CN1792126A

CN1792126A - Double-sided wiring board and manufacturing method of double-sided wiring board

Info

Publication number: CN1792126A
Application number: CNA2004800137352A
Authority: CN
Inventors: 小田和范
Original assignee: Dai Nippon Printing Co Ltd
Current assignee: Dai Nippon Printing Co Ltd
Priority date: 2003-05-19
Filing date: 2004-05-18
Publication date: 2006-06-21

Abstract

Wiring layers (191, 192) are formed on both roughened base surfaces (110S) of a core base (110) by a semi-additive method, only one layer on each surface. The wirings of the wiring layers are electrically connected through a though hole (180) made in the core base. The through hole is made in the core base by using a laser and filled with an electrical connection portion (193) formed by plating. The both sides of the core base are coated with a solder resist (160), with a predetermined terminal portion (170) exposed. The outer surfaces of the through hole and the outer surfaces of the wiring layers are planalized by mechanical polishing, chemical-mechanical polishing, or the like.

Description

The manufacture method of double-sided wiring board and double-sided wiring board and multi-layer wire substrate

Technical field

The present invention relates under the state that wiring layer is set on the two sides of core base, is electrically connected and makes the terminal of regulation to expose the wiring layer on two sides, set the double-sided wiring board and the manufacture method thereof of the solder resist that covers this two sides via the through hole that is provided on the core base.

Background technology

In recent years, miniaturization day by day and lightweight for corresponding electronic equipment, in the printed base plate of multilayer (below be also referred to as multi-layer wire substrate), as comparing the printed base plate that to accommodate fine wiring pattern to high-density with fit type printed base plate in the past, developed various uses set wiring layer on the two sides of core base core substrate, will be on the two sides of this core base successively by insulating barrier, the combination layer that wiring layer constitutes carries out the stacked and compound mode that forms again, combined multi-layer wire substrate (below be also referred to as assembled substrate), its manufacture method is also various.

In addition, miniaturization for corresponding electronic equipment, requirement is carried out high-density installation to the semiconductor device that is loaded in the electronic equipment, as the requirement that the performance that is accompanied by semiconductor device improves, the flip-chip mode that semiconductor chip is constructed on the wired circuit boards such as being installed to mainboard with upside-down mounting just receives publicity.

Wherein, also carry out combined multi-layer wire substrate (assembled substrate) is used as intermediary layer, semiconductor chip is installed on this double-sided wiring board with flip-chip mode or wire-bonded mode.

For example as shown in Figure 9, semiconductor chip 20 upside-down mountings ground joint is loaded on the solder resist 12 of multi-layer wire substrate 10 with solder-bump 21 in the flip-chip mode, bottom filler 30 is filled in the space of 12 of solder resists of semiconductor chip 20 and multi-layer wire substrate 10, again by sealing resin 40 with semiconductor chip 20, solder-bump 21 and wiring part 11 sealings.

In addition, so-called flip-chip has been installed Au or has been called solder-bump on bare chip connection projection constitutes, and according to multitube pin, high-frequency characteristic and miniaturization requirement, employing face is arranged shape to terminal usually, installation property also is the thin space person.

Flint glass is by the method for IBM practicability in 1963, be that projection via flip-chip is connected with the cloth line electrode of circuit substrate, owing to carry out being electrically connected once with the chip fixture, so even the number of pins increase of chip also can not increase the needed time of assembling, can be described as can corresponding well multitube pin connected mode.

Here, as an example, the manufacture method of the core substrate in the assembled substrate in the past is described simply with reference to the accompanying drawings.

At first, on the copper sheet plywood 710 on the two sides that Copper Foil 712 is provided in core base 711, use rig to be mechanically formed through hole 715.(Fig. 7 (a))

Then, clean in the through hole 715, form copper coating 720, make conductionization in the through hole 715 (Fig. 7 (a)) by electroless plating thickness with regulation on whole, form copper coating 730 by electrolytic copper plating thickness with regulation on whole then, will electrically connect in the through hole 715.(Fig. 7 (b))

Then, fill the packing material 740 that is made of conductive metal material or non-conductive paste in through hole 715, the surface smoothing that carries out being undertaken by physical grinding is handled.(Fig. 7 (c))

Then, carry out film forming by dry film resist or aqueous resist and handle, the pattern exposure of stipulating, development and form the resist pattern.Then, as mask copper coating 730, non-cathode copper 720, Copper Foil 712 are carried out pattern etching with this resist pattern, the line layout (not shown) of form plated through-holes portion 750, wanting forms core substrate 760.(Fig. 7 (d))

Then, on the two sides of the core substrate of making like this 760 (Fig. 7 (d)), form high-density wiring, form the combination multi-layer wire substrate by combined method.This combination multi-layer wire substrate for example uses as the intermediary layer of semiconductor assembling usefulness as shown in Figure 8.

Multi-layer wire substrate 810 shown in Figure 8 can be made as follows.

Promptly, on the two sides of core substrate 760 (Fig. 7 (d)), form glass epoxy resin (Prepreg, preimpregnation material) and insulating barrier 851, the 851a of resin, use carbon dioxide gas laser or UV-YAG laser, on the assigned position of each insulating barrier 851,851a, form the hole portion of path, the plated through-holes 750 (Fig. 7 (d)) and the desirable position of line layout on the core substrate 760 are exposed.

Then, after cleaning, in the portion of hole, form conductive layer, on the exposed division that comprises above-mentioned hole portion, form path 871, form the 1st layer combination layer by electro deposition by electroless plating.

Repeat this operation, form a plurality of combination layers (in illustrative example on the two sides each 2 layers), produce multi-layer wire substrate 810.

Then, on the combination layer of mounting semiconductor chip side, what form that required wiring and mounting semiconductor chip use is connected lining 865.

Then, will connect, set solder resist 885 with lining 865,855 openings.

In this multi-layer wire substrate 810, semiconductor chip 890 can be loaded in connection that mounting semiconductor chip uses with on the lining 865 via metal bump such as scolding tin 891.

In addition, be provided with the rear side external connection terminals 880 of multi-layer wire substrate 810, can be loaded on the printed wiring board (mainboard etc.).

In addition, Fig. 8 is the figure that represents the part of multi-layer wire substrate briefly.

Certainly, semiconductor chip can be connected on the combination multi-layer wire substrate shown in Figure 8 in the wire-bonded mode, the intermediary layer of this multi-layer wire substrate as semiconductor assembling usefulness used.

Core substrate 760 by method formation in the past shown in Figure 7, owing to form through hole with power auger, form wiring with the metal covering etch, so as through-hole diameter/drill lip diameter, be difficult to do also forr a short time than the degree of 150 μ m/300 μ m, in addition, owing to form circuit by the metal covering etch, so, be difficult to carry out the following manufacturing of 50 μ m/50 μ m as circuit/at interval.

Owing to be the density that can not improve wiring only with such core substrate 760, thus in reality, by will being provided with 2 layers or 1 layer of combination layer as shown in Figure 8 as intermediary layer, the drawing of corresponding high-density wiring, wiring around boundary.But process number is more in the manufacturing of this combination multi-layer wire substrate, will directly cause cost to promote.

And in circuit board as shown in Figure 8, power consumption is bigger in through hole, is unaccommodated for the high-frequency purposes of needs.

With reference to 2002-299665 number (spy opens 0000-0000) of special hope.

As mentioned above, for the circuit board of the core substrate former state that will the metal covering etch by in the past forms as semiconductor assembling usefulness, wiring draw around aspect problem is arranged, do not have practicality.Under present situation, though will be formed with the circuit board of the combination multi-layer wire substrate of combination layer on the two sides of core substrate as assembling usefulness, it is miscellaneous but the manufacturing process of such combination multi-layer wire substrate is many, cost also uprises, and power consumption is bigger in through hole, purposes for the high-frequency input and output of needs is unaccommodated, and requiring to have can corresponding scheme.

Summary of the invention

The present invention is used for corresponding this problem, purpose provide a kind of can corresponding high-density installation and than in the past combination multi-layer wire substrate assembling circuit board in good aspect the productivity, as can also to solve high-frequency input and output power consumption problem.

Especially, purpose is can be provided at reliably to be difficult for generation when wire-bonded in the semiconductor chip assembling or flip-chip engage and laterally to slide, do not have the structure of the depression (being also referred to as groove) on the through hole of filled-type and can make the deviation of the wiring bed thickness assembling circuit board uniformly that becomes.

Simultaneously, purpose provides the circuit board manufacture method of making this circuit board.

Double-sided wiring board of the present invention is characterised in that to have: core base, two sides have the substrate surface that is roughened; Wiring layer is located on each substrate surface of core base; Each wiring layer is each other via the through hole conducting that is located on the core base.

Double-sided wiring board of the present invention is characterised in that, is filled with conducting portion in through hole.

Double-sided wiring board of the present invention is characterised in that, on each wiring layer of being located on the two sides of core base, so that the state that portion of terminal is exposed is provided with solder resist.

Double-sided wiring board of the present invention is characterised in that, the outer surface that is located at each wiring layer on the two sides of core base has been carried out planarization with the outer surface of the conducting portion of through hole.

Double-sided wiring board of the present invention is characterised in that the surface roughness of the substrate surface on the two sides of core base is that each 10 mean roughness RzJIS are in the scope of 2 μ m～10 μ m.

Double-sided wiring board of the present invention is characterised in that double-sided wiring board is the semiconductor-sealing-purpose double-sided wiring board.

Double-sided wiring board of the present invention is characterised in that, the portion of terminal of the one side side of core base is to be used for the connection lining that is connected with semiconductor chip, and the portion of terminal of another side side is to be used for the external connection terminals that is connected with external circuit.

