CN1801487A - Switch circuit - Google Patents
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- CN1801487A CN1801487A CN 200410081776 CN200410081776A CN1801487A CN 1801487 A CN1801487 A CN 1801487A CN 200410081776 CN200410081776 CN 200410081776 CN 200410081776 A CN200410081776 A CN 200410081776A CN 1801487 A CN1801487 A CN 1801487A
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Abstract
The switch circuit comprises: a first MOS element of the first conductive type in substrate of the second conductive type with a first end, a second end and a control end coupled with an output/input port, an antenna element and a control signal respectively, and a bulk end; a deep-trap zone of the first conductive type arranged in said substrate to isolate the MOS element and substrate; and a resistance element coupled between the second end of MOS element and bulk end.
Description
Technical field
The present invention is relevant for a kind of switching circuit, and relevant especially a kind of can the reduction inserts the radio-frequency switch circuit that loses.
Background technology
Well known, radio-frequency (RF) switch element (radio frequency switches) is the important composition element of many wireless communication systems.For example mobile phone (cellular telephone), radio-paging device (wireless pagers), satellite communication equipment (satellite communicationequipment), cable television appliances (cable television equipment) or the like all contain the radio-frequency (RF) switch element.In general, the usefulness of radio-frequency (RF) switch element is by three main parameters, and for example insertion loss (insertion loss), switch insulation (switch isolation) and 1dB compression point (compression point) are controlled.
The 1st figure is the traditional single-pole double-throw of expression (single pole dual throw; SPDT) radio frequency (radio frequency; RF) switching circuit comprises switch element M1～M4, and according to the small-signal model of switch element M1/M2, and can learn that it inserts loss can be by reducing substrate (Bulk) resistance or increasing substrate resistance and make moderate progress.
People such as Feng-Jung Huang are in IEEE J.Solid-State Circuits, vol.36, No.3, among the March 2001, system discloses the contact (contact) that increases between substrate and the ground connection, makes that the total resistance of contact reduces, substrate resistance reduces, and makes that inserting loss reduces.Yet the method will need a large amount of areas to increase contact (contact).In addition, RF switch element system is used between the RX/TX of antenna end ANT and reception/transmitting terminal, the power that the power amplifier of transmitting terminal (power amplifier) pours into the RF switch element often is higher than 10dBm, when negative semifocal chord during the cycle, voltage swing (voltage swing) can make the leakage/source end level of MOS element be lower than 0V.Because the body (bulk) of MOS end ground connection, will cause the leakage/source electrode of NMOS and the PN between body (bulk) to connect face has the positive bias phenomenon, causes distorted signals.
Shown in the 2nd figure, people such as Niranjan A are in IEEE J.Solid-State Circuits, vol.39, and No.6 among the June 2004, discloses and uses lc circuit in parallel, forms the impedance of approximate open circuit under required frequency, makes substrate resistance RB approximate infinitely great.Therefore, under the required frequency, can obtain the insertion loss an of the best.Yet, in order to allow the LC parallel circuits under required frequency, forming approximate infinitely-great impedance, inductance element needs high Q value.But inductance element Q value is higher, and it is just narrower that this LC element can show the frequency range that is inserted into loss.That is to say, use the LC element to have and be inserted into loss and frequency range compensation (trade-off) between the two.In addition, the method need use inductance element will need bigger area.Moreover, the method in high-power down, the problem of same distorted signals is so aforementioned two known switch elements all need to apply DC and are biased on the MOS element leakage/source electrode.
Summary of the invention
In view of this, primary and foremost purpose of the present invention by deep-well district technology and external resistor element, reduces the switching losses of switch element.The present invention system provides switching circuit to comprise a MOS element of first conductivity type, be arranged in the substrate of second conductivity type, comprise that first end couples output/input, second end couples antenna element, control end couples control signal, and body (bulk) end couples first voltage via external resistor element, and the deep-well district of first conductivity type, be arranged in the substrate of second conductivity type, in order to a MOS element of isolated first conductivity type and the substrate of second conductivity type.
