CN1877867A - Solid-state image sensor and manufacturing method thereof - Google Patents

Solid-state image sensor and manufacturing method thereof Download PDF

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Publication number
CN1877867A
CN1877867A CNA2006100917092A CN200610091709A CN1877867A CN 1877867 A CN1877867 A CN 1877867A CN A2006100917092 A CNA2006100917092 A CN A2006100917092A CN 200610091709 A CN200610091709 A CN 200610091709A CN 1877867 A CN1877867 A CN 1877867A
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photoelectric conversion
refractive index
light receiving
light
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CN1877867B (en
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山口琢己
村田隆彦
春日繁孝
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP2005168724A external-priority patent/JP2006344753A/en
Priority claimed from JP2005168726A external-priority patent/JP2006344755A/en
Priority claimed from JP2005168701A external-priority patent/JP4713953B2/en
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Abstract

An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

Description

Solid photographic device and manufacture method thereof
Technical field
The present invention relates to be used for the solid photographic device of digital camera etc., relate in particular to the light receiving unit that constitutes solid photographic device.
Background technology
In general solid photographic device, has following structure: on Semiconductor substrate, form a plurality of light receiving units, each light receiving unit has the colour filter that carries out color separation that the light of injecting by the peristome of photomask is carried out the photoelectric conversion department of light-to-current inversion and forms on photomask, colour filter generally is primary color filters or complementary colours filter.Primary color filters adopts red (R), blue (R) and green (G), and adopting red complementary colours promptly dark green (C), green complementary colours in the complementary colours filter is peony (M) and blue complementary colours promptly yellow (Y).Generally in the solid photographic device that adopts the complementary colours filter, adopt the signal that obtains by this 3 look and green (G).And, each light receiving unit is distributed above-mentioned a certain color by certain figure.So, each light receiving unit generates signal (for example referring to patent documentation 1,2) according to the brightness by the chrominance signal after the colour filter color separation.
And, realize high sensitivity in order to amplify above-mentioned signal, at the lenticule of formation up and down of colour filter etc., to realize high letter/make an uproar than (for example referring to patent documentation 3).
Moreover, as realizing highly sensitive method, following scheme is proposed: for example in the peristome of photomask, place high-index material and the low-index material on every side that forms around high-index material, utilization is carried out optically focused (for example referring to patent documentation 4) in the total reflection on the border of high-index material and low-index material.
Fig. 1 is the figure that the camera structure of solid photographic device is adopted in expression.
In this camera, incident light 24 arrives the solid photographic device 3 that is placed in the camera 2 by camera lens 34.
Fig. 2 is the figure of arrangement of the light receiving unit of expression solid photographic device in the past.
In this solid photographic device, by a plurality of light receiving units (being positioned at the light receiving unit of central part A and periphery B, C etc.) that are arranged in the ranks shape light of injecting by camera lens shown in Figure 1 34 is carried out light-to-current inversion, obtain image.
Fig. 3 represents light receiving unit 1a, the 1b of solid photographic device in the past, the sectional view of 1c.
Each light receiving unit is the basis by the Semiconductor substrate 11 that the silicon that has added N type impurity constitutes, and forms insulating barrier 13, metal level 14 and colour filter 15 and forms.At this moment, in Semiconductor substrate 11, be formed with light-to-current inversion layer 12.Light-to-current inversion layer 12 is to form P type trap 16 by injecting p type impurity to Semiconductor substrate 11 ions, and the N type district that also has by forming to P type trap 16 ions injection N type impurity is the floor of photoelectric conversion department 17.
Insulating barrier 13 is by for light-to-current inversion layer 12 and metal level 14 being insulated and being arranged on the layer that the interlayer film 18 on the light-to-current inversion layer 12 constitutes.
Metal level 14 is the layers that comprise lens 30 in photomask 19 and the layer.In the formation of metal level 14, after having formed photomask 19, on photomask 19, form interlayer film 29 as planarization layer.Moreover, after the interlayer film 29 on having formed photomask 19, lens 30 in the cambium layer.In layer on the lens 30 with film 31 between the mode cambium layer on the surface of lens in the cover layer 30.
Colour filter 15 is the layers with the colour filter that is made of blue colour filter film 21a, green colour filter film 21b and red colour filter film 21c and the interlayer film 22 on the colour filter.
Incident light 24 is injected from light receiving unit 1a, 1b, 1c top, carries out optically focused by the lenticule 23 that is formed on the colour filter, sees through blue colour filter film 21a, green colour filter film 21b or red colour filter film 21c.After the light that has seen through colour filter carries out optically focused by lens in the layer 30 once more,, arrive photoelectric conversion department 17 through peristome 20. Light receiving unit 1a, 1b, 1c are on one side to be that the width of peristome 20 is greatly to more than the 2.0 μ m under the situation of foursquare big light receiving unit of 5.6 μ m as before.So for example the visible light of the red wavelength of the 650nm of long wavelength side etc. can not be subjected to the influence ground of peristome width fully to see through peristome.And the light of near-infrared wavelength that is used in the long wavelength side of dark field camera etc. also can fully see through peristome.
Patent documentation 1: Japanese kokai publication hei 10-341012 communique
Patent documentation 2: Japanese kokai publication hei 5-326902 communique
Patent documentation 3: TOHKEMY 2000-164837 communique
Patent documentation 4: Japanese kokai publication hei 6-224398 communique
Yet in order to realize the high pixelation of solid photographic device, if light receiving unit is dwindled by miniaturization, the width of the peristome of photomask is near wavelength of visible light such as red (R) coloured light, green (G) coloured light and indigo plant (B) coloured light.And, the width of the peristome of photomask becomes than under the little situation of visible wavelength, seen through in the light wavelength of colour filter, light by the wavelength band more than the specific wavelength of peristome width decision is interdicted, the light of the wavelength that this blocking wavelength is above can not see through peristome, can not arrive photoelectric conversion department.In the case, especially the decline of the transmissivity of red (R) coloured light of long wavelength side is very remarkable.For example, in a vacuum, under the situation of the peristome that the light transmission of the red wavelength of 650nm is narrow, the light of 650nm wavelength in a vacuum is at the silicon oxide film (SiO that by refractive index is 1.45 2) in the peristome of filling, have the 450nm of wavelength divided by the wavelength (650nm/1.45=450nm) of the value of refractive index.Therefore, the optical transmission rate of the wavelength of 650nm in this vacuum almost is zero when the width of peristome is roughly 450nm, still, in fact begins to reduce near the A/F 650nm.So the material of filling opening portion is silicon oxide film (SiO 2) wait under the situation of low-index material, can not see through wavelength and be and the width of the peristome light more than roughly equal.
Especially light receiving unit is on one side less than under the situation that is foursquare small-sized light receiving unit below the 3.2 μ m, and the width of peristome becomes below the 1.0 μ m.With narrow like this peristome width, under the situation that the complanation layer of filling opening portion is made of low-index material, the light of the wavelength of long wavelength's sides such as near infrared light of the visible light of long wavelength's red wavelength and 1.0～2.0 μ m especially can not see through.For example, at the complanation layer of filling opening portion silicon oxide layer (SiO by the low-refraction of refractive index 1.5 2) or refractive index be that long wavelength's light can not see through peristome under the situation about constituting such as 1.3～1.7 low refractive index resin.
And under the width of the peristome of the photomask situation littler than visible wavelength, even have under the situation of lens in lenticule or the layer, the light that also is difficult to have seen through each colour filter film gathers peristome.Especially promptly red (R) coloured light of long wavelength's light and short wavelength's light promptly green (G) coloured light, indigo plant (B) coloured light are difficult with optically focused, make it arrive photoelectric conversion department so be difficult to see through peristome.
Moreover, as represent that light is to Fig. 4 of situation about injecting in the solid photographic device (light receiving unit), the chief ray of the light of injecting by camera lens 34, vertically be injected into the light receiving unit 1 of central part A, but tilt to be injected into the light receiving unit 1 of periphery B, C, be in different situations so in solid photographic device, inject state to the lenticular light of each light receiving unit 1.Therefore, in order to realize many pixelations of solid photographic device, if light receiving unit is reduced by miniaturization, then the width of the peristome 20 of photomask 19 becomes extremely narrow.Even under the situation of the narrowed width of the peristome 20 of photomask 19, sectional view as light receiving unit (being positioned at the light receiving unit of central part A, periphery C) is promptly shown in Figure 5, light receiving unit 1 at the central part A of solid photographic device, incident light 24 is vertically injected lenticule 23, so incident light 24 can be converged to photoelectric conversion department 17 in the light receiving unit 1 of central part A.But, at the light receiving unit 1 of periphery C, incident light 24 is injected into lenticule 23 obliquely, so even under the situation by lenticule 23 optically focused, incident light 24 arrives photomask 19 and can not enter peristome 20, is difficult to incident light 24 is converged to photoelectric conversion department 17.
And,, arrange light receiving unit as illustrated in fig. 6 being in the solid photographic device of feature with the wide dynamic range.That is to say that a plurality of light receiving unit A that accept low intensity light arrange a plurality of with the light receiving unit B ranks shape ground of accepting high-luminance light.Carried out the signal of light-to-current inversion by light receiving unit A that accepts low intensity light and the light receiving unit B that receives high-luminance light, be synthesized, obtained the image of wide dynamic range in the inside or the outside of solid photographic device.In such solid photographic device,, in accepting the light receiving unit A of low intensity light, form the big peristome 20A of A/F as sectional view (sectional view between the M-N of Fig. 6) shown in Figure 7 of expression light receiving unit (light receiving unit A, the B of Fig. 6); In accepting the light receiving unit B of high-luminance light, form the little peristome 20B of A/F.So, the decline of the concentration ratio of the light that is caused by the miniaturization of light receiving unit for compensation makes in the big peristome 20A of width under the situation of optically focused the best of lenticule 23, the part of incident light 24 is difficult to enter the little peristome 20B of width, reduce so see through the incident light 24 of peristome 20B, the sensitivity of accepting the light receiving unit B of high-luminance light greatly descends.And, periphery at solid photographic device, the incidence angle of incident light 24 is compared increase with central part, so, see through the more difficult convergence of light of peristome 20B, with respect to the sensitivity of the light receiving unit B of central part, the sensitivity of the light receiving unit B of periphery descends bigger, it is even to produce sensitivity Cheng Yin (shading) and irregular colour, and therefore the deterioration in image quality that obtains is remarkable.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of when improving the photomask A/F and reduce light transmission capacity and can significantly improve the small solid-state image sensor of sensitivity.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; Photoelectric conversion department is formed on the above-mentioned Semiconductor substrate; Photomask is provided with the peristome that is positioned at above-mentioned photoelectric conversion department top and forms, and is arranged on the above-mentioned Semiconductor substrate; And high refractive index layer, be formed in the above-mentioned peristome, the A/F of above-mentioned peristome is littler than the maximum wavelength that is converted into the vacuum medium wavelength of the light of injecting above-mentioned photoelectric conversion department by above-mentioned peristome, above-mentioned high refractive index layer is made of high-index material, and this high-index material has makes the refractive index of injecting light transmission light, above-mentioned maximum wavelength of above-mentioned photoelectric conversion department by above-mentioned peristome.Here, above-mentioned solid photographic device also has filter coating, and this filter coating is arranged to be positioned at above-mentioned peristome top, makes the light transmission of certain wavelengths band; The A/F of above-mentioned peristome is littler than the above-mentioned maximum wavelength of the light that above-mentioned filter coating sees through.
In relating to solid photographic device of the present invention, utilization becomes the principle of the wavelength in the vacuum divided by the value (wavelength in the vacuum/(refractive index N)) of refractive index by the light wavelength in the peristome, come filling opening portion with high-index material, make through the light wavelength in the peristome to reduce relatively.Thereby through the maximum wavelength of the optical transmission wavelength band in the peristome, the refractive index in peristome is under the situation of N, if be converted into the wavelength in the vacuum, then only increases the refractive index times (N doubly) of the high-index material of filling opening portion.Its result, the narrowed width of peristome is even under or the situation less than it identical with the light of answering transmission wavelength in a vacuum at the width of peristome, also can make transmittance by come filling opening portion with high-index material.That is to say, can realize to increase substantially the sensitivity of the light of long wavelength side, improve the small solid-state image sensor of sensitivity significantly.
