CN1734797A - LED with hot channel bonding layer - Google Patents
LED with hot channel bonding layer Download PDFInfo
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- CN1734797A CN1734797A CNA2004100556540A CN200410055654A CN1734797A CN 1734797 A CN1734797 A CN 1734797A CN A2004100556540 A CNA2004100556540 A CN A2004100556540A CN 200410055654 A CN200410055654 A CN 200410055654A CN 1734797 A CN1734797 A CN 1734797A
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- emitting diode
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- gluing layer
- light
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
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- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The LED with thermal channel adhesive layer is characterized in that, forming metal bulge on adhesive layer that combines base plate and LED stack, or the semiconductor bulge penetrates adhesive layer, both to form heat dispersion channel to increase heat dispersion effect and improve stability and efficiency; wherein, the said LED at least comprises a said plate, a insulating layer, a LED stack formed on insulating layer, and a said adhesive layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially about a kind of light-emitting diode with passage of heat gluing layer with gluing layer.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data memory device, communication device, lighting device and medical treatment device.How improving the brightness of light-emitting diode, is the important topic in the manufacturing of light-emitting diode.
A kind of led configurations and method for making thereof are disclosed in No. 550834 invention of Taiwan patent announcement, one light-emitting diode epitaxial structure is grown up on an extinction first substrate, utilize the soft dielectric gluing layer of a macromolecular material that this light-emitting diode brilliant surperficial doing with a high thermal conductivity coefficient second substrate of heap of stone engaged again, to increase the chip cooling effect, increase lumination of light emitting diode efficient.In foregoing invention patent case, epitaxial layer is grown up on this extinction first substrate, adopt gluing layer that epitaxial layer and high thermal conductivity coefficient second substrate are linked the back again and remove extinction first substrate to reduce thermal resistance, increase heat sinking function, and to increase luminous efficiency; Yet, the summation that is equivalent to this epitaxial layer thermal resistance, this soft dielectric gluing layer thermal resistance and this high thermal conductivity coefficient second substrate thermal resistance because of this light emitting diode construction thermal resistance, wherein, the thermal conductivity coefficient of the soft dielectric gluing layer of macromolecular material approximately between 0.1W/mk between the 0.3W/mk, thermal conductivity coefficient is very little, cause this light-emitting diode still can't give full play to the heat dissipation characteristics of high thermal conductance substrate, have the shortcoming of poor heat radiation.
Summary of the invention
The shortcoming that has poor heat radiation in view of foregoing invention, the main technical problem to be solved in the present invention is the heat dissipation problem with light-emitting diode of gluing layer, and another technical problem that the present invention will solve provides the method that High Power LED one solves heat dissipation problem.
For solving the shortcoming of foregoing invention, this case inventor proposes an inventive concept, think if between LED lamination and substrate, the passage of heat that forms with metal coupling or semiconductor projection penetrate or partial penetration in conjunction with the gluing layer of LED lamination and substrate, the passage of heat that the heat penetration that the LED lamination produces can be crossed projection formation is transmitted to substrate, has the heat dissipation problem of gluing layer light-emitting diode and the heat dissipation problem of High Power LED with effective solution.
For achieving the above object, the invention provides a kind of light-emitting diode with passage of heat gluing layer, comprise a high heat-radiating substrate, be formed at the gluing layer with projection passage of heat on this high heat-radiating substrate, wherein, by projection penetrate or the partial penetration gluing layer to form the passage of heat, be formed at the reflector on this gluing layer with projection passage of heat, be formed at the insulating barrier on this reflector, be formed at the transparency conducting layer on this insulating barrier, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer on this first surface zone, be formed at one first bond course on this first contact layer, be formed at the luminescent layer on this first bond course, be formed at one second bond course on this luminescent layer, be formed at one second contact layer on this second bond course, be formed at one first link electrode on this second contact layer, and be formed at one second link electrode on this second surface zone; Can also between this high heat-radiating substrate and this have the gluing layer of the projection passage of heat, form an insulating barrier, and not influence the object of the invention.
Aforementioned high heat-radiating substrate comprises at least a material that is selected from GaP, Si, SiC and the metal institute constituent material cohort; The aforesaid projection passage of heat can be the metal coupling passage of heat or the semiconductor projection passage of heat, comprises at least a material or other the replaceable material that are selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and the SiC institute constituent material cohort; Aforementioned gluing layer comprises at least a material or other the replaceable material that is selected from polyimides (PI), benzocyclobutane (BCB) and mistake fluorine cyclobutane (PFCB) the institute constituent material cohort; Aforementioned reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort; The aforementioned dielectric layer is selected from least a material or other the replaceable material in SiNx, SiO2, Al2O3 and the TiO2 institute constituent material cohort; Aforementioned transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort; Aforementioned first contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned first bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort; Aforementioned light emission layer comprises at least a material in AlGaInP, InGaP, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort; Aforementioned second bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort, and aforementioned second contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
Description of drawings
Fig. 1 is a schematic diagram, shows a kind of led configurations according to one embodiment of the present invention;
Fig. 2 is a schematic diagram, shows a kind of led configurations according to another preferred embodiment of the present invention;
Fig. 3 is a schematic diagram, shows a kind of light emitting diode matrix structure according to the another preferred embodiment of the present invention.
