JP2006093379A - Integrated semiconductor laser element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an integrated semiconductor laser element capable of improving the characteristics of laser beam and reducing a cost for optical axis adjustment. <P>SOLUTION: The integrated semiconductor laser element is equipped with a purple-blue laser element 110 comprising a light emitting region 13 and a ridge unit 8, and a red laser element 120 comprising another light emitting region 34 and the opening 30a of an n-type current block layer 30. In this case, the ridge unit 8 is fitted into the opening 30a of the n-type current block layer 30 while the light emitting region 13 and the light emitting region 34 are arranged on the same line in the laminating direction of a semiconductor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an integrated semiconductor laser device and a manufacturing method thereof, and more particularly to an integrated semiconductor laser device including a plurality of semiconductor laser devices and a manufacturing method thereof.

  Conventionally, an integrated semiconductor laser element in which a plurality of semiconductor laser elements are integrated in the stacking direction of semiconductor layers is known (see, for example, Patent Document 1).

  FIG. 91 is a perspective view showing the structure of a conventional integrated semiconductor laser device. Referring to FIG. 91, in a conventional integrated semiconductor laser element, a first semiconductor laser element 310 and a second semiconductor laser element 320 are integrated in the stacking direction (vertical direction, Z direction) of semiconductor layers.

  A ridge portion 312 and a recess 313 are formed in the semiconductor element layer 311 constituting the first semiconductor laser element 310. The ridge 312 and the recess 313 are arranged at a predetermined interval in the horizontal direction (X direction). The peripheral region of the ridge portion 312 of the semiconductor element layer 311 becomes the light emitting region 314 of the first semiconductor laser element 310. In addition, a ridge portion 322 and a concave portion 323 are formed in the semiconductor element layer 321 constituting the second semiconductor laser element 320. The ridge portion 322 and the concave portion 323 are arranged at a predetermined interval in the X direction. Then, the peripheral region of the ridge portion 322 of the semiconductor element layer 321 becomes the light emitting region 324 of the second semiconductor laser element 321.

  Further, the first semiconductor laser element 310 and the second semiconductor laser element 320 are bonded together through bonding layers 315 and 325. Specifically, the ridge portion 312 of the first semiconductor laser element 310 and the concave portion 323 of the second semiconductor laser element 320 coincide with each other, and the ridge portion 322 of the second semiconductor laser element 320 and the first semiconductor are aligned. The laser element 310 is bonded so that the position of the laser element 310 coincides with the concave portion 313.

JP 2002-299739 A

  However, in the conventional integrated semiconductor laser device shown in FIG. 91, the ridge portion 312 (ridge portion 322) of the first semiconductor laser device 310 (second semiconductor laser device 320) is the second semiconductor laser device 320 (first semiconductor laser device 320). The semiconductor laser element 310) is not fitted in the recess 323 (recess 313). Therefore, when the first semiconductor laser element 310 and the second semiconductor laser element 320 are bonded together, the first semiconductor laser element 310 and the second semiconductor laser element 320 move in the horizontal direction (X direction, Y direction). There is an inconvenience that it is difficult to suppress. As a result, there arises a disadvantage that the first semiconductor laser element 310 and the second semiconductor laser element 320 are bonded together in a state where the cleavage directions of the first semiconductor laser element 310 and the second semiconductor laser element 320 do not coincide with each other. . As a result, since the cleavage property when simultaneously cleaving the first semiconductor laser element 310 and the second semiconductor laser element 320 is lowered, the characteristic of the laser light emitted from the cleavage surface (light emitting surface) is deteriorated. There is a point.

  In the conventional integrated semiconductor laser element shown in FIG. 91, the light emitting region 314 of the first semiconductor laser element 310 and the light emitting region 324 of the second semiconductor laser element 320 are predetermined in the horizontal direction (X direction). In addition to being arranged at intervals, they are also arranged at predetermined intervals in the stacking direction (Z direction) of the semiconductor layers. That is, the light emitting region 314 of the first semiconductor laser element 310 and the light emitting region 324 of the second semiconductor laser element 320 are arranged so as to be shifted in two directions, the horizontal direction (X direction) and the stacking direction of the semiconductor layers (Z direction). Has been. For this reason, for example, the position interval between the light emitting region 314 and the light emitting region 324 is larger than when the positions of the light emitting region 314 and the light emitting region 324 are shifted only in one of the X direction and the Z direction. There is an inconvenience of becoming. As described above, when the interval between the positions of the light emitting region 314 and the light emitting region 324 becomes large, the light emitted from the integrated semiconductor laser element is emitted when entering the optical system (lens, mirror, etc.) for use. Even if the optical axis is adjusted so that the light emitted from one of the regions 314 and 324 enters the predetermined region of the optical system, the light emitted from the other of the light emitting regions 314 and 324 deviates from the predetermined region of the optical system. May enter the area. As a result, since it is difficult to adjust the optical axis of the emitted light with respect to the optical system, there is a problem that the cost for adjusting the optical axis increases.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to improve the characteristics of laser light and to reduce the cost for adjusting the optical axis. It is to provide an integrated semiconductor laser device.

  Another object of the present invention is to provide an integrated semiconductor laser device capable of easily manufacturing an integrated semiconductor laser device capable of improving the characteristics of laser light and reducing the cost for optical axis adjustment. It is to provide a manufacturing method.

Means for Solving the Problems and Effects of the Invention

  To achieve the above object, an integrated semiconductor laser device according to a first aspect of the present invention includes a first semiconductor laser device including a first light emitting region and having one of a convex portion and a concave portion, and a second light emitting region. And a second semiconductor laser element having the other of the convex portion and the concave portion. One of the convex portion and the concave portion of the first semiconductor laser element is fitted into the other of the convex portion and the concave portion of the second semiconductor laser element, and the first light emitting region and the second light emitting region are substantially semiconductor. It arrange | positions on the same line of the lamination direction of a layer.

  In the integrated semiconductor laser device according to the first aspect, as described above, by fitting one of the convex portion and the concave portion of the first semiconductor laser element into the other of the convex portion and the concave portion of the second semiconductor laser element, By fitting the convex portion and the concave portion, horizontal displacement of the first semiconductor laser element and the second semiconductor laser element when the first semiconductor laser element and the second semiconductor laser element are bonded together can be suppressed. it can. As a result, it is possible to prevent the optical axis of the emitted light from the first semiconductor laser element and the optical axis of the emitted light from the second semiconductor laser element from being shifted in the horizontal direction. It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the incident light is incident on the optical system (such as a lens and a mirror). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the horizontal displacement of the first semiconductor laser element and the second semiconductor laser element when the first semiconductor laser element and the second semiconductor laser element are bonded together can be suppressed, the first semiconductor laser element and It is possible to suppress the cleavage directions of the second semiconductor laser elements from shifting from each other. Thereby, it is possible to improve the cleavage property when the first semiconductor laser element and the second semiconductor laser element are bonded together and then simultaneously cleaved. As a result, it is possible to improve the characteristics of the laser beam emitted from the cleavage plane (light emission surface). In addition, by arranging the first light emitting region and the second light emitting region substantially on the same line in the stacking direction (vertical direction) of the semiconductor layers, the positions of the first light emitting region and the second light emitting region are in two directions. Compared to the case where the direction is shifted in the direction of stacking the semiconductor layers (vertical direction) and the direction perpendicular to the stacking direction of the semiconductor layers (horizontal direction), the distance between the first light emitting region and the second light emitting region is made smaller can do. Thus, when the light emitted from the integrated semiconductor laser element is incident on the optical system and used, the light emitted from one of the first light emitting region and the second light emitting region is incident on a predetermined region of the optical system. When adjusting the optical axis, it is possible to suppress the light emitted from the other of the first light-emitting region and the second light-emitting region from entering a region greatly deviating from the predetermined region of the optical system. As a result, since the optical axis adjustment of the emitted light with respect to the optical system becomes easier, the cost for optical axis adjustment can be further reduced.

  In the integrated semiconductor laser device according to the first aspect, preferably, the convex portion and the concave portion are formed to extend in a direction intersecting with the light emitting surface. If comprised in this way, since the area | region where the convex part and the recessed part are fitted becomes long in the direction which cross | intersects a light-projection surface, it is the 1st at the time of bonding a 1st semiconductor laser element and a 2nd semiconductor laser element. The horizontal displacement between the semiconductor laser element and the second semiconductor laser element can be further suppressed.

  In the integrated semiconductor laser element according to the first aspect, preferably, one of the first semiconductor laser element and the second semiconductor laser element further includes a first ridge portion forming a convex portion, and the first semiconductor laser element and The other of the second semiconductor laser elements includes a recess. With this configuration, the first ridge portion of one of the first semiconductor laser element and the second semiconductor laser element is bonded in a state of being fitted into the other recess of the first semiconductor laser element and the second semiconductor laser element. Thus, the horizontal displacement of the first semiconductor laser element and the second semiconductor laser element during the bonding process can be easily suppressed by fitting the first ridge portion and the recess.

  In this case, preferably, the other of the first semiconductor laser element and the second semiconductor laser element is formed so as to cover the second ridge portion and the side surface of the second ridge portion, and has a thickness larger than the height of the second ridge portion. And a current blocking layer having an opening in a region corresponding to the second ridge portion, and the other recess of the first semiconductor laser element and the second semiconductor laser element is configured by the opening of the current blocking layer The first ridge portion constituting the convex portion is fitted into the opening portion of the current blocking layer constituting the concave portion. If comprised in this way, the 1st ridge part of one of a 1st semiconductor laser element and a 2nd semiconductor laser element is inserted in the opening part of the other current block layer of a 1st semiconductor laser element and a 2nd semiconductor laser element. By laminating in this state, the horizontal displacement of the first semiconductor laser element and the second semiconductor laser element during the laminating process can be more easily detected between the first ridge portion and the opening of the current blocking layer. It can suppress by fitting.

  In the integrated semiconductor laser element according to the first aspect, preferably, at least one of the first semiconductor laser element and the second semiconductor laser element further includes a substrate on which a convex portion or a concave portion is formed. If comprised in this way, a convex part or a recessed part can be easily formed in at least one of a 1st semiconductor laser element and a 2nd semiconductor laser element.

  In the integrated semiconductor laser device according to the first aspect described above, preferably, the convex portion has a tapered shape such that the width on the tip end side becomes smaller than the width on the root portion side, and the concave portion has an open end. It has a tapered shape such that the width on the bottom side is smaller than the width on the side. If comprised in this way, a convex part can be easily engage | inserted in a recessed part.

  In the integrated semiconductor laser element according to the first aspect, preferably, the convex portion and the concave portion are bonded via a bonding layer. If comprised in this way, a convex part and a recessed part can be easily joined by a joining layer.

  According to a second aspect of the present invention, there is provided a method for manufacturing an integrated semiconductor laser device comprising: a first semiconductor laser element having one of a convex portion and a concave portion; and a second semiconductor laser element having the other of the convex portion and the concave portion. And a step of cleaving the first semiconductor laser element and the second semiconductor laser element simultaneously with the first semiconductor laser element and the second semiconductor laser element being bonded together And has.

  In the integrated semiconductor laser device according to the second aspect, as described above, the first semiconductor laser device having one of the convex portion and the concave portion and the second semiconductor laser element having the other of the convex portion and the concave portion are convex The first semiconductor laser element and the second semiconductor laser element are simultaneously cleaved in a state where the first semiconductor laser element and the second semiconductor laser element are bonded together This suppresses the horizontal displacement of the first semiconductor laser element and the second semiconductor laser element when the first semiconductor laser element and the second semiconductor laser element are bonded together by fitting the convex part and the concave part. Can do. As a result, it is possible to prevent the optical axis of the emitted light from the first semiconductor laser element and the optical axis of the emitted light from the second semiconductor laser element from being shifted in the horizontal direction. It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the incident light is incident on the optical system (such as a lens and a mirror). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the horizontal displacement of the first semiconductor laser element and the second semiconductor laser element when the first semiconductor laser element and the second semiconductor laser element are bonded together can be suppressed, the first semiconductor laser element and It is possible to suppress the cleavage directions of the second semiconductor laser elements from shifting from each other. Thereby, it is possible to improve the cleavage property when the first semiconductor laser element and the second semiconductor laser element are bonded together and then simultaneously cleaved. As a result, an integrated semiconductor laser element capable of improving the characteristics of laser light emitted from the cleavage plane (light emission surface) can be easily formed.

  In the method of manufacturing an integrated semiconductor laser device according to the second aspect, preferably, the first semiconductor laser device includes a first light emitting region, the second semiconductor laser device includes a second light emitting region, and the first semiconductor The step of laminating the laser element and the second semiconductor laser element includes the first semiconductor laser element and the first semiconductor laser element so that the first light emitting region and the second light emitting region are disposed substantially on the same line in the stacking direction of the semiconductor layers. A step of bonding the second semiconductor laser element to the second semiconductor laser element; With this configuration, the first light-emitting region and the second light-emitting region are positioned in the first direction as compared with the case where the positions of the first light-emitting region and the second light-emitting region are shifted in two directions (a direction in which the semiconductor layers are stacked and a direction perpendicular to the semiconductor layers). The interval between the positions of the light emitting region and the second light emitting region can be reduced. As a result, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light emitted from one of the first light emitting region and the second light emitting region is predetermined in the optical system. When adjusting the optical axis so as to enter the region, it is possible to suppress the light emitted from the other of the first light emitting region and the second light emitting region from entering a region greatly deviating from the predetermined region of the optical system. it can. As a result, since the optical axis adjustment of the emitted light with respect to the optical system becomes easier, the cost for optical axis adjustment can be further reduced.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a plan view showing the structure of an integrated semiconductor laser device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line 100-100 in FIG. First, the structure of the integrated semiconductor laser device according to the first embodiment will be described with reference to FIGS.

  As shown in FIG. 2, the integrated semiconductor laser device according to the first embodiment includes a blue-violet laser device 110 having a convex portion for alignment and a red laser device 120 having a concave portion for alignment in the Z direction. It has a stacked (integrated) structure. The blue-violet laser element 110 and the red laser element 120 are examples of the “first semiconductor laser element” and the “second semiconductor laser element” in the present invention, respectively.

  First, the structure of the blue-violet laser element 110 of the first embodiment will be described. In the blue-violet laser device 110 of the first embodiment, as shown in FIG. 2, an n-type cladding layer 2 made of n-type AlGaN having a thickness of about 2.5 μm is formed on an n-type GaN substrate 1. . An active layer 3 having a thickness of about 70 nm is formed on the n-type cladding layer 2. The active layer 3 has an MQW (Multiple Quantum Well) structure in which a plurality of well layers (not shown) made of undoped InGaN and a plurality of barrier layers (not shown) made of undoped InGaN are alternately stacked. Have On the active layer 3, an optical guide layer 4 made of undoped InGaN having a thickness of about 80 nm is formed. A cap layer 5 made of undoped AlGaN having a thickness of about 20 nm is formed on the light guide layer 4.

  A p-type cladding layer 6 made of p-type AlGaN having a convex portion and a flat portion other than the convex portion is formed on the cap layer 5. The thickness of the flat portion of the p-type cladding layer 6 is about 50 nm, and the height from the upper surface of the flat portion of the convex portion is about 350 nm. A p-type contact layer 7 made of p-type InGaN having a thickness of about 3 nm is formed on the convex portion of the p-type cladding layer 6. The p-type contact layer 7 and the convex portion of the p-type cladding layer 6 constitute a ridge portion 8.

  Here, in the first embodiment, the ridge portion 8 has a side surface having a tapered shape such that the width on the tip portion side becomes smaller than the width on the root portion side. The angle θ1 formed between the side surface of the ridge 8 and the upper surface of the active layer 3 is about 70 °. Further, the width of the tip portion of the ridge portion 8 is about 1.5 μm. Further, as shown in FIG. 1, the ridge portion 8 is formed in a stripe shape (elongated shape) extending in a direction (Y direction) orthogonal to the light emission surface (cleavage surface) 12. The ridge portion 8 becomes a convex portion for alignment. Further, as shown in FIG. 2, the peripheral portion of the active layer 3 below the ridge portion 8 becomes the light emitting region 13 of the blue-violet laser element 110. The ridge portion 8 is an example of the “convex portion” and “first ridge portion” in the present invention. The light emitting region 13 is an example of the “first light emitting region” in the present invention.

A current blocking layer 9 made of a SiO ₂ film having a thickness of about 200 nm is formed so as to cover the side surface of the ridge portion 8 and the upper surface of the flat portion of the p-type cladding layer 6. A p-side electrode 10 is formed on the current block layer 9 so as to be in contact with the upper surface of the ridge portion 8 (p-type contact layer 7). The p-side electrode 10 is composed of a Pd layer (not shown) having a thickness of about 100 nm and an Au layer (not shown) having a thickness of about 1 μm in this order from the n-type GaN substrate 1 side. Accordingly, the protruding height of the alignment convex portion constituted by the ridge portion 8 (positioned on the upper surface of the ridge portion 8 from the upper surface of the p-side electrode 10 positioned on the upper surface of the flat portion of the p-type cladding layer 6). The height to the upper surface of the p-side electrode 10) H1 is about 153 nm.

