CN1758144A - Photorresist stripping liquid composite - Google Patents

Photorresist stripping liquid composite Download PDF

Info

Publication number
CN1758144A
CN1758144A CNA2005101028490A CN200510102849A CN1758144A CN 1758144 A CN1758144 A CN 1758144A CN A2005101028490 A CNA2005101028490 A CN A2005101028490A CN 200510102849 A CN200510102849 A CN 200510102849A CN 1758144 A CN1758144 A CN 1758144A
Authority
CN
China
Prior art keywords
weight
account
composition
photoresist remover
promoter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2005101028490A
Other languages
Chinese (zh)
Other versions
CN100578368C (en
Inventor
尹锡壹
金圣培
金玮溶
郑宗铉
许舜范
金柄郁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of CN1758144A publication Critical patent/CN1758144A/en
Application granted granted Critical
Publication of CN100578368C publication Critical patent/CN100578368C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)

Abstract

A photoresist stripping liquid composition contains a cyclic amine, a solvent and a stripping promoter. Or, the photoresist stripping liquid composition contains a cyclic amine, a solvent, a corrosion preventive and a stripping promoter. When the photoresist stripping liquid composition is used not only for general processes of applying isopropyl alcohol (IPA) rinsing in the present system of manufacturing an LCD module but for recent processes of omitting the IPA rinsing step, the composition has no additional corrosive influences on metal wiring and, in particular, it can significantly improve stripping force.

