CN1753261B - Integrated semiconductor laser device and method of fabricating the same - Google Patents

Abstract

An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Description

Integrated semiconductor laser device and manufacture method thereof

Technical field

The present invention relates to a kind of integrated semiconductor laser device and manufacture method thereof, relate in particular to the integrated semiconductor laser device and the manufacture method thereof that possess a plurality of semiconductor Laser devices.

Background technology

At present, the integrated semiconductor laser device of the known integrated a plurality of semiconductor Laser devices of stacked direction along semiconductor layer.This integrated semiconductor laser device for example is disclosed in the spy and opens in the 2002-299739 communique.

Figure 133 is the oblique view of the structure of the existing integrated semiconductor laser device of expression.With reference to Figure 133, in existing integrated semiconductor laser device, along integrated the 1st semiconductor Laser device 410 of stacked direction (vertical direction, Z direction) and the 2nd semiconductor Laser device 420 of semiconductor layer.

In the semiconductor element layer 411 that constitutes the 1st semiconductor Laser device 410, form protrusion 412 and recess 413.This protrusion 412 and recess 413 (directions X) last predetermined distance at interval in the horizontal direction dispose.In addition, the neighboring area of the protrusion 412 of semiconductor element layer 411 constitutes the light-emitting zone 414 of the 1st semiconductor Laser device 410.In addition, in the semiconductor element layer 421 that constitutes the 2nd semiconductor Laser device 420, form protrusion 422 and recess 423.This protrusion 422 disposes with recess 423 interval predetermined distance on directions X.In addition, the neighboring area of the protrusion 422 of semiconductor element layer 421 constitutes the light-emitting zone 424 of the 2nd semiconductor Laser device 420.

In addition, through adhesive linkage 415 and 425 fit the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420.Particularly, fit into the position consistency of the recess 423 of the protrusion 412 of the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420, the position consistency of the protrusion 422 of the 2nd semiconductor Laser device 420 and the recess 413 of the 1st semiconductor Laser device 410.

But, with regard to the existing integrated semiconductor laser device shown in Figure 133, the protrusion 412 (protrusion 422) of the 1st semiconductor Laser device 410 (the 2nd semiconductor Laser device 420) does not embed in the recess 423 (recess 413) of the 2nd semiconductor Laser device 420 (the 1st semiconductor Laser device 410).Therefore, when fitting the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420, there is the problem that is difficult to suppress the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420 along continuous straight runs (directions X, Y direction) motion.Thus, be created under the inconsistent each other state of the direction of riving of the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420 problem of fit the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420.Consequently, because the riving property decline when riving the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420 simultaneously, so the problem that exists the laser characteristics that penetrates from splitting surface (light emergence face) to descend.

In addition, with regard to the existing integrated semiconductor laser device shown in Figure 133, the light-emitting zone 414 of the 1st semiconductor Laser device 410 and the light-emitting zone 424 of the 2nd semiconductor Laser device 420 are when along continuous straight runs (directions X) interval predetermined distance disposes, and also stacked direction (Z direction) the interval predetermined distance along semiconductor layer disposes.That is, light-emitting zone 424 along continuous straight runs (directions X) of the light-emitting zone 414 of the 1st semiconductor Laser device 410 and the 2nd semiconductor Laser device 420 dispose with stacked direction (Z direction) the both direction dislocation of semiconductor layer.Therefore, for example compare with the situation that the position of light-emitting zone 424 only misplaces on one of directions X or Z direction direction, exist the light-emitting zone 414 and the location interval of light-emitting zone 424 to become big problem with light-emitting zone 414.Like this, under the big situation of the location interval change of light-emitting zone 414 and light-emitting zone 424, when the ejaculation light that makes integrated semiconductor laser device incides under the situation that optical system (lens and speculum etc.) uses, even if adjust optical axis so that the light that penetrates from one of light-emitting zone 414 and light-emitting zone 424 incides the regulation zone of optical system, the light that penetrates from light- emitting zone 414 and 424 the opposing party also can incide the zone in the regulation zone of departing from optical system sometimes.Consequently, owing to penetrate the optical axis adjustment change difficulty of light with respect to optical system, so the problem that exists the cost of optical axis adjustment cost to increase.

Summary of the invention

The present invention makes in order to address the above problem, and one object of the present invention is to provide a kind of integrated semiconductor laser device, when characteristic of laser is improved, can reduce the cost of optical axis adjustment cost.

Another object of the present invention is to provide a kind of manufacture method that can easily make the integrated semiconductor laser device of integrated semiconductor laser device, this integrated semiconductor laser device can reduce the cost of optical axis adjustment cost when characteristic of laser is improved.

To achieve these goals, the integrated semiconductor laser device of the present invention the 1st aspect possesses the 1st semiconductor Laser device, when comprising the 1st light-emitting zone, has one of protuberance and recess side; With, the 2nd semiconductor Laser device when comprising the 2nd light-emitting zone, has the opposing party of protuberance and recess.In addition, one of the protuberance of the 1st semiconductor Laser device and recess side is embedded the protuberance of the 2nd semiconductor Laser device and the opposing party of recess.

In the integrated semiconductor laser device aspect the 1st, as mentioned above, by one of the protuberance of the 1st semiconductor Laser device and recess side is embedded the protuberance of the 2nd semiconductor Laser device and the opposing party of recess, utilize the chimeric of this protuberance and recess, the horizontal direction of the 1st semiconductor Laser device and the 2nd semiconductor Laser device dislocation in the time of can suppressing to fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Thus, can suppress to misplace in the horizontal direction from the optical axis of the ejaculation light of the 1st semiconductor Laser device and optical axis from the ejaculation light of the 2nd semiconductor Laser device, so incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, it is easy with respect to the optical axis adjustment transfiguration of optical system to penetrate light.Thus, can reduce the cost of optical axis adjustment cost.In addition, because the 1st semiconductor Laser device in the time of can suppressing to fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device and the dislocation of the horizontal direction of the 2nd semiconductor Laser device misplace each other so can suppress the direction of riving of the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Thus, can improve behind fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device, the riving property when riving simultaneously.Consequently, can improve the laser characteristics that penetrates from splitting surface (light emergence face).

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, preferably the 1st light-emitting zone and the 2nd light-emitting zone are disposed in fact on the same line of stacked direction of semiconductor layer.Constitute if so, then compare, can dwindle the location interval of the 1st light-emitting zone and the 2nd light-emitting zone with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (vertical direction) with the direction (horizontal direction) of the stacked direction quadrature of semiconductor layer) in the position of the 1st light-emitting zone and the 2nd light-emitting zone.Thus, when the ejaculation light that makes integrated semiconductor laser device incides the optical system use, adjusting optical axis, can suppress to incide the zone in the regulation zone of departing from optical system greatly from the light that the opposing party of the 1st light-emitting zone and the 2nd light-emitting zone penetrates so that the light that penetrates from one of the 1st light-emitting zone and the 2nd light-emitting zone incides under the situation in regulation zone of optical system.Consequently, become easier owing to penetrating the optical axis adjustment of light, so can further reduce the cost of optical axis adjustment cost with respect to optical system.

At this moment, protuberance and recess are set preferably, the 1st light-emitting zone and the 2nd light-emitting zone are disposed in fact on the same line of stacked direction of semiconductor layer.Constitute if so,, the 1st light-emitting zone and the 2nd light-emitting zone can be configured in fact on the same line of stacked direction of semiconductor layer then by easily making protuberance and recess chimeric.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, preferred protuberance and recess form the edge and extend with the direction that light emergence face intersects.Constitute if so, then because the chimeric zone of protuberance and recess on the direction of intersecting with light emergence face, grow, so the 1st semiconductor Laser device can further suppress to fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device time the and the horizontal direction of the 2nd semiconductor Laser device misplace.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, one of preferred the 1st semiconductor Laser device and the 2nd semiconductor Laser device side also comprises the 1st protrusion that constitutes protuberance, and the opposing party of the 1st semiconductor Laser device and the 2nd semiconductor Laser device comprises recess.Constitute if so, then fit by embedding at the 1st protrusion under the state in the 1st semiconductor Laser device and the 2nd semiconductor Laser device the opposing party's the recess with one of the 1st semiconductor Laser device and the 2nd semiconductor Laser device side, can easily utilize the 1st protrusion and recess chimeric when further suppressing bonding process the 1st semiconductor Laser device and the horizontal direction of the 2nd semiconductor Laser device misplace.

At this moment, the opposing party of preferred the 1st semiconductor Laser device and the 2nd semiconductor Laser device also comprises the 2nd protrusion and electric current barrier layer, this electric current barrier layer, the side that covers the 2nd protrusion forms, has the thickness also bigger than the height of the 2nd protrusion, simultaneously, in zone, has peristome corresponding to the 2nd protrusion, the opposing party's of the 1st semiconductor Laser device and the 2nd semiconductor Laser device recess is made of the peristome of electric current barrier layer, in the peristome of the electric current barrier layer that constitutes recess, embed the 1st protrusion that constitutes protuberance.Constitute if so, then by fitting under the state in the peristome of electric current barrier layer that embeds the 1st semiconductor Laser device and the 2nd semiconductor Laser device the opposing party at the 1st protrusion with one of the 1st semiconductor Laser device and the 2nd semiconductor Laser device side, the 1st semiconductor Laser device in the time of can more easily utilizing peristome chimeric of the 1st protrusion and electric current barrier layer further to suppress bonding process and the horizontal direction of the 2nd semiconductor Laser device misplace.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, at least one side of preferred the 1st semiconductor Laser device and the 2nd semiconductor Laser device also comprises the substrate that forms protuberance or recess.Constitute if so, then can easily in the 1st semiconductor Laser device and at least one side of the 2nd semiconductor Laser device, form protuberance or recess.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, the width taper littler that preferred protuberance has the top ends side than the width of root side, recess has the width of bottom side than the open distolateral little taper of width.Constitute if so, then can easily protuberance be embedded in the recess.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, preferred protuberance and recess through adhesive linkage conduct each other bonding.Constitute if so, then can easily conduct sticking protuberance of ground warp and recess each other through adhesive linkage.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, preferred the 1st semiconductor Laser device also comprise be disposed at the 2nd semiconductor Laser device side, to the 1st electrode of the 1st light-emitting zone power supply, the 2nd semiconductor Laser device also comprise be disposed at the 1st semiconductor Laser device side, to the 2nd electrode of the 2nd light-emitting zone power supply, the 1st electrode is electrically connected with the 2nd electrode.Constitute if so, then can easily the 1st electrode and the 2nd electrode be connected on the common electrode.

With regard to above-mentioned the 1st semiconductor Laser device comprise the 1st electrode, simultaneously above-mentioned the 2nd semiconductor Laser device comprises with regard to the formation of the 2nd electrode, preferably in the regulation zone of the 2nd semiconductor Laser device, formation is along the contact hole of the stacked direction extension of semiconductor layer, the 1st electrode and the 2nd electrode are connected with external electric from the 2nd semiconductor Laser device side through contact hole.Constitute if so, even if then the 1st electrode is relative to the 2nd electrode ground stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device, also can be through contact hole from the outside to the 1st electrode and the 2nd electrode application voltage.

With regard to regard to the formation that forms contact hole in above-mentioned the 2nd semiconductor Laser device, preferably, form the taking-up electrode that is electrically connected on the 1st electrode and the 2nd electrode at the medial surface of contact hole.Constitute if so, then can easily utilize take out electrode from the outside to the 1st electrode and the 2nd electrode application voltage.

With regard to the integrated semiconductor laser device of above-mentioned the 1st aspect, the 1st semiconductor Laser device also comprise be disposed at the 2nd semiconductor Laser device side, to the 1st electrode of the 1st light-emitting zone power supply, the 2nd semiconductor Laser device also comprise be disposed at the 1st semiconductor Laser device side, to the 2nd electrode of the 2nd light-emitting zone power supply, between the 1st electrode and the 2nd electrode, dispose dielectric film at least.Constitute if so,, also can utilize dielectric film to come electric insulation the 1st electrode and the 2nd electrode even if then the 1st electrode is relative to the 2nd electrode ground stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Thus, can on the 1st electrode and the 2nd electrode, be connected different electrodes respectively, apply the voltage that has nothing in common with each other.In addition, also can on the 1st electrode and the 2nd electrode, be connected common electrode, apply common voltage.In addition, the 1st electrode and the 2nd electrode are being made as the p lateral electrode, the 1st semiconductor Laser device and the 2nd semiconductor Laser device n lateral electrode separately are configured under the situation of an opposite side with bonding side, on the 1st semiconductor Laser device and the 2nd semiconductor Laser device n lateral electrode separately, be connected different electrodes, apply the voltage that has nothing in common with each other, simultaneously, also can connect common electrode, apply common voltage.In addition, also can on the n lateral electrode of the p of the 1st semiconductor Laser device lateral electrode (the 1st electrode) and the 2nd semiconductor Laser device, be connected common electrode, apply common voltage.And, also can on the p lateral electrode (the 2nd electrode) of the 1st semiconductor Laser device n lateral electrode and the 2nd semiconductor Laser device, be connected common electrode, apply common voltage.Thus, method of supplying power to is improved with respect to the degree of freedom of the 2nd light-emitting zone of the 1st light-emitting zone of the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Consequently, can realize the variation of the using method of integrated semiconductor laser device.

With regard to the formation of configuration dielectric film between the 2nd electrode of the 1st electrode of above-mentioned the 1st semiconductor Laser device and the 2nd semiconductor Laser device, preferably in the regulation zone of dielectric film, form peristome, simultaneously, in the zone corresponding to the peristome of dielectric film of the 2nd semiconductor Laser device, formation is along the 1st contact hole of the stacked direction extension of semiconductor layer, and the 1st electrode is connected with external electric from the 2nd semiconductor Laser device side through the peristome of the 1st contact hole and dielectric film.Constitute if so, even if then between the 1st electrode and the 2nd electrode, dispose dielectric film, also can be through the peristome of the 1st contact hole and dielectric film, from the outside to the 1st electrode application voltage.

With regard to regard to the formation that forms the 1st contact hole in above-mentioned the 2nd semiconductor Laser device, preferably on the medial surface of the 1st contact hole, form and be electrically connected on the taking-up of the 1st on the 1st electrode electrode.Constitute if so, then can easily utilize the 1st to take out electrode, from the outside to the 1st electrode application voltage.

With regard to regard to the formation that forms the 1st contact hole in above-mentioned the 2nd semiconductor Laser device, preferably the 2nd semiconductor Laser device with the 1st contact hole at interval in the zone of predetermined distance, formation is along the 2nd contact hole of the stacked direction extension of semiconductor layer, the 2nd electrode is connected with external electric from the 2nd semiconductor Laser device side through the 2nd contact hole.Constitute if so, then because through the 2nd contact hole to the 2nd electrode application voltage, so by come can easily to apply the voltage that has nothing in common with each other each other through the 1st contact hole to the 1st electrode and the 2nd electrode to the 1st electrode application voltage.

With regard to regard to the formation that forms the 2nd contact hole in above-mentioned the 2nd semiconductor Laser device, preferably on the medial surface of the 2nd contact hole, form and be electrically connected on the taking-up of the 2nd on the 2nd electrode electrode.Constitute if so, then can easily utilize the 2nd to take out electrode, from the outside to the 2nd electrode application voltage.

With regard to the formation of configuration dielectric film between the 2nd electrode of the 1st electrode of above-mentioned the 1st semiconductor Laser device and the 2nd semiconductor Laser device, preferably also possesses the 3rd semiconductor Laser device, it comprises the 3rd light-emitting zone and the 3rd electrode, the 3rd electrode is configured in the 1st semiconductor Laser device side, power to the 3rd light-emitting zone, between the 1st electrode and the 2nd electrode, also between the 1st electrode and the 3rd electrode, dispose dielectric film.Constitute if so, then with regard to the integrated semiconductor laser device that also possesses the 3rd semiconductor Laser device, even if the 1st electrode is relative to the 2nd electrode and the 3rd electrode ground stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device and the 3rd semiconductor Laser device, also can utilize dielectric film insulate the 1st electrode and the 2nd electrode, and the 1st electrode and the 3rd electrode also can insulate.

At this moment, preferred the 2nd semiconductor Laser device and the 3rd semiconductor Laser device are formed on the common substrate.Constitute if so, then except the horizontal direction dislocation that suppresses the 1st semiconductor Laser device and the 2nd semiconductor Laser device, also can suppress the horizontal direction dislocation of the 1st semiconductor Laser device and the 3rd semiconductor Laser device, and stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device and the 3rd semiconductor Laser device.

With regard to the formation that also possesses above-mentioned the 3rd semiconductor Laser device, preferably in the 3rd semiconductor Laser device, formation is along the 3rd contact hole of the stacked direction extension of semiconductor layer, and the 3rd electrode is connected with external electric from the 3rd semiconductor Laser device side through the 3rd contact hole.Constitute if so, then because can be through the 3rd contact hole to the 3rd electrode application voltage, so can through the 1st contact hole in the 1st electrode application voltage, through the 2nd contact hole to the 2nd electrode application voltage, thus, can easily apply the voltage that has nothing in common with each other each other to the 1st electrode, the 2nd electrode and the 3rd electrode.

With regard to regard to the formation that forms the 3rd contact hole in above-mentioned the 3rd semiconductor Laser device, preferably on the medial surface of the 3rd contact hole, form and be electrically connected on the taking-up of the 3rd on the 3rd electrode electrode.Constitute if so, then can easily utilize the 3rd take out electrode from the outside to the 3rd electrode application voltage.

The manufacture method of the integrated semiconductor laser device of the present invention the 2nd aspect possesses following operation: protuberance embedded the state in the recess, to make the operation that the 1st semiconductor Laser device with one of protuberance and recess side and the 2nd semiconductor Laser device of the opposing party with protuberance and recess are fitted; With, under state with the 1st semiconductor Laser device and the applying of the 2nd semiconductor Laser device, the operation of rive simultaneously the 1st semiconductor Laser device and the 2nd semiconductor Laser device.

In the manufacture method of the integrated semiconductor laser device aspect the 2nd, as mentioned above, at the state that protuberance is embedded in the recess, make after the 1st semiconductor Laser device with one of protuberance and recess side and the opposing party's the 2nd semiconductor Laser device applying with protuberance and recess, under state with the 1st semiconductor Laser device and the applying of the 2nd semiconductor Laser device, rive simultaneously the 1st semiconductor Laser device and the 2nd semiconductor Laser device, can utilize protuberance and recess thus chimeric when suppressing to fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device the 1st semiconductor Laser device and the horizontal direction dislocation of the 2nd semiconductor Laser device.Thereby, can suppress to misplace in the horizontal direction from the optical axis of the ejaculation light of the 1st semiconductor Laser device and optical axis from the ejaculation light of the 2nd semiconductor Laser device, so incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, it is easy with respect to the optical axis adjustment transfiguration of optical system to penetrate light.Thus, can reduce the cost of optical axis adjustment cost.In addition, because the 1st semiconductor Laser device in the time of can suppressing to fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device and the dislocation of the horizontal direction of the 2nd semiconductor Laser device misplace each other so can suppress the direction of riving of the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Thus, can improve behind fit the 1st semiconductor Laser device and the 2nd semiconductor Laser device, the riving property when riving simultaneously.Consequently, can form the integrated semiconductor laser device that can improve easily from the laser characteristics of splitting surface (light emergence face) ejaculation.

With regard to the manufacture method of the integrated semiconductor laser device of above-mentioned the 2nd aspect, preferred the 1st semiconductor Laser device comprises the 1st light-emitting zone, the 2nd semiconductor Laser device comprises the 2nd light-emitting zone, and the operation that the 1st semiconductor Laser device and the 2nd semiconductor Laser device are fitted comprises following operation: with the 1st semiconductor Laser device with the applying of the 2nd semiconductor Laser device so that the 1st light-emitting zone and the 2nd light-emitting zone are disposed at the operation on the same line of stacked direction of semiconductor layer in fact.Constitute if so, then compare, can dwindle the location interval of the 1st light-emitting zone and the 2nd light-emitting zone with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer with the direction of the stacked direction quadrature of semiconductor layer) in the position of the 1st light-emitting zone and the 2nd light-emitting zone.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, adjusting optical axis so that the light that penetrates from one of the 1st light-emitting zone and the 2nd light-emitting zone incides under the situation in regulation zone of optical system, can suppress to incide situation the zone in the regulation zone of departing from optical system greatly from the light that the opposing party of the 1st light-emitting zone and the 2nd light-emitting zone penetrates.Consequently, become easier owing to penetrating the optical axis adjustment of light, so can further reduce the cost of optical axis adjustment cost with respect to optical system.

When comprising the 1st light-emitting zone with regard to above-mentioned the 1st semiconductor Laser device, the 2nd semiconductor Laser device comprises the formation of the 2nd light-emitting zone, the 1st semiconductor Laser device also comprises and is disposed at the 2nd semiconductor Laser device side, the 1st electrode to the power supply of the 1st light-emitting zone, the 2nd semiconductor Laser device also comprises and is disposed at the 1st semiconductor Laser device side, to the 2nd electrode of the 2nd light-emitting zone power supply, the operation of the 1st semiconductor Laser device and the applying of the 2nd semiconductor Laser device also can be comprised following operation: the 1st electrode and the 2nd electrode conduct the bonding operation of ground warp adhesive linkage each other.Constitute if so, then, can power to the 1st light-emitting zone of the 1st semiconductor Laser device and the 2nd light-emitting zone both sides of the 2nd semiconductor Laser device by applying voltage to one of the 1st electrode and the 2nd electrode.

When comprising the 1st light-emitting zone with regard to above-mentioned the 1st semiconductor Laser device, the 2nd semiconductor Laser device comprises the formation of the 2nd light-emitting zone, the 1st semiconductor Laser device also comprises and is disposed at the 2nd semiconductor Laser device side, the 1st electrode to the power supply of the 1st light-emitting zone, the 2nd semiconductor Laser device also comprises and is disposed at the 1st semiconductor Laser device side, the 2nd electrode to the power supply of the 2nd light-emitting zone, the operation of the 1st semiconductor Laser device and the applying of the 2nd semiconductor Laser device also can be comprised following operation: between the 1st electrode and the 2nd electrode, dispose dielectric film at least, simultaneously, through the fit operation of the 1st semiconductor Laser device and the 2nd semiconductor Laser device of dielectric film.Constitute if so,, also can utilize dielectric film to come electric insulation the 1st electrode and the 2nd electrode even if then the 1st electrode is relative to the 2nd electrode ground stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Thus, can on the 1st electrode and the 2nd electrode, apply the voltage that has nothing in common with each other respectively, so method of supplying power to is improved with respect to the degree of freedom of the 2nd light-emitting zone of the 1st light-emitting zone of the 1st semiconductor Laser device and the 2nd semiconductor Laser device.Consequently, can realize the variation of the using method of integrated semiconductor laser device.

Comprise through dielectric film with regard to the operation of fit above-mentioned the 1st semiconductor Laser device and the 2nd semiconductor Laser device and to fit with regard to the situation of operation of the 1st semiconductor Laser device and the 2nd semiconductor Laser device, preferred also possess be formed at the common substrate of the 2nd semiconductor Laser device on the 3rd semiconductor Laser device, it comprises the 3rd light-emitting zone and the 3rd electrode, the 3rd electrode is disposed at the 1st semiconductor Laser device side, power to the 3rd light-emitting zone, and, the operation that the 1st semiconductor Laser device and the 2nd semiconductor Laser device are fitted comprises following operation: except between the 1st electrode and the 2nd electrode, also between the 3rd electrode and the 1st electrode, dispose dielectric film, simultaneously, through dielectric film the 1st semiconductor Laser device and the 2nd semiconductor Laser device are fitted, and, through dielectric film the 1st semiconductor Laser device and the 3rd semiconductor Laser device are fitted.Constitute if so, then with regard to the integrated semiconductor laser device that also possesses the 3rd semiconductor Laser device, even if the 1st electrode is relative to the 2nd electrode and the 3rd electrode ground stacked (integrated) the 1st semiconductor Laser device and the 2nd semiconductor Laser device and the 3rd semiconductor Laser device, also can utilize dielectric film insulate the 1st electrode of the 1st semiconductor Laser device and the 2nd electrode of the 2nd semiconductor Laser device, and the 1st electrode of the 1st semiconductor Laser device and the 3rd electrode of the 3rd semiconductor Laser device also can insulate.

Description of drawings

Fig. 1 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 1st execution mode.

Fig. 2 is the profile along the 100-100 line of Fig. 1.

Fig. 3～Fig. 9 is the profile of the integrated semiconductor laser device manufacture process of explanation the 1st execution mode illustrated in figures 1 and 2.

Figure 10 is the plane graph of the integrated semiconductor laser device manufacture process of explanation the 1st execution mode illustrated in figures 1 and 2.

Figure 11 is the profile in zone 200 of the dotted line of Figure 10.

Figure 12 is the plane graph of the integrated semiconductor laser device manufacture process of explanation the 1st execution mode illustrated in figures 1 and 2.

Figure 13 is the profile in zone 300 of the dotted line of Figure 12.

Figure 14～Figure 28 is the profile of the integrated semiconductor laser device manufacture process of explanation the 1st execution mode illustrated in figures 1 and 2.

Figure 29 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 2nd execution mode.

Figure 30 is the profile along the 400-400 line of Figure 29.

Figure 31 is the plane graph of the integrated semiconductor laser device manufacture process of explanation Figure 29 and the 2nd execution mode shown in Figure 30.

Figure 32 is the profile in zone 500 of the dotted line of Figure 31.

Figure 33～Figure 50 is the profile of the integrated semiconductor laser device manufacture process of explanation Figure 29 and the 2nd execution mode shown in Figure 30.

Figure 51 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 3rd execution mode.

Figure 52 is the profile along the 600-600 line of Figure 51.

Figure 53～Figure 63 is the profile of the integrated semiconductor laser device manufacture process of the 3rd execution mode shown in explanation Figure 51 and Figure 52.

