
2Form resist 70 in Green Zone on the layer 706d and the blue area.Then, shown in Fig. 8 (b), remove SiO by etching
2Among the layer 706d corresponding to the part of red sector.This etch process can be to adopt the dried quarter of CF gas or the wet quarter of using hydrofluoric acid.
Then, shown in Fig. 8 (c), utilize removal resists 70 such as organic solvent, and at SiO
2Form resist 71 in the blue area on the layer 706d.
Then, shown in Fig. 8 (d), utilize the RF sputtering equipment on whole RGB zone, to form the SiO of optical thickness for 55nm
2Layer.
Then, utilize organic solvent etc. to remove resist 71.Shown in Fig. 8 (e), remove SiO like this
2Be formed on the part (stripping means) on the resist 71 in the layer, i.e. SiO
2The optical thickness of layer 706d in the Green Zone is 250nm, the optical thickness in the blue area is 195nm and be 55nm in red sector.
Then, form TiO in the following sequence
2Layer 706e, SiO
2Layer 706f and TiO
2Layer 706g, thus the colour filter of the 7th execution mode finished.
Work as SiO
2Layer is when having the optical thickness of three different stages, for example SiO in the colour filter of the 7th execution mode
2Layer 706d forms three different parts usually respectively.Yet, in the manufacture method of the 7th execution mode, only need two-layer formation step just can form to have the SiO of the optical thickness of three ranks (55nm, 195nm and 250nm)
2Layer 706d.Therefore, the turnaround time can be shortened (TAT) and reduce manufacturing cost.
[8] the 8th execution modes
The following describes the solid imaging element of eighth embodiment of the invention.The solid imaging element of the 8th execution mode has substantially the same structure with the solid imaging element of the 5th execution mode, but the manufacture method difference of colour filter.
In the colour filter of the solid imaging element of the 5th execution mode, SiO
2Layer and TiO
2Layer replaces each other.Yet, in the solid imaging element of the 8th execution mode, form the light wavelength that magnesium oxide (MgO) layer sees through with adjusting extraly.The following describes the 8th execution mode, concentrate on the manufacture method of colour filter.
Figure 9 shows that the manufacture method of the 8th execution mode colour filter.Beginning shown in Fig. 9 (a), forms TiO in the following sequence on insulating barrier 804
2 Layer 806a, SiO
2Layer 806b, TiO
2Layer 806c and SiO
2Layer 806d.TiO
2Layer 806a and 806c and SiO
2Layer 806b has the optical thickness of λ/4 separately, and SiO
2Layer 806d has the optical thickness of 195nm.
Then, at SiO
2Layer 806d goes up and forms resist 80 and remove the part of resist 80 corresponding to red sector.Then, shown in Fig. 9 (b), remove SiO by etching
2Among the layer 806d corresponding to the part of red sector.
Shown in Fig. 9 (c), utilize the RF sputtering equipment on whole RGB zone, to form the magnesium oxide layer 81 of optical thickness for 55nm.
Then, shown in Fig. 9 (d), in Green Zone and red sector, form resist 82, and remove the part of MgO layer 81 corresponding to the blue area.Here, with to SiO
2The similar mode of layer 706d by utilizing CF gas dried quarter or utilize hydrofluoric acid remove this part of MgO layer wet quarter.
Then, shown in Fig. 9 (e), remove resist 82, and shown in Fig. 9 (f), form TiO in the following sequence
2Layer 806e, SiO
2Layer 806f and TiO
2Layer 806g.
By this method, SiO in the Green Zone
2Layer 806d and 81 combination of MgO layer are to provide the optical thickness of 250nm, SiO in the blue area
2Layer 806d has the optical thickness of 195nm, and MgO layer 81 has the optical thickness of 55nm in red sector, thereby can realize required colour filter characteristic.
As mentioned above, utilize to have and provide optionally two kinds of material (SiO of etch-rate
2And MgO) carry out selective etch then and can only form the insulating barrier with three rank thickness with two-layer formation step, one of them step is used to form SiO
2Layer 806d and another step is used to form MgO layer 81.Therefore, can shorten the TAT that is used for solid imaging element, and reduce manufacturing cost.
[9] Performance Evaluation
The following describes the assessment result of transmissison characteristic of the colour filter 406 of the 5th execution mode.The colour filter that can notice the 6th execution mode has similar transmissison characteristic.Figure 10 shows that the transmissison characteristic figure of the 5th execution mode colour filter 406.As shown in figure 10, colour filter 406 can accurately be divided into red, green and blue with incident light.Be also noted that: though do not provide assessment result about the 4th and the 5th execution mode here, it also can accurately be divided into red, green and blue with incident light.
Figure 11 shows that SiO in the colour filter 406 of the 5th execution mode
2Observed transmissison characteristic figure when the optical thickness of layer 406d (following will be clipped between the layer that optical thickness is λ/4 but its optical thickness is not the layer of λ/4 is called " wall ") departs from designated value.Specifically, Figure 11 shows that optical thickness bias be 0 and+/-situation during 3nm.