Double-sided wiring board of the present invention is characterised in that the portion of terminal that is located on the core base two sides has from the inboard laterally the Ni coating and the Au coating of configuration successively.

In addition, the planarization here is to be used for making the outer surface of wiring portion of each wiring layer of the outer surface that comprises through hole all in the same plane, and is the plane.This planarization is undertaken by mechanical lapping or cmp.In encapsulation with under the situation of circuit board, in substrate, each surperficial position limit distance same plane ± 5 μ m with interior deviation range in.

In addition, 10 mean roughness RzJIS here are according to JIS B0601-2001 definition and expression.

Thus, on its average line direction, only extract datum length from roughness curve.To measure in the longitudinal magnification direction from the average line of this extraction part, from the average absolute of the absolute altitude on the mountain top of the high summit of the highest summit to the 5 and the average absolute summation of the absolute altitude of 5 low the lowest point from minimum the lowest point to the, to be called 10 mean roughness RzJIS with micron value of this summation of (μ m) expression, here, making datum length is 0.25mm.

In addition, in technique scheme, solder resist is set, opening can be set on solder resist, the portion of terminal zone of regulation is exposed by the state that on the two sides of core substrate, portion of terminal is exposed.And then, also can make the portion of terminal zone of regulation expose and the whole mounting semiconductor chip zone upper shed of circuit board solder resist is set.

Double-sided wiring board of the present invention is characterised in that, is provided with conductive coating on the through hole inner surface, is filled with resist in through hole.

Double-sided wiring board of the present invention is characterised in that, on each wiring layer of being located on the core base two sides, so that the state that portion of terminal is exposed is provided with solder resist.

Double-sided wiring board of the present invention is characterised in that the cross section of the through hole of core base has roughly trapezoidal shape.

Double-sided wiring board of the present invention is characterised in that the through hole of core base is to reduce to inner its aperture from an end, and the cross section has the 1st trapezoidal shape, and increases to its aperture of the other end internally, and the cross section has the 2nd trapezoidal shape.

Double-sided wiring board of the present invention is characterised in that the 1st trapezoidal shape of through hole has the shape bigger than the 2nd trapezoidal shape.

The manufacture method of double-sided wiring board of the present invention be used to make have the two sides have the core base of the substrate surface that is roughened and be located at wiring layer on each substrate surface of core base and each wiring layer each other via the double-sided wiring board that is located at the through hole conducting on the core base, it is characterized in that having: the Cu paper tinsel that will have a matsurface is layered in core base with the operation on the two sides of insulating resin film with its matsurface towards the mode crimping of insulative resin film side; Cu paper tinsel etching on the insulative resin film is removed, the matsurface of Cu paper tinsel is replicated on the two sides of insulative resin film, make the operation of core base; On this core base, form the operation of through hole by laser; Two sides and through hole inner surface to core base are implemented electroless plating, form the operation of electroless plating; On the two sides of core base, form the resist pattern, electroless plating as the energising layer, is implemented electrolysis Cu plating, form the operation of electrolysis Cu coating; After resist removed, the operation that will remove to the unwanted electroless plating that exposes outside by fast-etching.

The manufacture method of double-sided wiring board of the present invention is characterised in that, when forming electrolysis Cu coating, forms the conducting portion that is filled in the through hole by electrolysis Cu coating.

The manufacture method of double-sided wiring board of the present invention is characterised in that, before forming electroless plating, the through hole inner surface is implemented abatement processes.

The manufacture method of double-sided wiring board of the present invention is characterised in that, electrolysis Cu coating is carried out mechanical lapping or cmp, makes the planarization of electrolysis Cu coating.

The manufacture method of double-sided wiring board of the present invention is characterised in that also have: after by fast-etching electroless plating being removed, the photosensitive solder resist of coating on the electrolysis Cu coating on the two sides of core base forms the operation of solder mask; Solder mask is carried out mask exposure, development, the part of electrolysis Cu coating is exposed, form the operation of portion of terminal.

The manufacture method of double-sided wiring board of the present invention is characterised in that the matsurface that is crimped on the Cu paper tinsel on the insulative resin film has the surface roughness that 10 mean roughness RzJIS are 2 μ m～10 μ m.

The manufacture method of double-sided wiring board of the present invention is characterised in that, the configuration baffle plate of superfluous reflector laser not on a face of core base carries out laser radiation from another face of core base, forms through hole on core base.

The manufacture method of double-sided wiring board of the present invention is characterised in that, implements Ni plating and Cu plating on the portion of terminal surface successively.

The manufacture method of double-sided wiring board of the present invention is characterised in that, when forming electrolysis Cu coating, the dry film resist is set on the two sides of core base, carries out mask exposure, development, forms the resist pattern.

The manufacture method of double-sided wiring board of the present invention is characterised in that, also have: after by fast-etching electroless plating being removed, the photosensitive solder resist of coating forms solder mask on the electrolysis Cu coating on the two sides of core base, and fills the operation of through hole by insulative resin portion; Solder mask is carried out mask exposure, development, the part of electrolysis Cu coating is exposed, form the operation of portion of terminal.

Here, portion of terminal, welding disk, connection are done wiring portion with general designations such as wirings.When being called wiring, also have except connecting with the situation that also comprises portion of terminal, welding disk the wiring.

By making the planarization of electrolysis Cu coating, the face side that makes electrolysis Cu coating and is the plane all at grade.This planarization is by mechanical lapping or cmp, and position limit under the situation of assembling with circuit board, in substrate that each is surperficial is carried out with interior scope at distance above-mentioned same plane ± 5 μ m.

Double-sided wiring board of the present invention is by making this structure, can provide the power consumption aspect of can corresponding high-density installation and comparing productivity aspect and high-frequency input and output with combination multi-layer wire substrate in the past to assemble preferably and use circuit board.

Say that at length through hole has the through hole that is formed by laser on core base, the diameter of through hole is below the 150 μ m.

Certainly, also can form big through hole than 150 μ m.

In addition, when forming through hole by laser on core base, the aperture that can form the laser radiation side is big, with the less cross section trapezoidal shape in aperture of laser radiation side opposition side.When filling the through hole of core base by plating, to fill and become easy, the through hole zone also becomes flat condition by plating, so flat condition also can be made in the through hole zone, solder resist is provided on its two sides.As a result, by forming through hole by laser on core base, the operation during it is made improves, and also becomes good quality.

In addition, the through hole of through hole is filled by the conducting portion that is formed by plating, and the through hole zone also becomes flat condition, so portion of terminal (being also referred to as lining) can be arranged on via regions.

That is, can carry out the design of lining on through hole, it is big that the degree of freedom of design becomes, and can improve wiring density.

In core substrate in the past, use power auger in order to make through hole, can not make its diameter is below the 150 μ m.

In addition, the two sides roughening of core base can be made,,, fine, highdensity wiring can be made by form wiring by semi-additive process by the semi-additive process formation of connecting up.

And then, make the also planarization of through hole zone, do not applying solder resist and make under the situation of wiring layer multiple stratification, can carry out reliably path (hole partially) being configured on the smooth through hole by combined method.In addition, can carry out following multiple stratification method reliably: Copper Foil is layered in the wiring layer side of core base via insulating barrier, forms wiring layer by the photolithographic processes Copper Foil, and with projection as the bindiny mechanism between wiring layer.

Thus, when the semiconductor-sealing-purpose double-sided wiring board, in the time of can carrying out core substrate such shown in Fig. 7 (d) as the intermediary layer of semiconductor-sealing-purpose the wiring that can not carry out draw around.Can use double-sided wiring board replacement of the present invention to dispose the assembling circuit board of the combination multi-layer wire substrate of the combination layer more than 1 layer.

Particularly, the outer surface side of wiring portion of each wiring layer that comprises the outer surface of through hole has been implemented planarization by mechanical lapping or cmp.By like this, be difficult for taking place laterally to slide when wire-bonded in the semiconductor chip assembling or flip-chip joint, can make does not have the structure of (groove) that caves on the through hole of filled-type, and can make the deviation of wiring thickness become even.

In addition, as 10 average thickness RzJIS on the core base surface that is roughened of core base both sides, because the scope of 2 μ m～10 μ m is a realistic scale, so be preferred.

When RzJIS than 2 μ m hours, with wiring to connect airtight intensity insufficient, if make RzJIS big than 10 μ m, the concavo-convex shape that can influence connects up on core base surface then, become the major reason that hinders the wiring miniaturization, and the load in the manufacturing of electrolysis Cu paper tinsel also becomes big.

Double-sided wiring board of the present invention is compared with the combination multi-layer wire substrate, and is better aspect productive.

As double-sided wiring board of the present invention, enumerated on a face, to have being used for loading the connection lining of semiconductor chip, on another face, having the mode of the external connection terminals that is connected with external circuit of being used for by flip-chip mode or wire-bonded mode.

At this moment, can enumerate opening is set so that mode that the portion of terminal of regulation exposes is only arranged, expose in the portion of terminal zone that makes regulation and in the mode of the mounting semiconductor chip regional integration upper shed of circuit board.

Particularly, via regions is smooth, under the state that is unworthy of the handicapping solder flux, can carry out the loading of direct chip.

When loading direct chip,, connect so help flip-chip owing to there is not the restriction of chip side projection.When chip attachment, the bubble that through-hole side can not take place is involved in.

Usually, portion of terminal is implemented Ni coating, Au coating successively.

In addition, on double-sided wiring board of the present invention, the state person of solder resist is not set, can on its two sides, forms combination layer for its two sides.By like this, the wiring of core substrate becomes high density, also can connect up on through hole, so can constitute highdensity circuit board with the less number of plies compared with the past.

In the present invention, on core base, form through hole by laser.Because the positional precision of laser machine is fine, so can cut down the edge of the pad diameter of the position deviation that is used for containing pad and through hole, the pathization of cooperation through hole can make pad diameter below 250 μ m.

