CN101042543A - Chemical cleaning composition for cleaning resist remover - Google Patents
Chemical cleaning composition for cleaning resist remover Download PDFInfo
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- CN101042543A CN101042543A CNA2007100866235A CN200710086623A CN101042543A CN 101042543 A CN101042543 A CN 101042543A CN A2007100866235 A CNA2007100866235 A CN A2007100866235A CN 200710086623 A CN200710086623 A CN 200710086623A CN 101042543 A CN101042543 A CN 101042543A
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H15/00—Tents or canopies, in general
- E04H15/30—Tents or canopies, in general convertible, e.g. from one type tent to another type tent, from tent to canopy or from tent cover into diverse articles
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H15/00—Tents or canopies, in general
- E04H15/32—Parts, components, construction details, accessories, interior equipment, specially adapted for tents, e.g. guy-line equipment, skirts, thresholds
- E04H15/34—Supporting means, e.g. frames
- E04H15/44—Supporting means, e.g. frames collapsible, e.g. breakdown type
- E04H15/48—Supporting means, e.g. frames collapsible, e.g. breakdown type foldable, i.e. having pivoted or hinged means
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H15/00—Tents or canopies, in general
- E04H15/32—Parts, components, construction details, accessories, interior equipment, specially adapted for tents, e.g. guy-line equipment, skirts, thresholds
- E04H15/58—Closures; Awnings; Sunshades
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H15/00—Tents or canopies, in general
- E04H15/32—Parts, components, construction details, accessories, interior equipment, specially adapted for tents, e.g. guy-line equipment, skirts, thresholds
- E04H15/64—Tent or canopy cover fastenings
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H15/00—Tents or canopies, in general
- E04H15/32—Parts, components, construction details, accessories, interior equipment, specially adapted for tents, e.g. guy-line equipment, skirts, thresholds
- E04H2015/326—Frame members connected by elastic cord
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Abstract
The invention relates to a chemical cleaning composition for cleaning a resist remover, specifically, the invention comprises: a)0.05 to 10 parts by weight of an organic amine compound; b)0.05 to 30 parts by weight of an organic solvent; c)0.005 to 5 parts by weight of a triazole preservative; d)0.005 to 5 parts by weight of a preservative selected from the group consisting of hydroxyphenols, alkyl gallates and reducing agents; e) the balance of water. The chemical cleaning composition for cleaning a resist remover of the present invention has excellent cleaning ability, can prevent corrosion of a metal film layer, can replace alcohol compounds, which are pyrophoric substances such as methanol, ethanol, isopropanol, etc. used in the conventional cleaning process, and can effectively clean organic foreign matters such as a remover, etc. remaining on a substrate, and inorganic foreign matters such as dust, etc.
Description
Technical field
The present invention relates to the chemical cleaning composite in a kind of TFT-LCD of can be used for or the process for manufacture of semiconductor device, relate more specifically to a kind of chemical cleaning composite that is used to clean the resist remover.It has excellent cleansing power, can prevent the corrosion of metal film, does not have the problem of incendivity, storage characteristics and environment aspect.Especially, employed alcohol compound in its alternative cleaning in the past.And because Cu layer (copper layer) has very strong foreign organic matter characterization of adsorption, it can be created in the foreign matter that can't see on the existing layer (layer), and the present invention has remarkable cleaning performance to it.
Background technology
When generally making TFT-LCD or semiconductor element by photoetching process (photolithography method), at glass (glass), on the silicon wafer substrates such as (silicon wafer), form aluminium (aluminum), aluminium alloy (aluminum alloy), behind the dielectric film of copper metal films such as (copper) or oxide film etc., evenly apply resist (resist) in its surface, afterwards it is exposed and development treatment, after forming resist pattern (resist pattern), again with described resist pattern as mask (mask), etching selectively (etching) lower film forms pattern.Use remover (stripper) from substrate, to remove unnecessary resist fully afterwards.
Existing disclosedly as the remover of removing resist from aforesaid substrate be to be the organic sulfonic acid class remover (organicsulfonic acid-based stripper) of major component, to be the organic amine remover (organic amine-based stripper) etc. of major component with monoethanolamine organic amines such as (monoethanol amine) with alkyl benzene sulphonate (alkylbenzene sulfonic acid).Yet, because there is safety issue in organic sulfonic acid class remover (organic sulfonic acid-based stripper) when operation, mainly use with the organic amine remover (organic amine-based stripper) of organic amines such as monoethanolamine as major component in recent years.
