CN1825607A - Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device - Google Patents
Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device Download PDFInfo
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- CN1825607A CN1825607A CN 200610001435 CN200610001435A CN1825607A CN 1825607 A CN1825607 A CN 1825607A CN 200610001435 CN200610001435 CN 200610001435 CN 200610001435 A CN200610001435 A CN 200610001435A CN 1825607 A CN1825607 A CN 1825607A
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- colour filter
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Abstract
A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.
Description
Technical field
The present invention relates to a kind of solid imaging element and manufacture method thereof in conjunction with colour filter on the chip, and the camera that disposes solid imaging element.
Background technology
Normally, having the solid imaging element that is used for light is converted to the optical-electrical converter of electric charge such as CCD solid imaging element, MOS solid imaging element etc. has been applied to such as different image capture devices such as video camera, digital camera and facsimile machines.
The well known examples of solid imaging element is the color solid-state image device with colour filter.Traditional color solid-state image device comprises the complementary color colour filter of red (R), blue (B) and green (G) primary color filter sheet or green grass or young crops (C), purple (M), Huang (Y) and green (G), on the optical receiving surface of the light receiving unit of the stacking two-dimensional arrangements in solid-state imaging element of colour filter.Colour filter has predetermined pattern makes each chrominance section corresponding to a light receiving unit.Stacking colour filter on the optical receiving surface of light receiving unit is commonly referred to " colour filter on the sheet (on-chip filter) ".
The light that enters the color solid-state image device is not necessarily perpendicular to the optical receiving surface of color solid-state image device.If the light that optical receiving surface is gone in oblique fire athwart colour filter part with oblique fire to light receiving element corresponding to adjacent colour filter part, mixed color phenomenon can take place.
The known configurations that overcomes this colour mixture problem is a color solid-state image device 91 shown in Figure 19, and wherein black light-blocking film 96a is arranged at the edge (pixel edge) (referring to Japan early stage publication publication number No.2-084766) of the light-receiving pixel region that wherein is provided with photodiode (PDs) to 96c.Figure 19 shows that the schematic sectional view of traditional color solid-state image device structure.Make color solid-state image device shown in Figure 19 by manufacturing step as described below.
At first, but the pixel edge on the imaging surface of solid imaging element 91 coating dyeing resin and composition make it have predetermined thickness.By the resin behind the black dyes dyeing composition to form the first photomask 96a.Then, with the stainability resin be coated to the predetermined zone that limits by the first photomask 96a one of them, composition and dyeing are to form first colour filter part (R) 93 then.
Then, on the optical receiving surface that forms the first photomask 96a and colour filter part (R) 93, form transparent anti-dyeing film 97.Thereafter, on transparent anti-dyeing film 97, but with preset thickness coating dyeing resin and composition, and by dye resin behind this composition of black dyes, thereby form the second photomask 96b at pixel edge.Then, but with dyeing resin be coated to the predetermined zone that limits by the second photomask 96b one of them, composition and dyeing are to form second colour filter part (G) 94 then.
Then, in the same way, form transparent anti-dyeing film 98, the 3rd photomask 96c, the 3rd colour filter part (B) 95.At last, form transparent anti-dyeing film 99 as protective layer.
For example, by forming black photomask 96a at pixel edge to 96c, by photomask 96a to the oblique fire of 96c partition go into and run through colour filter partly the light of (B) 95 make it can not arrive adjacent light-receiving pixel region (PD part) 92.By this structure, can prevent because the mixed color phenomenon that oblique light produces.
Solid imaging element has planarization layer, color filter layer and light collecting lens layer above each light receiving part that forms on the substrate.At present, the lens pattern by hot-fluid technology or employing dry etching technology shifts the formation light collecting lens.
Form technology according to the disclosed lens of Japan Patent No.2604890, heat at the upper surface whole coating photoresist of substrate and with first temperature.Optionally expose this photoresist to form pattern.Expose (exposure) by whole surface and make the pattern decolouring.Resist to composition and decolouring adds thermal deformation with second temperature and to be higher than the 3rd temperature hot curing of second temperature.The reflection coefficient of this photoresist is about 1.6, and the reflection coefficient of air is 1 here.When the situation of using when forming light collecting lens and not forming light collecting lens by this photoresist relatively, the light quantity raising of in each pixel, collecting, and light sensitivity approximately doubles.Yet in this way, photoresist not only is subjected to the restriction of optical characteristics but also is subjected to restriction such as coating characteristic, composition characteristic, heatflow characteristics, various other characteristics such as heat-resisting.Therefore, be not easy to select material.In other words, the precision of technology depends on the selection of photoresist.
Form technology according to the disclosed lens of Japan Patent No.3158466.The polyimide material of coating non-photosensitivity is heating and curing then.First photoresist integral body be coated in non-photosensitive materials layer and optionally the expose feasible first photoresist layer part removed electrode pad part on thereafter.Second photoresist integrally is coated in the structure of formation and optionally removes zone corresponding to light receiving part.Add the structure of thermosetting to form first light collecting lens plate thereafter.Then, this first light collecting lens plate of etching shifts gets back to first photoresist layer, thereby forms the second light collecting lens plate.Second light collecting lens plate transferred to non-photosensitive materials layer to form light collecting lens thereafter.The material of this light collecting lens for composition characteristic or heatflow characteristics without limits and therefore and Japan Patent No.2604890 relatively can enjoy the material range of choice of broad.
Need a large amount of steps in the disclosed structure of the early stage patent disclosure No.2084766 of Japan, that is, and the formation of (1) black light-blocking film; The formation of (2) first colour filters; (3) formation of anti-dye layer; (4) formation of black light-blocking film; The formation of (5) second colour filters; (6) formation of anti-dyeing film; (7) formation of black light-blocking film; The formation of (8) the 3rd colour filters; And the formation of (9) protective layer.In addition, because the size of solid-state pixel image device reduces or the raising of pixel quantity makes each Pixel Dimensions reduce, form the black light-blocking film pattern by photoetching and become difficult more.
In the disclosed technology of Japan Patent No.3158466, non-photosensitive materials must be passed through solvent dilution before being coated on the substrate.Therefore, material is stable very poor.In addition, because material passes through solvent dilution, the electron density of non-photosensitive materials reduces, and therefore, the refractive index of material descends.
Summary of the invention
Consider above-mentioned problem, the object of the present invention is to provide the solid imaging element that has the small-sized pixel that wherein can avoid the mixed color phenomenon that produces by skew ray by simple manufacturing process.Another object of the present invention is to form high refractor by stable material settling out ground in the formation method of solid imaging element light collecting lens.