And, in order to achieve the above object, also can in above-mentioned peristome, be filled with above-mentioned high refractive index layer.
By adopting said structure, high-index material is filled in whole zone in peristome, can increase mean refractive index whole in the peristome, so, can make through the transmission peak wavelength band in a vacuum of the light in the peristome more mobilely, can improve the luminous sensitivity of long wavelength side more to long wavelength side.
And, shown in the Japanese kokai publication hei 6-224398 communique, in peristome with around high-index material around mode dispose low-index material, utilization is undertaken by the total reflection on the border of high-index material and low-index material under the situation of method of optically focused, need in peristome, import low-index material energetically, so the width of the high-index material in the peristome is the value that deducts the width of the low-index material in the peristome from the width of peristome.Therefore, the light wavelength that can see through in fact under this example situation is decided by the width of must ratio open portion width little high-index material.Therefore, the A/F of essence reduces, and the light of the transmission peak wavelength of long wavelength side is restricted, and is unfavorable for improving sensitivity.Yet by adopting said structure, the width of peristome becomes the width of the high-index material in the peristome, can increase the A/F of essence, so the light of the transmission peak wavelength of long wavelength side is unrestricted, can realize improving sensitivity.
And in order to achieve the above object, above-mentioned high refractive index layer also can be made of the high-index material with the refractive index more than 1.8.
As above-mentioned structure, by utilizing refractive index is that high-index material more than 1.8 is as the material of the formation high refractive index layer of filling opening portion, even under the width of peristome is situation below the 1.0 μ m, also can make the light transmission of wavelength of the long wavelength side of near the light of the wavelength long wavelength in the visible light red, the near infrared light of 1.0～2.0 μ m etc.
Moreover to achieve these goals, the thickness of above-mentioned high refractive index layer and the thickness of above-mentioned photomask are roughly the same, and perhaps the thickness than above-mentioned photomask is big.
By adopting said structure, the thickness of the high material of refractive index in the peristome is equated or bigger than it with the thickness of peristome short transverse, can make the blocking wavelength of the wavelength that is converted in the vacuum more mobile to long wavelength side, so can enlarge long wavelength side transmission peak wavelength band, the sensitivity that can improve long wavelength side through the light in the peristome.
And in order to achieve the above object, above-mentioned high refractive index layer also can have convex lens shape, assembles the light of injecting above-mentioned photoelectric conversion department by peristome.
By adopting said structure, make the upper surface of the high-index material that sees through the light in the peristome form convex lens shape, can be directly over peristome optically focused, so under the situation of width near visible wavelength of peristome, especially can increase substantially concentration ratio.
Moreover, in the light receiving unit miniaturization and under the situation that unit interval dwindles in the horizontal, also can be shown in Fig. 3 and TOHKEMY 2000-164837 communique, the same layer interior lens and the interior lens of the layer interlayer film up and down of needing with the past be not so the longitudinal size on the photomask changed with the past.Therefore, no matter unit interval dwindles in the horizontal, longitudinal size can not dwindle, and therefore is difficult to narrow peristome optically focused, and light gathering efficiency greatly worsens.But, by adopting said structure, can be omitted in the interior lens of layer of photomask top essential in the structure of solid photographic device in the past, can reduce the height of light receiving unit integral body, so can not produce the problems referred to above.
And in order to achieve the above object, above-mentioned high-index material also can be any in oxidation phthalein, tantalum oxide and the niobium oxide.
Titanium oxide, tantalum oxide and the high-index materials such as niobium oxide or hafnium oxide of said structure are used for high refractive index layer, with the situation of the silica of the refractive index 1.5 that generally is commonly used for insulating barrier relatively, can access the refractive index in the especially big peristome, can make the wavelength that is converted in the vacuum see through light in the peristome to see through wavelength band more mobile to long wavelength side, so can further improve the sensitivity of long wavelength side.
And in order to achieve the above object, above-mentioned A/F also can be smaller or equal to 1.0 μ m.
By adopting said structure, in the frequency band below the main uptake zone 1.0 μ m of the silicon that constitutes photoelectric conversion department, will increase to the effect of long wavelength side expansion through the wavelength band that sees through of the light in the peristome, so can realize significantly improving sensitivity.
As described above, in solid photographic device of the present invention, do not sacrifice sensitivity and can realize fine light receiving unit, can be increased in the pixel count in the particular optical size (for example 1/4 inch etc.) of image pickup part, so in utilizing the camera of solid photographic device of the present invention, can realize having the camera of the high image quality of high sensitivity and high pixel.
In order to achieve the above object, relate to the manufacture method of solid photographic device of the present invention, it is characterized in that, comprising: peristome forms operation, form photomask being formed with on the Semiconductor substrate of photoelectric conversion department, in above-mentioned photomask, form the peristome that is positioned at above the above-mentioned photoelectric conversion department; And high refractive index layer formation operation, in above-mentioned peristome He on the above-mentioned photomask, form high refractive index layer; Form in the operation at above-mentioned high refractive index layer, form the above-mentioned high refractive index layer that has an even surface that thickness makes above-mentioned high refractive index layer.Here, form in the operation, also can form 1/2 the above-mentioned high refractive index layer of thickness more than or equal to the width of above-mentioned peristome at above-mentioned high refractive index layer.
By adopting said structure, in peristome, form the high high refractive index layer of refractive index, form the high high refractive index layer of refractive index again on the high refractive index layer in peristome continuously, thereby utilize the high high refractive index layer of refractive index to make peristome top planarization, so can not make and inject the light diffuse reflection in the peristome and inject peristome, can prevent that sensitivity from descending.
And in order to achieve the above object, the manufacture method of above-mentioned solid photographic device also comprises the planarization operation of the surface of above-mentioned high refractive index layer being carried out planarization.
By adopting said structure, in peristome, form the high high refractive index layer of refractive index, form the high high refractive index layer of refractive index again on the high refractive index layer in peristome continuously, utilize methods such as CMP that the high high refractive index layer of refractive index is carried out the planarization etching then, so can improve the flatness of the high refractive index layer of peristome top, the diffuse reflection of the light that is injected into peristome is minimized.Its result can make inhomogeneous the minimizing between the light receiving unit of the light quantity that can be injected into peristome, and it is inhomogeneous to improve sensitivity significantly.
And in order to achieve the above object, the manufacture method of above-mentioned solid photographic device comprises that also the above-mentioned high refractive index layer that will be positioned at the peristome top is processed into the lens formation operation of convex lens shape.
By adopting said structure, in peristome, form the high high refractive index layer of refractive index, form the high high refractive index layer of refractive index again on the high refractive index layer in peristome continuously, then, come lens in the cambium layer with the high high refractive index layer of refractive index, lens can reduce the operation of making solid photographic device with required special film formation process in the layer in the past so can remove.Its result can provide cheap solid photographic device.And lens are positioned at the dead ahead of photomask in the layer, so even under the little situation of peristome width, also optically focused expeditiously can be realized high sensitivity.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And colour filter, being arranged on the above-mentioned Semiconductor substrate, corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the filter coating that the 2nd photoelectric conversion department is positioned at than above-mentioned the 1st photoelectric conversion department top sees through the more below of the filter coating of long wavelength's light; Be positioned at the above-mentioned lenticular refractive index of above-mentioned the 2nd photoelectric conversion department top, bigger than the above-mentioned lenticular refractive index that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, in relating to solid photographic device of the present invention, can make be formed on through on the colour filter film of long wavelength light or under lenticular refractive index, than be formed on through on the colour filter film of short-wavelength light or under lenticular refractive index big.Its result, the long wavelength that can improve the optically focused difficulty with the concentration ratio of light, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.Its result, even at light receiving unit and under the situation that the A/F of photomask reduces by miniaturization, also can improve the concentration ratio of light, increase the light quantity of the narrow peristome that sees through photomask, can make the small solid-state image sensor that to improve sensitivity significantly.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And colour filter, being arranged on the above-mentioned Semiconductor substrate, corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes; Above-mentioned lenticule is made of low-index material and high-index material; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the filter coating that the 2nd photoelectric conversion department is positioned at than above-mentioned the 1st photoelectric conversion department top sees through the more filter coating below of long wavelength light; Be arranged in the volume of the high-index material that the above-mentioned lenticule of above-mentioned the 2nd photoelectric conversion department top comprises, the volume of the high-index material that comprises than the above-mentioned lenticule that is arranged in above-mentioned the 1st photoelectric conversion department top is big.
By adopting said structure, lenticule is made of low-index material and the multiple material of high-index material, by its volume ratio is changed, make see through the long wavelength with the colour filter of light on or lenticular mean refractive index down, than through on the colour filter of the light of short wavelength band or under lenticular mean refractive index big.Its result, the long wavelength that can improve the optically focused difficulty with the concentration ratio of light, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
In addition, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And colour filter, being arranged on the above-mentioned Semiconductor substrate, corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is positioned at than the filter coating of above-mentioned the 1st photoelectric conversion department top, sees through the more below of the filter coating of long wavelength's light; Be positioned at the above-mentioned lenticular height of above-mentioned the 2nd photoelectric conversion department top, than the above-mentioned lenticule height that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopt said structure, can make be formed on through on the colour filter of long wavelength light or under lenticular height, than be formed on through on the colour filter of short-wavelength light or under lenticular height height.Its result, the long wavelength that can improve the optically focused difficulty with the concentration ratio of light, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
And, in order to achieve the above object, be positioned at the above-mentioned lenticular refractive index of above-mentioned the 2nd photoelectric conversion department top, also can be bigger than the above-mentioned lenticular refractive index that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, be formed on through on the colour filter of long wavelength's light or under lenticular refractive index, than be formed on through on the colour filter of short wavelength's light or under lenticular refractive index big.Its result except the effect that increases lens height, also increases the effect of refractive index, thus can further improve the long wavelength with the concentration ratio of light, therefore can increase substantially the sensitivity of long wavelength's light being carried out the photoelectric conversion department of light-to-current inversion.
And, in order to achieve the above object, constitute above-mentioned lenticular material and can be in oxidation phthalein, tantalum oxide, niobium oxide and the hafnium oxide any.
As above-mentioned structure, high-index materials such as titanium oxide, tantalum oxide, niobium oxide or hafnium oxide are used for lenticule, compare with the silicon oxide film of the refractive index 1.45 that generally is commonly used for dielectric film, can realize especially big refractive index.Its result, can improve the long wavelength with the concentration ratio of light, so can increase substantially the sensitivity of long wavelength light being carried out the photoelectric conversion department of light-to-current inversion.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; High refractive index film is arranged on the above-mentioned Semiconductor substrate; And colour filter, being arranged on the above-mentioned Semiconductor substrate, corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is positioned at than the filter coating of above-mentioned the 1st photoelectric conversion department top, sees through the more below of the filter coating of long wavelength's light; Be positioned at the refractive index of the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, bigger than the refractive index of the above-mentioned high refractive index film that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, be positioned at through the long wavelength with the colour filter of light on or under the refractive index of high refractive index film, than be positioned at through on the colour filter of the light of short wavelength band or under the refractive index of high refractive index film big.Its result, the long wavelength of optically focused difficulty with light when injecting light receiving unit with bigger incidence angle, pass through high refractive index film, the light of injecting with big incident angle is easily to the crooked incident of the direction of photoelectric conversion department, thus can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; High refractive index film is arranged on the above-mentioned Semiconductor substrate; And colour filter, being arranged on the above-mentioned Semiconductor substrate, corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is positioned at than the filter coating of above-mentioned the 1st photoelectric conversion department top, sees through the more below of the filter coating of long wavelength's light; Be positioned at the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, than the above-mentioned high index of refraction thickness that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, be positioned at through the long wavelength with the colour filter of light on or under the thickness of high index of refraction tunic, than be positioned at through on the colour filter of the light of short wavelength band or under the thickness of high refractive index film big.Its result, the long wavelength of optically focused difficulty with light when injecting light receiving unit with big incident angle, by thick high refractive index film, the light of injecting with bigger incident angle is injected to the direction bending of photoelectric conversion department easily, thus can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
And in order to achieve the above object, the material that constitutes above-mentioned high refractive index film can comprise any in oxidation phthalein, tantalum oxide, niobium oxide and the hafnium oxide.