So use organic amine remover (organic amine-based stripper) to remove resist patterned layer (resist pattern layer) and afterwards, use the pure water cleaning base plate usually.Yet the pure water cleaning is difficult to clean fully at short notice remover, and if scavenging period long, metal film and dielectric film can corrode, and therefore, before cleaning with pure water, clean remover with chemical cleaning composite.
In the past, mainly used methyl alcohol (methanol), ethanol (ethanol), isopropyl alcohol (isopropyl alochol), acetone (acetone), dimethyl sulfoxide (dimethylsulfoxidc) etc. as chemical cleaning composite.And above-mentioned solvent does not have sufficient cleansing power, especially is difficult to carry out the cleaning of small circuit part.And above-mentioned alcohols (alcohol series) solvent, should be specifically noted that when operation that therefore, operating efficiency reduces because it has certain problem on incendivity or storage characteristics.In addition, it also has the rising of technology cost and can't solve shortcomings such as organic detritus on the specific wiring material.
In addition, Korean Patent discloses to disclose for 2004-0037463 number peels off (post strip) cleansing composition after a kind of, and it comprises the alkanolamine (alkanol amine) of 0.01 weight portion～10 weight portions, the aklylene glycol alkyl ether of 0.01 weight portion～50 weight portions (alkylene glycol alkyl ether), the Hydroxybenzenes (hydroxybenzene series (phenolseries)) of 0.01 weight portion～10 weight portions and the deionized water of surplus.Yet said method the corrosion phenomenon of metallic diaphragm can occur owing to use streptamine (chain-typeamine) on metal line.
Summary of the invention
The present invention does in view of the above problems, its purpose is to provide after a kind of cleaning not can corroding metal rete and cleaning (rinse) effect excellence, and can substitute employed in the past alcohols (alcohol series) compound, thereby solve the chemical cleaning composite that is used to clean the resist remover of incendivity, storage characteristics and environment aspect defective.
In order to address the above problem, the invention provides a kind of chemical cleaning composite that is used to clean the resist remover, it comprises: a) organic amine compound of 0.05 weight portion～10 weight portions (organicamine-based compound); B) organic solvent (organicsolvent) of 0.05 weight portion～30 weight portions; C) the triazole type antiseptic of 0.005 weight portion～5 weight portions (triazole-basedanti-corrosion agent); D) 0.005 weight portion～5 weight portions is selected from antiseptic in hydroxy benzenes phenols (hydroxyphenol series), gallic acid alkane ester class (alkyl gallate series) and the reductive agent class (reducing agent series); E) excess water.
Description of drawings
Fig. 1 is the chemical cleaning composite that utilizes the embodiment of the invention (a) and comparative example (b), and the foreign organic matter on the cleaning base plate-pressure is polluted before release agent (the stripper waste solution) waste liquid and optical electron microscope photo afterwards.
Fig. 2 is the chemical cleaning composite that utilizes the embodiment of the invention (a) and comparative example (b), before the inorganic foreign matter-dust on the cleaning base plate and optical electron microscope photo afterwards.
Fig. 3 is the chemical cleaning composite that utilizes the embodiment of the invention (a) and comparative example (b), before the foreign organic matter-fingerprint on the cleaning base plate and optical electron microscope photo afterwards.
Embodiment
Below, the present invention is described in detail.
The present invention relates to a kind of chemical cleaning composite that is used to clean the resist remover, after its fundamental purpose is to clean in the manufacturing process of TFT-LCD or semiconductor element resist (resist) is finally removed residual release agent solution.
Chemical cleaning composite of the present invention also can prevent the corrosion of metal film when having excellent cleansing power, and not have the problem of incendivity, storage characteristics and environment aspect.Especially, adopt the present invention, can substitute in the past employed alcohol compound in the cleaning.And because Cu layer (copperlayer) has very strong foreign organic matter characterization of adsorption, it can be created in the foreign matter that can't see on the existing layer (layer), and the present invention has remarkable cleaning performance to it.
Chemical cleaning composite of the present invention comprises, at least a organic amine (organic amineseries), at least a organic solvent (organic solvent), water (water), at least a triazole type antiseptic (triazole-based anti-corrosion agent) and at least a antiseptic that is selected from hydroxy benzenes phenols (hydroxyphenol series), gallic acid alkane ester (alkyl gallateseries) and the reductive agent class (reducing agent series).