In addition, owing to known the concrete method of connecting airtight intensity that is used for guaranteeing resin bed and wiring, so can adopt half adding technology.

By on the two sides of core base, duplicating the shape of the matsurface that forms electrolysis Cu paper tinsel, can form the matsurface of wanting with the insulative resin layer.

Thus, in double-sided wiring board of the present invention, as minimum wire/at interval, affirmation can form 20 μ m/20 μ m.

The manufacture method of double-sided wiring board of the present invention is by making this structure, particularly, on the two sides of core base wiring being set, and via the coated through hole of filling that is provided on the core base, the wiring on core base two sides is electrically connected.And, under the state that the portion of terminal that makes regulation is exposed, set the solder resist that covers the core base two sides.Through hole has the through hole that forms by laser on core base, implement through hole plating in through hole, and by plating through hole is filled.On core base, form wiring by semi-additive process.

Thus, can provide can corresponding high-density installation and compare with combination multi-layer wire substrate in the past aspect the productivity, the quality aspect assembles the manufacture method with circuit board preferably.

At length say, duplicate the matsurface shape that forms electrolysis Cu paper tinsel on the two sides by the insulative resin layer used in core base, can form the matsurface of wanting.Fully guarantee to form wiring by semi-additive process with the intensity of connecting airtight of core base.

In addition, the less-restrictive of the applicable material of coarse surface forming method of above-mentioned core base can enlarge as the resin choice scope of core base with the insulative resin layer.

In addition, the through hole through hole forms on core base by laser.Through hole, is filled and is become easy when filling through hole by coating by its trapezoidal cross-sectional shape.And the surface in through hole zone also can form enough smoothly.

Particularly, after selecting the plating operation, remove resist before, perhaps after removing resist, unwanted electroless plating fast-etching removed before, carry out planarization by mechanical lapping or cmp.By this planarization, make the cross sectional shape planarization of wiring portion by selecting plating operation plating to form, lining portion, through-hole section.Particularly, for the outer surface of wiring portion, lining portion, through-hole section, can be suppressed at apart from the conplane deviation that departs from ± 5 μ m in.

Be the semi-cylindrical cross sectional shape in the outside, but it can be made essentially rectangular by wiring portion, the lining portion of selecting plating operation plating to form.In addition, the cross sectional shape of the through-hole section by selecting the filled-type that plating operation plating forms is that central portion caves in to substrate-side, but it can be made smooth.

Like this, by carrying out mechanical lapping or cmp, wire-bonded in the semiconductor chip assembling or flip-chip are difficult for when engaging taking place laterally to slide, and can eliminate the depression (groove) on the through hole of filled-type.And can make the deviation of wiring thickness become even.

Do not carrying out under the situation of mechanical lapping or cmp, respectively shown in Figure 10 (a), Figure 10 (b), Figure 10 (c), connect with connect up 910, the cross sectional shape of portion of terminal (being also referred to as lining) 920 outside face side be semi-cylindrical.At this moment, the cross sectional shape that comprises the through-hole section 930 of welding disk is that central portion caves in to substrate-side, and by these surface elements being carried out mechanical lapping or cmp, shown in Figure 10 (a1), Figure 10 (b1), Figure 10 (c1), the outer surface side that connects with wiring 910, portion of terminal (being also referred to as lining) 920, through-hole section 930 becomes flat condition respectively.

In addition, portion of terminal, welding disk, connection are done wiring portion with general designations such as wirings here, when being called wiring portion,, also comprise portion of terminal, welding disk except connecting with the wiring.

In addition, in the manufacture method of double-sided wiring board of the present invention, the depression on the via regions is less, and is special under the situation of having implemented mechanical lapping or cmp, can not produce the depression in the via regions, solder resist flatly can be provided on the two sides.Use the double-sided wiring board of making by this manufacture method, load thereon under the situation of semiconductor chip, can gassing do not enter between it and the chip and damage the reliability problems of semiconductor device.Therefore, can alleviate load in the production process.

Double-sided wiring board of the present invention is by making this structure, and can provide can corresponding high-density installation and compare with combination multi-layer wire substrate in the past assembling preferably aspect the productivity and use circuit board.

Say that at length through hole has the through hole that forms by laser on core base, its diameter is below the 150 μ m.

Certainly, also can form big through hole than 150 μ m.

In addition, by laser under the situation that forms through hole on the core base, can make the cross sectional shape of through hole form the aperture of laser radiation side big, with the less trapezoidal shape in aperture of laser radiation side opposition side.Therefore, in the time of in the through hole that solder resist is filled into core base, be easier to fill.In addition, also can cave in less, very flatly solder resist is provided on the two sides of circuit board in the through hole zone.As a result, by forming through hole by laser on core base, the operation during it is made is better, also can make high-quality face.

In core substrate in the past, in the through hole manufacturing, use power auger, can not make its diameter is below the 150 μ m.

In addition, the two sides roughening of core base can be formed wiring by semi-additive process.In addition, by form wiring by semi-additive process, can carry out manufacturing fine, highdensity wiring.

Thus, as under the situation of semiconductor-sealing-purpose double-sided wiring board, can carry out shown in Fig. 7 (d) such with core substrate during as the intermediary layer of semiconductor-sealing-purpose the wiring that can not carry out draw around.In addition, can use double-sided wiring board of the present invention to replace having set the encapsulation circuit board of the combination multi-layer wire substrate of combination layer more than 1 layer.

As 10 average thickness RzJIS on the core base surface that is roughened of core base both sides, because the scope of 2 μ m～10 μ m is a realistic scale, so be preferred.

Certainly, double-sided wiring board of the present invention is compared with the combination multi-layer wire substrate, and is better aspect productive.

In the present invention, on core base, form through hole by laser, because the positional precision of laser machine is fine, so can cut down the edge of the pad diameter of the position deviation that is used for containing pad and through hole, cooperate the pathization of through hole, can make pad diameter below 250 μ m.

The manufacture method of double-sided wiring board of the present invention can be made following double-sided wiring board: on the two sides of core base wiring is set, via the through hole that is provided on the core base, the wiring on core base two sides is electrically connected, and, under the state that the portion of terminal that makes regulation is exposed, be equipped with the solder resist that covers the core base two sides.Through hole has the through hole that forms by laser on core base, implement through hole plating in through hole, and then through hole is filled by above-mentioned insulating resin portion.On core base, form wiring by semi-additive process.

At length say, duplicate the shape of the matsurface that forms electrolysis Cu paper tinsel on the two sides by the insulative resin layer used in core base, can form the matsurface of wanting.Form wiring by semi-additive process.

In addition, the through hole through hole forms on core base by laser.Through hole, is filled and is become easy when being filled into solder resist in the through hole by its trapezoidal cross-sectional shape.And the surface in through hole zone also can form enough smoothly.

In addition, enlarged as the resin choice scope of core base with the insulative resin layer.

Multi-layer wire substrate of the present invention is characterised in that, have: double-sided wiring board, have the wiring layer on the two sides core base with the substrate surface that is roughened and each substrate surface that is located at core base, each wiring layer is each other via the through hole conducting that is located on the core base; Append circuit board, be located at a side of this double-sided wiring board via insulating resin portion; Append circuit board and have the two sides and have appending core base and being located at the wiring layer that appends on each substrate surface that appends core base of substrate surface, respectively append wiring layer and append the through hole conducting via being located to append on the core base each other.

Multi-layer wire substrate of the present invention is characterised in that, double-sided wiring board with append circuit board and be connected via projection.

Multi-layer wire substrate of the present invention is characterised in that, projection is located on the position corresponding to the through hole of double-sided wiring board.

Multi-layer wire substrate of the present invention is characterised in that, is filled with conducting portion in the through hole of double-sided wiring board.

Multi-layer wire substrate of the present invention is characterised in that, have: double-sided wiring board, have the wiring layer on the two sides core base with the substrate surface that is roughened and each substrate surface that is located at core base, each wiring layer is each other via the through hole conducting that is located on the core base; Append circuit board, be located at the both sides of this double-sided wiring board via insulating resin portion.

Multi-layer wire substrate of the present invention is characterised in that, is respectively appending on the wiring layer, is provided with the insulating resin portion of appending so that append the state that portion of terminal exposes.

Description of drawings

Fig. 1 (a) is the phantom of the 1st execution mode of expression double-sided wiring board of the present invention.

Fig. 1 (b) is the figure of the variation of the 1st execution mode shown in the presentation graphs 1 (a).

Fig. 2 (a)～Fig. 2 (g) is the operation cutaway view of a part of the manufacturing process of the 1st execution mode shown in the presentation graphs 1 (a).

Fig. 3 (a)～Fig. 3 (d) is the then operation cutaway view of the operation of Fig. 2 (a)～Fig. 2 (g) of expression.

Fig. 4 (a)～Fig. 4 (f) is the operation cutaway view of a part of the manufacturing process of expression comparative example.

Fig. 5 (a)～Fig. 5 (g) is the then operation cutaway view of the operation of Fig. 4 (a)～Fig. 4 (f) of expression.

Fig. 6 (a)～Fig. 6 (d) is the then operation cutaway view of the operation of Fig. 5 (a)～Fig. 5 (g) of expression.

Fig. 7 (a)～Fig. 7 (d) is the operation cutaway view of the manufacture method of core substrate in the past.

Fig. 8 is the summary cutaway view of multi-layer wire substrate in the past.

Fig. 9 is the summary cutaway view that the semiconductor assembling of multi-layer wire substrate has been used in expression.

Figure 10 (a)～Figure 10 (c) is the figure of the section shape before the expression mechanical lapping.

Figure 10 (a1)～Figure 10 (c1) is the figure that represents the section shape after the corresponding mechanical lapping respectively.

