CN1764738B - 用于在平坦表面上沉积大面积涂层的设备和方法 - Google Patents

用于在平坦表面上沉积大面积涂层的设备和方法 Download PDF

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Publication number
CN1764738B
CN1764738B CN03826341.6A CN03826341A CN1764738B CN 1764738 B CN1764738 B CN 1764738B CN 03826341 A CN03826341 A CN 03826341A CN 1764738 B CN1764738 B CN 1764738B
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CN
China
Prior art keywords
plasma
mouth
plasma body
reactant gases
flow rate
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Expired - Fee Related
Application number
CN03826341.6A
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English (en)
Chinese (zh)
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CN1764738A (zh
Inventor
马克·谢普肯斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SABIC Global Technologies BV
Original Assignee
SABIC Innovative Plastics IP BV
General Electric Co
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Publication of CN1764738A publication Critical patent/CN1764738A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN03826341.6A 2003-02-20 2003-02-20 用于在平坦表面上沉积大面积涂层的设备和方法 Expired - Fee Related CN1764738B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/005209 WO2004076716A1 (en) 2003-02-20 2003-02-20 Apparatus and method for depositing large area coatings on planar surfaces

Publications (2)

Publication Number Publication Date
CN1764738A CN1764738A (zh) 2006-04-26
CN1764738B true CN1764738B (zh) 2015-04-08

Family

ID=32925324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03826341.6A Expired - Fee Related CN1764738B (zh) 2003-02-20 2003-02-20 用于在平坦表面上沉积大面积涂层的设备和方法

Country Status (6)

Country Link
EP (1) EP1597409A1 (enExample)
JP (1) JP2006514161A (enExample)
KR (1) KR100977955B1 (enExample)
CN (1) CN1764738B (enExample)
AU (1) AU2003211169A1 (enExample)
WO (1) WO2004076716A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743524B2 (en) * 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
US7521653B2 (en) * 2004-08-03 2009-04-21 Exatec Llc Plasma arc coating system
JP5357050B2 (ja) 2006-12-28 2013-12-04 エグザテック・リミテッド・ライアビリティー・カンパニー プラズマアークコーティング用装置および方法
KR20100017761A (ko) 2007-05-17 2010-02-16 엑사테크 엘.엘.씨. 공통 플라즈마 코팅 구역에서 복수의 코팅 재료를 침착시키기 위한 장치 및 방법
CN102618846B (zh) * 2012-04-18 2014-04-09 南京航空航天大学 一种多炬等离子体喷射cvd法沉积超硬膜的方法及装置
EP2784175A1 (fr) * 2013-03-28 2014-10-01 NeoCoat SA Equipement de dépôt de diamant en phase vapeur
CN103924210A (zh) * 2014-04-24 2014-07-16 无锡元坤新材料科技有限公司 一种等离子体沉积装置及金刚石涂层的制备方法
WO2016077345A1 (en) * 2014-11-10 2016-05-19 Superior Industries International, Inc. Method of coating alloy wheels
US12454759B2 (en) 2014-11-10 2025-10-28 Superior Industries International, Inc. Method of coating alloy wheels using inter-coat plasma
CN107881485B (zh) * 2017-11-01 2019-10-01 深圳市华星光电半导体显示技术有限公司 等离子体增强化学气相沉积设备及oled面板的封装方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365016B1 (en) * 1999-03-17 2002-04-02 General Electric Company Method and apparatus for arc plasma deposition with evaporation of reagents
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772341B2 (ja) * 1991-02-21 1995-08-02 中外炉工業株式会社 圧力勾配型プラズマガンによるプラズマ発生装置
US6948448B2 (en) * 2001-11-27 2005-09-27 General Electric Company Apparatus and method for depositing large area coatings on planar surfaces
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
JP2003268556A (ja) * 2002-03-08 2003-09-25 Sumitomo Heavy Ind Ltd プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6365016B1 (en) * 1999-03-17 2002-04-02 General Electric Company Method and apparatus for arc plasma deposition with evaporation of reagents
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SMIT C ET AL..Fast deposition of microcrystalline silicon with an expandingthermal plasma.JOURNAL OF NON-CRYSTALLINE SOLIDS299-302.2002,299-30299. *

Also Published As

Publication number Publication date
WO2004076716A1 (en) 2004-09-10
EP1597409A1 (en) 2005-11-23
JP2006514161A (ja) 2006-04-27
AU2003211169A1 (en) 2004-09-17
KR100977955B1 (ko) 2010-08-24
KR20050113186A (ko) 2005-12-01
CN1764738A (zh) 2006-04-26

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SHABO BASE CREATION PLASTICS INTELLECTUAL PROPERT

Free format text: FORMER OWNER: GENERAL ELECTRIC CO.

Effective date: 20081107

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20081107

Address after: Bergen Op Zoom Holland

Applicant after: Sabic Innovative Plastics Ip

Address before: American New York

Applicant before: General Electric Company

C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: SABIC INNOVATIVE PLASTICS IP

Free format text: FORMER NAME: SABIC INNOVATIVE PLASTICS IP

CP03 Change of name, title or address

Address after: Holland city Aupu zoom Bergen

Patentee after: Sabic Innovative Plastics IP

Address before: Bergen Op Zoom Holland

Patentee before: Sabic Innovative Plastics Ip

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150408

Termination date: 20190220