Figure 64 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 4th execution mode.

Figure 65 is the profile along the 700-700 line of Figure 64.

Figure 66 and Figure 67 are the profiles of the integrated semiconductor laser device manufacture process of the 4th execution mode shown in explanation Figure 64 and Figure 65.

Figure 68 is the plane graph of the integrated semiconductor laser device manufacture process of the 4th execution mode shown in explanation Figure 64 and Figure 65.

Figure 69 is the profile in zone 800 of the dotted line of Figure 68.

Figure 70 and Figure 71 are the profiles of the integrated semiconductor laser device manufacture process of the 4th execution mode shown in explanation Figure 64 and Figure 65.

Figure 72 is the profile of structure of the integrated semiconductor laser device of expression the present invention the 5th execution mode.

Figure 73 is the plane graph of infrared laser device substrate of seeing the integrated semiconductor laser device of the 5th execution mode shown in Figure 72 from the p side.

Figure 74～Figure 89 is the profile of the integrated semiconductor laser device manufacture process of the 5th execution mode shown in explanation Figure 72.

Figure 90 is the profile of structure of the integrated semiconductor laser device of expression the present invention the 6th execution mode.

Figure 91 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 7th execution mode.

Figure 92 is the profile along the 900-900 line of Figure 91.

Figure 93～Figure 105 is the profile of the integrated semiconductor laser device manufacture process of the 7th execution mode shown in explanation Figure 91 and Figure 92.

Figure 106 is the plane graph of structure of the integrated semiconductor laser device of expression the present invention the 8th execution mode.

Figure 107 is the profile along the 1000-1000 line of Figure 106.

Figure 108～Figure 132 is the profile of the integrated semiconductor laser device manufacture process of the 8th execution mode shown in explanation Figure 106 and Figure 107.

Figure 133 is the oblique view of the structure of the existing integrated semiconductor laser device of expression.

Embodiment

Below, with reference to accompanying drawing embodiments of the present invention are described.

(the 1st execution mode)

At first, the see figures.1.and.2 structure of integrated semiconductor laser device that the 1st execution mode is described.

The integrated semiconductor laser device of the 1st execution mode as shown in Figure 2, have along Z direction stacked (integrated) have contraposition with the bluish violet color laser element 110 of protuberance with have the structure of contraposition with the red laser element 120 of recess.In addition, bluish violet color laser element 110 and red laser element 120 are respectively examples of ' the 1st semiconductor Laser device ' of the present invention and ' the 2nd semiconductor Laser device '.

The structure of the bluish violet color laser element 110 of the 1st execution mode at first, is described.In the bluish violet color laser element 110 of the 1st execution mode, as shown in Figure 2, on n type GaN substrate 1, form the n type covering 2 that constitutes by n type AlGaN with about 2.5 μ m.On n type covering 2, form the active layer 3 of thickness with about 70nm.This active layer 3 has the multiple quantum well (Multiple Quantum Well: MQW) structure of interaction cascading by unadulterated InGaN a plurality of trap layers (not shown) that constitute and a plurality of barrier layers (not shown) that are made of unadulterated InGaN.On active layer 3, form the light guide layer 4 that constitutes by unadulterated InGaN with about 80nm.On light guide layer 4, form the cap rock 5 that constitutes by unadulterated AlGaN with about 20nm.

On cap rock 5, form the p type covering 6 that constitutes by p type AlGaN with protuberance and protuberance par in addition.The flat thicknesses of this p type covering 6 is about 50nm, and the height of protuberance above the par is about 350nm.On the protuberance of p type covering 6, form the p type contact layer 7 that constitutes by p type InGaN with about 3nm thickness.Protuberance by this p type contact layer 7 and p type covering 6 constitutes protrusion 8.

Here, in the 1st execution mode, the tapered side that the width that protrusion 8 has the top ends side is littler than the width of root side.In addition, the top angulation θ 1 of the side of protrusion 8 and active layer 3 is about 70 °.In addition, the width of the head portion of protrusion 8 is about 1.5 μ m.In addition, protrusion 8 forms as shown in Figure 1 along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 12 quadratures.In addition, protrusion 8 constitutes the protuberance that contraposition is used.In addition, as shown in Figure 2, the active layer 3 of protrusion 8 belows and the peripheral part of active layer 3 constitute the light-emitting zone 13 of bluish violet color laser element 110.In addition, protrusion 8 is examples of ' protuberance ' of the present invention and ' the 1st protrusion '.In addition, light-emitting zone 13 is examples of ' the 1st light-emitting zone ' of the present invention.

In addition, form have about 200nm thickness by SiO ₂The electric current barrier layer 9 that film constitutes is above the par of the side that covers protrusion 8 and p type covering 6.On electric current barrier layer 9, with the top p lateral electrode 10 that forms contiguously of protrusion 8 (p type contact layer 7).This p lateral electrode 10 is by having the Pd layer (not shown) of about 100nm thickness from n type GaN substrate 1 side, order and having Au layer (not shown) formation of about 1 μ m thickness.In addition, p lateral electrode 10 is examples of ' the 1st electrode ' of the present invention.Thus, from the contraposition that constitutes by protrusion 8 with the projecting height of protuberance (the p lateral electrode 10 on being positioned at above the par of p type covering 6 above to be positioned at protrusion 8 above on p lateral electrode 10 above height) H1 is about 153nm.

In addition, as shown in Figure 2, on the back side of n type GaN substrate 1, form n lateral electrode 11.This n lateral electrode 11 by the Al layer (not shown) that has about 6nm thickness from n type GaN substrate 1 side, order, have the Pd layer (not shown) of about 10nm thickness and have Au layer (not shown) formation of about 300nm thickness.

Below, the structure of the red laser element 120 of the 1st execution mode is described.In addition, protrusion 29 sides in the red laser element 120 of Fig. 2 are towards the below.In the red laser element 120 of the 1st execution mode, as shown in Figure 2, on the surface of bluish violet color laser element 110 sides of n type GaAs substrate 21, form the n type resilient coating 22 that constitutes by n type GaInP with about 300nm thickness.On the surface of bluish violet color laser element 110 sides of n type resilient coating 22, form the n type covering 23 that constitutes by n type AlGaInP with about 2 μ m thickness.On the surface of bluish violet color laser element 110 sides of n type covering 23, form active layer 24 with about 60nm thickness.This active layer 24 has the MQW structure of interaction cascading by unadulterated GaInP a plurality of trap layers (not shown) that constitute and a plurality of barrier layers (not shown) that are made of unadulterated AlGaInP.

On the surface of bluish violet color laser element 110 sides of active layer 24, form p type the 1st covering 25 that constitutes by p type AlGaInP with about 300nm thickness.In the regulation zone on the surface of bluish violet color laser element 110 sides of p type the 1st covering 25, form convex p type the 2nd covering 26 that constitutes by p type AlGaInP with about 1.2 μ m thickness.On the surface of bluish violet color laser element 110 sides of p type the 2nd covering 26, form the p type intermediate layer 27 that constitutes by p type GaInP with about 100nm thickness.On the surface of bluish violet color laser element 110 sides in p type intermediate layer 27, form the p type contact layer 28 that constitutes by p type GaAs with about 300nm thickness.Constitute protrusion 29 with tapered side that width diminishes to the head portion side from root by this p type contact layer 28, p type intermediate layer 27 and p type the 2nd covering 26.The surperficial angulation θ 2 of the side of this protrusion 29 and active layer 24 is about 60 °.In addition, the width of the head portion of protrusion 29 is about 2.7 μ m.In addition, protrusion 29 forms as shown in Figure 1 along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 12 quadratures.In addition, as shown in Figure 2, constitute the light-emitting zone 34 of red laser element 120 corresponding to the peripheral part of the active layer 24 of the formation position of protrusion 29 and active layer 24.In addition, protrusion 29 is examples of ' the 2nd protrusion ' of the present invention.In addition, light-emitting zone 34 is examples of ' the 2nd light-emitting zone ' of the present invention.

Here, in the 1st execution mode, on the surface of bluish violet color laser element 110 sides of p type the 1st covering 25, cover the n type electric current barrier layer 30 of the big thickness (being about 2 μ m) of height (being about 1.6 μ m) that forming laterally of protrusion 29 have than protrusion 29.This n type electric current barrier layer 30 has the peristome 30a that expose on the surface of bluish violet color laser element 110 sides of protrusion 29.In addition, the peristome 30a of n type electric current barrier layer 30 has the width (width of the top ends branch of protrusion 29 (being about 2.7 μ m)) of bottom side than the open distolateral little tapered inner side surfaces of width (being about 3 μ m).In addition, the surperficial angulation θ 3 of side and active layer 24 is about 70 ° within the peristome 30a of n type electric current barrier layer 30.In addition, the peristome 30a of n type electric current barrier layer 30 forms the band shape (elongate) of extending along the Y direction as shown in Figure 1 along protrusion 29.In addition, n type electric current barrier layer 30 is by being that n type AlInP layer (not shown) and n type GaAs layer (not shown) constitute from n type GaAs substrate 21 sides, order.In addition, the peristome 30a of n type electric current barrier layer 30 constitutes the recess that contraposition is used.In addition, n type electric current barrier layer 30 is examples of ' electric current barrier layer ' of the present invention, and peristome 30a is an example of ' recess ' of the present invention.

In addition, as shown in Figure 2, form and to have the p lateral electrode 31 of about 0.3 μ m thickness, in the surface of bluish violet color laser element 110 sides that cover n type electric current barrier layer 30, contact with the surface of bluish violet color laser element 110 sides of protrusion 29 (p type contact layer 28).This p lateral electrode 31 is by being that AuZn layer (not shown), Pt layer (not shown), Au layer (not shown) constitute from n type GaAs substrate 21 sides, order.In addition, p lateral electrode 31 is examples of ' the 2nd electrode ' of the present invention.Thus, the contraposition that is made of the peristome 30a of n type electric current barrier layer 30 is about 400nm with concave depth (from being positioned at corresponding to the surface of bluish violet color laser element 110 sides of the p lateral electrode 31 in the zone beyond the zone of protrusion 29 to the degree of depth that is positioned at corresponding to the surface of bluish violet color laser element 110 sides of the p lateral electrode 31 in the zone of protrusion 29) D1.That is, the contraposition that is made of the peristome 30a of n type electric current barrier layer 30 with concave depth D1 (being about 400nm) than the contraposition that is made of protrusion 8 with the projecting height H1 (being about 153nm) of protuberance greatly.In addition, n type GaAs substrate 21 with surfaces bluish violet color laser element 110 opposition sides on, form and to have the n lateral electrode 32 that is about 1 μ m thickness.This n lateral electrode 32 is by being AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 21 sides, order.

In addition, form from n lateral electrode 32 and surfaces bluish violet color laser element 110 opposition sides, run through the circular contact hole 120a of n lateral electrode 32, n type GaAs substrate 21, each layer of semiconductor (22～25 and 30) and p lateral electrode 31.This contact hole 120a is tens of μ m at the diameter of n lateral electrode 32 sides, and the aperture with p lateral electrode 31 sides is than the little tapered inner side surfaces in aperture of n lateral electrode 32 sides.On the medial surface of contact hole 120a and be positioned on n lateral electrode 32 and surfaces bluish violet color laser element 110 opposition sides of contact hole 120a near zone, form have be about 200nm thickness by SiO ₂The dielectric film 38 that film constitutes.In the regulation zone on dielectric film 38, form with soldering-tin layer 115 described later through contact hole 120a with being electrically connected and to have the taking-up electrode 39 that is about 0.3 μ m thickness.This taking-up electrode 39 is by being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 21 sides, order.In addition, in n lateral electrode 32 with take out on electrode 39 and surfaces bluish violet color laser element 110 opposition sides bond line (gold thread) 122.

Here, in the 1st execution mode, as shown in Figure 2, bluish violet color laser element 110 and red laser element 120 with the contraposition that will constitute by protrusion 8 with protuberance embed contraposition that the peristome 30a by n type electric current barrier layer 30 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 34 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 120 is configured on the same line along the stacked direction (the Z direction of Fig. 2) of semiconductor layer.In addition, as mentioned above, because the contraposition of red laser element 120 is bigger with the projecting height H1 (being about 153nm) of protuberance than the contraposition of bluish violet color laser element 110 with concave depth D1 (being about 400nm), thus the contraposition of bluish violet color laser element 110 with the contraposition of the top and red laser element 120 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 110 with the contraposition of the zone beyond the protuberance and red laser element 120 with recess zone in addition between every greatly.In addition, the contraposition of bluish violet color laser element 110 engages via the soldering-tin layer 115 that Au-Sn constitutes with recess with the contraposition of red laser element 120 with protuberance.In addition, soldering-tin layer 115 is examples of ' knitting layer ' of the present invention.In addition, the p lateral electrode 31 of the p lateral electrode 10 of bluish violet color laser element 110 and red laser element 120 is electrically connected on through soldering-tin layer 115 and takes out electrode 39.

In the 1st execution mode, as mentioned above, use in the recess with the contraposition of the peristome 30a formation of the n type electric current barrier layer 30 of protuberance embedding red laser element 120 by the contraposition that the protrusion 8 with bluish violet color laser element 110 constitutes, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 110 in the time of can suppressing to fit bluish violet color laser element 110 and red laser element 120 and red laser element 120 be the dislocation on (directions X of Fig. 2) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 110 and situation from optical axis along continuous straight runs (directions X of Fig. 2) dislocation of the ejaculation light of red laser element 120, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 110 when bluish violet color laser element 110 is with red laser element 120 because can suppress to fit and red laser element 120 be the dislocation on (directions X of Fig. 2) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 110 and red laser element 120 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 110 being rived simultaneously afterwards with red laser element 120.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 12 ejaculations.

In addition, in the 1st execution mode, be configured in by light-emitting zone 34 on the same line of stacked direction (the Z direction of Fig. 2) of semiconductor layer the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 120, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Fig. 2) and horizontal direction (directions X of Fig. 2)) in the position of the light-emitting zone 34 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 120, can reduce the light-emitting zone 13 of bluish violet color laser element 110 and the location interval of the light-emitting zone 34 of red laser element 120.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulating optical axis so that the light that penetrates from one of light-emitting zone 34 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 120 incides under the situation the regulation zone of optical system, can suppress to incide situation the zone in the regulation zone of departing from optical system greatly from the light that light-emitting zone 34 the opposing party of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 120 penetrate.Consequently, because become easier, so can further reduce the cost of optical axis adjustment cost with respect to the optical axis adjustment of optical system.

In addition, in the 1st execution mode, when extending ground the contraposition of bluish violet color laser element 110 formed band shape (elongate) with protuberance (protrusion 8) with the direction (the Y direction of Fig. 1) of light emergence face 12 quadratures, along extending ground the contraposition of red laser element 120 is formed band shape (elongate) with recess (the peristome 30a of n type electric current barrier layer 30) with the direction (the Y direction of Fig. 1) of light emergence face 12 quadratures, thus, the chimeric zone of contraposition usefulness protuberance and recess is gone up elongated in the direction (the Y direction of Fig. 1) with light emergence face 12 quadratures.Thus, bluish violet color laser element 110 and red laser element 120 in the horizontal direction the dislocation (directions X of Fig. 1) on of bluish violet color laser element 110 during that can further suppress to fit with red laser element 120.

In addition, in the 1st execution mode, form the contraposition protuberance (protrusion 8) of bluish violet color laser element 110, with the width taper littler than the width of root side with top ends side, simultaneously, form the recess (the peristome 30a of n type electric current barrier layer 30) of red laser element 120, to have the open distolateral little taper of width of width ratio of bottom side, thus, can easily contraposition be embedded in the recess with protuberance.

In addition, in the 1st execution mode, contraposition by engaging bluish violet color laser element 110 through soldering-tin layer 115 is with the contraposition recess of protuberance with red laser element 120, can easily utilize soldering-tin layer 115 each other with conducting the contraposition of joint bluish violet color laser element 110 with the contraposition recess of protuberance and red laser element 120.

In addition, in the 1st execution mode, contraposition by making bluish violet color laser element 110 with the contraposition of face (corresponding to the part of protrusion 8) on the protuberance and red laser element 120 with the interval of the bottom surface (corresponding to the part of protrusion 29) of recess than the contraposition of bluish violet color laser element 110 with the contraposition of zone beyond the protuberance and red laser element 120 with between the recess zone in addition every greatly, even if the contraposition of bluish violet color laser element 110 contacts with the zone beyond the recess with the contraposition of red laser element 120 with the zone beyond the protuberance, top (corresponding to the part of protrusion 8) that also can suppress protuberance contacts with the bottom surface (corresponding to the part of protrusion 29) of recess.Thus, when the contraposition that engages bluish violet color laser element 110 is used recess with protuberance with the contraposition of red laser element 120, can suppress to protrusion 8 and 29 stress applications with cause damage.

In addition, in the 1st execution mode, n type electric current barrier layer 30 by will comprising n type GaAs layer is as the electric current barrier layer of red laser element 120, because n type GaAs layer has good exothermic character, so the exothermic character of integrated semiconductor laser device is improved.

In addition, in the 1st execution mode, be electrically connected the p lateral electrode 10 of bluish violet color laser element 110 and the p lateral electrode 31 of red laser element 120 through soldering-tin layer 115, thereby can easily the p lateral electrode 10 of bluish violet color laser element 110 and the p lateral electrode 31 of red laser element 120 be connected in common anode.

In addition, in the 1st execution mode, in red laser element 120, form in the contact hole 120a, through contact hole 120a the p lateral electrode 10 of bluish violet color laser element 110 and the p lateral electrode 31 of red laser element 120 are connected with outside, thus, even if the p lateral electrode 10 of bluish violet color laser element 110 is relative to ground stacked (integrated) bluish violet color laser element 110 and red laser element 120 with the p lateral electrode 31 of red laser element 120, also can apply voltage from the outside to the p lateral electrode 31 of the p of bluish violet color laser element 110 lateral electrode 10 and red laser element 120 through contact hole 120a.

In addition, in the 1st execution mode, on the medial surface of contact hole 120a, formation is electrically connected on the taking-up electrode 39 on the p lateral electrode 31 of the p lateral electrode 10 of bluish violet color laser element 110 and red laser element 120, takes out electrode 39 and applies voltage from the outside to the p lateral electrode 31 of the p of bluish violet color laser element 110 lateral electrode 10 and red laser element 120 thereby can easily utilize.

In addition, in the 1st execution mode, when the protrusion 8 by bluish violet color laser element 110 constitutes protuberance, form recess near the protrusion 29 of red laser element 120 the zone, thereby the recess of protuberance by making bluish violet color laser element 110 and red laser element 120 is chimeric, can further reduce the interval of light-emitting zone 13 with the light-emitting zone 34 of red laser element 120 of bluish violet color laser element 110.

Below, the manufacture process of the integrated semiconductor laser device of the 1st execution mode is described with reference to Fig. 1～Figure 28.

In the 1st execution mode, utilize Fig. 3～process shown in Figure 13, form bluish violet color laser element 110, simultaneously, utilize Figure 14～process shown in Figure 26, form red laser element 120.When forming bluish violet color laser element 110, at first as shown in Figure 3, on n type GaN substrate 1, make each layer growth of semiconductor that constitutes bluish violet color laser element 110.Particularly, use metal organic chemical vapor deposition (Metalorganic chemical vapor deposition, MOCVD) method, have on the n type GaN substrate 1 of about 400 μ m thickness, make after the n type covering that constitutes by n type AlGaN 2 growths with about 2.5 μ m thickness, on n type covering 2, make active layer 3 growths with about 70nm thickness.In addition, when making active layer 3 growths, make a plurality of trap layers (not shown) that constitute by unadulterated InGaN and a plurality of barrier layers (not shown) intergrowth that constitutes by unadulterated InGaN.Thus, on n type covering 2, form the active layer 3 of MQW structure with a plurality of trap layers of interaction cascading and a plurality of barrier layers.

Then, on active layer 3, the cap rock 5 that is made of unadulterated AlGaN that makes the light guide layer that is made of unadulterated InGaN 4 with about 80nm thickness and have about 20nm thickness is grown successively.Afterwards, on cap rock 5, the p type contact layer 7 that is made of p type InGaN that makes the p type covering that is made of unadulterated p type AlGaN 6 with about 400nm thickness and have about 3nm thickness is grown successively.

Afterwards, as shown in Figure 4, use plasma CVD method, formation has the SiO that is about 240nm thickness on p type contact layer 7 ₂Film 14.Afterwards, at SiO ₂In the zone on the film 14, form resist 15 with the band shape (elongate) that is about 1.5 μ m width corresponding to protrusion 8 (with reference to Fig. 2).

Afterwards, as shown in Figure 5, use based on CF ₄Be gas reactive ion etching (reactive ion etching, RIE) method, with resist 15 as mask, etching SiO ₂Film 14.Afterwards, remove resist 15.

Afterwards, as shown in Figure 6, using based on chlorine is the RIE method of gas, with SiO ₂Film 14 etches into p type covering 6 degree of depth (degree of depth that is about 350nm above p type covering 6) midway as mask above p type contact layer 7.Thus, form the protrusion 8 that protuberance and p type contact layer 7 by p type covering 6 constitute.At this moment, protrusion 8 forms width with the top ends side side than wide of root side little taper.In addition, the top angulation θ 1 of the side of protrusion 8 and active layer 3 (p type covering 6) is about 70 °, and the width of the head portion of protrusion 8 is about 1.5 μ m.In addition, protrusion 8 forms as shown in Figure 1 along the band shape (elongate) of extending with the direction of light emergence face 12 quadratures.In addition, this protrusion 8 constitutes the protuberance that contraposition is used.Afterwards, remove SiO ₂Film 14.

Afterwards, as shown in Figure 7, use plasma CVD method, covers whole ground formation have be about 200nm thickness by SiO ₂The electric current barrier layer 9 that film constitutes.Afterwards, cover whole ground and form resist 16.

Afterwards, as shown in Figure 8, use the plasma etching technology of oxygen, ((eat-back: etch back) come filming resist 16, the surface that is positioned at the electric current barrier layer 9 on protrusion 8 top is exposed by etching in whole zone.Afterwards, use CF ₄Be the RIE method of gas, as mask, etching is positioned at the electric current barrier layer 9 on protrusion 8 top with resist 16.Thus, as shown in Figure 9, expose above the protrusion 8.Afterwards, remove resist 16.

Afterwards, as shown in figure 11, use the electron beam evaporation plating method, on electric current barrier layer 9, with the top p lateral electrode 10 that forms contiguously of protrusion 8 (p type contact layer 7).At this moment, form the Au layer (not shown) that has the Pd layer (not shown) of about 100nm thickness and have about 1 μ m thickness successively.Thus, the contraposition that constitutes by protrusion 8 with the projecting height of protuberance (the p lateral electrode 10 on above the par that is positioned at p type covering 6 above on above being positioned at protrusion 8 p lateral electrode 10 above height) H1 is about 153nm.In addition, as shown in figure 10, the end that will be arranged in the p lateral electrode 10 of the end face 1a side parallel with the light emergence face 12 (with reference to Fig. 1) of n type GaN substrate 1 is configured in the zone of predetermined distance at interval with the end face 1a of n type GaN substrate 1.

Afterwards, as shown in figure 13, grind the back side of n type GaN substrate 1, be about 150 μ m up to thickness above protrusion 8 to the back side of n type GaN substrate 1.Afterwards, use the electron beam evaporation plating method, on the back side of n type GaN substrate 1, form n lateral electrode 11.At this moment, form successively and have the Al layer (not shown) that is about 6nm thickness, have the Pd layer (not shown) that is about 10nm thickness and have the Au layer (not shown) that is about 300nm thickness.In addition, as shown in figure 12, the end that will be arranged in the n lateral electrode 11 of the end face 1a side parallel with the light emergence face 12 (with reference to Fig. 1) of n type GaN substrate 1 is configured in the zone of predetermined distance at interval with the end face 1a of n type GaN substrate 1.Thus, as Figure 10 and shown in Figure 12, when the zone that does not form p lateral electrode 10 and n lateral electrode 11 is formed in applying bluish violet color laser element 110 and red laser element 120, can be by the visual transparent region 111 of discerning the protrusion 8 of bluish violet color laser element 110 above or below the element.So just form the bluish violet color laser element 110 of the 1st execution mode.

Below, when forming red laser element 120, at first as shown in figure 14, on n type GaAs substrate 21, make each layer growth of semiconductor that constitutes red laser element 120.Particularly, use mocvd method, on n type GaAs substrate 21, make to have after n type resilient coating 22 growths that constitute by n type GaInP that are about 300nm, on n type resilient coating 22, make to have the n type covering that constitutes by n type AlGaInP 23 growths that are about 2 μ m thickness.Afterwards, on n type covering 23, make to have active layer 24 growths that are about 60nm thickness.In addition, when making active layer 24 growths, make a plurality of trap layers (not shown) that constitute by unadulterated GaInP and a plurality of barrier layers (not shown) intergrowth that constitutes by unadulterated AlGaInP.Thus, on n type covering 23, form the active layer 24 of MQW structure with a plurality of trap layers of interaction cascading and a plurality of barrier layers.

Afterwards, on active layer 24, make the p type that constitutes by p type AlGaInP the 1st covering 25 successively and have p type the 2nd covering 26 growths that constitute by p type AlGaInP that are about 1.2 μ m thickness with about 300nm thickness.Then, on p type the 2nd covering 26, make after the p type intermediate layer that constitutes by p type GaInP 27 growths with about 100nm thickness, on p type intermediate layer 27, make to have p type contact layer 28 growths that constitute by p type GaAs that are about 300nm thickness.

Afterwards, as shown in figure 15, use sputtering method, vacuum vapour deposition or electron beam evaporation plating method, on p type contact layer 28, formation has the SiO that is about 240nm thickness ₂Film 35.Afterwards, at SiO ₂In the zone corresponding to protrusion 29 (with reference to Fig. 2) on the film 35, form resist 36 with the band shape (elongate) that is about 2.7 μ m width.

Afterwards, as shown in figure 16, use the wet etch techniques of buffer fluoric acid, with resist 36 as mask, etching SiO ₂Film 35.Afterwards, remove resist 36.

Afterwards, as shown in figure 17, using tartaric acid is that etching solution or phosphoric acid are the wet etch techniques of etching solution, with SiO ₂Film 35 is as mask, above p type contact layer 28, etch into p type the 1st covering 25 above.Thus, the protrusion 29 that be formed on when constituting, has tapered side by p type contact layer 28, p type intermediate layer 27 and p type the 2nd covering 26.In addition, the top angulation θ 2 of the side of protrusion 29 and active layer 24 (p type the 1st covering 25) is about 60 °, and the width of the head portion of protrusion 29 is about 2.7 μ m.In addition, protrusion 29 forms as shown in Figure 1 along the band shape (elongate) of extending with the direction of light emergence face 12 quadratures.

Afterwards, as shown in figure 18, use mocvd method, with SiO ₂Film 35 is as selecting growth mask, and formation has the n type electric current barrier layer 30 that is about 2 μ m thickness on whole.At this moment, form n type AlInP layer (not shown) and n type GaAs layer (not shown) successively.In addition, n type electric current barrier layer 30 on p type the 1st covering 25 on selectively after the growth, cover SiO ₂Film 35 ground are along cross growth.

Afterwards, as shown in figure 19, use plasma CVD method, in the zone in addition, zone on n type electric current barrier layer 30, form SiO with the band shape (elongate) that is about 240nm thickness corresponding to peristome 30a (with reference to Fig. 2) ₂Film 37.Afterwards, using phosphoric acid is the wet etch techniques of etching solution, with SiO ₂Film 37 is as mask, and etching is positioned at the top n type electric current barrier layer 30 by the top than protrusion 29.Thus, as shown in figure 20, formation has protrusion 29 (SiO ₂Film 35) the n type electric current barrier layer 30 of the peristome 30a that exposes above.At this moment, the peristome 30a of n type electric current barrier layer 30 forms the width ratio with bottom side and opens side within the little taper of distolateral width.In addition, the top angulation θ 3 of side and active layer 24 (p type contact layer 28) is 70 ° within the peristome 30a of n type electric current barrier layer 30.In addition, the distolateral width of opening of the peristome 30a of n type electric current barrier layer 30 is about 3 μ m, and the width of bottom side is about 2.7 μ m.In addition, the peristome 30a of n type electric current barrier layer 30 forms band shape (elongate) along protrusion 29 as shown in Figure 1.In addition, the peristome 30a of this n type electric current barrier layer 30 becomes the contraposition recess.Afterwards, remove SiO ₂Film 35 and 37.

Afterwards, as shown in figure 21, use the electron beam evaporation plating method, on n type electric current barrier layer 30, have the p lateral electrode 31 that is about 0.3 μ m thickness with top the formation contiguously of protrusion 29 (p type contact layer 28).At this moment, form AuZn layer (not shown) and Pt layer (not shown) successively.Thus, the contraposition that is made of the peristome 30a of n type electric current barrier layer 30 is about 400nm with concave depth (degree of depth above the p lateral electrode 31 above the p lateral electrode 31 on above being positioned at electric current barrier layer 30 on above being positioned at protrusion 29) D1.That is, the contraposition that is made of the peristome 30a of n type electric current barrier layer 30 with concave depth D1 (being about 400nm) than the contraposition that is made of protrusion 8 with the projecting height H1 (being about 153nm) (with reference to Fig. 2) of protuberance greatly.

Afterwards, as shown in figure 22, grind the back side of n type GaAs substrate 21, till above protrusion 29, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 21.Afterwards, use the electron beam evaporation plating method, on the zone beyond the formations zone of the contact hole 120a (with reference to Fig. 2) at n type GaAs substrate 21 back sides, when formation has as the function of etching mask, also have a n lateral electrode 32 that is about 1 μ m thickness.At this moment, form AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) successively.

Then, as shown in figure 23, utilizing chlorine is the RIE method of gas, and n lateral electrode 32 as mask, is formed the circular contact hole 120a that runs through n type GaAs substrate 21, each layer of semiconductor (22～25 and 30) and p lateral electrode 31 from the back side of n type GaAs substrate 21.This contact hole 120a forms aperture with the p lateral electrode 31 sides little tapered inner side surfaces in aperture (tens of μ m) than n lateral electrode 32 sides.

Afterwards, as shown in figure 24, use plasma CVD method, on the medial surface of contact hole 120a and be positioned on n lateral electrode 32 and surfaces n type GaAs substrate 21 opposition sides of contact hole 120a near zone, form have about 200nm thickness by SiO ₂The dielectric film 38 that film constitutes.

Afterwards, as shown in figure 25, on corresponding to the regulation zone outside the zone of contact hole 120a, form resist 40.Afterwards, use the electron beam evaporation plating method, on resist 40 and surfaces n type GaAs substrate 21 opposition sides and on dielectric film 38 and the surfaces and medial surface n type GaAs substrate 21 opposition sides, form taking-up electrode 39 with about 0.3 μ m thickness.At this moment, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, utilize the method for lifting to remove resist 40.Thus, as shown in figure 26, remove unnecessary portions, as taking out electrode 39.Thus, form the red laser element 120 of the 1st execution mode.

Afterwards, with reference to Figure 27 and Figure 28, the joint method of bluish violet color laser element 110 and red laser element 120 is described.At first, as shown in figure 27, on the p of red laser element 120 lateral electrode 31, form the soldering-tin layer 115 that constitutes by Au-Sn.

Afterwards, as shown in figure 28, the contraposition that will be made of the protrusion 8 of bluish violet color laser element 110 becomes state towards downside with protuberance, simultaneously, the contraposition that constitutes by the peristome 30a that is embedded into by the n type electric current barrier layer 30 of red laser element 120 is carried out contraposition with in the recess.At this moment, the contraposition that is made of protrusion 8 by visual transparent region 111 identifications from Figure 10 and bluish violet color laser element 110 shown in Figure 12 on one side is with protuberance and the contraposition recess that is made of the peristome 30a of n type electric current barrier layer 30, the Z direction embedding of an edge Figure 28.In addition, the contraposition that will constitute by protrusion 8 embed with protuberance contraposition that the peristome 30a by n type electric current barrier layer 30 constitutes with the state in the recess under, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 115 that fusion is made of Au-Sn.Afterwards, solidify, utilize soldering-tin layer 115 to engage bluish violet color laser element 110 and red laser element 120 by soldering-tin layer in being cooled to the process of room temperature 115.

At this moment, in the 1st execution mode, the contraposition that can constitute with protuberance and peristome 30a by n type electric current barrier layer 30 by the contraposition that is made of protrusion 8 suppresses the dislocation on (directions X of Fig. 1 and Fig. 2) in the horizontal direction of bluish violet color laser element 110 and red laser element 120 with recess chimeric.Thus, the direction of riving that can suppress bluish violet color laser element 110 and red laser element 120 staggers each other.

Afterwards, form light emergence face 12 (with reference to Fig. 1) afterwards, be separated into each element at bluish violet color laser element 110 that is engaged with each other by riving simultaneously and red laser element 120.At last, as depicted in figs. 1 and 2,, form the integrated semiconductor laser device of the 1st execution mode by bond line 122 on the surface of the n of red laser element 120 lateral electrode 32 and taking-up electrode 39.

(the 2nd execution mode)

With reference to Figure 29 and Figure 30 illustrate in the 2nd execution mode, different with above-mentioned the 1st execution mode, on the bluish violet color laser element, be provided with contraposition with recess in, the situation of contraposition with protuberance be set in the red laser element.

In the 2nd execution mode, as shown in figure 30, have along Z direction stacked (integrated) and have contraposition with the bluish violet color laser element 130 of recess with have the structure of contraposition with the red laser element 140 of protuberance.In addition, bluish violet color laser element 130 and red laser element 140 are respectively examples of ' the 1st semiconductor Laser device ' of the present invention and ' the 2nd semiconductor Laser device '.

The structure of the bluish violet color laser element 130 of the 2nd execution mode at first, is described.In the bluish violet color laser element 130 of the 2nd execution mode, as shown in figure 30, on n type GaN substrate 1, form n type covering 2, active layer 3, light guide layer 4, cap rock 5, p type covering 6 and p type contact layer 7 successively.P type covering 6 has the par beyond protuberance and the protuberance, simultaneously, on the protuberance of p type covering 6, forms p type contact layer 7.In addition, the protuberance by p type contact layer 7 and p type covering constitutes protrusion 8.In addition, each layer of semiconductor (2～7) has composition and the thickness the same with each layer of semiconductor (2～7) of above-mentioned the 1st execution mode.In addition, protrusion 8 has the shape the same with the protrusion 8 of above-mentioned the 1st execution mode.In addition, the peripheral part of the active layer 3 of protrusion 8 belows and active layer 3 constitutes the light-emitting zone 13 of bluish violet color laser element 130.In addition, protrusion 8 is examples of ' the 2nd protrusion ' of the present invention.

In addition, in the 2nd execution mode, only go up formation and have the p lateral electrode 41 of about 10nm thickness at protrusion 8 (p type contact layer 7).This p lateral electrode 41 is made of Pt layer (not shown) and Pd layer (not shown) from n type GaN substrate 1 side order.In addition, p lateral electrode 41 is examples of ' the 1st electrode ' of the present invention.

Here, in the 2nd execution mode, on the par of p type covering 6, the thickness of formation laterally (being about 1.5 μ m) that covers protrusion 8 and p lateral electrode 41 than the height to p lateral electrode 41 (about 363nm) above the par of p type covering 6 greatly and formed the easy SiO of etching of usefulness by recess ₂The electric current barrier layer 42 that film constitutes.This electric current barrier layer 42 has the peristome 42a that exposes above of p lateral electrode 41.In addition, the peristome 42a of electric current barrier layer 42 has the width (width of the head portion of protrusion 8 (being about 1.5 μ m)) of bottom side than the open distolateral little concavity tapered inner side surfaces of width.In addition, the peristome 42a of electric current barrier layer 42 forms the band shape (elongate) of extending along the Y direction as shown in figure 29 along protrusion 8.In addition, the peristome 42a of electric current barrier layer 42 constitutes the U word shape recess that contraposition is used.In addition, as shown in figure 30, the contraposition that is made of the peristome 42a of electric current barrier layer 42 is about 1.14 μ m with concave depth (degree of depth above electric current barrier layer 42 to p lateral electrode 41) D2.In addition, peristome 42a is an example of ' recess ' of the present invention.

In addition, on the back side of n type GaN substrate 1, formation has and the n lateral electrode 11 the same compositions of above-mentioned the 1st execution mode and the n lateral electrode 11 of thickness.

Below, the structure of the red laser element 140 of the 2nd execution mode is described.In addition, in the red laser element 140 of Figure 30 protrusion 54 sides towards the below.In the red laser element 140 of the 2nd execution mode, as shown in figure 30, on the surface of bluish violet color laser element 130 sides of n type GaAs substrate 21, form n type resilient coating 22, n type covering 23, active layer 24 and p type the 1st covering 25 successively.In addition, each layer of semiconductor (22～25) has composition and the thickness the same with each layer of semiconductor (22～25) of above-mentioned the 1st execution mode.

In addition, in the 2nd execution mode, in the lip-deep regulation zone of bluish violet color laser element 130 sides of p type the 1st covering 25, p type the 2nd covering 51 that is formed on when having composition the same and thickness, has the width of the head portion convex littler than the width (being about 2.7 μ m) of the head portion of p type the 2nd covering 26 of above-mentioned the 1st execution mode with p type the 2nd covering 26 of above-mentioned the 1st execution mode.On the surface of bluish violet color laser element 130 sides of p type the 2nd covering 51, form p type intermediate layer 52 and p type contact layer 53 successively.This p type intermediate layer 52 and p type contact layer 53 have composition and the thickness the same with the p type intermediate layer 27 of above-mentioned the 1st execution mode and p type contact layer 28 respectively.In addition, constitute protrusion 54 by p type the 2nd covering 51, p type intermediate layer 52 and p type contact layer 53.

Here, in the 2nd execution mode, the width that protrusion 54 has the top ends side is than wide of root side little tapered side.In addition, the surperficial angulation θ 4 of the side of protrusion 54 and active layer 24 is about 60 °.In addition, protrusion 54 forms as shown in figure 29 along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 43 quadratures.And protrusion 54 constitutes the contraposition protuberance.In addition, as shown in figure 30, constitute the light-emitting zone 57 of red laser element 140 corresponding to the peripheral part of the active layer 24 of the formation position of protrusion 54 and active layer 24.In addition, protrusion 54 is examples of ' protuberance ' of the present invention and ' the 1st protrusion '.In addition, light-emitting zone 57 is examples of ' the 2nd light-emitting zone ' of the present invention.

In addition, on the surface of bluish violet color laser element 130 sides of p type the 1st covering 25, cover forming laterally of protrusion 54 and be positioned at the n type electric current barrier layer 55 that part on the zone beyond protrusion 54 sides has about 800nm thickness.This n type electric current barrier layer 55 is by being that n type AlInP layer (not shown) and n type GaAs layer (not shown) constitute from n type GaAs substrate 21 sides, order.In addition, in the surface of bluish violet color laser element 130 sides that cover protrusion 54 and n type electric current barrier layer 55, the forming partially of side that covers protrusion 54 has the p lateral electrode 56 of about 0.3 μ m thickness.This p lateral electrode 56 is by being AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 21 sides, order.In addition, p lateral electrode 56 is examples of ' the 2nd electrode ' of the present invention.Thus, the contraposition that is made of protrusion 54 is about 800nm with the projecting height of protuberance (from being positioned at corresponding to the p lateral electrode 56 in zone outside the zone of protrusion 54 on the surface of bluish violet color laser element 130 sides to being positioned at corresponding to the p lateral electrode 56 in the zone of protrusion 54 height on the surface of bluish violet color laser element 130 sides) H2.That is, the contraposition that is made of the peristome 42a of electric current barrier layer 42 with concave depth D2 (being about 1.14 μ m) than the contraposition that is made of protrusion 54 with the projecting height H2 (being about 800nm) of protuberance greatly.In addition, n type GaAs substrate 21 with surfaces bluish violet color laser element 130 opposition sides on, form and to have form and the n lateral electrode 32 of thickness the same with the n lateral electrode 32 of above-mentioned the 1st execution mode.

In addition, form from n lateral electrode 32 and surfaces bluish violet color laser element 130 opposition sides, run through the circular contact hole 140a of n lateral electrode 32, n type GaAs substrate 21, each layer of semiconductor (22～25 and 55) and p lateral electrode 56.This contact hole 140a is tens of μ m at the diameter of n lateral electrode 32 sides, and the aperture with p lateral electrode 56 sides is than the little tapered inner side surfaces in aperture of n lateral electrode 32 sides.On the medial surface of contact hole 140a and be positioned on n lateral electrode 32 and surfaces bluish violet color laser element 130 opposition sides of contact hole 140a near zone, form have be about 200nm thickness by SiO ₂The dielectric film 58 that film constitutes.In the regulation zone on dielectric film 58, form with soldering-tin layer 135 described later through contact hole 140a with being electrically connected and to have the taking-up electrode 59 that is about 0.3 μ m thickness.This taking-up electrode 59 is by from n type GaAs substrate 21 sides being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation in proper order.In addition, in n lateral electrode 32 with take out on electrode 59 and surfaces bluish violet color laser element 130 opposition sides bond line (gold thread) 122.

Here, in the 2nd execution mode, as shown in figure 30, red laser element 140 and bluish violet color laser element 130 with the contraposition that will constitute by protrusion 54 with protuberance embed contraposition that the peristome 42a by electric current barrier layer 42 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 130 and red laser element 140 is configured on the same line along the stacked direction (the Z direction of Figure 30) of semiconductor layer.In addition, as mentioned above, because the contraposition of bluish violet color laser element 130 is bigger with the projecting height H2 (being about 800nm) of protuberance than the contraposition of red laser element 140 with concave depth D2 (being about 1.14 μ m), thus the contraposition of bluish violet color laser element 130 with the contraposition of the bottom surface of recess and red laser element 140 with between protuberance top every, than the contraposition of bluish violet color laser element 130 with the contraposition of the zone beyond the recess and red laser element 140 with protuberance zone in addition between every greatly.In addition, the contraposition of bluish violet color laser element 130 engages via the soldering-tin layer 135 that Au-Sn constitutes with protuberance with the contraposition of red laser element 140 with recess.In addition, soldering-tin layer 135 is examples of ' knitting layer ' of the present invention.In addition, the p lateral electrode 56 of the p lateral electrode 41 of bluish violet color laser element 140 and red laser element 140 is electrically connected on through soldering-tin layer 135 and takes out on the electrode 59.

In the 2nd execution mode, as mentioned above, the contraposition that constitutes by the peristome 42a with the electric current barrier layer 42 of bluish violet color laser element 130 embeds contraposition that the protrusion 54 of red laser element 140 constitutes with in the protuberance with recess, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 130 in the time of can suppressing to fit bluish violet color laser element 130 and red laser element 140 and red laser element 140 be the dislocation on (directions X of Figure 30) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 130 and situation from optical axis along continuous straight runs (directions X of Figure 30) dislocation of the ejaculation light of red laser element 140, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 130 when bluish violet color laser element 130 is with red laser element 140 because can suppress to fit and red laser element 140 be the dislocation on (directions X of Figure 30) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 130 and red laser element 140 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 130 being rived simultaneously afterwards with red laser element 140.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 43 ejaculations.

In addition, in the 2nd execution mode, be configured in by light-emitting zone 57 on the same line of stacked direction (the Z direction of Figure 30) of semiconductor layer the light-emitting zone 13 of bluish violet color laser element 130 and red laser element 140, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 30) and horizontal direction (directions X of Figure 30)) in the position of the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 130 and red laser element 140, can reduce the light-emitting zone 13 of bluish violet color laser element 130 and the location interval of the light-emitting zone 57 of red laser element 140.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulating optical axis so that the light that penetrates from one of the light-emitting zone 13 of bluish violet color laser element 130 and light-emitting zone 57 of red laser element 140 incides under the situation the regulation zone of optical system, can suppress to incide situation the zone in the regulation zone of departing from optical system greatly from the light that light-emitting zone 57 the opposing party of the light-emitting zone 13 of bluish violet color laser element 130 and red laser element 140 penetrate.Consequently, because become easier, so can further reduce the cost of optical axis adjustment cost with respect to the optical axis adjustment of optical system.

In addition, other effect of the 2nd execution mode is the same with above-mentioned the 1st execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 2nd execution mode is described with reference to Figure 29～Figure 50.

In the 2nd execution mode, utilize Figure 31～process shown in Figure 39, form bluish violet color laser element 130, simultaneously, utilize Figure 40～process shown in Figure 48, form red laser element 140.When forming bluish violet color laser element 130, at first shown in figure 32, use the process the same with the 1st execution mode shown in Figure 3, be formed up to p type contact layer 7.Afterwards, use the electron beam evaporation plating method, on p type contact layer 7, formation has the p lateral electrode 41 of about 10nm thickness.At this moment, form Pt layer (not shown) and Pd layer (not shown) successively.In addition, as shown in figure 31, the end that will be arranged in the p lateral electrode 41 of the end face 1a side parallel with the light emergence face 43 (with reference to Figure 29) of n type GaN substrate 1 is configured in the zone of predetermined distance at interval with the end face 1a of n type GaN substrate 1.

Afterwards, as shown in figure 33, use plasma CVD method, on p lateral electrode 41, formation has the Al that is about 320nm thickness successively ₂O ₃Film 44 and SiO with about 480nm thickness ₂Film 45.Afterwards, at SiO ₂In the zone on the film 45, form resist 46 with the band shape (elongate) that is about 1.5 μ m width corresponding to protrusion 8 (with reference to Figure 30).

Afterwards, as shown in figure 34, use CF ₄Be the RIE method of gas, with resist 46 as mask, etching SiO ₂Film 45, Al ₂O ₃Film 44 and p lateral electrode 41.Afterwards, remove resist 46.

Afterwards, as shown in figure 35, using chlorine is the RIE method of gas, with SiO ₂Film 45 etches into p type covering 6 degree of depth midway as mask above p type contact layer 7.When thus, forming protuberance by p type covering 6 and constitute with p type contact layer 7, have a protrusion 8 with the protrusion 8 the same shapes of above-mentioned the 1st execution mode.

Afterwards, as shown in figure 36, using phosphoric acid is wet etch techniques, from Al ₂O ₃The side of film 44 is along lateral etches to prescribed depth.

Afterwards, as shown in figure 37, use plasma CVD method or electron beam evaporation plating method etc., on the par of p type covering 6, cover forming laterally of protrusion 8 and p lateral electrode 41 have about 1.5 μ m thickness by SiO ₂The electric current barrier layer 42 that film constitutes.Afterwards, using phosphoric acid is the wet etch techniques of etching solution, removes Al ₂O ₃Film 44.At this moment, Al ₂O ₃SiO on the film 44 ₂Film 45, be positioned at SiO ₂Near the film 45 by SiO ₂The part of the electric current barrier layer 42 that film constitutes is also removed simultaneously.Thus, as shown in figure 38, form the electric current barrier layer 42 of the peristome 42a that exposes above with p lateral electrode 41.At this moment, the peristome 42a of electric current barrier layer 42 forms the open distolateral little concavity tapered inner side surfaces of width of width ratio with bottom side.In addition, the width of the bottom side of the peristome 42a of electric current barrier layer 42 is about 1.5 μ m.In addition, the peristome 42a of electric current barrier layer 42 forms band shape (elongate) along protrusion 8 as shown in figure 29.In addition, the peristome 42a of this electric current barrier layer 42 constitutes the U word shape recess that contraposition is used.In addition, the contraposition that is made of the peristome 42a of electric current barrier layer 42 is about 1.14 μ m with concave depth (degree of depth above electric current barrier layer 42 to p lateral electrode 41) D2.

Afterwards, as shown in figure 39, grind the back side of n type GaN substrate 1, be about 150 μ m up to thickness above protrusion 8 to the back side of n type GaN substrate 1.Afterwards, use the electron beam evaporation plating method, on the back side of n type GaN substrate 1, formation has and the n lateral electrode 11 the same compositions of above-mentioned the 1st execution mode and the n lateral electrode 11 of thickness.At this moment, the same with the process of the 1st execution mode shown in Figure 12, the end that will be arranged in the n lateral electrode 11 of end face 1a (with reference to Figure 31) side parallel with the light emergence face 43 of n type GaN substrate 1 is configured in the zone of predetermined distance at interval with the end face 1a of n type GaN substrate 1.Thus, when as shown in figure 31, the zone that does not form p lateral electrode 41 is formed in applying bluish violet color laser element 130 with red laser element 140, can be by the visual transparent region 111 of discerning the protrusion 8 of bluish violet color laser element 130 above or below the element.So just form the bluish violet color laser element 130 of the 2nd execution mode.

Below, when forming red laser element 140, at first as shown in figure 40, use the process the same with the 1st execution mode shown in Figure 14, be formed up to p type the 1st covering 25.Then, use mocvd method, on p type the 1st covering 25, p type the 2nd covering 51, p type intermediate layer 52 and p type contact layer 53 are grown successively.At this moment, make p type the 2nd covering 51, p type intermediate layer 52 and 53 growths of p type contact layer with the growth conditions the same with p type the 2nd covering 26 of above-mentioned the 1st execution mode, p type intermediate layer 27 and p type contact layer 28.Afterwards, use sputtering method, vacuum vapour deposition or electron beam evaporation plating method, in the zone on p type contact layer 53, form the SiO of band shape (elongate) with about 240nm thickness corresponding to protrusion 54 (with reference to Figure 30) ₂ Film 47.

Afterwards, as shown in figure 41, using tartaric acid is that etching solution or phosphoric acid are the wet etch techniques of etching solution, above p type contact layer 53, etch into p type the 1st covering 25 above.Thus, form the protrusion 54 that constitutes by p type contact layer 53, p type intermediate layer 52 and p type the 2nd covering 51.In addition, protrusion 54 form have the top ends side width than wide of root side little tapered side.In addition, the top angulation θ 4 of the side of protrusion 54 and active layer 24 (p type the 1st covering 25) is about 60 °.In addition, protrusion 54 forms as shown in figure 29 along the band shape (elongate) of extending with the direction of light emergence face 43 quadratures.And this protrusion 54 constitutes the contraposition protuberance.

Afterwards, as shown in figure 42, use mocvd method, with SiO ₂Film 47 is as selecting growth mask, on p type the 1st covering 25 on, cover forming laterally of protrusion 54 and be positioned at the n type electric current barrier layer 55 that part on the zone beyond protrusion 54 sides has the thickness of about 800nm.At this moment, form n type AlInP layer (not shown) and n type GaAs layer (not shown) successively.Afterwards, remove SiO ₂Film 47.

Afterwards, as shown in figure 43, use the electron beam evaporation plating method, the forming partially of top and protrusion 54 sides that covers protrusion 54 and n type electric current barrier layer 55 has the p lateral electrode 56 that is about 0.3 μ m thickness.At this moment, form AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Thus, the contraposition that constitutes by protrusion 54 with the projecting height of protuberance (the p lateral electrode 56 on above being positioned at electric current barrier layer 55 above on above being positioned at protrusion 54 p lateral electrode 56 above height) H2 is about 800nm.That is, the contraposition that is made of the peristome 42a of electric current barrier layer 42 with concave depth D2 (being about 1.14 μ m) than the contraposition that is made of protrusion 54 with the projecting height H2 (being about 800nm) (with reference to Figure 30) of protuberance greatly.

Afterwards, as shown in figure 44, grind the back side of n type GaAs substrate 21, till above protrusion 54, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 21.Afterwards, use the electron beam evaporation plating method, on the zone beyond the formation zone of the contact hole 140a (with reference to Figure 30) at n type GaAs substrate 21 back sides, when forming the function that has as etching mask, also have the composition the same and a n lateral electrode 32 of thickness with the n type electrode 32 of above-mentioned the 1st execution mode.

Then, as shown in figure 45, utilizing chlorine is the RIE method of gas, and n lateral electrode 32 as mask, is formed the circular contact hole 140a that runs through n type GaAs substrate 21, each layer of semiconductor (22～25 and 55) and p lateral electrode 56 from the back side of n type GaAs substrate 21.This contact hole 140a forms aperture with the p lateral electrode 56 sides little tapered inner side surfaces in aperture (tens of μ m) than n lateral electrode 32 sides.

Afterwards, as shown in figure 46, use plasma CVD method, on the medial surface of contact hole 140a and be positioned on n lateral electrode 32 and surfaces n type GaAs substrate 21 opposition sides of contact hole 140a near zone, form have about 200nm thickness by SiO ₂The dielectric film 58 that film constitutes.

Afterwards, as shown in figure 47, on corresponding to the regulation zone outside the zone of contact hole 140a, form resist 60.Afterwards, use the electron beam evaporation plating method, on resist 60 and surfaces n type GaAs substrate 21 opposition sides and on dielectric film 58 and the surfaces and medial surface n type GaAs substrate 21 opposition sides, form taking-up electrode 59 with about 0.3 μ m thickness.At this moment, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, utilize the method for lifting to remove resist 60.Thus, as shown in figure 48, remove unnecessary portions, as taking out electrode 59.Thus, form the red laser element 140 of the 2nd execution mode.

Afterwards, with reference to Figure 49 and Figure 50, the joint method of bluish violet color laser element 130 and red laser element 140 is described.At first, as shown in figure 49, on the p of red laser element 140 lateral electrode 56, form the soldering-tin layer 135 that constitutes by Au-Sn.

Afterwards, as shown in figure 50, the contraposition that will be made of the peristome 42a of the electric current barrier layer 42 of bluish violet color laser element 130 becomes state towards downside with recess, simultaneously, the contraposition that constitutes by the protrusion 54 that is embedded into by red laser element 140 is carried out contraposition with in the protuberance.At this moment, on one side the contraposition that constitutes by the peristome 42a of electric current barrier layer 42 by visual transparent region 111 identifications from bluish violet color laser element 130 shown in Figure 31 with recess and the contraposition protuberance that constitutes by protrusion 54, an edge Z direction embedding.And, embed the contraposition that constitutes by protrusion 54 in recess with under the state of protuberance, in contraposition that the peristome 42a by electric current barrier layer 42 constitutes by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 135 that fusion is made of Au-Sn.Afterwards, solidify, utilize soldering-tin layer 135 to engage bluish violet color laser element 130 and red laser element 140 by soldering-tin layer in being cooled to the process of room temperature 135.

At this moment, in the 2nd execution mode, can utilize contraposition that the peristome 42a by electric current barrier layer 42 constitutes to suppress the dislocation on (directions X of Figure 29 and Figure 30) in the horizontal direction of bluish violet color laser element 130 and red laser element 140 with protuberance chimeric with recess and the contraposition that constitutes by protrusion 54.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 130 and red laser element 140 staggers each other.

Afterwards, form light emergence face 43 (with reference to Figure 29) afterwards, be separated into each element at bluish violet color laser element 130 that is engaged with each other by riving simultaneously and red laser element 140.At last, as Figure 29 and shown in Figure 30,, form the integrated semiconductor laser device of the 2nd execution mode by bond line 122 on the surface of the n of red laser element 140 lateral electrode 32 and taking-up electrode 59.

(the 3rd execution mode)

With reference to Figure 51 and Figure 52 illustrate in the 3rd execution mode, different with the above-mentioned the 1st and the 2nd execution mode, contraposition is set with forming the situation of contraposition in the protuberance, in the substrate of red laser element with recess in the bluish violet color laser element.

In the 3rd execution mode, shown in Figure 52, have along Z direction stacked (integrated) and have contraposition with the bluish violet color laser element 110 of protuberance with have the structure of contraposition with the red laser element 150 of recess.In addition, bluish violet color laser element 110 has the structure the same with the bluish violet color laser element 110 of above-mentioned the 1st execution mode.In addition, red laser element 150 is examples of ' the 2nd semiconductor Laser device ' of the present invention.

The structure of the red laser element 150 of the 3rd execution mode at first, is described.In the red laser element 150 of the 3rd execution mode, shown in Figure 52, on n type GaAs substrate 61, form n type resilient coating 22, n type covering 23, active layer 24, p type the 1st covering 25, p type the 2nd covering 51, p type intermediate layer 52 and p type contact layer 53 successively.P type the 2nd covering 51 has the par beyond protuberance and the protuberance, and simultaneously, p type intermediate layer 52 and p type contact layer 53 form on the protuberance of p type the 2nd covering 51 successively.In addition, form protrusion 54 by p type contact layer 53, p type intermediate layer 52 and p type the 2nd covering 51.In addition, each layer of semiconductor (22～25,51～53) has the same composition and the thickness of each layer of semiconductor (22～25,51～53) with above-mentioned the 2nd execution mode.In addition, protrusion 54 has the shape the same with the protrusion 54 of above-mentioned the 2nd execution mode.And the active layer 24 of protrusion 54 belows and the peripheral part of active layer 24 constitute the light-emitting zone 57 of red laser element 150.

In addition, in the 3rd execution mode, on p type the 1st covering 25, the formation laterally that covers protrusion 54 has the n type electric current barrier layer 62 of about 1.6 μ m thickness.This n type electric current barrier layer 62 is by being that n type AlInP layer (not shown) and n type GaAs layer (not shown) constitute from n type GaAs substrate 61 sides, order.Have and the p lateral electrode 56 the same compositions of above-mentioned the 2nd execution mode and the p lateral electrode 63 of thickness with going up above the protrusion 54 (p type contact layer 53) to form at n type electric current barrier layer 62.

In addition, form above p lateral electrode 63, run through the circular contact hole 150a of p lateral electrode 63, each layer of semiconductor (62,25～22) and n type GaAs substrate 61.This contact hole 150a is tens of μ m at the diameter of p lateral electrode 63 sides, has the aperture little tapered inner side surfaces of the aperture of n type GaAs substrate 61 sides than p lateral electrode 63 sides.On the medial surface of contact hole 150a and be positioned on the surface of p lateral electrode 63 of contact hole 150a near zone, form have be about 200nm thickness by SiO ₂The dielectric film 68 that film constitutes.In the regulation zone on dielectric film 68, form with n lateral electrode 64 described later through contact hole 150a with being electrically connected and to have the taking-up electrode 69 that is about 0.3 μ m thickness.This taking-up electrode 69 is by from n type GaAs substrate 61 sides being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation in proper order.In addition, on the surface of p lateral electrode 63 and taking-up electrode 69, bond line (gold thread) 122.

Here, in the 3rd execution mode, in the zone corresponding to protrusion 54 of n type GaAs substrate 61 rear side, formation has the recess 61a that is about the 1 μ m degree of depth.The recess 61a of this n type GaAs substrate 61 has the width of bottom side than side within the little taper of open distolateral width (about 3 μ m).In addition, the surperficial angulation θ 5 of side and active layer 24 is about 60 ° within the recess 61a of n type GaAs substrate 61.In addition, the recess 61a of n type GaAs substrate 61 forms the band shape (elongate) of extending along the Y direction along protrusion 54 shown in Figure 51.And the recess 61a of n type GaAs substrate 61 constitutes the contraposition recess.In addition, n type GaAs substrate 61 is examples of ' substrate ' of the present invention.

On the back side that comprises recess 61a of n type GaAs substrate 61, form n lateral electrode 64 with about 0.3 μ m thickness with taking-up electrode 69 with being electrically connected.This n lateral electrode 64 is by from n type GaAs substrate 61 sides being AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) formation in proper order.In addition, n lateral electrode 64 is examples of ' the 2nd electrode ' of the present invention.Thus, the contraposition that is made of the recess 61a of n type GaAs substrate 61 is about 1 μ m with concave depth (from the n lateral electrode 64 that is positioned at zone outside the recess 61a on the surface of bluish violet color laser element 110 sides to the degree of depth that is positioned at corresponding to the surface of bluish violet color laser element 110 sides of the n lateral electrode 64 in the zone of recess 61a) D3.That is, the contraposition that is made of the recess 61a of n type GaAs substrate 61 with concave depth D3 (being about 1 μ m) than the contraposition that is made of protrusion 8 with the projecting height H1 (being about 153nm) of protuberance greatly.

Here, in the 3rd execution mode, shown in Figure 52, bluish violet color laser element 110 and red laser element 150 with the contraposition that will constitute by protrusion 8 with protuberance embed contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 150 is configured on the same line along the stacked direction (the Z direction of Figure 52) of semiconductor layer.In addition, as mentioned above, because the contraposition of red laser element 150 is bigger with the projecting height H1 (being about 153nm) of protuberance than the contraposition of bluish violet color laser element 110 with concave depth D3 (being about 1 μ m), thus the contraposition of bluish violet color laser element 110 with the contraposition of the top and red laser element 150 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 110 with the contraposition of the zone beyond the protuberance and red laser element 150 with recess zone in addition between every greatly.In addition, the contraposition of bluish violet color laser element 110 engages via the soldering-tin layer 155 that Au-Sn constitutes with recess with the contraposition of red laser element 150 with protuberance.In addition, soldering-tin layer 155 is examples of ' knitting layer ' of the present invention.In addition, the p lateral electrode 10 of bluish violet color laser element 110 is electrically connected on the taking-up electrode 69 through the n of red laser element 150 lateral electrode 64 and soldering-tin layer 155.

In the 3rd execution mode, as mentioned above, use in the recess with the contraposition of the recess 61a formation of the n type GaAs substrate 61 of protuberance embedding red laser element 150 by the contraposition that the protrusion 8 with bluish violet color laser element 110 constitutes, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 110 in the time of can suppressing to fit bluish violet color laser element 110 and red laser element 150 and red laser element 150 be the dislocation on (directions X of Figure 52) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 110 and situation from optical axis along continuous straight runs (directions X of Figure 52) dislocation of the ejaculation light of red laser element 150, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 110 when bluish violet color laser element 110 is with red laser element 150 because can suppress to fit and red laser element 150 be the dislocation on (directions X of Figure 52) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 110 and red laser element 150 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 110 being rived simultaneously afterwards with red laser element 150.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 58 ejaculations.

In addition, in the 3rd execution mode, be configured in by light-emitting zone 57 on the same line of stacked direction (the Z direction of Figure 52) of semiconductor layer the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 150, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 52) and horizontal direction (directions X of Figure 52)) in the position of the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 150, can reduce the light-emitting zone 13 of bluish violet color laser element 110 and the location interval of the light-emitting zone 57 of red laser element 150.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulate optical axis so that the light that penetrates from one of light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 150 incides under the situation the regulation zone of optical system, can suppress the situation in the zone that the opposing party penetrates from the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 110 and red laser element 150 light incides the regulation zone of departing from optical system greatly.Consequently, because become easier, so can further reduce the cost of optical axis adjustment cost with respect to the optical axis adjustment of optical system.

In addition, in the 3rd execution mode,, can easily in red laser element 150, form the contraposition recess by in the n of red laser element 150 type GaAs substrate 61, forming recess 61a.

In addition, other effect of the 3rd execution mode is the same with above-mentioned the 1st execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 3rd execution mode is described with reference to Figure 51～Figure 63.In addition, the process of the 1st execution mode of the manufacture process of the bluish violet color laser element 110 of the 3rd execution mode and Fig. 3～shown in Figure 13 is the same.

When forming red laser element 150, at first shown in Figure 53, use and Figure 40 and the same process of the 2nd execution mode shown in Figure 41 are formed up to protrusion 54.Afterwards, use mocvd method, with SiO ₂Film 47 is as selecting growth mask, and on p type the 1st covering 25, the formation laterally that covers protrusion 54 has the n type electric current barrier layer 62 of about 1.6 μ m thickness.At this moment, form n type AlInP layer (not shown) and n type GaAs layer (not shown) successively.Afterwards, remove SiO ₂Film 47.

Afterwards, shown in Figure 54, use the electron beam evaporation plating method, protrusion 54 (p type contact layer 53) go up and the regional zone in addition of formations of the contact hole 150a (with reference to Figure 52) of n type electric current barrier layer 62 on, when being formed on the function that has as etching mask, also have the composition the same and a p lateral electrode 63 of thickness with the p lateral electrode 56 of above-mentioned the 2nd execution mode.

Afterwards, shown in Figure 55, using chlorine is the RIE method of gas, and p lateral electrode 63 as mask, is formed the circular contact hole 150a that runs through each layer of semiconductor (62 and 25～22) and n type GaAs substrate 61 above n type electric current barrier layer 62.This contact hole 150a forms aperture with the n type GaAs substrate 61 sides little tapered inner side surfaces in aperture (tens of μ m) than p lateral electrode 63 sides.

Afterwards, shown in Figure 56, use plasma CVD method, on the medial surface of contact hole 150a and on being positioned at above the p lateral electrode 63 of contact hole 150a near zone, form by SiO ₂The dielectric film 68 that film constitutes.

Afterwards, shown in Figure 57, on corresponding to the regulation zone outside the zone of contact hole 150a, form resist 70.Afterwards, use the electron beam evaporation plating method, on resist 70 on and dielectric film 68 above and on the medial surface, form taking-up electrode 69 with about 0.3 μ m thickness.At this moment, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, utilize the method for lifting to remove resist 70.Thus, shown in Figure 58, remove unnecessary portions, as taking out electrode 69.

Afterwards, shown in Figure 59, grind the back side of n type GaAs substrate 61, till above protrusion 54, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 61, afterwards, use plasma CVD method, in the zone in addition, zone corresponding to recess 61a (with reference to Figure 52) on n type GaAs substrate 61 back sides, formation has the SiO that is about 240nm thickness ₂Film 65.

Then, shown in Figure 60, utilizing chlorine is the RIE method of gas, with SiO ₂Film 65 is as mask, the degree of depth from the back etched of n type GaAs substrate 61 to about 1 μ m.Thus, in the rear side of n type GaAs substrate 61, form recess 61a with about 1 μ m degree of depth.At this moment, the recess 61a of n type GaAs substrate 61 forms the width ratio with bottom side and opens side within the little taper of distolateral width.In addition, the distolateral width of opening of the recess 61a of n type GaAs substrate 61 is about 3 μ m.In addition, the surperficial angulation θ 5 of the medial surface of the recess 61a of n type GaAs substrate 61 and active layer 24 (n type GaAs substrate 61) is about 60 °.In addition, the recess 61a of n type GaAs substrate 61 forms band shape (elongate) along protrusion 54 shown in Figure 51.And the recess 61a of n type GaAs substrate 61 constitutes the contraposition recess.Afterwards, remove SiO ₂Film 65.

Afterwards, shown in Figure 61, use the electron beam evaporation plating method, on the back side that comprises recess 61a of n type GaAs substrate 61, form n lateral electrode 64 with being electrically connected with about 0.3 μ m thickness with taking-up electrode 69.At this moment, form AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) successively.Thus, the contraposition that is made of the recess 61a of n type GaAs substrate 61 is about 1 μ m with concave depth (from being positioned at recess 61a with the degree of depth above the n lateral electrode 64 on to the bottom that is positioned at recess 61a above the n lateral electrode 64 of exterior domain) D3.That is, the contraposition that is made of the recess 61a of n type GaAs substrate 61 with concave depth D3 (being about 1 μ m) than the contraposition that is made of protrusion 8 with the projecting height H1 (being about 153nm) (with reference to Figure 52) of protuberance greatly.Like this, form the red laser element 150 of the 3rd execution mode.

Afterwards, with reference to Figure 62 and Figure 63, the joint method of bluish violet color laser element 110 and red laser element 150 is described.At first, shown in Figure 62, on the n of red laser element 150 lateral electrode 64, form the soldering-tin layer 155 that constitutes by Au-Sn.

Afterwards, shown in Figure 63, the contraposition that will be made of the protrusion 8 of bluish violet color laser element 110 becomes state towards downside with protuberance, simultaneously, the contraposition that constitutes by the recess 61a that is embedded into by the n type GaAs substrate 61 of red laser element 150 is carried out contraposition with in the recess.At this moment, on one side the contraposition that constitutes by protrusion 8 by visual transparent region 111 identifications from Figure 10 and bluish violet color laser element 110 shown in Figure 12 with protuberance and the contraposition recess that constitutes by the recess 61a of n type GaAs substrate 61, an edge Z direction embedding.And, the contraposition that constitutes by protrusion 8 be embedded into protuberance contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess under, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 155 that fusion is made of Au-Sn.Afterwards, solidify, utilize soldering-tin layer 155 to engage bluish violet color laser element 110 and red laser element 150 by soldering-tin layer in being cooled to the process of room temperature 155.

At this moment, in the 3rd execution mode, can utilize contraposition that the contraposition that is made of protrusion 8 constitutes with protuberance and recess 61a by n type GaAs substrate 61 to suppress the dislocation on (directions X of Figure 51 and Figure 52) in the horizontal direction of bluish violet color laser element 110 and red laser element 150 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 110 and red laser element 150 staggers each other.

Afterwards, form light emergence face 58 (with reference to Figure 51) afterwards, be separated into each element at bluish violet color laser element 110 that is engaged with each other by riving simultaneously and red laser element 150.At last, shown in Figure 51 and Figure 52,, form the integrated semiconductor laser device of the 3rd execution mode by bond line 122 on the surface of the p of red laser element 150 lateral electrode 63 and taking-up electrode 69.

(the 4th execution mode)

With reference to Figure 64 and Figure 65 illustrate in the 4th execution mode, different with above-mentioned the 1st～the 3rd execution mode, in the substrate of bluish violet color laser element, form contraposition with forming the situation of contraposition in the protuberance, in the substrate of red laser element with recess.

In the 4th execution mode, shown in Figure 65, have along Z direction stacked (integrated) have contraposition with the bluish violet color laser element 160 of protuberance with have the structure of contraposition with the red laser element 150 of recess.In addition, red laser element 150 has the structure the same with the red laser element 150 of above-mentioned the 3rd execution mode.In addition, bluish violet color laser element 160 is examples of ' the 1st semiconductor Laser device ' of the present invention.

The structure of the bluish violet color laser element 160 of the 4th execution mode at first, is described.In the bluish violet color laser element 160 of the 4th execution mode, shown in Figure 65, on n type GaN substrate 71, form n type covering 2, active layer 3, light guide layer 4, cap rock 5, p type covering 6 and p type contact layer 7 successively.In addition, p type covering 6 has the par beyond protuberance and the protuberance, simultaneously, on the protuberance of p type covering 6, forms p type contact layer 7.In addition, the protuberance by p type contact layer 7 and p type covering 6 constitutes protrusion 8.In addition, each layer of semiconductor (2～7) has composition and the thickness the same with each layer of semiconductor (2～7) of above-mentioned the 1st execution mode.In addition, protrusion 8 has the shape the same with the protrusion 8 of above-mentioned the 1st execution mode.In addition, the peripheral part of the active layer 3 of protrusion 8 belows and active layer 3 constitutes the light-emitting zone 13 of bluish violet color laser element 160.

In addition, the ground, top, par that covers the side of protrusion 8 and p type covering 6 forms and has the composition the same with the electric current barrier layer 9 of above-mentioned the 1st execution mode and the electric current barrier layer 9 of thickness.On electric current barrier layer 9, forming of contact protrusion 8 (p type contact layer 7) has the composition the same with the p lateral electrode 10 of above-mentioned the 1st execution mode and the p lateral electrode 10 of thickness toply.

Here, in the 4th execution mode, in the zone corresponding to protrusion 8 of n type GaN substrate 71 rear side, form the protuberance 71a of projecting height with about 400nm.The width that the protuberance 71a of this n type GaN substrate 71 has top ends is than side within the little taper of the width of root.In addition, the top angulation θ 6 of the side of the protuberance 71a of n type GaN substrate 71 and active layer 3 is about 80 °.In addition, the width of the head portion of the protuberance 71a of n type GaN substrate 71 is about 2 μ m.In addition, the protuberance 71a of n type GaN substrate 71 forms band shape (elongate) along protrusion 8 along the Y direction shown in Figure 64.And the protuberance 71a of n type GaAs substrate 71 constitutes the contraposition protuberance.In addition, n type GaAs substrate 71 is examples of ' substrate ' of the present invention.

In addition, on the back side that comprises protuberance 71a of n type GaN substrate 71, form n lateral electrode 72.This n lateral electrode 72 is from n type GaN substrate 71 sides, has the Al layer (not shown) that is about 6nm thickness by being followed successively by, has the Pd layer (not shown) that is about 10nm thickness and have the Au layer (not shown) that is about 300nm thickness and constitute.In addition, n lateral electrode 72 is examples of ' the 1st electrode ' of the present invention.Thus, the contraposition that is made of the protuberance 71a of n type GaN substrate 71 is about 400nm with the projecting height of protuberance (from being positioned at protuberance 71a with the projecting height above the n lateral electrode 72 on above being positioned at protuberance 71a above the n lateral electrode 72 of exterior domain) H4.That is, the contraposition that constitutes than the recess 71a by n type GaN substrate 71 with concave depth D3 (being about 1 μ m) of the contraposition that is made of the recess 61a of n type GaAs substrate 61 with the projecting height H4 (being about 400nm) of protuberance greatly.

Here, in the 4th execution mode, shown in Figure 65, bluish violet color laser element 160 and red laser element 150 with the contraposition that will constitute by the protuberance 71a of n type GaN substrate 71 with protuberance embed contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 160 and red laser element 150 is configured on the same line along the stacked direction (the Z direction of Figure 65) of semiconductor layer.In addition, as mentioned above, because the contraposition of red laser element 150 is bigger with the projecting height H4 (being about 400nm) of protuberance than the contraposition of bluish violet color laser element 160 with concave depth D3 (being about 1 μ m), thus the contraposition of bluish violet color laser element 160 with the contraposition of the top and red laser element 150 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 160 with the contraposition of the zone beyond the protuberance and red laser element 150 with recess zone in addition between every greatly.In addition, the contraposition of bluish violet color laser element 160 engages via the soldering-tin layer 165 that Au-Sn constitutes with recess with the contraposition of red laser element 150 with protuberance.In addition, soldering-tin layer 165 is examples of ' knitting layer ' of the present invention.In addition, the n lateral electrode 72 of bluish violet color laser element 160 is electrically connected on the taking-up electrode 69 through the n of red laser element 150 lateral electrode 64 and soldering-tin layer 165.

In the 4th execution mode, as mentioned above, the contraposition that constitutes by the protuberance 71a with the n type GaN substrate 71 of bluish violet color laser element 160 embeds contraposition that the recess 61a of the n type GaAs substrate 61 of red laser element 150 constitutes with in the recess with protuberance, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 160 in the time of can suppressing to fit bluish violet color laser element 160 and red laser element 150 and red laser element 150 be the dislocation on (directions X of Figure 65) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 160 and situation from optical axis along continuous straight runs (directions X of Figure 65) dislocation of the ejaculation light of red laser element 150, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 160 when bluish violet color laser element 160 is with red laser element 150 because can suppress to fit and red laser element 150 be the dislocation on (directions X of Figure 65) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 160 and red laser element 150 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 160 being rived simultaneously afterwards with red laser element 150.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 73 ejaculations.

In addition, in the 4th execution mode, be configured in by light-emitting zone 57 on the same line of stacked direction (the Z direction of Figure 65) of semiconductor layer the light-emitting zone 13 of bluish violet color laser element 160 and red laser element 150, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 65) and horizontal direction (directions X of Figure 65)) in the position of the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 160 and red laser element 150, can reduce the light-emitting zone 13 of bluish violet color laser element 160 and the location interval of the light-emitting zone 57 of red laser element 150.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulate optical axis so that the light that penetrates from one of the light-emitting zone 13 of bluish violet color laser element 160 and light-emitting zone 57 of red laser element 150 incides under the situation the regulation zone of optical system, can suppress the situation in the zone that the opposing party penetrates from the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 160 and red laser element 150 light incides the regulation zone of departing from optical system greatly.Consequently, become easier because penetrate light with respect to the optical axis adjustment of optical system, so can further reduce the cost of optical axis adjustment cost.

In addition, in the 4th execution mode,, can easily in bluish violet color laser element 160, form the contraposition protuberance by in the n of bluish violet color laser element 160 type GaN substrate 71, forming protuberance 71a.

In addition, other effect of the 4th execution mode is the same with above-mentioned the 1st execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 4th execution mode is described with reference to Figure 64～Figure 71.In addition, the manufacture process of the red laser element 150 of the 4th execution mode is the same with the process of the 3rd execution mode shown in Figure 53～Figure 61.

When forming bluish violet color laser element 160, at first shown in Figure 66, use and Fig. 3～the same process of the 1st execution mode shown in Figure 11, be formed up to p lateral electrode 10.Afterwards, grind the back side of n type GaN substrate 71, be about 150 μ m up to thickness above protrusion 8 to the back side of n type GaN substrate 71.Afterwards, use plasma CVD method, in the zone on n type GaN substrate 71 back sides, form SiO with about 240nm thickness corresponding to protuberance 71a (with reference to Figure 65) ₂Film 74.

Then, shown in Figure 67, utilizing chlorine is the RIE method of gas, with SiO ₂Film 74 is as mask, the degree of depth from the back etched of n type GaN substrate 71 to about 400nm.Thus, in the rear side of n type GaN substrate 71, form protruding 71a with about 400nm projecting height.At this moment, the protuberance 71a of n type GaN substrate 71 forms the width tapered side littler than the width of root side with top ends side.In addition, the surperficial angulation θ 6 of the side of the protuberance 71a of n type GaN substrate 71 and active layer 3 (n type GaN substrate 71) is about 80 °, and the width of the head portion of the protuberance 71a of n type GaN substrate 71 is about 2 μ m.In addition, the protuberance 71a of n type GaN substrate 71 forms band shape (elongate) along protrusion 8 shown in Figure 64.And the protuberance 71a of this n type GaN substrate 71 constitutes the contraposition protuberance.Afterwards, remove SiO ₂Film 74.

Afterwards, shown in Figure 69, use the electron beam evaporation plating method, on the back side that comprises protuberance 71a of n type GaN substrate 71, form n lateral electrode 72.At this moment, form successively Al layer (not shown) with about 6nm thickness, have the Pd layer (not shown) of about 10nm thickness and have the Au layer (not shown) of about 300nm thickness.Thus, the contraposition that is made of the protuberance 71a of n type GaN substrate 71 is about 400nm with the projecting height of protuberance (from being positioned at protuberance 71a with the projecting height above the n lateral electrode 72 on above being positioned at protuberance 71a above the n lateral electrode 72 of exterior domain) H4.That is, the contraposition that constitutes than the recess 71a by n type GaN substrate 71 with concave depth D3 (being about 1 μ m) (with reference to Figure 65) of the contraposition that is made of the recess 61a of n type GaAs substrate 61 with the projecting height H4 (being about 400nm) of protuberance greatly.In addition, shown in Figure 68, the end that will be arranged in the n lateral electrode 72 of the end face 71b side parallel with the light emergence face 73 (with reference to Figure 64) of n type GaN substrate 71 is configured in the zone of predetermined distance at interval with the end face 71b of n type GaN substrate 71.When thus, the zone that does not form n lateral electrode 72 is formed in applying bluish violet color laser element 160 and red laser element 150 by visual can be from the transparent region 111 of the protuberance 71a of the n type GaN substrate 71 of identification bluish violet color laser element 160 above or below the element.So, form the bluish violet color laser element 160 of the 4th execution mode.

Afterwards, with reference to Figure 70 and Figure 71, the joint method of bluish violet color laser element 160 and red laser element 150 is described.At first, shown in Figure 70, on the n of red laser element 150 lateral electrode 64, form the soldering-tin layer 165 that constitutes by Au-Sn.

Afterwards, shown in Figure 71, the contraposition that will be made of the protuberance 71a of the n type GaN substrate 71 of bluish violet color laser element 160 becomes state towards downside with protuberance, simultaneously, the contraposition that constitutes by the recess 61a that is embedded into by the n type GaAs substrate 61 of red laser element 150 is carried out contraposition with in the recess.At this moment, the contraposition that is made of the protuberance 71a of n type GaN substrate 71 by visual transparent region 111 identifications from the bluish violet color laser element 160 shown in Figure 68 on one side is with protuberance and the contraposition recess that is made of the recess 61a of n type GaAs substrate 61, an edge Z direction embedding.And, the contraposition that will constitute by the protuberance 71a of n type GaN substrate 71 embed with protuberance contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess under, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 165 that fusion is made of Au-Sn.Afterwards, solidify, utilize soldering-tin layer 165 to engage bluish violet color laser element 160 and red laser element 150 by soldering-tin layer in being cooled to the process of room temperature 165.

At this moment, in the 4th execution mode, can utilize contraposition that contraposition that the protuberance 71a by n type GaN substrate 71 constitutes constitutes with protuberance and recess 61a by n type GaAs substrate 61 to suppress the dislocation on (directions X of Figure 64 and Figure 65) in the horizontal direction of bluish violet color laser element 160 and red laser element 150 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 160 and red laser element 150 staggers each other.

Afterwards, form light emergence face 73 (with reference to Figure 64) afterwards, be separated into each element at bluish violet color laser element 160 that is engaged with each other by riving simultaneously and red laser element 150.At last, shown in Figure 65,, form the integrated semiconductor laser device of the 4th execution mode by bond line 122 on the surface of the p of red laser element 150 lateral electrode 63 and taking-up electrode 69.

(the 5th execution mode)

With reference to Figure 72 and Figure 73 illustrate in the 5th execution mode,, the integrated semiconductor laser device that comprise bluish violet color laser element, red laser element and infrared laser element different with above-mentioned the 1st～the 4th execution mode.

In the 5th execution mode, shown in Figure 72, have along Z direction stacked (integrated) have two protuberances that contraposition uses bluish violet color laser element 170, have contraposition with the red laser element 180 of recess with have the structure of contraposition with the infrared laser element 190 of recess.In addition, bluish violet color laser element 170 is examples of ' the 1st semiconductor Laser device ' of the present invention.Red laser element 180 and infrared laser element 190 are examples of ' the 2nd semiconductor Laser device ' of the present invention.

At first, as the structure of the bluish violet color laser element 170 of the 5th execution mode, shown in Figure 72, the same with the bluish violet color laser element 160 of above-mentioned the 4th execution mode.In addition, as the structure of the red laser element 180 of the 5th execution mode, shown in Figure 72, the same with the red laser element 150 of above-mentioned the 3rd execution mode.

Below, the structure of the infrared laser element 190 of the 5th execution mode is described.In addition, protrusion 88 sides in the infrared laser element 190 of Figure 72 are towards the below.In the infrared laser element 190 of the 5th execution mode, shown in Figure 72, n type GaAs substrate 81 with surfaces bluish violet color laser element 170 opposition sides on, form the n type resilient coating 82 that constitutes by n type GaAs with about 500nm thickness.On n type resilient coating 82 and surfaces bluish violet color laser element 170 opposition sides, form the n type covering 83 that constitutes by n type AlGaAs with about 1.5 μ m thickness.On n type covering 83 and surfaces bluish violet color laser element 170 opposition sides, form active layer 84 with about 80nm thickness.This active layer 84 has a plurality of trap layers (not shown) that interaction cascading is made of unadulterated AlGaAs and the MQW structure on a plurality of barrier layers (not shown) of being made of unadulterated AlGaAs.

On active layer 84 and surfaces bluish violet color laser element 170 opposition sides, form p type the 1st covering 85 that constitutes by p type AlGaAs with about 150nm thickness.The p type the 1st covering 85 with surfaces bluish violet color laser element 170 opposition sides on the regulation zone in, form convex p type the 2nd covering 86 that constitutes by p type AlGaAs of thickness with about 800nm.The p type the 2nd covering 86 with surfaces bluish violet color laser element 170 opposition sides on, form the p type cap rock 87 that constitutes by p type GaAs with about 600nm thickness.Constitute protrusion 88 with tapered side that width diminishes to the head portion side from root by this p type cap rock 87 and p type the 2nd covering 86.The surperficial angulation θ 7 of the side of this protrusion 88 and active layer 84 is about 60 °.In addition, the width of the head portion of protrusion 88 is about 2 μ m～3 μ m.In addition, protrusion 88 forms along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 93 quadratures shown in Figure 73.And, shown in Figure 72, constitute the light-emitting zone 94 of infrared laser element 190 corresponding to the peripheral part of the active layer 84 of the formation position of protrusion 88 and active layer 84.In addition, light-emitting zone 94 is examples of ' the 2nd light-emitting zone ' of the present invention.

In addition, the p type the 1st covering 85 with surfaces bluish violet color laser element 170 opposition sides on, cover forming laterally of protrusion 88 and have the n type electric current barrier layer 89 that constitutes by n type GaAs that is about 1.4 μ m thickness.N type electric current barrier layer 89 and protrusion 88 (p type cap rock 87) with surfaces bluish violet color laser element 170 opposition sides on, form and have the p type contact layer 90 that constitutes by p type GaAs that is about 1 μ m thickness.On p type contact layer 90 and surfaces bluish violet color laser element 170 opposition sides, form and have the p lateral electrode 91 of about 1 μ m thickness.This p lateral electrode 91 is from n type GaAs substrate 81 sides, by being followed successively by AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) formation.

In addition, form from p lateral electrode 91 and surfaces bluish violet color laser element 170 opposition sides, run through the circular contact hole 190a of p lateral electrode 91, each layer of semiconductor (90,89,85～82) and n type GaAs substrate 81.This contact hole 190a is tens of μ m at the diameter of p lateral electrode 91 sides, has the aperture little tapered inner side surfaces of the aperture of n type GaAs substrate 81 sides than p lateral electrode 91 sides.On the medial surface of contact hole 190a and be positioned on p lateral electrode 91 and surfaces bluish violet color laser element 170 opposition sides of contact hole 190a near zone, form have be about 200nm thickness by SiO ₂The dielectric film 98 that film constitutes.In the regulation zone on dielectric film 98, form with n lateral electrode 92 described later through contact hole 190a with being electrically connected and to have the taking-up electrode 99 that is about 0.3 μ m thickness.This taking-up electrode 99 is by from n type GaAs substrate 81 sides being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation in proper order.In addition, in p lateral electrode 91 with take out on electrode 99 and surfaces bluish violet color laser element 170 opposition sides bond line (gold thread) 122.

Here, in the 5th execution mode, in the zone corresponding to protrusion 88 on the surface of bluish violet color laser element 170 sides of n type GaAs substrate 81, form and have the recess 81a that is about the 1 μ m degree of depth.The recess 81a of this n type GaAs substrate 81 has the width of bottom side than side within the little taper of open distolateral width (being about 3 μ m).In addition, the surperficial angulation θ 8 of side and active layer 84 is about 60 ° within the recess 81a of n type GaAs substrate 81.In addition, the recess 81a of n type GaAs substrate 81 forms the band shape (elongate) of extending along the Y direction along protrusion 88 shown in Figure 73.And the recess 81a of n type GaAs substrate 81 constitutes the contraposition recess.In addition, n type GaAs substrate 81 is examples of ' substrate ' of the present invention.

In addition, shown in Figure 72, on the surface of bluish violet color laser element 170 sides that comprise recess 81a of n type GaAs substrate 81, and take out electrode 99 and form n lateral electrode 92 with being electrically connected with about 0.3 μ m thickness.This n lateral electrode 92 is by from n type GaAs substrate 81 sides being AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) formation in proper order.In addition, n lateral electrode 92 is examples of ' the 2nd electrode ' of the present invention.Thus, the contraposition that is made of the recess 81a of n type GaAs substrate 81 is about 1 μ m with concave depth (from being positioned at corresponding to recess 81a zone with the surface of bluish violet color laser element 170 sides of the n lateral electrode 92 of exterior domain to the degree of depth that is positioned at corresponding to the surface of bluish violet color laser element 170 sides of the n lateral electrode 92 in the zone of recess 81a) D5.That is, the contraposition that constitutes than the recess 71a by n type GaN substrate 71 with concave depth D5 (being about 1 μ m) of the contraposition that is made of the recess 81a of n type GaAs substrate 81 with the projecting height H4 (being about 400nm) of protuberance greatly.

Here, in the 5th execution mode, shown in Figure 72, bluish violet color laser element 170 and red laser element 180 with the contraposition that will constitute by protrusion 8 with protuberance embed contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess along Z direction integrated (stacked).In addition, bluish violet color laser element 170 and infrared laser element 190 with the contraposition that will constitute by the protuberance 71a of n type GaN substrate 71 with protuberance embed contraposition that the recess 81a by n type GaAs substrate 81 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 94 of the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 170, red laser element 180 and infrared laser element 190 is configured on the same line along the stacked direction (the Z direction of Figure 72) of semiconductor layer.

In addition, because the contraposition of red laser element 180 is bigger with the projecting height H1 (being about 153nm) of protuberance than the contraposition of bluish violet color laser element 170 with concave depth D3 (being about 1 μ m), thus the contraposition of bluish violet color laser element 170 with the contraposition of the top and red laser element 180 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 170 with the contraposition of the zone beyond the protuberance and red laser element 180 with recess zone in addition between every greatly.In addition, because the contraposition of infrared laser element 190 is bigger with the projecting height H4 (being about 400nm) of protuberance than the contraposition of bluish violet color laser element 170 with concave depth D5 (being about 1 μ m), thus the contraposition of bluish violet color laser element 170 with the contraposition of the top and infrared laser element 190 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 170 with the contraposition of the zone beyond the protuberance and infrared laser element 190 with recess zone in addition between every greatly.

In addition, the contraposition of bluish violet color laser element 170 engages via the soldering-tin layer 175 that Au-Sn constitutes with recess with the contraposition of red laser element 180 with protuberance.In addition, the contraposition of bluish violet color laser element 170 engages via the soldering-tin layer 195 that Au-Sn constitutes with recess with the contraposition of infrared laser element 190 with protuberance.In addition, soldering- tin layer 175 and 195 is examples of ' knitting layer ' of the present invention.In addition, the p lateral electrode 10 of bluish violet color laser element 170 is electrically connected on the taking-up electrode 69 through the n of red laser element 180 lateral electrode 64 and soldering-tin layer 175.In addition, the n lateral electrode 72 of bluish violet color laser element 170 is electrically connected on the taking-up electrode 99 through the n of infrared laser element 190 lateral electrode 92 and soldering-tin layer 195.

In the 5th execution mode, as mentioned above, use in the recess with the contraposition of the recess 61a formation of the n type GaAs substrate 61 of protuberance embedding red laser element 180 by the contraposition that the protrusion 8 with bluish violet color laser element 170 constitutes, and, the contraposition that the protuberance 71a of the n type GaN substrate 71 of bluish violet color laser element 170 is constituted embeds contraposition that the recess 81a of the n type GaAs substrate 81 of infrared laser element 190 constitutes with in the recess with protuberance, utilize this contraposition the chimeric of protuberance and recess, can suppress the bluish violet color laser element 170 of fitting, bluish violet color laser element 170 when red laser element 180 and infrared laser element 190, red laser element 180 and infrared laser element 190 be the dislocation on (directions X of Figure 72) in the horizontal direction.Thus, owing to can suppress the situation of optical axis along continuous straight runs (directions X of Figure 72) dislocation that bluish violet color laser element 170, red laser element 180 and infrared laser element 190 penetrate light separately, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, because bluish violet color laser element 170, red laser element 180 and infrared laser element 190 in the time of can suppressing to fit bluish violet color laser element 170, red laser element 180 and infrared laser element 190 be the dislocation on (directions X of Figure 72) in the horizontal direction, so can make riving property raising when riving simultaneously after applying bluish violet color laser element 170, red laser element 180 and the infrared laser element 190.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 93 ejaculations.

In addition, in the 5th execution mode, by light-emitting zone 13 with bluish violet color laser element 170, the light-emitting zone 57 of red laser element 180 and the light-emitting zone 94 of infrared laser element 190 are configured on the same line of stacked direction (the Z direction of Figure 72) of semiconductor layer, light-emitting zone 13 with bluish violet color laser element 170, the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 72) and horizontal direction (directions X of Figure 72)) in the position of the light-emitting zone 57 of red laser element 180 and the light-emitting zone 94 of infrared laser element 190 is compared, and can reduce light-emitting zone 13,57 and 94 separately location intervals.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulating optical axis so that the light that penetrates one of from light-emitting zone 13,57 and 94 incides under the situation in the regulation zone of optical system, can suppress to incide situation the zone in the regulation zone of departing from optical system greatly from the light of other two ejaculations of light-emitting zone 13,57 and 94.Consequently, become easier because penetrate light with respect to the optical axis adjustment of optical system, so can further reduce the cost of optical axis adjustment cost.

In addition, other effect of the 5th execution mode is the same with above-mentioned the 1st execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 5th execution mode is described with reference to Figure 72～Figure 89.

At first, as the manufacture process of bluish violet color laser element 170, the same with the process of the 4th execution mode shown in Figure 66～Figure 69.

In addition, as the manufacture process of red laser element 180, the same with the process of the 3rd execution mode shown in Figure 53～Figure 61.But in the 5th execution mode, the length of the resonator direction of the bluish violet color laser device substrate before the length that forms the resonator direction of the red laser device substrate before element separates is separated than element is little.

Below, when forming the infrared laser element 190 of the 5th execution mode, at first shown in Figure 74, use mocvd method, on n type GaAs substrate 81, make to have after the n type resilient coating that constitutes by n type GaAs 82 growths that are about 500nm thickness, on n type resilient coating 82, make to have n type covering 83 growths that constitute by n type AlGaAs that are about 1.5 μ m thickness.Afterwards, on n type covering 83, make to have active layer 84 growths that are about 80nm thickness.In addition, when making active layer 84 growths, make a plurality of trap layers (not shown) that constitute by unadulterated AlGaAs and a plurality of barrier layers (not shown) intergrowth that constitutes by unadulterated AlGaAs.Thus, on n type covering 83, form the active layer 84 of MQW structure with a plurality of trap layers of interaction cascading and a plurality of barrier layers.

Afterwards, on active layer 84, make the p type that constitutes by p type AlGaAs the 1st covering 85 successively and have p type the 2nd covering 86 growths that constitute by p type AlGaAs that are about 800nm thickness with about 150nm thickness.Then, on p type the 2nd covering 86, make the p type cap rock that constitutes by p type GaAs 87 growths with about 600nm thickness.

Afterwards, shown in Figure 75, use sputtering method, vacuum vapour deposition or electron beam evaporation plating method, on p type cap rock 87, formation has the SiO that is about 240nm thickness ₂Film 95.Afterwards, at SiO ₂In the zone on the film 95, form the resist 96 of band shape (elongate) with about 2 μ m～about 3 μ m width corresponding to protrusion 88 (with reference to Figure 72).

Afterwards, shown in Figure 76, use the wet etch techniques of buffer fluoric acid, with resist 96 as mask, etching SiO ₂Film 95.Afterwards, remove resist 96.

Afterwards, shown in Figure 77, using tartaric acid is that etching solution or phosphoric acid are the wet etch techniques of etching solution, with SiO ₂Film 95 is as mask, above p type cap rock 87, etch into p type the 1st covering 85 above.Thus, the protrusion 88 that be formed on when constituting, has tapered side by p type cap rock 87 and p type the 2nd covering 86.In addition, the top angulation θ 7 of the side of protrusion 88 and active layer 84 (p type the 1st covering 85) is about 60 °, the about 2 μ m of the width of the head portion of protrusion 88～about 3 μ m.In addition, protrusion 88 forms along the band shape (elongate) of extending with the direction of light emergence face 93 quadratures shown in Figure 73.

Afterwards, shown in Figure 78, use mocvd method, with SiO ₂Film 95 is as selecting growth mask, on p type the 1st covering 85, covers forming laterally of protrusion 88 and has the n type electric current barrier layer 89 that is made of n type GaAs that is about 1.4 μ m thickness.Afterwards, remove SiO ₂Film 95.

Afterwards, shown in Figure 79, use mocvd method,, the p type contact layer 90 that is made of p type GaAs with about 1 μ m thickness is generated at n type electric current barrier layer 89 with on above the protrusion 88 (p type cap rock 87).Afterwards, use the electron beam evaporation plating method, in the zone beyond the formations zone of the contact hole 190a (with reference to Figure 72) on p type contact layer 90, when formation has as the function of etching mask, also have a p lateral electrode 91 of about 1 μ m thickness.At this moment, form AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.

Then, shown in Figure 80, utilizing chlorine is the RIE method of gas, and p lateral electrode 91 as mask, is formed the circular contact hole 190a that runs through each layer of semiconductor (90,89 and 85～82) and n type GaAs substrate 81 above p type contact layer 90.This contact hole 190a forms aperture with the n type GaAs substrate 81 sides little tapered inner side surfaces in aperture (tens of μ m) than p lateral electrode 91 sides.

Afterwards, shown in Figure 81, use plasma CVD method, at the medial surface of contact hole 190a with on being positioned at above the p lateral electrode 91 of contact hole 190a near zone, form have about 200nm thickness by SiO ₂The dielectric film 98 that film constitutes.

Afterwards, shown in Figure 82, on corresponding to the regulation zone beyond the zone of contact hole 190a, form resist 100.Afterwards, use the electron beam evaporation plating method, on resist 100 on and dielectric film 98 above and on the medial surface, form taking-up electrode 99 with about 0.3 μ m thickness.At this moment, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, utilize the method for lifting to remove resist 100.Thus, shown in Figure 83, remove unnecessary portions, as taking out electrode 99.

Afterwards, shown in Figure 84, grind the back side of n type GaAs substrate 81, till above protrusion 88, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 81.Afterwards, use plasma CVD method, in the zone in addition, zone corresponding to recess 81a (with reference to Figure 72) on n type GaAs substrate 81 back sides, formation has the SiO that is about 240nm thickness ₂Film 97.

Then, shown in Figure 85, utilizing chlorine is the RIE method of gas, with SiO ₂Film 97 is as mask, the degree of depth from the back etched of n type GaAs substrate 81 to about 1 μ m.Thus, in the rear side of n type GaAs substrate 81, form recess 81a with about 1 μ m degree of depth.At this moment, the recess 81a of n type GaAs substrate 81 forms the width ratio with bottom side and opens side within the little taper of distolateral width.In addition, the distolateral width of opening of the recess 81a of n type GaAs substrate 81 is about 3 μ m.In addition, the surperficial angulation θ 8 of the medial surface of the recess 81a of n type GaAs substrate 81 and active layer 84 (n type GaAs substrate 81) is about 60 °.In addition, the recess 81a of n type GaAs substrate 81 forms band shape (elongate) along protrusion 88 shown in Figure 73.And the recess 81a of n type GaAs substrate 81 constitutes the contraposition recess.Afterwards, remove SiO ₂Film 97.

Afterwards, shown in Figure 71, use the electron beam evaporation plating method, on the back side that comprises recess 81a of n type GaAs substrate 81, form n lateral electrode 92 with being electrically connected with about 0.3 μ m thickness with taking-up electrode 99.At this moment, form AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) successively.Thus, the contraposition that is made of the recess 81a of n type GaAs substrate 81 is about 1 μ m with concave depth (from being positioned at recess 81a with the degree of depth above the n lateral electrode 92 on to the bottom that is positioned at recess 81a above the n lateral electrode 92 of exterior domain) D5.That is, the contraposition that constitutes than the recess 71a by n type GaN substrate 71 with concave depth D5 (being about 1 μ m) of the contraposition that is made of the recess 81a of n type GaAs substrate 81 with the projecting height H4 (being about 400nm) (with reference to Figure 72) of protuberance greatly.

Afterwards, with reference to Figure 87～Figure 89, the joint method of bluish violet color laser element 170, red laser element 180 and infrared laser element 190 is described.At first, shown in Figure 87, on the n of red laser element 180 lateral electrode 64, form the soldering-tin layer 175 that constitutes by Au-Sn.Afterwards, the contraposition that will be made of the protrusion 8 of bluish violet color laser element 170 becomes state towards downside with protuberance, and simultaneously, the contraposition that constitutes by the recess 61a that is embedded into by the n type GaAs substrate 61 of red laser element 180 is carried out contraposition with in the recess.At this moment, Yi Bian utilize contraposition that visual transparent region 111 identifications from Figure 10 and bluish violet color laser element 170 shown in Figure 12 are made of protrusion 8 with protuberance and the contraposition recess that constitutes by the recess 61a of n type GaAs substrate 61, an edge Z direction embedding.Then, the contraposition that will constitute by protrusion 8 embed with protuberance contraposition that the recess 61a by n type GaAs substrate 61 constitutes with the state in the recess under, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 175 that fusion is made of Au-Sn.Afterwards, solidify, shown in Figure 88, utilize soldering-tin layer 175 to engage bluish violet color laser element 170 and red laser element 180 by soldering-tin layer in being cooled to the process of room temperature 175.

At this moment, in the 5th execution mode, the contraposition that can constitute with protuberance and recess 61a by n type GaAs substrate 61 by the contraposition that is made of protrusion 8 suppresses the dislocation on (directions X of Figure 72) in the horizontal direction of bluish violet color laser element 170 and red laser element 180 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 170 and red laser element 180 staggers each other.

Afterwards, shown in Figure 89, on the n of infrared laser element 190 lateral electrode 92, form the soldering-tin layer 195 that constitutes by Au-Sn.Afterwards, the contraposition that will be made of the protuberance 71a of the n type GaN substrate 71 of bluish violet color laser element 170 becomes state towards downside with protuberance, simultaneously, the contraposition that constitutes by the recess 81a that is embedded into by the n type GaAs substrate 81 of infrared laser element 190 is carried out contraposition with in the recess.At this moment, utilize on one side contraposition that visual transparent region 111 identifications from Figure 10 and bluish violet color laser element 170 shown in Figure 12 are made of the protuberance 71a of n type GaN substrate 71 with protuberance and the contraposition recess that constitutes by the recess 81a of n type GaAs substrate 81, an edge Z direction embedding.Then, the contraposition that will constitute by the protuberance 71a of n type GaN substrate 71 embed with protuberance contraposition that the recess 81a by n type GaAs substrate 81 constitutes with the state in the recess under, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 195 that fusion is made of Au-Sn.Afterwards, solidify, utilize soldering-tin layer 195 to engage bluish violet color laser element 170 and infrared laser element 190 by soldering-tin layer in being cooled to the process of room temperature 195.

At this moment, in the 5th execution mode, can utilize contraposition that contraposition that the protuberance 71a by n type GaN substrate 71 constitutes constitutes with protuberance and recess 81a by n type GaAs substrate 81 to suppress the dislocation on (directions X of Figure 72) in the horizontal direction of bluish violet color laser element 170 and infrared laser element 190 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 170 and infrared laser element 190 staggers each other.

Afterwards, form light emergence face 93 (with reference to Figure 73) afterwards, be separated into each element at the bluish violet color laser element 170 that is engaged with each other by riving simultaneously, red laser element 180 and infrared laser element 190.At last, shown in Figure 72, by in the p of red laser element 180 lateral electrode 63 and take out on the surface of electrode 69 and the p lateral electrode 91 of infrared laser element 190 and take out bond line 122 on the surface of electrode 99, form the integrated semiconductor laser device of the 5th execution mode.

(the 6th execution mode)

On the same line with reference to the stacked direction (Z direction) that Figure 90 illustrates in the 6th execution mode,, contraposition different with above-mentioned the 1st～the 5th execution mode is not configured in semiconductor layer with protuberance and recess and light-emitting zone, along continuous straight runs (directions X) predetermined distance situation about disposing at interval.

In the 6th execution mode, shown in Figure 90, have along Z direction stacked (integrated) and have contraposition with the bluish violet color laser element 200 of protuberance with have the structure of contraposition with the red laser element 210 of recess.In addition, bluish violet color laser element 200 and red laser element 210 are respectively examples of ' the 1st semiconductor Laser device ' of the present invention and ' the 2nd semiconductor Laser device '.

The structure of the bluish violet color laser element 200 of the 6th execution mode at first, is described.In the bluish violet color laser element 200 of the 6th execution mode, shown in Figure 90, in the zone in addition, zone corresponding to protrusion 8 of n type GaN substrate 71 rear side, form protuberance 71c with about 400nm projecting height.The width tapered side littler that the protuberance 71c of this n type GaN substrate 71 has top ends than the width of root.In addition, the top angulation θ 9 of the side of the protuberance 71c of n type GaN substrate 71 and active layer 3 is about 80 °.In addition, the width of the head portion of the protuberance 71c of n type GaN substrate 71 is about 2 μ m.In addition, the protuberance 71c of n type GaN substrate 71 forms band shape (elongate) along protrusion 8.And the protuberance 71c of n type GaAs substrate 71 constitutes the contraposition protuberance.

Below, the structure of the red laser element 210 of the 6th execution mode is described.In the red laser element 210 of the 6th execution mode, shown in Figure 90, the surface of bluish violet color laser element 200 sides of n type GaAs substrate 61 corresponding to the zone beyond the zone of protrusion 54 in, form recess 61b with about 1 μ m degree of depth.The recess 61b of this n type GaAs substrate 61 has the width of bottom side than the open distolateral little tapered inner side surfaces of width (about 3 μ m).In addition, the surperficial angulation θ 10 of side and active layer 24 is about 60 ° within the recess 61b of n type GaAs substrate 61.In addition, the recess 61b of n type GaAs substrate 61 forms band shape (elongate) along protrusion 54.And the recess 61b of n type GaAs substrate 61 constitutes the contraposition recess.

Here, in the 6th execution mode, shown in Figure 90, bluish violet color laser element 200 and red laser element 210 with the contraposition that will constitute by the protuberance 71c of n type GaN substrate 71 with protuberance embed contraposition that the recess 61b by n type GaAs substrate 61 constitutes with the state in the recess along Z direction integrated (stacked).In addition, the light-emitting zone 57 of the light-emitting zone 13 of bluish violet color laser element 200 and red laser element 210 is configured on the same line along the stacked direction (the Z direction of Figure 90) of semiconductor layer.In addition, the contraposition of bluish violet color laser element 200 engages via the soldering-tin layer 205 that Au-Sn constitutes with recess with the contraposition of red laser element 210 with protuberance.In addition, soldering-tin layer 205 is examples of ' knitting layer ' of the present invention.

In addition, other structure of the 6th execution mode is the same with above-mentioned the 4th execution mode.

In the 6th execution mode, as mentioned above, the contraposition that constitutes by the protuberance 71c with the n type GaN substrate 71 of bluish violet color laser element 200 embeds contraposition that the recess 61b of the n type GaAs substrate 61 of red laser element 210 constitutes with in the recess with protuberance, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 200 in the time of can suppressing to fit bluish violet color laser element 200 and red laser element 210 and red laser element 210 be the dislocation on (directions X of Figure 90) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 200 and situation from optical axis along continuous straight runs (directions X of Figure 90) dislocation of the ejaculation light of red laser element 210, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 200 when bluish violet color laser element 200 is with red laser element 210 because can suppress to fit and red laser element 210 be the dislocation on (directions X of Figure 90) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 200 and red laser element 210 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 200 being rived simultaneously afterwards with red laser element 210.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) ejaculation.

In addition, other effect of the 6th execution mode is the same with above-mentioned the 1st execution mode.

Below, as the manufacture process of the 6th execution mode, the same with the manufacture process of above-mentioned the 4th execution mode.But, in the 6th execution mode, when the rear side at n type GaN substrate 71 forms protuberance 71b, form on the same line of the protuberance 71b of n type GaN substrate 71 and the stacked direction that light-emitting zone 13 is not configured in semiconductor layer.In addition, when the rear side of n type GaAs substrate 61 forms recess 61b, form on the same line of the recess 61b of n type GaAs substrate 61 and the stacked direction that light-emitting zone 57 is not configured in semiconductor layer.

(the 7th execution mode)

With reference to Figure 91 and Figure 92 illustrate in the 7th execution mode, situation different with above-mentioned the 1st～the 6th execution mode, configuration dielectric film between two semiconductor Laser devices that constitute integrated semiconductor laser device.

The integrated semiconductor laser device of the 7th execution mode has along Z direction stacked (integrated) and has contraposition with the bluish violet color laser element 220 of protuberance with have the structure of contraposition with the red laser element 240 of recess shown in Figure 92.In addition, bluish violet color laser element 220 and red laser element 240 are respectively examples of ' the 1st semiconductor Laser device ' of the present invention and ' the 2nd semiconductor Laser device '.

The structure of the bluish violet color laser element 220 of the 7th execution mode at first, is described.In the bluish violet color laser element 220 of the 7th execution mode, shown in Figure 92, on n type GaN substrate 221, form the n type covering 222 that constitutes by n type AlGaN with about 2.5 μ m thickness.On n type covering 222, form active layer 223 with about 70nm thickness.This active layer 223 has a plurality of trap layers (not shown) that interaction cascading is made of unadulterated InGaN and the MQW structure on a plurality of barrier layers (not shown) of being made of unadulterated InGaN.On active layer 223, form the light guide layer 224 that constitutes by unadulterated InGaN with about 80nm thickness.On light guide layer 224, form the cap rock 225 that constitutes by unadulterated AlGaN with about 20nm thickness.

On cap rock 225, form the p type covering 226 that constitutes by p type AlGaN of the par have beyond protuberance and the protuberance.The flat thicknesses of this p type covering 226 is about 50nm, and the height of protuberance above the par is about 350nm.On the protuberance of p type covering 226, form the p type contact layer 227 that constitutes by p type InGaN with about 3nm thickness.Protuberance by this p type contact layer 227 and p type covering 226 constitutes protrusion 228.

Here, in the 7th execution mode, protrusion 228 has the shape the same with the protrusion 8 of above-mentioned the 1st execution mode.That is width than the width of the root side little tapered side of protrusion 228, with top ends side.In addition, the side of protrusion 228 and the top angulation of active layer 223 are values (be about 70 °) identical with the top angulation θ 1 of the side of the protrusion 8 of above-mentioned the 1st execution mode and active layer 3.In addition, the width of the top ends of protrusion 228 is about 1.5 μ m.In addition, protrusion 228 forms along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 232 quadratures shown in Figure 91.Then, protrusion 228 constitutes the protuberance that contraposition is used.In addition, shown in Figure 92, the active layer 223 of protrusion 228 belows and the peripheral part of active layer 223 constitute the light-emitting zone 223a of bluish violet color laser element 220.In addition, protrusion 228 is examples of ' protuberance ' of the present invention and ' the 1st protrusion '.In addition, light-emitting zone 223a is an example of ' the 1st light-emitting zone ' of the present invention.

In addition, form have about 200nm thickness by SiO ₂The electric current barrier layer 229 that film constitutes is above the par of the side that covers protrusion 228 and p type covering 226.On electric current barrier layer 229, with the top p lateral electrode 230 that forms contiguously of protrusion 228 (p type contact layer 227).This p lateral electrode 230 is by having the Pd layer (not shown) of about 100nm thickness from n type GaN substrate 221 sides, order and having Au layer (not shown) formation of about 1 μ m thickness.In addition, p lateral electrode 230 is examples of ' the 1st electrode ' of the present invention.Thus, the contraposition that constitutes by protrusion 228 with the projecting height of protuberance (the p lateral electrode 230 on above the par that is positioned at p type covering 226 above to be positioned at protrusion 228 above on p lateral electrode 230 above height) for the contraposition that constitutes by protrusion 8 of above-mentioned the 1st execution mode with the identical value of the projecting height H1 of protuberance (being about 153nm).

In addition, on the back side of n type GaN substrate 221, form n lateral electrode 231.This n lateral electrode 231 by the Al layer (not shown) that has about 6nm thickness from n type GaN substrate 221 sides, order, have the Pd layer (not shown) of about 10nm thickness and have Au layer (not shown) formation of about 300nm thickness.

Below, the structure of the red laser element 240 of the 7th execution mode is described.In addition, protrusion 249 sides in the red laser element 240 of Figure 92 are towards the below.In the red laser element 240 of the 7th execution mode, shown in Figure 92, on the surface of bluish violet color laser element 220 sides of n type GaAs substrate 241, form the n type resilient coating 242 that constitutes by n type GaInP with about 300nm thickness.On the surface of bluish violet color laser element 220 sides of n type resilient coating 242, form the n type covering 243 that constitutes by n type AlGaInP with about 2 μ m thickness.On the surface of bluish violet color laser element 220 sides of n type covering 243, form active layer 244 with about 60nm thickness.This active layer 244 has the MQW structure of interaction cascading by unadulterated GaInP a plurality of trap layers (not shown) that constitute and a plurality of barrier layers (not shown) that are made of unadulterated AlGaInP.

On the surface of bluish violet color laser element 220 sides of active layer 244, form p type the 1st covering 245 that constitutes by p type AlGaInP with about 300nm thickness.In the regulation zone on the surface of bluish violet color laser element 220 sides of p type the 1st covering 245, form convex p type the 2nd covering 246 that constitutes by p type AlGaInP of thickness with about 1.2 μ m.On the surface of bluish violet color laser element 220 sides of p type the 2nd covering 246, form the p type intermediate layer 247 that constitutes by p type GaInP with about 100nm thickness.On the surface of bluish violet color laser element 220 sides in p type intermediate layer 247, form the p type contact layer 248 that constitutes by p type GaAs with about 300nm thickness.Constitute protrusion 249 by this p type contact layer 248, p type intermediate layer 247 and p type the 2nd covering 246.

Protrusion 249 has the shape the same with the protrusion 29 of above-mentioned the 1st execution mode.That is, protrusion 249 has the tapered side that width diminishes from root side direction top ends side.In addition, the side of protrusion 249 and the surperficial angulation of active layer 244 are values (be about 60 °) identical with the surperficial angulation θ 2 of the side of the protrusion 29 of above-mentioned the 1st execution mode and active layer 24.In addition, the width of the top ends of protrusion 249 is about 2.7 μ m.In addition, protrusion 249 forms along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 232 quadratures shown in Figure 91.And, shown in Figure 92, constitute the light-emitting zone 244a of red laser element 240 corresponding to the peripheral part of the active layer 244 of the formation position of protrusion 249 and active layer 244.In addition, protrusion 249 is examples of ' the 2nd protrusion ' of the present invention.In addition, light-emitting zone 244a is an example of ' the 2nd light-emitting zone ' of the present invention.

Here, in the 7th execution mode, on the surface of bluish violet color laser element 220 sides of p type the 1st covering 245, cover the n type electric current barrier layer 250 of the big thickness (being about 2 μ m) of height (being about 1.6 μ m) that forming laterally of protrusion 249 have than protrusion 249.This n type electric current barrier layer 250 has the peristome 250a that expose on the surface of bluish violet color laser element 220 sides of protrusion 249.In addition, the peristome 250a of n type electric current barrier layer 250 has the width (width of the top ends of protrusion 249 (being about 2.7 μ m)) of bottom side than the open distolateral little tapered inner side surfaces of width (being about 3 μ m).In addition, side and the surperficial angulation of active layer 244 are identical values (being about 70 °) of surperficial angulation θ 3 of side and active layer 24 within the peristome 30a with the n type electric current barrier layer 30 of above-mentioned the 1st execution mode within the peristome 250a of n type electric current barrier layer 250.In addition, the peristome 250a of n type electric current barrier layer 250 forms the band shape (elongate) of extending along the Y direction along protrusion 249 shown in Figure 91.In addition, shown in Figure 92, n type electric current barrier layer 250 is by being that n type AlInP layer (not shown) and n type GaAs layer (not shown) constitute from n type GaAs substrate 241 sides, order.And the peristome 250a of n type electric current barrier layer 250 constitutes the recess that contraposition is used.In addition, n type electric current barrier layer 250 is examples of ' electric current barrier layer ' of the present invention, and peristome 250a is an example of ' recess ' of the present invention.

In addition, on the surface of bluish violet color laser element 220 sides of protrusion 249 (p type contact layer 248), form and have the p lateral electrode 251 of about 0.3 μ m thickness, extend to the lip-deep regulation zone of bluish violet color laser element 220 sides of n type electric current barrier layer 250 through peristome 250a.This p lateral electrode 251 is by being AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 241 sides, order.In addition, p lateral electrode 251 is examples of ' the 2nd electrode ' of the present invention.Thus, the contraposition that constitutes by the peristome 250a of n type electric current barrier layer 250 with concave depth (from being positioned at corresponding to the surface of bluish violet color laser element 220 sides of the p lateral electrode 251 in the zone beyond the zone of protrusion 249) to the degree of depth that is positioned at corresponding to the surface of bluish violet color laser element 220 sides of the p lateral electrode 251 in the zone of protrusion 249 for the contraposition that constituted with the peristome 30a of the n type electric current barrier layer 30 of above-mentioned the 1st execution mode with the identical value of concave depth D1 (being about 400nm).That is, the same with above-mentioned the 1st execution mode, the contraposition that is made of the peristome 250a of n type electric current barrier layer 250 with concave depth (being about 400nm) than the contraposition that is made of protrusion 228 with the projecting height (being about 153nm) of protuberance greatly.

In addition, in the regulation zone of exposing in the lip-deep p of the covering lateral electrode 251 of bluish violet color laser element 220 sides of n type electric current barrier layer 250, with p lateral electrode 251 predetermined distances at interval, form have about 200nm thickness by SiO ₂The dielectric film 252 that film constitutes.In addition, n type GaAs substrate 241 with surfaces bluish violet color laser element 220 opposition sides on, form and to have the n lateral electrode 253 that is about 1 μ m thickness.This n lateral electrode 253 is that AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) constitute from n type GaAs substrate 241 sides, order.

In addition, in the 7th execution mode, form from n lateral electrode 253 and surfaces bluish violet color laser element 220 opposition sides, run through the circular contact hole 254a of n lateral electrode 253, n type GaAs substrate 241, each layer of semiconductor (242～245 and 250) and dielectric film 252.In addition, with contact hole 254a at interval the formation of predetermined distance ground from n lateral electrode 253 and surfaces bluish violet color laser element 220 opposition sides, run through the circular contact hole 254b of n lateral electrode 253, n type GaAs substrate 241, each layer of semiconductor (242～245 and 250) and p lateral electrode 251.This contact hole 254a and 254b are tens of μ m at the diameter of n lateral electrode 253 sides, and the aperture with p lateral electrode 251 sides is than the little tapered inner side surfaces in aperture of n lateral electrode 253 sides.In addition, contact hole 254a and 254b are respectively examples of ' the 1st contact hole ' of the present invention and ' the 2nd contact hole '.In addition, on the medial surface of contact hole 254a and 254b, be formed extended at both sides along the surface with bluish violet color laser element 220 opposition sides of n lateral electrode 253 have be about 200nm thickness by SiO ₂The dielectric film 255 that film constitutes.The end of this dielectric film 255 is shown in Figure 91, and a part that is configured to the surface of n lateral electrode 252 is exposed.

In addition, in the 7th execution mode, shown in Figure 92, on the dielectric film 255 that is positioned at contact hole 254a, the lip-deep regulation with bluish violet color laser element 220 opposition sides that extends to dielectric film 255 forms the taking-up electrode 256a with about 0.3 μ m thickness regionally.In addition, on the dielectric film 255 that is positioned at contact hole 254b, the lip-deep regulation with bluish violet color laser element 220 opposition sides that extends to dielectric film 255 forms the taking-up electrode 256b that is made of the layer identical with taking out electrode 256a regionally.This taking-up electrode 256a and 256b are by from n type GaAs substrate 241 sides being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation in proper order.In addition, take out electrode 256a and 256b and the of the present invention the ' the 1st take out electrode one example of ' and the ' the 2nd taking-up electrode '.

Below, the bluish violet color laser element 220 of the 7th execution mode and the engagement state of red laser element 240 are described.In the 7th execution mode, on the p of bluish violet color laser element 220 lateral electrode 230, form have about 200nm thickness by SiO ₂The dielectric film 261 that film constitutes.This dielectric film 261 has peristome 261a, and simultaneously, this peristome 261a is configured in the zone corresponding to contact hole 254a of red laser element 240.That is, the zone corresponding to contact hole 254a of the p lateral electrode 230 of bluish violet color laser element 220 becomes the state that dielectric film 261 ground expose that do not cover.

Then, in the 7th execution mode, bluish violet color laser element 220 is forming on the surface of bluish violet color laser element 220 under the state of dielectric film 261 with red laser element 240, embed contraposition that the peristome 250a by n type electric current barrier layer 250 constitutes with in the recess, by the contraposition that will constitute by protrusion 228 with protuberance along Z direction integrated (stacked).In addition, the light-emitting zone 244a of the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240 is configured on the same line along the stacked direction (Z direction) of semiconductor layer.In addition, as mentioned above, because the contraposition of red laser element 240 is bigger with the projecting height (being about 153nm) of protuberance than the contraposition of bluish violet color laser element 220 with concave depth (being about 400nm), thus the contraposition of bluish violet color laser element 220 with the contraposition of the top and red laser element 240 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 220 with the contraposition of the zone beyond the protuberance and red laser element 240 with recess zone in addition between every greatly.

In addition, the contraposition of bluish violet color laser element 220 engages via the soldering-tin layer 262 that Au-Sn constitutes with recess with the contraposition of red laser element 240 with protuberance.This soldering-tin layer 262 is divided into two soldering-tin layer 262a and 262b.A soldering-tin layer 262a is configured in the zone corresponding to peristome 261a of dielectric film 261, simultaneously, contacts with taking-up electrode 256a with the p lateral electrode 230 of bluish violet color laser element 220.Thus, the p lateral electrode 230 of bluish violet color laser element 220 and taking-up electrode 256a are electrically connected through soldering-tin layer 262a.In addition, another soldering-tin layer 262b and soldering-tin layer 262a predetermined distance at interval dispose, and simultaneously, contact with taking-up electrode 256b with the p lateral electrode 251 of red laser element 240.Thus, the p lateral electrode 251 of red laser element 240 and taking-up electrode 256b are electrically connected through soldering-tin layer 262b.

In addition, taking out on electrode 256a and 256b and surfaces bluish violet color laser element 220 opposition sides, respectively bond line (gold thread) 263a and 263b.In addition, expose on the zone end of bond line (gold thread) 263c on n lateral electrode 253 and surfaces bluish violet color laser element 220 opposition sides.In addition, go up the other end of bond line 263c at the secondary mounting panel of the conductivity that engages with n lateral electrode 231 (sub mount) (not shown) of bluish violet color laser element 220.

In the 7th execution mode, as mentioned above, use in the recess with the contraposition of the peristome 250a formation of the n type electric current barrier layer 250 of protuberance embedding red laser element 240 by the contraposition that the protrusion 228 with bluish violet color laser element 220 constitutes, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 220 in the time of can suppressing to fit bluish violet color laser element 220 and red laser element 240 and red laser element 240 be the dislocation on (directions X of Figure 92) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 220 and situation from optical axis along continuous straight runs (directions X of Figure 92) dislocation of the ejaculation light of red laser element 240, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 220 when bluish violet color laser element 220 is with red laser element 240 because can suppress to fit and red laser element 240 be the dislocation on (directions X of Figure 92) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 220 and red laser element 240 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 220 being rived simultaneously afterwards with red laser element 240.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 232 ejaculations.

In addition, in the 7th execution mode, be configured in by light-emitting zone 244a on the same line of stacked direction (the Z direction of Figure 92) of semiconductor layer the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 92) and horizontal direction (directions X of Figure 92)) in the position of the light-emitting zone 244a of the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240, can reduce the location interval of the light-emitting zone 244a of the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulating optical axis so that the light that penetrates from one of the light-emitting zone 223a of bluish violet color laser element 220 and light-emitting zone 244a of red laser element 240 incides under the situation the regulation zone of optical system, can suppress to incide situation the zone in the regulation zone of departing from optical system greatly from the light that light-emitting zone 244a the opposing party of the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240 penetrates.Consequently, because become easier, so can further reduce the cost of optical axis adjustment cost with respect to the optical axis adjustment of optical system.

In addition, in the 7th execution mode, by between the p lateral electrode 251 of the p of bluish violet color laser element 220 lateral electrode 230 and red laser element 240, forming dielectric film 261, even if the p lateral electrode 230 of bluish violet color laser element 220 is relative to ground stacked (integrated) bluish violet color laser element 220 and red laser element 240 with the p lateral electrode 251 of red laser element 240, also can come the p lateral electrode 230 of electric insulation bluish violet color laser element 220 and the p lateral electrode 251 of red laser element 240 by dielectric film 261.Thus, the n lateral electrode 231 of bluish violet color laser element 220 and the n lateral electrode 253 of red laser element 240 can be connected on the common negative electrode.Therefore, owing to can apply different voltage respectively, so the degree of freedom to the method for supplying power to of the light-emitting zone 244a of the light-emitting zone 223a of bluish violet color laser element 220 and red laser element 240 is improved to the p lateral electrode 251 of the p of bluish violet color laser element 220 lateral electrode 230 and red laser element 240.In addition, take out electrode 256a and take out electrode 256b by connecting by metal wire, on the n of red laser element 240 lateral electrode 253 and the secondary mounting panel of conductivity,, the p lateral electrode 230 of bluish violet color laser element 220 and the p lateral electrode 251 of red laser element 240 can be connected on the common anode respectively separately in conjunction with metal wire insulated from each other.At this moment, can apply voltage arbitrarily respectively to the n lateral electrode 253 of the n of bluish violet color laser element 220 lateral electrode 231 and red laser element 240.And, in the n lateral electrode 253 of p lateral electrode 230 that can be electrically connected bluish violet color laser element 220 and red laser element 240, can be electrically connected the n lateral electrode 231 of bluish violet color laser element 220 and the p lateral electrode 251 of red laser element 240.Consequently, realize the variation of the using method of integrated semiconductor laser device.

In addition, in the 7th execution mode, in red laser element 240, form in the contact hole 254a, in the zone corresponding to peristome 254a of dielectric film 261, the peristome 261a that the part of the p lateral electrode 230 of formation bluish violet color laser element 220 is exposed, thus, even if between the p lateral electrode 251 of the p of bluish violet color laser element 220 lateral electrode 230 and red laser element 240, form dielectric film 261, also can apply voltage from the outside to the p of bluish violet color laser element 220 lateral electrode 230 through the peristome 261a of contact hole 254a and dielectric film 261.

In addition, in the 7th execution mode, by in red laser element 240, forming contact hole 254b with contact hole 254a interval predetermined distance, through contact hole 254a when the p of bluish violet color laser element 220 lateral electrode 230 applies voltage, apply voltage through contact hole 254b to the p of red laser element 240 lateral electrode 251, thus, can be easily apply different voltage respectively to the p lateral electrode 251 of the p of bluish violet color laser element 220 lateral electrode 230 and red laser element 240.

In addition, in the 7th execution mode, take out electrode 256a and 256b by on the medial surface of contact hole 254a and 254b, forming respectively, can easily utilize taking-up electrode 256a and 256b to apply voltage from the outside to the p lateral electrode 251 of the p of bluish violet color laser element 220 lateral electrode 230 and red laser element 240.

In addition, in the 7th execution mode, contraposition by engaging bluish violet color laser element 220 through soldering-tin layer 262 can easily utilize soldering-tin layer 262 to engage the contraposition recess of the contraposition of bluish violet color laser element 220 with protuberance and red laser element 240 with the contraposition recess of protuberance and red laser element 240.

In addition, other effect of the 7th execution mode is the same with above-mentioned the 1st execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 7th execution mode is described with reference to Figure 91～Figure 105.

When forming bluish violet color laser element 220, at first shown in Figure 93, use the same process of process with the 1st execution mode of Fig. 3～shown in Figure 11, after being formed up to p lateral electrode 230, grind the back side of n type GaN substrate 221, be about 150 μ m up to thickness above protrusion 228 to the back side of n type GaN substrate 221.

Afterwards, shown in Figure 94, use plasma CVD method, on p lateral electrode 230, form the dielectric film 261 that constitutes by SiO2 film 261 that has peristome 261a, has about 200nm thickness simultaneously.When forming this dielectric film 261, peristome 261a is configured in corresponding in the regulation zone beyond the zone of protrusion 228.

Afterwards, shown in Figure 95, use the electron beam evaporation plating method, on the back side of n type GaN substrate 221, form n lateral electrode 231.When forming this n lateral electrode 231, form successively and have the Al layer (not shown) that is about 6nm thickness, have the Pd layer (not shown) that is about 10nm thickness and have the Au layer (not shown) that is about 300nm thickness.So, the surface of formation p lateral electrode 230 is had the bluish violet color laser element 220 of dielectric film 261 coverings of peristome 261a.

Afterwards, shown in Figure 96, form when constituting, comprise the soldering-tin layer 262a that is divided into two and the soldering-tin layer 262 of 262b by Au-Sn.Particularly, be arranged in dielectric film 261 corresponding to the p lateral electrode 230 in the zone of peristome 261a above on form a soldering-tin layer 262a.In addition, cover at least dielectric film 261 corresponding to the zone ground of protrusion 228 and soldering-tin layer 262a at interval predetermined distance form another soldering-tin layer 262b.

Afterwards, when forming red laser element 240, at first shown in Figure 97, use the same process of process with the 1st execution mode of Figure 14～shown in Figure 20, be formed up to n type electric current barrier layer 250 with peristome 250a.

Afterwards, shown in Figure 98, use the electron beam evaporation plating method, on protrusion 249 (p type contact layer 248), the regulation on above peristome 250a extends to n type electric current barrier layer 250 forms regionally has the p lateral electrode 251 that is about 0.3 μ m thickness.When forming this p lateral electrode 251, form AuZn layer (not shown) and Pt layer (not shown) successively.Afterwards, grind the back side of n type GaAs substrate 241, till above protrusion 249, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 241.

Afterwards, shown in Figure 99, use the electron beam evaporation plating method, on the zone beyond the formations zone of contact hole 254a on n type GaAs substrate 241 back sides and 254b (with reference to Figure 92), when formation has as the function of etching mask, also have a n lateral electrode 253 that is about 1 μ m thickness.When forming this n lateral electrode 253, form AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) successively.

Then, shown in Figure 100, use plasma CVD method, on n type electric current barrier layer 250 do not covered by p lateral electrode 251 and in the regulation zone of exposing, with p lateral electrode 251 at interval predetermined distances form have about 200nm thickness by SiO ₂The dielectric film 252 that film constitutes.

Afterwards, shown in Figure 101, utilizing chlorine is the RIE method of gas, n lateral electrode 253 as mask, from the back side of n type GaAs substrate 241, is removed n type GaAs substrate 241, each layer of semiconductor (242～245 and 250) and dielectric film 252, thus, form circular contact hole 254a.Simultaneously, with the contact hole 254a zone of predetermined distance at interval, remove n type GaAs substrate 241, each layer of semiconductor (242～245 and 250) and p lateral electrode 251, form circular contact hole 254b thus.

Afterwards, shown in Figure 102, use plasma CVD method, on the medial surface of contact hole 254a and 254b, be formed extended at both sides along the surface with n type GaAs substrate 241 opposition sides of n lateral electrode 253 have about 200nm thickness by SiO ₂The dielectric film 255 that film constitutes.When forming this dielectric film 255, shown in Figure 91, the end of configuration dielectric film 255 is exposed the part on the surface of n lateral electrode 253.

Afterwards, shown in Figure 103, on the zone beyond taking-up electrode 256a on n lateral electrode 253 and surfaces n type GaAs substrate 241 opposition sides and the formation zone of 256b (with reference to Figure 92), form resist 257.Afterwards, use the electron beam evaporation plating method, form metal level 256, cover medial surface and resist 257 and dielectric film 255 and surfaces n type GaAs substrate 241 opposition sides of contact hole 254a and 254b with about 0.3 μ m thickness.When forming metal level 256, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, remove resist 257.At this moment, the lip-deep metal level 256 with n type GaAs substrate 241 opposition sides that is formed at resist 257 is also removed simultaneously.Thus, shown in Figure 104, on the dielectric film 255 that is positioned at contact hole 254a, form the taking-up electrode 256a extend to the regulation zone on dielectric film 255 and surfaces n type GaAs substrate 241 opposition sides.In addition, on the dielectric film 255 that is positioned at contact hole 254b, the taking-up electrode 256b that constitutes when forming the regulation zone extend on dielectric film 255 and surfaces n type GaAs substrate 241 opposition sides, by the layer identical with taking out electrode 256a.Thus, form red laser element 240.

Afterwards, with reference to Figure 105, the joint method of bluish violet color laser element 220 and red laser element 240 is described.

At first, shown in Figure 105, the contraposition that will be made of the peristome 250a of the n type electric current barrier layer 250 of red laser element 240 becomes state towards downside with recess, simultaneously, the contraposition that constitutes by the protrusion 228 that is embedded into by bluish violet color laser element 220 is carried out contraposition with in the protuberance.Then, under the state in the contraposition usefulness protuberance that the contraposition that will be made of the peristome 250a of n type electric current barrier layer 250 is made of protrusion 228 with the recess embedding, by under about 280 ℃ temperature conditions, heat-treating the soldering-tin layer 262 that fusion is made of Au-Sn.Afterwards, solidify,, utilize soldering-tin layer 262 to engage bluish violet color laser element 220 and red laser element 240 through dielectric film 261 by soldering-tin layer in being cooled to the process of room temperature 262.In addition, the taking-up electrode 256a of the soldering-tin layer 262a contact red laser element 240 of the p lateral electrode 230 of contact bluish violet color laser element 220.In addition, the p lateral electrode 251 of soldering-tin layer 262b contact red laser element 240 and taking-up electrode 256b.

At this moment, in the 7th execution mode, the contraposition that can constitute with protuberance and peristome 250a by n type electric current barrier layer 250 by the contraposition that is made of protrusion 228 suppresses the dislocation on (directions X of Figure 91 and Figure 92) in the horizontal direction of bluish violet color laser element 220 and red laser element 240 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 220 and red laser element 240 staggers each other.

Afterwards, form light emergence face 232 (with reference to Figure 91) afterwards at the bluish violet color laser element 220 that is engaged with each other by riving simultaneously with red laser element 240, be separated into each element, simultaneously, go up the n lateral electrode 231 that engages bluish violet color laser element 220 at the secondary mounting panel of conductivity (not shown).At last, as 91 and Figure 92 shown in, taking out on electrode 256a and 256b and surfaces bluish violet color laser element 220 opposition sides, respectively bond line (gold thread) 263a and 263b.In addition, on the zone of exposing on the surface with bluish violet color laser element 220 opposition sides of n lateral electrode 253, the end of bond line (gold thread) 263c simultaneously, is combined in the secondary mounting panel (not shown) of conductivity with the other end of metal wire 263c.Thus, form the integrated semiconductor laser device of the 7th execution mode.

(the 8th execution mode)

With reference to Figure 106 and Figure 107 illustrate in the 8th execution mode, situation different with above-mentioned the 7th execution mode, configuration dielectric film between bluish violet color laser element and monolithic type laser diode.

The integrated semiconductor laser device of the 8th execution mode has along Z direction stacked (integrated) and has contraposition with the bluish violet color laser element 220 of protuberance with have the structure of contraposition with the monolithic type laser diode 270 of recess shown in Figure 107.In addition, bluish violet color laser element 220 has the structure the same with the bluish violet color laser element 220 of above-mentioned the 7th execution mode.Monolithic type laser diode 270 is examples of ' the 2nd semiconductor Laser device ' of the present invention.

The monolithic type laser diode 270 of the 8th execution mode has red laser region 270a that forms the red laser element layer and the infrared laser region 270b that forms the infrared laser element layer.In addition, red laser region 270a separates with the separated ditch 270c of infrared laser region 270b.In addition, protrusion 279 in the monolithic type laser diode 270 of Figure 107 and 299 sides are towards the below.

As concrete structure, in red laser region 270a, in the regulation zone on the surface of bluish violet color laser element 220 sides of n type GaAs substrate 271, form the n type resilient coating 272 that constitutes by n type GaInP with about 300nm thickness.On the surface of bluish violet color laser element 220 sides of n type resilient coating 272, form the n type covering 273 that constitutes by n type AlGaInP with about 2 μ m thickness.On the surface of bluish violet color laser element 220 sides of n type covering 273, form active layer 274 with about 60nm thickness.This active layer 274 has a plurality of trap layers (not shown) that interaction cascading is made of unadulterated GaInP and the MQW structure on a plurality of barrier layers (not shown) of being made of unadulterated AlGaInP.

On the surface of bluish violet color laser element 220 sides of active layer 274, form p type the 1st covering 275 that constitutes by p type AlGaInP with about 300nm thickness.In the regulation zone on the surface of bluish violet color laser element 220 sides of p type the 1st covering 275, form convex p type the 2nd covering 276 that constitutes by p type AlGaInP with about 1.2 μ m thickness.On the surface of bluish violet color laser element 220 sides of p type the 2nd covering 276, form the p type intermediate layer 277 that constitutes by p type GaInP with about 100nm thickness.On the surface of bluish violet color laser element 220 sides in p type intermediate layer 277, form the p type contact layer 278 that constitutes by p type GaAs with about 300nm thickness.Constitute protrusion 279 by this p type contact layer 278, p type intermediate layer 277 and p type the 2nd covering 276.This protrusion 279 has the shape the same with the protrusion 249 of above-mentioned the 7th execution mode.In addition, constitute the light-emitting zone 274a that sends red laser corresponding to the active layer 274 of the formation position of protrusion 279 and the peripheral part of active layer 274.In addition, light-emitting zone 274a is an example of ' the 3rd light-emitting zone ' of the present invention.

In addition, on the surface of bluish violet color laser element 220 sides of p type the 1st covering 275, cover the n type electric current barrier layer 280a of the big thickness (being about 2 μ m) of height (being about 1.6 μ m) that forming laterally of protrusion 279 have than protrusion 279.This n type electric current barrier layer 280a has the peristome 280b that expose on the surface of bluish violet color laser element 220 sides of protrusion 279.In addition, the peristome 280b of n type electric current barrier layer 280a has the same shape of peristome 250a with the n type electric current barrier layer 250 of above-mentioned the 7th execution mode.In addition, n type electric current barrier layer 280a is by being that n type AlInP layer (not shown) and n type GaAs layer (not shown) constitute from n type GaAs substrate 271 sides, order.

In addition, on the surface of bluish violet color laser element 220 sides of protrusion 279 (p type contact layer 278), formation has the p lateral electrode 281a of about 0.3 μ m thickness, extends to the lip-deep regulation zone of bluish violet color laser element 220 sides of n type electric current barrier layer 280a through peristome 280b.This p lateral electrode 281a is by being that AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) constitute from n type GaAs substrate 271 sides, order.In addition, p lateral electrode 281a is an example of ' the 3rd electrode ' of the present invention.In addition, n type GaAs substrate 271 with surfaces bluish violet color laser element 220 opposition sides on, be formed on the common n lateral electrode 282 in two zones of red laser region 270a and infrared laser region 270b.This n lateral electrode 282 has the thickness of about 1 μ m, simultaneously, and by being AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 271 sides, order.

Here, in the 8th execution mode, in red laser region 270a, form from n lateral electrode 282 and surfaces bluish violet color laser element 220 opposition sides, run through the circular contact hole 283 of n lateral electrode 282, n type GaAs substrate 271, each layer of semiconductor (272～275 and 280a) and p lateral electrode 281a.In addition, this contact hole 283 is tens of μ m at the diameter of n lateral electrode 282 sides, has the aperture little tapered inner side surfaces of the aperture of p lateral electrode 281a side than n lateral electrode 282 sides.In addition, contact hole 283 is examples of ' the 3rd contact hole ' of the present invention.In addition, on the medial surface of contact hole 283, be formed extended at both sides along the surface with bluish violet color laser element 220 opposition sides of n lateral electrode 282 and have the dielectric film 284a that constitutes by the SiO2 film that is about 200nm thickness.The end of this dielectric film 284a is shown in Figure 106, and a part that is configured to the surface of n lateral electrode 282 is exposed.

In addition, in the 8th execution mode, shown in Figure 107, be positioned on the dielectric film 284a of contact hole 283, forming taking-up electrode 285a, extending to dielectric film 284a and lip-deep regulation zones bluish violet color laser element 220 opposition sides with about 0.3 μ m.This taking-up electrode 285a is by being Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) formation from n type GaAs substrate 271 sides, order.In addition, take out electrode 285a and the of the present invention the ' the 3rd take out electrode ' an example.

In addition, in infrared laser region 270b, in the regulation zone on the surface of bluish violet color laser element 220 sides of n type GaAs substrate 271, form the n type resilient coating 292 that constitutes by n type GaAs with about 300nm thickness.On the surface of bluish violet color laser element 220 sides of n type resilient coating 292, form the n type covering 293 that constitutes by n type AlGaAs with about 2 μ m thickness.On the surface of bluish violet color laser element 220 sides of n type covering 293, form active layer 294 with about 70nm thickness.This active layer 294 has a plurality of trap layers (not shown) that interaction cascading is made of unadulterated AlGaAs and the MQW structure on a plurality of barrier layers (not shown) of being made of unadulterated AlGaAs.

On the surface of bluish violet color laser element 220 sides of active layer 294, form p type the 1st covering 295 that constitutes by p type AlGaAs with about 300nm thickness.In the regulation zone on the surface of bluish violet color laser element 220 sides of p type the 1st covering 295, form convex p type the 2nd covering 296 that constitutes by p type AlGaAs with about 1.2 μ m thickness.On the surface of bluish violet color laser element 220 sides of p type the 2nd covering 296, form the p type cap rock 297 that constitutes by p type GaAs with about 100nm thickness.On the surface of bluish violet color laser element 220 sides of p type cap rock 297, form the p type contact layer 298 that constitutes by p type GaAs with about 300nm thickness.Constitute protrusion 299 by this p type contact layer 298, p type cap rock 297 and p type the 2nd covering 296.

Protrusion 299 has the tapered side that width diminishes to the top ends side from root.In addition, the surperficial angulation of the side of protrusion 299 and active layer 294 is about 60 °.In addition, the width of the top ends of protrusion 299 is about 2.7 μ m.In addition, protrusion 299 forms along the band shape (elongate) of extending with the direction (Y direction) of light emergence face (splitting surface) 232 quadratures shown in Figure 106.Then, shown in Figure 107, constitute the light-emitting zone 294a that sends infrared laser corresponding to the active layer 294 of the formation position of protrusion 299 and the peripheral part of active layer 294.Protrusion 299 is examples of ' the 2nd protrusion ' of the present invention.In addition, light-emitting zone 294a is an example of ' the 2nd light-emitting zone ' of the present invention.

Here, in the 8th execution mode, on the surface of bluish violet color laser element 220 sides of p type the 1st covering 295, cover the n type electric current barrier layer 280c of the big thickness (being about 2 μ m) of height (being about 1.6 μ m) that forming laterally of protrusion 299 have than protrusion 299.This n type electric current barrier layer 280c has the peristome 280d that expose on the surface of bluish violet color laser element 220 sides of protrusion 299.In addition, the peristome 280d of n type electric current barrier layer 280c has the width (width of the top ends of protrusion 299 (being about 2.7 μ m)) of bottom side than the open distolateral little tapered inner side surfaces of width (being about 3 μ m).In addition, the surperficial angulation of side and active layer 294 is about 70 ° within the peristome 280d of n type electric current barrier layer 280c.In addition, the peristome 280d of n type electric current barrier layer 280c forms the band shape (elongate) of extending along the Y direction along protrusion 299 shown in Figure 106.In addition, n type electric current barrier layer 280c is made of the layer identical with the n type electric current barrier layer 280a of red laser region 270a.And the peristome 280d of n type electric current barrier layer 280c constitutes the recess that contraposition is used.In addition, n type electric current barrier layer 280c is an example of ' electric current barrier layer ' of the present invention, and peristome 280d is an example of ' recess ' of the present invention.

In addition, on the surface of bluish violet color laser element 220 sides of protrusion 299 (p type contact layer 298), form p lateral electrode 281b, extend to the lip-deep regulation zone of bluish violet color laser element 220 sides of n type electric current barrier layer 280c through peristome 280d.This p lateral electrode 281b is made of the layer identical with the p lateral electrode 281a of red laser region 270a.In addition, p lateral electrode 281b is an example of ' the 2nd electrode ' of the present invention.Thus, the contraposition that is made of the peristome 280d of n type electric current barrier layer 280c is about 400nm with concave depth (from being positioned at corresponding to the surface of bluish violet color laser element 220 sides of the p lateral electrode 281b in the zone beyond the zone of protrusion 299 to the degree of depth that is positioned at corresponding to the surface of bluish violet color laser element 220 sides of the p lateral electrode 281b in the zone of protrusion 299).That is, the contraposition that is made of the peristome 280d of n type electric current barrier layer 280c with concave depth (being about 400nm) than the contraposition that is made of protrusion 299 with the projecting height (being about 153nm) of protuberance greatly.

In addition, in the regulation zone of exposing at the lip-deep p of the covering lateral electrode 281b of bluish violet color laser element 220 sides of n type electric current barrier layer 280c, with p lateral electrode 281b predetermined distance at interval, form have about 200nm thickness by SiO ₂The dielectric film 300 that film constitutes.

Here, in the 8th execution mode, in infrared laser region 270b, form from n lateral electrode 282 and surfaces bluish violet color laser element 220 opposition sides, run through the circular contact hole 301a of n lateral electrode 282, n type GaAs substrate 271, each layer of semiconductor (292～295 and 280c) and dielectric film 300.In addition, with contact hole 301a predetermined distance at interval, form from n lateral electrode 282 and surfaces bluish violet color laser element 220 opposition sides, run through the circular contact hole 301b of n lateral electrode 282, n type GaAs substrate 271, each layer of semiconductor (292～295 and 280c) and p lateral electrode 281b.This contact hole 301a and 301b are tens of μ m at the diameter of n lateral electrode 282 sides, have the aperture little tapered inner side surfaces of the aperture of p lateral electrode 281b side than n lateral electrode 282 sides.In addition, contact hole 301a and 301b are respectively examples of ' the 1st contact hole ' of the present invention and ' the 2nd contact hole '.In addition, on the medial surface of contact hole 301a and 301b, be formed extended at both sides dielectric film 284b along the surface with bluish violet color laser element 220 opposition sides of n lateral electrode 282.This dielectric film 284b is made of the layer identical with the dielectric film 284a of red laser region 270a.In addition, the end of dielectric film 284b is shown in Figure 106, and a part that is configured to the surface of n lateral electrode 282 is exposed.

In addition, in the 8th execution mode, shown in Figure 107, be positioned on the dielectric film 284b of contact hole 301a, the lip-deep regulation with bluish violet color laser element 220 opposition sides that extends to dielectric film 284b forms regionally takes out electrode 285b.In addition, be positioned on the dielectric film 284b of contact hole 301b, the lip-deep regulation with bluish violet color laser element 220 opposition sides that extends to dielectric film 284b forms by taking out electrode 285c regionally.This taking-up electrode 285b and 285c are by constituting with the identical layer of electrode 285a of obtaining of red laser region 270a.In addition, take out electrode 285b and 285c and the of the present invention the ' the 1st take out electrode one example of ' and the ' the 2nd taking-up electrode '.

Below, the bluish violet color laser element 220 of the 8th execution mode and the engagement state of monolithic type laser diode 270 are described.In the 8th execution mode, on the p of bluish violet color laser element 220 lateral electrode 230, form have about 200nm thickness by SiO ₂The dielectric film 331 that film constitutes.This dielectric film 331 has peristome 311a, and simultaneously, this peristome 311a is configured in the zone corresponding to contact hole 301a of monolithic type laser diode 270 (infrared laser region 270b).That is, the zone corresponding to contact hole 301a of the p lateral electrode 230 of bluish violet color laser element 220 becomes the state that dielectric film 311 ground expose that do not cover.

In addition, in the 8th execution mode, bluish violet color laser element 220 is forming on the surface of bluish violet color laser element 220 under the state of dielectric film 311 with monolithic type laser diode 270, embed contraposition that the peristome 280d by n type electric current barrier layer 280c constitutes with in the recess, by the contraposition that will constitute by protrusion 228 with protuberance along Z direction integrated (stacked).In addition, the light-emitting zone 294a of the light-emitting zone 223a of bluish violet color laser element 220 and infrared laser element 270b is configured on the same line along the stacked direction (Z direction) of semiconductor layer.In addition, as mentioned above, because the contraposition of monolithic type laser diode 270 is bigger with the projecting height (being about 153nm) of protuberance than the contraposition of bluish violet color laser element 220 with concave depth (being about 400nm), thus the contraposition of bluish violet color laser element 220 with the contraposition of the top and monolithic type laser diode 270 of protuberance with between the bottom surface of recess every, than the contraposition of bluish violet color laser element 220 with the contraposition of the zone beyond the protuberance and monolithic type laser diode 270 with recess zone in addition between every greatly.

In addition, bluish violet color laser element 220 engages via the soldering-tin layer 312 that Au-Sn constitutes with monolithic type laser diode 270.This soldering-tin layer 312 comprises soldering-tin layer 312a and 312b that is arranged in infrared laser region 270b and soldering-tin layer 312c and the 312d that is arranged in red laser region 270a.In infrared laser region 270b, soldering-tin layer 312a is configured in the zone corresponding to peristome 311a of dielectric film 311, simultaneously, contacts with taking-up electrode 285b with the p lateral electrode 230 of bluish violet color laser element 220.Thus, the p lateral electrode 230 of bluish violet color laser element 220 and taking-up electrode 285b are electrically connected through soldering-tin layer 312a.In addition, in infrared laser region 270b, soldering-tin layer 312b and soldering-tin layer 312a predetermined distance at interval dispose, and simultaneously, contact with taking-up electrode 285c with the p lateral electrode 281b of infrared laser region 270b.Thus, the p lateral electrode 281b of infrared laser element 270b and taking-up electrode 285c are electrically connected through soldering-tin layer 312b.In addition, in red laser region 270a, soldering-tin layer 312c and 312d are melting each other, simultaneously, contact with taking-up electrode 285a with the p lateral electrode 281a of red laser region 270a.Thus, the p lateral electrode 281a of red laser region 270a is electrically connected through soldering-tin layer 312c and 312d with taking-up electrode 285a.

In addition, taking out on electrode 285a, 285b and 285c and surfaces bluish violet color laser element 220 opposition sides, respectively bond line (gold thread) 313a, 313b and 313c.In addition, expose on the zone end of bond line (gold thread) 313d on n lateral electrode 282 and surfaces bluish violet color laser element 220 opposition sides.In addition, go up the other end of bond line 313d at the secondary mounting panel of the conductivity that engages with n lateral electrode 231 (not shown) of bluish violet color laser element 220.

In the 8th execution mode, as mentioned above, use in the recess with the contraposition of the peristome 280d formation of the n type electric current barrier layer 280c of protuberance embedding monolithic type laser diode 270 by the contraposition that the protrusion 228 with bluish violet color laser element 220 constitutes, utilize chimeric with protuberance and recess of this contraposition, bluish violet color laser element 220 in the time of can suppressing to fit bluish violet color laser element 220 and monolithic type laser diode 270 and monolithic type laser diode 270 be the dislocation on (directions X of Figure 107) in the horizontal direction.Thus, owing to can suppress from the optical axis of the ejaculation light of bluish violet color laser element 220 and situation from optical axis along continuous straight runs (directions X of Figure 107) dislocation of the ejaculation light of monolithic type laser diode 270, institute so that the ejaculation light of integrated semiconductor laser device to incide the ejaculation light of optical system (lens and speculum etc.) when using easy with respect to the optical axis adjustment transfiguration of optical system.Thus, can reduce the cost of optical axis adjustment cost.In addition, bluish violet color laser element 220 when bluish violet color laser element 220 is with monolithic type laser diode 270 because can suppress to fit and monolithic type laser diode 270 be the dislocation on (directions X of Figure 107) in the horizontal direction, so can suppress the situation that the direction of riving of bluish violet color laser element 220 and monolithic type laser diode 270 staggers each other.Thus, the riving property raising in the time of applying bluish violet color laser element 220 being rived simultaneously afterwards with monolithic type laser diode 270.Consequently, can make from the characteristic raising of the laser of light emergence face (splitting surface) 232 ejaculations.

In addition, in the 8th execution mode, be configured in by light-emitting zone 294a on the same line of stacked direction (the Z direction of Figure 107) of semiconductor layer the light-emitting zone 223a of bluish violet color laser element 220 and infrared laser region 270b, compare with the situation that dislocation is gone up at both direction (stacked direction of semiconductor layer (the Z direction of Figure 107) and horizontal direction (directions X of Figure 107)) in the position of the light-emitting zone 294a of the light-emitting zone 223a of bluish violet color laser element 220 and infrared laser region 270b, can reduce the location interval of the light-emitting zone 294a of the light-emitting zone 223a of bluish violet color laser element 220 and infrared laser region 270b.Thus, incide optical system (lens and speculum etc.) when using at the ejaculation light that makes integrated semiconductor laser device, regulate optical axis so that the light that penetrates from one of the light-emitting zone 223a of bluish violet color laser element 220 and light-emitting zone 294a of infrared laser region 270b incides under the situation the regulation zone of optical system, can suppress the situation in the zone that the opposing party penetrates from the light-emitting zone 294a of the light-emitting zone 223a of bluish violet color laser element 220 and infrared laser region 270b light incides the regulation zone of departing from optical system greatly.Consequently, because become easier, so can further reduce the cost of optical axis adjustment cost with respect to the optical axis adjustment of optical system.

In addition, in the 8th execution mode, by between the p lateral electrode 281a of the p of bluish violet color laser element 220 lateral electrode 230 and monolithic type laser diode 270 and 281b, forming dielectric film 311, even if the p lateral electrode 230 of bluish violet color laser element 220 is relative to 281b ground stacked (integrated) bluish violet color laser element 220 and monolithic type laser diode 270 with the p lateral electrode 281a of monolithic type laser diode 270, also can come the p lateral electrode 230 of electric insulation bluish violet color laser element 220 and the p lateral electrode 281a and the 281b of monolithic type laser diode 270 by dielectric film 311.Thus, because can apply different voltage respectively with the p lateral electrode 281a and the 281b of monolithic type laser diode 270, so the degree of freedom to the method for supplying power to of the light-emitting zone 274a of the light-emitting zone 223a of bluish violet color laser element 220 and monolithic type laser diode 270 and 294a is improved to the p of bluish violet color laser element 220 lateral electrode 230.Consequently, realize the variation of the using method of integrated semiconductor laser device.