Figure 11 (a) is the phantom of the 2nd execution mode of expression double-sided wiring board of the present invention.

Figure 11 (b) is the figure of the variation of the 2nd execution mode example shown in expression Figure 11 (a).

Figure 12 (a)～Figure 12 (g) is the operation cutaway view of a part of the manufacturing process of the execution mode example shown in expression Figure 11 (a).

Figure 13 (a)～Figure 13 (d) is the then operation cutaway view of the operation of Figure 12 (a)～Figure 12 (g) of expression.

Figure 14 (a)～Figure 14 (f) is the operation cutaway view of a part of the manufacturing process of expression comparative example.

Figure 15 (a)～Figure 15 (d) is the then operation cutaway view of the operation of Figure 14 (a)～Figure 14 (f) of expression.

Figure 16 is the figure that expression is located at the variation of the through hole on the core base.

Figure 17 is the figure of expression multi-layer wire substrate of the present invention.

Figure 18 is the figure of the another kind of multi-layer wire substrate of expression.

Embodiment

The 1st execution mode of the present invention is described with reference to the accompanying drawings.

Fig. 1 (a) is the phantom of the 1st execution mode of expression double-sided wiring board of the present invention; Fig. 1 (b) is the figure of the variation of the 1st execution mode shown in the presentation graphs 1 (a); Fig. 2 is the operation cutaway view of a part of the manufacturing process of the 1st execution mode shown in the presentation graphs 1 (a); Fig. 3 is the then operation cutaway view of the operation of figure of expression; Fig. 4 is the operation cutaway view of a part of the manufacturing process of expression comparative example; Fig. 5 be expression then Fig. 4 (the operation cutaway view of operation; And then Fig. 6 is the then operation cutaway view of the operation of Fig. 5 of expression; Figure 10 is the figure of section shape that is used for illustrating the each several part of mechanical lapping operation; Section shape before Figure 10 (a), Figure 10 (b), Figure 10 (c) expression mechanical lapping; Figure 10 (a1), Figure 10 (b1), Figure 10 (c1) represent the section shape after the corresponding mechanical lapping respectively.

At Fig. 1～Fig. 6, among Figure 10, label 110 is a core base, label 110H is the through hole of through hole, label 110S is a substrate surface, label 115 is electrolysis Cu paper tinsel, label 120 is a laser, label 130 is an electroless plating, label 140 is a resist, label 145 is an opening, label 150 is electrolysis Cu coating, label 160 is a solder resist, label 165 is an opening, label 170 is for connecting with lining (also singly being called " portion of terminal "), label 170a is the outside lining (also singly being called " portion of terminal ") that connects, label 171 is a Ni coating, label 172 is an Au coating, label 175,175a is a portion of terminal, label 180 is a through hole, label 191,192 are wiring, and label 193 is (through hole) conducting portion, label 210 is a core base, label 211H is (through hole) through hole, and label 215a is an electrolysis Cu paper tinsel, and label 215 is the electrolysis Cu paper tinsel by the etching attenuate, label 230,235 is electroless plating, label 240,245 are electrolysis Cu coating, and label 250 is insulating properties printing ink hardening thing (a resin printing ink hardening thing), and label 260 is a resist, label 265 is an opening, label 270 is a solder resist, and label 275 is an opening, and label 280 is a through hole, label 291,292 are wiring, label 293 is the conducting portion of through hole, label 295,295a is a portion of terminal, and label 296 is a Ni coating, label 297 is a gold plate, label 910,910a is for connecting with wiring, label 920,920a is portion of terminal (being also referred to as lining), label 930,930a is a through-hole section, label 931 is depression (being also referred to as groove), label 932,932a is a shoulder, and label 935 is (through hole) conducting portion, and label 950 is an insulating substrate portion.

The example of the 1st execution mode of double-sided wiring board of the present invention at first, is described according to Fig. 1 (a).

Double-sided wiring board of the present invention has: core base 110 has the two sides by the substrate surface 110S of asperitiesization; Wiring layer 191,192 is located on each substrate surface 110S of core base 110.Promptly, double-sided wiring board is by aftermentioned Fig. 2～operation manufacturing shown in Figure 3, constitute, on the substrate surface 110S of the asperitiesization of the both sides of core base 110, only be provided with 1 layer of wiring layer 191,192 that forms by semi-additive process respectively, via the through hole 180 that constitutes by the through hole 110H that is located on the core base 110 with the wiring layer 191,192 on the two sides of above-mentioned core base 110, promptly connect up and 191 electrically be connected with 192.In addition, portion of terminal 170, the 170a that stipulates is connected with wiring layer 191,192,, solder resist 160 is set making portion of terminal 170,170a under the state that exposes on the two sides of core base 110.This double-sided wiring board is the double-sided wiring board of semiconductor-sealing-purpose, in semiconductor packages as shown in Figure 9, replaces using as the multi-layer wire substrate 10 of intermediary layer.

Through hole 180 is made of the through hole 110H of the core base 110 that forms with laser, implements through hole plating in through hole 110H, fills through hole 110H by this through hole plating conducting portion 193 is set.In addition, be formed with the opening 165 of solder resist 160 corresponding to this conducting portion 193.

As mentioned above, on a face (faces of 191 1 sides that connect up) of core base 110, be provided with and connect lining (portion of terminal) 170, be used for loading semiconductor chip 20 via solder-bump 21 by flip-chip mode or wire-bonded mode, on another face (faces of 192 1 sides that connect up), be provided with external connection terminals (portion of terminal) 170a, be used for being connected with external circuit.

Certainly, can freely select to connect lining 170 and external connection terminals 170a is located on which face of core base 110.

Connect lining (portion of terminal) 170, external connection terminals (portion of terminal) 170a has at the electrolysis Cu coating 150 that forms on the electroless plating 130 and be located on this electrolytic copper plating layer 150, cover the opening of solder resist 160 and the Ni coating 171 and the Cu coating 172 that form successively.

In addition, 10 mean roughness RzJIS on the substrate surface 110S surface of core base 110 are the scope of 2 μ m～10 μ m.Adopt this scope by the RzJIS that makes substrate surface 110S, can improve wiring 191,192 the intensity of connecting airtight, can reach the miniaturization of wiring for substrate surface 110S.Therefore, also can be described as practical level from its manufacture view.

As core base 110, employing has suitably been sneaked into glass fabric, aromatic polyamide nonwoven fabrics, liquid crystal polymer nonwoven fabrics in stable on heating thermmohardening type insulative resin layer, the base material of porous polyfluortetraethylefilm cloth (for example trade name section Adikes has the mesh plastic film) etc.

As resin bed, can enumerate cyanate resinoid, BT resin (resin that constitutes by bismaleimides and triazine), epoxy resin, PPE (polyphenylene oxide) etc.

According to test, using under the situation of Hitachi's system 679F series (cyanate resinoid) as resin bed, the Rz of the substrate surface 110S of core base 110 is 5 μ m, peel strength is 800g/cm (JISC5012-1987 8.1).

As hereinafter described, the surperficial 110S of the resin bed of core base 110 with the plating face one side thermo-compressed of electrolysis Cu paper tinsel 115 (Fig. 2) on core base 110, its sclerosis is formed.The substrate surface 110S that the rough form of the plating face of electrolysis Cu paper tinsel 115 copies to core base 110 goes up (with reference to the operation of the illustrated Fig. 2～Fig. 3 in back), and the substrate surface 110S of core base 110 improves with the connecting airtight property of wiring 191,192.

Through hole 180 passes through CO usually by constituting by the through hole 110H of source, laser apparatus on core base 110 ₂Laser or UV laser form the through hole 110H that through hole forms usefulness on core base 110, the diameter of through hole 110H is below the 150nm.

The method for plating that the known blind via hole of electrolysis Cu coating 150 usefulness of the conductive part 193 of formation wiring 191,192, through hole etc. is filled usefulness forms.

Wiring portion 191,192 considers from the aspect of conductivity, be preferably about thickness 5 μ m～30 μ m, but fill in order to carry out plating reliably in the mill, be that the aperture of the laser radiation side of 100 μ m, through hole 110H is that the aperture of 100 μ m, opposition side is under the situation of 70 μ m at the thickness of core base 110 for example, the thickness of wiring 191,192 is generally about 10 μ m～30 μ m.

Electroless plating 130 forms by known method such as non-electrolysis Ni plating, non-electrolysis Cu platings, is as the energising layer when the electrolysis Cu plating 150 of the conducting portion 193 of implementing to be used for to form through hole.Electroless plating 130 is the thickness of regulation, so long as can not damage other parts and the thickness removed easily is just passable by fast-etching.

Double-sided wiring board shown in Fig. 1 (b) is in the double-sided wiring board shown in Fig. 1 (a), does not have the Ni coating 171 of terminal 170,170a, the state of Au coating 172, according to circumstances, can dispatch from the factory under this state.

About each component part, identical with the double-sided wiring board shown in Fig. 1 (a), omit its explanation.

Then, according to the manufacture method of the double-sided wiring board of the 1st example shown in Fig. 2, Fig. 3 key diagram 1 (a).

In addition, replace explanation in the present invention with this to the execution mode of the manufacture method of double-sided wiring board.

At first, on the two sides of the insulative resin layer (insulative resin film) 110 that core base is used, it is stacked that electrolysis Cu paper tinsel 115 by the matsurface that respectively its electrolysis plating formed makes its matsurface connect towards resin bed 110 side pressures, and the processing of making 3 layers of structure is standby with base material 110a.(Fig. 2 (a))

Here, use thermmohardening type resin bed as insulative resin film 110, with electrolysis Cu paper tinsel 115 thermo-compressed on the two sides of resin film 110.