As above structure, high-index materials such as titanium oxide, tantalum oxide, niobium oxide or hafnium oxide are used for high refractive index film, with the situation of the silicon oxide film of the refractive index 1.45 that generally is commonly used for insulating barrier relatively, can realize especially big refractive index.Its result, can improve the long wavelength with the concentration ratio of light, so can increase substantially the sensitivity of long wavelength's light being carried out the photoelectric conversion department of light-to-current inversion.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments, and a plurality of lenticule are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department; Be positioned at the above-mentioned lenticular refractive index of above-mentioned the 2nd photoelectric conversion department top, bigger than the above-mentioned lenticular refractive index that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, in relating to solid photographic device of the present invention, the lenticular refractive index of the light receiving unit that the angle of light degree is big, the lenticular refractive index of the light receiving unit littler than angle of light degree is big, so can improve the concentration ratio of the big light receiving unit of angle of light degree, increase substantially sensitivity.Its result under the situation that the A/F of photomask reduces, also can be improved the concentration ratio of light by miniaturization at light receiving unit, increases the light quantity of the narrow peristome that sees through photomask, can realize improving significantly the small solid-state image sensor of sensitivity.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And a plurality of lenticules, being arranged on the above-mentioned Semiconductor substrate, corresponding each above-mentioned photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; Above-mentioned lenticule is made of low-index material and high-index material; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department; Be arranged in the volume of the high-index material that the above-mentioned lenticule of above-mentioned the 2nd photoelectric conversion department top comprises, the volume of the high-index material that comprises than the above-mentioned lenticule that is arranged in above-mentioned the 1st photoelectric conversion department top is big.
By adopting said structure, lenticule is made of low-index material and the multiple material of high-index material, its volume ratio is changed, can make the lenticular mean refractive index of the big light receiving unit of angle of light degree, the lenticular mean refractive index of the light receiving unit littler than angle of light degree is big.Its result can improve the concentration ratio of the big light receiving unit of the incident angle of light of optically focused difficulty, can increase substantially sensitivity.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And a plurality of lenticules, being arranged on the above-mentioned Semiconductor substrate, corresponding each above-mentioned photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department; Be positioned at the above-mentioned lenticular height of above-mentioned the 2nd photoelectric conversion department top, than the above-mentioned lenticule height that is positioned at above-mentioned the 1st photoelectric conversion department top.
Since adopt said structure, the lenticular height of the light receiving unit that the angle of light degree is big, and the lenticular average height height of the light receiving unit littler than angle of light degree is so can increase substantially the sensitivity of the big light receiving unit of the incident angle of light.
And, in order to achieve the above object, also can make the above-mentioned lenticular refractive index that is positioned at above-mentioned the 2nd photoelectric conversion department top, bigger than the above-mentioned lenticular refractive index of above-mentioned the 1st photoelectric conversion department top.
By the employing said structure, the lenticular refractive index of the light receiving unit that the angle of light degree is big, the lenticular refractive index of the light receiving unit littler than angle of light degree is big, so, can increase substantially the sensitivity of the big light receiving unit of angle of light degree.
And, in order to achieve the above object, constitute above-mentioned lenticular material and also can comprise in titanium oxide, tantalum oxide, niobium oxide and the hafnium oxide any.
As above-mentioned structure, high-index materials such as titanium oxide, tantalum oxide, niobium oxide and hafnium oxide are used for lenticule, thereby compare with the situation of the silicon oxide layer of the refractive index 1.45 that generally is commonly used for dielectric film, especially especially big refractive index can be realized, the sensitivity of the big light receiving unit of angle of light degree can be increased substantially.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And high refractive index film, be arranged on the above-mentioned Semiconductor substrate; Have the 1st photoelectric conversion department and second photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, this second photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department; Be positioned at the refractive index of the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, bigger than the refractive index of the above-mentioned high refractive index film that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, the refractive index of the high refractive index film that the light receiving unit that the angle of light degree is big is interior, refractive index than the high refractive index film in the little light receiving unit of angle of light degree is big, so utilize the high refractive index film that is positioned at the big light receiving unit of angle of light degree, the light of injecting with bigger incident angle is injected to the direction bending of photoelectric conversion department, therefore can be increased substantially the sensitivity of the big light receiving unit of angle of light degree.
Moreover, in order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that having: Semiconductor substrate; A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And high refractive index film, be arranged on the above-mentioned Semiconductor substrate; Have the 1st photoelectric conversion department and second photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, this second photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department; Be positioned at the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, than the above-mentioned high index of refraction thickness that is positioned at above-mentioned the 1st photoelectric conversion department top.
By adopting said structure, make the thickness of the high refractive index film in the big light receiving unit of angle of light degree, thickness than the high refractive index film in the little light receiving unit of angle of light degree is thick, therefore, utilization is positioned at the high refractive index film of the big light receiving unit of angle of light degree, the light of injecting with bigger incident angle is injected to the bending of photoelectric conversion department direction, therefore, can be increased substantially the sensitivity of the big light receiving unit of angle of light degree.
And in order to achieve the above object, the material that constitutes above-mentioned high refractive index layer also can comprise any in titanium oxide, tantalum oxide, niobium oxide and the hafnium oxide.
As above-mentioned structure, high-index materials such as titanium oxide, tantalum oxide, niobium oxide and hafnium oxide are used for high refractive index film, thereby compare with the situation of the silicon oxide layer of the refractive index 1.45 that generally is commonly used for dielectric film, especially big refractive index can be realized, the sensitivity of the big light receiving unit of angle of light degree can be increased substantially.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that, on Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, has lenticule, have the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger than above-mentioned the 1st A/F in a plurality of above-mentioned light receiving units, the lenticular refractive index of above-mentioned the 2nd light receiving unit of lenticular refractive index ratio of above-mentioned the 1st light receiving unit is big.
Like this, relate to solid photographic device of the present invention, make the lenticular refractive index of the little light receiving unit of A/F, the lenticular refractive index of the light receiving unit that the ratio open width is big is big.Its result can optimize the concentration ratio of little light receiving unit of A/F and the big light receiving unit of A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.Its result under the situation that the photomask A/F reduces, also can be improved the concentration ratio of light by miniaturization at light receiving unit, increases the light quantity of the narrow peristome that sees through photomask, can realize improving significantly the small solid-state image sensor of sensitivity.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that, on Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, has lenticule, in a plurality of above-mentioned light receiving units, there is the 1st light receiving unit with the 1st A/F, and the 2nd light receiving unit with the 2nd A/F bigger than above-mentioned the 1st A/F, the lenticule of the lenticule of above-mentioned the 1st light receiving unit and above-mentioned the 2nd light receiving unit, at least formed by low-index material and high-index material respectively, the volume of the high-index material that comprises in the lenticule of above-mentioned the 2nd light receiving unit of the volume ratio of the high-index material that comprises in the lenticule of above-mentioned the 1st light receiving unit is big.
Like this, under the situation that lenticule is made of low-index material and high-index material, make the volume of the high-index material that is comprised in the lenticule of the little light receiving unit of A/F, the volume of the high-index material that comprises in the lenticule of the light receiving unit that the ratio open width is big is big, thereby make the lenticular mean refractive index of the little light receiving unit of A/F, the lenticular mean refractive index of the light receiving unit that the ratio open width is big is big.Its result can optimize the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that, on Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, has lenticule, in a plurality of above-mentioned light receiving units, there is the 1st light receiving unit with the 1st A/F, and the 2nd light receiving unit with the 2nd A/F bigger than above-mentioned the 1st A/F, has the 1st high index of refraction interlayer film that is configured on above-mentioned the 1st light receiving unit, with the 2nd high index of refraction interlayer film that is configured on above-mentioned the 2nd light receiving unit, the refractive index of above-mentioned the 2nd high index of refraction interlayer film of the refractive index ratio of above-mentioned the 1st high index of refraction interlayer film is big.
Like this, be positioned at the refractive index of the high index of refraction interlayer film on the little light receiving unit of A/F, bigger than the refractive index that is positioned at the high index of refraction interlayer film on the big light receiving unit of A/F, so utilize the high index of refraction interlayer film that is positioned on the big light receiving unit of angle of light degree, the light of injecting with bigger incident angle is injected to the direction bending of photoelectric conversion department.Its result can optimize the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.
In order to achieve the above object, relate to solid photographic device of the present invention, it is characterized in that, on Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, has lenticule, in a plurality of above-mentioned light receiving units, there is the 1st light receiving unit with the 1st A/F, and the 2nd light receiving unit with the 2nd A/F bigger than above-mentioned the 1st A/F, has the 1st high index of refraction interlayer film that is configured on above-mentioned the 1st light receiving unit, with the 2nd high index of refraction interlayer film that is configured on above-mentioned the 2nd light receiving unit, the thickness of above-mentioned the 2nd high index of refraction interlayer film of the Film Thickness Ratio of above-mentioned the 1st high index of refraction interlayer film is thick.
Like this, be positioned at the thickness of the high index of refraction interlayer film on the little light receiving unit of A/F, thicker than the thickness that is positioned at the high index of refraction interlayer film on the big light receiving unit of A/F, so utilize the high index of refraction interlayer film that is positioned on the big light receiving unit of angle of light degree, the light of injecting with bigger incident angle is injected to the direction bending of photoelectric conversion department.Its result can optimize the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.
In order to achieve the above object, it is characterized in that, on Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, has lenticule, in a plurality of above-mentioned light receiving units, there are the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger, the lenticular height height of above-mentioned the 2nd light receiving unit of lenticular aspect ratio of above-mentioned the 1st light receiving unit than above-mentioned the 1st A/F.
Like this, be positioned at the lenticular height on the little light receiving unit of A/F, than the lenticular height height that is positioned on the big light receiving unit of A/F.Its result can optimize the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.
And, it is characterized in that the lenticular refractive index of above-mentioned the 1st light receiving unit of lenticular refractive index ratio of above-mentioned the 2nd light receiving unit is big.Like this, make the lenticular refractive index on the big light receiving unit of lenticular refractive index ratio A/F on the little light receiving unit of A/F big.Its result can optimize the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F simultaneously, can increase substantially the sensitivity of the light receiving unit with two A/Fs.
It is characterized in that the material of lenticule or interlayer film comprises titanium oxide, tantalum oxide, niobium oxide and hafnium oxide at least.Like this, by adopting high-index materials such as titanium oxide, tantalum oxide, niobium oxide and hafnium oxide, compare with the situation of the silicon oxide layer of the refractive index 1.45 that generally is commonly used for dielectric film, can access king-sized refractive index, therefore, the concentration ratio of the big light receiving unit of little light receiving unit of A/F and A/F can be optimized simultaneously, the sensitivity of light receiving unit can be increased substantially with two A/Fs.
The invention effect
Solid photographic device of the present invention adopts the high high-index material of refractive index in the peristome of the photomask that forms on photoelectric conversion department, even under the situation of peristome narrowed width, also can keep bigger through the optical transmission wavelength band of peristome.Like this,, also can prevent from significantly to descend, can realize miniaturization and high sensitivity in the sensitivity of long wavelength side even under the situation that the light receiving unit of solid photographic device reduces, peristome reduces.Moreover, the high-index material that also forms the landfill peristome above peristome is continuously carried out planarization, thereby can reduce the diffuse reflection of the light above peristome,, can realize high image quality preventing that the sensitivity that suppresses between light receiving unit when sensitivity descends is inhomogeneous.And, on peristome, also form after the high-index material of landfill peristome continuously, utilize this high-index material to form lenticule and can realize high sensitivity, height believe/make an uproar than solid photographic device, therefore, can realize the camera of high image quality.
Solid photographic device of the present invention, make and see through on the colour filter of long wavelength light or form down, lenticular refractive index, constitute the volume or the lenticular height of lenticular high-index material, the perhaps thickness of the refractive index of high-index material or high-index material, with see through on the colour filter of short-wavelength light or form down, lenticular refractive index, constitute the volume or the lenticular height of lenticular high-index material, the perhaps thickness difference of the refractive index of high-index material or high-index material, and can improve the long wavelength with the concentration ratio of light, can increase substantially the sensitivity of long wavelength's light being carried out the photoelectric conversion department of light-to-current inversion.Like this, can realize high sensitivity, height believe/make an uproar than solid photographic device, we can say that the present invention is effective to the camera of realizing high image quality.