According to a first aspect of the invention, solid imaging element comprises: Semiconductor substrate; On Semiconductor substrate with a plurality of light receiving elements of matrix structure; Be arranged at a plurality of colour filter parts on the light receiving element, these a plurality of colour filter parts are separated each other by the gap; And be arranged at optical collector on the colour filter part, be used to collect the light of light receiving element top, air inclusion in its intermediate gap.
In solid imaging element according to a first aspect of the invention, the component of going into the light of colour filter in the pixel owing to the difference oblique fire of refractive index between colour filter and the air reflects by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component that the light of colour filter in the pixel is gone in oblique fire reflects on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray enters the colour mixture that neighbor produces.In solid imaging element according to a first aspect of the invention, there is no need to form the black light-blocking film of the required narrow pattern of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
According to a second aspect of the invention, this solid imaging element comprises: Semiconductor substrate; On Semiconductor substrate with a plurality of light receiving elements of matrix structure; Be arranged at a plurality of colour filter parts on the light receiving element, these a plurality of colour filter parts separate each other by the gap; And be arranged at optical collector on the colour filter part, and be used to collect the light on the light receiving element, fill in its intermediate gap and have the colour filter of being lower than part refractive index materials.
In solid imaging element according to a second aspect of the invention, the component of going into the light of colour filter in the pixel owing to the difference oblique fire of refractive index between the material of colour filter and this low-refraction is reflected by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component of the light of colour filter in the pixel is gone in the refraction oblique fire on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray is injected the colour mixture that neighbor produces.In solid imaging element according to a second aspect of the invention, there is no need to form the black light-blocking film of the required narrow pattern width of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
According to a third aspect of the invention we, this solid imaging element comprises: Semiconductor substrate; On Semiconductor substrate with a plurality of light receiving elements of matrix structure; Be arranged at a plurality of colour filter parts on the light receiving element, this colour filter is partly independently of one another by the gap; And be arranged at optical collector on the colour filter part, and be used to collect the light on the light receiving element, fill the material that comprises organic pigment in its intermediate gap.
In solid imaging element according to a third aspect of the invention we, the light component of going into colour filter in the pixel owing to the difference oblique fire of refractive index between colour filter and the organic pigment material reflects by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component that the light of colour filter in the pixel is gone in oblique fire reflects on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray enters the colour mixture that neighbor produces.In solid imaging element according to a third aspect of the invention we, there is no need to form the black light-blocking film of the required narrow pattern of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
According to of the present invention first in the solid imaging element of the third aspect, Semiconductor substrate is the part of chip; In the central area of chip, the lateral vertical of colour filter part is in the upper surface of Semiconductor substrate; And the exterior lateral area in the chip center zone, the side of colour filter part tilts to the direction vertical with the Semiconductor substrate upper surface.In this case, can proofread and correct by colour filter is catoptrical in the outer peripheral areas of chip and depart from.Therefore, can prevent the reduction of image outer peripheral areas light quantity.
According to of the present invention first in the solid imaging element of the third aspect, Semiconductor substrate is the part of chip; At the middle section of chip, above the edge between the light receiving element, there is the space; Exterior lateral area in the chip center zone, gap depart from the position above the edge between the light receiving element.In this case, can proofread and correct by colour filter is catoptrical in the outer peripheral areas of chip and depart from (displacement).Therefore, can prevent the reduction of image outer peripheral areas light quantity.
According to of the present invention first in the solid imaging element of the third aspect, each gap has conical in shape upwards.In this case, when light when adjacent lens is gone into colour filter by the top oblique fire of colour filter, the colour mixture between neighbor can not take place, and has improved the service efficiency of light.
According to of the present invention first in the solid imaging element of the third aspect, also have the Ranvier's membrane that is formed on below the colour filter, and the gap can be formed on this Ranvier's membrane.
According to of the present invention first in the solid imaging element of the third aspect, also have the planarization film that is formed on above the colour filter, and the gap can be formed on this planarization film.
Arbitrarily in one of them the camera, can avoid colour mixture to the solid imaging element of the third aspect being combined with according to the present invention first.Therefore, can realize the digital camera of high image quality with low cost.
According to of the present invention first in the solid imaging element of the third aspect, colour filter can be such as the colour filter of primary colors Bayer pattern (primary color Bayer pattern), the colour filter or the complementary color colour filter of primary colors candy strip.
According to a forth aspect of the invention, a kind of manufacture method that is included on the Semiconductor substrate with the solid imaging element of a plurality of light receiving elements of matrix structure comprises step: (a) form the filter material layer on light receiving element; (b) on the filter material layer, form photosensitive resin layer and also optionally expose photosensitive resin layer in photosensitive resin layer, to form groove pattern; (c) adopt photosensitive resin layer as mask etching filter material layer forming groove at the filter material layer, thereby form a plurality of colour filter parts; And (d) on a plurality of colour filters part, form optical collector.
When making solid imaging element according to the manufacture method of fourth aspect present invention, the component of going into the light of colour filter in the pixel owing to the difference oblique fire of refractive index between colour filter and the air reflects by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component that the light of colour filter in the pixel is gone in oblique fire reflects on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray enters the colour mixture that neighbor produces.There is no need to form the black light-blocking film of the required narrow pattern of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
, before step (a), further comprise according to the manufacture method of fourth aspect present invention: (e) forming light receiving element on the Semiconductor substrate and (f) on Semiconductor substrate and light receiving element, forming planarization film.This method further comprises between step (c) and step (d), (g) partly provides one deck organic material at a plurality of colour filters.At step (d), on this organic material layer, form optical collector.
According to a fifth aspect of the invention, a kind of manufacture method that is included on the Semiconductor substrate with the solid imaging element of a plurality of light receiving elements of matrix structure comprises step: (a) form the filter material film on light receiving element; (b) on the filter material film, form photosensitive resin layer and also optionally expose photosensitive resin layer in photosensitive resin layer, to form groove pattern; (c) adopt photosensitive resin layer as mask etching filter material film in the filter material film, forming groove, thereby form a plurality of colour filter parts; (d) in groove, form low-index layer with the refractive index that is lower than the colour filter part; And (e) on a plurality of colour filters part, form optical collector.