Description

The photoresist remover composition
Technical field
The present invention relates to a kind of remover composition that the stripping metal wiring forms employed photoresist that is used for, particularly a kind of above stripper of three components that prevents to produce corrosion etc. to the above stripper of two components of comprising annular amine (cyclic amine), solvent etc. or to including antiseptic again in the above-mentioned component because of Jafani effect (galvanic effect), add and peel off promoter, thereby can improve the photoresist remover composition (Compositionfor removing a photoresist) of stripping performance.
Background technology
In the manufacturing of integrated circuit (IC), large scale integrated circuit (LSI), VLSI (very large scale integrated circuit) semiconductor devices such as (VLSI) and liquid crystal indicator (LCD) etc., be the formation of metal line, adopt photolithography (Photo-lithography) engineering.
For removing this photoresist that is used for photoetching process, adopted the solution that biological and alkyl benzene sulphonate (alkylbenzenesulfonic acid) and chloride series organic solvent are constituted by phenol derivmives blend at the industry initial stage.But this remover contains phenol series compound and chlorine series organic solvent, therefore has toxicity, can corrode the metal level it under, and its waste liquid is difficult to handle, and because water-insoluble and make unavoidably and peel off the back and clean the engineering complexity that becomes.
And, along with the granular tendency of institute processing metal wiring, increased the difficulty of metal and oxide film etching condition, strengthened the damage of photoresist and make photoresist rotten.Owing to there is as above reason, adopt organic solvent to handle the back photoresist and still remain on the substrate, therefore need a kind of composition with strong stripping ability, avoid existing of residue with this.
Be the deficiency that overcomes the above problems, adopted the water-soluble remover that constitutes by organic amine and solvent.
By the stripper that organic amine and solvent constitute, be that the stripper that nowadays adopts in most of engineering makes up substantially.But metal line at every moment changes fast, therefore also needs corresponding variation at its stripper.
And, adopt streptamine and annular amine in the manufacturing engineering of available liquid crystal display device.Streptamine is owing to have strong basicity, therefore be impregnated into strongly at dry-etching or Wet-type etching, ashing (ashing) or ion and inject that engineering various engineering specifications such as (Implanting) go bad down or by the photoresist matrix polymer of commissure (matrix polymer), cut off or the interior or intermolecular combination of reduction molecule, so that utilize the removal of stripper to become easily, therefore just bring into use till now from the industry initial stage.
But, the granular of metal line has promoted the sex change of photoresist because of the etching engineering, required stronger stripping ability thus, and the variation of the variation of the metal line kind of using and past bilayer of metal line or three-decker, required the corrosion of wiring is tending towards minimizing.
Therefore, for making existing streptamine be tending towards minimizing to the corrosion of metal line, adopted annular amine, and adopted materials such as antiseptic at Jafani effect (galvanic effect) wiring of non-individual layer, that taken place in two layers or the three-layer metal wiring in order to prevent.
But aforesaid prior art though reached its intended purposes aspect anticorrosion, is failing to obtain tangible improvement aspect the raising stripping ability.
Summary of the invention
Be to solve the as above weak point of prior art, the object of the present invention is to provide that a kind of to strengthen annular amine active and improve the photoresist remover composition of stripping ability.
For solving the as above weak point of prior art, the present invention also provides the annular amine activity of a kind of enhancing and improves stripping ability, makes the influence to metal line be tending towards minimized photoresist remover composition simultaneously.
The present invention realizes as follows.
The invention provides a kind of photoresist remover composition that comprises annular amine, solvent and peel off promoter.
The present invention also provides a kind of photoresist remover composition that comprises annular amine, solvent, antiseptic and peel off promoter.
Among the present invention, account for composition 100 weight portions that 1-50 weight %, proton polar solvent account for 50-99 weight %, the promoter of peeling off of preferably adding the 0.01-10 weight portion with respect to annular amine.
Among the present invention, account for composition 100 weight portions that 1-50 weight %, proton polar solvent account for 50-99 weight %, preferably add the promoter of peeling off of the antiseptic of 0.1-10 weight portion and 0.01-10 weight portion with respect to annular amine.