  As shown in FIG. 2, an n-side electrode 11 is formed on the back surface of the n-type GaN substrate 1. The n-side electrode 11 includes, in order from the n-type GaN substrate 1 side, an Al layer (not shown) having a thickness of about 6 nm, a Pd layer (not shown) having a thickness of about 10 nm, and a thickness of about 300 nm. And an Au layer (not shown).

  Next, the structure of the red laser element 120 of the first embodiment will be described. In the red laser element 120 of FIG. 2, the ridge portion 29 side faces downward. In the red laser element 120 of the first embodiment, as shown in FIG. 2, an n-type buffer layer made of n-type GaInP having a thickness of about 300 nm is formed on the surface of the n-type GaAs substrate 21 on the blue-violet laser element 110 side. 22 is formed. An n-type cladding layer 23 made of n-type AlGaInP having a thickness of about 2 μm is formed on the surface of the n-type buffer layer 22 on the blue-violet laser element 110 side. An active layer 24 having a thickness of about 60 nm is formed on the surface of the n-type cladding layer 23 on the blue-violet laser element 110 side. The active layer 24 has an MQW structure in which a plurality of well layers (not shown) made of undoped GaInP and a plurality of barrier layers (not shown) made of undoped AlGaInP are alternately stacked.

  A p-type first cladding layer 25 made of p-type AlGaInP having a thickness of about 300 nm is formed on the surface of the active layer 24 on the blue-violet laser element 110 side. A convex p-type second cladding layer 26 made of p-type AlGaInP having a thickness of about 1.2 μm is formed in a predetermined region on the surface of the p-type first cladding layer 25 on the blue-violet laser element 110 side. Yes. A p-type intermediate layer 27 made of p-type GaInP having a thickness of about 100 nm is formed on the surface of the p-type second cladding layer 26 on the blue-violet laser element 110 side. A p-type contact layer 28 made of p-type GaAs having a thickness of about 300 nm is formed on the surface of the p-type intermediate layer 27 on the blue-violet laser element 110 side. The p-type contact layer 28, the p-type intermediate layer 27, and the p-type second cladding layer 26 constitute a ridge portion 29 having a tapered side surface that decreases in width from the base portion toward the tip portion side. ing. An angle θ2 formed between the side surface of the ridge portion 29 and the surface of the active layer 24 is about 60 °. The width of the tip portion of the ridge portion 29 is about 2.7 μm. Further, as shown in FIG. 1, the ridge portion 29 is formed in a stripe shape (elongated shape) extending in a direction (Y direction) orthogonal to the light emitting surface (cleavage surface) 12. As shown in FIG. 2, the peripheral portion of the active layer 24 corresponding to the formation position of the ridge portion 29 becomes the light emitting region 34 of the red laser element 120. The ridge portion 29 is an example of the “second ridge portion” in the present invention. The light emitting region 34 is an example of the “second light emitting region” in the present invention.

  Here, in the first embodiment, the height of the ridge portion 29 (about 1.6 μm) so as to cover the side surface of the ridge portion 29 on the surface of the p-type first cladding layer 25 on the blue-violet laser element 110 side. An n-type current blocking layer 30 having a larger thickness (about 2 μm) is formed. The n-type current blocking layer 30 has an opening 30a through which the surface of the ridge 29 on the blue-violet laser element 110 side is exposed. Further, the opening 30a of the n-type current blocking layer 30 has a width on the bottom side (a width of the tip portion of the ridge portion 29 (about 2.7 μm)) smaller than a width on the open end side (about 3 μm). It has a tapered inner surface. The angle θ3 formed by the inner surface of the opening 30a of the n-type current blocking layer 30 and the surface of the active layer 24 is about 70 °. Further, as shown in FIG. 1, the opening 30 a of the n-type current blocking layer 30 is formed in a stripe shape (elongated shape) extending in the Y direction along the ridge portion 29. The n-type current blocking layer 30 includes an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) in this order from the n-type GaAs substrate 21 side. Then, the opening 30a of the n-type current blocking layer 30 becomes a recess for alignment. The n-type current blocking layer 30 is an example of the “current blocking layer” in the present invention, and the opening 30a is an example of the “recessed portion” in the present invention.

  In addition, as shown in FIG. 2, the surface of the n-type current blocking layer 30 on the blue-violet laser element 110 side is covered, and the surface of the ridge portion 29 (p-type contact layer 28) on the blue-violet laser element 110 side is contacted. Thus, the p-side electrode 31 having a thickness of about 0.3 μm is formed. The p-side electrode 31 includes an AuZn layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 21 side. Thereby, the depth of the recess for alignment formed by the opening 30a of the n-type current blocking layer 30 (the blue-violet laser element 110 side of the p-side electrode 31 located in a region other than the region corresponding to the ridge 29) The depth (D1) of the p-side electrode 31 located in the region corresponding to the ridge portion 29 to the surface on the blue-violet laser element 110 side) is approximately 400 nm. That is, the depth D1 (about 400 nm) of the alignment concave portion constituted by the opening 30a of the n-type current blocking layer 30 is the protrusion height H1 of the alignment convex portion constituted by the ridge portion 8 ( 153 nm). An n-side electrode 32 having a thickness of about 1 μm is formed on the surface of the n-type GaAs substrate 21 opposite to the blue-violet laser element 110. The n-side electrode 32 includes an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 21 side.

A circular shape penetrating the n-side electrode 32, the n-type GaAs substrate 21, the semiconductor layers (22 to 25 and 30), and the p-side electrode 31 from the surface opposite to the blue-violet laser element 110 of the n-side electrode 32. Through-hole 120a is formed. The through hole 120a has a diameter on the n-side electrode 32 side of several tens of micrometers, and has a tapered inner surface such that the hole diameter on the p-side electrode 31 side is smaller than the hole diameter on the n-side electrode 32 side. Have On the inner surface of the through hole 120a and on the surface opposite to the blue-violet laser element 110 of the n-side electrode 32 located in the region in the vicinity of the through hole 120a, an insulation made of a SiO ₂ film having a thickness of about 200 nm A film 38 is formed. In a predetermined region on the insulating film 38, an external connection electrode 39 having a thickness of about 0.3 μm is formed so as to be electrically connected to a solder layer 115 described later through the through hole 120a. The external connection electrode 39 includes a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 21 side. A wire (gold wire) 122 is bonded on the surface of the n-side electrode 32 and the external connection electrode 39 on the opposite side to the blue-violet laser element 110.

  Here, in the first embodiment, as shown in FIG. 2, the blue-violet laser element 110 and the red laser element 120 have an alignment convex portion formed by the ridge portion 8 of the n-type current blocking layer 30. It is integrated (laminated) in the Z direction in a state in which it is fitted into a positioning recess formed by the opening 30a. Further, the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 34 of the red laser element 120 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 2). Further, as described above, the depth D1 (about 400 nm) of the alignment concave portion of the red laser element 120 is larger than the protrusion height H1 (153 nm) of the alignment convex portion of the blue-violet laser element 110. Therefore, the distance between the upper surface of the convex portion for alignment of the blue-violet laser element 110 and the bottom surface of the concave portion for alignment of the red laser element 120 is a region other than the convex portion for alignment of the blue-violet laser element 110. And the distance between the red laser element 120 and a region other than the concave portion for alignment. In addition, the alignment convex portion of the blue-violet laser element 110 and the alignment concave portion of the red laser element 120 are joined via a solder layer 115 made of Au—Sn. The solder layer 115 is an example of the “bonding layer” in the present invention. The p-side electrode 10 of the blue-violet laser element 110 and the p-side electrode 31 of the red laser element 120 are electrically connected to the external connection electrode 39 through the solder layer 115.

  In the first embodiment, as described above, the alignment convex portion constituted by the ridge portion 8 of the blue-violet laser element 110 is constituted by the opening 30 a of the n-type current blocking layer 30 of the red laser element 120. The blue-violet laser element 110 and the red color when the blue-violet laser element 110 and the red laser element 120 are bonded together by fitting the convex part for positioning and the concave part. The positional deviation of the laser element 120 in the horizontal direction (X direction in FIG. 2) can be suppressed. As a result, the optical axis of the emitted light from the blue-violet laser element 110 and the optical axis of the emitted light from the red laser element 120 can be prevented from shifting in the horizontal direction (X direction in FIG. 2). It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the type semiconductor laser element is made incident on the optical system (such as a lens and a mirror). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the positional deviation of the blue-violet laser element 110 and the red laser element 120 in the horizontal direction (X direction in FIG. 2) when the blue-violet laser element 110 and the red laser element 120 are bonded together can be suppressed. It is possible to prevent the cleavage directions of the violet laser element 110 and the red laser element 120 from being shifted from each other. Thereby, it is possible to improve the cleavage property when the blue-violet laser element 110 and the red laser element 120 are bonded together and then simultaneously cleaved. As a result, the characteristics of the laser light emitted from the light emitting surface (cleavage surface) 12 can be improved.

  In the first embodiment, the emission region 13 of the blue-violet laser element 110 and the emission region 34 of the red laser element 120 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 2). The positions of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 34 of the red laser element 120 are shifted in two directions (semiconductor layer stacking direction (Z direction in FIG. 2) and horizontal direction (X direction in FIG. 2)). Compared to the case, the distance between the positions of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 34 of the red laser element 120 can be reduced. Thus, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light is emitted from one of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 34 of the red laser element 120. When the optical axis is adjusted so that the emitted light is incident on a predetermined region of the optical system, the light emitted from the other of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 34 of the red laser element 120 is optical. It can suppress entering into the area | region which remove | deviated largely from the predetermined area | region of the system. As a result, the optical axis adjustment with respect to the optical system becomes easier, so that the cost for the optical axis adjustment can be further reduced.

  In the first embodiment, the alignment convex portion (ridge portion 8) of the blue-violet laser element 110 is striped (elongated) so as to extend in a direction perpendicular to the light emitting surface 12 (Y direction in FIG. 1). And the concave portion for alignment of the red laser element 120 (the opening 30a of the n-type current blocking layer 30) extends in a direction perpendicular to the light emitting surface 12 (Y direction in FIG. 1). By forming it in a stripe shape (elongated shape), a region where the alignment convex portion and the concave portion are fitted is elongated in a direction perpendicular to the light emitting surface 12 (Y direction in FIG. 1). Thereby, it is possible to further suppress the displacement in the horizontal direction (X direction in FIG. 1) of the blue-violet laser element 110 and the red laser element 120 when the blue-violet laser element 110 and the red laser element 120 are bonded together.

  In the first embodiment, the alignment convex portion (ridge portion 8) of the blue-violet laser element 110 has a tapered shape such that the width on the tip end side is smaller than the width on the root portion side. By forming the concave portion of the red laser element 120 (the opening 30a of the n-type current blocking layer 30) so as to have a tapered shape such that the width on the bottom side is smaller than the width on the open end side. The positioning convex portion can be easily fitted into the concave portion.

  In the first embodiment, the alignment convex portion of the blue-violet laser element 110 and the alignment concave portion of the red laser element 120 are joined via the solder layer 115, so that the blue-violet laser beam can be easily obtained. The alignment convex portion of the laser element 110 and the alignment concave portion of the red laser element 120 can be joined by the solder layer 115.

  In the first embodiment, the upper surface of the convex portion for alignment of the blue-violet laser element 110 (the portion corresponding to the ridge portion 8) and the bottom surface of the concave portion for alignment of the red laser element 120 (on the ridge portion 29). The distance between the corresponding portion) and the region other than the alignment convex portion of the blue-violet laser element 110 is made larger than the interval between the region other than the alignment concave portion of the red laser element 120, thereby Even if a region other than the alignment convex portion of the purple laser element 110 and a region other than the alignment concave portion of the red laser element 120 come into contact with each other, the upper surface of the convex portion (the portion corresponding to the ridge portion 8) The contact of the bottom surface of the concave portion (the portion corresponding to the ridge portion 29) can be suppressed. Thereby, it is possible to suppress damage to the ridge portions 8 and 29 when the alignment convex portion of the blue-violet laser element 110 and the alignment concave portion of the red laser element 120 are joined.

  In the first embodiment, since the n-type current blocking layer 30 including the n-type GaAs layer is used as the current blocking layer of the red laser element 120, the n-type GaAs layer has good heat dissipation characteristics. The heat dissipation characteristics of the laser element can be improved.

  3 to 28 are a cross-sectional view and a plan view for explaining a manufacturing process of the integrated semiconductor laser device according to the first embodiment shown in FIGS. A manufacturing process for the integrated semiconductor laser device according to the first embodiment is now described with reference to FIGS.

  In the first embodiment, the blue-violet laser element 110 is formed by the processes shown in FIGS. 3 to 13, and the red laser element 120 is formed by the processes shown in FIGS. 14 to 26. When forming the blue-violet laser element 110, first, as shown in FIG. 3, semiconductor layers constituting the blue-violet laser element 110 are grown on the n-type GaN substrate 1. Specifically, an n-type cladding layer 2 made of n-type AlGaN having a thickness of about 2.5 μm is formed on an n-type GaN substrate 1 having a thickness of about 400 μm by using MOCVD (Metal Organic Chemical Deposition) method. Then, an active layer 3 having a thickness of about 70 nm is grown on the n-type cladding layer 2. When the active layer 3 is grown, a plurality of well layers (not shown) made of undoped InGaN and a plurality of barrier layers (not shown) made of undoped InGaN are alternately grown. Thus, the active layer 3 having an MQW structure in which a plurality of well layers and a plurality of barrier layers are alternately stacked is formed on the n-type cladding layer 2.

  Next, an optical guide layer 4 made of undoped InGaN having a thickness of about 80 nm and a cap layer 5 made of undoped AlGaN having a thickness of about 20 nm are sequentially grown on the active layer 3. Thereafter, a p-type cladding layer 6 made of p-type AlGaN having a thickness of about 400 nm and a p-type contact layer 7 made of p-type InGaN having a thickness of about 3 nm are sequentially grown on the cap layer 5.

Next, as shown in FIG. 4, a SiO ₂ film 14 having a thickness of about 240 nm is formed on the p-type contact layer 7 by using a plasma CVD method. Thereafter, a striped (elongated) resist 15 having a width of about 1.5 μm is formed in a region corresponding to the ridge portion 8 (see FIG. 2) on the SiO ₂ film 14.

Next, as shown in FIG. 5, the SiO ₂ film 14 is etched using the resist 15 as a mask by RIE (Reactive Ion Etching) using CF ₄ gas. Thereafter, the resist 15 is removed.

Next, as shown in FIG. 6, using the RIE method using a chlorine-based gas, with the SiO ₂ film 14 as a mask, the depth in the middle of the p-type cladding layer 6 from the upper surface of the p-type contact layer 7 (p-type cladding) Etch from the top surface of layer 6 to a depth of about 350 nm. Thereby, the ridge portion 8 constituted by the convex portion of the p-type cladding layer 6 and the p-type contact layer 7 is formed. At this time, the ridge portion 8 is formed to have a tapered side surface such that the width on the tip portion side becomes smaller than the width on the root portion side. The angle θ1 formed between the side surface of the ridge portion 8 and the upper surface of the active layer 3 (p-type cladding layer 6) is about 70 °, and the width of the tip portion of the ridge portion 8 is about 1.5 μm. Further, as shown in FIG. 1, the ridge portion 8 is formed in a stripe shape (elongated shape) extending in a direction orthogonal to the light emitting surface 12. The ridge portion 8 becomes a convex portion for alignment. Thereafter, the SiO ₂ film 14 is removed.

Next, as shown in FIG. 7, a current blocking layer 9 made of a SiO ₂ film having a thickness of about 200 nm is formed by plasma CVD so as to cover the entire surface. Thereafter, a resist 16 is formed so as to cover the entire surface.

Next, as shown in FIG. 8, the resist 16 is thinned by etching (etching back) over the entire area using a plasma etching technique using oxygen gas, thereby being positioned on the upper surface of the ridge portion 8. The surface of the current blocking layer 9 is exposed. Thereafter, the current blocking layer 9 located on the upper surface of the ridge portion 8 is etched using the resist 16 as a mask by RIE using CF ₄ gas. Thereby, as shown in FIG. 9, the upper surface of the ridge portion 8 is exposed. Thereafter, the resist 16 is removed.