As shown in figure 11, the difference of 3nm makes the peak wavelength that sees through light change about 10nm in the optical thickness of wall.That is to say that when the thickness of wall departs from only 3nm of designated value, the precision of RGB color separation will be lost very big, and solid imaging element shows as and can't use.For this reason, when forming wall, need accurately control its optical thickness.
Relatively, the manufacture method of the above-mentioned execution mode of the present invention can accurately form wall.Thereby can suppress, and the photosensitivity that can in the solid imaging element minimization process, occur loss and colour mixture by the inhomogeneous wavelength selectivity variation that causes of optical thickness at interval.
Usually, by making and light receiving element that colour filter separates etc., they are combined make solid imaging element then.Yet in the present invention, first manufacturing process makes colour filter and light receiving element etc. with a series of crystalline substance, and therefore can improve productive rate and reduce manufacturing cost.
Here, as long as wall has suitable optical thickness, the number of plies that forms colour filter so can be 7 layers or more many or still less than 7 layers.In addition, the number of plies in each side of wall can be identical or different.
And the material that forms the layer of colour filter 406 is not limited to above-mentioned TiO
2, SiO
2And MgO.Also can use tantalum oxide (Ta
2O
5), zirconia (ZrO
2), a silicon nitride (SiN), silicon nitride (Si
3N
4), aluminium oxide (Al
2O
3), magnesium fluoride (MgF
2) or hafnium oxide (HfO
3).
[10] the 9th execution modes
The following describes the solid imaging element of ninth embodiment of the invention.The solid imaging element of the 9th execution mode has the structure similar to the 7th execution mode, it is characterized in that the manufacture method difference of its colour filter.
Figure 12 shows that the manufacture method of the colour filter of the 9th execution mode.Shown in Figure 12 (a), utilize the RF sputtering equipment on insulating barrier 904, to form TiO successively with following order
2Layer 906a, SiO
2Layer 906b, TiO
2Layer 906c, SiO
2Layer 906d and TiO
2Layer 906e.TiO
2Layer 906a and 906c and SiO
2Layer 906b and 906d form the sandwich construction of λ/4.TiO
2Layer 906e is wall.
Then, shown in Figure 12 (b), on wall 906e, form the red sector of resist pattern 90 and etching wall 906e.
Subsequently, shown in Figure 12 (c), remove resist pattern 90, form resist pattern 91, and the Green Zone of etching wall 906d.
Then, shown in Figure 12 (d), on wall 906e, form SiO
2Layer 906f, TiO
2Layer 906g, SiO
2Layer 906h and TiO
2Layer 906i, thus colour filter finished.The optical thickness of colour filter is 622nm in the blue area, is 562nm in red sector, and is 542nm in the Green Zone.
(1) spectral characteristic
The following describes the spectral characteristic of the 9th execution mode colour filter.Figure 13 shows that the spectrum character diagram of the colour filter of the 9th execution mode.Suppose TiO
2The refractive index of (high-index material) is 2.5, SiO
2The refractive index of (low-index material) be 1.45 and the optical thickness of wall and physical thickness respectively in the blue area for 200nm and 80nm, in red sector for 50nm and 20nm, in the Green Zone, be 0nm and 0nm, utilize the eigenmatrix method to obtain spectral characteristic.At the physical thickness of Green Zone intermediate interlayer is the meaning of 0nm and be the SiO of λ/2 by optical thickness altogether in the Green Zone
2It is equivalent in meaning that layer 906d and 906f play wall.
As can be seen from Figure 13, the thickness of control interval layer can change through light wavelength.
The attention high-index material can use silicon nitride, tantalum pentoxide, zinc oxide etc. to replace TiO
2, and low-index material can be to remove SiO
2Outside material.
(2) transmissison characteristic
The following describes the transmissison characteristic of dielectric multilayer film.Figure 14 shows that dielectric multilayer film is according to having or not wall and different transmissison characteristic figure.Here, logarithm be 10 and the centre wavelength set be under the condition of 550nm, only for vertical incidence light, utilize matrix method to obtain the transmissison characteristic shown in Figure 14 A and Figure 14 B based on fresnel coefficient.In each of Figure 14 (a) and Figure 14 (b), be transmissivity along vertical axis, and be incident light wavelength on the dielectric multilayer film along trunnion axis.
Shown in Figure 14 (a), when the whole dielectric multilayer film of being made up of silicon nitride and silicon dioxide was λ/4 multilayer films, dielectric multilayer film reflection wavelength band concentrated near the light the specified wavelength.Here, along with the refringence increase of low-index material that forms multilayer film and high-index material, reflection bandwidth can broaden.
On the other hand, shown in Figure 12 (b), when dielectric multilayer film comprises optical thickness is not the wall of λ/4 and when the upside of wall and downside are configured with λ/4 multilayer films symmetrically, can obtain seeing through near the colour filter of the wavelength of the λ/4 multilayer film reflection bandwidths specified wavelength.And, if change the thickness of wall, can change peak wavelength.