Among the present invention, account for composition 100 weight portions that 1-50 weight %, aprotic polar solvent account for 50-99 weight %, the promoter of peeling off of preferably adding the 0.01-10 weight portion with respect to annular amine.
Among the present invention, account for composition 100 weight portions that 1-50 weight %, aprotic polar solvent account for 50-99 weight %, preferably add the promoter of peeling off of the antiseptic of 0.1-10 weight portion and 0.01-10 weight portion with respect to annular amine.
Among the present invention, account for 1-50 weight %, proton polar solvent with respect to annular amine and account for composition 100 weight portions that 10-80 weight %, aprotic polar solvent account for 15-75 weight %, the promoter of peeling off of preferably adding the 0.01-10 weight portion.
Among the present invention, account for 1-50 weight %, proton polar solvent with respect to annular amine and account for composition 100 weight portions that 10-80 weight %, aprotic polar solvent account for 15-75 weight %, preferably add the promoter of peeling off of the antiseptic of 0.1-10 weight portion and 0.01-10 weight portion.
Photoresist stripper of the present invention has outstanding removal ability, and do not cause in the engineering do not wish can remove photoresist fully under the situation of the metal line corrosion phenomenon seen, and have outstanding clean result.Volatilization during this external cause heating is low to the influence that its component changes, and therefore can guarantee the stability of engineering.
Embodiment
Below the present invention is described in more detail.
The invention provides a kind of photoresist remover composition, it adds to be used to improve the photoresist stripping ability is peeled off promoter on a small quantity in by the above stripper of two components that annular amine, solvent constituted.
The present invention also provides a kind of photoresist remover composition, it is by annular amine, solvent and with so that the corrosion of pattern metal wiring is tending towards in the above stripper of three components that minimized antiseptic constitutes, adds to be used to improve the photoresist stripping ability peeled off promoter on a small quantity.In the present invention, promoter is peeled off in interpolation on a small quantity to remover composition, uses and improves the removal function that annular amine has, and keeps the Anticorrosive Character to metal line that annular amine has simultaneously.
Annular amine of the present invention has improved the etching problem to metal line that streptamine had, and because of it has higher boiling, can improve the stability of engineering.
Described annular amine is from 1-(2-hydroxyethyl) piperazine (1-(2-hydroxyethyl) piperazine), 1-(2-aminoethyl) piperazine (1-(2-aminoethyl) piperazine), 1-(2-hydroxyethyl) methyl piperazine (1-(2-hydroxyethyl) methylpiperazine), N-(3-aminopropyl) morpholine (N-(3-aminopropyl) morpholine), 2-methyl piperazine (2-methylpiperazine), 1-methyl piperazine (1-methylpiperazine), 1-amino-4-methyl piperazine (1-amino-4-methylpiperazine), a kind of compound selected in 1-benzyl piperazine (1-benzyl piperazine) and the 1-phenylpiperazine (1-phenyl piperazine) or the potpourri of compound more than two kinds.
Annular amine among the present invention, when selecting one or more in above-claimed cpd, its content preferably accounts for the 1-50 weight % of amine and solvent total amount.At this moment, if the content of amine less than 1 weight %, can make the removal performance to photoresist reduce,, can strengthen corrosion if the content of amine is higher than 50 weight %.
The solvent that uses among the present invention is proton polar solvent, aprotic polar solvent or its potpourri preferably.
Proton polar solvent among the present invention as carrying out photoresist under in hot conditions when removing engineering, is not easy to occur the volatilization phenomenon because of it has higher boiling, uses the component at initial stage that the continual and steady function of peeling off recently is provided thereby can keep stripper.And, it is reduced the surface tension of photoresist lower film is helped overburden operation.Low congealing point (freezingpoint) and high combustion point (buming point) also are comparatively favourable aspect storage stability.
Described proton polar solvent can use as diethylene glycol monoalkyl ethers (diethyleneglycolmonoalkylether series) etc. can mix with amine, the almost infinitely-great compound of solubleness in water, comprise diethylene glycol dimethyl ether (diethyleneglycolmethylether), diethylene glycol ether (diethyleneglycolethylether), diethylene glycol butyl ether (ditehyleneglycolbutylether) etc., these compounds can be to select separately or select to mix more than two kinds to use.
When the present invention adopted two component, the content of described proton polar solvent preferably accounted for the 50-99 weight % of amine and solvent total amount.At this moment, if its content less than 50 weight %, the content of amine relatively increases and has strengthened corrosion, can cause photoresist to remove the reduction of ability as surpassing 99 weight %.And when if the present invention adopts three components above, proton polar solvent content preferably accounts for the 10-80 weight % of amine and solvent total amount.At this moment, if its content is less than 10 weight %, the content of aprotic polar solvent and amines (weight %) increases relatively, corrosion to metal line is strengthened, and do not have sufficient ability solubilized by the macromolecule of amines and aprotic polar solvent gel (gel), remove ability thereby reduce photoresist.If the content of proton polar solvent above 80 weight %, can make the content (weight %) of aprotic polar solvent reduce relatively and cause photoresist to remove the reduction of ability.
Among the present invention, described aprotic polar solvent will be dissolved into the unit formula level by the aggregation colloid that amines is peeled off.Particularly can prevent from mainly to betide the unfavorable phenomenon that the photoresist in the washing engineering adheres to again.Described aprotic polar solvent has dimethyl sulfoxide (DMSO) (dimethylsulfoxide), N-N-methyl-2-2-pyrrolidone N-(N-mehtyl-2-pyrrolidone), N, N-dimethyl acetamide (N, N-dimethylacetamide), N, dinethylformamide (N, N-dimethylformamide), N, N-methylimidazole (N, N-dimethylimidazole), gamma-butyrolactone (gamma-butyrolactone), sulfolane (sulfolane) etc., these solvents can use separately or select wherein to mix more than two kinds to use.
When the present invention adopted two component, the content of described aprotic polar solvent preferably accounted for the 50-99 weight % of amine and solvent total amount.At this moment, if its content less than 50 weight %, the content of amine relatively increases and has strengthened corrosion, as surpassing 99 weight %, can cause photoresist to remove the reduction of ability.When the present invention adopts three components above, aprotic polar solvent content can be the 10-80 weight % that accounts for amine and solvent total amount, preferably account for 15-70 weight %, at this moment, if its content is less than 10 weight %, the shortcoming that can exist photoresist removal ability to reduce is deepened the corrosion of metal line as making above 80 weight %, and is reduced the reduction that causes photoresist to remove ability and washability relatively because of the content (weight %) as the proton polar solvent glycol ether.
Described antiseptic can adopt comprise the tool lone pair-N-,-S-,-compound of O-element, will have antiseptic effect preferably like this, particularly have-OH ,-during SH functional group, wherein hydrogen atom can and metal combine, so at physics, chemically have an outstanding antiseptic property.
Among the present invention, described antiseptic is from having C 1-C 12Alkyl gallates class (alkyl gallate) compound, sulfydryl benzene imidazoles (mercaptobenz imidazole), methimazole sulfydryl (mercapto) compounds such as (mercapto methyl imidazole); Reach more than one compounds of selecting in TTA (tolyltriazole), benzotriazole (benzotriazole), the carboxylic acid benzotriazole triazole type (triazole) such as (carboxylic benzotriazole).
Among the present invention, with respect to amine and solvent total amount 100 weight portions, the content of described antiseptic can be the 0.1-10 weight portion.At this moment, if its content less than 0.1 weight portion, corrosion phenomenon can take place in metal line, as surpassing 10 weight portions, can cause the reduction of stripping ability, and the film surface is changed.
Describedly peel off promoter when can improve the remover composition activity, can also keep antiseptic property metal line.
Describedly peel off promoter and can adopt more than one compounds of selecting by in the represented compound of following Chemical formula 1, Chemical formula 2 and chemical formula 3.
[Chemical formula 1]
[Chemical formula 2]
Figure A20051010284900122
[chemical formula 3]
Figure A20051010284900123
In described Chemical formula 1 and the Chemical formula 2, R represents that carbon number is the alkyl of 1-4, and R ' expression carbon number is alkyl or the hydroxyl alkyl (alkylol) of 1-20.
Photoresist remover composition of the present invention comprises peels off promoter, be used for the lithoprinting engineering, its ability of removing photoresist is outstanding especially, is comprising under the situation of antiseptic, not only have outstanding stripping ability, also can make corrosion be tending towards minimizing the pattern metal wiring.With respect to amine and solvent total amount 100 weight portions, the described content of peeling off promoter can be the 0.01-10 weight portion, and 0.1-5 weight portion preferably.
Below in conjunction with embodiment and comparative example the present invention is described in more detail, still, embodiments of the invention only are used to explain the present invention, and protection scope of the present invention is not limited to this.
[embodiment]
For evaluation has the performance of the photoresist remover composition of the present invention that is described in table 1 below component, carry out its corrosivity, fissility test with following method.
A) fissility test
The situation of change of its stripping ability carry out this test when peeling off promoter for confirming to add in the photoresist remover composition.