  Next, as shown in FIG. 11, the p-side electrode 10 is formed on the current blocking layer 9 so as to be in contact with the upper surface of the ridge portion 8 (p-type contact layer 7) by using an electron beam evaporation method. . At this time, a Pd layer (not shown) having a thickness of about 100 nm and an Au layer (not shown) having a thickness of about 1 μm are sequentially formed. As a result, the protruding height of the alignment convex portion formed by the ridge portion 8 (positioned on the upper surface of the ridge portion 8 from the upper surface of the p-side electrode 10 positioned on the upper surface of the flat portion of the p-type cladding layer 6). The height to the upper surface of the p-side electrode 10) H1 is about 153 nm. As shown in FIG. 10, the end of the p-side electrode 10 located on the side of the end face 1 a parallel to the light emitting face 12 (see FIG. 1) of the n-type GaN substrate 1 is the end face 1 a of the n-type GaN substrate 1. Are arranged in a region separated by a predetermined interval.

  Next, as shown in FIG. 13, the back surface of the n-type GaN substrate 1 is polished until the thickness from the upper surface of the ridge portion 8 to the back surface of the n-type GaN substrate 1 becomes about 150 μm. Thereafter, an n-side electrode 11 is formed on the back surface of the n-type GaN substrate 1 using an electron beam evaporation method. At this time, an Al layer (not shown) having a thickness of about 6 nm, a Pd layer (not shown) having a thickness of about 10 nm, and an Au layer (not shown) having a thickness of about 300 nm are sequentially formed. To do. Also, as shown in FIG. 12, the end of the n-side electrode 11 located on the side of the end face 1a parallel to the light emitting face 12 (see FIG. 1) of the n-type GaN substrate 1 is the end face 1a of the n-type GaN substrate 1. Are arranged in a region separated by a predetermined interval. As a result, as shown in FIGS. 10 and 12, the region where the p-side electrode 10 and the n-side electrode 11 are not formed is a blue-violet laser when the blue-violet laser element 110 and the red laser element 120 are bonded together. The ridge portion 8 of the element 110 becomes a transparent region 111 that can be visually recognized from above or below the element. In this way, the blue-violet laser element 110 of the first embodiment is formed.

  Next, when forming the red laser element 120, first, as shown in FIG. 14, semiconductor layers constituting the red laser element 120 are grown on the n-type GaAs substrate 21. Specifically, an n-type buffer layer 22 made of n-type GaInP having a thickness of about 300 nm is grown on the n-type GaAs substrate 21 by MOCVD, and then about n-type buffer layer 22 is formed. An n-type cladding layer 23 made of n-type AlGaInP having a thickness of 2 μm is grown. Thereafter, an active layer 24 having a thickness of about 60 nm is grown on the n-type cladding layer 23. When the active layer 24 is grown, a plurality of well layers (not shown) made of undoped GaInP and a plurality of barrier layers (not shown) made of undoped AlGaInP are alternately grown. As a result, an active layer 24 having an MQW structure in which a plurality of well layers and a plurality of barrier layers are alternately stacked is formed on the n-type cladding layer 23.

  Next, a p-type first cladding layer 25 made of p-type AlGaInP having a thickness of about 300 nm and a p-type second cladding layer 26 made of p-type AlGaInP having a thickness of about 1.2 μm are sequentially formed on the active layer 24. Grow. Subsequently, a p-type intermediate layer 27 made of p-type GaInP having a thickness of about 100 nm is grown on the p-type second cladding layer 26, and then a p-type having a thickness of about 300 nm is formed on the p-type intermediate layer 27. A p-type contact layer 28 made of type GaAs is grown.

Next, as shown in FIG. 15, a SiO ₂ film 35 having a thickness of about 240 nm is formed on the p-type contact layer 28 by using a sputtering method, a vacuum evaporation method, or an electron beam evaporation method. Thereafter, a striped (elongated) resist 36 having a width of about 2.7 μm is formed in a region corresponding to the ridge portion 29 (see FIG. 2) on the SiO ₂ film 35.

Next, as shown in FIG. 16, the SiO ₂ film 35 is etched using the resist 36 as a mask by using a wet etching technique using buffered hydrofluoric acid. Thereafter, the resist 36 is removed.

Next, as shown in FIG. 17, a p-type first cladding layer is formed from the upper surface of the p-type contact layer 28 using the SiO ₂ film 35 as a mask by using a wet etching technique using a tartaric acid-based etching solution or a phosphoric acid-based etching solution. Etch up to 25 upper surface. As a result, a ridge portion 29 having a tapered side surface is formed, including the p-type contact layer 28, the p-type intermediate layer 27, and the p-type second cladding layer 26. The angle θ2 formed between the side surface of the ridge portion 29 and the upper surface of the active layer 24 (p-type first cladding layer 25) is about 60 °, and the width of the tip portion of the ridge portion 29 is about 2.7 μm. . Further, as shown in FIG. 1, the ridge portion 29 is formed in a stripe shape (elongated shape) extending in a direction orthogonal to the light emitting surface 12.

Next, as shown in FIG. 18, an n-type current blocking layer 30 having a thickness of about 2 μm is formed on the entire surface using the SiO ₂ film 35 as a selective growth mask by MOCVD. At this time, an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) are sequentially formed. The n-type current blocking layer 30 is selectively grown on the upper surface of the p-type first cladding layer 25 and then grown in the lateral direction so as to cover the SiO ₂ film 35.

Next, as shown in FIG. 19, a stripe shape having a thickness of about 240 nm is formed in a region other than the region corresponding to the opening 30 a (see FIG. 2) on the n-type current blocking layer 30 by using a plasma CVD method. A (long and narrow) SiO ₂ film 37 is formed. Next, the n-type current blocking layer 30 located above the upper surface of the ridge portion 29 is etched using the SiO ₂ film 37 as a mask by using a wet etching technique using a phosphoric acid-based etching solution. As a result, as shown in FIG. 20, an n-type current blocking layer 30 having an opening 30a from which the upper surface of the ridge 29 (SiO ₂ film 35) is exposed is formed. At this time, the opening 30a of the n-type current blocking layer 30 is formed to have a tapered inner surface such that the width on the bottom side is smaller than the width on the open end side. The angle θ3 formed by the inner side surface of the opening 30a of the n-type current blocking layer 30 and the upper surface of the active layer 24 (p-type contact layer 28) is about 70 °. Further, the width of the open end side of the opening 30a of the n-type current blocking layer 30 is about 3 μm, and the width of the bottom side is about 2.7 μm. Further, the opening 30a of the n-type current blocking layer 30 is formed in a stripe shape (elongated shape) along the ridge portion 29 as shown in FIG. The opening 30a of the n-type current blocking layer 30 becomes a concave portion for alignment. Thereafter, the SiO ₂ films 35 and 37 are removed.

  Next, as shown in FIG. 21, an electron beam evaporation method is used. On the n-type current blocking layer 30, about 0.3 μm is formed so as to contact the upper surface of the ridge portion 29 (p-type contact layer 28). A p-side electrode 31 having a thickness is formed. At this time, an AuZn layer (not shown) and a Pt layer (not shown) are sequentially formed. As a result, the depth of the alignment concave portion formed by the opening 30a of the n-type current blocking layer 30 (from the upper surface of the p-side electrode 31 positioned on the upper surface of the current blocking layer 30 to the upper surface of the ridge portion 29). The depth (D1 to the upper surface of the p-side electrode 31) D1 is about 400 nm. That is, the depth D1 (about 400 nm) of the alignment concave portion constituted by the opening 30a of the n-type current blocking layer 30 is the protrusion height H1 of the alignment convex portion constituted by the ridge portion 8 ( 153 nm (see FIG. 2).

  Next, as shown in FIG. 22, the back surface of the n-type GaAs substrate 21 is polished until the thickness from the upper surface of the ridge portion 29 to the back surface of the n-type GaAs substrate 21 becomes about 100 μm. Thereafter, using an electron beam vapor deposition method, an area other than the formation area of the through hole 120a (see FIG. 2) on the back surface of the n-type GaAs substrate 21 has a function as an etching mask and has a thickness of about 1 μm. The n-side electrode 32 is formed. At this time, an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) are sequentially formed.

  Next, as shown in FIG. 23, the n-type GaAs substrate 21 and the semiconductor layers (22 to 25 and 30) and a circular through hole 120a penetrating the p-side electrode 31 is formed. The through hole 120a is formed to have a tapered inner surface such that the hole diameter on the p-side electrode 31 side is smaller than the hole diameter (several tens of μm) on the n-side electrode 32 side.

Next, as shown in FIG. 24, using the plasma CVD method, the n-side electrode 32 positioned on the inner surface of the through hole 120a and in the region near the through hole 120a is opposite to the n-type GaAs substrate 21. An insulating film 38 made of a SiO ₂ film having a thickness of about 200 nm is formed on the surface.

  Next, as shown in FIG. 25, a resist 40 is formed on a predetermined region other than the region corresponding to the through hole 120a. Thereafter, using an electron beam evaporation method, on the surface of the resist 40 opposite to the n-type GaAs substrate 21 and on the surface of the insulating film 38 opposite to the n-type GaAs substrate 21 and the inner surface, An external connection electrode 39 having a thickness of about 0.3 μm is formed. At this time, a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed. Thereafter, the resist 40 is removed by a lift-off method. As a result, as shown in FIG. 26, a portion unnecessary as the external connection electrode 39 is removed. Thereby, the red laser element 120 of the first embodiment is formed.

  Next, with reference to FIGS. 27 and 28, a method of joining the blue-violet laser element 110 and the red laser element 120 will be described. First, as shown in FIG. 27, a solder layer 115 made of Au—Sn is formed on the p-side electrode 31 of the red laser element 120.

  Next, as shown in FIG. 28, the alignment convex portion constituted by the ridge portion 8 of the blue-violet laser element 110 is in a state of facing downward, and the n-type current blocking layer of the red laser element 120 Positioning is performed by fitting into a positioning recess formed by 30 openings 30a. At this time, the transparent region 111 of the blue-violet laser element 110 shown in FIG. 10 and FIG. 12 is constituted by an alignment convex portion constituted by the ridge portion 8 and an opening portion 30 a of the n-type current blocking layer 30. 28. While recognizing the concave portion for positioning to be visually recognized, the fitting is inserted in the Z direction in FIG. Then, the alignment convex portion constituted by the ridge portion 8 is fitted in the concave portion for alignment constituted by the opening 30 a of the n-type current blocking layer 30, and the temperature condition is about 280 ° C. The solder layer 115 made of Au—Sn is melted by heat treatment. Thereafter, the solder layer 115 is solidified in the cooling process to room temperature, so that the blue-violet laser element 110 and the red laser element 120 are joined by the solder layer 115.

  At this time, in the first embodiment, the positional deviation of the blue-violet laser element 110 and the red laser element 120 in the horizontal direction (the X direction in FIGS. 1 and 2) is an alignment convex portion formed by the ridge portion 8. Can be suppressed by fitting with a recess for alignment formed by the opening 30a of the n-type current blocking layer 30. Thereby, it is possible to prevent the cleavage directions of the blue-violet laser element 110 and the red laser element 120 from being shifted from each other.

  Thereafter, the blue-violet laser element 110 and the red laser element 120 bonded to each other are simultaneously cleaved to form the light emission surface 12 (see FIG. 1), and then separated into each element. Finally, as shown in FIG. 1 and FIG. 2, the integrated semiconductor laser according to the first embodiment is formed by bonding wires 122 on the surfaces of the n-side electrode 32 and the external connection electrode 39 of the red laser element 120. An element is formed.

(Second Embodiment)
FIG. 29 is a plan view showing the structure of an integrated semiconductor laser device according to the second embodiment of the present invention, and FIG. 30 is a cross-sectional view taken along the line 400-400 in FIG. 29 and 30, in the second embodiment, unlike the first embodiment, the blue-violet laser element is provided with an alignment recess, and the red laser element is provided with an alignment protrusion. The case where it provides is demonstrated.

  In the second embodiment, as shown in FIG. 30, a blue-violet laser element 130 having a positioning concave portion and a red laser element 140 having a positioning convex portion are stacked (integrated) in the Z direction. Has a structured. The blue-violet laser element 130 and the red laser element 140 are examples of the “first semiconductor laser element” and the “second semiconductor laser element” in the present invention, respectively.

  First, the structure of the blue-violet laser element 130 of the second embodiment will be described. In the blue-violet laser device 130 of the second embodiment, as shown in FIG. 30, an n-type cladding layer 2, an active layer 3, a light guide layer 4, a cap layer 5, and a p-type cladding layer are formed on an n-type GaN substrate 1. 6 and p-type contact layer 7 are sequentially formed. The p-type cladding layer 6 has a convex part and a flat part other than the convex part, and the p-type contact layer 7 is formed on the convex part of the p-type cladding layer 6. A ridge portion 8 is constituted by the p-type contact layer 7 and the convex portion of the p-type cladding layer. Each semiconductor layer (2-7) has the same composition and thickness as each semiconductor layer (2-7) of the first embodiment. The ridge portion 8 has the same shape as the ridge portion 8 of the first embodiment. The peripheral portion of the active layer 3 below the ridge portion 8 becomes the light emitting region 13 of the blue-violet laser element 130. The ridge portion 8 is an example of the “second ridge portion” in the present invention.

  In the second embodiment, the p-side electrode 41 having a thickness of about 10 nm is formed only on the ridge portion 8 (p-type contact layer 7). The p-side electrode 41 includes a Pt layer (not shown) and a Pd layer (not shown) in this order from the n-type GaN substrate 1 side.

Here, in the second embodiment, the p-side electrode 41 is formed from the upper surface of the flat portion of the p-type cladding layer 6 so as to cover the ridge portion 8 and the side surfaces of the p-side electrode 41 on the flat portion of the p-type cladding layer 6. A current blocking layer 42 made of a SiO ₂ film having a thickness (about 1.5 μm) larger than the height (about 363 nm) up to the upper surface of the silicon oxide film and being easily etched for forming a recess is formed. The current blocking layer 42 has an opening 42a through which the upper surface of the p-side electrode 41 is exposed. Further, the opening 42a of the current blocking layer 42 has a concave taper shape such that the width on the bottom side (the width of the tip portion of the ridge 8 (about 1.5 μm)) is smaller than the width on the open end side. It has a side. Further, as shown in FIG. 29, the opening 42 a of the current blocking layer 42 is formed in a stripe shape (elongated shape) extending in the Y direction along the ridge portion 8. And the opening part 42a of the current block layer 42 becomes a U-shaped recessed part for alignment. In addition, as shown in FIG. 30, the depth (the depth from the upper surface of the current blocking layer 42 to the upper surface of the p-side electrode 41) D2 of the alignment concave portion formed by the opening 42a of the current blocking layer 42 is , About 1.14 μm. The opening 42a is an example of the “concave portion” in the present invention.

  An n-side electrode 11 having the same composition and thickness as the n-side electrode 11 of the first embodiment is formed on the back surface of the n-type GaN substrate 1.

  Next, the structure of the red laser element 140 of the second embodiment will be described. In the red laser element 140 of FIG. 30, the ridge portion 54 side faces downward. In the red laser element 140 of the second embodiment, as shown in FIG. 30, an n-type buffer layer 22, an n-type cladding layer 23, and an active layer 24 are formed on the surface of the n-type GaAs substrate 21 on the blue-violet laser element 130 side. And the p-type 1st clad layer 25 is formed in order. The semiconductor layers (22 to 25) have the same composition and thickness as the semiconductor layers (22 to 25) of the first embodiment.

  In the second embodiment, the same composition and thickness as the p-type second cladding layer 26 of the first embodiment are formed in a predetermined region on the surface of the p-type first cladding layer 25 on the blue-violet laser element 130 side. And a convex p-type second cladding layer 51 having a tip portion width smaller than the tip portion width (about 2.7 μm) of the p-type second cladding layer 26 of the first embodiment. ing. A p-type intermediate layer 52 and a p-type contact layer 53 are sequentially formed on the surface of the p-type second cladding layer 51 on the blue-violet laser element 130 side. The p-type intermediate layer 52 and the p-type contact layer 53 have the same composition and thickness as the p-type intermediate layer 27 and the p-type contact layer 28 of the first embodiment, respectively. The p-type second cladding layer 51, the p-type intermediate layer 52, and the p-type contact layer 53 constitute a ridge portion 54.

  Here, in the second embodiment, the ridge portion 54 has a tapered side surface such that the width on the tip portion side becomes smaller than the width on the root portion side. The angle θ4 formed by the side surface of the ridge portion 54 and the surface of the active layer 24 is about 60 °. Further, as shown in FIG. 29, the ridge portion 54 is formed in a stripe shape (elongated shape) extending in a direction (Y direction) orthogonal to the light emitting surface (cleavage surface) 43. The ridge portion 54 becomes a convex portion for alignment. Further, as shown in FIG. 30, the peripheral portion of the active layer 24 corresponding to the formation position of the ridge portion 54 becomes the light emitting region 57 of the red laser element 140. The ridge portion 54 is an example of the “convex portion” and the “first ridge portion” in the present invention. The light emitting area 57 is an example of the “second light emitting area” in the present invention.

  On the surface of the p-type first cladding layer 25 on the blue-violet laser element 130 side, a portion located on a region other than the side surface of the ridge portion 54 has a thickness of about 800 nm so as to cover the side surface of the ridge portion 54. An n-type current blocking layer 55 is formed. The n-type current blocking layer 55 includes an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) in this order from the n-type GaAs substrate 21 side. Further, the p-side electrode 56 having a thickness of about 0.3 μm is formed so as to cover the surface of the ridge portion 54 and the n-type current blocking layer 55 on the blue-violet laser element 130 side and to cover a part of the side surface of the ridge portion 54. Is formed. The p-side electrode 56 includes an AuZn layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 21 side. Thus, the protrusion height of the alignment convex portion constituted by the ridge portion 54 (from the surface on the blue-violet laser element 130 side of the p-side electrode 56 located in a region other than the region corresponding to the ridge portion 54 to the ridge portion) The height H2 of the p-side electrode 56 located in the region corresponding to 54 to the surface on the blue-violet laser element 130 side is about 800 nm. That is, the depth D2 (about 1.14 μm) of the alignment concave portion formed by the opening 42a of the current blocking layer 42 is the protrusion height H2 of the alignment convex portion formed by the ridge portion 54 ( Larger than about 800 nm). An n-side electrode 32 having the same composition and thickness as the n-side electrode 32 of the first embodiment is formed on the surface of the n-type GaAs substrate 21 opposite to the blue-violet laser element 130. .

A circular shape penetrating the n-side electrode 32, the n-type GaAs substrate 21, the semiconductor layers (22 to 25 and 55) and the p-side electrode 56 from the surface of the n-side electrode 32 opposite to the blue-violet laser element 130. The through hole 140a is formed. The through-hole 140a has a tapered inner surface whose diameter on the n-side electrode 32 side is several tens of μm, and the hole diameter on the p-side electrode 56 side is smaller than the hole diameter on the n-side electrode 32 side. Have On the inner surface of the through hole 140a and on the surface opposite to the blue-violet laser element 130 of the n-side electrode 32 located in the region in the vicinity of the through hole 140a, an insulation made of a SiO ₂ film having a thickness of about 200 nm A film 58 is formed. In a predetermined region on the insulating film 58, an external connection electrode 59 having a thickness of about 0.3 μm is formed so as to be electrically connected to a solder layer 135 to be described later through the through hole 140a. The external connection electrode 59 includes a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 21 side. A wire (gold wire) 122 is bonded on the surface of the n-side electrode 32 and the external connection electrode 59 opposite to the blue-violet laser element 130.

  Here, in the second embodiment, as shown in FIG. 30, the red laser element 140 and the blue-violet laser element 130 have an alignment convex portion formed by the ridge portion 54 and an opening of the current blocking layer 42. It is integrated (laminated) in the Z direction in a state in which it is fitted into a positioning recess formed by the portion 42a. Further, the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 30). Further, as described above, the depth D2 (about 1.14 μm) of the concave portion for alignment of the blue-violet laser element 120 is the protrusion height H2 (about 800 nm) of the convex portion for alignment of the red laser element 140. Therefore, the distance between the bottom surface of the concave portion for alignment of the blue-violet laser element 130 and the top surface of the convex portion for alignment of the red laser element 140 is other than the concave portion for alignment of the blue-violet laser element 130. And an interval between the red laser element 140 and a region other than the convex portion for alignment. Further, the alignment concave portion of the blue-violet laser element 130 and the alignment convex portion of the red laser element 140 are joined via a solder layer 135 made of Au—Sn. The solder layer 135 is an example of the “bonding layer” in the present invention. The p-side electrode 41 of the blue-violet laser element 140 and the p-side electrode 56 of the red laser element 140 are electrically connected to the external connection electrode 59 through the solder layer 135.

  In the second embodiment, as described above, the alignment recess formed by the opening 42 a of the current blocking layer 42 of the blue-violet laser element 130 is aligned with the ridge 54 of the red laser element 140. The blue-violet laser element 130 and the red laser element when the blue-violet laser element 130 and the red laser element 140 are bonded together by fitting the convex part for positioning and the concave part. The positional deviation in the horizontal direction 140 (X direction in FIG. 30) can be suppressed. As a result, the optical axis of the emitted light from the blue-violet laser element 130 and the optical axis of the emitted light from the red laser element 140 can be prevented from shifting in the horizontal direction (X direction in FIG. 30). It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the type semiconductor laser element is made incident on the optical system (lens, mirror, etc.). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the positional deviation in the horizontal direction (X direction in FIG. 30) of the blue-violet laser element 130 and the red laser element 140 when the blue-violet laser element 130 and the red laser element 140 are bonded together can be suppressed. It is possible to suppress the cleavage directions of the violet laser element 130 and the red laser element 140 from being shifted from each other. Thereby, the cleavage property when the blue-violet laser element 130 and the red laser element 140 are bonded together and then simultaneously cleaved can be improved. As a result, the characteristics of the laser light emitted from the light emitting surface (cleavage surface) 43 can be improved.

  In the second embodiment, the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 30). The positions of the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140 are shifted in two directions (semiconductor layer stacking direction (Z direction in FIG. 30) and horizontal direction (X direction in FIG. 30)). Compared to the case, the distance between the positions of the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140 can be reduced. Accordingly, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light is emitted from one of the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140. When the optical axis is adjusted so that the emitted light is incident on a predetermined region of the optical system, the light emitted from the other of the light emitting region 13 of the blue-violet laser element 130 and the light emitting region 57 of the red laser element 140 is optical. It can suppress entering into the area | region which remove | deviated largely from the predetermined area | region of the system. As a result, the optical axis adjustment with respect to the optical system becomes easier, so that the cost for the optical axis adjustment can be further reduced.

  The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

  FIGS. 31 to 50 are a plan view and a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser device according to the second embodiment shown in FIGS. 29 and 30. FIGS. A manufacturing process for the integrated semiconductor laser device according to the second embodiment is now described with reference to FIGS.

  In the second embodiment, the blue-violet laser element 130 is formed by the processes shown in FIGS. 31 to 39, and the red laser element 140 is formed by the processes shown in FIGS. When forming the blue-violet laser element 130, first, as shown in FIG. 32, up to the p-type contact layer 7 is formed using the same process as in the first embodiment shown in FIG. Thereafter, the p-side electrode 41 having a thickness of about 10 nm is formed on the p-type contact layer 7 by using an electron beam evaporation method. At this time, a Pt layer (not shown) and a Pd layer (not shown) are sequentially formed. Further, as shown in FIG. 31, the end portion of the p-side electrode 41 located on the side of the end surface 1 a parallel to the light emitting surface 43 (see FIG. 29) of the n-type GaN substrate 1 is the end surface 1 a of the n-type GaN substrate 1. Are arranged in a region separated by a predetermined interval.

Next, as shown in FIG. 33, an Al ₂ O ₃ film 44 having a thickness of about 320 nm and a SiO ₂ film 45 having a thickness of about 480 nm are formed on the p-side electrode 41 by using a plasma CVD method. Sequentially formed. Thereafter, a striped (elongated) resist 46 having a width of about 1.5 μm is formed in a region corresponding to the ridge portion 8 (see FIG. 30) on the SiO ₂ film 45.

Next, as shown in FIG. 34, the SiO ₂ film 45, the Al ₂ O ₃ film 44, and the p-side electrode 41 are etched using the resist 46 as a mask by RIE using CF ₄ gas. Thereafter, the resist 46 is removed.

Next, as shown in FIG. 35, etching is performed from the upper surface of the p-type contact layer 7 to a depth in the middle of the p-type cladding layer 6 using the SiO ₂ film 45 as a mask by using the RIE method using a chlorine-based gas. As a result, the ridge portion 8 having the same shape as that of the ridge portion 8 of the first embodiment is formed, including the convex portion of the p-type cladding layer 6 and the p-type contact layer 7.

Next, as shown in FIG. 36, etching is performed from the side surface of the Al ₂ O ₃ film 44 to a predetermined depth in the lateral direction using a phosphoric acid wet etching technique.

Next, as shown in FIG. 37, a plasma CVD method, an electron beam evaporation method, or the like is used to cover the ridge portion 8 and the side surface of the p-side electrode 41 on the flat portion of the p-type cladding layer 6. A current blocking layer 42 made of a SiO ₂ film having a thickness of 1.5 μm is formed. Thereafter, the Al ₂ O ₃ film 44 is removed using a wet etching technique using a phosphoric acid-based etching solution. At this time, the SiO ₂ film 45 on the Al ₂ O ₃ film 44 and a part of the current blocking layer 42 made of the SiO ₂ film located in the vicinity of the SiO ₂ film 45 are also removed at the same time. As a result, as shown in FIG. 38, the current blocking layer 42 having the opening 42a through which the upper surface of the p-side electrode 41 is exposed is formed. At this time, the opening 42a of the current blocking layer 42 is formed to have a concave tapered inner surface whose width on the bottom side is smaller than the width on the open end side. The width on the bottom side of the opening 42a of the current blocking layer 42 is about 1.5 μm. Further, the opening 42a of the current blocking layer 42 is formed in a stripe shape (elongated shape) along the ridge portion 8, as shown in FIG. And the opening part 42a of this electric current block layer 42 becomes a U-shaped recessed part for alignment. In addition, the depth (the depth from the upper surface of the current blocking layer 42 to the upper surface of the p-side electrode 41) D2 of the alignment concave portion constituted by the opening 42a of the current blocking layer 42 is about 1.14 μm. .

  Next, as shown in FIG. 39, the back surface of the n-type GaN substrate 1 is polished until the thickness from the upper surface of the ridge portion 8 to the back surface of the n-type GaN substrate 1 becomes about 150 μm. Thereafter, the n-side electrode 11 having the same composition and thickness as the n-side electrode 11 of the first embodiment is formed on the back surface of the n-type GaN substrate 1 by using an electron beam evaporation method. At this time, similarly to the process of the first embodiment shown in FIG. 12, the end portion of the n-side electrode 11 located on the end surface 1a (see FIG. 31) side parallel to the light emitting surface 43 of the n-type GaN substrate 1 is The n-type GaN substrate 1 is arranged in a region spaced from the end face 1a of the n-type GaN substrate 1 by a predetermined distance. As a result, as shown in FIG. 31, the region where the p-side electrode 41 is not formed is a region where the ridge portion 8 of the blue-violet laser element 130 is formed when the blue-violet laser element 130 and the red laser element 140 are bonded. It becomes the transparent area | region 111 which can be visually recognized from the upper direction or the downward direction. In this way, the blue-violet laser element 130 of the second embodiment is formed.

Next, when forming the red laser element 140, first, as shown in FIG. 40, the process up to the p-type first cladding layer 25 is formed using the same process as in the first embodiment shown in FIG. To do. Subsequently, the p-type second clad layer 51, the p-type intermediate layer 52, and the p-type contact layer 53 are sequentially grown on the p-type first clad layer 25 by using the MOCVD method. At this time, the p-type second cladding layer 51, the p-type intermediate layer 52, and the p-type contact layer 53 are combined with the p-type second cladding layer 26, the p-type intermediate layer 27, and the p-type contact layer 28 of the first embodiment. Grow under similar growth conditions. Thereafter, in a region corresponding to the ridge portion 54 (see FIG. 30) on the p-type contact layer 53 using a sputtering method, a vacuum evaporation method, or an electron beam evaporation method, a stripe shape (elongated shape) having a thickness of about 240 nm is formed. ) SiO ₂ film 47 is formed.

  Next, as shown in FIG. 41, etching is performed from the upper surface of the p-type contact layer 53 to the upper surface of the p-type first cladding layer 25 by using a wet etching technique with a tartaric acid-based etching solution or a phosphoric acid-based etching solution. As a result, a ridge portion 54 including the p-type contact layer 53, the p-type intermediate layer 52, and the p-type second cladding layer 51 is formed. At this time, the ridge portion 54 is formed to have a tapered side surface in which the width on the tip portion side is smaller than the width on the root portion side. The angle θ4 formed by the side surface of the ridge portion 54 and the upper surface of the active layer 24 (p-type first cladding layer 25) is about 60 °. Further, as shown in FIG. 29, the ridge portion 54 is formed in a stripe shape (elongated shape) extending in a direction orthogonal to the light emitting surface 43. And this ridge part 54 becomes a convex part for position alignment.

Next, as shown in FIG. 42, using the MOCVD method, using the SiO ₂ film 59 as a selective growth mask, the ridge portion is formed on the upper surface of the p-type first cladding layer 25 so as to cover the side surface of the ridge portion 54. An n-type current blocking layer 55 having a thickness of about 800 nm in a portion located on a region other than the side surface of 54 is formed. At this time, an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) are sequentially formed. Thereafter, the SiO ₂ film 47 is removed.

  Next, as shown in FIG. 43, about 0.3 μm is formed so as to cover the upper surface of the ridge portion 54 and the n-type current blocking layer 55 and a part of the side surface of the ridge portion 54 by using an electron beam evaporation method. A p-side electrode 56 having a thickness of 1 mm is formed. At this time, an AuZn layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed. Thereby, the protruding height of the alignment convex portion constituted by the ridge portion 54 (p-side electrode located on the upper surface of the ridge portion 54 from the upper surface of the p-side electrode 56 located on the upper surface of the current blocking layer 55) The height to the upper surface 56) H2 is about 800 nm. That is, the depth D2 (about 1.14 μm) of the alignment concave portion formed by the opening 42a of the current blocking layer 42 is the protrusion height H2 of the alignment convex portion formed by the ridge portion 54 ( Larger than about 800 nm) (see FIG. 30).

  Next, as shown in FIG. 44, the back surface of the n-type GaAs substrate 21 is polished until the thickness from the upper surface of the ridge portion 54 to the back surface of the n-type GaAs substrate 21 becomes about 100 μm. Thereafter, using the electron beam evaporation method, the first embodiment also has a function as an etching mask on a region other than the formation region of the through hole 140a (see FIG. 30) on the back surface of the n-type GaAs substrate 21. The n-side electrode 32 having the same composition and thickness as the n-side electrode 32 is formed.

  Next, as shown in FIG. 45, the n-type GaAs substrate 21 and the semiconductor layers (22 to 25 and 55) and a circular through hole 140a penetrating the p-side electrode 56 is formed. The through hole 140a is formed to have a tapered inner surface such that the hole diameter on the p-side electrode 56 side is smaller than the hole diameter (several tens of μm) on the n-side electrode 32 side.

Next, as shown in FIG. 46, the plasma CVD method is used to place the n-side electrode 32 on the opposite side of the n-type GaAs substrate 21 on the inner surface of the through hole 140a and in the region near the through hole 140a. An insulating film 58 made of a SiO ₂ film having a thickness of about 200 nm is formed on the surface.

  Next, as shown in FIG. 47, a resist 60 is formed on a predetermined region other than the region corresponding to the through hole 140a. Thereafter, the surface of the resist 60 on the side opposite to the n-type GaAs substrate 21 and the surface of the insulating film 58 on the side opposite to the n-type GaAs substrate 21 and the inner side surface are formed using electron beam evaporation. An external connection electrode 59 having a thickness of about 0.3 μm is formed. At this time, a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed. Thereafter, the resist 60 is removed by a lift-off method. Thereby, as shown in FIG. 48, a portion unnecessary as the external connection electrode 59 is removed. Thereby, the red laser element 140 of the second embodiment is formed.

  Next, a method for joining the blue-violet laser element 130 and the red laser element 140 will be described with reference to FIGS. 49 and 50. First, as shown in FIG. 49, a solder layer 135 made of Au—Sn is formed on the p-side electrode 56 of the red laser element 140.

  Next, as shown in FIG. 50, the alignment concave portion formed by the opening 42a of the current blocking layer 42 of the blue-violet laser element 130 is turned downward, and the ridge of the red laser element 140 is formed. Positioning is performed by fitting into a positioning convex portion constituted by the portion 54. At this time, from the transparent region 111 of the blue-violet laser element 130 shown in FIG. 31, the alignment concave portion constituted by the opening 42 a of the current blocking layer 42 and the alignment convexity constituted by the ridge portion 54. The part is fitted in the Z direction while visually recognizing the part. Then, in a state where the alignment convex portion constituted by the ridge portion 54 is fitted in the alignment concave portion constituted by the opening 42 a of the current blocking layer 42, heat treatment is performed under a temperature condition of about 280 ° C. As a result, the solder layer 135 made of Au—Sn is melted. Thereafter, the solder layer 135 is solidified in the cooling process to room temperature, so that the blue-violet laser element 130 and the red laser element 140 are joined by the solder layer 135.