For reaching above-mentioned purpose, the present invention also provides another switching circuit, comprises a MOS element of first conductivity type, be arranged in the substrate of second conductivity type, comprise that first end couples output/input, second end couples antenna element, control end couples control signal, and body end; The deep-well district of first conductivity type is arranged in the substrate of second conductivity type, in order to a MOS element of isolated first conductivity type and the substrate of second conductivity type; And resistive element, be to be coupled between second end and body end of a MOS element.
For reaching above-mentioned purpose, the present invention also provides a kind of switching circuit, comprises the deep-well district of first conductivity type, is arranged in the substrate of second conductivity type; First, second MOS element of first conductivity type, be arranged in the deep-well district of first conductivity type, comprise that first end system couples the first output/input, second end couples antenna element, control end couples control signal, and body end couples first voltage via first external resistor element; And the 2nd MOS element of first conductivity type, be arranged in the deep-well district of first conductivity type, comprise that first end couples the second output/input, second end couples antenna element, control end couples the inversion signal of control signal, and body end couples first voltage via second external resistor element.Wherein, the deep-well district of first conductivity type is in order to first, second MOS element of isolated first conductivity type and the substrate of second conductivity type.
For reaching above-mentioned purpose, the present invention provides a switching circuit again, comprises the deep-well district of first conductivity type, is arranged in the substrate of second conductivity type; The one MOS element of first conductivity type is arranged at the deep-well district of first conductivity type, comprises that first end couples the first output/input, and second end couples antenna element, and control end couples control signal, and body end; First resistive element is to be coupled between first end and body end of a MOS element; The 2nd MOS element of first conductivity type, be arranged at the deep-well district of first conductivity type, comprise that first end couples the second output/input, second end couples antenna element, control end couples control signal, and body end, wherein, the deep-well district of first conductivity type is in order to first, second MOS element of isolated first conductivity type and the substrate of second conductivity type; And second resistive element, be to be coupled between first end and body end of the 2nd MOS element.
Description of drawings
The 1st figure is the radio-frequency switch circuit of a kind of traditional single-pole double-throw of expression.
The 2nd figure is a kind of radio-frequency switch circuit that uses lc circuit in parallel of expression.
The 3rd figure is expressed as a radio-frequency switch circuit of the first embodiment of the present invention.
The 4th figure is the structure of the switch element shown in expression the 3rd figure.
The 5th figure is expression frequency and the graph of a relation that inserts loss.
The 6th figure is expressed as another radio-frequency switch circuit of the first embodiment of the present invention.
The 7th figure is expressed as the radio-frequency switch circuit of a single-pole double-throw of the first embodiment of the present invention.
The 8th figure is expressed as a radio-frequency switch circuit of the second embodiment of the present invention.
The 9th figure is the structure of the switch element shown in expression the 7th figure.
The 10th figure is expressed as another radio-frequency switch circuit of the second embodiment of the present invention.
The 11st figure is expressed as the radio-frequency switch circuit of a single-pole double-throw of the second embodiment of the present invention.
Label declaration
Prior art
M1～M5: switch element; ANT: antenna assembly;
RX: receiving terminal; TX: transmitting terminal;
D: drain electrode; S: source electrode;
G: grid; B: body end;
L: inductance; C: electric capacity.
The present invention
10OA～100D: switching circuit;
10A～10D, N1a～N1d, M12, M14, M16: switch element;
The N1:NMOS element;
The P1:PMOS element;
RA, RA1, RA2: external resistor element;
VCTRL ,/VCRTL: control signal;
ANT: antenna assembly;
18,36: the first ends;
20,40: the second ends;
RB: contact resistance;
D: drain electrode;
S: source electrode;
G: grid;
B: body end;
L: inductance;
R1～R4: resistance;
The 12:P substrate;
The 14:N type deep well area;
The 16:P wellblock;
The 24:N substrate;
The 28:P type deep well area;
The 32:N wellblock;
TX/RX, TX1/RX1, TX2/RX2: output/input.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended diagram, be described in detail below:
First embodiment
The 3rd figure is expressed as a radio-frequency switch circuit of the first embodiment of the present invention.Switching circuit 100A system comprises two switch element 10A, M12 as shown in the figure.Wherein switch element 10A system comprises that first end 18 couples output/input TX/RX, and second end 20 couples antenna element ANT, and control end couples control signal VCTRL, and body (bulk) end B couples earthed voltage GND via external resistor element RA.Switch element M12 comprises that control end couples the inversion signal of control signal VCTRL, and first end couples earthed voltage GND, and second end couples first end 18 of input/input TX/RX and switch element 10A.When switch element 10A system according to the control signal on its control end, and conducting is in order to being passed to output/input by the signal that antenna assembly received, or the signal that the I/O end is exported is passed to antenna assembly.