In the 9th execution mode, can consider this characteristic, and dielectric multilayer film is as colour filter.The thickness of colour filter can be the wavelength level of incident light (approximately 500nm).Therefore can obtain the solid imaging element of smaller szie, and prevent the colour mixture that causes by skew ray effectively.
In addition, owing to utilize a series of semiconductor fabrication process, can form with light receiving element according to the colour filter of the 9th execution mode, so the steady quality of solid imaging element and manufacturing cost reduce.
[11] the tenth execution modes
The following describes the tenth execution mode of the present invention.The solid imaging element of the tenth execution mode has the structure substantially the same with the solid imaging element of above-mentioned execution mode, and difference is the structure of the wall that contains in the colour filter.In the above-described embodiment, ad hoc determine to see through the wavelength of colour filter by the thickness that changes wall.Yet in the tenth execution mode, the thickness that does not change wall by utilizing two kinds of different materials to form wall determines to see through the light wavelength of colour filter.Specifically, in the tenth execution mode, by with the direction of the major surfaces in parallel of substrate on the different material of two kinds of refractive indexes alternately be set regulate light wavelength through colour filter.
Figure 15 shows that the manufacture method of the colour filter of the tenth execution mode.Beginning shown in Figure 15 (a), forms TiO in the following sequence on insulating barrier 1004
2 Layer 1006a, SiO
2Layer 1006b, TiO
2Layer 1006c, SiO
2Layer 1006d and TiO
2Layer 1006e.TiO
2Layer 1006e is wall.
Then, shown in Figure 15 (b), at TiO
2Layer 1006e goes up and forms resist pattern 1000.
Then, utilize resist pattern 1000 etching TiO
2Layer 1006e, and at TiO
2Form a plurality of through holes or groove in the red sector of layer 1006e.Here, through hole or groove are along being parallel to TiO
2The direction setting of the first type surface of layer 1006e.When observing TiO with two-dimensional plane figure
2The layer 1006e red sector the time, the area ratio of etching region (groove) and non-etching region is 4: 1.Therefore, TiO
2The refractive index of the red sector of layer 1006e is limited by following expression formula:
((SiO
2Refractive index) * 4/5)+((TiO
2Refractive index) * 1/5)
Here, remove TiO fully by etching work procedure
2The Green Zone of layer 1006e.
Then, at TiO
2On the layer 1006e layer and SiO
2Passed through TiO on the layer 1006d
2The part of layer 1006e is removed on the part that is exposed and is formed SiO successively with following order
2Layer 1006f, TiO
2Layer 1006g, SiO
2Layer 1006h and TiO
2Layer 1006i, and finish colour filter.
Have this structure, make the required number of steps of solid imaging element, so can shorten TAT and reduce manufacturing cost owing to can reduce.
[12] the 11 execution modes
The following describes the solid imaging element of the 11 execution mode of the present invention.The solid imaging element of the 11 execution mode has the structure substantially the same with the solid imaging element of above-mentioned execution mode, and difference is that colour filter concentrates on incident light on the light receiving element.
Figure 16 shows that the manufacturing step of the colour filter of the 11 execution mode.Beginning shown in Figure 16 (a), forms TiO in the following sequence on insulating barrier 1104
2 Layer 1106a, SiO
2Layer 1106b, TiO
2Layer 1106c, SiO
2Layer 1106d and TiO
2Layer 1106e.TiO
2Layer 1106e is wall.
Then, shown in Figure 16 (b), at TiO
2Layer 1106e goes up and forms resist pattern 1100, etching TiO then
2The red sector of layer 1106e.
Subsequently, shown in Figure 16 (c), at TiO
2Layer 1106e goes up and forms resist pattern 1101, etching TiO then
2The Green Zone of layer 1106e.
Then, shown in Figure 16 (d), at TiO
2Each district central authorities that floor 1106e goes up the red, green, blue district form resist pattern 1102.
Then, shown in Figure 16 (e), utilize photoetching process and dried method processing at quarter TiO
2Each red, green and blue district of floor 1106e is to have the side of inclination.
At last, remove resist pattern 1102, and form SiO
2Layer 1106f, TiO
2Layer 1106g, SiO
2Layer 1106h and TiO
2Layer 1106i, thus solid imaging element finished.Here, TiO as mentioned above
2Each red, green and blue district of floor 1106e has the side of inclination, by SiO
2Layer 1106f, TiO
2Layer 1106g, SiO
2Layer 1106h and TiO
2Floor 1106i forms the side that each laminated red, green and blue district also has inclination.
The light that side with this inclination, the side by each red, green and blue district enter colour filter concentrates on the central authorities in each district.Therefore, the colour filter of the 11 execution mode can prevent the color separation variation that caused by skew ray more reliably.In addition, partly realized being used to collect the lenticular function of incident light about the colour filter of the 11 execution mode.Therefore, thinner lenticule can be used, and the solid imaging element of smaller szie can be realized.