Above-mentioned organic amine compound preferably uses cyclic amine, but not uses general streptamine.Above-mentioned cyclic amine is compared with streptamine, its to the corrosion strength of metallic diaphragm a little less than, less when therefore cleaning to the corrosion of metallic diaphragm.Above-mentioned cyclic amine specifically can be used and be selected from 1-(2-hydroxyethyl) piperazine (1-(2-hydroxyethyl) piperazine), 4-(3-aminopropyl) morpholine (4-(3-aminopropyl) morpholine), 1-(2-aminoethyl) piperazine (1-(2-aminoethyl) piperazine), 1-(2-hydroxyethyl)-4-ethyl piperazidine (1-(2-hydroxyethyl)-4-ethylpiperazine), 4-amino-1-methyl piperazine (4-amino-1-methyl piperazine), 1-methyl piperazine (1-methylpiperazine), 2-methyl piperazine (2-methylpiperazine), 1-benzyl diethylenediamine (1-benzylpiperazine), and at least a compound in the 2-phenylpiperazine (2-phenylpiperazine).Preferably use the above-mentioned organic amine compound of 0.05 weight portion～10 weight portions based on the total amount of composition.If its content is lower than 0.05 weight portion, cleansing power will reduce, if surpass 10 weight portions, then because the corrosion strength of amine will damage metallic diaphragm.
In the chemical cleaning composite of the present invention, the preferred use of above-mentioned organic solvent (organic solvent) is selected from ethylene glycol monomethyl ether (ethyleneglycol methyl ether), ethylene glycol ethyl ether (ethyleneglycol ethyl ether), butyl glycol ether (ethyleneglycol butylether), diethylene glycol methyl ether (diethyleneglycol methyl ether), DGDE (diethyleneglycol ethyl ether), butyl carbitol (diethyleneglycol butylether), and at least a glycol ether compound (glycol ether compound) in the diglycol propyl ether (diethyleneglycol propyl ether).Preferably use the above-mentioned solvent of 0.05 weight portion～30 weight portions based on the total amount of composition.If its content is lower than 0.05 weight portion, will reduce dissolving power to resist and organic amine compound, if surpass 30 weight portions, then be difficult to dispose waste liquid.
Above-mentioned triazole type antiseptic forms chemisorption (chemisorption) by triazole (triazole) molecule with strong combination of metal surface, thereby stops the infiltration of organic amine composition, produces antiseptic effect.Above-mentioned triazole type antiseptic preferably uses at least a compound that is selected from the compound of being represented by following Chemical formula 1.
[Chemical formula 1]
In the above-mentioned Chemical formula 1, R
1Be the alkyl (alkyl group) of C1-C12, allyl (allyl group), carboxyl (carboxyl group), hydroxyl (hydroxyl group) or the amino (amino group) of C1-C12; R
2Alkyl (alkyl group) for C1-C12, hydroxyl (hydroxyl group), the hydroxy alkyl of C1-C12 (hydroxylalkyl group), the dihydroxy alkyl of C1-C12 (dihydroxylalkyl group), the carboxyalkyl of C1-C12 (carboxylalkyl group), carboxyl (carboxyl group), the dicarboxyl alkyl of C1-C12 (dicarboxylalkyl group), amino (amino group), the alkyl amino of C1-C12 (alkylamino group), the perhaps dialkyl amido of C1-C12 (dialkyl amino group).
Above-mentioned triazole type is more preferably used and is selected from two (hydroxyethyl) aminoethyls of methylbenzotrazole (Tolyltriazole), benzotriazole (Benzotriazole), aminotriazole(ATA) (aminotriazole), carboxyl benzotriazole (carboxylbenzotriazole), 1-[] methylbenzotrazole (1-[bis (hydroxyethyl) aminoethyl] tolyltriazole), I-hydroxybenzotriazole (1-hydroxybenzotriazole, HBT) and nitrobenzene and triazolam (nitrobenzotriazole, NBT) at least a compound in.
Above-mentioned triazole type antiseptic is the solid shape at normal temperatures, and is difficult to water-solublely, therefore, preferably it is dissolved in before use and is prepared into liquid solvent in the organic solvent.
Preferably use the above-mentioned triazole type antiseptic of 0.005 weight portion～5 weight portions based on the total amount of composition.If the content of above-mentioned triazole type antiseptic is lower than 0.005 weight portion, will the corroding metal rete, if surpass 5 weight portions, foam then appears in cleaning, process will face difficulty.
Above-mentioned hydroxy benzenes phenols (hydroxyphenol series) or gallic acid alkane ester (alkylgallate series) antiseptic preferably use at least a compound that is selected from the compound of being represented by following Chemical formula 2.
[Chemical formula 2]
In the above-mentioned Chemical formula 2, R
1～R
3Be respectively hydrogen (hydrogen), hydroxyl (hydroxyl group) or carboxyl (carboxyl group); R
4Carbalkoxy (alkyl ester group), carboxyl (carboxyl group) or hydrogen (hydrogen) for C1-C12.
