CN1726602A - 具有相变材料的电子器件及其制造方法 - Google Patents
具有相变材料的电子器件及其制造方法 Download PDFInfo
- Publication number
- CN1726602A CN1726602A CN 200380106497 CN200380106497A CN1726602A CN 1726602 A CN1726602 A CN 1726602A CN 200380106497 CN200380106497 CN 200380106497 CN 200380106497 A CN200380106497 A CN 200380106497A CN 1726602 A CN1726602 A CN 1726602A
- Authority
- CN
- China
- Prior art keywords
- phase
- change material
- electronic device
- resistance
- contact area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012782 phase change material Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 230000008859 change Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 30
- 239000004020 conductor Substances 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000002349 favourable effect Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000009466 transformation Effects 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 7
- 230000002688 persistence Effects 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 TaSi 2 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02080430 | 2002-12-19 | ||
EP02080430.8 | 2002-12-19 | ||
EP03100583.8 | 2003-03-07 | ||
EP03103338.4 | 2003-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1726602A true CN1726602A (zh) | 2006-01-25 |
CN100401547C CN100401547C (zh) | 2008-07-09 |
Family
ID=35925192
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801071076A Expired - Fee Related CN100521277C (zh) | 2002-12-19 | 2003-12-03 | 包含相变材料的电器件 |
CNB2003801066260A Expired - Fee Related CN100533755C (zh) | 2002-12-19 | 2003-12-05 | 具有相变材料和平行加热器的电子器件 |
CNB2003801064975A Expired - Fee Related CN100401547C (zh) | 2002-12-19 | 2003-12-05 | 具有相变材料的电子器件及其制造方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801071076A Expired - Fee Related CN100521277C (zh) | 2002-12-19 | 2003-12-03 | 包含相变材料的电器件 |
CNB2003801066260A Expired - Fee Related CN100533755C (zh) | 2002-12-19 | 2003-12-05 | 具有相变材料和平行加热器的电子器件 |
Country Status (1)
Country | Link |
---|---|
CN (3) | CN100521277C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253140A (zh) * | 2013-06-28 | 2014-12-31 | 国际商业机器公司 | 电阻型随机存取存储器单元 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7800092B2 (en) * | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
CN100461485C (zh) * | 2007-01-17 | 2009-02-11 | 中国科学院上海微系统与信息技术研究所 | 基于硫系化合物相变材料的限流器及制作方法 |
WO2008120126A1 (en) * | 2007-03-30 | 2008-10-09 | Nxp B.V. | An electronic device, and a method of operating an electronic device |
US8470635B2 (en) * | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
CN101807665B (zh) * | 2010-03-04 | 2012-07-25 | 同济大学 | 一种结晶温度可调的Ga30Sb70/Sb80Te20纳米复合多层相变薄膜材料 |
CN102544355B (zh) * | 2010-12-09 | 2014-12-24 | 中国科学院上海微系统与信息技术研究所 | 相变存储材料及其制备方法、具有相变存储材料的存储器及其制备方法 |
CN102227015B (zh) * | 2011-05-24 | 2015-07-01 | 中国科学院上海微系统与信息技术研究所 | 一种相变存储材料及其制备方法 |
CN102339951B (zh) * | 2011-06-15 | 2016-01-20 | 中国科学院上海微系统与信息技术研究所 | 一种dram相变存储单元及用于替代dram的相变存储器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5534712A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5933365A (en) * | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
EP1171920B1 (en) * | 1999-03-25 | 2006-11-29 | OVONYX Inc. | Electrically programmable memory element with improved contacts |
US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
-
2003
- 2003-12-03 CN CNB2003801071076A patent/CN100521277C/zh not_active Expired - Fee Related
- 2003-12-05 CN CNB2003801066260A patent/CN100533755C/zh not_active Expired - Fee Related
- 2003-12-05 CN CNB2003801064975A patent/CN100401547C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253140A (zh) * | 2013-06-28 | 2014-12-31 | 国际商业机器公司 | 电阻型随机存取存储器单元 |
US9530493B2 (en) | 2013-06-28 | 2016-12-27 | International Business Machines Corporation | Resistive random-access memory cells |
CN104253140B (zh) * | 2013-06-28 | 2018-02-02 | 国际商业机器公司 | 电阻型随机存取存储器单元 |
Also Published As
Publication number | Publication date |
---|---|
CN1729583A (zh) | 2006-02-01 |
CN100401547C (zh) | 2008-07-09 |
CN100533755C (zh) | 2009-08-26 |
CN1729575A (zh) | 2006-02-01 |
CN100521277C (zh) | 2009-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1576670B1 (en) | Electric device with phase change material and parallel heater | |
US7119353B2 (en) | Electric device with phase change material and method of manufacturing the same | |
EP1787329B1 (en) | Electric device comprising phase change material | |
US9000408B2 (en) | Memory device with low reset current | |
US7459717B2 (en) | Phase change memory cell and manufacturing method | |
US7729161B2 (en) | Phase change memory with dual word lines and source lines and method of operating same | |
CN1808736A (zh) | 相变存储单元和形成其的方法 | |
CN1897292A (zh) | 半导体存储器 | |
CN1819297A (zh) | 侧壁有源接脚存储器及其制造方法 | |
CN1873996A (zh) | 相变随机存取存储器及其操作方法 | |
CN1507088A (zh) | 横向相变存储器及其制造方法 | |
US8916845B2 (en) | Low operational current phase change memory structures | |
US11744165B2 (en) | Memory devices and methods of forming the same | |
US20140147965A1 (en) | Heating phase change material | |
US20210057489A1 (en) | Memory cell manufacturing method | |
CN100401547C (zh) | 具有相变材料的电子器件及其制造方法 | |
US20130200328A1 (en) | Phase change memory devices | |
KR100795908B1 (ko) | 발열 구조체를 구비하는 반도체 장치 및 그 형성 방법 | |
US11038106B1 (en) | Phase change memory cell with a metal layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070914 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070914 Address after: Holland Ian Deho Finn Applicant after: NXP B.V. Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: III HOLDINGS 6, LLC Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20150902 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150902 Address after: Delaware Patentee after: III Holdings 6 LLC Address before: Holland Ian Deho Finn Patentee before: NXP B.V. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080709 |
|
CF01 | Termination of patent right due to non-payment of annual fee |