Solid photographic device of the present invention, the big light receiving unit of incident angle at light is formed, lenticular refractive index, constitute the volume or the lenticular height of lenticular high-index material, the perhaps thickness of the refractive index of high-index material or high-index material, with form at the little light receiving unit of the incident angle of light, lenticular refractive index, constitute the volume or the lenticular height of lenticular high-index material, the perhaps thickness difference of the refractive index of high-index material or high-index material, and can increase substantially the sensitivity of the big light receiving unit of the incident angle of light.Like this, can realize high sensitivity, height believe/make an uproar than solid photographic device, therefore, we can say that the present invention is effective to the camera of realizing high image quality.
Solid photographic device of the present invention, make and on the little light receiving unit of A/F, form, lenticular refractive index, the volume of lenticular high-index material, lenticular height, the refractive index of high-index material, the perhaps thickness of high-index material, with on the big light receiving unit of A/F, form, lenticular refractive index, the volume of lenticular high-index material, lenticular height, the refractive index of high-index material, the perhaps thickness difference of high-index material, and can increase substantially the sensitivity of the big light receiving unit of the incident angle of light.Like this, can realize high sensitivity and high believe/make an uproar than solid photographic device, we can say that solid photographic device of the present invention is effective to the camera of realizing high image quality.
Description of drawings
Fig. 1 is the figure that the camera of solid photographic device is adopted in expression.
Fig. 2 is the figure of arrangement of the light receiving unit of expression solid photographic device in the past.
Fig. 3 is the sectional view of the light receiving unit of expression solid photographic device in the past.
Fig. 4 is situation is injected in figure from expression to the light of the solid photographic device (light receiving unit) in past.
Fig. 5 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of expression solid photographic device in the past.
Fig. 6 is that expression is the figure of arrangement of light receiving unit of the solid photographic device of feature with the wide dynamic range.
Fig. 7 represents that the wide dynamic range with the past is the light receiving unit A of the solid photographic device of feature, the sectional view of B.
Fig. 8 is the sectional view of light receiving unit of the solid photographic device of embodiments of the present invention 1.
Fig. 9 is the figure of the transmissison characteristic of expression colour filter and peristome.
Figure 10 is the sectional view of the formation method of the structure on the photomask in the light receiving unit of solid photographic device of expression embodiment of the present invention 1.
Figure 11 is the sectional view of light receiving unit of the solid photographic device of expression embodiment of the present invention 2.
Figure 12 is the sectional view of the formation method of the structure on the photomask in the light receiving unit of solid photographic device of expression embodiment of the present invention 2.
Figure 13 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 3.
Figure 14 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 4.
Figure 15 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 5.
Figure 16 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 6.
Figure 17 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 7.
Figure 18 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 8.
Figure 19 is the sectional view of light receiving unit of the solid photographic device of embodiment of the present invention 9.
Figure 20 is the figure that injects situation to the light of the solid photographic device of embodiment of the present invention 10 (light receiving unit).
Figure 21 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 10.
Figure 22 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 11.
Figure 23 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 12.
Figure 24 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 13.
Figure 25 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 14.
Figure 26 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 15.
Figure 27 is the light receiving unit A of the solid photographic device of execution mode 16, the sectional view of B.
Figure 28 is the light receiving unit A of the solid photographic device of execution mode 17, the sectional view of B.
Figure 29 is the light receiving unit A of the solid photographic device of execution mode 18, the sectional view of B.
Figure 30 is the light receiving unit A of the solid photographic device of execution mode 19, the sectional view of B.
Figure 31 is the light receiving unit A of the solid photographic device of execution mode 20, the sectional view of B.
Figure 32 is the light receiving unit A of the solid photographic device of execution mode 21, the sectional view of B.
Embodiment
Below with reference to the accompanying drawings, the solid photographic device in the detailed description embodiments of the present invention.And following execution mode is not a limitation of the invention.
(execution mode 1)
Fig. 8 is light receiving unit 111a, the 111b of the solid photographic device of embodiment of the present invention 1, the sectional view of 111c.The Semiconductor substrate 11 of each light receiving unit, light-to-current inversion layer 12 and insulating barrier 13 have the identical structure of structure in the light receiving unit with the past shown in Figure 3.
Metal level 114 is the same layers that comprise lens 30 in photomask 19 and the layer of the solid photographic device with the past, but in the solid photographic device of embodiment of the present invention 1, metal level 114 is after having formed photomask 19, form the peristome 20 of photomask 19 with embedded mode, has the high refractive index layer 125 that constitutes by high-index material, at this moment, the same with the structure of the light receiving unit in past, above photomask 19, be formed with lens 30 in interlayer film 29 and the layer, in layer, be formed with interlayer film 31 on the lens 30.And, on metal level 114, form the colour filter 15 that comprises interlayer film 22, on colour filter 15, be formed with lenticule 23.
In the solid photographic device of present embodiment 1, the light that sees through colour filter 15 by lenticule 23 optically focused through having formed the peristome 20 of high refractive index layer 125, arrives photoelectric conversion department 17 once more by behind 30 optically focused of lens in the layer.
At this, peristome 20 has than the little A/F of the maximum wavelength light of injecting photoelectric conversion department 17, that be converted into the wavelength in the vacuum.That is to say to have the little A/F of maximum wavelength than red (R) coloured light in the vacuum.And the refractive index that high-index material has makes the light of injecting photoelectric conversion department 17 through peristome 20 be converted into the light transmission of the maximum wavelength of vacuum medium wavelength.That is to say to have to make and inject the refractive index that red (R) coloured light of photoelectric conversion department 17 sees through through peristome 20.
Fig. 9 is the figure of the transmissison characteristic of expression colour filter 15 and peristome 20.
In injecting the light of peristome, wavelength is near the light more than the wavelength of the width of peristome 20, and being difficult to be well-known through peristome 20 and by blocking.In (for example under the situation more than the 2 μ m) under the wide situation of the width of peristome 20, because the width of peristome 20 is big, so blocking wavelength 101 is positioned at than red spectrum long wavelength side more.Therefore, see through the light of the colour filter of red (R), green (G), blue (B) spectrum, can see through peristome 20 respectively.But along with the miniaturization of light receiving unit 111a, 111b, 111c under the situation of the narrowed width of peristome 20, because the width of peristome 20 is narrow, blocking wavelength 102 becomes below the transmission peak wavelength of colour filter film 21c of red (R).Its result in the peristome 20 under the colour filter film 21c of red (R), may be that the transmissivity of red light is minimum, and the light quantity that can arrive photoelectric conversion department 17 reduces, and might cause that sensitivity descends.Relate to solid photographic device of the present invention,, in peristome 20, formed high refractive index layer 125 in order to eliminate this unfavorable condition.By in peristome 20, adopting high refractive index layer 125, can make through the light wavelength in the peristome 20, with respect to the wavelength in the vacuum, be reduced to refractive index/one (1/ (refractive index=N)).For example, adopt the titanium oxide (TiO of refractive index 2.5 2) under the situation as high refractive index layer 125, the light wavelength that sees through in the peristome 20 is 1/2.5 wavelength with respect to the wavelength in the vacuum, is the red light wavelength of 650nm in a vacuum, becomes the wavelength of 260nm in peristome 20.Thereby for example in the peristome 20 of the A/F with 650nm, the red light wavelength of the 650nm in the vacuum becomes wavelength 260nm.Its result, the red light wavelength 260nm in the peristome 20 (650nm in a vacuum), 650nm is very little with respect to A/F, and red light can see through peristome 20 fully.
Under the situation of considering the blocking wavelength, the refractive indexes in the peristome 20 are 1, for example interdict wavelength and are converted into wavelength in the vacuum, and the blocking wavelength of the peristome 20 of 650nm A/F is by the titanium oxide (TiO with high index of refraction 2.5 2) to come to make in the landfill peristome 20 refractive indexes in the peristome 20 be 2.5, is converted into 2.5 times the 1625nm that blocking wavelength in the vacuum becomes 650nm.Therefore, the high-index material with refractive index=N in peristome 20 is filled, and the blocking wavelength that can enable to see through in the vacuum of peristome 20 enlarges N doubly, under the situation that A/F narrows down, also can make blocking wavelength 103 wideer than as seen as shown in Figure 9.That is to say, even under the situation that the width of peristome 20 reduces,, the blocking wavelength is moved to long wavelength side by adopting the high material of refractive index as the material in the filling opening portion 20, so can enlarge the transmission band of long wavelength side, the sensitivity that can improve long wavelength side.
And, identical by the width that makes the high-index material that is positioned at above-mentioned peristome 20 with the width of peristome 20, so, can realize maximum blocking wavelength.
And, illustration the titanium oxide of refractive index 2.5 as the high-index material that constitutes above-mentioned high refractive index layer 125.But, by making the refractive index in the peristome 20 is more than 1.8, under the width of peristome 20 is situation below the 1.0 μ m, also can make the transmittance of wavelength of long wavelength's sides such as near infrared light of near the light of the wavelength long wavelength in the visible light red and 1.0～2.0 μ m, so the high-index materials in the filling opening portion 20 if having more than 1.8, the high-index material of the refractive index more than 2.2 especially, just be not limited only to titanium oxide.
And the thickness 28 of high-index material shown in Figure 8 and the thickness of photomask 19 are that thickness 27 thickness 27 roughly the same or ratio open portion 20 of peristome 20 are big, and peristome 20 is fully by the high-index material landfill.Like this, can make the blocking wavelength of the peristome 20 that is converted into the wavelength in the vacuum move maximum,, the sensitivity of long wavelength side is improved so enlarge the transmission peak wavelength band of long wavelength side to long wavelength side.
Moreover, high-index material in the filling opening portion 20 is by adopting silicon nitride, titanium oxide, tantalum oxide, niobium oxide etc., compare with the refractive index (about 1.5) of the silica that generally is often used as insulating barrier, especially can increase refractive index, can make the blocking wavelength of the peristome 20 that is converted into the wavelength in the vacuum move maximum to long wavelength side, the transmission peak wavelength band of long wavelength side can be enlarged more, the sensitivity of long wavelength side can be further improved.
And, in the solid photographic device of this execution mode 1, illustration visible light as incident light, but also can affirm same effect to the near-infrared light wavelength, so can carry out the light of the frequency band below 1.0 μ m light-to-current inversion, that be equivalent to near-infrared wavelength for silicon, also can make the transmission frequency band of wavelength bigger, can realize significantly improving of sensitivity to the effect of long wavelength side expansion.
Figure 10 is the sectional view of formation method of light receiving unit 111a, 111b, the structure on the photomask 19 among the 111c of the solid photographic device of expression embodiment of the present invention 1.Figure 10 represent the solid photographic device of execution mode 1 light receiving unit 111a, 111b, 111c, the formation operation from the formation operation of peristome 20 to the interlayer film 29 of the top of photomask 19.
In this formation method, at first on photomask 19, form patterned resist.That is to say, on photomask 19, form resist, remove the resist in the zone that forms peristome 20.Then, utilizing dry etching technology is the part that mask is removed photomask 19 with the resist, forms the 1st operation (Figure 10 (a)) of the peristome 20 that is positioned at photoelectric conversion department 17 tops.
Then, carry out following operation continuously: form the 3rd operation (Figure 10 (c)) that makes the 2nd operation (Figure 10 (b)) of light transmissive high refractive index layer 125 and further form high refractive index layer 125 in peristome 20 and on the photomask 19 in peristome 20 and on the photomask 19.Like this, by carrying out the 2nd operation and the 3rd operation continuously, can finish the operation that itself makes high refractive index layer 125 planarizations on the peristome 20 with high refractive index layer 125.
At last, carry out in the 4th operation (Figure 10 (d)) of film 29 between cambium layer above the little photomask 19 of refractive index ratio high refractive index layer 125.