In order to test the effect of peeling off of photoresist remover composition, positive Photoresisting agent composition (DTFR-3650B commonly used, the trade name of Korea S Dongjin semichem) under the 2500rpm condition, is spun on glass substrate (bare-glass) afterwards, goes up with 100 ℃ of heat treated 90 seconds at electric hot plate (Hot plate).Measure coated film thickness (thickness is 1.5 μ m) then, carry out afterwards under 170 ℃ of conditions, glass substrate being carried out thermal treatment in 20 minutes after light leak, the video picture, use producing the photoresist film.Described glass substrate is immersed in respectively in the stripper described in embodiment and the comparative example, and with the stripper temperature maintenance at 70 ℃, then its stripping performance is estimated according to following standard.Described dipping respectively just make when finishing and under 70 ℃ of conditions volatilization carry out after 24 hours.
◎ ... flood in back 2 minutes and remove
Zero ... flood in back 3 minutes and remove
△ ... flood in back 4 minutes and remove
* ... can not in back 6 minutes of dipping, remove
Eurymeric used herein (positive type) Photoresisting agent composition is that film forms composition, by the alkali soluble resin, constituted as two nitrine quinone (quinonediazide) series compounds and their organic solvent of solubilized of photosensitive material.
The alkali soluble resin is to make formaldehyde (formaldehyde) and cresols isomer mixture (cresol isomer mixture) carry out condensation reaction under the acid catalysis condition, obtains with this novolak resin (novolac resin).The ratio of cresols isomeride is in the cresols isomer mixture, and metacresol (m-cresol) accounts for 60 weight %, paracresol (p-cresol) accounts for 40 weight %.
Described two nitrine quinones (quinone diazide) based compound as photosensitive material, be under triethylamine (triethylamine) catalyzer condition, to make 2,3,4,4-tetrahydroxybenzophenone (2,3,4,4-tetrahidroxybenzophenone) with 1,2-diazido naphthoquinone-5-sulfonic acid chloride (1,2-naphthoquinone diazide-5-sulfonyl chloride) carries out esterification and comes Synthetic 2,3,4,4-tetrahydroxybenzophenone-1,2-diazido naphthoquinone-5-sulphonic acid ester (2,3,4,4-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic esther) mode prepare.
Phenolics (novolac resin) 20g and the Photoactive compounds 5g synthetic described warp are dissolved among ethylene glycol monoethyl ether acetate (ethyleneglycolmono ethyletheracetate) 75g, then the filtrator by 0.2 μ m filters, and obtains eurymeric (positive type) photonasty Photoresisting agent composition.
[table 1]
The component of stripper (weight %) Estimate
Amine Polar solvent Glycol ether Antiseptic Peel off promoter Stripping performance
Kind Amount Kind Amount Kind Amount Kind Amount Kind Amount ◎
Embodiment 1 HEP 5 NMP 35 DEGBE 60 MG 1 ADD-1 0.5 ◎
2 AEP 5 NMP 35 DEGBE 60 MG 1 ADD-1 0.5 ◎
3 BP 10 DMSO 30 DEGBE 60 MG 1 ADD-1 1 ◎
4 PP 10 DMAc 30 DEGBE 60 MG 0.5 ADD-2 3 ◎
5 HEP 20 DMSO 30 DEGBE 50 MG 0.5 ADD-2 0.1 ◎
6 AEP 20 DMAc 30 DEGBE 50 MG 0.5 ADD-2 0.1 ◎
7 BP 20 NMP 30 DEGBE 50 MMB 0.5 ADD-3 1 ◎
8 PP 20 NMP 30 DEGBE 50 MMB 0.5 ADD-3 3 ◎
9 HEP 10 DMSO 30 DEGBE 60 ADD-1 0.5 ◎
10 AEP 10 DMAc 30 DEGBE 60 ADD-1 0.5 ◎
11 BP 10 NMP 30 DEGBE 60 ADD-1 3 ◎
12 PP 10 NMP 30 DEGBE 60 ADD-2 5 ◎
13 HEP 10 NMP 30 DEGEE 60 ADD-2 0.1 ◎
14 AEP 10 NMP 30 DEGEE 60 ADD-2 0.1 ◎
15 BP 10 NMP 30 DEGEE 60 ADD-3 5 ◎
16 PP 10 NMP 30 DEGEE 60 ADD-3 5 ◎
17 HEP 20 NMP 80 MG 1 ADD-1 0.5 ◎
18 AEP 20 NMP 80 MG 1 ADD-2 0.5 ◎
19 HEP 20 NMP 80 ADD-2 0.1 ◎
20 AEP 20 NMP 80 ADD-2 0.1 ◎
21 HEP 30 DEGBE 70 MG 0.5 ADD-1 0.5 ◎
22 AEP 30 DEGBE 70 MG 0.5 ADD-3 0.5 ◎
23 HEP 40 DEGBE 60 ADD-2 0.1 ◎
24 AEP 40 DEGBE 60 ADD-3 0.1 ◎
Comparative example 1 HEP 10 NMP 30 DEGBE 60 MG 1 ×
2 AEP 10 NMP 30 DEGBE 60 MG 1 △
3 BP 10 DMSO 30 DEGBE 60 MG 1 ×
4 PP 10 DMAc 30 DEGBE 60 MG 0.5 ×
5 HEP 20 DMSO 30 DEGBE 50 MG 0.5 ○
6 AEP 20 DMAc 30 DEGBE 50 MG 0.5 △
7 BP 40 NMP 10 DEGBE 50 MG 0.5 ×
8 PP 40 NMP 30 DEGBE 30 MG 0.5 ×
9 MEA 10 NMP 30 DEGBE 60 △
10 MIPA 10 NMP 30 DEGBE 60 ×
11 NMEA 10 NMP 30 DEGBE 60 △
12 AEE 10 NMP 30 DEGBE 60 ×
Note: antiseptic property is evaluated as and adds the comparison of front and back peeling off promoter, does not therefore carry out mark in the evaluation of comparative example.
Abbreviation in the last table is as follows:
MEA: monoethanolamine (Monoethanolamine);
NMEA:N-methylethanolamine (N-methylethanolamine);
MIPA:1-amino-2-propyl alcohol (1-Amino-2-propanol);
AEE:2-(2-amino ethoxy) ethanol (2-(2-Aminoethoxy) ethanol);
HEP:1-(2-hydroxyethyl) piperazine (1-(2-Hydroxyethyl) piperazine);
AEP:1-(2-aminoethyl) piperazine (1-(2-Aminoethyl) piperazine);
PP: phenylpiperazine (Phenyl piperazine);
BP: benzyl piperazine (Benzyl piperazine);
DEGBE: diethylene glycol butyl ether (Diethyleneglycolbutylether);
DEGEE: diethylene glycol ether (Diethyleneglycolethylether);
NMP:N-methyl pyrrolidone (N-methyl-pyrrolidone);
DMSO: dimethyl sulfoxide (DMSO) (Dimethylsulfoxide);
DMAc: dimethyl acetamide (Dimethylacetamide);
MG: gallicin (Methyl gallate);
MMB: first mercaptobenzimidazole (Mercapto methyl benzimidazole);
ADD-1: the chemicals of representing with described Chemical formula 1 (chemical);
ADD-2: the chemicals of representing with described Chemical formula 2 (chemical);
ADD-3: with the chemicals (chemical) of described chemical formula 3 expressions.

Claims (17)

1, a kind of photoresist remover composition is characterized in that: comprise annular amine, solvent and peel off promoter.
2, a kind of photoresist remover composition is characterized in that: comprise annular amine, solvent, antiseptic and peel off promoter.
3, photoresist remover composition as claimed in claim 1 or 2 is characterized in that: described annular amine is more than one compounds of selecting from 1-(2-hydroxyethyl) piperazine, 1-(2-aminoethyl) piperazine, 1-(2-hydroxyethyl) methyl piperazine, N-(3-aminopropyl) morpholine, 2-methyl piperazine, 1-methyl piperazine, 1-amino-4-methyl piperazine, 1-benzyl piperazine and 1-phenylpiperazine.
4, photoresist remover composition as claimed in claim 1 or 2 is characterized in that: the content of described annular amine accounts for the 1-50 weight % of amine and solvent total amount.
5, photoresist remover composition as claimed in claim 1 or 2 is characterized in that: described solvent is proton polar solvent, aprotic polar solvent or their potpourri.
6, photoresist remover composition as claimed in claim 5 is characterized in that: described proton polar solvent is more than one glycol ether compounds of selecting from ethylene glycol monomethyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol dimethyl ether, diethylene glycol ether, diethylene glycol butyl ether and diethylene glycol propyl ether.
7, photoresist remover composition as claimed in claim 5, it is characterized in that: aprotic polar solvent is from N-N-methyl-2-2-pyrrolidone N-, N, N-dimethyl acetamide, N, dinethylformamide, dimethyl sulfoxide (DMSO), N, more than one compounds of selecting in N-methylimidazole, gamma-butyrolactone, the sulfolane.
8, photoresist remover composition as claimed in claim 2 is characterized in that: described antiseptic is selected from triazolyl compounds, thiol compound, alkyl gallates compounds and composition thereof.
9, photoresist remover composition as claimed in claim 2 is characterized in that: with respect to amine and solvent total amount 100 weight portions, the content of described antiseptic is the 0.1-10 weight portion.
10, photoresist remover composition as claimed in claim 1 or 2 is characterized in that: described to peel off promoter be more than one compounds of selecting by in the represented compound of following Chemical formula 1, Chemical formula 2 and chemical formula 3,
[Chemical formula 1]
Figure A2005101028490003C1
[Chemical formula 2]
Figure A2005101028490003C2
[chemical formula 3]
In described Chemical formula 1 and the Chemical formula 2, R represents that carbon number is the alkyl of 1-4, and R ' expression carbon number is alkyl or the hydroxyl alkyl of 1-20.
11, photoresist remover composition as claimed in claim 1 or 2 is characterized in that: with respect to amine and solvent total amount 100 weight portions, the described content of peeling off promoter is the 0.01-10 weight portion.
12, photoresist remover composition as claimed in claim 1 is characterized in that: account for composition 100 weight portions that 1-50 weight %, proton polar solvent account for 50-99 weight % with respect to annular amine, the described content of peeling off promoter is the 0.01-10 weight portion.
13, photoresist remover composition as claimed in claim 2 is characterized in that: account for composition 100 weight portions that 1-50 weight %, proton polar solvent account for 50-99 weight % with respect to annular amine, the described content of peeling off promoter is the 0.01-10 weight portion.
14, photoresist remover composition as claimed in claim 1, it is characterized in that: account for composition 100 weight portions that 1-50 weight %, aprotic polar solvent account for 50-99 weight % with respect to annular amine, the described content of peeling off promoter is the 0.01-10 weight portion.
15, photoresist remover composition as claimed in claim 2, it is characterized in that: account for composition 100 weight portions that 1-50 weight %, aprotic polar solvent account for 50-99 weight % with respect to annular amine, the content of described antiseptic is the 0.1-10 weight portion, and the described content of peeling off promoter is the 0.01-10 weight portion.
16, photoresist remover composition as claimed in claim 1, it is characterized in that: account for 1-50 weight %, proton polar solvent with respect to annular amine and account for composition 100 weight portions that 10-80 weight %, aprotic polar solvent account for 15-70 weight %, the described content of peeling off promoter is the 0.01-10 weight portion.
17, photoresist remover composition as claimed in claim 2, it is characterized in that: account for 5-30 weight %, proton polar solvent with respect to annular amine and account for composition 100 weight portions that 10-80 weight % and aprotic polar solvent account for 15-70 weight %, the content of described antiseptic is 0.1-10 weight, and the described content of peeling off promoter is the 0.01-10 weight portion.
CN200510102849A 2004-09-13 2005-09-13 Photoresist stripping liquid composition Active CN100578368C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040072921 2004-09-13
KR1020040072921A KR20060024478A (en) 2004-09-13 2004-09-13 Composition for removing a photoresist

Publications (2)

Publication Number Publication Date
CN1758144A true CN1758144A (en) 2006-04-12
CN100578368C CN100578368C (en) 2010-01-06

Family

ID=36158552

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510102849A Active CN100578368C (en) 2004-09-13 2005-09-13 Photoresist stripping liquid composition

Country Status (4)

Country Link
JP (1) JP2006079093A (en)
KR (1) KR20060024478A (en)
CN (1) CN100578368C (en)
TW (1) TWI402636B (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102472985A (en) * 2009-08-11 2012-05-23 东友Fine-Chem股份有限公司 Resist stripping solution composition, and method for stripping resist by using same
CN101794087B (en) * 2009-11-26 2013-04-17 株式会社Lg化学 Stripper composition for photoresist and method for using the stripper composition to strip the photoresist
CN103425001A (en) * 2013-07-19 2013-12-04 杨桂望 Resist membrane cleaning composition
CN104597728A (en) * 2013-10-30 2015-05-06 三星显示有限公司 Stripping liquid and method for manufacturing display device using the same
TWI494712B (en) * 2013-09-02 2015-08-01 Panasonic Corp Photoresist stripping solution
CN104903794A (en) * 2013-05-07 2015-09-09 株式会社Lg化学 Stripper composition for removing photoresist and method for stripping photoresist using same
CN107667094A (en) * 2015-05-28 2018-02-06 艺康美国股份有限公司 Water-soluble pyrazole derivatives as corrosion inhibitor
CN108345190A (en) * 2017-01-25 2018-07-31 东友精细化工有限公司 Anticorrosive additive stripping liquid controlling composition
CN108828910A (en) * 2018-06-21 2018-11-16 深圳达诚清洗剂有限公司 A kind of positive photoresist cleaning combination and preparation method thereof
CN113614647A (en) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 Resist stripping liquid
US11306400B2 (en) 2015-05-28 2022-04-19 Ecolab Usa Inc. 2-substituted imidazole and benzimidazole corrosion inhibitors