  At this time, in the second embodiment, the position of the blue-violet laser element 130 and the red laser element 140 in the horizontal direction (the X direction in FIGS. 29 and 30) is defined by the opening 42a of the current blocking layer 42. This can be suppressed by fitting the concave portion for alignment with the convex portion for alignment constituted by the ridge portion 54. Thereby, it is possible to suppress the cleavage directions of the blue-violet laser element 130 and the red laser element 140 from deviating from each other.

  Thereafter, the blue-violet laser element 130 and the red laser element 140 bonded to each other are simultaneously cleaved to form the light emitting surface 43 (see FIG. 29), and then separated into each element. Finally, as shown in FIGS. 29 and 30, the integrated semiconductor laser according to the second embodiment is formed by bonding wires 122 on the surfaces of the n-side electrode 32 and the external connection electrode 59 of the red laser element 140. An element is formed.

(Third embodiment)
51 is a plan view showing the structure of an integrated semiconductor laser device according to the third embodiment of the present invention, and FIG. 52 is a cross-sectional view taken along the line 600-600 in FIG. Referring to FIGS. 51 and 52, in the third embodiment, unlike the first and second embodiments, the blue-violet laser element is provided with a convex portion for alignment and positioned on the substrate of the red laser element. The case where the recessed part for alignment is formed is demonstrated.

  In the third embodiment, as shown in FIG. 52, a blue-violet laser element 110 having a convex portion for alignment and a red laser element 150 having a concave portion for alignment are stacked (integrated) in the Z direction. Has a structured. The blue-violet laser element 110 has the same structure as the blue-violet laser element 110 of the first embodiment. The red laser element 150 is an example of the “second semiconductor laser element” in the present invention.

  First, the structure of the red laser element 150 of the third embodiment will be described. In the red laser device 150 of the third embodiment, as shown in FIG. 52, an n-type buffer layer 22, an n-type cladding layer 23, an active layer 24, a p-type first cladding layer 25, A p-type second cladding layer 51, a p-type intermediate layer 52, and a p-type contact layer 53 are sequentially formed. The p-type second cladding layer 51 has a convex part and a flat part other than the convex part, and the p-type intermediate layer 52 and the p-type contact layer 53 are sequentially formed on the convex part of the p-type second cladding layer 51. Is formed. A ridge portion 54 is formed by the p-type contact layer 53, the p-type intermediate layer 52, and the p-type second cladding layer 51. In addition, each semiconductor layer (22-25, 51-53) has the composition and thickness similar to each semiconductor layer (22-25, 51-53) of the said 2nd Embodiment. The ridge portion 54 has the same shape as the ridge portion 54 of the second embodiment. The peripheral portion of the active layer 24 below the ridge portion 54 becomes the light emitting region 57 of the red laser element 150.

  In the third embodiment, the n-type current blocking layer 62 having a thickness of about 1.6 μm is formed on the p-type first cladding layer 25 so as to cover the side surface of the ridge portion 54. The n-type current blocking layer 62 includes an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) in this order from the n-type GaAs substrate 61 side. A p-side electrode 63 having the same composition and thickness as the p-side electrode 56 of the second embodiment is formed on the top surfaces of the n-type current blocking layer 62 and the ridge portion 54 (p-type contact layer 53). .

Further, a circular through hole 150 a penetrating the p-side electrode 63, the semiconductor layers (62, 25 to 22) and the n-type GaAs substrate 61 is formed from the upper surface of the p-side electrode 63. The through hole 150a has a diameter of several tens of μm on the p-side electrode 63 side, and has a tapered shape such that the hole diameter on the n-type GaAs substrate 61 side is smaller than the hole diameter on the p-side electrode 63 side. It has a side. An insulating film 68 made of a SiO ₂ film having a thickness of about 200 nm is formed on the inner surface of the through hole 150a and on the surface of the p-side electrode 63 located in the region near the through hole 150a. In a predetermined region on the insulating film 68, an external connection electrode 69 having a thickness of about 0.3 μm is formed so as to be electrically connected to an n-side electrode 64 described later through the through hole 150a. The external connection electrode 69 includes a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 61 side. A wire (gold wire) 122 is bonded on the surface of the p-side electrode 63 and the external connection electrode 69.

  Here, in the third embodiment, a recess 61 a having a depth of about 1 μm is formed in a region corresponding to the ridge portion 54 on the back side of the n-type GaAs substrate 61. The concave portion 61a of the n-type GaAs substrate 61 has a tapered inner surface such that the width on the bottom side becomes smaller than the width on the open end side (about 3 μm). The angle θ5 formed by the inner surface of the recess 61a of the n-type GaAs substrate 61 and the surface of the active layer 24 is about 60 °. Further, as shown in FIG. 51, the recess 61a of the n-type GaAs substrate 61 is formed in a stripe shape (elongated shape) extending in the Y direction along the ridge portion. Then, the recess 61a of the n-type GaAs substrate 61 becomes a recess for alignment. The n-type GaAs substrate 61 is an example of the “substrate” in the present invention.

  An n-side electrode 64 having a thickness of about 0.3 μm is formed on the back surface including the recess 61 a of the n-type GaAs substrate 61 so as to be electrically connected to the external connection electrode 69. The n-side electrode 64 includes an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 61 side. Accordingly, the depth of the concave portion for alignment formed by the concave portion 61a of the n-type GaAs substrate 61 (corresponding to the concave portion 61a from the surface on the blue-violet laser element 110 side of the n-side electrode 64 located in a region other than the concave portion 61a). The depth (D3 to the surface on the blue-violet laser element 110 side) of the n-side electrode 64 located in the region to be) is about 1 μm. That is, the depth D3 (about 1 μm) of the concave portion for alignment constituted by the concave portion 61a of the n-type GaAs substrate 61 is the protrusion height H1 (about 153 nm) of the convex portion for alignment constituted by the ridge portion 8. Bigger than).

  Here, in the third embodiment, as shown in FIG. 52, the blue-violet laser element 110 and the red laser element 150 have an alignment convex portion formed by the ridge portion 8 of the n-type GaAs substrate 61. It is integrated (laminated) in the Z direction in a state in which it is fitted into a positioning recess formed by the recess 61a. Further, the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 52). Further, as described above, the depth D3 (about 1 μm) of the alignment concave portion of the red laser element 150 is larger than the protrusion height H1 (153 nm) of the alignment convex portion of the blue-violet laser element 110. Therefore, the distance between the upper surface of the alignment convex portion of the blue-violet laser element 110 and the bottom surface of the alignment concave portion of the red laser element 150 is a region other than the alignment convex portion of the blue-violet laser element 110. And the interval between the red laser element 150 and a region other than the concave portion for alignment. The alignment convex portion of the blue-violet laser element 110 and the alignment concave portion of the red laser element 150 are joined via a solder layer 155 made of Au—Sn. The solder layer 155 is an example of the “bonding layer” in the present invention. Further, the p-side electrode 10 of the blue-violet laser element 110 is electrically connected to the external connection electrode 69 through the n-side electrode 64 of the red laser element 150 and the solder layer 155.

  In the third embodiment, as described above, the alignment convex portion constituted by the ridge portion 8 of the blue-violet laser element 110 is the position constituted by the concave portion 61 a of the n-type GaAs substrate 61 of the red laser element 150. The blue-violet laser element 110 and the red laser element when the blue-violet laser element 110 and the red laser element 150 are bonded together by fitting the concave portion for alignment and the concave portion by fitting. The positional deviation in the horizontal direction 150 (X direction in FIG. 52) can be suppressed. As a result, the optical axis of the emitted light from the blue-violet laser element 110 and the optical axis of the emitted light from the red laser element 150 can be prevented from shifting in the horizontal direction (X direction in FIG. 52). It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the type semiconductor laser element is made incident on the optical system (lens, mirror, etc.). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the positional deviation in the horizontal direction (X direction in FIG. 52) of the blue-violet laser element 110 and the red laser element 150 when the blue-violet laser element 110 and the red laser element 150 are bonded together can be suppressed. It is possible to prevent the cleavage directions of the violet laser element 110 and the red laser element 150 from deviating from each other. Thereby, it is possible to improve the cleavage property when the blue-violet laser element 110 and the red laser element 150 are bonded together and then simultaneously cleaved. As a result, the characteristics of the laser light emitted from the light emitting surface (cleavage surface) 58 can be improved.

  In the third embodiment, the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 52). The positions of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150 are shifted in two directions (semiconductor layer stacking direction (Z direction in FIG. 52) and horizontal direction (X direction in FIG. 52)). Compared to the case, the distance between the positions of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150 can be reduced. Thus, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light is emitted from one of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150. When the optical axis is adjusted so that the emitted light is incident on a predetermined region of the optical system, the light emitted from the other of the light emitting region 13 of the blue-violet laser element 110 and the light emitting region 57 of the red laser element 150 is optical. It can suppress entering into the area | region which remove | deviated largely from the predetermined area | region of the system. As a result, since the optical axis adjustment of the emitted light with respect to the optical system becomes easier, the cost for optical axis adjustment can be further reduced.

  In the third embodiment, by forming the recess 61 a in the n-type GaAs substrate 61 of the red laser element 150, the alignment recess can be easily formed in the red laser element 150.

  The remaining effects of the third embodiment are similar to those of the aforementioned first embodiment.

  53 to 63 are cross-sectional views for explaining a manufacturing process of the integrated semiconductor laser device according to the third embodiment shown in FIGS. A manufacturing process for the integrated semiconductor laser device according to the third embodiment is now described with reference to FIGS. The manufacturing process of the blue-violet laser device 110 of the third embodiment is the same as the process of the first embodiment shown in FIGS.

When forming the red laser element 150, first, as shown in FIG. 53, up to the ridge portion 54 is formed using the same process as in the second embodiment shown in FIGS. Thereafter, an n-type current having a thickness of about 1.6 μm is formed on the p-type first cladding layer 25 so as to cover the side surface of the ridge portion 54 by using the MOCVD method with the SiO ₂ film 47 as a selective growth mask. A block layer 62 is formed. At this time, an n-type AlInP layer (not shown) and an n-type GaAs layer (not shown) are sequentially formed. Thereafter, the SiO ₂ film 47 is removed.

  Next, as shown in FIG. 54, by using the electron beam evaporation method, other than the formation region on the ridge portion 54 (p-type contact layer 53) and the through-hole 150a (see FIG. 52) of the n-type current blocking layer 62. A p-side electrode 63 having a function and an etching mask and having the same composition and thickness as the p-side electrode 56 of the second embodiment is formed on this region.

  Next, as shown in FIG. 55, each of the semiconductor layers (62 and 25 to 22) and the n-type are formed from the upper surface of the n-type current blocking layer 62 using the p-side electrode 63 as a mask by using the RIE method using a chlorine-based gas. A circular through hole 150a penetrating the GaAs substrate 61 is formed. The through hole 150a is formed to have a tapered inner surface such that the hole diameter on the n-type GaAs substrate 61 side is smaller than the hole diameter (several tens of μm) on the p-side electrode 63 side.

Next, as shown in FIG. 56, a plasma CVD method is used to form a SiO ₂ film on the inner surface of the through hole 150a and on the upper surface of the p-side electrode 63 located in the region near the through hole 150a. An insulating film 68 is formed.

  Next, as shown in FIG. 57, a resist 70 is formed on a predetermined region other than the region corresponding to the through hole 150a. Thereafter, an external connection electrode 69 having a thickness of about 0.3 μm is formed on the upper surface of the resist 70 and on the upper surface and inner side surface of the insulating film 68 by using an electron beam evaporation method. At this time, a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed. Thereafter, the resist 70 is removed by a lift-off method. Thereby, as shown in FIG. 58, a portion unnecessary as the external connection electrode 69 is removed.

Next, as shown in FIG. 59, after the back surface of the n-type GaAs substrate 61 is polished until the thickness from the upper surface of the ridge portion 54 to the back surface of the n-type GaAs substrate 61 becomes about 100 μm, plasma CVD is used. An SiO ₂ film 65 having a thickness of about 240 nm is formed in a region other than the region corresponding to the recess 61a (see FIG. 52) on the back surface of the n-type GaAs substrate 61.

Next, as shown in FIG. 60, etching is performed from the back surface of the n-type GaAs substrate 61 to a depth of about 1 μm, using the SiO ₂ film 65 as a mask, using RIE method using chlorine-based gas. As a result, a recess 61 a having a depth of about 1 μm is formed on the back side of the n-type GaAs substrate 61. At this time, the recess 61a of the n-type GaAs substrate 61 is formed so as to have a tapered inner surface such that the width on the bottom side becomes smaller than the width on the open end side. The width on the open end side of the recess 61a of the n-type GaAs substrate 61 is about 3 μm. The angle θ5 formed by the inner side surface of the recess 61a of the n-type GaAs substrate 61 and the surface of the active layer 24 (n-type GaAs substrate 61) is about 60 °. Further, the recess 61a of the n-type GaAs substrate 61 is formed in a stripe shape (elongated shape) along the ridge portion 54 as shown in FIG. Then, the recess 61a of the n-type GaAs substrate 61 becomes a recess for alignment. Thereafter, the SiO ₂ film 65 is removed.

  Next, as shown in FIG. 61, about 0.3 μm is used so as to be electrically connected to the external connection electrode 69 on the back surface including the recess 61a of the n-type GaAs substrate 61 by using the electron beam evaporation method. An n-side electrode 64 having a thickness of 1 mm is formed. At this time, an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) are sequentially formed. Thereby, the depth of the concave portion for alignment constituted by the concave portion 61a of the n-type GaAs substrate 61 (positioned from the upper surface of the n-side electrode 64 located in the region other than the opening portion 61 to the upper surface of the bottom portion of the concave portion 61a. The depth D3 to the upper surface of the n-side electrode 64 is about 1 μm. That is, the depth D3 (about 1 μm) of the concave portion for alignment constituted by the concave portion 61a of the n-type GaAs substrate 61 is the protrusion height H1 (153 nm) of the convex portion for alignment constituted by the ridge portion 8. (See FIG. 52). In this way, the red laser element 150 of the third embodiment is formed.

  Next, with reference to FIGS. 62 and 63, a method of joining the blue-violet laser element 110 and the red laser element 150 will be described. First, as shown in FIG. 62, a solder layer 155 made of Au—Sn is formed on the n-side electrode 64 of the red laser element 150.

  Next, as shown in FIG. 63, the alignment convex portion constituted by the ridge portion 8 of the blue-violet laser element 110 is in a state of facing downward, and the n-type GaAs substrate 61 of the red laser element 150 is placed. Positioning is performed by fitting into a positioning concave portion constituted by the concave portion 61a. At this time, from the transparent region 111 of the blue-violet laser element 110 shown in FIGS. 10 and 12, a position formed by the alignment convex portion constituted by the ridge portion 8 and the concave portion 61 a of the n-type GaAs substrate 61. It fits in the Z direction while visually recognizing the concave portion for alignment. Then, the alignment convex portion formed by the ridge portion 8 is fitted into the alignment concave portion formed by the concave portion 61a of the n-type GaAs substrate 61, and heat treatment is performed at a temperature of about 280 ° C. As a result, the solder layer 155 made of Au—Sn is melted. Thereafter, the solder layer 155 is solidified in the cooling process to room temperature, so that the blue-violet laser element 110 and the red laser element 150 are joined by the solder layer 155.

  At this time, in the third embodiment, the positional deviation of the blue-violet laser element 110 and the red laser element 150 in the horizontal direction (the X direction in FIGS. Can be suppressed by fitting with the concave portion for alignment constituted by the concave portion 61 a of the n-type GaAs substrate 61. Thereby, it is possible to suppress the cleavage directions of the blue-violet laser element 110 and the red laser element 150 from deviating from each other.

  Thereafter, the blue-violet laser element 110 and the red laser element 150 bonded to each other are simultaneously cleaved to form the light emitting surface 58 (see FIG. 51), and then separated into each element. Finally, as shown in FIGS. 51 and 52, the wires 122 are bonded onto the surfaces of the p-side electrode 63 and the external connection electrode 69 of the red laser element 150, whereby the integrated semiconductor laser according to the third embodiment. An element is formed.

(Fourth embodiment)
64 is a plan view showing the structure of an integrated semiconductor laser device according to the fourth embodiment of the present invention, and FIG. 65 is a cross-sectional view taken along the line 700-700 in FIG. Referring to FIGS. 64 and 65, in the fourth embodiment, unlike the first to third embodiments, a convex portion for alignment is formed on the substrate of the blue-violet laser element, and the red laser element A case where a recess for alignment is formed on the substrate will be described.

