CN1723292A - 高纯镍/钒溅射构件和制备溅射构件的方法 - Google Patents

高纯镍/钒溅射构件和制备溅射构件的方法 Download PDF

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Publication number
CN1723292A
CN1723292A CNA2003801053523A CN200380105352A CN1723292A CN 1723292 A CN1723292 A CN 1723292A CN A2003801053523 A CNA2003801053523 A CN A2003801053523A CN 200380105352 A CN200380105352 A CN 200380105352A CN 1723292 A CN1723292 A CN 1723292A
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CN
China
Prior art keywords
vanadium
nickel
particle size
sputter
weight
Prior art date
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Pending
Application number
CNA2003801053523A
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English (en)
Chinese (zh)
Inventor
W·郭
S·P·图尔纳
E·F·考利
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Honeywell International Inc
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Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1723292A publication Critical patent/CN1723292A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
CNA2003801053523A 2002-12-09 2003-11-24 高纯镍/钒溅射构件和制备溅射构件的方法 Pending CN1723292A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43216602P 2002-12-09 2002-12-09
US60/432,166 2002-12-09

Publications (1)

Publication Number Publication Date
CN1723292A true CN1723292A (zh) 2006-01-18

Family

ID=32507860

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2003801053523A Pending CN1723292A (zh) 2002-12-09 2003-11-24 高纯镍/钒溅射构件和制备溅射构件的方法

Country Status (8)

Country Link
US (2) US20040108028A1 (ko)
EP (1) EP1579019A2 (ko)
JP (1) JP2006509109A (ko)
KR (1) KR20050085232A (ko)
CN (1) CN1723292A (ko)
AU (1) AU2003291159A1 (ko)
TW (1) TW200418996A (ko)
WO (1) WO2004052785A2 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101660123A (zh) * 2008-08-28 2010-03-03 长沙天鹰金属材料有限公司 一种镍基靶材及生产工艺
CN106290425A (zh) * 2016-07-13 2017-01-04 东莞中子科学中心 一种用于制备中子散射实验样品盒的钒镍合金及其应用
CN110468382A (zh) * 2019-09-12 2019-11-19 南京达迈科技实业有限公司 一种含微量元素的大管径Ni-V旋转靶材及其制备方法
CN114318255A (zh) * 2021-12-09 2022-04-12 贵研铂业股份有限公司 一种由易氧化金属镀膜保护制备的高致密NiV合金溅射靶材及其制备方法

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EP1654395B1 (en) * 2003-08-11 2010-07-14 Honeywell International Inc. Target/backing plate constructions, and methods of forming them
US8871144B2 (en) * 2003-10-07 2014-10-28 Jx Nippon Mining & Metals Corporation High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
US20050249981A1 (en) * 2004-05-10 2005-11-10 Heraeus, Inc. Grain structure for magnetic recording media
US20050274221A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060078457A1 (en) * 2004-10-12 2006-04-13 Heraeus, Inc. Low oxygen content alloy compositions
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US20060286414A1 (en) * 2005-06-15 2006-12-21 Heraeus, Inc. Enhanced oxide-containing sputter target alloy compositions
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US20070253103A1 (en) * 2006-04-27 2007-11-01 Heraeus, Inc. Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
JP5808066B2 (ja) 2011-05-10 2015-11-10 エイチ．シー．スターク インク． 複合ターゲット
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9903212B2 (en) * 2013-07-30 2018-02-27 Siemens Aktiengesellschaft Mechanical joining using additive manufacturing process
CN104014767B (zh) * 2014-06-05 2016-05-04 贵研铂业股份有限公司 一种制备NiV合金靶材的方法
CN111549324A (zh) * 2020-06-17 2020-08-18 宁波江丰电子材料股份有限公司 一种NiV合金靶材及其成型的方法与用途
CN112899627B (zh) * 2021-01-16 2022-09-27 重庆电子工程职业学院 一种靶材安装结构、磁控溅射设备及磁控溅射方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876180A (en) * 1953-12-14 1959-03-03 Horizons Titanium Corp Fused salt bath for the electrodeposition of transition metals
US3294481A (en) * 1962-12-05 1966-12-27 Burwell Blair Process for recovering pure vanadium oxide from low grade vanadium ores or concentrates
US3320024A (en) * 1963-07-05 1967-05-16 Burwell Blair Process of recovering high purity vanadium compositions
US4552820A (en) * 1984-04-25 1985-11-12 Lin Data Corporation Disc media
US4610720A (en) * 1984-05-16 1986-09-09 The United States Of America As Represented By The Department Of Energy Method for preparing high purity vanadium
US4895592A (en) * 1987-12-14 1990-01-23 Eastman Kodak Company High purity sputtering target material and method for preparing high purity sputtering target materials
US6341114B1 (en) * 1999-03-23 2002-01-22 Michael Anh Nguyen Universal loader platform for optical storage device
US6342114B1 (en) * 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
US6827828B2 (en) * 2001-03-29 2004-12-07 Honeywell International Inc. Mixed metal materials

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101660123A (zh) * 2008-08-28 2010-03-03 长沙天鹰金属材料有限公司 一种镍基靶材及生产工艺
CN101660123B (zh) * 2008-08-28 2013-08-14 长沙天鹰金属材料有限公司 一种镍基靶材及生产工艺
CN106290425A (zh) * 2016-07-13 2017-01-04 东莞中子科学中心 一种用于制备中子散射实验样品盒的钒镍合金及其应用
CN110468382A (zh) * 2019-09-12 2019-11-19 南京达迈科技实业有限公司 一种含微量元素的大管径Ni-V旋转靶材及其制备方法
WO2021046928A1 (zh) * 2019-09-12 2021-03-18 南京达迈科技实业有限公司 一种含微量元素的大管径Ni-V旋转靶材及其制备方法
CN110468382B (zh) * 2019-09-12 2021-04-09 南京达迈科技实业有限公司 一种含微量元素的大管径Ni-V旋转靶材及其制备方法
CN114318255A (zh) * 2021-12-09 2022-04-12 贵研铂业股份有限公司 一种由易氧化金属镀膜保护制备的高致密NiV合金溅射靶材及其制备方法
CN114318255B (zh) * 2021-12-09 2022-09-16 贵研铂业股份有限公司 一种由易氧化金属镀膜保护制备的高致密NiV合金溅射靶材及其制备方法

Also Published As

Publication number Publication date
TW200418996A (en) 2004-10-01
JP2006509109A (ja) 2006-03-16
AU2003291159A8 (en) 2004-06-30
US20040108028A1 (en) 2004-06-10
US20050230013A1 (en) 2005-10-20
EP1579019A2 (en) 2005-09-28
WO2004052785A3 (en) 2005-06-16
KR20050085232A (ko) 2005-08-29
AU2003291159A1 (en) 2004-06-30
WO2004052785B1 (en) 2005-07-21
WO2004052785A2 (en) 2004-06-24

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