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101136026B1 (en) 2004-09-24 2012-04-18 주식회사 동진쎄미켐 Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same
JP4902299B2 (en) * 2006-09-11 2012-03-21 三星電子株式会社 Manufacturing method of display device
KR20100003526A (en) * 2008-07-01 2010-01-11 삼성전자주식회사 Stripper and method for manufacturing display panel using the same
JP5279921B2 (en) * 2009-11-26 2013-09-04 エルジー・ケム・リミテッド Photoresist stripper composition and photoresist stripping method using the same
TWI405053B (en) * 2009-11-27 2013-08-11 Lg Chemical Ltd Stripper composition for photoresist and method for stripping photoresist
US9865475B2 (en) 2012-12-18 2018-01-09 Npics Inc. Dry separation method using high-speed particle beam
WO2014181992A1 (en) * 2013-05-07 2014-11-13 주식회사 엘지화학 Stripper composition for removing photoresist and method for stripping photoresist using same
KR101586453B1 (en) * 2014-08-20 2016-01-21 주식회사 엘지화학 Stripper composition for removing photoresist and stripping method of photoresist using the same
ES2899038T3 (en) 2015-05-28 2022-03-09 Ecolab Usa Inc New corrosion inhibitors
EP3314038B1 (en) 2015-05-28 2021-12-29 Ecolab Usa Inc. Purine-based corrosion inhibitors
US11402759B2 (en) 2015-06-13 2022-08-02 Npics Inc. Dry separation apparatus, nozzle for generating high-speed particle beam for dry separation
TWI812342B (en) * 2021-11-22 2023-08-11 南韓商Ｌｇ化學股份有限公司 Stripper composition for removing photoresist and stripping method of photoresist using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000162788A (en) * 1998-11-27 2000-06-16 Tokyo Ohka Kogyo Co Ltd Stripping solution composition for photoresist used for copper circuit forming substrate and resist stripping method by using same
JP4229552B2 (en) * 1998-12-25 2009-02-25 東京応化工業株式会社 Photoresist stripping composition and photoresist stripping method using the same
JP2001183849A (en) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd Remover for photoresist and method for removing photoresist using same
EP1138726B1 (en) * 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
JP4470328B2 (en) * 2001-02-09 2010-06-02 東ソー株式会社 Resist stripper
JP2002244310A (en) * 2001-02-21 2002-08-30 Tosoh Corp Resist removing agent
JP4483114B2 (en) * 2001-03-30 2010-06-16 東ソー株式会社 Resist stripper
JP4165208B2 (en) * 2002-12-24 2008-10-15 東ソー株式会社 Resist stripping method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102472985A (en) * 2009-08-11 2012-05-23 东友Fine-Chem股份有限公司 Resist stripping solution composition, and method for stripping resist by using same
US9081291B2 (en) 2009-08-11 2015-07-14 Dongwoo Fine-Chem Co., Ltd. Resist stripping solution composition, and method for stripping resist by using same
CN101794087B (en) * 2009-11-26 2013-04-17 株式会社Lg化学 Stripper composition for photoresist and method for using the stripper composition to strip the photoresist
CN104903794B (en) * 2013-05-07 2019-07-05 株式会社Lg化学 For removing the remover combination of photoresist and the stripping means of the photoresist using it
CN104903794A (en) * 2013-05-07 2015-09-09 株式会社Lg化学 Stripper composition for removing photoresist and method for stripping photoresist using same
CN103425001A (en) * 2013-07-19 2013-12-04 杨桂望 Resist membrane cleaning composition
TWI494712B (en) * 2013-09-02 2015-08-01 Panasonic Corp Photoresist stripping solution
CN104597728A (en) * 2013-10-30 2015-05-06 三星显示有限公司 Stripping liquid and method for manufacturing display device using the same
CN104597728B (en) * 2013-10-30 2020-05-01 三星显示有限公司 Stripping liquid and method for manufacturing display device using the same
CN107667094A (en) * 2015-05-28 2018-02-06 艺康美国股份有限公司 Water-soluble pyrazole derivatives as corrosion inhibitor
US11306400B2 (en) 2015-05-28 2022-04-19 Ecolab Usa Inc. 2-substituted imidazole and benzimidazole corrosion inhibitors
CN108345190A (en) * 2017-01-25 2018-07-31 东友精细化工有限公司 Anticorrosive additive stripping liquid controlling composition
CN108828910A (en) * 2018-06-21 2018-11-16 深圳达诚清洗剂有限公司 A kind of positive photoresist cleaning combination and preparation method thereof
CN113614647A (en) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 Resist stripping liquid

Also Published As

Publication number Publication date
TWI402636B (en) 2013-07-21
KR20060024478A (en) 2006-03-17
TW200617624A (en) 2006-06-01
JP2006079093A (en) 2006-03-23
CN100578368C (en) 2010-01-06

Similar Documents

Publication Publication Date Title
CN1758144A (en) Photorresist stripping liquid composite
CN102486620B (en) The photoresist lift off compositions comprising uncle's alkanolamine for process for manufacturing liquid crystal display
CN101454872B (en) Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition
CN1501179A (en) Cleaning liquid used in photolithography and a method for treating substrate therewith
US20160238945A1 (en) Novel photoresist stripper and application process thereof
CN1950755A (en) Composition for removing a (photo)resist
JPH0374826B2 (en)
CN101042543A (en) Chemical cleaning composition for cleaning resist remover
KR101710171B1 (en) Stripper composition for removing photoresist and stripping method of photoresist using the same
CN1950754A (en) Composition for removing a (photo)resist
CN101017333A (en) Positive photosensitive resist release agent compositions
JP2017530377A (en) Stripper composition for removing photoresist and method for stripping photoresist using the same
CN102103334B (en) Resist remover composition
KR101213735B1 (en) Composition for removing a photoresist
CN1439932A (en) Composition for stripping photoresist
KR101721262B1 (en) Resist stripper composition and a method of stripping resist using the same
KR101213736B1 (en) Composition for removing a photoresist
KR20160024574A (en) Resist stripper composition and a method of stripping resist using the same
CN1920672A (en) Stripping solution composition for removing transparent conductive film and photoresist
KR20040088990A (en) Photoresist stripping composition
KR101686175B1 (en) Stripper composition for removing photoresist and stripping mthod of photoresist using the same
KR20040088989A (en) Anti-corrosive agent for stripping photoresist and photoresist stripping composition using the same
CN1248057C (en) Resist remover compsn.
WO2005035828A1 (en) Photoresist stripping composition
KR20170141581A (en) Resist stripper composition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant