CN1822320A - 制备GaN基稀磁半导体材料的方法 - Google Patents
制备GaN基稀磁半导体材料的方法 Download PDFInfo
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- CN1822320A CN1822320A CN 200610001301 CN200610001301A CN1822320A CN 1822320 A CN1822320 A CN 1822320A CN 200610001301 CN200610001301 CN 200610001301 CN 200610001301 A CN200610001301 A CN 200610001301A CN 1822320 A CN1822320 A CN 1822320A
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CNB2006100013011A CN100435281C (zh) | 2006-01-17 | 2006-01-17 | 制备GaN基稀磁半导体材料的方法 |
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CNB2006100013011A CN100435281C (zh) | 2006-01-17 | 2006-01-17 | 制备GaN基稀磁半导体材料的方法 |
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CN1822320A true CN1822320A (zh) | 2006-08-23 |
CN100435281C CN100435281C (zh) | 2008-11-19 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101899706A (zh) * | 2010-06-09 | 2010-12-01 | 中国科学院半导体研究所 | 采用MOCVD制备非极性GaN基稀磁半导体材料的方法 |
CN101319400B (zh) * | 2008-05-19 | 2012-07-04 | 南京大学 | 一种Fe掺杂生长GaFeN稀释磁性半导体的方法及其用途 |
CN107025971A (zh) * | 2017-05-11 | 2017-08-08 | 电子科技大学 | 具有室温铁磁性的稀磁半导体材料及其制备方法和用途 |
IT201900006410A1 (it) | 2019-04-29 | 2019-07-29 | Tommaso Intini | Sistema di interazione elettromagnetica per la trasmissione di energia senza fili, generante uno stato di benessere immediato tramite accessori e dispositivi di biomagnetismo frequenziato |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1113113C (zh) * | 1999-09-28 | 2003-07-02 | 中国科学院半导体研究所 | 一种生长氮化镓及其化合物薄膜的方法 |
US7919791B2 (en) * | 2002-03-25 | 2011-04-05 | Cree, Inc. | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same |
CN1388537A (zh) * | 2002-05-31 | 2003-01-01 | 南京大学 | 离子注入法制备GaN基稀释磁性半导体材料的方法 |
CN1264200C (zh) * | 2003-11-26 | 2006-07-12 | 南京大学 | 利用氢化物气相外延制备GaMnN铁磁性薄膜的方法 |
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- 2006-01-17 CN CNB2006100013011A patent/CN100435281C/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101319400B (zh) * | 2008-05-19 | 2012-07-04 | 南京大学 | 一种Fe掺杂生长GaFeN稀释磁性半导体的方法及其用途 |
CN101899706A (zh) * | 2010-06-09 | 2010-12-01 | 中国科学院半导体研究所 | 采用MOCVD制备非极性GaN基稀磁半导体材料的方法 |
CN101899706B (zh) * | 2010-06-09 | 2012-05-30 | 中国科学院半导体研究所 | 采用MOCVD制备非极性GaN基稀磁半导体材料的方法 |
CN107025971A (zh) * | 2017-05-11 | 2017-08-08 | 电子科技大学 | 具有室温铁磁性的稀磁半导体材料及其制备方法和用途 |
IT201900006410A1 (it) | 2019-04-29 | 2019-07-29 | Tommaso Intini | Sistema di interazione elettromagnetica per la trasmissione di energia senza fili, generante uno stato di benessere immediato tramite accessori e dispositivi di biomagnetismo frequenziato |
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CN100435281C (zh) | 2008-11-19 |
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