When making solid imaging element according to the manufacture method of fifth aspect present invention, the component of going into the light of colour filter in the pixel owing to the difference oblique fire of refractive index between colour filter and the low refractive material reflects by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component that the light of colour filter in the pixel is gone in oblique fire reflects on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray enters the colour mixture that neighbor produces.There is no need to form the black light-blocking film of the required narrow pattern width of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
According to a sixth aspect of the invention, a kind of be used to comprise a plurality ofly comprise step in the manufacture method with the solid imaging element of the light receiving element of matrix structure on the Semiconductor substrate: (a) on light receiving element, form the filter material film; (b) on the filter material film, form photosensitive resin layer and also optionally expose photosensitive resin layer in photosensitive resin layer, to form groove pattern; (c) adopt photosensitive resin layer as mask etching filter material film in the filter material film, forming groove, thereby form a plurality of colour filter parts; (d) in groove, deposit organic pigment; And (e) on a plurality of colour filters part, form optical collector.
When making solid imaging element according to the manufacture method of sixth aspect present invention, the component of going into the light of colour filter in the pixel owing to the difference oblique fire of refractive index between colour filter and the organic pigment material reflects by the colour filter wall, and has therefore improved the service efficiency of light.In addition, the component that the light of colour filter in the pixel is gone in oblique fire reflects on the colour filter wall, thereby has avoided light to enter the adjacent light receiving element.By this structure, can prevent because skew ray enters the colour mixture that neighbor produces.There is no need to form the black light-blocking film of the required narrow pattern width of conventional solid-state image device.Therefore, can reduce Pixel Dimensions.
In manufacture method according to sixth aspect present invention, at step (d), the organic pigment of deposition monochrome or the organic pigment of polychrome in groove.
The manufacture method of the 5th and the 6th aspect also further comprised before step (a) according to the present invention, (f) was forming light receiving element on the Semiconductor substrate and (g) was forming planarization layer on Semiconductor substrate and light receiving element.This method further comprises between step (d) and step (e), (h) partly provides one deck organic material at a plurality of colour filters.At step (e), at this layer formation optical collector.
According to seventh aspect present invention, be used to make solid imaging element and comprise step: a material layer (a) is set on the substrate with a plurality of light receiving elements formed thereon with optical collector; (b) has the resist layer of lens shape in this layer formation; And (c) shape of resist is transferred to this layer, thereby form optical collector by etching.
According to the manufacture method of seventh aspect present invention, this light collecting lens is formed by material layer.Therefore need not be glassy surface by solution with the material dilution of light collecting lens as conventional art.Therefore, improved the stability of light collecting lens material.In addition, can also prevent because the refractive index decline phenomenon that the electron density variation causes.
In the manufacture method according to seventh aspect present invention, layer refractive index is preferably 1.6 or higher.In this case, can improve the light quantity of in each pixel of solid imaging element, collecting effectively.Therefore, can improve the sensitivity of solid imaging element.
In the manufacture method according to seventh aspect present invention, the instantiation of high index of refraction layer material is the material that comprises carbodiimide-based, and another example is such as heat reactive resins such as polyimide resin, phenolic resins.
Description of drawings
Figure 1 shows that structural section figure according to the solid imaging element of execution mode 1;
Figure 2 shows that solid imaging element deformed configurations sectional view according to execution mode 1;
Figure 3 shows that solid imaging element deformed configurations sectional view according to execution mode 2;
Figure 4 shows that solid imaging element deformed configurations sectional view according to execution mode 3;
Figure 5 shows that solid imaging element deformed configurations sectional view according to execution mode 4;
Figure 6 shows that solid imaging element deformed configurations sectional view according to execution mode 5;
Figure 7 shows that structural section figure according to the solid imaging element of execution mode 6;
Fig. 8 A, 8B and 8C are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 7;
Fig. 9 A and 9B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 7;
Figure 10 A and 10B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 7;
Figure 11 A and 11B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 7;
Figure 12 A, 12B and 12C are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 8;
Figure 13 A and 13B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 9;
Figure 14 A and 14B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 9;
Figure 15 A, 15B and 15C are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 10;
Figure 16 A, 16B and 16C are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 10;
Figure 17 A and 17B are depicted as the sectional view according to the solid imaging element manufacturing step of execution mode 10;
Figure 18 shows that common structured flowchart in conjunction with the digital camera of solid imaging element of the present invention; And
Figure 19 shows that the schematic sectional view of traditional color solid-state image device structure.
Embodiment
(execution mode 1)
Below, the solid imaging element according to embodiment of the present invention 1 is described.Should be noted that here with the CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the MOS solid imaging element.
Figure 1 shows that sectional view according to the solid imaging element structure of execution mode 1.As shown in Figure 1, the solid imaging element of execution mode 1 comprise Semiconductor substrate 1, on the Semiconductor substrate 1 with a plurality of light receiving parts 2 of matrix structure, be arranged on the Semiconductor substrate 1 and the transmission electrode 3 in zone between light receiving part 2.
This transmission electrode 3 is arranged on the Semiconductor substrate 1 by inserting in the dielectric layer 4.Photomask 5 for being used to stop light to enter transmission electrode 3 above transmission electrode 3 and dielectric layer 4.Above light receiving part 2 and photomask 5, be reduced to transparent planarization film 6 less than predeterminated level for the step that is used for to form by light receiving part 2 and transmission electrode 3.This transparent planarization film 6 has high transmission rate.The possible embodiment of transparent planarization film 6 comprises boron phosphorus silicate glass (Boron-Phospho Silicate Glass is abbreviated as BPSG), SiO
2Deng inoranic membrane and the film of polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.
Be colour filter Ranvier's membrane 7 on the transparent planarization film 6. Colour filter part 8a, 8b and 8c are positioned on the colour filter Ranvier's membrane 7.Between colour filter part 8a, 8b and 8c, be gap 9.That is, colour filter part 8a, 8b are separated with 8c by gap 9.
On colour filter part 8a, 8b and 8c and gap 9, be the planarization film 10 that forms by acrylic resin.It on this planarization film 10 lenticule 11 that is used for incident light is collected light receiving part 2.This lenticule 11 is aimed at corresponding light receiving part 2 exactly.
For example, the skew ray that incides lenticule 11 passes lenticule 11 and planarization layer 10 passes colour filter part 8a then.Light a is entered the light receiving part 2 that is positioned at below the colour filter part 8a then by the sidewall of colour filter part 8a (interface between colour filter 8a and gap 9) reflection or repeatedly reflection.Therefore, improved the light service efficiency.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light a of colour filter part 8a reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
Figure 2 shows that sectional view according to the solid imaging element distressed structure of execution mode 1.Gap 9 can have the tapered triangular-section that makes progress shown in Figure 2.
(execution mode 2)
Below, the solid imaging element according to execution mode 2 is described.Should be noted that here with the CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the MOS solid imaging element.
