CN1797714A - 氧化硅制备方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 62
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000003792 electrolyte Substances 0.000 claims abstract description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 238000007743 anodising Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 27
- 230000003647 oxidation Effects 0.000 abstract description 22
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
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- 150000002500 ions Chemical class 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
- H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
Abstract
一种氧化硅制备方法,其包括以下步骤:提供一具有清洁抛光面的硅衬底;提供一注有电解液的阳极氧化槽;提供一铂片置于阳极氧化槽内电解液中作为阴极电极;将上述硅衬底置于阳极氧化槽内电解液中作为阳极电极,硅衬底的抛光面与阴极电极相对;以直流电源连接两电极,并以紫外线照射阳极氧化槽内的电解液反应预定时间;将硅衬底取出进行清洗、干燥、冷却后制得成品。
Description
【技术领域】
本发明涉及一种氧化硅制备方法,尤其涉及一种于硅衬底上制作二氧化硅层的阳极氧化制备方法。
【背景技术】
在微电子学领域,随着超大规模集成电路的发展,高质量的超薄栅极氧化层成为改善晶体管性能的关键。半导体制造工艺中超薄栅极氧化层主要是二氧化硅层,其直接形成于硅衬底。早期,超薄栅极氧化层的形成方法主要包括:热氧化法(Thermal Oxidation)、化学气相沉积法(Chemical VaporDeposition,CVD)、等离子增强化学气相沉积法(Plasma Enhanced ChemicalVapor Deposition,PECVD)以及液相沉积法(Liquid Phase Deposition,LPD)。其中,热氧化法需要在极高的温度环境下进行,对环境要求颇高。CVD,PECVD与LPD虽然能够克服以上缺点,却很难形成均一厚度的氧化硅层,且形成过程缓慢耗时。
阳极氧化法的发现使制作更高质量的栅极氧化层成为可能。1956年A.Uhlir与D.R.Turner首次借助于在氢氟酸(HF)溶液中对硅衬底进行阳极氧化制备得到多孔二氧化硅层,其制作方法是将一对电极置于HF溶液的工艺槽中,硅衬底被设置于两电极之间,并在电极之间通以电流,二氧化硅层即形成于硅衬底上。然而,此种阳极氧化形成二氧化硅的技术虽然较传统的热氧化以及化学气相沉积法技术有着均匀性更佳的优点,但该阳极氧化方法制程时间较长,同时,阳极的金属元素会溶解于HF溶液中并在二氧化硅的形成过程中沾污硅衬底,该二氧化硅层的纯度与密度都受到影响。
美国专利第5,736,454号揭示一种通过阳极氧化形成二氧化硅层以制作晶体管薄栅极氧化层的工艺方法,其将硅衬底作为阳极电极与金属铂质阴极电极同时置于电解液中,通入直流电源一段时间后经过阳极氧化反应形成二氧化硅层于硅衬底。由于其电解液是采用纯水,同时直接采用硅衬底作为阳极电极,该方法能够有效地克服以金属作为阳极溶解于HF电解液对形成二氧化硅层的影响。然而,由于纯水中离子能量不够,此种阳极氧化法的制程时间仍然较长,且由于离子活性低,其所形成的二氧化硅层与硅衬底之间的界面接触却会变差,容易脱落。
因此,提供一种制程时间短且能在硅衬底均匀形成稳定的二氧化硅层的氧化硅制备方法成为必要。
【发明内容】
为解决现有技术的技术问题,本发明的目的是提供一种制程时间短且能在硅衬底均匀形成稳定的二氧化硅层的氧化硅制备方法。
为实现本发明的目的,本发明提供一种氧化硅制备方法,其包括以下步骤:
提供一具有清洁抛光面的硅衬底;
提供一注有电解液的阳极氧化槽;
提供一铂片置于阳极氧化槽内电解液中作为阴极电极;
将上述硅衬底置于阳极氧化槽内电解液中作为阳极电极,硅衬底的抛光面与阴极电极相对;
以直流电源连接两电极,并以紫外线照射阳极氧化槽内的电解液反应预定时间;
将硅衬底取出进行清洗、干燥、冷却后制得成品。
其中,本发明的氧化硅制备方法所选用的电解液为去离子水,直流电源的电流密度为1~100μAcm-2,反应时间为5~30分钟,所形成的二氧化硅层的厚度为100~1000埃。
与现有技术相比较,本发明的氧化硅制备方法由于在进行阳极氧化时加以紫外线照射去离子水,使得去离子水电解后产生的离子能够获得额外的能量,并在与硅衬底的硅原子反应时能产生更完整的键结结构,减少二氧化硅层与硅衬底间界面的缺陷,进而能够减少漏电流,改善阳极氧化的质量。此外,由于紫外线的照射使得水中离子获得较高能量,亦会使得整个阳极氧化反应的速率增加,从而能够减少阳极氧化所需时间。
【附图说明】
图1是本发明氧化硅制备方法的流程示意图。
图2是本发明氧化硅制备方法所使用的设备的示意图。
【具体实施方式】
下面将结合附图及具体实施例对本发明进行详细说明。
请参阅图1,本发明提供一种氧化硅制备方法,其包括以下步骤:
步骤100是提供一具有一清洁抛光面的硅衬底,其可将硅衬底的一面抛光后用去离子水进行洗涤;
步骤200是提供一阳极氧化槽,阳极氧化槽内注入有电解液,该电解液为去离子水;
步骤300是提供一铂金属片电极置于阳极氧化槽内电解液中作为阴极电极,该铂金属片电极电性连接直流电源的负极;
步骤400是将上述硅衬底置于阳极氧化槽内电解液中作为阳极电极,其中,该硅衬底的抛光面与阴极电极相对,该硅衬底电性连接直流电源的正极;
步骤500是接通直流电源,同时以紫外线照射阳极氧化槽内的电解液以增加水中离子能量反应预定时间,其中,该直流电源输出的电流密度为1~100μAcm-2;
步骤600是将形成有二氧化硅层的硅衬底从阳极氧化槽中取出进行清洗、干燥、冷却后制得成品。
其中,整个阳极氧化反应的时间为5~30分钟,二氧化硅层的厚度为100~1000埃。
请参阅第二图,本发明于硅衬底制作二氧化硅层的阳极氧化方法是采用现有的阳极氧化设备10,其包括:一阳极氧化槽11,其中注入有电解液12,本发明的电解液是采用去离子水;一硅衬底14与铂片13分别作为阳极电极与阴极电极置于电解液12中,其中硅衬底14相对于铂片13的一面事先经过抛光清洗;一直流电源15,其正极电性连接硅衬底14,负极连接铂片13,该直流电源可以提供稳定的直流电,其电流密度为1~100μAcm-2。在二氧化硅层的形成过程中,以紫外线16均匀照射阳极氧化槽11中的电解液12,当直流电源15接通时,去离子水由于电解作用分解成氢离子(H+)与具有强氧化作用的氢氧根离子(OH-)。由于硅衬底14连接直流电源15的正极,氢氧根离子(OH-)受到硅衬底14上的正电压吸引而飘移过去,进而与硅衬底上的硅原子进行氧化反应,生成二氧化硅。