The 4th figure is the structure of expression switch element 10A.As shown in the figure, switch element 10A system comprises NMOS element N1 and the N type deep well area 14 that is arranged in the P substrate 12.MOS element N1 system comprises that P wellblock 16 is arranged in the N type deep well area 14, first, second doped region is arranged in the P wellblock 16, and body (bulk) end couples earthed voltage (GND) via external resistor element RA; N type deep well area 14 is to be arranged in the P substrate 12, in order to isolated NMOS element N1 and P substrate 12.
Can insert loss to reduce owing to increase or reduce the substrate resistance, present embodiment system is by the external resistor element RA of series connection one high impedance, make the body of switch element 10A and the resistance between earth terminal, become the sum total of contact resistance RB and external resistor element RA, in order to increase the insulation between body end and the earth terminal, insert loss and reduce.If but lacked N type deep well area 14, the series resistance RA on the body end B of NMOS element N1 will lose the function of the isolated loss of signal.Therefore, the present invention is by triple wellblocks (triple well) technology, and in the below of the P wellblock 16 of NMOS element N1, doped N-type deep-well district 14 joins in order to the body end B of isolated NMOS element N1 and the P substrate (GND) of whole IC again.Use a large amount of contacts (contact) or inductance, electric capacity compared to known techniques, the present invention uses resistive element, and required face is less and do not have the restriction of frequency range, and wherein the resistance of external resistor element RA system is not less than 1K ohm, is preferably more than 10K ohm.
The 5th figure is expression frequency and the graph of a relation that inserts loss, and wherein curve RH1 represents not add in the known switch element of non-essential resistance, frequency and the relation of inserting loss; The expression the present invention of curve RH2 system has in the switch element of external resistor element, frequency and the relation of inserting loss.Hence one can see that, promoted 0.5dB when insertion of the present invention is lost in 3GHz, more promoted about 1dB when 6GHz.
Second embodiment
The second embodiment of the present invention also provides single-pole double-throw (single pole dual throw; SPDT) radio-frequency switch circuit is shown in the 7th figure.As shown in the figure, switching circuit 100B comprises switch element N1a, N1b, M14 and M16, and wherein switch element M14 and M16 are the normal N MOS transistor, and the structure of switch element N1a, N1b system is identical with the switch element 10A shown in the 4th figure.Switch element N1a has drain electrode end system and is coupled to I/O end RX1/TX1, source terminal is coupled to antenna assembly ANT, gate terminal couples via resistance R 1 and is coupled to control signal VCTRL, and body end is coupled to earthing potential GND by external resistor element RA1.Switch element N1b has drain electrode end system and is coupled to I/O end RX2/TX2, source terminal is coupled to antenna assembly ANT, gate terminal is coupled to inversion signal/VCTRL of control signal VCTRL via resistance R 2, and body end is coupled to earthing potential GND by external resistor element RA2.Switch element M14 has drain electrode end system and is coupled to I/O end RX1/TX1, source terminal is coupled to earthing potential GND via electric capacity, gate terminal is coupled to inversion signal/VCRTL of control signal VCTRL via resistance R 3, and body end is coupled to earthing potential GND.Switch element M16 has drain electrode end system and is coupled to I/O end RX2/TX2, source terminal is coupled to earthing potential GND via electric capacity, gate terminal couples via resistance R 4 and is coupled to control signal VCTRL, and body end is coupled to earthing potential GND, wherein the resistance of external resistor element RA1, RA2 system is not less than 1K ohm, is preferably more than 10K ohm.