As the material of core base 110, adopt the material of in insulative resin, suitably having sneaked into glass fabric, aromatic polyamide nonwoven fabrics, liquid crystal polymer nonwoven fabrics, porous polyfluortetraethylefilm cloth (for example trade name section Adikes has the mesh plastic film) etc.

As insulative resin, adopt cyanate resinoid, BT resin (resin that constitutes by bismaleimides and triazine), epoxy resin, PPE (polyphenylene oxide) etc.

Then, electrolysis Cu paper tinsel 115 etchings on the two sides of insulative resin film 110 are removed, form and have the core base 110 of the substrate surface 110S that duplicates the surface state that has formed electrolysis Cu paper tinsel 115.(Fig. 2 (b))

The etching of electrolysis Cu paper tinsel 115 is carried out with ferric sesquichloride solution or copper chloride solution or alkaline etching liquid.

After cleaning, irradiating laser 120 selectively, form the through hole 110H that through hole forms usefulness on core base 110.(Fig. 2 (c))

As laser 120, cooperate the material of core base 110 and adopt CO ₂Laser or UV laser.

On a face of core base 110, set the baffle plate 120a of the black etc. of reflector laser 120 not superfluously, carry out the irradiation of laser 102 from another face.Thus, on core base 110, form through hole 110H by laser.At this moment, make the aperture of through hole 110H of laser 120 irradiation sides bigger, make with the aperture of the irradiation side opposition side of laser 120 lessly, can make the cross section of through hole 110H form trapezoidal shape.

For example, using CO ₂Under the situation of laser, using on the thick resinoid core base 110 of cyanate of 100 μ m, the aperture that makes the irradiation side can be set is 100 μ m, make the aperture with the irradiation side opposition side of laser 120 is the through hole 110H of 70 μ m.

Thus, when the electrolysis plating 150 that will after this carry out was filled among the through hole 110H of core base 110, it is easy that the filling of electrolysis plating 150 becomes.And then, when on the two sides of base material 110, solder resist 160 being set, make through hole 110H zone become flat condition, solder resist 160 is set.

In addition, in core substrate in the past, in the through hole manufacturing, use power auger, its diameter can not be accomplished below the 150 μ m, and according to the present invention, owing on core base 110, form through hole 110H by laser, so can form the through hole 110H in the following aperture of 150 μ m.

The minimum-value aperture of through hole 110H can reach under the situation of carbon dioxide laser about 80 μ m, can reach under the situation of UV-YAG laser about 25 μ m.

Then, carry out abatement processes that the process residues in the through hole 110H of core base 110 is removed, on the surface of the whole core base 110 on the surface that comprises through hole 110H, implement electroless plating then and apply, form electroless plating 130 as the energising layer.(Fig. 2 (d))

Apply non-electrolysis Cu plating, non-electrolysis Ni plating that can application of known as electroless plating.

Then, opening 145 is set on the two sides of core base 110,, forms resist 140 to expose the regulation zone of the conducting portion 193 that is used for forming wiring 191,192 or through hole 180.(Fig. 2 (e))

Then, electroless plating 130 as the energising layer, is implemented electrolysis Cu plating, form the conducting portion 193 of wiring 191,192 and filling through hole 110H by electrolysis Cu plating 150 selectively.(Fig. 2 (f))

Electroless plating 130 forms by known method such as non-electrolysis Ni plating, non-electrolysis Cu platings, thickness with the energising layer when being used for forming the electrolysis Cu coating 150 of wiring 191,192 as formation is not so long as can damage other parts and the thickness easily removed is just passable by the fast-etching that carries out later.

As resist 140, so long as have the resolution wanted, have anti-plating, the property handled is good just passable, have no particular limits.

Because the dry film resist is handled easily, so adopt it as resist 140 usually.

Then, remove resist 140 (Fig. 2 (g)), the unwanted electroless plating 130 that will expose by fast-etching is removed (Fig. 3 (a)) then.

As the etching solution that is used for removing electroless plating 130, can list water sulfuric acid, persulfuric acid, hydrochloric acid, nitric acid, cyanogen class, organic class etching solution.

Then, the photosensitive solder resist of coating on the two sides of core base 110 forms solder mask layer 160 on the two sides of core base 110.(Fig. 3 (b))

Then, the photomask of use regulation etc. carries out mask exposure, development to solder mask layer 160, and portion of terminal 170,170a are exposed.(Fig. 3 (c))

Then, on portion of terminal 170,170a surface, form Ni coating 171, Au coating 172 successively.(Fig. 3 (d)).Like this, formed this routine double-sided wiring board.

In addition, the comparative example of following double-sided wiring board as the double-sided wiring board shown in Fig. 1 (a) described, described double-sided wiring board and core substrate in the past shown in Figure 7 are same, on the two sides of core base, only set 1 layer of wiring, and through hole is set on base material by power auger, implement through hole plating, the wiring on two sides is electrically connected.In this case, the through hole that insulating properties printing ink (resin printing ink) is filled into core base forms with in the through hole, covers with the wiring of solder resist with the two sides of core base.According to Fig. 4～Fig. 6 assembling double-sided wiring board as this comparative example is described simply.

At first, preparation by with electrolysis Cu paper tinsel 215a thermo-compressed, be layered in have 3 layers of structure on the two sides of core base 210, with processing usefulness base material 210a (Fig. 4 (a)) identical shown in Fig. 2 (a).By the electrolysis Cu paper tinsel 215a on the two sides that is located at core base 210 is carried out etching, it is thinned to the thickness (Fig. 4 (b)) of regulation.Then, (Fig. 4 (c), through milled processed, the abatement processes that is used for removing burr, it is deposited to implement electroless plating, and electroless plating 230 (Fig. 4 (d)) is set to offer the through hole 211H that through hole uses with power auger on base material 210a in processing.Then, electroless plating as energising layer 230, is implemented electrolysis Cu plating, electrolysis Cu coating 240 is set on the two sides of core base 210, in through hole 211H, form conducting portion 293.(Fig. 4 (e))

Then, from the two sides side or the single face side of core base 210, the through hole 211H that through hole is used with the insulating properties printing ink (resin printing ink) of thermmohardening buries, and heating makes its sclerosis, with insulating properties printing ink hardening thing 250 through hole that through hole forms usefulness is filled.(Fig. 4 (f))

Then, after insulating properties printing ink hardening thing 250 is ground (Fig. 5 (a)), etch partially from the two sides of core base 210, electro deposition 240, the electroless plating 230 of the surface element of core base 210 are removed (Fig. 5 (b)), to grinding, make it become smooth again from the outstanding dielectric ink hardening thing 250 in the surface of the electrolysis Cu paper tinsel 215 of attenuate.(Fig. 5 (c))

Then, on whole surface, the two sides of core base 210, implement electroless plating and apply, electroless plating 235 (Fig. 5 (d)) is set, implement electrolysis Cu plating again electrolysis Cu coating 245 is set, this electrolysis Cu coating is become be used for the thickness of the regulation that forms wiring.(Fig. 5 (e))

Then, on the two sides of core base 210, in the regulation zone opening 265 is set respectively, forms the resist 260 (Fig. 5 (f)) that etch resistant is used.Then (Fig. 5 (g)) removed in electrolysis Cu paper tinsel 215 etchings of the electrolysis Cu coating 245 that will expose from the opening 265 of resist 260 by etching solutions such as ferric sesquichloride solution, electroless plating 235, attenuate.Then, resist 260 is removed (Fig. 6 (a)), applied photosensitive solder resist 270 from the two sides of core base 210.(Fig. 6 (b)

Then, form regional 275 upper sheds (Fig. 6 (c)) at the terminal of solder resist 270, on the electrolysis Cu coating 245 that exposes, set gradually Ni coating 296, Au coating 297, like this, just can access the double-sided wiring board of comparative example by photoetching process.(Fig. 6 (d))

But the wiring of this manufacture method forms, and is to prepare in advance and the electrolysis Cu paper tinsel 215 of attenuate, electroless plating 235,245 etchings of electrolysis Cu coating and connecting up forms.So this manufacture method is the metal covering etch that forms wiring portion based on etching basically, form and the same wiring of method shown in Figure 7, can not corresponding miniaturization, the densification that connects up.

Thereby, as the circuit on the double-sided wiring board/at interval, 50 μ m/50 μ m manufacturing below horizontal is very difficult.

In addition, owing to form the through hole 211H that through hole forms usefulness by power auger on core base 210, its diameter becomes greatly.Therefore, same with the core substrate in the past shown in Fig. 7 (d), as through-hole diameter/drill lip diameter, can not do forr a short time than the level of 150 μ m/350 μ m.

In addition, the manufacturing process head of combination multi-layer wire substrate is and miscellaneous, and cost also uprises, and power consumption is bigger in through hole, is unaccommodated for the purposes that needs the high frequency input and output.

That is, in the double-sided wiring board of comparative example, have above-mentioned variety of issue, can not be corresponding to the assembling substrate of high-density installation.

Then, enumerate the variation of the execution mode of double-sided wiring board of the present invention.

The double-sided wiring board of variation is in Fig. 1 to Fig. 3, by mechanical lapping or cmp, the outer surface of the through hole 110H in the core base 110 and the outer surface of each wiring layer 191,192 has been carried out planarization.

By mechanical lapping or cmp, make the surface of through hole 110H and the outer surface side planarization of each wiring layer 191,192.By making this structure, wire-bonded or the flip-chip of double-sided wiring board in semiconductor chip assembling is difficult for taking place laterally to slide when engaging, can make the structure of the depression (groove) on the through hole that does not have filled-type, and can make the deviation of wiring thickness become even.

Be effective being used as under the situation of assembling substrates especially.