本发明的氧化硅制备方法由于在进行阳极氧化时加以紫外线照射去离子水,使得去离子水电解后产生的离子能够获得额外的能量,并在与硅衬底的硅原子反应时能产生更完整的键结结构,减少二氧化硅层与硅衬底间界面的缺陷,进而能够减少漏电流,改善阳极氧化的质量。此外,由于紫外线的照射使得水中离子获得较高能量,亦会使得整个阳极氧化反应的速率增加,从而能够减少阳极氧化所需时间。
Claims (5)
1.一种氧化硅制备方法,其包括以下步骤:
提供一具有清洁抛光面的硅衬底;
提供一注有电解液的阳极氧化槽;
提供一铂片置于阳极氧化槽内电解液中作为阴极电极;
将上述硅衬底置于阳极氧化槽内电解液中作为阳极电极,硅衬底的抛光面与阴极电极相对;
以直流电源连接两电极,并以紫外线照射阳极氧化槽内的电解液反应预定时间;
将硅衬底取出进行清洗、干燥、冷却后制得成品。
2.如权利要求1所述的氧化硅制备方法,其特征在于该电解液为去离子水。
3.如权利要求1所述的氧化硅制备方法,其特征在于该预定时间为5~30分钟。
4.如权利要求1所述的氧化硅制备方法,其特征在于该直流电源输出的电流密度为1~100μAcm-2。
5.如权利要求1所述的氧化硅制备方法,其特征在于该二氧化硅层的厚度为100~1000埃。
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US11/302,755 US20060141751A1 (en) | 2004-12-25 | 2005-12-14 | Method for making a silicon dioxide layer on a silicon substrate by anodic oxidation |
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CN104251878A (zh) * | 2014-09-09 | 2014-12-31 | 武汉品生科技有限公司 | 一种高通量、高灵敏度、表面激光解析质谱纳米靶板及其制作方法和应用 |
CN104701179A (zh) * | 2013-12-10 | 2015-06-10 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
CN104701180A (zh) * | 2013-12-10 | 2015-06-10 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
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US7365399B2 (en) * | 2006-01-17 | 2008-04-29 | International Business Machines Corporation | Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost |
TWI453864B (zh) * | 2010-11-12 | 2014-09-21 | Ind Tech Res Inst | 半導體結構及其製作方法 |
US10941501B2 (en) * | 2013-03-29 | 2021-03-09 | Analytical Specialties, Inc. | Method and composition for metal finishing |
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US5495121A (en) * | 1991-09-30 | 1996-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5331180A (en) * | 1992-04-30 | 1994-07-19 | Fujitsu Limited | Porous semiconductor light emitting device |
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US5616233A (en) * | 1996-05-01 | 1997-04-01 | National Science Council | Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature |
US5736454A (en) * | 1997-03-20 | 1998-04-07 | National Science Council | Method for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densification |
DE10007480A1 (de) * | 2000-02-18 | 2001-08-23 | Provera Ges Fuer Projektierung | Bipolare Elektrode mit Halbleiterbeschichtung und damit verbundenes Verfahren zur elektrolytischen Wasserspaltung |
US6887310B2 (en) * | 2002-07-17 | 2005-05-03 | National Taiwan University | High-k gate dielectrics prepared by liquid phase anodic oxidation |
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CN104701179A (zh) * | 2013-12-10 | 2015-06-10 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
CN104701180A (zh) * | 2013-12-10 | 2015-06-10 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
CN104701179B (zh) * | 2013-12-10 | 2019-06-04 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
CN104251878A (zh) * | 2014-09-09 | 2014-12-31 | 武汉品生科技有限公司 | 一种高通量、高灵敏度、表面激光解析质谱纳米靶板及其制作方法和应用 |
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