Above-mentioned hydroxy benzenes phenols (hydroxyphenol series) or gallic acid alkane ester (alkylgallate series) antiseptic more preferably use and are selected from catechol (catechol), pyrogallol (pyrogallol), gallicin (methyl gallate), n-propyl gallate (propylgallate), gallic acid dodecane ester (dodecyl gallate), octyl gallate (octylgallate), and at least a compound in the gallic acid (gallic acid).
Described reductive agent class antiseptic is selected from least a in L-ascorbic acid (L-ascorbic acid), D-arabo-ascorbic acid (D-isoascorbic acid) and composition thereof.
The above-mentioned antiseptic that is selected from hydroxy benzenes phenols, gallic acid alkane ester and the reductive agent class, its total amount based on composition is preferably used 0.005 weight portion～5 weight portions.At this moment, if the content of hydroxy benzenes phenols or gallic acid alkane ester antiseptic is lower than 0.005 weight portion, will the corroding metal rete; If surpass 5 weight portions, then produce foam in the cleaning, process will face difficulty.In addition, if the content of above-mentioned reductive agent class antiseptic is lower than 0.005 weight portion, will the corroding metal rete; If surpass 5 weight portions, then the basicity of cleaning fluid descends, and will reduce cleaning performance.
In addition, the chemical cleaning composite of resist remover is cleaned in involved in the present invention being used to, and also can comprise excess water as neccessary composition, and preferably comprises 50 weight portions～99 weight portions.If the content of above-mentioned water is lower than 50 weight portions, when disposing waste liquid, will go wrong, if the content of water surpasses 99 weight portions, will reduce cleansing power.
Above-mentioned water preferably uses the pure water that filters by ion exchange resin, more preferably uses resistivity to be the ultra-pure water more than the 18M Ω.
In addition, chemical cleaning composite of the present invention also can comprise at least a silicon system (silicon series) defoamers of 0.005 weight portion～5 weight portions based on the total amount of composition.Described silicon is that defoamer is, is selected to be at least 740 hydrophobicity polysiloxane (polysiloxane) or dimethyl siloxane (demethylsiloxane) and molecular weight by molecular weight and to be at least at least a in the defoamer that 300 Hydrophilicrto polyether (polyether) copolymerization forms.If the content of above-mentioned defoamer is lower than 0.005 weight portion, then can't eliminate bubble fully, if surpass 5 weight portions, defoamer then can not be dissolved in the solution fully, thereby gonorrhoea can occur.
Below, with reference to embodiment, illustrate in greater detail the present invention.These embodiment just are used for illustrating the present invention, and are not to be used to limit the present invention.
Embodiment 1～8, and comparative example 1～6
According to following table 1 and table 2, the preparation chemical cleaning composite.
[table 1]
| The composition of chemical cleaning composite (weight portion) | |||||||||
| AEP | HEP | Water | EGME | BT | The D-arabo-ascorbic acid | Pyrogallol | Defoamer | ||
| 1 | 0.1 | 0.3 | 98.47 | 1 | 0.2 | 0.01 | 0.01 | ||
| Embodiment | 2 | 0.4 | 98.67 | 1 | 0.2 | 0.01 | |||
| 3 | 0.4 | 98.87 | 1 | 0.2 | 0.01 | 0.01 | |||
| 4 | 0.1 | 0.3 | 99.51 | 0.5 | 0.06 | - | 0.02 | 0.01 | |
| 5 | 0.2 | 0.2 | 99.52 | 0.5 | 0.06 | - | 0.02 | - | |
| 6 | 0.3 | 0.1 | 99.52 | 0.5 | 0.06 | - | 0.02 | - | |
| 7 | 0.5 | - | 99.4 | 0.5 | 0.08 | - | 0.02 | - | |
| 8 | - | 0.5 | 99.4 | 0.5 | 0.08 | - | 0.02 | - |
[table 2]
| The composition of chemical cleaning composite (weight portion) | |||||||||
| IPA | MEA | TMAH 20％ | Succinic acid (succinic acid) | Oxalic acid (oxalic acid) | Citric acid (citric acid) | Water | EGME | ||
| Comparative example | 1 | - | - | 1 | - | - | 99 | - | |
| 2 | - | - | - | 1 | - | 99 | - | ||
| 3 | - | - | - | - | 1 | 99 | - | ||
| 4 | - | 2 | - | - | - | - | 98 | - | |
| 5 | - | 1 | - | - | - | - | 99 | - | |
| 6 | - | 2 | - | - | - | 98 | - | ||
| 7 | 100 | - | - | - | - | - | |||
| 8 | 1 | - | - | - | - | 99 | - | ||
| 9 | - | 100 | |||||||
Notes) in above-mentioned table 1 and the table 2,
TMAH: Tetramethylammonium hydroxide (tetra-methyl ammonium hydroxide)
AEP:1-(2-aminoethyl) piperazine (1-(2-aminoethyl) piperazine)
HEP:1-(3-hydroxyethyl) piperazine (1-(3-hydroxyethyl) piperazine)
EGME: ethylene glycol monomethyl ether (ethyleneglycol methyl ether)
BT: benzotriazole (benzotriazole)
D-arabo-ascorbic acid (D-isoascorbic acid)
Defoamer: molecular weight is the polysiloxane (polysiloxane) more than 900 and the copolymer of polyethers (polyether)
IPA: isopropyl alcohol (isopropyl alcohol)
MEA: monoethanolamine (monoethanol amine)
Test example 1
Washing test to foreign organic matter (fingerprint, remover waste liquid)
On glass what cleaned with ultra-pure water, after arbitrarily pressing fingerprint formation foreign organic matter (fingerprint), it was flooded 5 minutes in the chemical cleaning composite of the foregoing description and comparative example, use optical electron microscope (LEICA commercial firm, model: FTM-200) after the mensuration its result is illustrated in table 3 afterwards.