Notice that following manufacture can be used to also realize that each red, green and blue district has the colour filter of inclined side, thereby and obtain and above-mentioned similar effect.Figure 17 shows that and be used for another manufacture method that each red, green and blue district has the colour filter of inclined side.Figure 17 (a) is identical to the step shown in Figure 16 (c) with Figure 16 (a) to step shown in Figure 17 (c).After these steps, shown in Figure 17 (d), form the resist pattern 1203 that has corresponding to red, green and blue district part, each several part has inclined side.Figure 17 (e) is identical with the step shown in Figure 16 (e) and Figure 16 (f) with the step shown in 17 (f).Thereby, can obtain by this method and the identical colour filter of former described colour filter.
And, need not give unnecessary details, in the mode identical, can obtain the littler solid imaging element of size, improve productive rate and reduce cost with the manufacture method of the 11 execution mode with the manufacture method of above-mentioned execution mode.
[13] the 12 execution modes
The following describes the 12 execution mode of the present invention.The solid imaging element of the 12 execution mode has the structure substantially the same with the solid imaging element of above-mentioned execution mode, and difference is the shape of the wall that contains in the colour filter.In the above-described embodiment, the thickness at each red, green and blue district intermediate interlayer is uniform.Yet the 12 execution mode is characterised in that the thickness of wall changes in each district.This makes transmittance passband (passband) broaden.
Figure 18 shows that the manufacture method of the colour filter of the 12 execution mode.Shown in Figure 18 (b), increased and utilized resist pattern 1301 to remove TiO
2The etching step of the part of the blue area of layer 1306e.Since the step that should add, TiO
2The blue area thickness of layer 1306e has two values.This makes the passband that is used for blue light broaden, and therefore can improve the transmissison characteristic of colour filter.
Thickness at the blue area intermediate interlayer is not limited to have two values, but three or more values can be arranged.In addition, the change of space layer is not limited to the blue area.Also can change wall at red sector or/and the thickness in the Green Zone.
In addition, high-index material can use silicon nitride, tantalum pentoxide, zinc oxide etc. to replace TiO
2, and low-index material can remove SiO
2Outside other material.
The 12 execution mode makes the thickness of colour filter remain on the magnitude of lambda1-wavelength.Therefore, can prevent because the colour mixture that causes of skew ray, and can realize the solid imaging element that size is littler.In addition, can improve productive rate, and reduce manufacturing cost.
[14] the 13 execution modes
The following describes the 13 execution mode of the present invention.The solid imaging element of the 13 execution mode has the structure substantially the same with the solid imaging element of above-mentioned execution mode, and difference is that the thickness of the wall that contains in the colour filter is continually varying.
Figure 19 shows that the manufacture method of the colour filter of the 13 execution mode.Beginning shown in Figure 19 (a), forms TiO in the following sequence on insulating barrier 1404
2 Layer 1406a, SiO
2Layer 1406b, TiO
2Layer 1406c, SiO
2Layer 1406d and TiO
2Layer 1406e.
Then, shown in Figure 19 (b), form resist pattern 1401 by photo-mask process, its thickness reduces to the Green Zone through red sector gradually from the blue area.Photo-mask process is included in the transmissivity that continuously changes chromium (Cr) film on the mask in the exposure process according to required slope, thereby makes the light transmission features of mask gradually change.
Subsequently, shown in Figure 19 (c), carve TiO by doing
2 Layer 1406e carries out moulding, thereby makes its thickness reduce gradually according to the slope of resist pattern 1401.
At last, shown in Figure 19 (d), at TiO
2Layer 1406e goes up and forms SiO successively with following order
2Layer 1406f, TiO
2Layer 1406g, SiO
2Layer 1406h and TiO
2Layer 1406i, thus solid imaging element finished.
Utilize this method can further change pass-band performance.
[15] the 14 execution modes
The following describes the 14 execution mode of the present invention.The solid imaging element of the 14 execution mode has the structure substantially the same with the solid imaging element of above-mentioned execution mode, and difference is that it comprises the absorber element that can absorb by the light of colour filter reflection.
Figure 20 shows that the manufacture method of the colour filter of the 14 execution mode.The step of Figure 20 (a) shown in Figure 20 (c) is identical with above-mentioned execution mode.
Shown in Figure 20 (d), the colour filter of the 14 execution mode is at TiO
2Have on the layer 1506i and be used for absorber element 1507b, 1507r and 1507g of all kinds.For example, absorber element 1507b, 1507r and 1507g can realize with the colour filter that contains pigment or dyestuff.
As mentioned above, only see through the light of specific wavelength and reflect the long light of other filter by the film formed colour filter of dielectric multilayer.As the repeatedly result of reflection on the solid imaging element surface, the light of this reflection can enter required light receiving element but not in other.Owing to can suppress noise, so can address this is that by absorber element is provided as the 14 execution mode by the reverberation generation.
[16] variant embodiment
Though based on above-mentioned execution mode the present invention has been described, the present invention is not limited to these execution modes, and comprises following distortion.
