CN1786676A - Photosensitive sensor and its lighting detecting circuit - Google Patents
Photosensitive sensor and its lighting detecting circuit Download PDFInfo
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- CN1786676A CN1786676A CN 200410089221 CN200410089221A CN1786676A CN 1786676 A CN1786676 A CN 1786676A CN 200410089221 CN200410089221 CN 200410089221 CN 200410089221 A CN200410089221 A CN 200410089221A CN 1786676 A CN1786676 A CN 1786676A
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- light sensor
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Abstract
The invention discloses photo-sensor and illumination testing circuit. The photo-sensor is made up of P+NW diode and intrinsic transistor under CMOS logic technique. The illumination testing circuit is made up of the photo-sensor, current source, and comparator. It is used 2AL screening sensor as the reference signal, and enlarged the signal difference. The invention can effectively improve testing sensitivity and realize illumination testing without adding cost. And its structure is simple. It can be applied in IC cards production.
Description
Technical field
The present invention relates to a kind of light sensor that is applicable to the IC-card series products.The invention still further relates to the lighting detecting circuit that utilizes this light sensor to constitute.
Background technology
The IC-card series products needs anti-detection design such as photosensitive detection.Common CMOS process using silicide structural, because the silicide light transmission is very poor, the photon number that arrives PN junction is seriously cut down, and has lost most optical radiation energies, has reduced detection efficiency.Thus, the photovoltage of PN junction is less than common solar cell.According to the test data of the NEC CZ6H of Huahong (0.35um) technology, the P+NW of 20*20um2 under the 100lx (the P diffusion layer is to the N trap) diode photovoltage is about 250mV.So faint signal demand just can be utilized by amplifying.Because the NW (N trap) of P+NW needs ground connection (GND) as far as possible, to eliminate ghost effect, the design of amplifying circuit is difficulty very.To increase production cost if append the step of removing silicide area.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of light sensor, and it can effectively improve the sensitivity of detection, and simple in structure.The present invention also will provide a kind of lighting detecting circuit that utilizes above-mentioned light sensor to constitute, and is not increasing realization illumination detection under the technology condition of cost.
For solving the problems of the technologies described above, a kind of light sensor of the present invention under the CMOS logic process, is made of P+NW diode D1 and Native (intrinsic) transistor MN1, the anode of diode D1 is connected with transistor MN1 base stage, and the negative electrode of diode D1 is connected with transistor MN1 emitter.
Adopt light sensor of the present invention, utilized the characteristics of the low threshold value of Native (intrinsic) transistor, PN junction and this expropriation and management are combined into light sensor, effectively raise the sensitivity of detection.
The lighting detecting circuit that utilizes above-mentioned light sensor to constitute of the present invention comprises a comparer, is connected in series current source I1 and light sensor GM1, current source I2 and light sensor GM2 between power supply and ground wire; Current source I1 is connected with the positive input of comparer with the contact of light sensor GM1, and current source I2 is connected with the reverse input end of comparer with the contact of light sensor GM2; Light sensor GM2 is as the reference sensor, light sensor GM1 is as detecting sensor, cover 2AL (2 layers on metal) on the diode among the light sensor GM2, cover the incident light of the overwhelming majority, current source I1 is slightly less than current source I2, when the external world did not have rayed, the positive input voltage of comparer was output as low level less than reverse input end voltage; When ambient light was shone increase, I1 constantly increased, and promptly positive input voltage constantly rises, when reaching certain light intensity, and I1＞I2, making the comparer output switching activity is high level.
Adopt lighting detecting circuit of the present invention, do not increasing under the technology condition of cost, can realize that in common CMOS technology illumination detects.
Description of drawings
Fig. 1 is the schematic diagram of light sensor of the present invention;
Fig. 2 is the schematic diagram of lighting detecting circuit of the present invention.
Embodiment
As shown in Figure 1, a kind of light sensor of the present invention under the CMOS logic process, is made of P+NW diode D1 and intrinsic transistor MN1, and the anode of diode D1 is connected with transistor MN1 base stage, and the negative electrode of diode D1 is connected with transistor MN1 emitter.The negative electrode of diode D1 and transistor MN1 emitter junction K need ground connection (GND).
Consult Fig. 2 again, the lighting detecting circuit that utilizes above-mentioned light sensor to constitute of the present invention comprises a comparer, is connected in series current source I1 and light sensor GM1, current source I2 and light sensor GM2 between power supply and ground wire.Current source I1 is connected with the positive input of comparer with the contact of light sensor GM1, and current source I2 is connected with the reverse input end of comparer with the contact of light sensor GM2.Light sensor GM2 is as the reference sensor, and light sensor GM1 is as detecting sensor.Cover 2AL (2 layers on metal) on the diode among the light sensor GM2, cover the incident light of the overwhelming majority.Current source I1 is slightly less than current source I2, when the external world does not have rayed, is slightly less than I2 owing to set I1, and the positive input voltage of comparer is output as low level less than reverse input end voltage; When ambient light was shone increase, I1 constantly increased, and promptly positive input voltage constantly rises, when reaching certain light intensity, and I1＞I2, making the comparer output switching activity is high level.
In order to eliminate interference, adopted differential configuration in the lighting detecting circuit design of the present invention.If extraneous the existence disturbed, and is common-mode signal for light sensor GM1, GM2 then, can be suppressed to a certain extent.
The present invention has reached designing requirement through the flow test, can be applied in the card series products.
Claims (2)
1. light sensor, it is characterized in that: under the CMOS logic process, be made of P+NW diode D1 and intrinsic transistor MN1, the anode of diode D1 is connected with transistor MN1 base stage, and the negative electrode of diode D1 is connected with transistor MN1 emitter.
2. one kind is utilized the described light sensor of claim 1 to carry out the circuit that illumination detects, and it is characterized in that: comprise a comparer, be connected in series current source I1 and light sensor GM1, current source I2 and light sensor GM2 between power supply and ground wire; Current source I1 is connected with the positive input of comparer with the contact of light sensor GM1, and current source I2 is connected with the reverse input end of comparer with the contact of light sensor GM2; Light sensor GM2 is as the reference sensor, light sensor GM1 is as detecting sensor, cover 2AL on the diode among the light sensor GM2, cover the incident light of the overwhelming majority, current source I1 is slightly less than current source I2, when the external world does not have rayed, is slightly less than I2 owing to set I1, the positive input voltage of comparer is output as low level less than reverse input end voltage; When ambient light was shone increase, I1 constantly increased, and promptly positive input voltage constantly rises, when reaching certain light intensity, and I1＞I2, making the comparer output switching activity is high level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089221 CN1786676A (en) | 2004-12-08 | 2004-12-08 | Photosensitive sensor and its lighting detecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410089221 CN1786676A (en) | 2004-12-08 | 2004-12-08 | Photosensitive sensor and its lighting detecting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1786676A true CN1786676A (en) | 2006-06-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410089221 Pending CN1786676A (en) | 2004-12-08 | 2004-12-08 | Photosensitive sensor and its lighting detecting circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1786676A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105095800A (en) * | 2014-05-08 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Optical detector |
| CN106407844A (en) * | 2016-11-15 | 2017-02-15 | 上海华虹集成电路有限责任公司 | Photo-detection circuit |
-
2004
- 2004-12-08 CN CN 200410089221 patent/CN1786676A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105095800A (en) * | 2014-05-08 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Optical detector |
| CN105095800B (en) * | 2014-05-08 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | Photodetector |
| CN106407844A (en) * | 2016-11-15 | 2017-02-15 | 上海华虹集成电路有限责任公司 | Photo-detection circuit |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Open date: 20060614 |