By carrying out above the 1st～the 4th operation, can form the structure on the photomask 19 of light receiving unit 111a, 111b, 111c of the solid photographic device of execution mode 1.As solid photographic device of the present invention, especially the width of peristome 20 hour, come with high-index material after the 2nd operation of landfill peristome 20, if continue to form high-index material, formed the high-index material of matrix in the part of peristome 20, the width of recess is reduced, and the sidewall about final recess contacts, and can make the high refractive index layer 125 of the structure that has an even surface.At this moment, in high-index material equably under the situation attached to the plane of photomask 19 and side, become more than 1/2 of width (d) of peristome 20, can make recess smooth by the thickness that makes high refractive index layer 125.High refractive index layer 125 is flattened, so can be formed flatly the surface of interlayer film 29 of the top of the photomask 19 that is positioned on the high refractive index layer 125, can save with CMP (chemico-mechanical polishing) etc. the operation that interlayer film 29 carries out planarization, perhaps can reduce polished amount, the time of CMP etc.
Under the situation of the solid photographic device of the big structure of the width (d) that should the formation method be applied to have in the past such peristome 20, the thickness (d/2) of high refractive index layer 125 that is used to eliminate above-mentioned recess is quite big, so the thickness of the high refractive index layer 125 when utilizing above-mentioned formation method to carry out planarization increases, produce the problem of optically focused difficulty.So this formation method is being that the situation of the narrow opening portion 20 below the 1.5 μ m is effective especially to the width (d) of peristome 20 in the practicality.
When utilizing above-mentioned formation method, aspect the characteristic of solid photographic device, can be easy to make high refractive index layer 125 planarizations on the peristome 20, so concavo-convex disappearance in interface between the interlayer film 29 above high refractive index layer 125 and the photomask 19, can not make light incide peristome 20, can improve sensitivity significantly and descend at the interface random reflected light.
In the formation method of Figure 10, form high refractive index layer 125 and make after the flattening surface, and then form the interlayer film 29 on the photomask 19, still, also can be after forming the 3rd operation of high-index material, append 5th operation of enforcement again by the planarization of the high refractive index layer 125 of CMP etc.Like this, can further reduce the diffuse reflection of the light at the interface between the interlayer film 29 above high refractive index layer 125 and the photomask 19, can greatly improve sensitivity and descend.And, the inhomogeneous of light quantity of inciding the peristome 20 of each light receiving unit can be minimized, it is inhomogeneous also can to improve sensitivity significantly.
(execution mode 2)
Figure 11 represents light receiving unit 211a, the 211b of the solid photographic device of embodiment of the present invention 2, the sectional view of 211c.The Semiconductor substrate 11 of each light receiving unit, light-to-current inversion layer 12 and insulating barrier 13 have the identical structure of structure in the light receiving unit with the past shown in Figure 3.
Metal level 214 is the same layers that comprise photomask 19 of the solid photographic device with the past.But in the solid photographic device of embodiments of the present invention 2, metal level 214 has high refractive index layer 225, and this high refractive index layer is that the mode with the peristome 20 of landfill photomask 19 forms after forming photomask 19, is made of high-index material.At this moment, high refractive index layer 225 is processed to the shape of the interior lens of layer of convex.Like this, the interlayer film 29 and the interior lens 30 of layer of the top of the photomask 19 that needs in the structure of solid photographic device in the past can be omitted in, the height of light receiving unit integral body can be reduced.
In the solid photographic device of this execution mode 2, incident light 24 sees through lenticule 23 and colour filter 15, do not see through layer interior lens 30 of solid photographic device in the past, directly utilize the interior lens of the layer that forms by high refractive index layer 225 to carry out optically focused, arrival photoelectric conversion department 17.Like this, the high refractive index layer 225 that is positioned at peristome 20 has the layer lens shape of convex, can be directly over peristome 20 optically focused, so, when the width of peristome 20 during, especially can increase substantially concentration ratio near the situation of visible wavelength.
Figure 12 is the sectional view of formation method of light receiving unit 211a, 211b, the structure on the photomask 19 among the 211c of the solid photographic device of expression embodiment of the present invention 2.Figure 12 represent among light receiving unit 211a, 211b, the 211c of the solid photographic device of execution mode 2 from the manufacturing process of peristome 20 to photomask 19 on the formation operation of interlayer film 31.
In this manufacture method, utilize the method identical to form the 1st of high refractive index layer 225～the 3rd operation (Figure 12 (a)～Figure 12 (c)) afterwards with the formation method of the solid photographic device of execution mode 1 shown in Figure 10, additional again the 4th～the 7th operation of utilizing established high refractive index layer 225 to come lens in the cambium layer itself is carried out then in the 8th operation of film 31 between cambium layer on the photomask 19.Below describe the 4th～the 8th operation in detail.
At first, carry out the 4th operation (Figure 12 (d)) of coating resist 32 on high refractive index layer 225.
Then, the 5th operation of exposing, developing makes the resist 32 residual (Figure 12 (e)) in the zone that does not form lens.
Then, carry out being shaped to lentiform the 6th operation (Figure 12 (f)) by heating residue resist 32.
Then, carry out resist 32 by corroding lens shape equably and high refractive index layer 225 and form the 7th operation (Figure 12 (g)) with lens in the layer of high refractive index layer 225.
At last, carry out in the 8th operation of film 31 (Figure 12 (h)) between cambium layer on the photomask 19.
As mentioned above, use the 4th～the 7th operation of lens in high refractive index layer 225 cambium layer, therefore can eliminate that lens reduce the operation of making solid photographic device with required special film formation process in the layer in the past, so the solid photographic device of low price can be provided.And because lens are positioned at the dead ahead of photomask 19 in the layer, even under the little situation of the width of peristome 20, also optically focused effectively can be realized high sensitivity.
(execution mode 3)
Figure 13 is light receiving unit 311a, the 311b of the solid photographic device of embodiment of the present invention 3, the sectional view of 311c.
The solid photographic device of this execution mode 3, the insulating barrier in insulating barrier 13, the metal level 114 equates that with the refractive index of lenticule 23 this point is different with the solid photographic device of execution mode 1.
In the solid photographic device of this execution mode 3, become following structure: the light receiving unit that the transmission peak wavelength of filter is long more, the insulating barrier in insulating barrier 13, the metal level 114 and the refractive index of lenticule 23 are big more, in the different light receiving unit of the transmission peak wavelength of filter, the insulating barrier in insulating barrier 13, the metal level 114 is different with the refractive index of lenticule 23.For example, in the transmission long wavelength's of filter light receiving unit, utilize a big material of refractive index to constitute insulating barrier and lenticule 23 in insulating barrier 13, the metal level 114, their refractive index is equated; In the light receiving unit of the transmitted wave length of filter, utilize a little material of refractive index to constitute insulating barrier and lenticule 23 in insulating barrier 13, the metal level 114, their refractive index is equated.Its result can suppress manufacturing cost.And, long wavelength's light can be gathered the little peristome of width, so, can improve the concentration ratio of long wavelength's light, can increase substantially the sensitivity of long wavelength's light being carried out the photoelectric conversion department of light-to-current inversion.
(execution mode 4)
Figure 14 is light receiving unit 411a, the 411b of the solid photographic device of embodiment of the present invention 4, the sectional view of 411c.The Semiconductor substrate 11 of each light receiving unit, light-to-current inversion layer 12, insulating barrier 13, metal level 14 and colour filter 15 except in metal level 14 not in the cambium layer the lens 30, have the roughly the same structure of structure with the solid photographic device in past shown in Figure 3.
The structure of the solid photographic device of this execution mode 4 is according to the transmission peak wavelength band of colour filter, to be formed in the refractive index difference of the material of the lenticule 423 that forms on the colour filter 15.
Under the situation of the miniaturization of light receiving unit development, the narrowed width of peristome 20.For example, under the width of peristome 20 is situation below the 2 μ m, be difficult to peristome 20 optically focused.Especially under the situation of red (R) colour filter film 21c that sees through the transmission peak wavelength band with long wavelength, it is well-known being difficult to optically focused.Therefore, in the solid photographic device of this execution mode 4,,, increase the refractive index of lenticule 423 along with the transmission peak wavelength band growth of colour filter in order to eliminate this undesirable condition.For example, utilize the silicon oxide film of refractive index 1.5 in the lenticule 423 on indigo plant (B) the colour filter film 21a of transmission peak wavelength band with short wavelength; Utilize the silicon nitride film of refractive index 2.0 in the lenticule 423 on the green colour filter film 21b of transmission peak wavelength band with middle wavelength; Utilize refractive index 2.5 oxidation titanium films in the lenticule 423 on red (R) of transmission peak wavelength band colour filter film 21c, realize along with the transmission peak wavelength band becomes the long wavelength and increases the structure of refractive index with long wavelength.Like this, can improve the concentration ratio of long wavelength's light, the sensitivity that can make light to the long wavelength carry out the photoelectric conversion department of light-to-current inversion increases substantially.
(execution mode 5)
Figure 15 is light receiving unit 511a, the 511b of the solid photographic device of embodiment of the present invention 5, the sectional view of 511c.
Each light receiving unit has: with Semiconductor substrate 11, light-to-current inversion layer 12, insulating barrier 13, metal level 14 and the colour filter 15 of the roughly the same structure of the light receiving unit in past shown in Figure 3.
The solid photographic device of this execution mode 5 has following structure: the lenticule 523 that forms on the colour filter 15 of each light receiving unit is made of low-index material 526 (for example silica of refractive index 1.5), refractive index ratio low-index material 526 big two kinds of materials of high-index material 525 (for example silicon nitride of refractive index 2.0).
In this solid photographic device, according to the transmission peak wavelength band difference of colour filter, the low-index material 526 in the lenticule 523 that forms on the colour filter 15 is different with the component ratio of high-index material 525.That is to say that along with the transmission peak wavelength band of colour filter is elongated, the volume ratio of the high-index material 525 of lenticule 523 increases.For example in the lenticule 523 on indigo plant (B) the colour filter film 21a of the transmission peak wavelength band with short wavelength, the volume ratio of low-index material 526 and high-index material 525 was made as 9: 1; In the lenticule 523 on green (G) of the transmission peak wavelength band with middle wavelength colour filter film 21b, the volume ratio of low-index material 526 and high-index material 525 was made as 4: 6; In the lenticule 523 on red (R) of transmission peak wavelength band colour filter film 21c with long wavelength, the volume ratio of low-index material 526 and high-index material 525 was made as 1: 9, and the volume ratio of making high-index material 525 becomes the long wavelength along with the transmission peak wavelength band and the structure that increases.Like this, can make be positioned at the transmission long wavelength with the colour filter of light on or under lenticular mean refractive index, than on the colour filter of the light of transmission short wavelength band or under lenticular mean refractive index big.Its result, the long wavelength that can improve the light harvesting difficulty with concentration ratio, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
(execution mode 6)
Figure 16 is light receiving unit 611a, the 611b of the solid photographic device of embodiment of the present invention 6, the sectional view of 611c.
Each light receiving unit has roughly the same Semiconductor substrate 11, light-to-current inversion layer 12, insulating barrier 13 and the colour filter 15 of structure with the light receiving unit in past shown in Figure 3.
The solid photographic device of this execution mode 6 has such structure, promptly, be formed with photomask 19, interlayer film 13,632 and the high index of refraction interlayer film 727 with peristome 20 in the metal level 614 under the colour filter 15 of each light receiving unit.
In this solid photographic device, under the different situation of the transmission peak wavelength band of colour filter, become the different structure of refractive index of the high index of refraction interlayer film 727 that is formed under the colour filter 15.That is to say the structure that the refractive index that becomes high index of refraction interlayer film 727 increases along with the transmission peak wavelength band lengthening of colour filter.For example, utilize the silicon oxide film of refractive index 1.5 in the high index of refraction interlayer film 727 under indigo plant (B) the colour filter film 21a of transmission peak wavelength band with short wavelength; Utilize the silicon nitride film of refractive index 2.0 in the high index of refraction interlayer film 727 under green (G) of transmission peak wavelength band colour filter film 21b with middle wavelength; Utilize the oxidation titanium film of refractive index 2.5 in the high index of refraction interlayer film 727 under red (R) of transmission peak wavelength band colour filter film 21c with long wavelength; Thereby the structure that realizes refractive index to become the long wavelength and increase along with the transmission peak wavelength band.
By adopting structure as described above, be positioned at see through the long wavelength with the chromatic color filter of light under the colour filter of light of refractive index ratio transmission short wavelength band of high index of refraction interlayer film 727 under the refractive index of high index of refraction interlayer film 727 big, therefore, even the light of the long wave band of optically focused difficulty is injected with bigger incident angle under the situation of light receiving unit, also can utilize high index of refraction interlayer film 727 to make the bendingof light of injecting with bigger incident angle inject photoelectric conversion department.Its result, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
And, in the solid photographic device of this execution mode 6, be made as high index of refraction interlayer film 727 and be positioned under the colour filter, but under the situation that high index of refraction interlayer film 727 is positioned on the colour filter, also have same effect.
(execution mode 7)
Figure 17 is light receiving unit 711a, the 711b of the solid photographic device of embodiment of the present invention 7, the sectional view of 711c.
The solid photographic device of this execution mode 7, the thickness of high index of refraction interlayer film 727 is different with the solid photographic device of execution mode 6 with the different this point of light receiving unit.
Structure in this solid photographic device is that under the different situation of the transmission peak wavelength band of colour filter, along with the transmission peak wavelength band lengthening of colour filter, the thickness of high index of refraction interlayer film 727 increases.For example, the thickness that will have a high index of refraction interlayer film 727 under short wavelength's indigo plant (B) the colour filter film 21a of transmission peak wavelength band is made as 300nm; The thickness that will have the high index of refraction interlayer film 727 under the green colour filter film 21b of transmission peak wavelength band of middle wavelength is made as 500nm; The thickness that will have the high index of refraction interlayer film 727 under red (R) colour filter film 21c of transmission peak wavelength band of long wavelength is made as 700nm, along with the transmission peak wavelength band becomes the long wavelength and realizes that the thickness of high index of refraction interlayer film 727 increases.
By adopting said structure, be positioned at see through the long wavelength with the colour filter of light under the Film Thickness Ratio of high index of refraction interlayer film 727 to see through the thickness of the high index of refraction interlayer film 727 under the colour filter of light of short wavelength band big, even therefore the long wavelength who is difficult to optically focused with light inject under the situation of light receiving unit with bigger incident angle, because high index of refraction interlayer film 727 is thicker, and the light of injecting with bigger incident angle is injected to the photoelectric conversion department bending.Its result, can increase substantially to the long wavelength with light carry out the sensitivity of the photoelectric conversion department of light-to-current inversion.
And, in the solid photographic device of this execution mode 7, the transmission peak wavelength band of colour filter to the different situation of each light receiving unit under, form transmission peak wavelength band lengthening, the structure that the thickness of high index of refraction interlayer film 727 increases and refractive index also increases along with colour filter; Even but refractive index is identical, the structure that only increases the thickness of high index of refraction interlayer film 727 also has same effect.
And in the solid photographic device of this execution mode 7, high index of refraction interlayer film 727 is positioned under the colour filter, but under the situation that high index of refraction interlayer film 727 is positioned on the colour filter, also has same effect.
(execution mode 8)
Figure 18 is light receiving unit 811a, the 811b of the solid photographic device of embodiment of the present invention 8, the sectional view of 811c.
The height of the lenticule 423 of the solid photographic device of this execution mode 8 is different with the solid photographic device of execution mode 4 because of the different this point of light receiving unit.
In the solid photographic device of this execution mode 8, to make under the different situation of the transmission peak wavelength band of colour filter, structure is the height difference of the lenticule 423 on colour filter 15.The height of lenticule 423 is elongated and increase along with colour filter transmission peak wavelength band.For example, the height that will have a lenticule 423 on short wavelength's indigo plant (B) the colour filter film 21a of transmission peak wavelength band is made as 1.0 μ m; The height that will have the lenticule 423 on green (G) colour filter film 21b of transmission peak wavelength band of middle wavelength is made as 1.2 μ m; The height that will have the lenticule 423 on red (R) colour filter film 21c of transmission peak wavelength band of long wavelength is made as 1.4 μ m, thereby the height of realizing lenticule 423 becomes the structure that the long wavelength increases with the transmission peak wavelength band.Like this, the concentration ratio of long wavelength light can be improved, the sensitivity of long wavelength light being carried out the photoelectric conversion department of light-to-current inversion can be increased substantially.
And, in the solid photographic device of this execution mode 8, formation is along with the incident angle to the light of light receiving unit increases and the structure that height increases and refractive index also increases of lenticule 423, but also has same effect in the structure that height identical in refractive index, only lenticule 423 increases.
(execution mode 9)
Figure 19 is light receiving unit 911a, the 911b of the solid photographic device of embodiment of the present invention 9, the sectional view of 911c.
The solid photographic device of this execution mode 9, for the light receiving unit of the colour filter film with identical transmission peak wavelength band, the insulating barrier in insulating barrier 13, the metal level 14 equates that with the refractive index of lenticule 423 this point is different with the solid photographic device of execution mode 4.For example for the light receiving unit of filter coating with identical transmission peak wavelength band, adopt a material to constitute insulating barrier and lenticule 423 in insulating barrier 13, the metal level 14, their refractive index is equated.Its result can suppress manufacturing cost.
And, adopt the formulate that the light gathering efficiency of each lenticule 423 can enough following (formula 1).
(formula 1)
s＝k×λ/NA (NA＝n·sinθ)
S: the expansion diameter of focal point
K: by the coefficient of image-forming condition decision
λ: wavelength
N: the refractive index of the medium under the lenticule
θ: lenticular stretching fillet (θ among Figure 19)
According to above-mentioned formula (formula 1), if coefficient k and lenticular stretching fillet θ are constant, then the expansion diameter s of focal point is directly proportional with wavelength X, is inversely proportional to refractive index n.So,, then, can make the expansion diameter s of focal point constant no matter want the light wavelength lambda of optically focused if change the refractive index n of lenticule 423 according to the light wavelength λ that wants optically focused.
For example, be conceived to red light and blue light.At this, the wavelength table of red light is shown " λ R", the wavelength table of blue light is shown " λ B", the refractive index of lenticule 423 that assemble the unit of red light is expressed as " n R", the refractive index of lenticule 423 of unit that assemble blue light is for " n B".Because the wavelength X of red light RThan blue light wavelength X BGreatly, by making n RCompare n BCan keep constant to the expansion diameter s of red light, blue focal point greatly.
And according to following formula (formula 1), the expansion diameter s of focal point reduces along with the increase of lenticule stretching fillet θ.Therefore, along with the increase of lenticular stretching fillet θ, if reduce refractive index n, then no matter lenticular stretching fillet θ can make the expansion diameter s of optical convergence constant.
(execution mode 10)
Figure 20 is the situation that expression is injected to the light of the solid photographic device (light receiving unit) of embodiment of the present invention 10.
As shown in figure 20, the chief ray of the light of injecting through camera lens 34, vertically inject the light receiving unit 1011 of central part A, but inject the light receiving unit 1011 of periphery B, C obliquely.
At this moment, in the solid photographic device of this execution mode 10, the refractive index of the lenticule 1023 of light receiving unit 1011 is difference along with the position of light receiving unit 1011, the refractive index of the lenticule 1023 of the periphery B that oblique light is injected, the light receiving unit of C 1011 is bigger than the refractive index of the lenticule 1023 of the light receiving unit 1011 of central part A.
Figure 21 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 10.
Each light receiving unit has: identical Semiconductor substrate 11, light-to-current inversion layer 12, insulating barrier 13, metal level 14 and the colour filter 15 of light receiving unit in structure and past shown in Figure 5.
The solid photographic device of this execution mode 10, the refractive index with the material that is formed on the colour filter 15 lenticule 1023 that forms are according to the incident angle of light and different structures.
Under the situation of the miniaturization of light receiving unit development, the narrowed width of peristome 20.For example, the width of peristome 20 is under the following situation of 1 μ m, is difficult to peristome 20 optically focused, especially is difficult to optically focused under to the big situation of the angle of light degree 33 of photoelectric conversion department 17, and this is well-known.Therefore, in the solid photographic device of this execution mode 10,,, increase the refractive index of the lenticule 1023 of light receiving unit along with the increase of incident angle 33 in order to eliminate this undesirable condition.For example, be the lenticule 1023 of the light receiving unit of the 0 central part A that spends for incident angle 33, utilize the silica of refractive index 1.5; For incident angle 33 is the lenticule 1023 of light receiving unit of the periphery C of 30 degree, and utilizing refractive index is 2.0 silicon nitride; Realized that the increase with incident angle 33 increases the structure of refractive index.Like this, the concentration ratio of the light in the big light receiving unit of incident angle 33 can be improved, the sensitivity of the big light receiving unit of incident angle 33 can be increased substantially.
(execution mode 11)
Figure 22 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 11.
Each light receiving unit has: identical Semiconductor substrate 11, light-to-current inversion layer 12, insulating barrier 13, metal level 14 and the colour filter 15 of light receiving unit in structure and past shown in Figure 5.
The structure of the solid photographic device of this execution mode 11 is, the lenticule 1123 of each light receiving unit is made of two kinds of materials of the big high-index material 1125 (for example silicon nitride of refractive index 2.0) of low-index material 1126 (for example silica of refractive index 1.5), refractive index ratio low-index material 1126.
In this solid photographic device, the low-index material 1126 in the lenticule 1123 and the volume ratio of high-index material 1125 are according to the incident angle 33 of light receiving unit and different.That is to say that in the light receiving unit that incident angle 33 increases, the low-index material 1126 of lenticule 1123 and the component ratio of high-index material 1125 are modified, the volume ratio of high-index material 1125 increases.For example, be the lenticule 1123 of the light receiving unit (being arranged in the light receiving unit of central part A) of 0 degree at incident angle, the volume ratio of low-index material 1126 and high-index material 1125 is 9: 1; At incident angle 33 is the lenticule 1123 of the light receiving unit (being arranged in the light receiving unit of periphery C) of 30 degree, and the volume ratio of low-index material 1126 and high-index material 1125 is 1: 9.Like this, the mean refractive index that can make the lenticule 1123 in the big light receiving unit of incident angle is bigger than the mean refractive index of the lenticule 1123 in the little light receiving unit of incident angle 33.Its result can improve the concentration ratio of the big light receiving unit of optically focused difficulty, incident angle 33, can increase substantially the sensitivity of the big light receiving unit of incident angle 33.
(execution mode 12)
Figure 23 is light receiving unit (being positioned at the light receiving unit of central part A, the periphery C) sectional view of the solid photographic device of embodiment of the present invention 12.
Each light receiving unit has roughly the same Semiconductor substrate 11, light-to-current inversion layer 12, insulating barrier 13 and the colour filter 15 of light receiving unit in structure and past shown in Figure 5.
In the solid photographic device of this execution mode 12, has the structure that has formed photomask 19, interlayer film 31,1232 and high index of refraction interlayer film 1227 in the metal level 1214 below the colour filter 15 of each light receiving unit with peristome 20.
In this solid photographic device, make under the different situation of the angle of light degree 33 of light receiving unit the different structure of refractive index of the high index of refraction interlayer film 1227 of light receiving unit.That is to say that the refractive index of making high index of refraction interlayer film 1227 is along with the angle of light degree 33 to light receiving unit increases and the structure of increase.For example, be the silicon oxide film that the high index of refraction interlayer film 1227 of light receiving unit of 0 degree utilizes refractive index 1.5 for angle of light degree 33 to light receiving unit; For the angle of light degree in light receiving unit 33 is the silicon nitride film that the 30 high index of refraction interlayer films 1227 of spending utilize refractive index 2.0; Therefore, can realize that the refractive index of high index of refraction interlayer film 1227 is along with angle of light degree 33 increases and the structure of increase.
Owing to adopt such structure, the refractive index of high index of refraction interlayer film 1227 that is positioned at the little light receiving unit of the refractive index ratio angle of light degree 33 of high index of refraction interlayer film 1227 of the big light receiving unit of angle of light degree 33 is big, so can increase substantially the sensitivity of the big light receiving unit of angle of light degree 33.
And in the solid photographic device of this execution mode 12, high index of refraction interlayer film 1227 is positioned under the colour filter, but also has same effect under the situation that high index of refraction interlayer film 1227 is positioned on the colour filter.
And in the solid photographic device of this execution mode 12, high index of refraction interlayer film 1227 is positioned on the photomask 19, but also has same effect under the situation that high index of refraction interlayer film 1227 is positioned under the photomask 19.
(execution mode 13)
Figure 24 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 13.
The solid photographic device of this execution mode 13, the thickness of high index of refraction interlayer film 1227 is different because of light receiving unit, and this point is different with the solid photographic device of execution mode 12.
In this solid photographic device, form such structure, promptly, under the different situation of the angle of light degree 33 of light receiving unit, the thickness difference of the high index of refraction interlayer film 1227 on the light receiving unit.That is to say that along with the angle of light degree 33 to light receiving unit increases, the thickness of high index of refraction interlayer film 1227 increases.For example, be that the thickness of high index of refraction interlayer film 1227 of the light receiving unit of 0 degree is 300nm to the angle of light degree 33 of light receiving unit; The thickness of high index of refraction interlayer film 1227 that to the angle of light degree 33 of light receiving unit is the light receiving units of 30 degree is 500nm, thereby has realized the structure that the thickness of high index of refraction interlayer film 1227 increases along with the increase of angle of light degree 33.
By adopting said structure, be positioned at the thickness of the high index of refraction interlayer film 1227 of the big light receiving unit of angle of light degree 33, the thickness of the high index of refraction interlayer film 1227 of the light receiving unit littler than angle of light degree 33 is big, so can increase substantially the sensitivity of the big light receiving unit of angle of light degree 33.
And, in the solid photographic device of this execution mode 13, angle of light degree 33 is because of under the different situation of each light receiving unit, make along with to the increase of the angle of light degree 33 of light receiving unit and the structure that thickness increases and refractive index also increases of high index of refraction interlayer film 1227, but, refractive index is identical, and the structure that only increases the thickness of high index of refraction interlayer film 1227 also has same effect.
And in the solid photographic device of this execution mode 13, high index of refraction interlayer film 1227 is positioned under the colour filter, but also has same effect under the situation that high index of refraction interlayer film 1227 is positioned on the colour filter.
Moreover in the solid photographic device of this execution mode 13, high index of refraction interlayer film 1227 is positioned on the photomask 19, but also has same effect under the situation that high index of refraction interlayer film 1227 is positioned under the photomask 19.
(execution mode 14)
Figure 25 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 14.
The height of the lenticule 1023 of the solid photographic device of this execution mode 14 is different because of light receiving unit, and this point is different with the solid photographic device of execution mode 10.
In the solid photographic device of this execution mode 14, be formed in the different structure of height of lenticule 1023 under the different situation of the angle of light degree 33 of light receiving unit.The height of lenticule 1023 increases with angle of light degree 33.For example, be that the height of the lenticule 1023 of 0 degree is established 1.0 μ m to the angle of light degree 33 of light receiving unit; The height of lenticule 1023 that to the angle of light degree 33 of light receiving unit is the light receiving units of 30 degree is made as 1.2 μ m; Thereby the structure that the height of realizing lenticule 1023 increases with angle of light degree 33.
By adopting said structure, be positioned at the height of the lenticule 1023 of the big light receiving unit of angle of light degree 33, than the height height of the lenticule 1023 that is positioned at the little light receiving unit of angle of light degree 33, so can increase substantially the sensitivity of the big light receiving unit of angle of light degree 33.
And in the solid photographic device of this execution mode 14, structure is along with the angle of light degree 33 to light receiving unit increases, the height of lenticule 1023 increases, and refractive index also increases, but refractive index is identical, and the structure that only increases the height of lenticule 1023 also has same effect.
(execution mode 15)
Figure 26 is the sectional view of the light receiving unit (being positioned at the light receiving unit of central part A, periphery C) of the solid photographic device of embodiment of the present invention 15.
The solid photographic device of this execution mode 15, for the light receiving unit of identical incident angle, the insulating barrier in insulating barrier 13, the metal level 14 and the refractive index of lenticule 1023 equate that this point is different with the solid photographic device of execution mode 10.For example,, utilize insulating barrier and lenticule 1023 in a material formation insulating barrier 13, the metal level 14, their refractive index is equated for the light receiving unit of identical incident angle.Its result can suppress manufacturing cost.
And, can enough following formulas (formula 2) expression by the light gathering efficiency of each lenticule 1023.
(formula 2)
s＝k×λ/NA (NA＝n·sinθ)
S: the expansion diameter of focal point
K: by the coefficient of image-forming condition decision
λ: wavelength
N: the refractive index of the medium under the lenticule
θ: lenticular stretching fillet (θ among Figure 26)
Under the identical situation of focal point diameter s, in the big photoelectric conversion department of the incidence angle of incident light, light is difficult to enter peristome.
At this moment, according to (formula 2) formula,, then can reduce expansion diameter s a little if increase refractive index n.Therefore, even in the big photoelectric conversion department of the incidence angle of incident light, also can make light enter photoelectric conversion department by increasing refractive index n.
(execution mode 16)
Figure 27 represents the cross section of light receiving unit A, the B (light receiving unit A, the B of Fig. 6) of the solid photographic device of embodiments of the present invention 16.Each light receiving unit has: comprise substrate 11, insulating barrier 13, metal level 14 and the colour filter 15 of light-to-current inversion layer 12, these structures with past shown in Figure 7 are identical.
In present embodiment 16, under the different situation of the A/F of light receiving unit 1, be formed on the refractive index difference of lenticule 123A, 123B on the colour filter 15.Realize at the solid photographic device different under the situation of wide dynamic range with A/F, in order to optimize the concentration ratio of the big light receiving unit A of little light receiving unit B of A/F and A/F simultaneously, make the refractive index that is formed on the lenticule 123B on the little light receiving unit B of A/F, bigger than the refractive index that is formed on the lenticule 123A on the big light receiving unit A of A/F.For example, be the lenticule 123A of the light receiving unit A of 2.5 μ m for the width of peristome 20A, utilize the silica of refractive index 1.5; Width for peristome 20B is the lenticule 123B of the light receiving unit B of 0.7 μ m, utilizes the silicon nitride of refractive index 2.0.
Like this, owing to the concentration ratio that can optimize the big light receiving unit A of little light receiving unit B of A/F and A/F simultaneously, so can increase substantially the sensitivity of light receiving unit with two A/Fs.And,,, have the effect of further raising sensitivity so can further improve concentration ratio owing to adopted refractive index with the structure that the incident angle of incident light increases.
(execution mode 17)
Figure 28 represents the light receiving unit A of the solid photographic device of embodiment of the present invention 17, the cross section of B.Each light receiving unit has: comprise substrate 11, insulating barrier 13, metal level 14 and the colour filter 15 of light-to-current inversion layer 12, these structures with past shown in Figure 7 are identical.
In this execution mode 17, lenticule 223A, the 223B of each light receiving unit is made of two kinds of materials of low-index material (for example silica of refractive index 1.5) 1326 and high-index material (for example silicon nitride of refractive index 2.0) 1325.
Under the different situation of the A/F of light receiving unit 1, in the big light receiving unit A of the little light receiving unit B of A/F and A/F, change lenticule 223A, the low-index material 1326 of 223B and the component ratio of high-index material 1325, in light receiving unit B, make the volume ratio of high-index material 1325 bigger than light receiving unit A.For example, in the lenticule 223A of the big light receiving unit A of A/F, the volume ratio that makes low-index material 1326 and high-index material 1325 is 9: 1; In the lenticule 223B of the little light receiving unit B of A/F, the volume ratio that makes low-index material 1326 and high-index material 1325 is 1: 9.
Its result can optimize the concentration ratio of the big light receiving unit A of little light receiving unit B of A/F and A/F, simultaneously so can increase substantially the sensitivity of the light receiving unit with 2 A/Fs.
And, will be to the mean refractive index of the lenticule 223B of the big light of incident angle, the mean refractive index of lenticule 223A that is made as the little light of comparison incident angle is big.Like this, no matter the incident angle of light can make the concentration ratio of each light receiving unit equate.
(execution mode 18)
Figure 29 represents the light receiving unit A of the solid photographic device of embodiment of the present invention 18, the cross section of B.Each light receiving unit has substrate 11, insulating barrier 13 and the colour filter 15 that comprises light-to-current inversion layer 12, and these structures with past shown in Figure 7 are identical.
In this execution mode 18, be provided with high index of refraction interlayer film 27A, 27B and interlayer film 1332 in the metal level 1440 under the colour filter 15 of each light receiving unit 1.
Become such structure, promptly, high index of refraction interlayer film 27A on light receiving unit 1 under the different situation of the A/F of light receiving unit 1, the refractive index difference of 27B, in the little light receiving unit B of A/F, the light receiving unit A big with A/F compares, and increases the refractive index of high index of refraction interlayer film 27B.For example, for the high index of refraction interlayer film 27A of the big light receiving unit A of A/F, utilize the silicon oxide film of refractive index 1.5; For the high index of refraction interlayer film 27B of the little light receiving unit B of A/F, utilize the silicon nitride film of refractive index 2.0.And, the structure that has adopted refractive index to increase with angle of light degree 1333.
Its result, owing to the concentration ratio that can optimize the big light receiving unit A of little light receiving unit B of A/F and A/F simultaneously, so, can increase substantially the sensitivity of light receiving unit with 2 A/Fs.
Represented that in execution mode 18 high index of refraction interlayer film 27A, 27B are positioned at the embodiment under the colour filter 15, but high index of refraction interlayer film 27A, 27B can be positioned at also on the colour filter 15, also can obtain same effect under this situation.
And, in execution mode 18, express high index of refraction interlayer film 27A, 27B and be positioned at the embodiment on the photomask 19, but also can be that high index of refraction interlayer film 27A, 27B are positioned at photomask 19 times, also can obtain same effect under this situation.
(execution mode 19)
Figure 30 represents the light receiving unit A of the solid photographic device of embodiment of the present invention 19, the cross section of B.Execution mode 19 is that with the different of execution mode 18 in execution mode 19, the thickness of high index of refraction interlayer film 270A, the 270B of the metal level 1541 under the colour filter 15 is different because of light receiving unit.
Under the different situation of the A/F of light receiving unit 1, form the high index of refraction interlayer film 270A on the light receiving unit 1, the different structure of thickness of 270B, make the thickness of the high index of refraction interlayer film 270B of the little light receiving unit B of A/F, the thickness of the high index of refraction interlayer film 270A of the light receiving unit A that the ratio open width is big is thick.For example, the thickness of the high index of refraction interlayer film 270A of the light receiving unit A that A/F is big is made as 300nm; The thickness of the high index of refraction interlayer film 270B of the light receiving unit B that A/F is little is made as 500nm.And the thickness that adopts high index of refraction interlayer film 270A, 270B is along with angle of light degree 1333 increases and the structure of increase.
Its result can optimize the concentration ratio of the big light receiving unit A of little light receiving unit B of A/F and A/F, simultaneously so can increase substantially the sensitivity of the light receiving unit with 2 A/Fs.
In execution mode 19, under the different situation of angle of light degree 1333,, the thickness of high index of refraction interlayer film 270A, 270B is increased, and refractive index is also increased along with incident angle 1333 increases.But, also can be that refractive index is identical, only change the thickness of high index of refraction interlayer film 270A, 270B, also can obtain same effect under this situation.
And, in execution mode 19, express high index of refraction interlayer film 270A, 270B and be positioned at the embodiment under the colour filter 15, but high index of refraction interlayer film 270A, 270B also can be positioned on the colour filter 15, also can obtain identical effect under this situation.
Moreover, represented that in execution mode 19 high index of refraction interlayer film 270A, 270B are positioned at the embodiment on the photomask 19, but high index of refraction interlayer film 270A, 270B also can be positioned at photomask 19 times, also can obtain same effect under this situation.
(execution mode 20)
Figure 31 represents the light receiving unit A of the solid photographic device of embodiment of the present invention 20, the cross section of B.Each light receiving unit has: comprise substrate 11, insulating barrier 13, metal level 14 and the colour filter 15 of light-to-current inversion layer 12, these structures with past shown in Figure 7 are identical.
In this execution mode 20, under the different situation of peristome width, the height difference of lenticule 523A, 523B, the height of the lenticule 523B of the light receiving unit B that A/F is little, the lenticule 523A height of the light receiving unit A that the ratio open width is big.For example, the height of the lenticule 523A of the light receiving unit A that A/F is big is made as 1.0 μ m; The height of the lenticule 523B of the light receiving unit B that A/F is little is made as 1.2 μ m.
Its result can optimize the concentration ratio of the big light receiving unit A of little light receiving unit B of A/F and A/F, simultaneously so can increase substantially the sensitivity of the light receiving unit with 2 A/Fs.
(execution mode 21)
Figure 32 represents the light receiving unit A of the solid photographic device of embodiment of the present invention 21, the cross section of B.Each light receiving unit has: comprise insulating barrier and colour filter 15 in the substrate 11, insulating barrier 13, metal level 14 of light-to-current inversion layer 12, these structures with past shown in Figure 7 are identical.
In this execution mode 21, the light receiving unit A that light receiving unit B that A/F is little and A/F are big has the structure that the refractive index of insulating barrier in insulating barrier 13, the metal level 14 and lenticule 623A, 623B equates respectively.For example, utilize a material to constitute insulating barrier and lenticule 623A, 623B in insulating barrier 13, the metal level 14, their refractive index is equated each light receiving unit.
And, by each lenticular light gathering efficiency, can enough following (formula 3) formula represent.
(formula 3)
s＝k×λ/NA (NA＝n·sinθ)
S: the expansion diameter of focal point
K: by the coefficient of image-forming condition decision
λ: wavelength
N: the refractive index of the medium under the lenticule
θ: lenticular stretching fillet (θ among Figure 32)
According to above-mentioned (formula 3) formula, the expansion diameter s and the refractive index n of focal point are inversely proportional to.A compares with light receiving unit, and the A/F of light receiving unit B is little, so compare with light receiving unit A, must reduce the expansion diameter s of the point that the light of light receiving unit B assembles.A compares with light receiving unit, if increase the lenticular refractive index n of light receiving unit B, just can make the expansion diameter s of focal point of light receiving unit B littler than light receiving unit A.
More than, according to execution mode solid photographic device of the present invention has been described, but the present invention is not limited to this execution mode.In the scope that does not break away from purport of the present invention, those skilled in the art manage to implement in being also contained in of the various distortion scope of the present invention.
For example, also can utilize the solid photographic device of above-mentioned execution mode to constitute camera.
And, though employing silica etc., just are not limited thereto if refractive index ratio generally is commonly used for the big material of refractive index of the silicon oxide film of insulating barrier as the material that constitutes lenticule or high index of refraction interlayer film, for example, also can be titanium oxide, tantalum oxide, niobium oxide or hafnium oxide etc.
Utilizability on the industry
The present invention can be used in solid photographic device etc., especially can be used for digital camera and number Use in the solid photographic device of code video camera etc.

Claims (24)

1. solid photographic device is characterized in that having:
Semiconductor substrate;
Photoelectric conversion department is formed on the above-mentioned Semiconductor substrate;
Photomask is provided with the peristome that is positioned at above-mentioned photoelectric conversion department top and forms, and is arranged on the above-mentioned Semiconductor substrate; And
High refractive index layer is formed in the above-mentioned peristome.
2. solid photographic device as claimed in claim 1 is characterized in that,
The A/F of above-mentioned peristome is littler than the maximum wavelength that is converted into the vacuum medium wavelength of the light of injecting above-mentioned photoelectric conversion department by above-mentioned peristome,
Above-mentioned high refractive index layer is made of high-index material, and this high-index material has makes the refractive index of injecting light transmission light, above-mentioned maximum wavelength of above-mentioned photoelectric conversion department by above-mentioned peristome.
3. solid photographic device as claimed in claim 1 is characterized in that,
In above-mentioned peristome, be filled with above-mentioned high refractive index layer.
4. solid photographic device as claimed in claim 1 is characterized in that,
Above-mentioned high refractive index layer is made of the high-index material with the refractive index more than 1.8.
5. solid photographic device as claimed in claim 1 is characterized in that,
The thickness of above-mentioned high refractive index layer and the thickness of above-mentioned photomask about equally, perhaps the thickness than above-mentioned photomask is thick.
6. solid photographic device as claimed in claim 1 is characterized in that,
Above-mentioned high refractive index layer has convex lens shape, assembles the light of injecting above-mentioned photoelectric conversion department by above-mentioned peristome.
7. solid photographic device as claimed in claim 1 is characterized in that,
Above-mentioned high-index material is any in oxidation phthalein, tantalum oxide and the niobium oxide.
8. solid photographic device as claimed in claim 1 is characterized in that,
Above-mentioned A/F is smaller or equal to 1.0 μ m.
9. solid photographic device as claimed in claim 1 is characterized in that,
Above-mentioned solid photographic device also has filter coating, and this filter coating is arranged on the above-mentioned photomask in the mode that is positioned at above-mentioned peristome top, makes the light transmission of certain wavelengths band;
The A/F of above-mentioned peristome is littler than the above-mentioned maximum wavelength of the light that above-mentioned filter coating sees through.
10. a video camera has solid photographic device, it is characterized in that,
Above-mentioned solid photographic device has:
Semiconductor substrate;
Photoelectric conversion department is formed on the above-mentioned Semiconductor substrate;
Photomask is provided with the peristome that is positioned at above-mentioned photoelectric conversion department top and forms, and is arranged on the above-mentioned Semiconductor substrate; And
High refractive index layer is formed in the above-mentioned peristome;
The A/F of above-mentioned peristome is littler than the maximum wavelength that is converted into the vacuum medium wavelength of the light of injecting above-mentioned photoelectric conversion department by above-mentioned peristome,
Above-mentioned high refractive index layer is made of high-index material, and this high-index material has makes the refractive index of injecting light transmission light, above-mentioned maximum wavelength of above-mentioned photoelectric conversion department by above-mentioned peristome.
11. the manufacture method of a solid photographic device is characterized in that, comprising:
Peristome forms operation, forms photomask being formed with on the Semiconductor substrate of photoelectric conversion department, forms the peristome that is positioned at above the above-mentioned photoelectric conversion department in above-mentioned photomask; And
High refractive index layer forms operation, forms high refractive index layer in above-mentioned peristome He on the above-mentioned photomask;
Form in the operation at above-mentioned high refractive index layer, form the above-mentioned high refractive index layer that has an even surface that thickness makes above-mentioned high refractive index layer.
12. the manufacture method of solid photographic device as claimed in claim 11 is characterized in that,
Form in the operation at above-mentioned high refractive index layer, form 1/2 the above-mentioned high refractive index layer of thickness more than or equal to the width of above-mentioned peristome.
13. the manufacture method of solid photographic device as claimed in claim 11 is characterized in that,
The manufacture method of above-mentioned solid photographic device also comprises the planarization operation of the surface of above-mentioned high refractive index layer being carried out planarization.
14. the manufacture method of solid photographic device as claimed in claim 10 is characterized in that,
The manufacture method of above-mentioned solid photographic device comprises that also the above-mentioned high refractive index layer that will be positioned at the peristome top is processed into the lens formation operation of convex lens shape.
15. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate;
A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And
Colour filter is arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes;
Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the filter coating that the 2nd photoelectric conversion department is positioned at than above-mentioned the 1st photoelectric conversion department top sees through the more below of the filter coating of long wavelength's light;
Be positioned at the above-mentioned lenticular refractive index of above-mentioned the 2nd photoelectric conversion department top, bigger than the above-mentioned lenticular refractive index that is positioned at above-mentioned the 1st photoelectric conversion department top.
16. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate;
A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And
Colour filter is arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes;
Above-mentioned lenticule is made of low-index material and high-index material;
Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the filter coating that the 2nd photoelectric conversion department is positioned at than above-mentioned the 1st photoelectric conversion department top sees through the more filter coating below of long wavelength light;
Be arranged in the volume of the high-index material that the above-mentioned lenticule of above-mentioned the 2nd photoelectric conversion department top comprises, the volume of the high-index material that comprises than the above-mentioned lenticule that is arranged in above-mentioned the 1st photoelectric conversion department top is big.
17. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate;
High refractive index film is arranged on the above-mentioned Semiconductor substrate; And
Colour filter is arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top, and the different filter coating of transmission peak wavelength band is configured to 2 dimension shapes;
Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is positioned at than the filter coating of above-mentioned the 1st photoelectric conversion department top, sees through the more below of the filter coating of long wavelength's light;
Be positioned at the refractive index of the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, bigger than the refractive index of the above-mentioned high refractive index film that is positioned at above-mentioned the 1st photoelectric conversion department top.
18. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And
A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding above-mentioned each photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top; And
Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department;
Be positioned at the above-mentioned lenticular refractive index of above-mentioned the 2nd photoelectric conversion department top, bigger than the above-mentioned lenticular refractive index that is positioned at above-mentioned the 1st photoelectric conversion department top.
19. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And
A plurality of lenticules are arranged on the above-mentioned Semiconductor substrate, and corresponding each above-mentioned photoelectric conversion department is positioned at above-mentioned photoelectric conversion department top;
Above-mentioned lenticule is made of low-index material and high-index material;
Have the 1st photoelectric conversion department and the 2nd photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, the 2nd photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department
Be arranged in the volume of the high-index material that the above-mentioned lenticule of above-mentioned the 2nd photoelectric conversion department top comprises, the volume of the high-index material that comprises than the above-mentioned lenticule that is arranged in above-mentioned the 1st photoelectric conversion department top is big.
20. a solid photographic device is characterized in that having:
Semiconductor substrate;
A plurality of photoelectric conversion departments are formed on the above-mentioned Semiconductor substrate; And
High refractive index film is arranged on the above-mentioned Semiconductor substrate;
Have the 1st photoelectric conversion department and second photoelectric conversion department in above-mentioned a plurality of photoelectric conversion departments, this second photoelectric conversion department is injected light with the incidence angle bigger than the incidence angle of the light of injecting above-mentioned the 1st photoelectric conversion department;
Be positioned at the refractive index of the above-mentioned high refractive index film of above-mentioned the 2nd photoelectric conversion department top, bigger than the refractive index of the above-mentioned high refractive index film that is positioned at above-mentioned the 1st photoelectric conversion department top.
21. a solid photographic device is characterized in that,
On Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, have lenticule,
In a plurality of above-mentioned light receiving units, there is the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger than above-mentioned the 1st A/F;
The lenticular refractive index of above-mentioned the 2nd light receiving unit of lenticular refractive index ratio of above-mentioned the 1st light receiving unit is big.
22. a solid photographic device is characterized in that,
On Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, have lenticule,
In a plurality of above-mentioned light receiving units, there is the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger than above-mentioned the 1st A/F, the lenticule of the lenticule of above-mentioned the 1st light receiving unit and above-mentioned the 2nd light receiving unit, at least formed by low-index material and high-index material respectively, the volume of the high-index material that comprises in the lenticule of above-mentioned the 2nd light receiving unit of the volume ratio of the high-index material that comprises in the lenticule of above-mentioned the 1st light receiving unit is big.
23. a solid photographic device is characterized in that,
On Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, have lenticule,
In a plurality of above-mentioned light receiving units, there is the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger than above-mentioned the 1st A/F, have and be configured in the 1st high index of refraction interlayer film on above-mentioned the 1st light receiving unit and be configured in the 2nd high index of refraction interlayer film on above-mentioned the 2nd light receiving unit, the refractive index of above-mentioned the 2nd high index of refraction interlayer film of the refractive index ratio of above-mentioned the 1st high index of refraction interlayer film is big.
24. a solid photographic device is characterized in that,
On Semiconductor substrate, be formed with and have a plurality of light receiving units that generate the photoelectric conversion department of signal charge according to the brightness of incident light, on above-mentioned photoelectric conversion department, have lenticule,
In a plurality of above-mentioned light receiving units, there are the 2nd light receiving unit that has the 1st light receiving unit of the 1st A/F and have 2nd A/F bigger, the lenticular height height of above-mentioned the 2nd light receiving unit of lenticular aspect ratio of above-mentioned the 1st light receiving unit than above-mentioned the 1st A/F.
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