  In the fourth embodiment, as shown in FIG. 65, a blue-violet laser element 160 having a convex portion for alignment and a red laser element 150 having a concave portion for alignment are stacked (integrated) in the Z direction. Has a structured. The red laser element 150 has the same structure as the red laser element 150 of the third embodiment. The blue-violet laser element 160 is an example of the “first semiconductor laser element” in the present invention.

  First, the structure of the blue-violet laser element 160 of the fourth embodiment will be described. In the blue-violet laser device 160 of the fourth embodiment, as shown in FIG. 65, an n-type cladding layer 2, an active layer 3, a light guide layer 4, a cap layer 5, and a p-type cladding layer are formed on an n-type GaN substrate 71. 6 and p-type contact layer 7 are sequentially formed. The p-type cladding layer 6 has a convex portion and a flat portion other than the convex portion, and the p-type contact layer 7 is formed on the convex portion of the p-type cladding layer 6. A ridge portion 8 is constituted by the p-type contact layer 7 and the convex portion of the p-type cladding layer 6. Each semiconductor layer (2-7) has the same composition and thickness as each semiconductor layer (2-7) of the first embodiment. The ridge portion 8 has the same shape as the ridge portion 8 of the first embodiment. The peripheral portion of the active layer 3 below the ridge portion 8 becomes the light emitting region 13 of the blue-violet laser element 160.

  Further, a current blocking layer 9 having the same composition and thickness as the current blocking layer 9 of the first embodiment is formed so as to cover the side surface of the ridge portion 8 and the upper surface of the flat portion of the p-type cladding layer 6. . A p-side electrode 10 having the same composition and thickness as the p-side electrode 10 of the first embodiment is formed on the current blocking layer 9 so as to be in contact with the upper surface of the ridge portion 8 (p-type contact layer 7). Has been.

  Here, in the fourth embodiment, a convex portion 71 a having a protruding height of about 400 nm is formed in a region corresponding to the ridge portion 8 on the back surface side of the n-type GaN substrate 71. The convex portion 71a of the n-type GaN substrate 71 has a tapered side surface such that the width of the tip portion is smaller than the width of the root portion. The angle θ6 formed between the side surface of the convex portion 71a of the n-type GaN substrate 71 and the upper surface of the active layer 3 is about 80 °. The width of the tip portion of the convex portion 71a of the n-type GaN substrate 71 is about 2 μm. Further, as shown in FIG. 64, the convex portion 71 a of the n-type GaN substrate 71 is formed in a stripe shape (elongated shape) in the Y direction along the ridge portion 8. And the convex part 71a of the n-type GaAs substrate 71 becomes a convex part for alignment. The n-type GaAs substrate 71 is an example of the “substrate” in the present invention.

  An n-side electrode 72 is formed on the back surface of the n-type GaN substrate 71 including the convex portion 71a. The n-side electrode 72 includes, in order from the n-type GaN substrate 71 side, an Al layer (not shown) having a thickness of about 6 nm, a Pd layer (not shown) having a thickness of about 10 nm, and a thickness of about 300 nm. And an Au layer (not shown). Thereby, the protrusion height of the alignment convex portion constituted by the convex portion 71a of the n-type GaN substrate 71 (from the upper surface of the n-side electrode 72 located in the region other than the convex portion 71a to the upper surface of the convex portion 71a. The protruding height (H4) up to the upper surface of the n-side electrode 72 is about 400 nm. That is, the depth D3 (about 1 μm) of the alignment concave portion constituted by the concave portion 61a of the n-type GaAs substrate 61 is the protrusion height H4 of the alignment convex portion constituted by the n-type GaN substrate 71 ( Larger than about 400 nm).

  Here, in the fourth embodiment, as shown in FIG. 65, the blue-violet laser element 160 and the red laser element 150 include a convex portion for alignment constituted by the convex portion 71 a of the n-type GaN substrate 71. The n-type GaAs substrate 61 is integrated (laminated) in the Z direction in a state of being fitted into a positioning recess formed by the recess 61a. Further, the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 65). In addition, as described above, the depth D3 (about 1 μmm) of the alignment concave portion of the red laser element 150 is larger than the protrusion height H4 (about 400 nm) of the alignment convex portion of the blue-violet laser element 160. Therefore, the distance between the upper surface of the convex portion for alignment of the blue-violet laser element 160 and the bottom surface of the concave portion for alignment of the red laser element 150 is other than the convex portion for alignment of the blue-violet laser element 160. The distance between the region and the region other than the concave portion for alignment of the red laser element 150 is larger. Further, the alignment convex portion of the blue-violet laser element 160 and the alignment concave portion of the red laser element 150 are joined via a solder layer 165 made of Au—Sn. The solder layer 165 is an example of the “bonding layer” in the present invention. Further, the n-side electrode 72 of the blue-violet laser element 160 is electrically connected to the external connection electrode 69 through the n-side electrode 64 of the red laser element 150 and the solder layer 165.

  In the fourth embodiment, as described above, the alignment convex portion formed by the convex portion 71 a of the n-type GaN substrate 71 of the blue-violet laser element 160 is used as the concave portion of the n-type GaAs substrate 61 of the red laser element 150. The blue-violet laser when the blue-violet laser element 160 and the red laser element 150 are bonded together by fitting the concave portion for positioning and the concave portion by fitting into the concave portion for positioning constituted by 61a. The positional deviation of the element 160 and the red laser element 150 in the horizontal direction (X direction in FIG. 65) can be suppressed. As a result, the optical axis of the emitted light from the blue-violet laser element 160 and the optical axis of the emitted light from the red laser element 150 can be prevented from shifting in the horizontal direction (X direction in FIG. 65). It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the type semiconductor laser element is made incident on the optical system (lens, mirror, etc.). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the positional deviation in the horizontal direction (X direction in FIG. 65) of the blue-violet laser element 160 and the red laser element 150 when the blue-violet laser element 160 and the red laser element 150 are bonded together can be suppressed. It is possible to prevent the cleavage directions of the purple laser element 160 and the red laser element 150 from being shifted from each other. Thereby, it is possible to improve the cleavage property when the blue-violet laser element 160 and the red laser element 150 are bonded together and then simultaneously cleaved. As a result, the characteristics of the laser beam emitted from the light emitting surface (cleavage surface) 73 can be improved.

  In the fourth embodiment, the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 65). The positions of the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150 are shifted in two directions (semiconductor layer stacking direction (Z direction in FIG. 65) and horizontal direction (X direction in FIG. 65)). Compared to the case, the distance between the positions of the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150 can be reduced. Thus, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light is emitted from one of the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150. When the optical axis is adjusted so that the emitted light is incident on a predetermined region of the optical system, the light emitted from the other of the light emitting region 13 of the blue-violet laser element 160 and the light emitting region 57 of the red laser element 150 is optical. It can suppress entering into the area | region which remove | deviated largely from the predetermined area | region of the system. As a result, since the optical axis adjustment of the emitted light with respect to the optical system becomes easier, the cost for optical axis adjustment can be further reduced.

  In the fourth embodiment, by forming the convex portion 71a on the n-type GaN substrate 71 of the blue-violet laser element 160, the convex portion for alignment can be easily formed on the blue-violet laser element 160. .

  The remaining effects of the fourth embodiment are similar to those of the aforementioned first embodiment.

  66 to 71 are cross-sectional views for explaining a manufacturing process for the integrated semiconductor laser device according to the fourth embodiment shown in FIGS. A manufacturing process for the integrated semiconductor laser device according to the fourth embodiment is now described with reference to FIGS. The manufacturing process of the red laser element 150 of the fourth embodiment is the same as the process of the third embodiment shown in FIGS.

When forming the blue-violet laser element 160, first, as shown in FIG. 66, up to the p-side electrode 10 is formed using the same process as in the first embodiment shown in FIGS. Thereafter, the back surface of the n-type GaN substrate 71 is polished until the thickness from the upper surface of the ridge portion 8 to the back surface of the n-type GaN substrate 71 becomes about 150 μm. Thereafter, a SiO ₂ film 74 having a thickness of about 240 nm is formed in a region corresponding to the convex portion 71a (see FIG. 65) on the back surface of the n-type GaN substrate 71 using a plasma CVD method.

Next, as shown in FIG. 67, etching is performed from the back surface of the n-type GaN substrate 71 to a depth of about 400 nm, using the SiO ₂ film 74 as a mask, using the RIE method using a chlorine-based gas. As a result, a protrusion 71 a having a protrusion height of about 400 nm is formed on the back side of the n-type GaN substrate 71. At this time, the convex portion 71a of the n-type GaN substrate 71 is formed to have a tapered side surface such that the width on the tip end side becomes smaller than the width on the root portion side. The angle θ6 formed between the side surface of the convex portion 71a of the n-type GaN substrate 71 and the surface of the active layer 3 (n-type GaN substrate 71) is about 80 °, and the tip portion of the convex portion 71a of the n-type GaN substrate 71 The width of is about 2 μm. Further, the convex portion 71a of the n-type GaN substrate 71 is formed in a stripe shape (elongated shape) along the ridge portion 8, as shown in FIG. And the convex part 71a of this n-type GaN substrate 71 becomes a convex part for alignment. Thereafter, the SiO ₂ film 74 is removed.

  Next, as shown in FIG. 69, the n-side electrode 72 is formed on the back surface including the convex portion 71a of the n-type GaN substrate 71 using the electron beam evaporation method. At this time, an Al layer (not shown) having a thickness of about 6 nm, a Pd layer (not shown) having a thickness of about 10 nm, and an Au layer (not shown) having a thickness of about 300 nm are sequentially formed. To do. Thereby, the protrusion height of the alignment convex portion constituted by the convex portion 71a of the n-type GaN substrate 71 (from the upper surface of the n-side electrode 72 located in the region other than the convex portion 71a to the upper surface of the convex portion 71a. The protruding height (H4) up to the upper surface of the n-side electrode 72 is about 400 nm. That is, the depth D3 (about 1 μm) of the concave portion for alignment constituted by the concave portion 61a of the n-type GaAs substrate 61 (see FIG. 65) is the same as that of the convex portion for alignment constituted by the n-type GaN substrate 71. It becomes larger than the protrusion height H4 (about 400 nm). As shown in FIG. 68, the end of the n-side electrode 72 located on the end surface 71 b side parallel to the light emitting surface 73 (see FIG. 64) of the n-type GaN substrate 71 is the end surface 71 b of the n-type GaN substrate 71. Are arranged in a region separated by a predetermined interval. Thus, when the blue-violet laser element 160 and the red laser element 150 are bonded to each other, the region where the n-side electrode 72 is not formed is located above the element 71a of the n-type GaN substrate 71 of the blue-violet laser element 160 above the element. Or it becomes the transparent area | region 111 which can be recognized visually from the downward direction. In this way, the blue-violet laser element 160 of the fourth embodiment is formed.

  Next, a method for joining the blue-violet laser element 160 and the red laser element 150 will be described with reference to FIGS. First, as shown in FIG. 70, a solder layer 165 made of Au—Sn is formed on the n-side electrode 64 of the red laser element 150.

  Next, as shown in FIG. 71, the convex portion for alignment constituted by the convex portion 71a of the n-type GaN substrate 71 of the blue-violet laser element 160 is set downward, and the red laser element 150 The n-type GaAs substrate 61 is positioned by being fitted into a positioning recess formed by the recess 61a. In this case, the transparent region 111 of the blue-violet laser element 160 shown in FIG. 68 is configured by the alignment convex portion constituted by the convex portion 71a of the n-type GaN substrate 71 and the concave portion 61a of the n-type GaAs substrate 61. It fits in the Z direction while visually recognizing the recessed portion for alignment. Then, in a state in which the alignment convex portion constituted by the convex portion 71 a of the n-type GaN substrate 71 is fitted in the concave portion for alignment constituted by the concave portion 61 a of the n-type GaAs substrate 61, the temperature is about 280 ° C. The solder layer 165 made of Au—Sn is melted by heat treatment under the temperature conditions of Thereafter, the solder layer 165 is solidified in the process of cooling to room temperature, whereby the blue-violet laser element 160 and the red laser element 150 are joined by the solder layer 165.

  At this time, in the fourth embodiment, the positional deviation in the horizontal direction (X direction in FIGS. 64 and 65) of the blue-violet laser element 160 and the red laser element 150 is configured by the convex portion 71a of the n-type GaN substrate 71. This can be suppressed by fitting the alignment convex portion with the alignment concave portion formed by the concave portion 61 a of the n-type GaAs substrate 61. Thereby, it is possible to suppress the cleavage directions of the blue-violet laser element 160 and the red laser element 150 from deviating from each other.

  Thereafter, the blue-violet laser element 160 and the red laser element 150 bonded to each other are simultaneously cleaved to form the light emitting surface 73 (see FIG. 64), and then separated into each element. Finally, as shown in FIG. 65, by bonding the wire 122 on the surface of the p-side electrode 63 and the external connection electrode 69 of the red laser element 150, the integrated semiconductor laser element according to the fourth embodiment is formed. Is done.

(Fifth embodiment)
72 is a sectional view showing the structure of an integrated semiconductor laser device according to the fifth embodiment of the present invention. FIG. 73 is an infrared laser of the integrated semiconductor laser device according to the fifth embodiment shown in FIG. It is the top view which looked at the element from the p side. 72 and 73, in the fifth embodiment, unlike the first to fourth embodiments, an integrated semiconductor laser including a blue-violet laser element, a red laser element, and an infrared laser element. The element will be described.

  In the fifth embodiment, as shown in FIG. 72, a blue-violet laser element 170 having two convex portions for alignment, a red laser element 180 having a concave portion for alignment, and a concave portion for alignment are provided. It has a structure in which an infrared laser element 190 is stacked (integrated) in the Z direction. The blue-violet laser element 170 is an example of the “first semiconductor laser element” in the present invention. The red laser element 180 and the infrared laser element 190 are examples of the “second semiconductor laser element” in the present invention.

  First, as shown in FIG. 72, the structure of the blue-violet laser element 170 of the fifth embodiment is the same as that of the blue-violet laser element 160 of the fourth embodiment. The structure of the red laser element 180 of the fifth embodiment is the same as that of the red laser element 150 of the third embodiment, as shown in FIG.

  Next, the structure of the infrared laser element 190 of the fifth embodiment will be described. 72, the ridge portion 88 side faces downward. In the infrared laser device 190 of the fifth embodiment, as shown in FIG. 72, n-type GaAs made of n-type GaAs having a thickness of about 500 nm is formed on the surface of the n-type GaAs substrate 81 opposite to the blue-violet laser device 170. A mold buffer layer 82 is formed. On the surface of the n-type buffer layer 82 opposite to the blue-violet laser element 170, an n-type cladding layer 83 made of n-type AlGaAs having a thickness of about 1.5 μm is formed. An active layer 84 having a thickness of about 80 nm is formed on the surface of the n-type cladding layer 83 opposite to the blue-violet laser element 170. The active layer 84 has an MQW structure in which a plurality of well layers (not shown) made of undoped AlGaAs and a plurality of barrier layers (not shown) made of undoped AlGaAs are alternately stacked.

  A p-type first cladding layer 85 made of p-type AlGaAs having a thickness of about 150 nm is formed on the surface of the active layer 84 opposite to the blue-violet laser element 170. A convex p-type second cladding layer 86 made of p-type AlGaAs having a thickness of about 800 nm is formed in a predetermined region on the surface of the p-type first cladding layer 85 opposite to the blue-violet laser element 170. Yes. A p-type cap layer 87 made of p-type GaAs having a thickness of about 600 nm is formed on the surface of the p-type second cladding layer 86 opposite to the blue-violet laser element 170. The p-type cap layer 87 and the p-type second cladding layer 86 constitute a ridge portion 88 having a tapered side surface whose width decreases from the root portion toward the tip portion side. An angle θ7 formed by the side surface of the ridge portion 88 and the surface of the active layer 84 is about 60 °. The width of the tip portion of the ridge portion 88 is about 2 μm to about 3 μm. Further, as shown in FIG. 73, the ridge portion 88 is formed in a stripe shape (elongated shape) extending in a direction (Y direction) orthogonal to the light emitting surface (cleavage surface) 93. As shown in FIG. 72, the peripheral portion of the active layer 84 corresponding to the position where the ridge portion 88 is formed becomes the light emitting region 94 of the infrared laser element 190. The light emitting region 94 is an example of the “second light emitting region” in the present invention.

  On the surface of the p-type first cladding layer 85 opposite to the blue-violet laser element 170, an n-type current made of n-type GaAs having a thickness of about 1.4 μm is formed so as to cover the side surface of the ridge portion 88. A block layer 89 is formed. A p-type contact layer 90 made of p-type GaAs having a thickness of about 1 μm is formed on the surface of the n-type current blocking layer 89 and the ridge portion 88 (p-type cap layer 87) opposite to the blue-violet laser element 170. Has been. A p-side electrode 91 having a thickness of about 1 μm is formed on the surface of the p-type contact layer 90 opposite to the blue-violet laser element 170. The p-side electrode 91 is composed of an AuZn layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 81 side.

Further, a circular through hole 190a penetrating the p-side electrode 91, the semiconductor layers (90, 89, 85 to 82) and the n-type GaAs substrate 81 from the surface of the p-side electrode 91 opposite to the blue-violet laser element 170. Is formed. The through hole 190a has a diameter of several tens of μm on the p-side electrode 91 side, and has a tapered shape such that the hole diameter on the n-type GaAs substrate 81 side is smaller than the hole diameter on the p-side electrode 91 side. It has a side. An insulating film made of a SiO ₂ film having a thickness of about 200 nm is formed on the inner side surface of the through hole 190a and on the surface of the p-side electrode 91 located in the vicinity of the through hole 190a on the side opposite to the blue-violet laser element 170. 98 is formed. In a predetermined region on the insulating film 98, an external connection electrode 99 having a thickness of about 0.3 μm is formed so as to be electrically connected to an n-side electrode 92 described later through a through hole 190a. The external connection electrode 99 includes a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 81 side. A wire (gold wire) 122 is bonded on the surface of the p-side electrode 91 and the external connection electrode 99 opposite to the blue-violet laser element 170.

  Here, in the fifth embodiment, a recess 81 a having a depth of about 1 μm is formed in a region corresponding to the ridge portion 88 on the surface of the n-type GaAs substrate 81 on the blue-violet laser element 170 side. The recess 81a of the n-type GaAs substrate 81 has a tapered inner surface such that the width on the bottom side becomes smaller than the width on the open end side (about 3 μm). The angle θ8 formed by the inner surface of the recess 81a of the n-type GaAs substrate 81 and the surface of the active layer 84 is about 60 °. Further, the recess 81a of the n-type GaAs substrate 81 is formed in a stripe shape (elongated shape) extending in the Y direction along the ridge portion 88, as shown in FIG. Then, the concave portion 81a of the n-type GaAs substrate 81 becomes a concave portion for alignment. The n-type GaAs substrate 81 is an example of the “substrate” in the present invention.

  In addition, as shown in FIG. 72, on the surface of the n-type GaAs substrate 81 including the recess 81a on the blue-violet laser element 170 side, about 0.3 μm is formed so as to be electrically connected to the external connection electrode 99. An n-side electrode 92 having a thickness is formed. The n-side electrode 92 includes an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) in this order from the n-type GaAs substrate 81 side. Thereby, the depth of the concave portion for alignment constituted by the concave portion 81a of the n-type GaAs substrate 81 (from the surface on the blue-violet laser element 170 side of the n-side electrode 92 located in a region other than the region corresponding to the concave portion 81a). The depth (D5) to the surface on the blue-violet laser element 170 side of the n-side electrode 92 located in the region corresponding to the recess 81a is about 1 μm. That is, the depth D5 (about 1 μm) of the concave portion for alignment constituted by the concave portion 81a of the n-type GaAs substrate 81 is the protrusion height H4 of the convex portion for alignment constituted by the n-type GaN substrate 71 ( Larger than about 400 nm).

  Here, in the fifth embodiment, as shown in FIG. 72, the blue-violet laser element 170 and the red laser element 180 have an alignment convex portion formed by the ridge portion 8 of the n-type GaAs substrate 61. It is integrated (laminated) in the Z direction in a state in which it is fitted into a positioning recess formed by the recess 61a. Further, the blue-violet laser element 170 and the infrared laser element 190 are positions where the alignment convex portion constituted by the convex portion 71 a of the n-type GaN substrate 71 is constituted by the concave portion 81 a of the n-type GaAs substrate 81. It is integrated (laminated) in the Z direction in a state of being fitted in the concave portion for alignment. Further, the light emitting region 13 of the blue-violet laser element 170, the light emitting region 57 of the red laser element 180, and the light emitting region 94 of the infrared laser element 190 are on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 72). Is arranged.

  Further, as described above, the depth D3 (about 1 μm) of the alignment concave portion of the red laser element 180 is larger than the protrusion height H1 (153 nm) of the alignment convex portion of the blue-violet laser element 170. Therefore, the distance between the upper surface of the convex portion for alignment of the blue-violet laser element 170 and the bottom surface of the concave portion for alignment of the red laser element 180 is a region other than the convex portion for alignment of the blue-violet laser element 170. And an interval between the red laser element 180 and a region other than the concave portion for alignment. Further, the depth D5 (about 1 μmm) of the alignment concave portion of the infrared laser element 190 is larger than the protrusion height H4 (about 400 nm) of the alignment convex portion of the blue-violet laser element 170. The distance between the upper surface of the convex portion for alignment of the violet laser element 170 and the bottom surface of the concave portion for alignment of the infrared laser element 190 is an area other than the convex portion for alignment of the blue-violet laser element 170; The distance between the red laser element 190 and the region other than the concave portion for alignment is larger.

  In addition, the alignment convex portion of the blue-violet laser element 170 and the alignment concave portion of the red laser element 180 are joined via a solder layer 175 made of Au—Sn. Further, the convex portion for alignment of the blue-violet laser element 170 and the concave portion for alignment of the infrared laser element 190 are joined via a solder layer 195 made of Au—Sn. The solder layers 175 and 195 are examples of the “bonding layer” in the present invention. The p-side electrode 10 of the blue-violet laser element 170 is electrically connected to the external connection electrode 69 via the n-side electrode 64 and the solder layer 175 of the red laser element 180. Further, the n-side electrode 72 of the blue-violet laser element 170 is electrically connected to the external connection electrode 99 via the n-side electrode 92 of the infrared laser element 190 and the solder layer 195.

  In the fifth embodiment, as described above, the alignment convex portion constituted by the ridge portion 8 of the blue-violet laser element 170 is the position constituted by the concave portion 61 a of the n-type GaAs substrate 61 of the red laser element 180. The convex portion for alignment, which is fitted into the concave portion for alignment and is constituted by the convex portion 71a of the n-type GaN substrate 71 of the blue-violet laser element 170, is the concave portion 81a of the n-type GaAs substrate 81 of the infrared laser element 190. The blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 are fitted by fitting the alignment convex portion with the concave portion. The positional deviation in the horizontal direction (X direction in FIG. 72) of the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 at the time of bonding is suppressed. It can be. Thereby, it is possible to prevent the optical axes of the emitted lights of the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 from being shifted in the horizontal direction (X direction in FIG. 72). It is easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the semiconductor laser element is made incident on the optical system (lens, mirror, etc.). Thereby, the cost concerning optical axis adjustment can be reduced. Further, when the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 are bonded together, the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 in the horizontal direction (X direction in FIG. 72). Since displacement can be suppressed, the cleavage property when the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 are bonded together and then simultaneously cleaved can be improved. As a result, the characteristics of the laser light emitted from the light emitting surface (cleavage surface) 93 can be improved.

  In the fifth embodiment, the emission region 13 of the blue-violet laser element 170, the emission region 57 of the red laser element 180, and the emission region 94 of the infrared laser element 190 are arranged in the stacking direction of the semiconductor layers (see FIG. 59). By arranging them on the same line in the Z direction, the positions of the light emitting region 13 of the blue-violet laser element 170, the light emitting region 57 of the red laser element 180, and the light emitting region 94 of the infrared laser element 190 are two directions (semiconductors). Compared to the case where the layers are shifted in the stacking direction (Z direction in FIG. 72) and the horizontal direction (X direction in FIG. 72), the interval between the positions of the light emitting regions 13, 57 and 94 can be reduced. Accordingly, when the light emitted from the integrated semiconductor laser element is incident on an optical system (such as a lens and a mirror) and used, the light emitted from one of the light emitting regions 13, 57, and 94 is emitted from the optical system. When adjusting the optical axis so as to be incident on the predetermined region, the light emitted from the other two of the light emitting regions 13, 57 and 94 is prevented from entering a region greatly deviating from the predetermined region of the optical system. be able to. As a result, since the optical axis adjustment of the emitted light with respect to the optical system becomes easier, the cost for optical axis adjustment can be further reduced.

  The remaining effects of the fifth embodiment are similar to those of the aforementioned first embodiment.

  74 to 89 are cross-sectional views for explaining a manufacturing process of the integrated semiconductor laser device according to the fifth embodiment shown in FIG. A manufacturing process for the integrated semiconductor laser device according to the fifth embodiment is now described with reference to FIGS.

  First, the manufacturing process of the blue-violet laser element 170 is the same as the process of the fourth embodiment shown in FIGS.

  The manufacturing process of the red laser element 180 is the same as the manufacturing process of the third embodiment shown in FIGS. However, in the fifth embodiment, the length in the resonator direction of the red laser element substrate before element isolation is formed to be smaller than the length in the resonator direction of the blue-violet laser element substrate before element isolation.

  Next, when forming the infrared laser device 190 of the fifth embodiment, first, as shown in FIG. 74, an n having a thickness of about 500 nm is formed on the n-type GaAs substrate 81 by using the MOCVD method. After the n-type buffer layer 82 made of type GaAs is grown, an n-type cladding layer 83 made of n-type AlGaAs having a thickness of about 1.5 μm is grown on the n-type buffer layer 82. Thereafter, an active layer 84 having a thickness of about 80 nm is grown on the n-type cladding layer 83. When the active layer 84 is grown, a plurality of well layers (not shown) made of undoped AlGaAs and a plurality of barrier layers (not shown) made of undoped AlGaAs are alternately grown. As a result, an active layer 84 having an MQW structure in which a plurality of well layers and a plurality of barrier layers are alternately stacked is formed on the n-type cladding layer 83.

  Next, a p-type first cladding layer 85 made of p-type AlGaAs having a thickness of about 150 nm and a p-type second cladding layer 86 made of p-type AlGaAs having a thickness of about 800 nm are successively grown on the active layer 84. . Subsequently, a p-type cap layer 87 made of p-type GaAs having a thickness of about 600 nm is grown on the p-type second cladding layer 86.

Next, as shown in FIG. 75, a SiO ₂ film 95 having a thickness of about 240 nm is formed on the p-type cap layer 87 by using a sputtering method, a vacuum evaporation method or an electron beam evaporation method. Thereafter, a striped (elongated) resist 96 having a width of about 2 μm to about 3 μm is formed in a region corresponding to the ridge portion 88 (see FIG. 72) on the SiO ₂ film 95.

Next, as shown in FIG. 76, the SiO ₂ film 95 is etched using the resist 96 as a mask by using a wet etching technique using buffered hydrofluoric acid. Thereafter, the resist 96 is removed.

Next, as shown in FIG. 77, the p-type first cladding layer is formed from the upper surface of the p-type cap layer 87 using the SiO ₂ film 95 as a mask by using a wet etching technique using a tartaric acid-based etching solution or a phosphoric acid-based etching solution. Etch up to 85 upper surface. As a result, a ridge portion 88 is formed which is constituted by the p-type cap layer 87 and the p-type second cladding layer 86 and has tapered side surfaces. The angle θ7 formed between the side surface of the ridge portion 88 and the upper surface of the active layer 84 (p-type first cladding layer 85) is about 60 °, and the width of the tip portion of the ridge portion 88 is about 2 μm to about 3 μm. Become. Further, as shown in FIG. 73, the ridge portion 88 is formed in a stripe shape (elongated shape) extending in a direction orthogonal to the light emitting surface 93.

Next, as shown in FIG. 78, about 1.4 μm is formed on the p-type first cladding layer 85 so as to cover the side surface of the ridge portion 88 using the SiO ₂ film 95 as a selective growth mask by using the MOCVD method. An n-type current blocking layer 89 made of n-type GaAs having a thickness of 1 mm is formed. Thereafter, the SiO ₂ film 95 is removed.

  Next, as shown in FIG. 79, p-type GaAs made of p-type GaAs having a thickness of about 1 μm is formed on the upper surfaces of the n-type current blocking layer 89 and the ridge portion 88 (p-type cap layer 87) using MOCVD. A mold contact layer 90 is grown. Thereafter, by using an electron beam evaporation method, the region other than the formation region of the through hole 190a (see FIG. 72) on the p-type contact layer 90 has a function as an etching mask and has a thickness of about 1 μm. A side electrode 91 is formed. At this time, an AuZn layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed.

  Next, as shown in FIG. 80, each of the semiconductor layers (90, 89 and 85 to 82) and n are formed from the upper surface of the p-type contact layer 90 using the p-side electrode 91 as a mask by using the RIE method using a chlorine-based gas. A circular through hole 190 a penetrating the type GaAs substrate 81 is formed. The through hole 190a is formed to have a tapered inner surface such that the hole diameter on the n-type GaAs substrate 81 side is smaller than the hole diameter (several tens of μm) on the p-side electrode 91 side.

Next, as shown in FIG. 81, SiO ₂ having a thickness of about 200 nm is formed on the inner surface of the through hole 190a and the upper surface of the p-side electrode 91 located in the vicinity of the through hole 190a by plasma CVD. An insulating film 98 made of a film is formed.

  Next, as shown in FIG. 82, a resist 100 is formed on a predetermined region other than the region corresponding to the through hole 190a. Thereafter, an external connection electrode 99 having a thickness of about 0.3 μm is formed on the upper surface of the resist 100 and on the upper surface and the inner side surface of the insulating film 98 by using an electron beam evaporation method. At this time, a Ti layer (not shown), a Pt layer (not shown), and an Au layer (not shown) are sequentially formed. Thereafter, the resist 100 is removed by a lift-off method. Thereby, as shown in FIG. 83, a portion unnecessary as the external connection electrode 99 is removed.

Next, as shown in FIG. 84, the back surface of the n-type GaAs substrate 81 is polished until the thickness from the upper surface of the ridge portion 88 to the back surface of the n-type GaAs substrate 81 becomes about 100 μm. Thereafter, a SiO ₂ film 97 having a thickness of about 240 nm is formed in a region other than the region corresponding to the recess 81a (see FIG. 72) on the back surface of the n-type GaAs substrate 81 by using plasma CVD.

Next, as shown in FIG. 85, etching is performed from the back surface of the n-type GaAs substrate 81 to a depth of about 1 μm using the SiO ₂ film 97 as a mask by using the RIE method using a chlorine-based gas. As a result, a recess 81 a having a depth of about 1 μm is formed on the back side of the n-type GaAs substrate 81. At this time, the recess 81a of the n-type GaAs substrate 81 is formed so as to have a tapered inner surface whose width on the bottom side becomes smaller than the width on the open end side. Note that the width of the recess 81a of the n-type GaAs substrate 81 on the open end side is about 3 μm. The angle θ8 formed by the inner surface of the recess 81a of the n-type GaAs substrate 81 and the surface of the active layer 84 (n-type GaAs substrate 81) is approximately 60 °. Further, the recess 81a of the n-type GaAs substrate 81 is formed in a stripe shape (elongated shape) along the ridge portion 88 as shown in FIG. Then, the concave portion 81a of the n-type GaAs substrate 81 becomes a concave portion for alignment. Thereafter, the SiO ₂ film 97 is removed.

  Next, as shown in FIG. 71, about 0.3 μm is used so as to be electrically connected to the external connection electrode 99 on the back surface including the concave portion 81a of the n-type GaAs substrate 81 by using an electron beam evaporation method. An n-side electrode 92 having a thickness of is formed. At this time, an AuGe layer (not shown), a Ni layer (not shown), and an Au layer (not shown) are sequentially formed. Thereby, the depth of the concave portion for alignment constituted by the concave portion 81a of the n-type GaAs substrate 81 (positioned from the upper surface of the n-side electrode 92 located in a region other than the opening 81 to the upper surface of the bottom of the concave portion 81a. The depth D5 to the upper surface of the n-side electrode 92 is about 1 μm. That is, the depth D5 (about 1 μm) of the alignment concave portion constituted by the concave portion 81a of the n-type GaAs substrate 81 is the protrusion height H4 of the alignment convex portion constituted by the n-type GaN substrate 71 ( About 400 nm) (see FIG. 72).

  Next, with reference to FIGS. 87 to 89, a method of joining the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 will be described. First, as shown in FIG. 87, a solder layer 175 made of Au—Sn is formed on the n-side electrode 64 of the red laser element 180. Thereafter, the convex portion for alignment constituted by the ridge portion 8 of the blue-violet laser element 170 is turned downward, and the concave portion 61a of the n-type GaAs substrate 61 of the red laser element 180 is constituted. Positioning is performed by fitting into the positioning recess. At this time, from the transparent region 111 of the blue-violet laser element 170 shown in FIGS. 10 and 12, the alignment convex portion constituted by the ridge portion 8 and the concave portion 61a of the n-type GaAs substrate 61 are aligned. It is fitted in the Z direction while visually recognizing the recess. Then, the alignment convex portion formed by the ridge portion 8 is fitted into the alignment concave portion formed by the concave portion 61a of the n-type GaAs substrate 61, and heat treatment is performed at a temperature of about 280 ° C. As a result, the solder layer 175 made of Au—Sn is melted. Thereafter, the solder layer 175 is solidified in the cooling process to room temperature, whereby the blue-violet laser element 170 and the red laser element 180 are joined by the solder layer 175 as shown in FIG.

  At this time, in the fifth embodiment, the positional deviation of the blue-violet laser element 170 and the red laser element 180 in the horizontal direction (X direction in FIG. 72) This can be suppressed by fitting with the concave portion for alignment constituted by the concave portion 61 a of the type GaAs substrate 61. Thereby, it is possible to suppress the cleavage directions of the blue-violet laser element 170 and the red laser element 180 from deviating from each other.

  Next, as shown in FIG. 89, a solder layer 195 made of Au—Sn is formed on the n-side electrode 92 of the infrared laser element 190. Thereafter, the convex portion for alignment constituted by the convex portion 71a of the n-type GaN substrate 71 of the blue-violet laser element 170 is turned downward, and the n-type GaAs substrate 81 of the infrared laser element 190 is directed downward. Alignment is performed by fitting into a recess for alignment constituted by the recess 81a. At this time, from the transparent region 111 of the blue-violet laser element 170 shown in FIGS. 10 and 12, the alignment convex portion constituted by the convex portion 71 a of the n-type GaN substrate 71 and the concave portion of the n-type GaAs substrate 81 are formed. It fits in the Z direction while visually recognizing the alignment concave portion constituted by 81a. Then, in a state in which the alignment convex portion constituted by the convex portion 71a of the n-type GaN substrate 71 is fitted in the concave portion for alignment constituted by the concave portion 81a of the n-type GaAs substrate 81, about 280 ° C. The solder layer 195 made of Au—Sn is melted by heat treatment under the temperature conditions of Thereafter, the solder layer 195 is solidified in the course of cooling to room temperature, whereby the blue-violet laser element 170 and the infrared laser element 190 are joined by the solder layer 195.

  At this time, in the fifth embodiment, the positional deviation of the blue-violet laser element 170 and the infrared laser element 190 in the horizontal direction (X direction in FIG. 72) is aligned by the convex portion 71a of the n-type GaN substrate 71. Can be suppressed by fitting the convex portion for use with the concave portion for alignment constituted by the concave portion 81 a of the n-type GaAs substrate 81. Thereby, it is possible to prevent the cleavage directions of the blue-violet laser element 170 and the infrared laser element 190 from deviating from each other.

  Thereafter, the blue-violet laser element 170, the red laser element 180, and the infrared laser element 190 bonded to each other are simultaneously cleaved to form the light emitting surface 93 (see FIG. 73). To separate. Finally, as shown in FIG. 72, on the surface of the p-side electrode 63 and the external connection electrode 69 of the red laser element 180, and on the surface of the p-side electrode 91 and the external connection electrode 99 of the infrared laser element 190. By bonding the wire 122 to each other, the integrated semiconductor laser device according to the fifth embodiment is formed.

(Sixth embodiment)
FIG. 90 is a sectional view showing the structure of an integrated semiconductor laser device according to the sixth embodiment of the present invention. Referring to FIG. 90, in the sixth embodiment, unlike the first to fifth embodiments, the alignment convex portions and concave portions and the light emitting region are the same in the stacking direction (Z direction) of the semiconductor layers. A case will be described in which they are not arranged on the line but are arranged at a predetermined interval in the horizontal direction (X direction).

  In the sixth embodiment, as shown in FIG. 90, a blue-violet laser element 200 having a convex portion for alignment and a red laser element 210 having a concave portion for alignment are stacked (integrated) in the Z direction. Has a structured. The blue-violet laser element 200 and the red laser element 210 are examples of the “first semiconductor laser element” and the “second semiconductor laser element” in the present invention, respectively.

  First, the structure of the blue-violet laser device 200 of the sixth embodiment will be described. In the blue-violet laser device 200 of the sixth embodiment, as shown in FIG. 90, a protrusion having a protrusion height of about 400 nm in a region other than the region corresponding to the ridge portion 8 on the back surface side of the n-type GaN substrate 71. 71c is formed. The convex portion 71c of the n-type GaN substrate 71 has a tapered side surface such that the width of the tip portion is smaller than the width of the root portion. The angle θ9 formed between the side surface of the convex portion 71c of the n-type GaN substrate 71 and the upper surface of the active layer 3 is about 80 °. Further, the width of the tip portion of the convex portion 71c of the n-type GaN substrate 71 is about 2 μm. Further, the convex portion 71 c of the n-type GaN substrate 71 is formed in a stripe shape (elongated shape) along the ridge portion 8. And the convex part 71c of the n-type GaAs substrate 71 becomes a convex part for alignment.

  Next, the structure of the red laser element 210 of the sixth embodiment will be described. In the red laser element 210 of the sixth embodiment, as shown in FIG. 90, a depth of about 1 μm is formed in a region other than the region corresponding to the ridge portion 54 on the surface of the n-type GaAs substrate 61 on the blue-violet laser device 200 side. A concave portion 61b having the shape is formed. The recess 61b of the n-type GaAs substrate 61 has a tapered inner surface such that the width on the bottom side becomes smaller than the width on the open end side (about 3 μm). The angle θ10 formed by the inner surface of the recess 61b of the n-type GaAs substrate 61 and the surface of the active layer 24 is approximately 60 °. The recess 61 b of the n-type GaAs substrate 61 is formed in a stripe shape (elongated shape) along the ridge portion 54. Then, the recess 61b of the n-type GaAs substrate 61 becomes a recess for alignment.

  Here, in the sixth embodiment, as shown in FIG. 90, the blue-violet laser element 200 and the red laser element 210 have alignment protrusions constituted by the protrusions 71 c of the n-type GaN substrate 71. The n-type GaAs substrate 61 is integrated (laminated) in the Z direction in a state where the n-type GaAs substrate 61 is fitted into a positioning concave portion. Further, the light emitting region 13 of the blue-violet laser element 200 and the light emitting region 57 of the red laser element 210 are arranged on the same line in the stacking direction of the semiconductor layers (Z direction in FIG. 90). Further, the alignment convex portion of the blue-violet laser element 200 and the alignment concave portion of the red laser element 210 are joined via a solder layer 205 made of Au—Sn. The solder layer 205 is an example of the “bonding layer” in the present invention.

  The remaining structure of the sixth embodiment is similar to that of the aforementioned fourth embodiment.

  In the sixth embodiment, as described above, the alignment convex portion formed by the convex portion 71 c of the n-type GaN substrate 71 of the blue-violet laser element 200 is the concave portion of the n-type GaAs substrate 61 of the red laser element 210. The blue-violet laser when the blue-violet laser element 200 and the red laser element 210 are bonded together by fitting the concave portion for positioning with the concave portion 61b by fitting the concave portion for positioning with the concave portion. The positional deviation in the horizontal direction (X direction in FIG. 90) of the element 200 and the red laser element 210 can be suppressed. As a result, the optical axis of the emitted light from the blue-violet laser element 200 and the optical axis of the emitted light from the red laser element 210 can be prevented from shifting in the horizontal direction (X direction in FIG. 90). It becomes easy to adjust the optical axis of the emitted light with respect to the optical system when the emitted light of the type semiconductor laser element is made incident on the optical system (such as a lens and a mirror). Thereby, the cost concerning optical axis adjustment can be reduced. Further, since the positional deviation in the horizontal direction (X direction in FIG. 90) of the blue-violet laser element 200 and the red laser element 210 when the blue-violet laser element 200 and the red laser element 210 are bonded together can be suppressed, It is possible to prevent the cleavage directions of the violet laser element 200 and the red laser element 210 from deviating from each other. Thereby, it is possible to improve the cleavage property when the blue-violet laser element 200 and the red laser element 210 are bonded together and then simultaneously cleaved. As a result, it is possible to improve the characteristics of the laser light emitted from the light emitting surface (cleavage surface).

  The remaining effects of the sixth embodiment are similar to those of the aforementioned first embodiment.

  Next, the manufacturing process of the sixth embodiment is the same as the manufacturing process of the fourth embodiment. However, in the sixth embodiment, when the convex portion 71b is formed on the back surface side of the n-type GaN substrate 71, the convex portion 71b of the n-type GaN substrate 71 and the light emitting region 13 are on the same line in the stacking direction of the semiconductor layers. It is formed so as not to be placed on the surface. Further, when the recess 61b is formed on the back surface side of the n-type GaAs substrate 61, the recess 61b of the n-type GaAs substrate 61 and the light emitting region 57 are formed so as not to be arranged on the same line in the stacking direction of the semiconductor layers. .

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the first to sixth embodiments, an integrated semiconductor laser element including a blue-violet laser element and a red laser element, or an integrated semiconductor laser element including a blue-violet laser element, a red laser element, and an infrared laser element. However, the present invention is not limited to this, and the present invention is not limited to this. An integrated semiconductor laser element including a blue-violet laser element and an infrared laser element, and a red laser element and an infrared ray are also included. The present invention can also be applied to an integrated semiconductor laser element including a laser element. The present invention can also be applied to an integrated semiconductor laser element including two or more semiconductor laser elements other than a blue-violet laser element, a red laser element, and an infrared laser element.

  Moreover, in the said 1st-6th embodiment, although the side surface of the convex part and the inner side surface of the recessed part were made into the taper shape, respectively, this invention is not limited to this, The side surface of a convex part and the inner side surface of a recessed part are tapered. It does not have to be shaped.

  Moreover, although the example which used the solder layer as a joining layer was shown in the said 1st-6th embodiment, this invention is not restricted to this, You may use the joining layer which consists of materials other than a solder layer.

In the first to sixth embodiments, the current blocking layer including the n-type GaAs layer is used in the red laser element. However, the present invention is not limited to this, and an insulating film made of SiN _X , SiO ₂ or the like is used. It may be used as a current blocking layer.

  Moreover, in the said 1st-6th embodiment, the thickness of the electrode located on the side surface of the convex part for alignment and the thickness of the electrode located on areas other than the side surface of the convex part for alignment are the same However, the present invention is not limited to this, and the thickness of the electrode positioned on the side surface of the positioning convex portion is smaller than the thickness of the electrode positioned on the region other than the side surface of the positioning convex portion. May be.

  Moreover, in the said 1st-6th embodiment, the thickness of the electrode located on the inner surface of the recessed part for alignment and the thickness of the electrode located on areas other than the inner surface of the recessed part for alignment are the same However, the present invention is not limited to this, and the thickness of the electrode positioned on the inner surface of the positioning recess is smaller than the thickness of the electrode positioned on the region other than the inner surface of the positioning recess. May be.

1 is a plan view showing a structure of an integrated semiconductor laser device according to a first embodiment of the present invention. It is sectional drawing along the 100-100 line of FIG. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a plan view for explaining the manufacturing process for the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2; It is sectional drawing of the area | region 200 enclosed with the broken line of FIG. FIG. 5 is a plan view for explaining the manufacturing process for the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2; It is sectional drawing of the area | region 300 enclosed with the broken line of FIG. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. FIG. 5 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the first embodiment shown in FIGS. 1 and 2. It is the top view which showed the structure of the integrated semiconductor laser element by 2nd Embodiment of this invention. FIG. 30 is a cross-sectional view taken along line 400-400 in FIG. 29. FIG. 31 is a plan view for explaining the manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 32 is a cross-sectional view of a region 500 surrounded by a broken line in FIG. 31. FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; FIG. 31 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the second embodiment shown in FIGS. 29 and 30; It is the top view which showed the structure of the integrated semiconductor laser element by 3rd Embodiment of this invention. FIG. 52 is a cross-sectional view taken along line 600-600 in FIG. 51. FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; FIG. 53 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the third embodiment shown in FIGS. 51 and 52; It is the top view which showed the structure of the integrated semiconductor laser element by 4th Embodiment of this invention. FIG. 65 is a cross-sectional view taken along line 700-700 in FIG. 64. FIG. 66 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the fourth embodiment shown in FIGS. 64 and 65; FIG. 66 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the fourth embodiment shown in FIGS. 64 and 65; FIG. 66 is a plan view for explaining a manufacturing process for the integrated semiconductor laser element according to the fourth embodiment shown in FIGS. 64 and 65; FIG. 69 is a cross-sectional view of a region 800 surrounded by a broken line in FIG. 68. FIG. 66 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the fourth embodiment shown in FIGS. 64 and 65; FIG. 66 is a cross-sectional view for explaining a manufacturing process for the integrated semiconductor laser element according to the fourth embodiment shown in FIGS. 64 and 65; It is sectional drawing which showed the structure of the integrated semiconductor laser element by 5th Embodiment of this invention. FIG. 75 is a plan view of an infrared laser element substrate of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72 as viewed from the p side. FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; FIG. 75 is a cross-sectional view for explaining a manufacturing process of the integrated semiconductor laser element according to the fifth embodiment shown in FIG. 72; It is sectional drawing which showed the structure of the integrated semiconductor laser element by 6th Embodiment of this invention. It is the perspective view which showed the structure of the conventional integrated semiconductor laser element.

Explanation of symbols

8 Ridge part (convex part, first ridge part, second ridge part)
12, 43, 58, 73, 93 Light exit surface 13 Light emitting region (first light emitting region)
29 Ridge part (second ridge part)
30 n-type current blocking layer (current blocking layer)
30a Opening (recess)
34, 57, 94 Light emitting area (second light emitting area)
42 Current blocking layer 42a Opening (recess)
54 Ridge part (convex part, first ridge part)
61, 81 n-type GaAs substrate (substrate)
61a Recess 71 n-type GaN substrate (substrate)
71a, 71b Convex part 81a, 81b Concave part 110, 130, 160, 170, 200 Blue-violet laser element (first semiconductor laser element)
115, 135, 155, 165, 175, 195, 205 Solder layer (bonding layer)
120, 140, 150, 180, 210 Red laser element (second semiconductor laser element)
190 Infrared laser element (second semiconductor laser element)

Claims (9)

A first semiconductor laser element including a first light emitting region and having one of a convex portion and a concave portion;
A second semiconductor laser element including the second light emitting region and having the other of the convex portion and the concave portion,
One of the convex portion and the concave portion of the first semiconductor laser element is fitted into the other of the convex portion and the concave portion of the second semiconductor laser element,
The integrated semiconductor laser device, wherein the first light emitting region and the second light emitting region are disposed substantially on the same line in the stacking direction of the semiconductor layers.   The integrated semiconductor laser device according to claim 1, wherein the convex portion and the concave portion are formed so as to extend in a direction intersecting the light emitting surface. One of the first semiconductor laser element and the second semiconductor laser element further includes a first ridge portion constituting the convex portion,
The integrated semiconductor laser element according to claim 1, wherein the other of the first semiconductor laser element and the second semiconductor laser element includes the concave portion. The other of the first semiconductor laser element and the second semiconductor laser element is
A second ridge portion;
A current blocking layer formed to cover a side surface of the second ridge portion, having a thickness larger than a height of the second ridge portion, and having an opening in a region corresponding to the second ridge portion; ,
The other concave portion of the first semiconductor laser element and the second semiconductor laser element is constituted by the opening of the current blocking layer,
4. The integrated semiconductor laser device according to claim 3, wherein the first ridge portion constituting the convex portion is fitted into the opening portion of the current blocking layer constituting the concave portion. 5.   3. The integrated semiconductor laser device according to claim 1, wherein at least one of the first semiconductor laser device and the second semiconductor laser device further includes a substrate on which the convex portion or the concave portion is formed. The convex part has a tapered shape such that the width on the tip side becomes smaller than the width on the root part side,
6. The integrated semiconductor laser device according to claim 1, wherein the concave portion has a tapered shape such that a width on a bottom side is smaller than a width on an open end side.   The integrated semiconductor laser device according to claim 1, wherein the convex portion and the concave portion are bonded via a bonding layer. Bonding a first semiconductor laser element having one of a convex part and a concave part and a second semiconductor laser element having the other of the convex part and the concave part in a state where the convex part is fitted in the concave part;
An integrated semiconductor laser device comprising: a step of simultaneously cleaving the first semiconductor laser device and the second semiconductor laser device in a state where the first semiconductor laser device and the second semiconductor laser device are bonded together Manufacturing method. The first semiconductor laser element includes a first light emitting region,
The second semiconductor laser element includes a second light emitting region,
The step of bonding the first semiconductor laser element and the second semiconductor laser element is such that the first light emitting region and the second light emitting region are disposed substantially on the same line in the stacking direction of the semiconductor layers. The method of manufacturing an integrated semiconductor laser device according to claim 8, further comprising a step of bonding the first semiconductor laser device and the second semiconductor laser device.

Images