In addition, on glass what cleaned with ultra-pure water, after being stained with the remover waste liquid, with well heater under 90 ℃ temperature dry 5 hours, in the chemical cleaning composite of the foregoing description and comparative example, flood after 5 minutes afterwards, with optical electron microscope (LEICA commercial firm, model: FTM-200) measure, afterwards its result is illustrated in table 3.
Test example 2
Washing test to inorganic foreign matter
On glass what cleaned with ultra-pure water, after arbitrarily being stained with dust and forming inorganic foreign matter (dust), dipping is 5 minutes in the chemical cleaning composite of the foregoing description and comparative example, use optical electron microscope (LEICA commercial firm afterwards, model: FTM-200) after the measurement result, it is illustrated in table 3.
Observe the damage (damage) of metallic diaphragm
At room temperature, single aluminium base (momo-aluminiumsubstrate) that will clean with ultra-pure water, dipping is 30 minutes in the chemical cleaning composite of the foregoing description and comparative example, afterwards above-mentioned test piece is cleaned with ultra-pure water, behind nitrogen drying, with whether corroding in flying-spot microscope (SEM) check pattern, and its result is illustrated in table 3.
In addition, to take pictures by optical electron microscope, by the chemical cleaning composite of embodiments of the invention (a) and comparative example (b), the foreign organic matter on the cleaning base plate-pressure is polluted before release agent waste liquid, dust and the fingerprint and photo afterwards is illustrated respectively in Fig. 1～Fig. 3.
[table 3]
| Fingerprint | Dust | The remover waste liquid | Metal film | ||
| Embodiment | 1 | Well | Well | Well | Well |
| 2 | Well | Well | Well | Well | |
| 3 | Well | Well | Well | Well | |
| 4 | Well | Well | Well | Well | |
| 5 | Well | Well | Well | Well | |
| 6 | Well | Well | Well | Well | |
| 7 | Well | Well | Well | Well | |
| 8 | Well | Well | Well | Well | |
| Comparative example | 1 | Well | Bad | Bad | Bad |
| 2 | Well | Bad | Bad | Bad | |
| 3 | Well | Bad | Bad | Bad | |
| 4 | Well | Well | Well | Bad | |
| 5 | Well | Well | Well | Bad | |
| 6 | Well | Well | Well | Bad | |
| 7 | Bad | Bad | Bad | Well | |
| 8 | Well | Bad | Well | Well | |
| 9 | Well | Bad | Well | Well | |
In the above-mentioned table 3, the revolution mark of [well] expression foreign matter is no more than 2% of test piece area, and [bad] expression revolution mark surpasses more than 50%.
The chemical cleaning composite that is used to clean the resist remover involved in the present invention, have excellent cleansing power and can prevent the corrosion of metal film, and there is not a problem of aspects such as incendivity, storage characteristics and environment, and alcohols chemical substance such as employed isopropyl alcohol in the alternative cleaning in the past, for the removal of organic and inorganic foreign matter, has remarkable effect.
Claims (10)
1. chemical cleaning composite that is used to clean the resist remover is characterized in that said composition comprises:
A) organic amine compound of 0.05 weight portion～10 weight portions (organic amine-basedcompound);
B) organic solvent of 0.05 weight portion～30 weight portions (organic solvent);
C) the triazole type antiseptic of 0.005 weight portion～5 weight portions (triazole-basedanti-corrosion agent);
D) 0.005 weight portion～5 weight portions is selected from antiseptic in hydroxy benzenes phenols (hydroxyphenol serics), gallic acid alkane ester class (alkyl gallate series) and the reductive agent class (reducing agentseries);
E) excess water.
2. the chemical cleaning composite that is used to clean the resist remover according to claim 1 is characterized in that: described organic amine compound is for being selected from 1-(2-hydroxyethyl) piperazine (1-(2-hydroxyethyl) piperazine), 4-(3-aminopropyl) morpholine (4-(3-aminopropyl) morpholine), 1-(2-aminoethyl) piperazine (1-(2-aminoethyl) piperazine), 1-(2-hydroxyethyl)-4-ethyl piperazidine (1-(2-hydroxyethyl)-4-ethylpiperazine), 4-amino-1-methyl piperazine (4-amino-1-methyl piperazine), 1-methyl piperazine (1-methylpiperazine), 2-methyl piperazine (2-methylpiperazine), at least a cyclic amine in 1-benzyl diethylenediamine (1-benzylpiperazine) and the 2-phenylpiperazine (2-phenylpiperazine).
3. the chemical cleaning composite that is used to clean the resist remover according to claim 1 is characterized in that: described organic solvent (organic solvent) is for being selected from ethylene glycol monomethyl ether (ethyleneglycol methyl ether), ethylene glycol ethyl ether (ethyleneglycol ethylether), butyl glycol ether (ethyleneglycol butyl ether), diethylene glycol methyl ether (diethyleneglycol methyl ether), DGDE (diethyleneglycol ethylether), at least a glycol ether compound (glycolether compound) in butyl carbitol (diethyleneglycol butyl ether) and the diglycol propyl ether (diethyleneglycol propyl ether).
4. the chemical cleaning composite that is used to clean the resist remover according to claim 1 is characterized in that: described triazole type is at least a compound that is selected from the compound of being represented by following Chemical formula 1,
[Chemical formula 1]
In the above-mentioned Chemical formula 1, R
1Be the alkyl (alkyl group) of C1-C12, allyl (allyl group), carboxyl (carboxyl group), hydroxyl (hydroxyl group) or the amino (amino group) of C1-C12; R
2Alkyl (alkyl group) for C1-C12, hydroxyl (hydroxylgroup), the hydroxy alkyl of C1-C12 (hydroxylalkyl group), the dihydroxy alkyl of C1-C12 (dihydroxylalkyl group), the carboxyalkyl of C1-C12 (carboxylalkyl group), carboxyl (carboxyl group), the dicarboxyl alkyl of C1-C12 (dicarboxylalkyl group), amino (amino group), the dialkyl amido of the alkyl amino of C1-C12 (alkylamino group) or C1-C12 (dialkyl amino group).
5. the chemical cleaning composite that is used to clean the resist remover according to claim 1, it is characterized in that: described triazole type is for being selected from methylbenzotrazole (Tolyl triazole), benzotriazole (Benzotriazole), aminotriazole(ATA) (aminotriazole), carboxyl benzotriazole (carboxylbenzotriazole), two (hydroxyethyl) aminoethyls of 1-[] methylbenzotrazole (1-[bis (hydroxyethyl) aminoethyl] tolyltriazole), I-hydroxybenzotriazole (1-hydroxy benzotriazole, HBT) and nitrobenzene and triazolam (nitrobenzotriazole, NBT) at least a compound in.
6. the chemical cleaning composite that is used to clean the resist remover according to claim 1, it is characterized in that: described hydroxy benzenes phenols (hydroxyphenol series) or gallic acid alkane ester (alkylgallate series) antiseptic are, be selected from least a in the compound of representing by following Chemical formula 2
[Chemical formula 2]
In the above-mentioned Chemical formula 2, R
1～R
3Be respectively hydrogen (hydrogen), hydroxyl (hydroxyl group) or carboxyl (carboxyl group); R
4Carbalkoxy (alkyl ester group), carboxyl (carboxyl group) or hydrogen (hydrogen) for C1-C12.
7. the chemical cleaning composite that is used to clean the resist remover according to claim 6, it is characterized in that: described hydroxy benzenes phenols (hydroxyphenol series), gallic acid alkane ester (alkylgallate series) is to be selected from catechol (catechol), pyrogallol (pyrogallol), gallicin (methyl gallate), n-propyl gallate (propyl gallate), gallic acid dodecane ester (dodecyl gallate), at least a compound in octyl gallate (octyl gallate) and the gallic acid (gallic acid).
8. the chemical cleaning composite that is used to clean the resist remover according to claim 1 is characterized in that: described reductive agent class antiseptic is to be selected from least a in L-ascorbic acid (L-ascorbic acid), D-arabo-ascorbic acid (D-isoascorbic acid) and composition thereof.
9. the chemical cleaning composite that is used to clean the resist remover according to claim 1 is characterized in that: said composition comprises that also at least a silicon of 0.005 weight portion～5 weight portions is defoamer.
10. the chemical cleaning composite that is used to clean the resist remover according to claim 9 is characterized in that: described silicon is that defoamer is to be selected to be at least 740 hydrophobicity polysiloxane (polysiloxane) or dimethyl siloxane (demethylsiloxane) and molecular weight by molecular weight and to be at least at least a in the defoamer that 300 Hydrophilicrto polyether (polyether) copolymerization forms.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060026545 | 2006-03-23 | ||
| KR10-2006-0026545 | 2006-03-23 | ||
| KR1020060026545A KR101251594B1 (en) | 2006-03-23 | 2006-03-23 | Chemical rinse composition for removing resist stripper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101042543A true CN101042543A (en) | 2007-09-26 |
| CN101042543B CN101042543B (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100866235A Active CN101042543B (en) | 2006-03-23 | 2007-03-23 | Chemical cleaning composition for cleaning resist remover |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2007256955A (en) |
| KR (1) | KR101251594B1 (en) |
| CN (1) | CN101042543B (en) |
| TW (1) | TWI421650B (en) |
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| CN102216854A (en) * | 2008-08-04 | 2011-10-12 | 高级技术材料公司 | Environmentally friendly polymer stripping compositions |
| CN102334069A (en) * | 2009-02-25 | 2012-01-25 | 安万托特性材料股份有限公司 | Composition for cleaning microelectronic based on the acid organic solvent of multi-usage |
| CN102540776A (en) * | 2010-12-30 | 2012-07-04 | 苏州瑞红电子化学品有限公司 | Stripping liquid for removing residual photoresist in semiconductor technology |
| CN103313804A (en) * | 2011-01-18 | 2013-09-18 | 电气化学工业株式会社 | Ultrasonic cleaning method and apparatus |
| CN103425001A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist membrane cleaning composition |
| CN104330959A (en) * | 2014-10-25 | 2015-02-04 | 江阴市化学试剂厂有限公司 | Preparation method of photoresist stripping liquid |
| CN106591870A (en) * | 2017-01-04 | 2017-04-26 | 河北医科大学 | Silver electrode surface cleaning protective agent and preparing method thereof |
| CN107850859A (en) * | 2014-12-30 | 2018-03-27 | 富士胶片电子材料美国有限公司 | For removing the stripping composition of photoresist on semiconductor substrate |
| CN107908084A (en) * | 2017-11-21 | 2018-04-13 | 东莞市广华化工有限公司 | A kind of new-type inorganic environmental protection moves back film liquid |
| CN110331048A (en) * | 2019-07-02 | 2019-10-15 | 深圳市大正瑞地科技有限公司 | Environmentally friendly stripper solution and preparation method thereof |
| CN110597024A (en) * | 2012-11-13 | 2019-12-20 | 东友精细化工有限公司 | Stain-preventing photoresist stripper composition and method for manufacturing flat panel display substrate |
| CN111381458A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Photoresist cleaning solution |
| CN113176718A (en) * | 2021-05-06 | 2021-07-27 | 肇庆微纳芯材料科技有限公司 | Polyimide stripping liquid, preparation method thereof and cleaning method of polyimide film |
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| KR101082011B1 (en) | 2009-02-05 | 2011-11-10 | 램테크놀러지 주식회사 | Composition for removing photoresist and method of forming a pattern using the composition |
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| JP5279921B2 (en) * | 2009-11-26 | 2013-09-04 | エルジー・ケム・リミテッド | Photoresist stripper composition and photoresist stripping method using the same |
| JP6075556B2 (en) | 2013-07-10 | 2017-02-08 | 株式会社オートネットワーク技術研究所 | Electric wire with terminal |
| KR101710171B1 (en) * | 2014-09-17 | 2017-02-24 | 주식회사 엘지화학 | Stripper composition for removing photoresist and stripping method of photoresist using the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419779A (en) * | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
| US5597420A (en) * | 1995-01-17 | 1997-01-28 | Ashland Inc. | Stripping composition having monoethanolamine |