Variation as the manufacture method of double-sided wiring board, enumerated following method: for example at Fig. 2, in the manufacture method of double-sided wiring board shown in Figure 3, before after selecting the plating operation, the resist pattern being removed (corresponding to the state of Fig. 2 (f)), perhaps after removing the resist pattern and before unwanted electroless plating fast-etching is removed (corresponding to Fig. 2 (g)), perhaps after unwanted electroless plating fast-etching is removed (corresponding to Fig. 3 (a)), in order to make electrolysis Cu coating 150 planarizations, carry out mechanical lapping or cmp by selecting the plating operation to form selectively; Handle beyond the grinding, identical with above-mentioned manufacture method, omit its explanation at this.

As mechanical lapping, use polishing to grind, during cmp (being also referred to as CMP) is used in and respectively handles recently.

By making 150 planarizations of electrolysis Cu coating, the flatness of electrolysis Cu coating 150 can be limited in ± deviation range of (0.05～0.5 μ m) in.

In addition, as the end point determination mode of grinding, judgment mode by turning moment, the judgment mode by electrostatic capacitance etc. are arranged.

As variation, double-sided wiring board that also can be shown in Fig. 1 (b) is such, and Ni coating and Au coating are set on portion of terminal.According to circumstances, can under this state, double-sided wiring board be dispatched from the factory.

This manufacture method is in the manufacture method of the double-sided wiring board shown in Fig. 1 (a), portion of terminal 170,170a is not implemented the method for plating.

The present invention as mentioned above, can provide can corresponding high-density installation and better aspect productivity than combination multi-layer wire substrate in the past, as can also to solve the power consumption problem of high-frequency input and output assembling circuit board.

Particularly, can be provided at reliably and be difficult for deviation that generation laterally slided, do not have the structure of the depression (groove) on the filled-type through hole and can make wiring thickness assembling circuit board uniformly when wire-bonded in the semiconductor chip assembling or flip-chip engage.

Simultaneously, can provide the circuit board manufacture method of making this circuit board.

By the miniaturization of pad and the miniaturization of circuit, in the past, 1 layer of wiring layer that forms with the metal covering etch was set respectively on the two sides of core base, the additive process with plating formation wiring layer is provided with 1 layer of wiring layer on each wiring layer again.Have such structure, be used for CSP and stacked package.Can be with the double-sided wiring board in the past of 4 layers of Wiring structure, the double-sided wiring board of the present invention that is used in 2 layers of Wiring structure that set 1 layer of wiring layer on the core base two sides respectively substitutes.

Double-sided wiring board of the present invention is compared with 4 layers of Wiring structure in the past, and simple structure, its worker ordinal number have also reduced, aspect productivity, the power consumption aspect of high-frequency input and output is all fine.

The 2nd execution mode

The 2nd execution mode of the present invention is described with reference to the accompanying drawings.

Figure 11 (a) is the phantom of the 2nd execution mode example of expression double-sided wiring board of the present invention, Figure 11 (b) is the variation of the execution mode example shown in Figure 11 (a), Figure 12 is the operation cutaway view of a part of the manufacturing process of the execution mode shown in expression Figure 11 (a), Figure 13 is the then operation cutaway view of the operation of Figure 12 of expression, Figure 14 is the operation cutaway view of a part of the manufacturing process of expression comparative example, and Figure 15 is the then operation cutaway view of the operation of Figure 14 of expression.

In Figure 11～Figure 15, label 110 is a core base, label 110H is the through hole of through hole, label 110S is a substrate surface, label 115 is electrolysis Cu paper tinsel, label 120 is a laser, label 130 is an electroless plating, label 140 is a resist, label 145 is an opening, label 150 is electrolysis Cu coating, label 160 is a solder resist, and label 165 is an opening, and label 170 is for connecting with lining (also singly being called " portion of terminal "), label 170a is the outside lining (also singly being called " portion of terminal ") that connects, label 171 is a Ni coating, and label 172 is an Au coating, label 175,175a is a portion of terminal, label 180 is a through hole, label 180a is that through hole forms the zone, label 191,192 are wiring, and label 193a is the conducting portion of through hole, label 210 is a core base, label 211H is the through hole of through hole, and label 215a is an electrolysis Cu paper tinsel, and label 215 is the electrolysis Cu paper tinsel by the etching attenuate, label 230 is an electroless plating, label 240 is electrolysis Cu coating, and label 250 is a resist, and label 255 is an opening, label 260 is a solder resist, label 261 is depression, and label 265 is an opening, label 270,270a is a portion of terminal, label 271 is a Ni coating, label 272 is a gold plate, and label 280 is a through hole, and label 280a is that through hole forms the zone, label 291,292 are wiring, and label 293a is the conducting portion of through hole.

The 2nd execution mode example of circuit board of the present invention at first, is described according to Figure 11 (a).

Double-sided wiring board of the present invention has: core base 110 has the two sides by the substrate surface 110S of asperitiesization; Wiring layer 191,192 is located on each substrate surface 110S of core base 110.Promptly, double-sided wiring board is by aftermentioned Figure 12～operation manufacturing shown in Figure 13, constitute, only be provided with 1 layer of wiring layer 191,192 that is formed by semi-additive process respectively on the substrate surface 110S of the asperitiesization of the both sides of core base 110, the through hole 180 that constitutes via the through hole 110H that is located on the core base 110 is with the wiring layer 191,192 of the both sides of above-mentioned core base 110, promptly connect up and 191 electrically be connected with 192.In addition, portion of terminal 170, the 170a that stipulates is connected with wiring layer 191,192, under the state that exposes on the two sides of core base 110, solder resist 160 is set at the portion of terminal 170 that makes regulation, 170a.This double-sided wiring board is the double-sided wiring board of semiconductor assembling usefulness, in semiconductor packages as shown in Figure 9, replaces using as the multi-layer wire substrate 10 of intermediary layer.

Through hole 180 is made of the through hole 110H of the core base of offering with laser 110, implements through hole plating and form conducting portion 193a in through hole 110H, fills through hole 110H by solder resist 160 again.

As mentioned above, on a face (faces of 191 1 sides that connect up) of core base 110, be provided with and connect lining (portion of terminal) 170, be used for being connected with semiconductor chip by flip-chip mode or wire-bonded mode, on another face (faces of 192 1 sides that connect up), be provided with external connection terminals (portion of terminal) 170a, be used for being connected with external circuit.

Connect lining (portion of terminal) 170, external connection terminals (portion of terminal) 170a has at the electrolytic copper plating layer 150 that forms on the electroless plating 130 and be located on this electrolytic copper plating layer 150, cover Ni coating 171 and Cu coating 172 that the opening ground of solder resist 160 forms successively.

As core base 110, adopt and in stable on heating thermmohardening type insulative resin layer, suitably to have sneaked into glass fabric, aromatic polyamide nonwoven fabrics, liquid crystal polymer nonwoven fabrics, section's Adikes has the base material of mesh plastic film etc.

As resin bed, can enumerate cyanate resinoid, BT resin, epoxy resin, PPE (polyphenylene oxide) etc.

According to test, using under the situation of Hitachi's system 679F series (cyanate resinoid) as resin bed, the RzJIS of the substrate surface 110S of core base 110 is 5 μ m, peel strength is 800g/cm (JISC5012-19878.1).

As hereinafter described, the surperficial 110S of the resin bed of core base 110 with the coating face side thermo-compressed of electrolysis Cu paper tinsel 115 (Figure 12) on core base 110, its sclerosis is formed.The substrate surface 110S that the rough form of the plating face of electrolysis Cu paper tinsel 115 (Figure 12) is copied to core base 110 goes up (with reference to the operation of the illustrated Figure 12～Figure 13 in back), and the substrate surface 110S of core base 110 improves with the connecting airtight property of wiring 191,192.

Through hole 180 passes through C0 usually by constituting by the through hole 110H of source, laser apparatus on core base 110 ₂Laser or UV laser form the through hole 110H that through hole forms usefulness on core base 110, the diameter of through hole 110H is below the 150nm.

The known electrolysis Cu of the electrolysis Cu coating 150 usefulness method for plating of the conductive part 193 of formation wiring 191,192, through hole etc. forms, and from the aspect of conductivity, its thickness is about 5 μ m～30 μ m.

Electroless plating 130 forms by known method such as non-electrolysis Ni plating, non-electrolysis Cu platings, is as the layer of switching on when implementing electrolysis Cu plating for the conducting portion 193a that forms through hole.Electroless plating 130 is the thickness of regulation, so long as can not damage other parts and the thickness removed easily is just passable by fast-etching.

Double-sided wiring board shown in Figure 11 (b) is in the double-sided wiring board shown in Figure 11 (a), does not have the Ni coating 171 of terminal 170,170a, the state of Au coating 172, according to circumstances, can dispatch from the factory under this state.

About each several part, identical with the double-sided wiring board shown in Figure 11 (a), omit its explanation.

The manufacture method of the double-sided wiring board shown in Figure 11 (a) then, is described according to Figure 12, Figure 13.

At first, on the two sides of the insulative resin layer (insulative resin film) 110 that core base is used, it is stacked that electrolysis Cu paper tinsel by the matsurface that respectively its electrolysis plating formed makes its matsurface connect towards the resin bed side pressure, and the processing of making 3 layers of structure is standby with base material 110a.(Figure 12 (a))

Here, use thermmohardening type resin bed as insulative resin film 110, with electrolysis Cu paper tinsel thermo-compressed on the two sides of resin film 110.

As the material of core base 110, adopt and in insulative resin, suitably to have sneaked into the material that glass fabric, aromatic polyamide nonwoven fabrics, liquid crystal polymer nonwoven fabrics, section's Adikes have mesh plastic film etc.

As insulative resin, adopt cyanate resinoid, BT resin, epoxy resin, PPE (polyphenylene oxide) etc.