(1) in the above-described embodiment, outermost layer always is by high-index material (TiO in the colour filter
2) form.Yet the present invention is not limited to this layout, and outermost layer can be formed by low-index material.
The manufacture method of the colour filter that to be outermost layer formed by low-index material shown in Figure 21.Beginning shown in Figure 21 (a), forms TiO on insulating barrier 1604
2 Layer 1606a, SiO
2Layer 1606b, TiO
2Layer 1606c and SiO
2Layer 1606d.
Then, shown in Figure 21 (b) and 21 (c), by the SiO of etching adjusting as wall
2The thickness of layer 1606d.At last, shown in Figure 21 (d), at SiO
2Layer 1606d and TiO
2Form TiO on the Green Zone of layer 1606c
2Layer 1606e, SiO
2Layer 1606f, TiO
2Layer 1606g and SiO
2Layer 1606h.
Shown in Figure 22 is the transmissison characteristic figure of the colour filter of variant embodiment (1).The maximum transmission rate of relatively representing each blue light and ruddiness of Figure 22 and Figure 10 brings up to roughly 100%, and the maximum transmission rate of green glow also improves towards 100%.
Have this structure, adopt the situation of high-index material to compare with outermost layer in the colour filter, outermost layer almost seldom reflects incident light.Therefore, can show image more efficiently.Notice that the wall of being made by low-index material can provide better spectral sensitivity than the wall that high-index material is made.
(2) foregoing description of execution mode is not mentioned protective layer especially, but can perhaps form diaphragm between the multilayer dielectric layer that forms colour filter at colour filter towards on the surface of insulating barrier or on lenticular surface.Form reliability and the moisture resistance that diaphragm (for example, silicon nitride layer) can improve solid imaging element in this position.Shown in Figure 23 is the sectional view of the colour filter of this variant embodiment.As shown in figure 23, on insulating barrier 1704, form protective layer 1705 and colour filter 1706 successively.Here, protective layer 1705 is formed by silicon nitride.
Shown in Figure 24 is the transmissison characteristic figure of the colour filter of this variant embodiment.As shown in figure 24, increase protective layer 1705 and do not make the obvious variation of transmissison characteristic.
This mode increases reliability and the moisture resistance that protective layer can improve solid imaging element.
(3) in the foregoing description of execution mode, colour filter is identical with the cross section of wall in the cross section of lenticule side.Yet the present invention is not limited to this structure, and comprises following variant embodiment.
Shown in Figure 25 is the colour filter of variant embodiment.As shown in figure 25, the colour filter 1806 of this variant embodiment has the TiO that replaces on insulating barrier 1804
2Layer and SiO
2The structure of layer.In addition, on lenticular surface, form the SiO that thickness can be regulated according to the uneven surface of colour filter 1806 at colour filter 1806
2Layer 1806g, and SiO
2Layer 1806g is smooth towards lenticular surface.
Shown in Figure 26 is the transmissison characteristic figure of colour filter 1806.As shown in figure 26, though have SiO
2Layer 1806g, but colour filter 1806 has fabulous transmissison characteristic.
Have this structure, owing to can easily form lenticule, so can improve productive rate and can reduce manufacturing cost.In addition, do not need to use lenticule for each color with different focal.
(4) in the foregoing description of execution mode, colour filter always is formed on the insulating barrier.Yet the present invention is not limited to this layout, and comprises following variant embodiment.
Can form colour filter makes it contact with light receiving element.Shown in Figure 27 is the structure of the solid imaging element of this variant embodiment.
As shown in figure 27, the solid imaging element of this variant embodiment comprises N-N-type semiconductor N substrate 1901, P-type semiconductor layer 1902, light receiving element 1903, colour filter 1906, insulating barrier 1904, photomask 1905 and lenticule 1907.Shown in Figure 28 is the transmissison characteristic figure of colour filter 1906.Figure 28 represents that this deformed configurations does not make the transmissison characteristic variation of colour filter.
Have this structure, colour filter is feasible to be contacted with light receiving element owing to form, and therefore can prevent more reliably because the colour mixture that skew ray causes.
Here, from semi-conductive surface to colour filter the distance of high refractive index layer should be at least 1nm, but be not more than the light wavelength that colour filter sees through.Between the high refractive index layer of semiconductor and colour filter, can be provided as the low-refraction or the resilient coating of a colour filter part.For example, when high refractive index layer be TiO
2Layer and low-index layer are SiO
2During layer, from TiO
2Layer preferably falls into above-mentioned scope to the distance of light receiving element (semi-conductive surface).In other words, the SiO that preferably contacts with light receiving element
2But the optical thickness of layer is at least 1nm is not more than the light wavelength that colour filter sees through.
(5) according to the foregoing description of execution mode, has TiO alternately
2Layer and SiO
2In the colour filter of layer, can obtain TiO
2Layer and SiO
2One of any colour filter in the layer as wall.