| US5997658A (en) * | 1998-01-09 | 1999-12-07 | Ashland Inc. | Aqueous stripping and cleaning compositions |
| KR100286860B1 (en) * | 1998-12-31 | 2001-07-12 | 주식회사 동진쎄미켐 | Photoresist Remover Composition |
| JP2001022095A (en) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | Positive type resist removing solution |
| KR100842072B1 (en) * | 2001-05-31 | 2008-06-30 | 에스케이케미칼주식회사 | Photoresist stripper composition and method of stripping photoresist using the same |
| WO2005109108A1 (en) * | 2004-05-07 | 2005-11-17 | Dongjin Semichem Co., Ltd. | Composition for removing a (photo) resist |
| KR101152139B1 (en) * | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | Cleaning material for display device and method for manufacturing thin film transistor array panel using the same |
-
2006
- 2006-03-23 KR KR1020060026545A patent/KR101251594B1/en active IP Right Grant
-
2007
- 2007-03-22 JP JP2007074815A patent/JP2007256955A/en not_active Withdrawn
- 2007-03-23 TW TW096110228A patent/TWI421650B/en active
- 2007-03-23 CN CN2007100866235A patent/CN101042543B/en active Active
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| CN102216854A (en) * | 2008-08-04 | 2011-10-12 | 高级技术材料公司 | Environmentally friendly polymer stripping compositions |
| CN102334069A (en) * | 2009-02-25 | 2012-01-25 | 安万托特性材料股份有限公司 | Composition for cleaning microelectronic based on the acid organic solvent of multi-usage |
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| CN102540776A (en) * | 2010-12-30 | 2012-07-04 | 苏州瑞红电子化学品有限公司 | Stripping liquid for removing residual photoresist in semiconductor technology |
| CN102540776B (en) * | 2010-12-30 | 2013-07-03 | 苏州瑞红电子化学品有限公司 | Stripping liquid for removing residual photoresist in semiconductor technology |
| CN103313804B (en) * | 2011-01-18 | 2016-08-10 | 电化株式会社 | Method for suppersonic cleaning and device |
| CN103313804A (en) * | 2011-01-18 | 2013-09-18 | 电气化学工业株式会社 | Ultrasonic cleaning method and apparatus |
| CN110597024A (en) * | 2012-11-13 | 2019-12-20 | 东友精细化工有限公司 | Stain-preventing photoresist stripper composition and method for manufacturing flat panel display substrate |
| CN110597024B (en) * | 2012-11-13 | 2024-03-08 | 东友精细化工有限公司 | Stain-preventing photoresist stripper composition and method for manufacturing flat panel display substrate |
| CN103425001A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist membrane cleaning composition |
| CN104330959B (en) * | 2014-10-25 | 2018-04-10 | 江阴市化学试剂厂有限公司 | Photoresist lift off liquid and preparation method thereof |
| CN104330959A (en) * | 2014-10-25 | 2015-02-04 | 江阴市化学试剂厂有限公司 | Preparation method of photoresist stripping liquid |
| CN107850859A (en) * | 2014-12-30 | 2018-03-27 | 富士胶片电子材料美国有限公司 | For removing the stripping composition of photoresist on semiconductor substrate |
| CN106591870A (en) * | 2017-01-04 | 2017-04-26 | 河北医科大学 | Silver electrode surface cleaning protective agent and preparing method thereof |
| CN106591870B (en) * | 2017-01-04 | 2018-06-29 | 河北医科大学 | A kind of silver electrode surface cleaning protective agent and preparation method thereof |
| CN107908084A (en) * | 2017-11-21 | 2018-04-13 | 东莞市广华化工有限公司 | A kind of new-type inorganic environmental protection moves back film liquid |
| CN111381458A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Photoresist cleaning solution |
| CN111381458B (en) * | 2018-12-27 | 2024-04-30 | 安集微电子科技（上海）股份有限公司 | Photoresist cleaning solution |
| CN113614647A (en) * | 2019-03-25 | 2021-11-05 | 松下知识产权经营株式会社 | Resist stripping liquid |
| CN110331048A (en) * | 2019-07-02 | 2019-10-15 | 深圳市大正瑞地科技有限公司 | Environmentally friendly stripper solution and preparation method thereof |
| CN110331048B (en) * | 2019-07-02 | 2021-07-20 | 深圳市大正瑞地科技有限公司 | Environment-friendly membrane stripping liquid and preparation method thereof |
| CN113176718A (en) * | 2021-05-06 | 2021-07-27 | 肇庆微纳芯材料科技有限公司 | Polyimide stripping liquid, preparation method thereof and cleaning method of polyimide film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101042543B (en) | 2011-12-28 |
| TW200736857A (en) | 2007-10-01 |
| TWI421650B (en) | 2014-01-01 |
| KR101251594B1 (en) | 2013-04-08 |
| JP2007256955A (en) | 2007-10-04 |
| KR20070096330A (en) | 2007-10-02 |
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