When control signal VCTRL was HIGH, switch element N1a can conducting be passed to output/input RX1/TX1 in order to the signal that antenna assembly ANT is received, or the signal that I/O end RX1/TX1 is exported is passed to antenna assembly ANT.Switch element M16 can conducting, and moving the current potential on the I/O end RX2/TX2 to earthing potential GND, and switch element N1b, M14 can end.When control signal VCTRL was LOW, switch element N1b can conducting be passed to output/input RX2/TX2 in order to the signal that antenna assembly ANT is received, or the signal that I/O end RX2/TX2 is exported is passed to antenna assembly ANT conversely speaking.Switch element M14 can conducting, and moving the current potential on the I/O end RX1/TX1 to earthing potential GND, and switch element N1a, M16 can end.
The 3rd embodiment
When negative semifocal chord during the cycle, voltage swing (voltage swing) can make the leakage/source end level of MOS element be lower than 0V.Because the body (bulk) of MOS element end ground connection, with causing the leakage/source electrode of NMOS element and the PN between body (bulk) to connect face the positive bias phenomenon is arranged, and cause distorted signals.For fear of this problem, third embodiment of the present invention system discloses another radio-frequency switch circuit 100C, as shown in the figure 8.
As shown in the figure, switching circuit 100C system comprises two switch element 10C, M12.Wherein switch element 10C system comprises that first end 18 couples output/input TX/RX, and second end 20 couples antenna element ANT, and control end couples control signal VCTRL, and body (bulk) end B is coupled to earthed voltage GND via external resistor element RA.Switch element M12 comprises that control end couples the inversion signal of control signal VCTRL, and first end couples earthed voltage GND, and second end couples first end 18 of input/input TX/RX and switch element 10C.When switch element 10C system according to the control signal VCTRL on its control end, and conducting is passed to output/input TX/RX in order to the signal that is received by antenna assembly ANT, or the signal that I/O end TX/RX is exported is passed to antenna assembly ANT.
The 9th figure is the structure of expression switch element 10C.As shown in the figure, switch element 10C is similar to the switch element 10A of the 3rd figure, is to comprise NMOS element N1 and N type deep well area 14, and different is that external resistor element RA system is coupled between the body end B and source S of NMOS element N1.Because external resistor element RA, the total resistance between the body end of switch element 10C and earth terminal also can increase, and inserts loss in order to reduce, and wherein the resistance of external resistor element RA system is not less than 1K ohm, is preferably more than 10K ohm.
In addition, because the body end B of NMOS element N1 does not have current flowing, therefore when the source terminal S of NMOS element N1 is connected with body end B, source S can equate with current potential on the body end B.Therefore, during the cycle, not having potential difference between body end B, the source terminal D of NMOS element N1 and the drain electrode end S at negative semifocal chord, thus can not produce along inclined to one side (forward bias), thereby can prevent distorted signals.
Similarly, switch element 10C can also be realized by PMOS and P type deep well area, the switch element 10D shown in the 10th figure.As shown in the figure, switching circuit 10D system comprises PMOS element P1 and P type deep well area 28.PMOS element P1 system is arranged in the N substrate 24, and comprise that N wellblock 32 is arranged in the P type deep well area 28, source doping region S, drain doping region D and body (bulk) end B be coupled to source doping region S via external resistor element RA.P type deep well area 28 is to be arranged in the N type substrate 24, in order to isolated PMOS element P1 and N substrate 24.The operating principle system of switch element 10D is similar to the switch element 10A shown in the 3rd figure, does not state tired in this.