Figure 3 shows that sectional view according to the solid imaging element distressed structure of execution mode 2.As shown in Figure 3, the solid imaging element of execution mode 2 comprise Semiconductor substrate 1, on the Semiconductor substrate 1 with a plurality of light receiving parts 2 of matrix structure, be arranged on the Semiconductor substrate 1 and the transmission electrode 3 in zone between light receiving part 2.
This transmission electrode 3 is arranged on the Semiconductor substrate 1 by inserting in the dielectric layer 4.Photomask 5 for being used to stop light to enter transmission electrode 3 above transmission electrode 3 and dielectric layer 4.It above light receiving part 2 and photomask 5 the transparent planarization film 6 that is used for to be reduced to by the step that light receiving part 2 and transmission electrode 3 produce less than predeterminated level.This transparent planarization film 6 has high transmission rate.The possible embodiment of transparent planarization film 6 comprises BPSG, SiO
2Deng inoranic membrane, and the film of polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.
Be colour filter Ranvier's membrane 7 on the transparent planarization film 6. Colour filter part 8a, 8b and 8c are positioned on the colour filter Ranvier's membrane 7.Between colour filter part 8a, 8b and 8c, be low-refraction spacer 12.The refractive index of this low-refraction spacer 12 is lower than the refractive index of colour filter.
On colour filter part 8a, 8b and 8c and low-refraction spacer 12, be the planarization film 10 that forms by acrylic resin.It on this planarization film 10 lenticule 11 that is used for incident light is collected light receiving part 2.This lenticule 11 is aimed at corresponding light receiving part 2 exactly.
For example, the skew ray that incides lenticule 11 passes lenticule 11 and planarization film 10 passes colour filter part 8a then.Light a is reflected by the sidewall of colour filter part 8a (interface between colour filter 8a and the low-refraction spacer 12) or repeatedly reflects and enters the light receiving part 2 that is positioned at colour filter part 8a below then.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light a of colour filter part 8a reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
(execution mode 3)
Below, the solid imaging element according to execution mode 3 is described.Should be noted that here with the CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the MOS solid imaging element.
Figure 4 shows that sectional view according to the solid imaging element distressed structure of execution mode 3.As shown in Figure 4, the solid imaging element of execution mode 3 comprise Semiconductor substrate 1, on the Semiconductor substrate 1 with a plurality of light receiving parts 2 of matrix structure, be arranged on the Semiconductor substrate 1 and the transmission electrode 3 in zone between light receiving part 2.
This transmission electrode 3 is arranged on the Semiconductor substrate 1 by inserting in the dielectric film 4.Photomask 5 for being used to stop light to enter transmission electrode 3 on transmission electrode 3 and dielectric film 4.On light receiving part 2 and photomask 5, be reduced to transparent planarization film 6 less than predeterminated level for the step that is used for to form by light receiving part 2 and transmission electrode 3.This transparent planarization film 6 has high transmission rate.The possible embodiment of transparent planarization film 6 comprises BPSG, SiO
2Deng inoranic membrane, and the film of polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.
Be colour filter Ranvier's membrane 7 on the transparent planarization film 6. Colour filter part 8a, 8b and 8c are positioned on the colour filter Ranvier's membrane 7.Between colour filter part 8a, 8b and 8c, be organic pigment spacer 13.This organic pigment spacer 13 is formed by the material that comprises organic pigment.This organic pigment spacer 13 has monochromatic or a plurality of colors.
On colour filter part 8a, 8b and 8c and organic pigment spacer 13, be the planarization film 10 that forms by acrylic resin.It on this planarization film 10 lenticule 11 that is used for incident light is collected light receiving part 2.This lenticule 11 is aimed at corresponding light receiving part 2 exactly.
For example, the skew ray a that incides lenticule 11 passes lenticule 11 and planarization film 10 passes colour filter part 8a then.Light a is reflected by the sidewall of colour filter part 8a (interface between colour filter 8a and the organic pigment spacer 13) or repeatedly reflects and enters the light receiving part 2 that is positioned at colour filter part 8a below then.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light a of colour filter part 8a reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
(execution mode 4)
Below, the solid imaging element according to execution mode 4 is described.Should be noted that here with the CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the MOS solid imaging element.
Figure 5 shows that sectional view according to the solid imaging element distressed structure of execution mode 4.As shown in Figure 5, the solid imaging element of execution mode 4 comprise Semiconductor substrate 1, on the Semiconductor substrate 1 with a plurality of light receiving parts 2 of matrix structure, be arranged on the Semiconductor substrate 1 and the transmission electrode 3 in zone between light receiving part 2.
This transmission electrode 3 is arranged on the Semiconductor substrate 1 by inserting in the dielectric film 4.Photomask 5 for being used to stop light to enter transmission electrode 3 on transmission electrode 3 and dielectric layer 4.On light receiving part 2 and photomask 5, be reduced to transparent planarization film 6 less than predeterminated level for the step that is used for to form by light receiving part 2 and transmission electrode 3.This transparent planarization film 6 has high transmission rate.The possible embodiment of transparent planarization film 6 comprises BPSG, SiO
2Deng inoranic membrane, and the film of polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.
Be colour filter Ranvier's membrane 7 on the transparent planarization film 6. Colour filter part 8a, 8b and 8c are positioned on the colour filter Ranvier's membrane 7.Between colour filter part 8a, 8b and 8c, be gap 9.In a chip, the incident angle of light that incides colour filter part 8a, 8b and 8c is along with the position that light arrives colour filter increases away from chip center gradually.Therefore, in the chip edge part away from chip center, the core of lenticule 11 and light receiving part 2 shifts to chip center with respect to colour filter.Therefore, in solid imaging element according to execution mode 4, colour filter part 8a, 8b, the angle of inclination of the sidewall of 8c is along with the colour filter part improves away from chip center.
On colour filter part 8a, 8b and 8c and gap 9, be the planarization film 10 that forms by acrylic resin.It on this planarization film 10 lenticule 11 that is used for incident light is collected light receiving part 2.This lenticule 11 is aimed at corresponding light receiving part 2 exactly.
In execution mode 4, can proofread and correct by the catoptrical side-play amount of colour filter in the chip edge zone.Therefore can prevent situation in the light quantity minimizing of place, image border.
(execution mode 5)
Below, the solid imaging element according to execution mode 5 is described.Should be noted that here with the CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the MOS solid imaging element.
Figure 6 shows that sectional view according to the solid imaging element distressed structure of execution mode 5.As shown in Figure 6, the solid imaging element of execution mode 5 comprise Semiconductor substrate 1, on the Semiconductor substrate 1 with a plurality of light receiving parts 2 of matrix structure, be arranged on the Semiconductor substrate 1 and the transmission electrode 3 in zone between light receiving part 2.
