AU2003291159A8 - High purity nickel/vanadium sputtering components;and methods of making sputtering components - Google Patents

High purity nickel/vanadium sputtering components;and methods of making sputtering components

Info

Publication number
AU2003291159A8
AU2003291159A8 AU2003291159A AU2003291159A AU2003291159A8 AU 2003291159 A8 AU2003291159 A8 AU 2003291159A8 AU 2003291159 A AU2003291159 A AU 2003291159A AU 2003291159 A AU2003291159 A AU 2003291159A AU 2003291159 A8 AU2003291159 A8 AU 2003291159A8
Authority
AU
Australia
Prior art keywords
sputtering components
methods
high purity
vanadium
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003291159A
Other versions
AU2003291159A1 (en
Inventor
Edward F Cawley
Stephen P Turner
Wei Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003291159A1 publication Critical patent/AU2003291159A1/en
Publication of AU2003291159A8 publication Critical patent/AU2003291159A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
AU2003291159A 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components Abandoned AU2003291159A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43216602P 2002-12-09 2002-12-09
US60/432,166 2002-12-09
PCT/US2003/037463 WO2004052785A2 (en) 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components

Publications (2)

Publication Number Publication Date
AU2003291159A1 AU2003291159A1 (en) 2004-06-30
AU2003291159A8 true AU2003291159A8 (en) 2004-06-30

Family

ID=32507860

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003291159A Abandoned AU2003291159A1 (en) 2002-12-09 2003-11-24 High purity nickel/vanadium sputtering components; and methods of making sputtering components

Country Status (8)

Country Link
US (2) US20040108028A1 (en)
EP (1) EP1579019A2 (en)
JP (1) JP2006509109A (en)
KR (1) KR20050085232A (en)
CN (1) CN1723292A (en)
AU (1) AU2003291159A1 (en)
TW (1) TW200418996A (en)
WO (1) WO2004052785A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004028129D1 (en) * 2003-08-11 2010-08-26 Honeywell Int Inc TARGET / SUPPORT PLATE CONSTRUCTIONS AND METHOD OF MANUFACTURING THEREOF
CN100516266C (en) * 2003-10-07 2009-07-22 日矿金属株式会社 High-purity Ni-V alloy, target therefrom, high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
US20050249981A1 (en) * 2004-05-10 2005-11-10 Heraeus, Inc. Grain structure for magnetic recording media
US20050274221A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US20060078457A1 (en) * 2004-10-12 2006-04-13 Heraeus, Inc. Low oxygen content alloy compositions
US20060110626A1 (en) * 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
US20060286414A1 (en) * 2005-06-15 2006-12-21 Heraeus, Inc. Enhanced oxide-containing sputter target alloy compositions
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US20070253103A1 (en) * 2006-04-27 2007-11-01 Heraeus, Inc. Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target
CN101660123B (en) * 2008-08-28 2013-08-14 长沙天鹰金属材料有限公司 Nickel-based target and production process
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
KR20170016024A (en) 2011-05-10 2017-02-10 에이치. 씨. 스타아크 아이앤씨 Multi-block sputtering target and associated methods and articles
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
US9903212B2 (en) * 2013-07-30 2018-02-27 Siemens Aktiengesellschaft Mechanical joining using additive manufacturing process
CN104014767B (en) * 2014-06-05 2016-05-04 贵研铂业股份有限公司 A kind of method of preparing NiV alloy target material
CN106290425A (en) * 2016-07-13 2017-01-04 东莞中子科学中心 A kind of vanadium nickel alloy for preparing neutron scattering experiment sample box and application thereof
CN110468382B (en) * 2019-09-12 2021-04-09 南京达迈科技实业有限公司 Large-diameter Ni-V rotary target containing trace elements and preparation method thereof
CN111549324A (en) * 2020-06-17 2020-08-18 宁波江丰电子材料股份有限公司 NiV alloy target material and forming method and application thereof
CN112899627B (en) * 2021-01-16 2022-09-27 重庆电子工程职业学院 Target mounting structure, magnetron sputtering equipment and magnetron sputtering method
CN114318255B (en) * 2021-12-09 2022-09-16 贵研铂业股份有限公司 High-density NiV alloy sputtering target material prepared by easily-oxidized metal coating protection and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876180A (en) * 1953-12-14 1959-03-03 Horizons Titanium Corp Fused salt bath for the electrodeposition of transition metals
US3294481A (en) * 1962-12-05 1966-12-27 Burwell Blair Process for recovering pure vanadium oxide from low grade vanadium ores or concentrates
US3320024A (en) * 1963-07-05 1967-05-16 Burwell Blair Process of recovering high purity vanadium compositions
US4552820A (en) * 1984-04-25 1985-11-12 Lin Data Corporation Disc media
US4610720A (en) * 1984-05-16 1986-09-09 The United States Of America As Represented By The Department Of Energy Method for preparing high purity vanadium
US4895592A (en) * 1987-12-14 1990-01-23 Eastman Kodak Company High purity sputtering target material and method for preparing high purity sputtering target materials
US6341114B1 (en) * 1999-03-23 2002-01-22 Michael Anh Nguyen Universal loader platform for optical storage device
US6342114B1 (en) * 1999-03-31 2002-01-29 Praxair S.T. Technology, Inc. Nickel/vanadium sputtering target with ultra-low alpha emission
US6827828B2 (en) * 2001-03-29 2004-12-07 Honeywell International Inc. Mixed metal materials

Also Published As

Publication number Publication date
AU2003291159A1 (en) 2004-06-30
CN1723292A (en) 2006-01-18
WO2004052785B1 (en) 2005-07-21
US20050230013A1 (en) 2005-10-20
JP2006509109A (en) 2006-03-16
US20040108028A1 (en) 2004-06-10
TW200418996A (en) 2004-10-01
WO2004052785A3 (en) 2005-06-16
EP1579019A2 (en) 2005-09-28
KR20050085232A (en) 2005-08-29
WO2004052785A2 (en) 2004-06-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase