CN1828850A - Thin film transistor and manufacturing method thereof - Google Patents
Thin film transistor and manufacturing method thereof Download PDFInfo
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- CN1828850A CN1828850A CN 200610006016 CN200610006016A CN1828850A CN 1828850 A CN1828850 A CN 1828850A CN 200610006016 CN200610006016 CN 200610006016 CN 200610006016 A CN200610006016 A CN 200610006016A CN 1828850 A CN1828850 A CN 1828850A
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Abstract
A thin film transistor includes a gate, an insulating layer, a channel layer, etching stop layer, an ohmic contact layer, a source and a drain. It contains said gate set on a substrate, insulating layer set on substrate and covering gate, channel layer set on partial insulating layer and corresponding gate, channel layer width less than or equal to less than or equal to gate width, etching stop layer set on partial channel layer and corresponding gate, etching stop layer width less than channel layer width, layer set on partial insulating layer and covering etching stop layer two ends channel layer two ends, source and drain set on ohmic contact layer for electrically connected with two ends through ohmic contact layer.
Description
Technical field
The present invention relates to a kind of thin-film transistor and manufacture method thereof, the scope that particularly relates to a kind of channel layer is recessed in the interior thin-film transistor and the manufacture method thereof of scope of grid.
Background technology
Because active-matrix Thin Film Transistor-LCD (Active matrix TFT-LCD, AMLCD) has characteristic advantages such as frivolous, has replaced conventional cathode ray tube (cathode raytube, CRT) display at present gradually.And its size of AM LCD is also cumulative with day with the demand that shows image quality, along with the resolution of LCD promotes, the number of its scan line also with increase.Show under the time (frame time) in same frame, every scan line (scan line) the selecteed time also is shortened, so (thin film transistor, the requirement of switching characteristic TFT) is just healed and is become strict for thin-film transistor in each pixel.Structure as for traditional thin-film transistor is as follows at this description of drawings.
Please refer to Fig. 1, it illustrates is the section of structure of traditional thin-film transistor.In Fig. 1, thin-film transistor 10 comprises a grid 12, an insulating barrier 13, an amorphous silicon (amorphous silicon, a-Si) channel layer 14, an etch stop 15, a heavy doping N type (N+) layer 16, one source pole 17 and a drain electrode 18.Grid 12 is arranged on the glass substrate 11 of part, and insulating barrier 13 is covered in the grid 12 on the glass substrate 11.Amorphous silicon channel layer 14 covers insulating barrier 13, and its scope is greater than the scope of grid 12.Etch stop 15 is arranged on the central area of amorphous silicon channel layer 14, and corresponding to grid 12.N+ layer 16 covers two ends of etch stop 15 and the amorphous silicon channel layer 14 of part.Source electrode 17 and draining 18 is arranged on the N+ layer 16, in order to be electrically connected with two ends of amorphous silicon channel layer 14.
When thin-film transistor 10 is opened and at source electrode 17 and drain electric current I is arranged between 18
DSDuring conducting, electric current I
DSNecessary through two the high value end Rps of amorphous silicon channel layer 14 corresponding to source electrode 17 and drain electrode, and amorphous silicon channel layer 14 is corresponding to the low resistance end R of grid 12
CHYet these two extra high value end Rp will cause source electrode 17 to flow to the electric current I of drain electrode 18 via amorphous silicon channel layer 14
DSDescend, influence the running performance of thin-film transistor 10.
In addition, the amorphous silicon in the amorphous silicon channel layer 14 is a kind of photaesthesia material, because the scope of amorphous silicon channel layer 14 greater than the scope of grid 12, causes the amorphous silicon channel layer 14 of part still to be arrived by illumination when thin-film transistor 10 opens or cuts out.Especially close and source electrode 17 and draining when not having current lead-through between 18 at thin-film transistor 10, behind amorphous silicon channel layer 14 irradiations of part,, and the shortcoming of light electric leakage is arranged easily in source electrode 17 and drain and produce photoelectric current between 18.
Summary of the invention
In view of this, purpose of the present invention is exactly in thin-film transistor that a kind of novelty is provided and manufacture method thereof.Its scope with channel layer is recessed in the design in the scope of grid, not only can eliminate high value end extra in the channel layer and increases the conducting electric current, more can reduce the generation of photoelectric current and solves the shortcoming of light electric leakage.Thus, promote the running performance of thin-film transistor widely.
According to purpose of the present invention, a kind of thin-film transistor is proposed, comprise a grid, an insulating barrier, a channel layer, an etch stop, an ohmic contact layer, one source pole and a drain electrode.Grid is arranged on the substrate.Insulating barrier is arranged on the substrate, and cover gate.Channel layer is arranged on the partial insulating layer, and corresponding to grid, and the width of channel layer is less than or equal to the width of grid.Etch stop is arranged on the channel layer of part, and corresponding to grid, and the width of etch stop is less than the width of channel layer.Ohmic contact layer is arranged on the partial insulating layer, and covers two ends of etch stop and two ends of channel layer.Source electrode and drain electrode are arranged on the ohmic contact layer, are electrically connected with two ends of channel layer in order to see through ohmic contact layer accordingly.
According to another object of the present invention, a kind of method of manufacturing thin film transistor is proposed.At first, form a grid on a substrate.Then, form an insulating barrier on substrate, and cover gate.Then, form a channel material layer, an etch stop material layer and a photoresist layer in regular turn on insulating barrier.Then, this photoresist layer of patterning is in order to form a patterning photoresist layer.Patterning photoresist layer is corresponding to grid, and the width of patterning photoresist layer is less than or equal to the width of grid.Then, remove the etch stop material layer of part, to form an etch stop.Etch stop is corresponding to grid, and the width of etch stop is less than the width of grid.Then, remove the channel material layer of part, to form a channel layer.Channel layer is corresponding to grid, and the width of channel layer is less than or equal to the width of grid.Then, remove this patterning photoresist layer.Then, form an ohmic contact layer in regular turn, one source pole and drains on insulating barrier.Ohmic contact layer covers two ends of etch stop and two ends of channel layer, and source electrode and drain electrode see through ohmic contact layer accordingly and be electrically connected with two ends of channel layer.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
It is the section of structure of traditional thin-film transistor that Fig. 1 illustrates;
It is section of structure according to the thin-film transistor of embodiments of the invention one that Fig. 2 illustrates;
It is section of structure according to the thin-film transistor of embodiments of the invention two that Fig. 3 illustrates;
It is flow chart according to the method for manufacturing thin film transistor of embodiments of the invention three that Fig. 4 illustrates;
It is process section according to the thin-film transistor of embodiments of the invention three that Fig. 5 A～5L illustrates;
It is process section according to the another kind of patterning first photoresist layer of the present invention that Fig. 6 illustrates; And
It is another kind of to form ohmic contact layer, source electrode and the process section on insulating barrier of draining according to of the present invention that Fig. 7 A～7F illustrates.
The simple symbol explanation
10,20,30: thin-film transistor
11: glass substrate
21: substrate
22: grid
13,23: insulating barrier
14: the amorphous silicon channel layer
15,25: etch stop
The 16:N+ layer
17,27: source electrode
18,28: drain electrode
24: channel layer
24a: channel material layer
25a: etch stop material layer
26,36: ohmic contact layer
26a: ohmic contact material layer
26b: patterning ohmic contact layer
27a: metal level
27b: patterned metal layer
36a: ohmic contact layer for the first time
36b: ohmic contact layer for the second time
51: the first photoresist layers
51a: the first patterning photoresist layer
52: the second photoresist layers
52a, 82a: the second patterning photoresist layer
52b: first partly
52c: second partly
52d: the 3rd partly
52e, 82b: the 3rd patterning photoresist layer
52f, 82c: opening
53: the half-penetration type photomask
53a: the 3rd transparent area
53b: first transparent area
53c: second transparent area
71,81: photomask
83: laser
I
DS: electric current
Rp: high value end
R
CH: the low resistance end
X: second distance
Y: first distance
Embodiment
Embodiment one
Please refer to Fig. 2, it illustrates is section of structure according to the thin-film transistor of embodiments of the invention one.In Fig. 2, thin-film transistor 20 comprises a grid 22, an insulating barrier 23, a channel layer 24, an etch stop 25, an ohmic contact layer 26, one source pole 27 and a drain electrode 28.Grid 22 is arranged on the substrate 21.Insulating barrier 23 is arranged on the substrate 21, and cover gate 22.Channel layer 24 is arranged on the partial insulating layer 23, and corresponding to grid 22, and the width of channel layer 24 is less than or equal to the width of grid 22.Etch stop 25 is arranged on the channel layer 24 of part, and corresponding to grid 22, and the width of etch stop 25 is less than the width of channel layer 24.Ohmic contact layer 26 is arranged on the partial insulating layer 23, and covers two ends of etch stop 25 and two ends of channel layer 24.Source electrode 27 and draining 28 is arranged on the ohmic contact layer 26, is electrically connected with two ends of channel layer 24 in order to see through ohmic contact layer 26 accordingly.
Present embodiment is recessed in the scope of channel layer 24 design in the scope of grid 22 in thin-film transistor 20, not only can eliminate high value end extra in the channel layer 20 and increase the conducting electric current, more can reduce the generation of photoelectric current and solve the shortcoming of light electric leakage.Thus, promote the running performance of thin-film transistor 20 widely.
In the present embodiment, etch stop 25 is arranged on the central area of channel layer 24, and the side of channel layer 24 is between the side of the side of etch stop 25 and gate pole 24.In addition, the side of the side of etch stop 25 and grid 22 one first distance Y of being separated by, the value of Y is substantially 1～2 micron (μ m).In addition, the side of the side of etch stop 25 and the channel layer 24 second distance X of being separated by, the value of X is substantially 800 dusts ().Moreover greater than the thickness of channel layer 24, for example the thickness of etch stop 25 and channel layer 24 is respectively 1000 dusts () and 500 dusts () to the thickness of etch stop 25 substantially.
The present embodiment the technical staff in the technical field can also understand that the technology of present embodiment is not confined to this.For example, substrate 21 comprises insulated substrate, glass substrate, ceramic substrate, and plastic base or flexible base plate, channel layer 24 comprise amorphous silicon (amorphous silicon, a-Si) layer or polysilicon (polysilicon, poly-Si) layer.In addition, insulating barrier 23 comprises silicon nitride, silicon oxynitride, silica or its combination, and can be the single or multiple lift structure.In addition, etch stop 25 comprises silicon nitride, silicon oxynitride, silica or its combination, and can be the single or multiple lift structure.Moreover, grid 21, source electrode 27 and drain and 28 comprise metal, metal alloy or its combination, and can be the single or multiple lift structure.Again, ohmic contact layer 26 comprises N type doped silicon layer or P type doped silicon layer, for example is heavy doping N type (N+) layer.
Embodiment two
Please refer to Fig. 3, it illustrates is section of structure according to the thin-film transistor of embodiments of the invention two.The thin-film transistor 30 of present embodiment is ohmic contact layer 36 with thin-film transistor 20 differences of embodiment one, and all the other identical constitutive requirements continue to continue to use label, and repeat no more its connection relationship each other.
In Fig. 3, ohmic contact layer 36 comprises the ohmic contact first time (first sub-ohmic contact) layer 36a and an ohmic contact (second sub-ohmic contact) layer 36b for the second time, two ends of the etch stop 25 of ohmic contact layer 36b covering for the second time, two ends and the partial insulating layer 23 of channel layer 24.Ohmic contact layer 36a covers ohmic contact layer 36b for the second time for the first time, the source electrode 27 and the 28 coverings ohmic contact layer 36a for the first time that drains.Wherein, for the first time the doping content of ohmic contact layer 36a greater than the doping content of the ohmic contact layer 36b second time.
The present embodiment the technical staff in the technical field can also understand that the technology of present embodiment is not confined to this.For example, for the first time ohmic contact layer 36a and for the second time ohmic contact layer 36b can be respectively N+ layer and light dope N type (N-) layer.Or, for the first time ohmic contact layer 36a and for the second time ohmic contact layer 36b can be respectively P+ layer and P-layer.In addition, for the first time ohmic contact layer 36a and for the second time ohmic contact layer 36b can be respectively one the one N+ layer and one the 2nd N+ layer, the doping content of a N+ is greater than the doping content of the 2nd N+.Or, for the first time ohmic contact layer 36a and for the second time ohmic contact layer 36b can be respectively one the one P+ layer and one the 2nd P+ layer, the doping content of a P+ layer is greater than the doping content of the 2nd P+ layer.
Embodiment three
Please be simultaneously with reference to Fig. 4～5L, it is flow chart according to the method for manufacturing thin film transistor of embodiments of the invention three that Fig. 4 illustrates, it is process section according to the thin-film transistor of embodiments of the invention three that Fig. 5 A～5L illustrates.Please also refer to Fig. 2～3, in Fig. 4, at first in step 41, form a grid 22 on a substrate 21.Shown in Fig. 5 A, the substrate 21 of grid 22 cover parts, and grid 22 comprises metal, metal alloy or its combination, and can be the single or multiple lift structure.Substrate 21 comprises insulated substrate, glass substrate, ceramic substrate, plastic base or flexible base plate.
Then, enter in the step 42, form an insulating barrier 23 on substrate 21, and cover gate 22.Shown in 5B figure, the substrate 21 of insulating barrier 23 cover gate 22 and part, and insulating barrier 23 comprises silicon nitride, silicon oxynitride, silica or its combination, and can be the single or multiple lift structure.
Then, enter in the step 43, form a channel material layer 24a, an etch stop material layer 25a and one first photoresist layer 51 in regular turn on insulating barrier 23.And for example shown in Fig. 5 B, channel material layer 24a comprises amorphous silicon or polysilicon, and etch stop material layer 25a comprises silicon nitride, silicon oxynitride, silica or its combination, and can be the single or multiple lift structure.Moreover the thickness of etch stop material layer 25a is substantially greater than the thickness of channel material layer 24a.
Then, enter in the step 44, the patterning first photoresist layer 51 is to form one first patterning photoresist layer 51a.Shown in Fig. 5 C, the first patterning photoresist layer 51a is corresponding to grid 22, and the width of the first patterning photoresist layer 51a is less than or equal to the width of grid 22.In forming the step of the first patterning photoresist layer 51a, be that a photomask is carried out (back-side) step of exposure dorsad with the grid 22 of Fig. 5 B, and form the first patterning photoresist layer 51a.Wherein, the first photoresist layer 51 is necessary for positive photo anti-corrosion agent material, can carry out above-mentioned step of exposure dorsad.Be not limited to above-mentioned step of exposure dorsad as for the mode that forms the first patterning photoresist layer 51a, will be in illustrating that hereinafter other forms the mode of the first patterning photoresist layer 51a, be that example explains with step of exposure dorsad earlier at this.
After treating that the first patterning photoresist layer 51a forms, enter in the step 45, remove the etch stop material layer 25a of part, to form an etch stop 25.Shown in Fig. 5 D, etch stop 25 is corresponding to grid 22, and the width of etch stop 25 is less than the width of grid 22.In addition, the side of the side of etch stop 25 and grid 22 be separated by substantially 1～2 micron (μ m).
Then, enter in the step 46, remove the channel material layer 24a of part, to form a channel layer 24.Shown in Fig. 5 E, channel layer 24 is corresponding to grid 22, and the width of channel layer 24 is less than or equal to the width of grid 22, but greater than the width of etch stop 25.Wherein, etch stop 25 is formed on the central area of channel layer 24, and the side of channel layer 24 is between the side of the side of etch stop 25 and gate pole 24.In addition, the side of the side of etch stop 25 and channel layer 24 800 dusts () of being separated by substantially.Present embodiment utilizes the difference of rate of etch, make etch stop 25 than channel layer 24 with respect to grid 22 interior contracting, etch stop 25 and channel layer 24 will form a ladder structure in the top of grid 22.Wherein, present embodiment can change different etch-rates and time, makes channel layer 24 more outstanding than etch stop 25, avoids channel layer 25 than etch stop 25 interior contract excessively (undercut).
Then, enter in the step 47, remove the first patterning photoresist layer 51a, shown in 5F figure.
Then, enter in the step 48, and for example shown in Figure 2, form an ohmic contact layer 26 or 36, one source pole 27 and a drain electrode 28 in regular turn on insulating barrier 23. Ohmic contact layer 26 or 36 covers two ends of etch stop 25 and two ends of channel layer 24, and source electrode 27 and drain and 28 see through ohmic contact layer 26 or 36 accordingly and be electrically connected with two ends of channel layer 24.In the present embodiment, be that example explains with ohmic contact layer 26.How to form ohmic contact layer 26, source electrode 27 and 28 the flow processs on insulating barrier 23 that drain as for present embodiment, please refer to Fig. 5 G～5L.
At first, shown in Fig. 5 G, form an ohmic contact material layer 26a, a metal level 27a and one second photoresist layer 52 in regular turn on insulating barrier 23.Ohmic contact material layer 26a covers the channel layer 24 and the partial insulating layer 23 of etch stop 25, part, and metal level 27a covers ohmic contact material layer 26a, and the second photoresist layer 52 covers metal level 27a.Wherein, ohmic contact material layer 26a comprises N type doped silicon layer or P type doped silicon layer, and metal level 27a comprises the single or multiple lift structure of metal, metal alloy or its combination.If it is follow-up will form ohmic contact layer 36 time, this moment, formed ohmic contact material layer 26a comprised ohmic contact layer 36a and an ohmic contact layer 36b for the second time for the first time, ohmic contact layer 36a covers ohmic contact layer 36b for the second time for the first time, and the doping content of ohmic contact layer 36a is greater than the doping content of the ohmic contact layer 36b second time for the first time.
Then, shown in 5H figure, the patterning second photoresist layer 52, forming one second patterning photoresist layer 52a, and corresponding to grid 22, and the width of the second patterning photoresist layer 52a is greater than the width of grid 22.The second patterning photoresist layer 52a has at least one first part 52b, at least one second partly 52c and at least one the 3rd part 52d, and the second part 52c is corresponding to two ends of grid 22 and adjacent between the first part 52b and the 3rd part 52d.First partly 52b corresponding to the central area of etch stop 25, and second partly the thickness of 52c greater than first 52b partly, first partly the thickness of 52b greater than the 3rd thickness of 52d partly.In the present embodiment, the thickness of the 3rd part 52d is substantially zero.
In the process of the patterning second photoresist layer 52, hide the second photoresist layer 52 and carry out forward (front-side) step of exposure with a half-penetration type (half-tone) photomask 53.Half-penetration type photomask 53 has one first transparent area 53b, one second transparent area 53c and one the 3rd transparent area 53a, and the first transparent area 53b is corresponding to the central area of etch stop 25.The second transparent area 53c is corresponding to two ends of grid 22, and adjacent between the first transparent area 53b and the 3rd transparent area 53a.If the second photoresist layer 52 is positive photo anti-corrosion agent material, then the light transmittance of the second transparent area 53c is less than the light transmittance of the first transparent area 53b, and the light transmittance of the first transparent area 53b is less than the light transmittance of the 3rd transparent area 53a.If the second photoresist layer 52 is the negative photoresist material, then the light transmittance of the second transparent area 53c is greater than the light transmittance of the first transparent area 53b, and the light transmittance of the first transparent area 53b is greater than the light transmittance of the 3rd transparent area 53a.After treating that the second patterning photoresist layer 52a forms, promptly removable above-mentioned half-penetration type photomask 53.Again, present embodiment also can utilize GTG (gray level) photomask or slit (slit) the interference light mask patterning second photoresist layer 52, to form the second above-mentioned patterning photoresist layer 52a.
After treating that the second patterning photoresist layer 52a forms, shown in Fig. 5 I, remove the metal level 27a of part and the ohmic contact material layer 26a of part, to form a patterned metal layer 27b and a patterning ohmic contact layer 26b respectively.
Then, shown in Fig. 5 J, remove first 52b and the 3rd 52c and skiving second 52a partly partly partly, to form the 3rd a patterning photoresist layer 52e with an opening 52f in ashing (ashing) mode.Opening 52f is corresponding to the central area of etch stop 25 and the patterned metal layer 27b of expose portion.Above-mentioned ashing mode for example is to use ozone (O
3) or oxygen (O
2) the ashing mode.
Then, shown in Fig. 5 K, remove the patterned metal layer 27b of part and the patterning ohmic contact layer 26b of part, to form ohmic contact layer 26, source electrode 27 and to drain 28.
Then, shown in Fig. 5 L, remove the 3rd patterning photoresist layer 52e, thin-film transistor 20 is accused eventually at this and is finished.
In the present embodiment, as for two ends and the source electrode 27 of channel layer 24 and 28 modes that form ohmic contact that drain,, more can use hydrogen phosphide (PH except forming ohmic contact layer 26 or 36 in two ends and the source electrode 27 of channel layer 24 and draining between 28
3) two ends of plasma treatment channel layer 24.Thus, can eliminate the high value end of channel layer and the conducting electric current of increase channel layer.In addition, the technology of the thin-film transistor of present embodiment can also be used for five road photo-marsk processes, is not limited to four road photo-marsk processes.
In the process as for the patterning first photoresist layer 51, also can see through alternate manner and form the first above-mentioned patterning photoresist layer 51a.Please refer to Fig. 6, it illustrates is process section according to the another kind of patterning first photoresist layer of the present invention.In Fig. 6, hide the first photoresist layer 51 and carry out a forward step of exposure with a photomask 71, and form the first above-mentioned patterning photoresist layer 52a, and for example shown in Fig. 5 C.If the first photoresist layer 51 is positive photo anti-corrosion agent material, then the non-transparent area of photomask 71 is substantially corresponding to grid 22, and the width of the non-transparent area of photomask 71 is less than or equal to the width of grid 22.If the first photoresist layer 51 is the negative photoresist material, then the transparent area of photomask 71 is substantially corresponding to grid 22, and the width of the transparent area of photomask 71 is less than or equal to the width of grid 22.In addition, present embodiment also can see through the mode patterning first photoresist layer 51 of self-aligned, to form the first above-mentioned patterning photoresist layer 51a.
As for form ohmic contact layer 26 or 36, source electrode 27 and 28 the processes on insulating barrier 23 that drain in, also can see through alternate manner and reach.Please refer to Fig. 7 A～7F, it illustrates is another kind of to form ohmic contact layer, source electrode and the process section on insulating barrier of draining according to of the present invention.
At first, shown in Fig. 7 A, form an ohmic contact material layer 26a, a metal level 27 and one second photoresist layer 52 in regular turn on insulating barrier 23.In 7A figure, hide the second photoresist layer 52 and the preparation patterning second photoresist layer 52 with a photomask 81.If the second photoresist layer 52 is positive photo anti-corrosion agent material, the non-transparent area of photomask 81 is substantially corresponding to grid 22, and the width of the non-transparent area of photomask 81 is greater than the width of grid 22.If the second photoresist layer 52 is the negative photoresist material, the transparent area of photomask 81 is substantially corresponding to grid 22, and the width of the transparent area of photomask 81 is greater than the width of grid 22.
Then, shown in Fig. 7 B, the patterning second photoresist layer 52 is to form one second patterning photoresist layer 52a.The second patterning photoresist layer 82 is corresponding to grid 22, and the width of the second patterning photoresist layer 82 is greater than the width of grid 22.
Then, shown in Fig. 7 C, remove the metal level 27a of part and the ohmic contact material layer 26a of part, to form a patterned metal layer 27b and a patterning ohmic contact layer 26b respectively.
Then, utilize the laser 83 of Fig. 7 C, remove the second patterning photoresist layer 82a of the part on the central area that is positioned at etch stop 25 in laser cutting (laser cutting) mode, to form the 3rd a patterning photoresist layer 82b with an opening 82c, shown in Fig. 7 D.Opening 82c is corresponding to the central area of etch stop 25 and the patterned metal layer 27b of expose portion.
Then, shown in Fig. 7 E, remove the patterned metal layer 27b of part and the patterning ohmic contact layer 26b of part, to form ohmic contact layer 26, source electrode 27 and to drain 28.
Then, shown in Fig. 7 F, remove the 3rd patterning photoresist layer 82b, thin-film transistor 20 is accused eventually and is finished.
Though present embodiment is that example explains with the technology of thin-film transistor 20, the technology of present embodiment is not confined to this.For example, thin-film transistor 30 also can see through the technology of above-mentioned thin-film transistor 20 and finish, and thin- film transistor 20 and 30 technology do not exist together only different on the step that forms the ohmic contact material layer.
Disclosed thin-film transistor of the above embodiment of the present invention and manufacture method thereof, its scope with channel layer is recessed in the design in the scope of grid, not only can eliminate high value end extra in the channel layer and increase the conducting electric current, more can reduce the generation of photoelectric current and solve the shortcoming of light electric leakage.Thus, promote the running performance of thin-film transistor widely.
In sum; though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (23)
1. thin-film transistor comprises:
Grid is arranged on the substrate;
Insulating barrier is arranged on this substrate, and covers this grid;
Channel layer is arranged on this insulating barrier of part, and corresponding to this grid, and the width of this channel layer is less than or equal to the width of this grid;
Etch stop is arranged on this channel layer of part, and corresponding to this grid, and the width of this etch stop is less than the width of this channel layer;
Ohmic contact layer is arranged on this insulating barrier of part, and covers two ends of this etch stop and two ends of this channel layer; And
Source electrode and drain electrode are arranged on this ohmic contact layer, are electrically connected with this two end of this channel layer in order to see through this ohmic contact layer accordingly.
2. thin-film transistor as claimed in claim 1, wherein the side of the side of this etch stop and this grid is separated by 1～2 micron substantially.
3. thin-film transistor as claimed in claim 1, the wherein side of the side of this etch stop and this channel layer 800 dusts of being separated by substantially.
4. thin-film transistor as claimed in claim 1, wherein this channel layer comprises amorphous silicon layer or polysilicon layer.
5. thin-film transistor as claimed in claim 1, wherein this insulating barrier comprises silicon nitride, silicon oxynitride, silica or its combination.
6. thin-film transistor as claimed in claim 1, wherein this etch stop comprises silicon nitride, silicon oxynitride, silica or its combination.
7. thin-film transistor as claimed in claim 1, wherein this grid comprises metal, metal alloy or its combination.
8. thin-film transistor as claimed in claim 1, wherein this source electrode and this drain electrode comprise metal, metal alloy or its combination.
9. thin-film transistor as claimed in claim 1, wherein this ohmic contact layer comprises N type doped silicon layer or P type doped silicon layer.
10. thin-film transistor as claimed in claim 1, wherein this ohmic contact layer comprises for the first time ohmic contact layer and ohmic contact layer for the second time, this for the first time the doping content of ohmic contact layer greater than this doping content of ohmic contact layer for the second time.
11. a method of manufacturing thin film transistor comprises:
Form grid on substrate;
Form insulating barrier on this substrate, and cover this grid;
Form channel material layer, etch stop material layer and the first photoresist layer in regular turn on this insulating barrier;
This first photoresist layer of patterning, to form the first patterning photoresist layer, this first patterning photoresist layer is corresponding to this grid, and the width of this first patterning photoresist layer is less than or equal to the width of this grid;
Remove this etch stop material layer of part, to form etch stop, this etch stop is corresponding to this grid, and the width of this etch stop is less than the width of this grid;
Remove this channel material layer of part, to form channel layer, this channel layer is corresponding to this grid, and the width of this channel layer is less than or equal to the width of this grid;
Remove this first patterning photoresist layer; And
Form ohmic contact layer, source electrode in regular turn and drain on this insulating barrier, this ohmic contact layer covers two ends of this etch stop and two ends of this channel layer, and this source electrode and this drain electrode sees through this ohmic contact layer accordingly and is electrically connected with this two end of this channel layer.
12. manufacture method as claimed in claim 11, wherein the step of this first photoresist layer of this patterning comprises:
With this grid is that photomask is carried out step of exposure dorsad, and forms this first patterning photoresist layer.
13. manufacture method as claimed in claim 11, wherein the step of this first photoresist layer of this patterning comprises:
Carry out the forward step of exposure with photomask, and form this first patterning photoresist layer.
14. manufacture method as claimed in claim 11, wherein the step of this ohmic contact layer of this formation, this source electrode and this drain electrode comprises:
Form ohmic contact material layer, metal level and the second photoresist layer in regular turn on this insulating barrier;
This second photoresist layer of patterning, to form the second patterning photoresist layer, and corresponding to this grid, and the width of this second patterning photoresist layer is greater than the width of this grid, this second patterning photoresist layer has at least one first partly, at least one second part and at least one the 3rd partly, this second part is corresponding to two ends of this grid and adjacent between this first part and the 3rd part, this first part is corresponding to this etch stop, and the thickness of this second part is greater than this first part, and the thickness of this first part is greater than the thickness of the 3rd part;
Remove this metal level of part and this ohmic contact material layer of part, to form patterned metal layer and patterning ohmic contact layer respectively;
With the ashing mode remove this first partly and the 3rd partly and skiving this second partly, have the 3rd patterning photoresist layer of opening with formation, this opening is corresponding to this patterned metal layer of this etch stop and expose portion;
Remove this patterned metal layer of part and this patterning ohmic contact layer of part, to form this ohmic contact layer, this source electrode and this drain electrode; And
Remove the 3rd patterning photoresist layer.
15. manufacture method as claimed in claim 14, wherein the thickness of the 3rd part is substantially zero.
16. manufacture method as claimed in claim 11, wherein the step of this ohmic contact layer of this formation, this source electrode and this drain electrode comprises:
Form ohmic contact material layer, metal level and the second photoresist layer in regular turn on this insulating barrier;
This second photoresist layer of patterning, forming the second patterning photoresist layer, and corresponding to this grid, and the width of this second patterning photoresist layer is greater than the width of this grid;
Remove this metal level of part and this ohmic contact material layer of part, to form patterned metal layer and patterning ohmic contact layer respectively;
Remove the second patterning photoresist layer of the part that is positioned on this etch stop in the laser cutting mode, have the 3rd patterning photoresist layer of opening with formation, this opening is corresponding to this patterned metal layer of this etch stop and expose portion;
Remove this patterned metal layer of part and the patterning ohmic contact layer of part, to form this ohmic contact layer, this source electrode and this drain electrode; And
Remove the 3rd patterning photoresist layer.
17. manufacture method as claimed in claim 11, wherein the side of the side of this etch stop and this grid is separated by 1～2 micron substantially.
18. manufacture method as claimed in claim 11, the wherein side of the side of this etch stop and this channel layer 800 dusts of being separated by substantially.
19. manufacture method as claimed in claim 11, wherein this channel layer comprises amorphous silicon layer or polysilicon layer.
20. manufacture method as claimed in claim 11, wherein this insulating barrier comprises silicon nitride, silicon oxynitride, silica or its combination.
21. manufacture method as claimed in claim 11, wherein this etch stop comprises silicon nitride, silicon oxynitride, silica or its combination.
22. manufacture method as claimed in claim 11, wherein this ohmic contact layer comprises N type doped silicon layer or P type doped silicon layer.
23. manufacture method as claimed in claim 11, wherein this ohmic contact layer comprises for the first time ohmic contact layer and ohmic contact layer for the second time, this for the first time the doping content of ohmic contact layer greater than this doping content of ohmic contact layer for the second time.
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| KR100225098B1 (en) * | 1996-07-02 | 1999-10-15 | 구자홍 | Method of fabrication of thin transistor |
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