The 4th embodiment
The fourth embodiment of the present invention also provides the radio-frequency switch circuit of another single-pole double-throw, shown in the 11st figure.As shown in the figure, switching circuit 100D comprises switch element N1c, N1d, M14 and M16, and wherein switch element M14 and M16 are the normal N MOS transistor, and the structure of switch element N1c, N1d system is identical with the switch element 10D shown in the 10th figure.Switch element N1c has drain electrode end system and is coupled to I/O end RX1/TX1, and source terminal is coupled to antenna assembly ANT, and gate terminal is coupled to control signal VCTRL, and body end is coupled to its source terminal by external resistor element RA1.Switch element N1d has drain electrode end system and is coupled to I/O end RX2/TX2, and source terminal is coupled to antenna assembly ANT, and gate terminal is coupled to inversion signal/VCTRL of control signal VCTRL, and body end is coupled to its source terminal by external resistor element RA2.Switch element M14 has drain electrode end system and is coupled to I/O end RX1/TX1, source terminal is coupled to earthing potential GND via electric capacity, gate terminal couples the inversion signal/VCRTL that is coupled to control signal VCTRL via resistance R 3, and body end is coupled to earthing potential GND.Switch element M16 has drain electrode end system and is coupled to I/O end RX2/TX2, source terminal is coupled to earthing potential GND via electric capacity, gate terminal couples via resistance R 4 and is coupled to control signal VCTRL, and body end is coupled to earthing potential GND, wherein the resistance of external resistor element RA1, RA2 system is not less than 1K ohm, is preferably more than 10K ohm.
When control signal VCTRL was HIGH, switch element N1c can conducting be passed to output/input RX1/TX1 in order to the signal that antenna assembly ANT is received, or the signal that I/O end RX1/TX1 is exported is passed to antenna assembly ANT.Switch element M16 can conducting, and moving the current potential on the I/O end RX2/TX2 to earthing potential GND, and switch element N1d, M14 can end.When control signal VCTRL was LOW, switch element N1d can conducting be passed to output/input RX2/TX2 in order to the signal that antenna assembly ANT is received, or the signal that I/O end RX2/TX2 is exported is passed to antenna assembly ANT conversely speaking.Switch element M14 can conducting, and moving the current potential on the I/O end RX1/TX1 to earthing potential GND, and switch element N1c, M16 can end.Because external resistor element RA, the total resistance between the body end of switch element 10D and earth terminal also can increase, and inserts loss in order to reduce.In addition, because the body end B of switch element does not have current flowing, therefore when the source terminal S of switch element is connected with body end B, source S can equate with current potential on the body end B.Therefore, during the cycle, not having potential difference between the body end B of switch element, source terminal D and the drain electrode end S at negative semifocal chord, thus can not produce along inclined to one side (forward bias), thereby can prevent distorted signals.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (30)
1. switching circuit comprises:
The one MOS element of first conductivity type is arranged in the substrate of second conductivity type, comprises that first end couples output/input, and second end couples antenna element, and control end couples control signal, and body end couples first voltage via external resistor element; And
The deep-well district of first conductivity type is arranged in the substrate of above-mentioned second conductivity type, in order to a MOS element of isolated above-mentioned first conductivity type and the substrate of above-mentioned second conductivity type.
2. switching circuit according to claim 1, a wherein above-mentioned MOS element comprises:
The wellblock of second conductivity type is arranged in the deep-well district of above-mentioned first conductivity type, is coupled to above-mentioned body end;
First doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, is coupled to above-mentioned first end; And
Second doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, couples above-mentioned second end.
3. switching circuit according to claim 1, wherein above-mentioned first conductivity type is the N type, and second conductivity type is the P type.
4. switching circuit according to claim 3, wherein above-mentioned first voltage is earthed voltage.
5. switching circuit according to claim 4 also comprises the 2nd MOS element of first conductivity type having first end that first end couples an above-mentioned MOS element, and second end couples above-mentioned earthed voltage, and control end couples the inversion signal of above-mentioned control signal.
6. switching circuit according to claim 1, wherein above-mentioned first conductivity type is the P type, and second conductivity type is the N type.
7. switching circuit according to claim 6, wherein above-mentioned first voltage is supply voltage.
8. switching circuit according to claim 7 also comprises the 2nd MOS element of first conductivity type having first end that first end couples an above-mentioned MOS element, and second end couples above-mentioned supply voltage, and control end couples the inversion signal of above-mentioned control signal.
9. switching circuit according to claim 1, wherein the resistance of said external resistive element system is not less than 1K ohm.
10. switching circuit comprises:
The one MOS element of first conductivity type is arranged in the substrate of second conductivity type, comprises that first end couples output/input, and second end couples antenna element, and control end couples control signal, and body end;
The deep-well district of first conductivity type is arranged in the substrate of above-mentioned second conductivity type, in order to a MOS element of isolated above-mentioned first conductivity type and the substrate of above-mentioned second conductivity type; And
Resistive element is to be coupled between second end and body end of an above-mentioned MOS element.
11. switching circuit according to claim 10, a wherein above-mentioned MOS element comprises:
The wellblock of second conductivity type is arranged in the above-mentioned first conduction type deep well area, is coupled to above-mentioned body end;
First doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, is coupled to above-mentioned first end; And
Second doped region of above-mentioned first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, couples above-mentioned second end.
12. switching circuit according to claim 10, wherein above-mentioned first conductivity type is the N type, and second conductivity type is the P type.
13. switching circuit according to claim 12, the 2nd MOS element that also comprises first conductivity type, have first end and couple first end of an above-mentioned MOS element, second end couples above-mentioned earthed voltage, and control end couples the inversion signal of above-mentioned control signal.
14. switching circuit according to claim 10, wherein above-mentioned first conductivity type is the P type, and second conductivity type is the N type.
15. switching circuit according to claim 14, the 2nd MOS element that also comprises first conductivity type, have first end and couple first end of an above-mentioned MOS element, second end couples above-mentioned supply voltage, and control end couples the inversion signal of above-mentioned control signal.
16. a switching circuit comprises:
The deep-well district of first conductivity type is arranged in the substrate of second conductivity type;
First, second MOS element of first conductivity type, be arranged in the deep-well district of above-mentioned first conductivity type, comprise that first end system couples the first output/input, second end couples antenna element, control end couples control signal, and body end couples first voltage via first external resistor element; And
The 2nd MOS element of first conductivity type, be arranged in the dark and district of above-mentioned first conductivity type, comprise that first end couples the second output/input, second end couples above-mentioned antenna element, control end couples the inversion signal of above-mentioned control signal, and body end couples above-mentioned first voltage via second external resistor element
Wherein, the deep-well district of above-mentioned first conductivity type is in order to first, second MOS element of isolated above-mentioned first conductivity type and the substrate of above-mentioned second conductivity type.
17. switching circuit according to claim 16, wherein above-mentioned first, second MOS element respectively comprises:
The wellblock of second conductivity type is arranged in the deep-well district of above-mentioned first conductivity type, is coupled to above-mentioned body end;
First doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, is coupled to above-mentioned first end; And
Second doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, couples above-mentioned second end.
18. switching circuit according to claim 16, wherein above-mentioned first conductivity type is the N type, and second conductivity type is the P type.
19. switching circuit according to claim 18, wherein above-mentioned first voltage is earthed voltage.
20. switching circuit according to claim 19 also comprises:
The 3rd MOS element of first conductivity type has first end that first end couples an above-mentioned MOS element, and second end couples above-mentioned earthed voltage, and control end couples above-mentioned inversion signal; And
The 4th MOS element of first conductivity type has first end that first end couples above-mentioned the 2nd MOS element, and second end couples above-mentioned earthed voltage, and control end couples above-mentioned control signal.
21. switching circuit according to claim 16, wherein above-mentioned first conductivity type is the P type, and second conductivity type is the N type.
22. switching circuit according to claim 21, wherein above-mentioned first voltage is supply voltage.
23. switching circuit according to claim 16, wherein said switching circuit is a radio-frequency switch circuit.
24. switching circuit according to claim 16, wherein the resistance of above-mentioned first, second external resistor element system is not less than 1K ohm.
25. a switching circuit comprises:
The deep-well district of first conductivity type is arranged in the substrate of second conductivity type;
The one MOS element of first conductivity type is arranged at the deep-well district of above-mentioned first conductivity type, comprises that first end couples the first output/input, and second end couples antenna element, and control end couples control signal, and body end;
First resistive element is to be coupled between first end and body end of an above-mentioned MOS element;
The 2nd MOS element of first conductivity type, be arranged at the deep-well district of above-mentioned first conductivity type, comprise that first end couples the second output/input, second end couples above-mentioned antenna element, control end couples control signal, and body end, wherein, the deep-well district of above-mentioned first conductivity type is in order to first, second MOS element of isolated above-mentioned first conductivity type and the substrate of above-mentioned second conductivity type; And
Second resistive element is to be coupled between first end and body end of above-mentioned the 2nd MOS element.