Description of reference numerals
7 connect the electrode of light emitting diode matrix
8 second link electrodes, 9 first link electrodes
10 have the high heat-radiating substrate of the projection passage of heat
The 11 high heat-radiating substrate 12 projection passage of heats
13 gluing layers, 14 reflector
15 insulating barriers, 16 transparency conducting layers
17 first contact layers, 18 first bond courses
19 luminescent layers, 20 second bond courses
111 insulating barriers, 112 insulating barriers
Embodiment
Embodiment 1
See also Fig. 1, the light-emitting diode that has passage of heat gluing layer according to one embodiment of the present invention, comprise a high heat-radiating substrate 11, be formed at the gluing layer 13 with projection passage of heat 12 on this high heat-radiating substrate, wherein, by projection penetrate or the partial penetration gluing layer to form the passage of heat, be formed at the reflector 14 on this gluing layer with projection passage of heat, be formed at the insulating barrier 15 on this reflector, be formed at the transparency conducting layer 16 on this insulating barrier, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 17 on this first surface zone, be formed at one first bond course 18 on this first contact layer, be formed at the luminescent layer 19 on this first bond course, be formed at one second bond course 20 on this luminescent layer, be formed at one second contact layer 21 on this second bond course, be formed at one first link electrode 9 on this second contact layer, and be formed at one second link electrode 8 on this transparency conducting layer second surface zone; Can also between this high heat-radiating substrate and this have the gluing layer of the projection passage of heat, form an insulating barrier, and not influence the object of the invention.
Embodiment 2
See also Fig. 2, the light-emitting diode that coheres that has the passage of heat according to another preferred embodiment of the present invention, comprise a high heat-radiating substrate 10 with projection passage of heat, be formed at the insulating barrier 111 on this high heat-radiating substrate with projection passage of heat, be formed at the gluing layer 13 on this insulating barrier, make insulating barrier penetrate or the partial penetration gluing layer by projection, be formed at the transparency conducting layer 16 on this insulating barrier and the gluing layer, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 17 on this first surface zone, be formed at the bundle of one first on this first contact layer bond course 18, be formed at the luminescent layer 19 on this first bond course, be formed at one second bond course 20 on this luminescent layer, be formed at one second contact layer 21 on this second bond course, be formed at one first link electrode 9 on this second contact layer, and be formed at one second link electrode 8 on this transparency conducting layer second surface zone.
Embodiment 3
See also Fig. 3, the light emitting diode matrix that coheres that has the passage of heat according to the another preferred embodiment of the present invention, first preferred embodiment of itself and Fig. 1 is similar, difference is in its upper surface in insulating barrier 15 and comprises a plurality of first surfaces zone and a plurality of second surfaces zone, be formed at a plurality of transparency conducting layers 16 on a plurality of first surfaces of this insulating barrier zone, have a plurality of first surfaces zone and a plurality of second surfaces zone on these a plurality of transparency conducting layers, be formed at a plurality of LED laminations on a plurality of first surfaces zone of these a plurality of transparency conducting layers, this LED lamination comprises first contact layer 17 in regular turn, first bond course 18, luminescent layer 19, second bond course 20, second contact layer 21, be formed at the insulating barrier 112 that reaches on this insulating barrier second surface zone between the LED lamination, be formed on this transparency conducting layer second surface zone the electrode 7 that second contact layer with the adjacent LED lamination joins, be formed at one first link electrode 9 on specific second contact layer, and be formed at one second link electrode 8 on this specific transparency conducting layer second surface zone, above-mentioned a plurality of LED lamination is electrical connected on demand, obtains a light emitting diode matrix.
Aforementioned high heat-radiating substrate or the high heat-radiating substrate with projection passage of heat comprise at least a material that is selected from GaP, Sio, SiC and the metal institute constituent material cohort; The aforesaid projection passage of heat can be the metal coupling passage of heat or the semiconductor projection passage of heat, comprises at least a material or other the replaceable material that are selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and the SiC institute constituent material cohort; Aforementioned gluing layer comprises at least a material or other the replaceable material that is selected from polyimides (PI), benzocyclobutane (BCB) and mistake fluorine cyclobutane (PFCB) the institute constituent material cohort; Aforementioned reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort; The aforementioned dielectric layer is selected from least a material or other the replaceable material in SiNx, SiO2, Al2O3 and the TiO2 institute constituent material cohort; Aforementioned transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort; Aforementioned first contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort; Aforementioned first bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort; Aforementioned light emission layer comprises at least a material in AlGaInPo, InGaP, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort; Aforementioned second bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort; Aforementioned second contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
Above-mentioned only is that scope of the present invention is not limited to these preferred embodiments in order to the preferred embodiment of explanation notion of the present invention, and all changes of doing according to notion of the present invention all belong to the scope of the present patent application patent.
Claims (19)
1. light-emitting diode with passage of heat gluing layer comprises at least:
One high heat-radiating substrate;
One insulating barrier;
One LED lamination is formed on this insulating barrier; And
One a gluing layer with projection passage of heat between this high heat-radiating substrate and insulating barrier wherein, penetrates or the partial penetration gluing layer by projection.
2. light emitting diode matrix with passage of heat gluing layer comprises at least:
One high heat-radiating substrate;
One insulating barrier,
A plurality of LED laminations are formed on this insulating barrier, wherein, are formed on this insulating barrier these a plurality of LED laminations and are electrical connected on demand and form a light emitting diode matrix; And
One a gluing layer with projection passage of heat between this high heat-radiating substrate and insulating barrier wherein, penetrates or the partial penetration gluing layer by projection.
3. the light-emitting diode with passage of heat gluing layer as claimed in claim 1, wherein, being contained in this high heat-radiating substrate and this has and forms an insulating barrier between the gluing layer of the projection passage of heat, also or simultaneously has between the gluing layer of the projection passage of heat and have between the gluing layer of the projection passage of heat and this LED lamination in this in this high heat-radiating substrate and this and respectively form an insulating barrier.
4. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 2, wherein, being contained in this high heat-radiating substrate and this has and forms an insulating barrier between the gluing layer of the projection passage of heat, has between the gluing layer of the projection passage of heat and this has between gluing layer of the projection passage of heat and these a plurality of LED laminations and respectively forms an insulating barrier in this high heat-radiating substrate and this also or simultaneously.
5. as claim 1,2,3 or 4 described light-emitting diodes with passage of heat gluing layer, wherein, this insulating barrier is selected from least a material or other the replaceable material in SiNx, SiO2, Al2O3 and the TiO2 institute constituent material cohort.
6. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 or 2 wherein, is contained in and forms a transparency conducting layer between this insulating barrier and this LED lamination.
7. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2 wherein, also is contained in this LED lamination top and forms a transparency conducting layer.
8. as claim 6 or 7 described light-emitting diode or light emitting diode matrixs with passage of heat gluing layer, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort.
9. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2 wherein, also is contained on this gluing layer with projection passage of heat and formation one reflector between this insulating barrier.
10. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 9, wherein, this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
11. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2, wherein, this projection passage of heat can be metal coupling passage or the hot channel of semiconductor projection, and the passage of heat comprises at least a material or other the replaceable material that is selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and the SiC institute constituent material cohort.
12. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2, wherein, this gluing layer comprises at least a material or other the replaceable material that is selected from polyimides (PI), benzocyclobutane (BCB) and mistake fluorine cyclobutane (PFCB) the institute constituent material cohort.
13. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2, wherein, this high heat-radiating substrate comprises at least a material or other the replaceable material that is selected from GaP, Si, SiC and the metal institute constituent material cohort.
14. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 1 or 2, wherein, this LED lamination comprises:
One first contact layer;
One first bond course is formed on this first contact layer;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer; And
One second contact layer is formed on this second bond course.
15. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 14, wherein, this first contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
16. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 14, wherein, this first bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
17. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 14, wherein, this luminescent layer comprises at least a material in AlGaInP, InGaP, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
18. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 14, wherein, this second bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
19. light-emitting diode or the light emitting diode matrix with passage of heat gluing layer as claimed in claim 14, wherein, this second contact layer comprises and is selected from GaP, GaAs, GaAsP, at least a material in InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100556540A CN100365834C (en) | 2004-08-02 | 2004-08-02 | LED with hot channel bonding layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100556540A CN100365834C (en) | 2004-08-02 | 2004-08-02 | LED with hot channel bonding layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1734797A true CN1734797A (en) | 2006-02-15 |
| CN100365834C CN100365834C (en) | 2008-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100556540A Expired - Lifetime CN100365834C (en) | 2004-08-02 | 2004-08-02 | LED with hot channel bonding layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101488538B (en) * | 2008-01-14 | 2011-04-06 | 奇力光电科技股份有限公司 | Light emitting diode apparatus having heat conductive substrate |
| WO2011147290A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Light emitting diode with thermoradiation heat-dissipation layers |
| CN102437261A (en) * | 2010-09-29 | 2012-05-02 | 晶元光电股份有限公司 | Semiconductor light-emitting element and manufacturing method thereof |
| CN102820405A (en) * | 2012-07-17 | 2012-12-12 | 大连理工大学 | Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus |
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| CN102130261B (en) * | 2010-01-19 | 2014-06-18 | 晶元光电股份有限公司 | Semiconductor light-emitting element with protection layer |
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| TW550834B (en) * | 2002-02-15 | 2003-09-01 | United Epitaxy Co Ltd | Light emitting diode and its manufacturing method |
| DE10158754A1 (en) * | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier |
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2004
- 2004-08-02 CN CNB2004100556540A patent/CN100365834C/en not_active Expired - Lifetime
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| CN102130261B (en) * | 2010-01-19 | 2014-06-18 | 晶元光电股份有限公司 | Semiconductor light-emitting element with protection layer |
| WO2011147290A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Light emitting diode with thermoradiation heat-dissipation layers |
| US9099612B2 (en) | 2010-07-30 | 2015-08-04 | Epistar Corporation | Semiconductor light-emitting device and the manufacturing method thereof |
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