This transmission electrode 3 is arranged on the Semiconductor substrate 1 by inserting in the dielectric film 4.Photomask 5 for being used to stop light to enter transmission electrode 3 on transmission electrode 3 and dielectric film 4.On light receiving part 2 and photomask 5, be reduced to transparent planarization film 6 less than predeterminated level for the step that is used for to form by light receiving part 2 and transmission electrode 3.This transparent planarization film 6 has high transmission rate.The possible embodiment of transparent planarization film 6 comprises BPSG, SiO
2Deng inoranic membrane, and the film of polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.
Be colour filter Ranvier's membrane 7 on the transparent planarization film 6. Colour filter part 8a, 8b and 8c are positioned on the colour filter Ranvier's membrane 7.Between colour filter part 8a, 8b and 8c, be gap 9.In a chip, the incident angle of light that incides colour filter part 8a, 8b and 8c is along with the position that light arrives colour filter increases away from chip center gradually.Therefore, in the chip edge part away from chip center, shift to chip center with respect to colour filter at the center of lenticule 11 and light receiving part 2.According to this skew, in the solid imaging element according to execution mode 5, the center in each gap 9 is also moved to chip center with respect to the edge between the colour filter part and is made the side-play amount in gap become big away from chip center along with the position in gap 9.
In execution mode 5, can proofread and correct by the catoptrical side-play amount of colour filter in the chip edge zone.Therefore can prevent situation in the light quantity minimizing of place, image border.
(execution mode 6)
Below, the manufacture method according to the solid imaging element of embodiment of the present invention 6 is described.Fig. 7 is the sectional view of the structure of the solid imaging element in the expression embodiments of the present invention 6.
As shown in Figure 7, in the solid imaging element of present embodiment, not only between colour filter 8a～8c, and in planarization film 10 and colour filter Ranvier's membrane 7, also be formed with gap 9.In addition structure is identical with the structure described in the execution mode 1, and the Therefore, omited illustrates it.
In the structure of present embodiment, the scope that forms gap 9 becomes greatly, so can reflect more light.Thus, can more accurately light be incided light receiving part 2.Also have, shown in Figure 7 is the situation that forms the gap 9 in the structure shown in Figure 1 in planarization film 10 and colour filter Ranvier's membrane 7.But the gap 9 in Fig. 2～structure shown in Figure 6 also can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.Specifically, in the structure shown in Figure 2, the gap 9 with triangular-section can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.In the structure shown in Figure 3, low-refraction spacer 12 can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.In the structure shown in Figure 4, organic pigment spacer 13 can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.In the structure shown in Figure 5, the gap 9 of sidewall slope can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.In the structure shown in Figure 6, gap 9 also can be formed in planarization film 10 and the colour filter Ranvier's membrane 7.
(execution mode 7)
Below, the manufacture method according to the solid imaging element of embodiment of the present invention 7 is described.Should be noted that here the method that is used to make the CCD solid imaging element with explanation as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to make the method for MOS solid imaging element.
Fig. 8 A is depicted as sectional view according to the solid imaging element manufacturing step of execution mode 7 to Figure 11 B.The manufacture method that should be noted that execution mode 7 is the manufacture method that is used to make the solid imaging element of execution mode 1.
Solid imaging element manufacture method according to execution mode 7, shown in Fig. 8 A, the first step, on Semiconductor substrate 1, form a plurality of light receiving parts 2 with matrix structure, then, at the dielectric film 4 that forms transmission electrode 3 and big envelope transmission electrode 3 on the Semiconductor substrate 1 and on zone between the light receiving part 2.On transmission electrode 3 be formed for the photomask 5 that stop light enter transmission electrode 3 thereafter.Then, the step that is formed for being formed by light receiving part 2 and transmission electrode 3 on the structure that produces is reduced to the transparent planarization film 6 less than predeterminated level.This transparent planarization film 6 can be formed by the material with high transmission rate, for example, and such as BPSG, SiO
2Deng inorganic material, perhaps polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.For example, when using resin for transparent planarization film 6, this resin is coated on and makes its thickness with 0.5 to 5 μ m on the substrate, is heating and curing 2 to 5 minutes at 180 ℃ to 250 ℃ then.
Then, transparent resin is coated on the transparent planarization film 6 and is heating and curing at 180 ℃ to 250 ℃ that to have thickness with formation in 2 to 5 minutes be the colour filter Ranvier's membrane 7 of 0.05 μ m to 0.3 μ m, produce the structure shown in Fig. 8 A.The material of this colour filter Ranvier's membrane 7 be have high transmission rate and to colour filter part 8a, 8b formed thereon and 8c (referring to Fig. 8 B) have fabulous bonding force transparent resin and by this material can not produce develop remaining.
Then, coating minus pigment photoresistor on colour filter Ranvier's membrane 7.Provide 30 second 3cc to the photoresistance of 5cc to implement this coating for 1500rpm to the glue spreader of 3000rpm by main revolution.After having applied photoresistance, baking is 30 to 80 seconds before 80 to 100 ℃ are carried out photoresist layer.Adopt photo etched mask the structure selectivity ground that produces be exposed to ultraviolet light (I ray) thereafter.Adopt moisture alkaline-based developer (aqueous alkaline developer) this photoresist layer that develops then, dried by the fire 2 to 5 minutes the back under 180 ℃ to 250 ℃ then, thereby this photoresistance is heating and curing.Therefore, form the first colour filter part 8a.In the same way, form the second colour filter part 8b and the 3rd colour filter part 8c, produce the structure shown in Fig. 8 B.
Then, the coating positive photosensitive resin makes it have the thickness of 1.0 to 5.0 μ m on colour filter part 8a, 8b and 8c.Provide 30 second photoresist to implement this coating for 1500rpm to the glue spreader of 3000rpm by main revolution.After having applied photoresist, baking is 30 to 80 seconds before 80 to 100 ℃ are carried out photoresist layer.Adopt photo etched mask the structure selectivity ground that produces be exposed in ultraviolet light (I ray) thereafter.Adopt moisture alkaline development solution this photoresist layer that develops to have the pattern 14 of opening with the edge that is formed on colour filter part 8a, 8b and 8c then.Pass through CF thereafter,
4And O
2Deng mixed air on pattern 14, implement dry etching, shown in Fig. 8 C, make between colour filter part 8a, 8b and 8c to form gap 9.
, adopt such as methyl butyl ketone solution such as (methylbutylketones) from colour filter part 8a, 8b and 8c remove pattern 14, produce the structure shown in Fig. 9 A thereafter.
Then, on colour filter part 8a, 8b and 8c, form planarization film 10, and thickness is that the high refractive index film of 0.5 to 2 μ m is positioned on the planarization film 10.Under 180 ℃ to 250 ℃, this planarization film 10 was heating and curing 2 to 5 minutes, thus the microlens layer 11 of formation shown in Fig. 9 B.This high refractive index layer can be to comprise the layer of carbodiimide-based or the hot curing layer of polyimide resin, phenolic resins etc.
Then, provide 30 minute novolac resin to make it be coated in whole silicon wafer surface for 1500rpm to the glue spreader of 3000rpm by main revolution.Thereafter, the structure that produces being dried by the fire 30 to 80 seconds before 80 ℃ to 100 ℃, is the lens flaggy 15 of 0.5 μ m to 2 μ m thereby formation has thickness.Then, optionally be exposed in the ultraviolet light (i ray) by 16 pairs of lens flaggies 15 of the photo etched mask shown in Figure 10 A.
Shown in Figure 10 B, adopt moisture alkaline development solution to develop this photoresist layer then to form the pattern in the lens flaggy 15.
Then, to the structure that produces 135 ℃ to 200 ℃ bakings 2 to 5 minutes down, thereby shown in Figure 11 A, the surface forming of the surface tension lens flaggy 15 by utilizing novolac resin is the curved surface of convex lens.
By dry etching as Figure 11 B shown in the shape of lens flaggy 15 transferred to microlens layer 11 thereafter.For example, this is dry-etched under the basic the same condition of the etching speed of the etching speed of lens flaggy 15 and microlens layer 11 and adopts CF
4And O
2Mixed gas implement dry etching.In this dry etch process, the material that comprises carbon and fluorine is deposited on the side of microlens layer 11, and the lens gap of the feasible lenticule 11 that produces is less than the gap of lens flaggy 15.
In making according to the solid imaging element of the manufacture method of execution mode 6, for example, with reference to figure 1, the skew ray that incides lenticule 11 passes lenticule 11 and planarization layer 10 passes colour filter part 8a then.Light a is reflected by the sidewall of colour filter part 8a (interface between colour filter 8a and gap 9) or repeatedly reflects and enters the light receiving part 2 that is positioned at colour filter part 8a below then.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light a of colour filter part 8a reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
In addition, under the situation that does not increase cell size, can allow lenticular area realize maximization.
(execution mode 8)
Below, the manufacture method according to the solid imaging element of embodiment of the present invention 8 is described.Should be noted that here manufacture method with explanation CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the manufacture method of MOS solid imaging element.
Figure 12 A is depicted as sectional view according to the solid imaging element manufacturing step of execution mode 8 to 12C.The manufacture method that should be noted that execution mode 8 is the manufacture method that is used for the solid imaging element of execution mode 2.
According to the solid imaging element manufacture method of execution mode 8, at first carry out in execution mode 7 Fig. 8 A of explanation to Fig. 8 C.After having formed gap 9 between block diagram 8C colour filter part 8a, 8b and the 8c, the low-refraction spacer 12 of the 9 formation fluororesin in the gap produces the structure shown in Figure 12 A by rotation painting method and hot curing.
Then, acrylic resin is coated on colour filter part 8a, 8b and 8c and the low-refraction spacer 12 and is heating and curing to form the planarization film 10 shown in 12B.
Then, provide 30 minute novolac resin, polyimide resin or acrylic resin for 1500rpm to the glue spreader of 3000rpm by main revolution, and make it be coated in the whole silicon wafer surface.The structure that produce 80 ℃ to 100 ℃ before dried by the fire 30 to 80 second thereafter.Then, optionally be exposed in the ultraviolet light (I ray) by 16 pairs of resin beds of photo etched mask.After the exposure, adopt moisture alkaline development solution to develop this photoresist layer then 135 ℃ to 200 ℃ bakings 2 to 5 minutes.Therefore, form the lenticule 11 of curved surface with the convex lens shown in Figure 12 C by the surface tension of utilizing novolac resin, polyimide resin or acrylic resin.
For example, in the solid imaging element of making according to the manufacture method of execution mode 8, with reference to figure 3, the skew ray that incides lenticule 11 passes lenticule 11 and planarization film 10 passes colour filter part 8a then.Light a is reflected by the sidewall of colour filter part 8a (interface between colour filter 8a and low-refraction spacer 12) or repeatedly reflects and enters the light receiving part 2 that is positioned at colour filter part 8a below then.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light a of colour filter part 8a reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
In addition, under the situation that does not increase cell size, can allow lenticular area realize maximization.
Can form lenticule by execution mode 7 described dry etchings.
Form low-refraction spacer 12 although in execution mode 8, form 9 backs, gap, also can form the organic pigment spacer by gas deposition according to the present invention.
(execution mode 9)
Below, the manufacture method according to the solid imaging element of embodiment of the present invention 9 is described.Should be noted that here the manufacture method that is used for the CCD solid imaging element with explanation as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the manufacture method of MOS solid imaging element.
Figure 13 A is depicted as sectional view according to the solid imaging element manufacturing step of execution mode 9 to 14B.The manufacture method that should be noted that execution mode 9 is the manufacture method that is used for solid imaging element shown in Figure 2.
In the solid imaging element of making according to the manufacture method of execution mode 9, at first carry out the manufacturing step that has illustrated at Fig. 8 A.Produce structure as shown in FIG. 13A.
Then, coating minus pigment photoresistor on the structure of this generation.Provide 30 second 3 to 5cc photoresistance to implement this coating for 1500rpm to the glue spreader of 3000rpm by main revolution.After having applied photoresistance, baking is 30 to 80 seconds before 80 ℃ to 100 ℃ are carried out photoresist layer.Adopt photo etched mask the structure selectivity ground that produces be exposed to ultraviolet light (i ray) thereafter.Adopt moisture alkaline development solution this photoresist layer that develops then, apply the back baking at 180 ℃ to 250 ℃ then and be heating and curing in 2 to 5 minutes.Thereby form the first colour filter part 8a.In exposure technology, defocus the light that has focused on and make the colour filter part 8a that wins have the shape of back taper.
With with form the same condition of the first colour filter part 8a, form the second colour filter part 8b shown in Figure 14 A and the 3rd colour filter part 8c as shown in Figure 14B.
For example, in the solid imaging element of making according to the manufacture method of execution mode 9, the skew ray that incides lenticule 11 passes lenticule 11 and planarization film 10 passes colour filter part 8b then.Light is reflected by the sidewall of colour filter part 8b (interface between colour filter 8b and low-refraction spacer 12) or repeatedly reflects and enters the light receiving part 2 that is positioned at colour filter part 8b below then.Simultaneously, do not run into photomask 5 or other elements and can not enter adjacent light receiving part 2 by the component of the light of colour filter part 8b reflection.Therefore, skew ray can not enter light receiving part 2, and there is no fear of occurring the mixed color phenomenon that produced by skew ray.
In addition, under the situation that does not increase cell size, can allow lenticular area realize maximization.
(execution mode 10)
Below, the manufacture method according to the solid imaging element of embodiment of the present invention 10 is described.Should be noted that here manufacture method with explanation CCD solid imaging element as embodiment, but the invention is not restricted to this.For example, the present invention also can be applied to the manufacture method of MOS solid imaging element.
Figure 15 A is depicted as sectional view according to the solid imaging element manufacturing step of execution mode 10 to 17B.
Solid imaging element manufacture method according to execution mode 10, shown in Figure 15 A, the first step, on Semiconductor substrate 1, form a plurality of light receiving parts 2 with matrix structure, then, forming transmission electrode 3 on the Semiconductor substrate 1 and on zone between the light receiving part 2, insert between Semiconductor substrate 1 and the transmission electrode 3 and cover the dielectric film 4 of transmission electrode 3, cover the upper surface of dielectric film 4 and side and be used to the photomask 5 that stops light to enter transmission electrode 3, be used for to be reduced to by the step that light receiving part 2 and transmission electrode 3 produce transparent planarization film 6 less than predeterminated level.This transparent planarization film 6 can be formed by the material with high transmission rate, for example, and such as BPSG, SiO
2Deng inorganic material, perhaps polyimide resin, epoxy resin, acrylic resin, polyurethane resin, phenol resin, silicones etc.For example, when resin is used for transparent planarization film 6, this resin is coated on the substrate is heating and curing then, 180 ℃ to 250 ℃ heat treated of carrying out 2 to 5 minutes.Preferred this thick resin film is 0.5 to 5 μ m.
Then, this transparent resin is coated on the transparent planarization film 6, makes its thickness and be heating and curing 2 to 5 minutes to form colour filter Ranvier's membrane 7, produce the structure shown in Figure 15 A at 180 ℃ to 250 ℃ with 0.05 to 0.3 μ m.Preferably, the material of this colour filter Ranvier's membrane 7 be have high transmission rate and to the colour filter (forming later on) that forms on it referring to Figure 15 B have fabulous bonding force transparent resin and by this material can not produce develop remaining.
Then, coating minus pigment photoresistor on colour filter Ranvier's membrane 7.To be 1500rpm to the glue spreader of 3000rpm apply the speed of per second 3 to 5cc solution incessantly implemented this coating in 30 seconds by main revolution.After having applied photoresistance, baking is 30 to 80 seconds before 80 ℃ to 100 ℃ are carried out photoresist layer.After preceding baking step, adopt mask that the structure selectivity ground that produces is exposed to ultraviolet light (i ray).Adopt moisture alkaline development solution this photoresist layer that develops then, then 180 ℃ to the 250 ℃ back bakings that apply 2 to 5 minutes, thereby this photoresistance is heating and curing.Therefore, form the first colour filter part 8a.In the same way, on light receiving part 2, form the second colour filter part 8b and the 3rd colour filter part 8c, produce the structure shown in Figure 15 B.
Then, in order to reduce the step that forms between the first colour filter part 8a, the second colour filter part 8b and the 3rd colour filter part 8c, on colour filter part 8a, 8b, 8c, apply acrylic resin.To the structure of this formation 80 ℃ to 100 ℃ carry out 30 to 80 seconds preceding baking and thereafter 180 ℃ to the 250 ℃ back bakings of carrying out 2 to 5 minutes, thereby solidify this acrylic resin to form the transparent planarization film 21 shown in Figure 15 C.
Then, to be 0.5 μ m be placed on the whole silicon wafer to 2.0 μ m and the high index of refraction that comprises carbodiimide-based thickness.This high refractive index layer was carried out heat treated 2 to 5 minutes at 180 ℃ to 250 ℃, thereby solidify this layer to form the lens jacket 22 shown in Figure 16 A.Should notice that this high refractive index layer also can be substituted the layer that comprises carbodiimide-based by the hot curing layer of polyimide resin, phenolic resins etc.Preferably, the refractive index of high refractive index layer is 1.6 or higher.
Then, provide 30 minutes novolac resin that it is coated on the whole silicon wafer surface for 1500rpm to the glue spreader of 3000rpm, thereby form resist film by main revolution.Thereafter, 80 ℃ to the 100 ℃ preceding bakings of carrying out 30 to 80 seconds, to have thickness be the lens flaggy 23 of 0.5 μ m to 2.0 μ m thereby form to the structure that forms.
Then, this lens flaggy 23 optionally is exposed under the ultraviolet light (i ray) by the photo etched mask shown in Figure 16 B 24.
After step of exposure, adopt moisture alkaline development solution to develop this lens flaggy 23 removing this lens flaggy 23 unnecessary portions, thereby this lens flaggy 23 is divided into a plurality of parts shown in Figure 16 C.
Then, the structure that produces was toasted 2 to 5 minutes down at 135 ℃ to 200 ℃.By this baking process, shown in Figure 17 A, by utilizing the surface tension of novolac resin, the surface forming of lens flaggy 23 is the curved surface of convex lens.
Thereafter, by shown in Figure 17 B, the shape of lens flaggy 15 being transferred to lens jacket 22.This transfer of enforcement under the basic the same condition of the etching speed by being dry-etched in lens flaggy 15 and the etching speed of microlens layer 11.For example, by adopting CF
4And O
2Mixed gas implement dry etching.When using mixed gas, the material that comprises carbon and fluorine when carrying out etching is deposited on the side of lens board part 23, makes the lens gap (lens gap) of adjacent lens 22 less than the distance between the adjacent lens flaggy 23.
In execution mode 10, this lens jacket 22 is made of material layer.Therefore, there is no need as conventional art by solution being poured into the material that dilutes lens jacket 22 on the varnish.Therefore, can improve the stability of lens jacket 22 materials.In addition, can also avoid reducing the phenomenon of the refractive index decline that produces owing to lens jacket 22 electron densities.
(other execution modes)
The described solid imaging element of execution mode 1-6 can be used for digital camera.
Figure 18 shows that common structured flowchart in conjunction with the digital camera of solid imaging element of the present invention.As shown in figure 18, digital camera of the present invention comprise solid imaging element 30, comprise be used to focus on from the light of object with the optical system 31, the control section 32 that is used to control solid imaging element 30 operations that form image at the imaging surface of solid imaging element 30, be used for carry out image processing section 33, the display of handling 34 that is used for display image processing section 33 processing signals, the video memory 35 that is used for memory image processing section 33 processing signals from the various signals of solid imaging element 30 outputs.
In the digital camera of using solid imaging element of the present invention, can avoid colour mixture.Therefore, can realize higher picture quality with low cost.
Digital camera of the present invention can also be anyly only can take the still camera of still image, only can take the video camera of dynamic image and can take the video camera that still image can be taken dynamic image again.
Claims (19)
1, a kind of solid imaging element comprises:
Semiconductor substrate;
Be positioned on the Semiconductor substrate a plurality of light receiving elements with matrix structure;
Be arranged at a plurality of colour filter parts on the light receiving element, these a plurality of colour filter parts are separated each other by the gap; And
Be arranged at the optical collector of the light that is used to collect the light receiving element top on the colour filter part, wherein
Contain gas in the described gap.
2, a kind of solid imaging element comprises:
Semiconductor substrate;
Be positioned on the Semiconductor substrate a plurality of light receiving elements with matrix structure;
Be arranged at a plurality of colour filter parts on the light receiving element, these a plurality of colour filter parts are separated each other by the gap; And
Be arranged at the optical collector of the light that is used to collect the light receiving element top on the colour filter part,
Be filled with refractive index in the wherein said gap and be lower than colour filter part refractive index materials.
3, a kind of solid imaging element comprises:
Semiconductor substrate;
Be positioned on the Semiconductor substrate a plurality of light receiving elements with matrix structure;
Be arranged at a plurality of colour filter parts on the light receiving element, these a plurality of colour filter parts are separated each other by the gap; And
Be arranged at the optical collector of the light that is used to collect the light receiving element top on the colour filter part,
Fill the material that contains organic pigment in the wherein said gap.
4, according to any one of them the described solid imaging element of claim 1-3, it is characterized in that,
Semiconductor substrate is the part of chip;
In the central area of chip, the lateral vertical of colour filter part is in the upper surface of Semiconductor substrate; And
Exterior lateral area in the chip center zone, the side of colour filter part tilts from the direction perpendicular to the upper surface of Semiconductor substrate.
5, according to any one of them the described solid imaging element of claim 1-3, it is characterized in that,
Semiconductor substrate is the part of chip;
In the central area of chip, above the edge between the light receiving element, there is the gap; And
Exterior lateral area in the chip center zone, the position above the edge between the light receiving element is departed from described gap.
6, according to any one of them the described solid imaging element of claim 1-3, it is characterized in that described each gap has the shape that upwards reduces gradually.
7, according to any one of them the described solid imaging element of claim 1-3, it is characterized in that, below described colour filter, also be formed with Ranvier's membrane,
Wherein said gap also is formed in the described Ranvier's membrane.
8, according to any one of them the described solid imaging element of claim 1-3, it is characterized in that, on described colour filter, also be formed with planarization film,
Wherein said gap also is formed in the described planarization film.
9, dispose camera according to any described solid imaging element of claim among the claim 1-3.
10, be used to make comprise a plurality of on Semiconductor substrate the method with the solid imaging element of the light receiving element of matrix structure, comprise step:
(a) on light receiving element, form the filter material film;
(b) on the filter material film, form photosensitive resin layer and also optionally expose photosensitive resin layer in photosensitive resin layer, to form groove pattern;
(c) adopt photosensitive resin layer as mask etching filter material film in the filter material film, forming groove, thereby form a plurality of colour filter parts; And
(d) on a plurality of colour filter parts, form optical collector.
11, method according to claim 10 is characterized in that,
This method also comprises before in step (a): (e) form light receiving element on Semiconductor substrate, and (f) form planarization film on Semiconductor substrate and light receiving element;
This method also comprises between step (c) and step (d): (g) partly provide one deck organic material at a plurality of colour filters; And
In step (d), on described organic material layer, form optical collector.
12, be used to make comprise a plurality of on Semiconductor substrate the method with the solid imaging element of the light receiving element of matrix structure, comprise step:
(a) on light receiving element, form the filter material film;
(b) on the filter material film, form photosensitive resin layer and also optionally expose photosensitive resin layer in photosensitive resin layer, to form groove pattern;
(c) adopt photosensitive resin layer as mask etching filter material film in the filter material film, forming groove, thereby form a plurality of colour filter parts;
(d) in described groove, form the low-index layer that refractive index is lower than colour filter part refractive index; And
(e) on a plurality of colour filter parts, form optical collector.
13, be used to make comprise a plurality of on Semiconductor substrate the method with the solid imaging element of the light receiving element of matrix structure, comprise step:
(a) on light receiving element, form the filter material film;
(b) on the filter material film, form the photosensitive resin layer and the photosensitive resin layer that optionally exposes to form groove pattern at photosensitive resin layer;
(c) adopt photosensitive resin layer as mask etching filter material film in the filter material film, forming groove, thereby form a plurality of colour filter parts;
(d) in described groove, deposit organic pigment; And
(e) on a plurality of colour filter parts, form optical collector.
14, method according to claim 13 is characterized in that, at described step (d), and the organic pigment of deposition monochrome or the organic pigment of a plurality of colors in described groove.
15, according to claim 12 or 13 described methods, it is characterized in that,
This method also comprises before in step (a), (f) forms light receiving element on Semiconductor substrate, and (f) forms planarization film on Semiconductor substrate and light receiving element;
This method also comprises between step (d) and step (e), (h) partly provides one deck organic material at a plurality of colour filters; And
At step (e), on described organic material layer, form optical collector.
16, the method that is used to make the solid imaging element with optical collector comprises step:
(a) material layer is set on the substrate with a plurality of light receiving elements that form on it;
(b) form resist layer at described material layer with lens shape; And
(c) by etching the shape of resist is transferred to described material layer, thereby form optical collector.
17, method according to claim 16 is characterized in that, the refractive index of described material layer is 1.6 or higher.
18, method according to claim 16 is characterized in that, the material of described material layer contains carbodiimide-based.
19, method according to claim 16 is characterized in that, the material of described material layer is polyimides, phenolic resins.
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|---|---|---|---|
| JP2005010710 | 2005-01-18 | ||
| JP2005010710 | 2005-01-18 | ||
| JP2005071660 | 2005-03-14 |
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| CN1825607A true CN1825607A (en) | 2006-08-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610001435 Pending CN1825607A (en) | 2005-01-18 | 2006-01-17 | Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device |
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