26. switching circuit according to claim 25, wherein above-mentioned first, second MOS element respectively comprises:
The wellblock of second conductivity type is arranged in the above-mentioned first conduction type deep well area, is coupled to above-mentioned body end;
First doped region of first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, is coupled to above-mentioned first end; And
Second doped region of above-mentioned first conductivity type is arranged in the wellblock of above-mentioned second conductivity type, couples above-mentioned second end.
27. switching circuit according to claim 25, wherein above-mentioned first conductivity type is the N type, and second conductivity type is the P type.
28. switching circuit according to claim 27 also comprises:
The 3rd MOS element of first conductivity type has first end that first end couples an above-mentioned MOS element, and second end couples above-mentioned earthed voltage, and control end couples above-mentioned inversion signal; And
The 4th MOS element of first conductivity type has first end that first end couples above-mentioned the 2nd MOS element, and second end couples above-mentioned earthed voltage, and control end couples above-mentioned control signal.
29. switching circuit according to claim 25, wherein said switching circuit is a radio-frequency switch circuit.
30. switching circuit according to claim 25, wherein the resistance of said external resistive element system is greater than 1K ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100817767A CN100388489C (en) | 2004-12-31 | 2004-12-31 | Switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100817767A CN100388489C (en) | 2004-12-31 | 2004-12-31 | Switch circuit |
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| Publication Number | Publication Date |
|---|---|
| CN1801487A true CN1801487A (en) | 2006-07-12 |
| CN100388489C CN100388489C (en) | 2008-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100817767A Expired - Fee Related CN100388489C (en) | 2004-12-31 | 2004-12-31 | Switch circuit |
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| CN102882498A (en) * | 2011-07-13 | 2013-01-16 | 三星电机株式会社 | Resistor-sharing switching circuit |
| CN101656335B (en) * | 2009-09-22 | 2013-01-30 | 南京国博电子有限公司 | Asymmetrical super-power radio-frequency switch module and preparation method thereof |
| CN107026161A (en) * | 2015-12-31 | 2017-08-08 | 台湾积体电路制造股份有限公司 | Semiconductor device |
| US20220060202A1 (en) * | 2020-08-21 | 2022-02-24 | Skyworks Solutions, Inc. | Systems and methods for magnitude and phase trimming |
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| JP3243892B2 (en) * | 1993-05-21 | 2002-01-07 | ソニー株式会社 | Signal switch |
| US6804502B2 (en) * | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP2003283362A (en) * | 2002-03-20 | 2003-10-03 | Matsushita Electric Ind Co Ltd | Antenna switch module and mobile communication equipment using the same |
| JP4262933B2 (en) * | 2002-05-30 | 2009-05-13 | Ｎｅｃエレクトロニクス株式会社 | High frequency circuit element |
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2004
- 2004-12-31 CN CNB2004100817767A patent/CN100388489C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656335B (en) * | 2009-09-22 | 2013-01-30 | 南京国博电子有限公司 | Asymmetrical super-power radio-frequency switch module and preparation method thereof |
| CN102882498A (en) * | 2011-07-13 | 2013-01-16 | 三星电机株式会社 | Resistor-sharing switching circuit |
| CN102882498B (en) * | 2011-07-13 | 2016-03-02 | 三星电机株式会社 | Resistance shares switching circuit |
| CN107026161A (en) * | 2015-12-31 | 2017-08-08 | 台湾积体电路制造股份有限公司 | Semiconductor device |
| CN107026161B (en) * | 2015-12-31 | 2021-04-06 | 台湾积体电路制造股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| US20220060202A1 (en) * | 2020-08-21 | 2022-02-24 | Skyworks Solutions, Inc. | Systems and methods for magnitude and phase trimming |
| US11811438B2 (en) * | 2020-08-21 | 2023-11-07 | Skyworks Solutions, Inc. | Systems and methods for magnitude and phase trimming |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100388489C (en) | 2008-05-14 |
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