Then, electrolysis Cu paper tinsel 115 etchings on the two sides of insulative resin film 110 are removed, form and have the core base 110 of the substrate surface 110S that duplicates the surface state that has formed electrolysis Cu paper tinsel 115.(Figure 12 (b))

After cleaning, irradiating laser 120 selectively, form the through hole 110H that through hole forms usefulness on core base 110.(Figure 12 (c))

On a face of core base 110, set the baffle plate 120a of the black etc. of reflector laser 120 not superfluously, carry out the irradiation of laser 102, thus, on core base 110, form through hole 110H by laser from another face.At this moment, can make the cross section of through hole 110H form the aperture of through hole 110H of laser 120 irradiation sides big, with the less trapezoidal shape in aperture of the irradiation side opposition side of laser 120.

Thus, when the usefulness solder resist 160 that will after this carry out was filled the through hole 110H of core base 110, it is easy that the filling of solder resist 160 becomes.In addition, make through hole 110H area planarization, solder resist 160 is provided on the two sides of core base 110.

Then, carry out abatement processes that the process residues in the through hole 110H of core base 110 is removed, on the surface of the whole core base 110 on the surface that comprises through hole 110H, implement electroless plating then and apply, form electroless plating 130 as the energising layer.(Figure 12 (d))

Then, opening 145 is set on the two sides of core base 110,, forms resist 140 (Figure 12 (e)) to expose the regulation zone of the conducting portion 193a that is used for forming wiring 191,192 and through hole 180.Then, electroless plating 130 as the energising layer, is implemented electrolysis Cu plating, form the conducting portion 193a of wiring 191,192 and through hole 110H inner surface by electrolysis Cu coating 150 selectively.(Figure 12 (f))

Then, remove resist 140 (Figure 12 (g)), the unwanted electroless plating 130 that will expose by fast-etching is removed (Figure 13 (a)) then.

Then, the photosensitive solder resist of coating on the two sides of core base 110 forms solder mask layer 160 on the two sides of core base 110.(Figure 13 (b))

When wiring 191 sides bigger from the aperture of through hole 110H apply photosensitive solder resist to core base 110, solder resist can not pass through to less wiring 192 sides in aperture of through hole 110H at an easy rate, fill easily, and can on core base 110 two sides in the formation zone that comprises through hole 180, solder resist be set with flat condition.

Then, the photomask of use regulation etc. carries out mask exposure, development to solder resist 160, and portion of terminal 170,170a are exposed.(Figure 13 (c))

Then, on portion of terminal 170,170a surface, form Ni coating 171, Au coating 172 successively.(Figure 13 (d)).

Like this, formed this routine double-sided wiring board.

In addition, the comparative example of following double-sided wiring board as the double-sided wiring board shown in Fig. 1 (a) described, described double-sided wiring board and core substrate in the past shown in Figure 7 are same, on the two sides of core base, only set 1 layer of wiring, and through hole is set on base material by power auger, implement through hole plating, the wiring on two sides is electrically connected.In this case, the through hole that solder resist is filled into core base forms with in the through hole, covers with the wiring of solder resist with the two sides of core base.According to Figure 14, Figure 15 assembling double-sided wiring board as this comparative example is described simply.

At first, preparation by with electrolysis Cu paper tinsel 215a thermo-compressed, be layered in the processing that has 3 layers of structure on the two sides of core base 210 with base material (Figure 14 (a)).By the electrolysis Cu paper tinsel 215a on the two sides that is located at core base 210 is carried out etching, it is thinned to the thickness (Figure 14 (b)) of regulation.Then, (Figure 14 (c), through milled processed, the abatement processes that is used for removing burr, it is deposited to implement electroless plating, and electroless plating 230 (Figure 14 (d)) is set to offer the through hole 211H that through hole uses with power auger on base material 210a in processing.Then, electroless plating 230 as the energising layer, is implemented electrolysis Cu plating, electrolysis Cu coating 240 is set on the two sides of core base 210, in through hole 211H, form conducting portion 293a.(Figure 14 (e))

Then, on the two sides of core base 210, at regional 255 openings of regulation, form the resist 250 (Figure 14 (f)) that etch resistant is used respectively.Then, (Figure 15 (a)) removed in electrolysis Cu paper tinsel 215 etchings of the electro deposition 240 that will expose from the opening 255 of resist 250 of the etching solution by ferric sesquichloride solution etc., electroless plating 230, attenuate.Then, apply photosensitive solder resist 260, at this moment, fill with the through hole 211H of solder resist 260 simultaneously core base 210 from the two sides of core base 210.(Figure 15 (b))

Then, form regional 265 upper sheds (Figure 15 (c)) at the terminal of solder resist 260, on the electrolysis Cu coating 240 that exposes, set gradually Ni coating 271, Au coating 272, like this, just can access the double-sided wiring board of comparative example by photoetching process.(Figure 15 (d))

But the wiring of this manufacture method forms, and is to prepare in advance and the electrolysis Cu paper tinsel 215 of attenuate, electroless plating 230,240 etchings of electrolysis Cu coating and connecting up forms.So this manufacture method is the metal covering etch that forms wiring portion based on etching basically, form with the same wiring of method shown in Figure 7, miniaturization, densification that can not corresponding wiring.

Thereby, as the circuit on the double-sided wiring board/at interval, 50 μ m/50 μ m manufacturing below horizontal is very difficult.In addition, owing to form the through hole 211H that through hole forms usefulness by power auger on core base 210, its diameter becomes greatly.Therefore, same with the core substrate in the past shown in Fig. 7 (d), as through-hole diameter/drill lip diameter, can not do forr a short time than the level of 150 μ m/350 μ m.

In addition, owing to form the through hole that through hole forms usefulness by power auger, its diameter becomes greatly.Therefore, even solder resist is filled among this through hole 211H, also can on solder resist 260, produce depression 261.When using this double-sided wiring board, can produce bubble enter into depression 261 damage with the chip chamber that loads semiconductor device reliability problems or institute preferably the field be the problem that the semiconductor chip assembling procedure needs more load.

That is, in the double-sided wiring board of comparative example, have the problems referred to above with substrate as the assembling of high-density installation, can not be corresponding.

The present invention as mentioned above, can provide can corresponding high-density installation and than in the past combination multi-layer wire substrate better assembling circuit board aspect productivity.

Particularly, by the miniaturization of pad and the miniaturization of circuit, in the past, 1 layer of wiring layer that forms with the metal covering etch is set respectively on the two sides of core base, the additive process with coating formation wiring layer is provided with 1 layer of wiring layer on each wiring layer again.Have such structure, be used for CSP and stacked package.Can be with the double-sided wiring board in the past of 4 layers of Wiring structure, the double-sided wiring board of the present invention that is used in 2 layers of Wiring structure that set 1 layer of wiring layer on the core base two sides respectively substitutes.

Double-sided wiring board of the present invention is compared with 4 layers of Wiring structure in the past, and simple structure, its worker ordinal number have also reduced, and be good aspect productivity.

In addition, in double-sided wiring board of the present invention,, can alleviate the additional treatments in preferred field owing to eliminated the depression that becomes the solder resist of problem in the past.

Variation of the present invention

Then variation of the present invention is described according to Figure 16 to Figure 18.

Variation shown in Figure 16 only is provided in a side of the cross sectional shape difference of the through hole 110H on the core base 110, and other and above-mentioned the 1st execution mode and the 2nd execution mode are roughly the same.

Core base 110 has insulative resin and the glass fabric, aromatic polyamide nonwoven fabrics, the liquid crystal polymer nonwoven fabrics that are blended in this insulative resin, porous polyfluortetraethylefilm cloth etc.And, laser 120 obtains through hole 110H on the core base 110 by being radiated at.At this moment, by adjusting the energy of laser 120, make through hole 110H have as shown in Figure 16 cross sectional shape.

That is, in Figure 16, the cross sectional shape 305 of through hole 110H has: the 1st trapezoidal shape 305a, reduce towards inner, its aperture from the end 301 of through hole 110H; The 2nd trapezoidal shape 305b increases from the inside of through hole 110H towards the other end 302, its aperture.At this moment, the 1st trapezoidal shape 305a and the 2nd trapezoidal shape 305b are that the place, inside 307 with through hole 110H is that the boundary is divided into an end 301 sides and the other end 302 sides.

Like this, because the cross sectional shape 305 of through hole 110H is made of the 1st trapezoidal shape 305a of an end 301 sides and the 2nd trapezoidal shape 305b of the other end 302 sides, so when forming conductive part 193 (with reference to Fig. 2 (f)) filling the electrolysis plating from an end 301 sides, because the electrolysis plating draws on one side towards the place, inside 307 of the 1st trapezoidal shape 305a on one side and supplies with, so can be filled into reliably in the 1st trapezoidal shape 305a.The electrolysis plating is supplied with while expanding successfully to the 2nd trapezoidal shape 305b side in place 307 internally then, so the electrolysis plating can be filled in the 2nd trapezoidal shape 305b reliably.

Then combined multi-layer wire substrate 310 is described according to Figure 17.As shown in figure 17, multi-layer wire substrate 310 has above-mentioned double-sided wiring board 300 and is arranged on via insulating resin portion 160 and appends wiring layer 311,312 on the double-sided wiring board 300.

Wherein, double-sided wiring board 300 possesses: core base 110 has the substrate surface 110S that the two sides is roughened; Wiring layer 191,192 is located on each substrate surface 110S of core base 110.In addition, be formed with the through hole 110H that constitutes through hole 180 on core base 110, wiring layer 191,192 is each other by being filled in conducting portion 193 conductings in the through hole 110H.In addition, on the substrate surface 110S of core base 110 and among the through hole 110H, be provided with electroless plating 130.

In addition, the insulating resin portion 160 that wiring layer 191,192 is had opening 165 covers, and appends wiring layer 311,312 and is connected with wiring layer 191,192 via the opening 165 of insulating resin portion 160.And then, be provided with the insulating resin portion 313 of appending on the wiring layer 311,312 appending with opening 313a.Append in the wiring layer 311,312 part corresponding to opening 313a for appending portion of terminal 313a.

In multi-layer wire substrate shown in Figure 17 310, be provided with 4 layers of wiring layer 311,191,192,312.

Then, according to Figure 18, the multi-layer wire substrate 320 of protruding setting type is described.As shown in figure 18, multi-layer wire substrate 320 have above-mentioned double-sided wiring board 300 and be located at via insulating resin portion 160 this double-sided wiring board 300 upside append circuit board 321.

In addition, the insulating resin portion 160 that wiring layer 191,192 is had opening 165 covers, and is provided with the projection 328 that is communicated to conducting portion 193 in the opening 165 of insulating resin portion 160.

On the other hand, append circuit board 321 and have: append core base 322, its two sides has substrate surface 322S; Wiring layer 324,326 is located on each the substrate surface 322S that appends core base 322.And then, append through hole 323 appending to be provided with on the core base 322, be formed with conductting layer 323a appending on through hole 323 inner surfaces, and in appending through hole 323 inside, filling resist 325.

In addition, the append insulating resin portion 330 of the wiring layer 324 that appends circuit board 321 with opening 330a covers.

In addition, on protruding 328 conductive parts 193 that are configured in the through hole 110H that is filled in double-sided wiring board 300, be communicated with this conducting portion 193.In addition, append circuit board 321 append through hole 323 also be located at projection 328 position on.

And then the wiring layer 191 of double-sided wiring board 300 is connected with the wiring layer 326 that appends circuit board 321 via protruding 328 with conducting portion 193.In addition, at double-sided wiring board 300 and append between the circuit board 321, be provided with the insulating resin portion 331 of appending that covers wiring 326 and projection 328.

In multi-layer wire substrate shown in Figure 180 320, be provided with 4 layers of wiring layer 324,320,191,192.

Claims

1. double-sided wiring board is characterized in that having:

Core base, two sides have the substrate surface that is roughened;

Wiring layer is located on each substrate surface of core base;

Each wiring layer is each other via the through hole conducting that is located on the core base.

2. double-sided wiring board as claimed in claim 1 is characterized in that, is filled with conducting portion in through hole.

3. double-sided wiring board as claimed in claim 2 is characterized in that, on each wiring layer of being located on the two sides of core base, so that the state that portion of terminal is exposed is provided with solder resist.

4. double-sided wiring board as claimed in claim 2 is characterized in that, the outer surface that is located at each wiring layer on the two sides of core base has been carried out planarization with the outer surface of the conducting portion of through hole.

5. double-sided wiring board as claimed in claim 2 is characterized in that, the surface roughness of the substrate surface on the two sides of core base is that each 10 mean roughness RzJIS are in the scope of 2 μ m～10 μ m.

6. double-sided wiring board as claimed in claim 2 is characterized in that, double-sided wiring board is the semiconductor-sealing-purpose double-sided wiring board.

7. double-sided wiring board as claimed in claim 3 is characterized in that,

The portion of terminal of the one side side of core base is to be used for the connection lining that is connected with semiconductor chip,

The portion of terminal of another side side is to be used for the external connection terminals that is connected with external circuit.

8. double-sided wiring board as claimed in claim 3 is characterized in that, the portion of terminal that is located on the core base two sides has from the inboard laterally the Ni coating and the Au coating of configuration successively.

9. double-sided wiring board as claimed in claim 1 is characterized in that, is provided with conductive coating on the through hole inner surface, is filled with resist in through hole.

10. double-sided wiring board as claimed in claim 9 is characterized in that, on each wiring layer of being located on the core base two sides, so that the state that portion of terminal is exposed is provided with solder resist.

11. double-sided wiring board as claimed in claim 9 is characterized in that, the surface roughness of the substrate surface on the two sides of core base is that each 10 mean roughness RzJIS are in the scope of 2 μ m～10 μ m.

12. double-sided wiring board as claimed in claim 9 is characterized in that, double-sided wiring board is the semiconductor-sealing-purpose double-sided wiring board.

13. double-sided wiring board as claimed in claim 10 is characterized in that,

14. double-sided wiring board as claimed in claim 10 is characterized in that, the portion of terminal that is located on the core base two sides has from the inboard laterally the Ni coating and the Au coating of configuration successively.

15. double-sided wiring board as claimed in claim 1 is characterized in that, the cross section of the through hole of core base has roughly trapezoidal shape.

16. double-sided wiring board as claimed in claim 1 is characterized in that, the through hole of core base is to reduce to inner its aperture from an end, and the cross section has the 1st trapezoidal shape, and increases to its aperture of the other end internally, and the cross section has the 2nd trapezoidal shape.

17. double-sided wiring board as claimed in claim 16 is characterized in that, the 1st trapezoidal shape of through hole has the shape bigger than the 2nd trapezoidal shape.

18. the manufacture method of a double-sided wiring board, be used to make have the two sides have the core base of the substrate surface that is roughened and be located at wiring layer on each substrate surface of core base and each wiring layer each other via the double-sided wiring board that is located at the through hole conducting on the core base, it is characterized in that having:

The Cu paper tinsel that will have a matsurface is layered in core base with the operation on the two sides of insulating resin film with its matsurface towards the mode crimping of insulative resin film side;

Cu paper tinsel etching on the insulative resin film is removed, the matsurface of Cu paper tinsel is replicated on the two sides of insulative resin film, make the operation of core base;

On this core base, form the operation of through hole by laser;

Two sides and through hole inner surface enforcement electroless plating to core base apply, and form the operation of electroless plating;

On the two sides of core base, form the resist pattern, electroless plating as the energising layer, is implemented electrolysis Cu plating, form the operation of electrolysis Cu coating;

After resist removed, the operation that will remove to the unwanted electroless plating that exposes outside by fast-etching.

19. the manufacture method of double-sided wiring board as claimed in claim 18 is characterized in that, when forming electrolysis Cu coating, forms the conducting portion that is filled in the through hole by electrolysis Cu coating.

20. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, before forming electroless plating, the through hole inner surface is implemented abatement processes.

21. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, electrolysis Cu coating is carried out mechanical lapping or cmp, makes the planarization of electrolysis Cu coating.

22. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, also has:

After by fast-etching electroless plating being removed, the photosensitive solder resist of coating on the electrolysis Cu coating on the two sides of core base forms the operation of solder mask;

Solder mask is carried out mask exposure, development, the part of electrolysis Cu coating is exposed, form the operation of portion of terminal.

23. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, the matsurface that is crimped on the Cu paper tinsel on the insulative resin film has the surface roughness that 10 mean roughness RzJIS are 2 μ m～10 μ m.

24. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, the configuration baffle plate of superfluous reflector laser not on a face of core base carries out laser radiation from another face of core base, forms through hole on core base.

25. the manufacture method of double-sided wiring board as claimed in claim 22 is characterized in that, implements Ni plating and Cu plating on the portion of terminal surface successively.

26. the manufacture method of double-sided wiring board as claimed in claim 19 is characterized in that, when forming electrolysis Cu coating, the dry film resist is set on the two sides of core base, carries out mask exposure, development, forms the resist pattern.

27. the manufacture method of double-sided wiring board as claimed in claim 18 is characterized in that, also has:

After by fast-etching electroless plating being removed, the photosensitive solder resist of coating on the electrolysis Cu coating on the two sides of core base forms solder mask layer, and fills the operation of through hole by insulating resin portion;

Solder mask layer is carried out mask exposure, development, the part of electrolysis Cu coating is exposed, form the operation of portion of terminal.

28. the manufacture method of double-sided wiring board as claimed in claim 27 is characterized in that, the matsurface that is crimped on the Cu paper tinsel on the insulative resin film has the surface roughness that 10 mean roughness RzJIS are 2 μ m～10 μ m.

29. the manufacture method of double-sided wiring board as claimed in claim 27 is characterized in that, the configuration baffle plate of superfluous reflector laser not on a face of core base carries out laser radiation from another face of core base, forms through hole on core base.

30. the manufacture method of double-sided wiring board as claimed in claim 27 is characterized in that, implements Ni plating and Cu plating on the portion of terminal surface successively.

31. the manufacture method of double-sided wiring board as claimed in claim 27 is characterized in that, when forming electrolysis Cu coating, the dry film resist is set on the two sides of core base, carries out mask exposure, development, forms the resist pattern.

32. a multi-layer wire substrate is characterized in that having:

Double-sided wiring board has the wiring layer on the two sides core base with the substrate surface that is roughened and each substrate surface that is located at core base, and each wiring layer is each other via the through hole conducting that is located on the core base;

Append circuit board, be located at a side of this double-sided wiring board via insulating resin portion;

Append circuit board and have the two sides and have appending core base and being located at the wiring layer that appends on each substrate surface that appends core base of substrate surface, respectively append wiring layer and append the through hole conducting via being located to append on the core base each other.

33. multi-layer wire substrate as claimed in claim 32 is characterized in that, double-sided wiring board with append circuit board and be connected via projection.

34. multi-layer wire substrate as claimed in claim 33 is characterized in that, projection is located on the position corresponding to the through hole of double-sided wiring board.

35. multi-layer wire substrate as claimed in claim 34 is characterized in that, is filled with conducting portion in the through hole of double-sided wiring board.

36. a multi-layer wire substrate is characterized in that having:

Append circuit board, be located at the both sides of this double-sided wiring board via insulating resin portion.

37. multi-layer wire substrate as claimed in claim 36 is characterized in that, is respectively appending on the wiring layer, is provided with the insulating resin portion of appending so that append the state that portion of terminal exposes.