In addition, in the 8th execution mode, red laser region 270a by in monolithic type laser diode 270, forming bluish violet color laser element 220, monolithic type laser diode 270 and the pairing contact hole 301a of each p lateral electrode 230,281a and 281b of infrared laser region 270b, 283 and 301b, can be easily through the contact hole 301a of correspondence, 283 and 301b apply the voltage that has nothing in common with each other to the red laser region 270a of bluish violet color laser element 220, monolithic type laser diode 270 and each p lateral electrode 230,281a and the 281b of infrared laser region 270b.

In addition, other effect of the 8th execution mode is the same with above-mentioned the same the 7th execution mode.

Below, the manufacture process of the integrated semiconductor laser device of the 8th execution mode is described with reference to Figure 106～Figure 132.

At first, shown in 108, use the same process of process with the 1st execution mode of Fig. 3～shown in Figure 11, after being formed up to p lateral electrode 230, grind the back side of n type GaN substrate 221, be about 150 μ m up to thickness above protrusion 228 to the back side of n type GaN substrate 221.

Afterwards, shown in Figure 109, use plasma CVD method, on p lateral electrode 230, form have peristome 311a, have simultaneously about 200nm thickness by SiO ₂The dielectric film 311 that film constitutes.When forming this dielectric film 311, peristome 311a is configured in corresponding in the regulation zone beyond the zone of protrusion 228.

Afterwards, shown in Figure 110, use the electron beam evaporation plating method, on the back side of n type GaN substrate 221, form n lateral electrode 231.So, the surface of formation p lateral electrode 230 is had the bluish violet color laser element 220 of dielectric film 311 coverings of peristome 311a.

Afterwards, shown in Figure 111, form the soldering-tin layer 312a～312c that constitutes by Au-Sn.Particularly, be arranged in dielectric film 311 corresponding to the p lateral electrode 230 in the zone of peristome 311a above on form soldering-tin layer 312a.In addition, cover at least dielectric film 311 corresponding to the zone ground of protrusion 228 and soldering-tin layer 312a at interval predetermined distance form soldering-tin layer 312b.In addition, clamping protrusion 228, with the opposition side zone of soldering-tin layer 312a in, with soldering-tin layer 312b at interval predetermined distance form soldering-tin layer 312c.

Afterwards, when forming monolithic type laser diode 270, at first shown in Figure 112, use mocvd method, on n type GaAs substrate 271, the n type covering 293 that is made of n type AlGaAs that makes the n type resilient coating that is made of n type GaAs 292 with about 300nm thickness and have 2 μ m thickness is grown successively.Afterwards, on n type covering 293, make active layer 294 growths.When making these active layer 294 growths, make a plurality of trap layers (not shown) that constitute by unadulterated AlGaAs and a plurality of barrier layers (not shown) intergrowth that constitutes by unadulterated AlGaAs.Thus, form active layer 294 with a plurality of trap layers (not shown) that interaction cascading is made of unadulterated AlGaAs and the MQW structure on a plurality of barrier layers (not shown) that constitute by unadulterated AlGaAs.

Afterwards, on active layer 294, p type the 2nd covering 296 that is made of p type AlGaAs that makes the p type that is made of p type AlGaAs the 1st covering 295 with about 300nm thickness and have about 1.2 μ m thickness is grown successively.Afterwards, on p type the 2nd covering 296, the p type contact layer 298 that is made of p type GaAs that makes the p type cap rock that is made of p type GaAs 297 with about 100nm thickness and have about 300nm thickness is grown successively.

Afterwards, shown in Figure 113, in the regulation zone on p type contact layer 298, form resist 313.

Afterwards, shown in Figure 114, use the wet etch techniques of phosphoric acid and hydrogen peroxide, resist 313 as mask, is etched to n type resilient coating 292 from p type contact layer 298.Afterwards, remove resist 313.

Afterwards, shown in Figure 115, use mocvd method, n type resilient coating 272 that is made of n type GaInP with about 300nm thickness and the n type covering 273 that is made of n type AlGaInP with about 2 μ m thickness are grown successively.Afterwards, on n type covering 273, make active layer 274 growths.When making these active layer 274 growths, make a plurality of trap layers (not shown) that constitute by unadulterated GaInP and a plurality of barrier layers (not shown) intergrowth that constitutes by unadulterated AlGaInP.Thus, form active layer 274 with a plurality of trap layers (not shown) that interaction cascading is made of unadulterated GaInP and the MQW structure on a plurality of barrier layers (not shown) that constitute by unadulterated AlGaInP.

Afterwards, on active layer 274, p type the 2nd covering 276 that is made of p type AlGaInP that makes the p type that is made of p type AlGaInP the 1st covering 275 with about 300nm thickness and have about 1.2 μ m thickness is grown successively.Afterwards, on p type the 2nd covering 276, make the p type intermediate layer that constitutes by p type GaInP 277 growths with about 100nm thickness.

Afterwards, shown in Figure 116, the regulation zone on the p type intermediate layer 277 that is arranged in the non-existent zone of each layer of semiconductor (292～298) forms resist 314.

Afterwards, shown in Figure 117, use the wet etch techniques of the mixed liquor of hydrobromic acid, hydrochloric acid and water, resist 314 as mask, is etched to n type resilient coating 272 from p type intermediate layer 277.Thus, be formed for separating the splitter box 270c of red laser region 270a and infrared laser region 270b.Afterwards, remove resist 314.

Afterwards, shown in Figure 118, use plasma CVD method,, form SiO with about 240nm thickness in the regulation zone that is arranged on the p type intermediate layer 277 of red laser region 270a ₂Film 315a.In addition, simultaneously also in the regulation zone that is arranged on the p type contact layer 298 of infrared laser region 270b, form by with SiO ₂The SiO that the layer that film 315a is identical constitutes ₂ Film 315b.

Afterwards, shown in Figure 119,, use wet etch techniques, etching p type intermediate layer 277 and p type the 2nd covering 276 of the mixed liquor of hydrobromic acid, hydrochloric acid and water at red laser region 270a.In addition, at infrared laser region 270b, use the wet etch techniques of phosphoric acid and aquae hydrogenii dioxidi, etching p type contact layer 298, p type cap rock 297 and p type the 2nd covering 296.Thus, form the protrusion 299 that constitutes by p type contact layer 298, p type cap rock 297 and p type the 2nd covering 296.

Afterwards, shown in Figure 120, use mocvd method, with SiO ₂Film 315a and 315b are as selecting growth mask, and formation has the semiconductor layer 280 that is about 2 μ m thickness on whole.Thus, semiconductor layer 280 at n type GaAs substrate 271, above p type the 1st covering 275 and 295 on selectively after the growth, cover SiO ₂Film 315a and 315b ground are along cross growth.When making these semiconductor layer 280 growths, make the growth of n type AlInP layer (not shown) and n type GaAs layer (not shown) successively.

Afterwards, shown in Figure 121, use plasma CVD method, in the zone beyond the zone of formation peristome 280b on semiconductor layer 280 and 280d (with reference to Figure 107), formation has the SiO that is about 240nm thickness ₂Film 316.

Afterwards, shown in Figure 122, using phosphoric acid is the wet etch techniques of etching solution, with SiO ₂Film 316 is as mask, and etching is positioned at the semiconductor layer 280 on p type intermediate layer 277 and p type contact layer 298 top.Thus, in the red laser region 270a of semiconductor layer 280 and infrared laser region 270b, form peristome 280b and 280d respectively.In addition, peristome 280b and 280d form the open distolateral little tapered inner side surfaces of width of width ratio with bottom side.Afterwards, remove SiO ₂Film 315a, 315b and 316.

Afterwards, shown in Figure 123,, use mocvd method, on p type intermediate layer 277, the p type contact layer 278 that is made of p type GaAs with about 300nm thickness is grown at red laser region 270a.Thus, form the protrusion 279 that constitutes by p type contact layer 278, p type intermediate layer 277 and p type the 2nd covering 276.Afterwards,, use means of electron beam deposition, on protrusion 279 (p type contact layer 278), form and have the p lateral electrode 281a that is about 0.3 μ m thickness at red laser region 270a, through peristome 280b extend to semiconductor layer 280 above last regulation zone.When forming this p lateral electrode 281a, form AuZn layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.In addition, also in infrared laser region 270b, use means of electron beam deposition simultaneously, on protrusion 299 (p type contact layer 298) on, the p lateral electrode 281b that formation is made of identical with p lateral electrode 281a layer, through peristome 280d extend to semiconductor layer 280 above last regulation zone.In addition, p lateral electrode 281a and 281b expose in the zone corresponding to splitter box 270c that the end of splitter box 270c side is configured to semiconductor layer 280.In addition, expose in the regulation zone that is configured to be positioned at the semiconductor layer 280 of red laser region 270a, the end with splitter box 270c opposition side of p lateral electrode 281a.In addition, expose in the regulation zone that is configured to be positioned at the semiconductor layer 280 of infrared laser region 270b, the end with splitter box 270c opposition side of p lateral electrode 281b.

Afterwards, shown in Figure 124, grind the back side of n type GaAs substrate 271, till above protrusion 299, becoming about 100 μ m to the thickness at the back side of n type GaAs substrate 271.Afterwards, cover zone whole the ground formation resist 317 in addition corresponding to splitter box 270c of semiconductor layer 280.Then, use wet etch techniques, with resist 317 as mask, etching semiconductor layer 280.Thus, shown in Figure 125, semiconductor layer 280 (with reference to Figure 124) is divided to be broken into n type electric current barrier layer 280a that red laser region 270a uses and the n type electric current barrier layer 280c of infrared laser region 270b.Afterwards, remove resist 317.

Afterwards, shown in Figure 126, at infrared laser region 270b, use plasma CVD method, not covering in the regulation zone of exposing on p lateral electrode 281b ground on n type electric current barrier layer 280c, with p lateral electrode 281b predetermined distance at interval, form have about 200nm thickness by SiO ₂The dielectric film 300 that film constitutes.

Afterwards, shown in Figure 127, use the electron beam evaporation plating method, on the zone beyond the formation of contact hole 283,301a and 301b (with reference to Figure 107) on n type GaAs substrate 271 back sides zone, when forming the function that has as etching mask, also have a n lateral electrode 282 that is about 1 μ m thickness.When forming this n lateral electrode 282, form AuGe layer (not shown), Ni layer (not shown) and Au layer (not shown) successively.

Then, shown in Figure 128, at red laser region 270a, utilizing chlorine is the RIE method of gas, with n lateral electrode 282 as mask, by remove n type GaAs substrate 271, each layer of semiconductor (272～275 and 280a) and p lateral electrode 281a from the back side of n type GaAs substrate 271, form circular contact hole 283.Simultaneously, at infrared laser region 270b, form contact hole 301a and 301b.That is, utilizing chlorine is the RIE method of gas, and n lateral electrode 282 as mask, by remove n type GaAs substrate 271, each layer of semiconductor (292～295 and 280c) and dielectric film 300 from the back side of n type GaAs substrate 271, is formed circular contact hole 301a.In addition, with contact hole 301a at interval in the zone of predetermined distance, by remove n type GaAs substrate 271, each layer of semiconductor (292～295 and 280c) and p lateral electrode 281b from the back side of n type GaAs substrate 271, form circular contact hole 301b.

Afterwards, shown in Figure 129,, use plasma CVD method at red laser region 270a, on the medial surface of contact hole 283, be formed extended at both sides along the surface with n type GaAs substrate 271 opposition sides of n lateral electrode 282 have about 200nm thickness by SiO ₂The dielectric film 284a that film constitutes.When forming this dielectric film 284a, the end of dielectric film 284a is shown in Figure 106, and a surperficial part that is configured to the n lateral electrode 282 of red laser region 270a is exposed.Simultaneously, shown in Figure 129,, on the medial surface of contact hole 301a and 301b, be formed extended at both sides the dielectric film 284b that constitutes by the layer identical along the surface with n type GaAs substrate 271 opposition sides of n lateral electrode 282 with dielectric film 284a at infrared laser region 270b.When forming this dielectric film 284b, the end of dielectric film 284b is shown in Figure 106, and a surperficial part that is configured to the n lateral electrode 282 of infrared laser region 270b is exposed.

Afterwards, shown in Figure 130, in the zone beyond the formation zone of n lateral electrode 282 and lip-deep taking-up electrode 285a, 285b n type GaAs substrate 271 opposition sides and 285c (with reference to Figure 107), form resist 318.Afterwards, use the electron beam evaporation plating method, cover the medial surface of contact hole 283,301a and 301b and resist 318, dielectric film 284a and 284b with n type GaAs substrate 271 opposition sides form metal level 285 outwardly with about 0.3 μ m thickness.When forming this metal level 285, form Ti layer (not shown), Pt layer (not shown) and Au layer (not shown) successively.Afterwards, remove resist 318.At this moment, the lip-deep metal level 285 with n type GaAs substrate 271 opposition sides that is formed at resist 318 is also removed simultaneously.

Thus, shown in Figure 131,, be positioned on the dielectric film 284a of contact hole 283, forming and extend to taking-up electrode 285a dielectric film 284a and lip-deep regulation zones n type GaAs substrate 271 opposition sides at red laser region 270a.In addition, at infrared laser region 270b, be positioned on the dielectric film 284b of contact hole 301a the taking-up electrode 285b that is formed on when extending to lip-deep regulation zone dielectric film 284b and n type GaAs substrate 271 opposition sides, constitutes by the layer identical with taking out electrode 285a.And, be positioned on the dielectric film 284b of contact hole 301b the taking-up electrode 285c that is formed on when extending to lip-deep regulation zone dielectric film 284b and n type GaAs substrate 271 opposition sides, constitutes by the layer identical with taking out electrode 285a.So, form monolithic type laser diode 270.Afterwards, in red laser region 270a, on the p lateral electrode 281a on be positioned at protrusion 279, the regulation that extends on the p lateral electrode 281 that is positioned on n type electric current barrier layer 280a top forms the soldering-tin layer 312d that is made of Au-Sn regionally.

Below, the joint method of bluish violet color laser element 220 and monolithic type laser diode 270 is described with reference to Figure 132.

At first, shown in Figure 132, the contraposition that will be made of the peristome 280d of the n type electric current barrier layer 280c of monolithic type laser diode 270 (red laser region 270b) becomes state towards downside with recess, simultaneously, the contraposition that constitutes by the protrusion 228 that is embedded into by bluish violet color laser element 220 is carried out contraposition with in the protuberance.Then, the contraposition that will constitute by the peristome 280d of n type electric current barrier layer 280c be embedded into recess the contraposition that constitutes by protrusion 228 with the state in the protuberance under, by under about 280 ℃ temperature conditions, heat-treating soldering-tin layer 312a～312d that fusion is made of Au-Sn.Afterwards, solidify, engage bluish violet color laser element 220 and monolithic type laser diode 270 by soldering-tin layer 312a～312d through dielectric film 311 by soldering-tin layer 312a in being cooled to the process of room temperature～312d.In addition, the taking-up electrode 285b of soldering-tin layer 312a contact monolithic type laser diode 270 (the infrared laser region 270b) of the p lateral electrode 230 of contact bluish violet color laser element 220.In addition, the soldering-tin layer 312b that is positioned at infrared laser region 270b contacts with the taking-up electrode 285c of monolithic type laser diode 270 (infrared laser region 270b) and the p lateral electrode 281b of infrared laser region 270b.In addition, the soldering-tin layer 312c that is positioned at red laser region 270a is when melting with soldering-tin layer 312d, and the soldering-tin layer 312c after this is melting contacts with the taking-up electrode 285a of monolithic type laser diode 270 (red laser region 270a) and the p lateral electrode 281a of red laser region 270a with 312d.

At this moment, in the 8th execution mode, the contraposition that can constitute with protuberance and peristome 280d by n type electric current barrier layer 280c by the contraposition that is made of protrusion 228 suppresses the dislocation on (directions X of Figure 106 and Figure 107) in the horizontal direction of bluish violet color laser element 220 and monolithic type laser diode 270 with recess chimeric.Thus, can suppress the situation that the direction of riving of bluish violet color laser element 220 and monolithic type laser diode 270 staggers each other.

Afterwards, form light emergence face 232 (with reference to Figure 106) afterwards at bluish violet color laser element 220 that is engaged with each other by riving simultaneously and monolithic type laser diode 270, be separated into each element, simultaneously, go up the n lateral electrode 231 that engages bluish violet color laser element 220 at the secondary mounting panel of conductivity (not shown).At last, shown in Figure 106 and Figure 107, taking out on electrode 285a, 285b and 285c and surfaces bluish violet color laser element 220 opposition sides bond line (gold thread) 313a, 313b and 313c respectively.In addition, in the zone that expose on the surface with bluish violet color laser element 220 opposition sides of n lateral electrode 282, the end of bond line (gold thread) 313d, simultaneously, go up the other end of bond line 313d at the secondary mounting panel of the conductivity that engages with the n lateral electrode 231 of bluish violet color laser element 220 (not shown).Like this, form the integrated semiconductor laser device of the 8th execution mode.

In addition, current disclosed execution mode should think it only is example in all respects, rather than restriction.Scope of the present invention is not by the explanation of above-mentioned execution mode but represented by the scope of claim, and, also be included in and the implication of the scope equalization of claim and the whole changes in the scope.

For example, in above-mentioned the 1st～the 8th execution mode, show with the present invention be applicable to the integrated semiconductor laser device that comprises bluish violet color laser element and red laser element or, comprise the example in the integrated semiconductor laser device of bluish violet color laser element, red laser element and infrared laser element, but the invention is not restricted to this, also applicable to the integrated semiconductor laser device that comprises bluish violet color laser element and infrared laser element and, comprise in the integrated semiconductor laser device of red laser element and infrared laser element.In addition, also applicable in the integrated semiconductor laser device that comprises plural bluish violet color laser element, red laser element and infrared laser element semiconductor Laser device in addition.

In addition, in above-mentioned the 1st～the 8th execution mode, the side of protuberance and the medial surface of recess are formed taper respectively, but the invention is not restricted to this, also can the side of protuberance and the medial surface of recess not formed taper.

In addition, in above-mentioned the 1st～the 8th execution mode, show the example of soldering-tin layer, but the invention is not restricted to this, also can use the knitting layer that constitutes by the material beyond the soldering-tin layer as knitting layer.

In addition, in above-mentioned the 1st～the 8th execution mode, in the red laser element, use to comprise the electric current barrier layer of n type GaAs layer, but the invention is not restricted to this, also can be with by SiN _XOr SiO ₂Be used as the electric current barrier layer Deng the dielectric film that constitutes.

In addition, in above-mentioned the 1st～the 8th execution mode, be set in contraposition with the thickness of the electrode on the protuberance side with to be positioned at contraposition identical with the thickness of the electrode on the zone beyond the protuberance side, but the invention is not restricted to this, can make also that to be positioned at contraposition littler with the thickness of the electrode on the zone beyond the protuberance side than being positioned at contraposition with the thickness of the electrode on the protuberance side.

In addition, in above-mentioned the 1st～the 8th execution mode, be set in contraposition with the thickness of the electrode on the recess medial surface with to be positioned at contraposition identical with the thickness of the electrode on the zone beyond the recess medial surface, but the invention is not restricted to this, can make also that to be positioned at contraposition littler with the thickness of the electrode on the zone beyond the recess medial surface than being positioned at contraposition with the thickness of the electrode on the recess medial surface.

In addition, in the above-mentioned the 7th and the 8th execution mode, between the 1st semiconductor Laser device (bluish violet color laser element) and the 2nd semiconductor Laser device (red laser element or monolithic type laser diode), form by SiO ₂The dielectric film that film constitutes, but the invention is not restricted to this, also can between the 1st semiconductor Laser device and the 2nd semiconductor Laser device, form SiO ₂Dielectric film beyond the film.As SiO ₂Dielectric film beyond the film, for example SiN _XFilm, TiO ₂Film and ZrO ₂Film etc.

In addition, in the above-mentioned the 7th and the 8th execution mode, forming between the 1st semiconductor Laser device and the 2nd semiconductor Laser device under the situation of dielectric film, the contraposition protuberance is set in the 1st semiconductor Laser device, simultaneously, at the 2nd semiconductor Laser device the contraposition recess is set, but the invention is not restricted to this, also can form between the 1st semiconductor Laser device and the 2nd semiconductor Laser device under the situation of dielectric film, the contraposition recess is set in the 1st semiconductor Laser device, simultaneously, at the 2nd semiconductor Laser device the contraposition protuberance is set.

Claims (18)

1. integrated semiconductor laser device is characterized in that:

Comprise: when comprising the 1st light-emitting zone, have the 1st semiconductor Laser device of the 1st protrusion that constitutes protuberance; With

When comprising the 2nd light-emitting zone, have the 2nd semiconductor Laser device of recess,

Described the 2nd semiconductor Laser device also comprises:

The 2nd protrusion; With

The electric current barrier layer, the side that this electric current barrier layer covers described the 2nd protrusion forms, and has the thickness also bigger than the height of described the 2nd protrusion, simultaneously, has peristome in the zone corresponding to described the 2nd protrusion,

The described recess of described the 2nd semiconductor Laser device is made of the described peristome of described electric current barrier layer,

In the described peristome of the described electric current barrier layer that constitutes described recess, embed described the 1st protrusion.

2. integrated semiconductor laser device according to claim 1 is characterized in that:

Described the 1st light-emitting zone, described the 2nd light-emitting zone, described the 1st protrusion and described the 2nd protrusion are disposed on the same line of stacked direction of semiconductor layer.

3. integrated semiconductor laser device according to claim 1 is characterized in that:

Between described the 1st protrusion and described the 2nd protrusion, be provided with the knitting layer that described the 1st semiconductor Laser device and described the 2nd semiconductor Laser device are engaged.

4. integrated semiconductor laser device according to claim 1 is characterized in that: described protuberance and described recess form the edge and extend with the direction that light emergence face intersects.

5. integrated semiconductor laser device according to claim 1 is characterized in that:

The taper that the width that described protuberance has the top ends side is littler than the width of root side,

Described recess has the width of bottom side than the open distolateral little taper of width.

6. integrated semiconductor laser device according to claim 1 is characterized in that: described protuberance and described recess engage each other through knitting layer with conducting.

7. integrated semiconductor laser device according to claim 1 is characterized in that:

Described the 1st semiconductor Laser device also comprise be disposed at described the 2nd semiconductor Laser device side, to the 1st electrode of described the 1st light-emitting zone power supply,

Described the 2nd semiconductor Laser device also comprise be disposed at described the 1st semiconductor Laser device side, to the 2nd electrode of described the 2nd light-emitting zone power supply,

Described the 1st electrode is electrically connected with described the 2nd electrode.

8. integrated semiconductor laser device according to claim 7 is characterized in that:

In described the 2nd semiconductor Laser device, the zone in the described semiconductor layer beyond described the 2nd protrusion forms the contact hole that extends along the stacked direction of described semiconductor layer,

Described the 1st electrode and described the 2nd electrode are connected with external electric from described the 2nd semiconductor Laser device side through described contact hole.

9. integrated semiconductor laser device according to claim 8 is characterized in that:

On the medial surface of described contact hole, form the taking-up electrode that is electrically connected on described the 1st electrode and described the 2nd electrode.

10. integrated semiconductor laser device according to claim 1 is characterized in that:

Described the 1st semiconductor Laser device also comprise be disposed at described the 2nd semiconductor Laser device side, to the 1st electrode of described the 1st light-emitting zone power supply,

Described the 2nd semiconductor Laser device also comprise be disposed at described the 1st semiconductor Laser device side, to the 2nd electrode of described the 2nd light-emitting zone power supply,

At least between described the 1st electrode and described the 2nd electrode, dispose dielectric film.

11. integrated semiconductor laser device according to claim 10 is characterized in that:

In described dielectric film, the zone in the described semiconductor layer beyond described the 2nd protrusion forms peristome, simultaneously, in the zone corresponding to the described peristome of described dielectric film of described the 2nd semiconductor Laser device, form the 1st contact hole that extends along the stacked direction of described semiconductor layer

Described the 1st electrode is connected with external electric from described the 2nd semiconductor Laser device side through the described peristome of described the 1st contact hole and described dielectric film.

12. integrated semiconductor laser device according to claim 11 is characterized in that:

On the medial surface of described the 1st contact hole, form the 1st taking-up electrode that is electrically connected on described the 1st electrode.

13. integrated semiconductor laser device according to claim 11 is characterized in that:

In described the 2nd semiconductor Laser device, the zone in the described semiconductor layer beyond described the 2nd protrusion and described the 1st contact hole forms the 2nd contact hole that extends along the stacked direction of described semiconductor layer,

Described the 2nd electrode is connected with external electric from described the 2nd semiconductor Laser device side through described the 2nd contact hole.

14. integrated semiconductor laser device according to claim 13 is characterized in that:

On the medial surface of described the 2nd contact hole, form the 2nd taking-up electrode that is electrically connected on described the 2nd electrode.

15. integrated semiconductor laser device according to claim 13 is characterized in that:

Also comprise the 3rd semiconductor Laser device, the 3rd semiconductor Laser device comprises the 3rd light-emitting zone and the 3rd electrode, and the 3rd electrode is configured in described the 1st semiconductor Laser device side, to described the 3rd light-emitting zone power supply,

Described dielectric film except being configured between described the 1st electrode and described the 2nd electrode, also is configured between described the 1st electrode and described the 3rd electrode.

16. integrated semiconductor laser device according to claim 15 is characterized in that:

Described the 2nd semiconductor Laser device and described the 3rd semiconductor Laser device are formed on the common substrate.

17. integrated semiconductor laser device according to claim 15 is characterized in that:

In described the 3rd semiconductor Laser device, form the 3rd contact hole that extends along the stacked direction of described semiconductor layer,

Described the 3rd electrode is connected with external electric from described the 3rd semiconductor Laser device side through described the 3rd contact hole.

18. integrated semiconductor laser device according to claim 17 is characterized in that:

On the medial surface of described the 3rd contact hole, form the 3rd taking-up electrode that is electrically connected on described the 3rd electrode.

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