Yet from the viewpoint of transmissivity, preferably wall is SiO
2Layer.Shown in Figure 29 for wall be TiO
2The transmissison characteristic figure of the colour filter of layer.As shown in figure 29, when wall be TiO
2During layer, blue, green and red maximum transmission rate neither one reaches 90%.
On the other hand, when wall be SiO
2When layer, as can be seen from Figure 10 blue, green and red each maximum transmission rate is 95% or higher.Therefore, has SiO alternately
2Layer and TiO
2In the colour filter of layer, wall is preferably SiO
2Layer.
Here, but the optical thickness of wall is preferably 1nm at least the light wavelength that is not more than colour filter and is seen through.Optical thickness in this scope promptly can reduce the reflection of wall and can make wall be used as silicon substrate and TiO
2Resilient coating between the layer.
(6) arrange with Bayer pattern in the red, green and blue district that represents colour filter in the foregoing description of execution mode simply.The following describes the preferable layout in the red, green and blue district of colour filter.
Shown in Figure 30 is the layout in red, green and blue district of the colour filter of this variant embodiment, and it shows the minimum unit (4 pixels) of Bayer pattern.What all pixels repeated arranges with least unit.As shown in figure 30, two detection blue lights and remaining two pixel in four pixels of formation Bayer pattern least unit detect ruddiness and green glow respectively.
Because having for blue light at half place of maximum, its transmissison characteristic, colour filter be compared to the relative littler full duration of ruddiness with green glow.Yet by adopting above-mentioned layout, being used to detect the passband of blue light can be wideer and can improve the photosensitivity of solid imaging element.
(7) according to the foregoing description of the tenth execution mode, at TiO
2Form groove in the red sector of layer, and be filled with SiO
2Yet the present invention is not limited to this layout, and comprises following variant embodiment.For example, can be at TiO
2Being provided with depression in the layer replaces groove and is filled with SiO
2In this case, TiO
2Refractive index that should the zone in the layer can be limited by the expression formula shown in the tenth execution mode.In addition, can groove be set the concentrated area.
Commercial Application
Solid imaging element of the present invention and manufacture method thereof and use its camera to can be used as the realization tool The utilization that smaller szie and more high performance color solid-state image device are arranged.
Claims (32)
1, a kind of solid imaging element comprises:
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally;
Color-filter unit is used for the incident light to the selected wavelength of described a plurality of light receiving unit transmissions; And
Lightproof unit is used to block incident light, and described lightproof unit has a plurality of holes, and described each hole is relative with corresponding light receiving unit, wherein
On a travel path of incident light from described lightproof unit to described a plurality of lightproof unit, described color-filter unit is arranged between described lightproof unit and the described a plurality of light receiving unit.
2, a kind of solid imaging element according to claim 1 is characterized in that, also comprises:
Light focusing unit is used for incident light is accumulated in corresponding light receiving element in the described a plurality of holes that are arranged at described lightproof unit each.
3, solid imaging element according to claim 2 is characterized in that, described color-filter unit is made up of inorganic material.
4, solid imaging element according to claim 2 is characterized in that, described color-filter unit has multi-layer film structure.
5, solid imaging element according to claim 2 is characterized in that, described color-filter unit is made up of photonic crystal.
6, a kind of solid imaging element comprises:
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally; And
Color-filter unit is used for the incident light to the selected wavelength of described a plurality of light receiving unit transmissions;
Wherein said color-filter unit is made up of photonic crystal.
7, a kind of camera that disposes solid imaging element comprises:
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally;
Color-filter unit is used for the incident light to the selected wavelength of described a plurality of light receiving unit transmissions; And
Lightproof unit is used to block incident light, and described lightproof unit has a plurality of holes, and described each hole is relative with corresponding light receiving unit, wherein
On a travel path of incident light from described lightproof unit to described a plurality of lightproof unit, described color-filter unit is arranged between described lightproof unit and the described a plurality of light receiving unit.
8, a kind of camera that disposes solid imaging element comprises:
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally; And
Color-filter unit is used for the incident light to the selected wavelength of described a plurality of light receiving unit transmissions;
Wherein said color-filter unit is made up of photonic crystal.
9, a kind of comprise can transmission the solid imaging element of color-filter unit of incident light of selected wavelength X level, it is characterized in that,
Described color-filter unit is a dielectric multilayer film, and described film comprises two λ/4 multilayer films and be clipped in insulating barrier between described λ/4 multilayer films that described insulating barrier has the thickness except that λ/4.
10, solid imaging element according to claim 9 is characterized in that,
Described dielectric multilayer film comprises:
Have the insulating barrier of optical thickness except that λ/4,
Described two λ/4 multilayer films comprise respectively:
First dielectric layer, optical thickness be λ/4 and made by the material that has a different refractivity with described insulating layer material,
Second dielectric layer, optical thickness are λ/4 and make by having identical refractive index materials with described insulating layer material;
Described first dielectric layer is formed on the first type surface of described insulating barrier,
Described second dielectric layer is formed in described first dielectric layer not on the first type surface of described insulating barrier.
11, according to one of the wherein any described solid imaging element of claim 9 and 10, it is characterized in that,
The optical thickness of described insulating barrier is set so that described color-filter unit sees through the light of selected wavelength X level.
12, solid imaging element according to claim 9 is characterized in that,
In a part corresponding to the described dielectric multilayer film of light receiving unit, described insulating barrier has one or more through holes or groove, described one or more through hole or groove are along the material identical materials that runs through and be filled with and form described first dielectric layer perpendicular to the direction of described insulating barrier first type surface
Described color-filter unit sees through according to the light when the definite wavelength of the area of one or more through holes when plane graph is observed described insulating barrier or groove and the ratio of the area of insulating barrier except that described one or more through holes or groove.
13, solid imaging element according to claim 9 is characterized in that, also comprises
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally;
Wherein, described insulating barrier has intilted side corresponding to the each several part of light receiving unit.
14, solid imaging element according to claim 9 is characterized in that, also comprises
A plurality of light receiving units, it is arranged on the Semiconductor substrate two-dimensionally;
The subregion that sees through the light that incides the corresponding light receiving element on the described dielectric film has a plurality of parts, and each several part has different thickness.
15, solid imaging element according to claim 9 is characterized in that,
The absorber element that is used to absorb by the light of described dielectric multilayer film reflection is arranged on the catoptrical side of described dielectric multilayer film.
16, solid imaging element according to claim 16 is characterized in that,
Described absorber element is the colour filter that contains pigment or dyestuff.
17, a kind of camera that disposes the described solid imaging element of claim 9 is characterized in that, described solid imaging element comprises the color-filter unit of being formed and seen through the incident light of selected wavelength X level by multilayer dielectric film.
18, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, and described color-filter unit is to be formed by following step:
First forms step, forms first dielectric multilayer film on Semiconductor substrate, and described first dielectric multilayer film is made of a plurality of λ/4 bloomings;
Second forms step, forms first insulating barrier on described this first dielectric multilayer film;
First removes step, removes the part of described first insulating barrier except that the first area;
The 3rd forms step, forms second insulating barrier on the first area of described first dielectric multilayer film and described first dielectric film;
Second removes step, removes the second area of described second insulating barrier, and described second area is positioned on described first dielectric multilayer film; And
The 4th forms step, forms second dielectric multilayer film on described second insulating barrier and described first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
19, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, and described color-filter unit is to be formed by following step:
First forms step, forms first dielectric multilayer film on Semiconductor substrate, and described first dielectric multilayer film is made of a plurality of λ/4 bloomings;
Second forms step, utilizes stripping means to form first insulating barrier on the first area of described first dielectric multilayer film;
The 3rd forms step, forms second insulating barrier by utilizing stripping means on the second area of described first dielectric multilayer film, and described second area is different from described first area; And
The 4th forms step, forms second dielectric multilayer film on described first insulating barrier, second insulating barrier and first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
20, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, and described color-filter unit is to be formed by following step:
First forms step, forms first dielectric multilayer film on Semiconductor substrate, and described first dielectric multilayer film is made of a plurality of λ/4 bloomings;
Second forms step, forms first insulating barrier on described first dielectric multilayer film;
First removes step, removes the part of described first insulating barrier except that the first area;
The 3rd forms step, utilizes on described first insulating barrier in the second area of stripping means in the first area and do not form in described first dielectric multilayer film on the zone of described first insulating barrier to form second insulating barrier; And
The 4th forms step, forms second dielectric multilayer film on described first insulating barrier and described second insulating barrier, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
21, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, and described color-filter unit is to be formed by following step:
First forms step, forms first dielectric multilayer film on Semiconductor substrate, and described first dielectric multilayer film is made of a plurality of λ/4 bloomings;
Second forms step, forms first insulating barrier on described first dielectric multilayer film;
First removes step, removes the part of described first insulating barrier except that the first area;
The 3rd forms step, forms second insulating barrier on the first area of described first dielectric multilayer film and described first dielectric film, and described second insulating barrier is made by the material different with described first insulating barrier;
Second removes step, removes described second insulating barrier part the part in the second area on first insulating barrier; And
The 4th forms step, forms second dielectric multilayer film on described first insulating barrier, described second insulating barrier and described first dielectric multilayer film, and described second dielectric multilayer film is made of a plurality of λ/4 bloomings.
22, a kind of manufacture method of solid imaging element, described solid imaging element is included in a plurality of light receiving units of two-dimensional arrangements in the Semiconductor substrate, and the color-filter unit that sees through selected wavelength X level incident light, described color-filter unit comprises respectively two dielectric multilayer films of being made up of a plurality of λ/4 bloomings and is clipped in insulating barrier between described two dielectric multilayer films that described manufacture method comprises:
First forms step, and the central authorities of each form resist in facing to a plurality of insulating barrier parts of described a plurality of light receiving units; And
Forming step is by the described insulating barrier of etching forming, to provide each insulating barrier part of at least one inclined side.
23, manufacture method according to claim 22 is characterized in that,
In described formation step, form described resist to have inclined side.
24, manufacture method according to claim 23 is characterized in that,
In described formation step, form described resist to have inclined side by changing exposure.
25, solid imaging element according to claim 9 also comprises:
A plurality of light receiving units, it is arranged in Semiconductor substrate two-dimensionally;
Color-filter unit sees through the light of different wave length according to the light receiving unit of correspondence, wherein
According to the light wavelength that will be transmitted on the described relative light receiving element, below three can be different: (i) do not have or have a described insulating barrier; (ii) one of the thickness of described insulating barrier and material, or the (iii) thickness of described insulating barrier and the combination of material.
26, solid imaging element according to claim 9 also comprises:
A plurality of light receiving units, it is arranged in Semiconductor substrate two-dimensionally; And
Color-filter unit sees through the light of different wave length according to the light receiving unit of correspondence, wherein
Two λ/4 multilayer films are constructed symmetrically about described insulating barrier.
27, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, it is characterized in that,
Described color-filter unit is the dielectric multilayer film that comprises two types of dielectric layers, and all types of dielectric layers have different refractive indexes,
In described dielectric multilayer film, has one less in two refractive indexes from described light receiving unit dielectric layer farthest.
28, a kind of manufacture method that comprises the solid imaging element of color-filter unit, wherein said color-filter unit sees through the light of selected wavelength X level, it is characterized in that,
On one of first type surface of dielectric multilayer film or constitute described dielectric multilayer film any givenly diaphragm is set between to dielectric layer.
29, solid imaging element according to claim 28 is characterized in that,
Described diaphragm is made up of silicon nitride.
30, solid imaging element according to claim 9 is characterized in that, also comprises:
A plurality of light receiving elements, it is arranged on Semiconductor substrate two-dimensionally;
A plurality of light focusing unit are respectively applied for the gathering incident light;
Color-filter unit with a plurality of parts, described each several part is according to the light of corresponding light receiving unit through specific wavelength, wherein
Color-filter unit is not smooth towards the first type surface of described a plurality of light receiving units.
31, a kind of solid imaging element comprises:
A plurality of light receiving units, it is arranged in Semiconductor substrate two-dimensionally; And
Color-filter unit, seeing through wavelength is the incident light of λ level, wherein
Described color-filter unit comprises the dielectric multilayer film of two class dielectric layers, and all types of have different refractive indexes,
Following (i) a plurality of light receiving units and (ii) the nearest high refractive index layer of the described a plurality of light receiving units of the high refractive index layer middle distance in described dielectric multilayer film fall into 1nm in the scope of λ to the distance between described a plurality of light receiving units.
32, the solid imaging element of the unit picture element of a kind of colour filter that comprises the light that sees through selected wavelength X level and two-dimensional arrangements, described constituent parts pixel comprises:
Light receiving unit is used to detect light intensity; And
Color-filter unit is made up of the multilayer dielectric film that sees through one of ruddiness, green glow and blue light, wherein
Described a plurality of unit picture element is arranged with Bayer pattern according to the color of the light that sees through the color-filter unit part, and feasible each square area of four adjacent cells pixels that comprises has two unit picture elements that comprise the colour filter part that sees through blue light respectively.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP285254/2003 | 2003-08-01 | ||
| JP2003285254 | 2003-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1830087A true CN1830087A (en) | 2006-09-06 |
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ID=36947571
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800216782A Pending CN1830087A (en) | 2003-08-01 | 2004-08-02 | Solid-state imaging device, production method for solid-state imaging device and camera using this |
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| Country | Link |
|---|---|
| JP (1) | JPWO2005013369A1 (en) |
| CN (1) | CN1830087A (en) |
| TW (1) | TWI265627B (en) |
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| CN102215349A (en) * | 2010-04-12 | 2011-10-12 | 佳能株式会社 | Solid-state imaging device |
| CN102656492A (en) * | 2010-01-21 | 2012-09-05 | 株式会社东芝 | Substrate with interference filter layer and display device using same |
| CN103503143A (en) * | 2012-05-02 | 2014-01-08 | 松下电器产业株式会社 | Solid-state imaging device |
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| JP6789792B2 (en) | 2016-12-13 | 2020-11-25 | ソニーセミコンダクタソリューションズ株式会社 | Image sensor, electronic equipment |
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-
2004
- 2004-08-02 TW TW093123062A patent/TWI265627B/en not_active IP Right Cessation
- 2004-08-02 CN CNA2004800216782A patent/CN1830087A/en active Pending
- 2004-08-02 JP JP2005512608A patent/JPWO2005013369A1/en not_active Withdrawn
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| CN101728407B (en) * | 2008-10-31 | 2014-11-12 | 索尼株式会社 | Solid-state imaging device, method for manufacturing the same, and electronic apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2005013369A1 (en) | 2006-09-28 |
| TWI265627B (en) | 2006-11-01 |
| TW200529418A (en) | 2005-09-01 |
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