WO2004052785A3 - High purity nickel/vanadium sputtering components; and methods of making sputtering components - Google Patents
High purity nickel/vanadium sputtering components; and methods of making sputtering components Download PDFInfo
- Publication number
- WO2004052785A3 WO2004052785A3 PCT/US2003/037463 US0337463W WO2004052785A3 WO 2004052785 A3 WO2004052785 A3 WO 2004052785A3 US 0337463 W US0337463 W US 0337463W WO 2004052785 A3 WO2004052785 A3 WO 2004052785A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sputtering components
- methods
- components
- high purity
- vanadium
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004559157A JP2006509109A (en) | 2002-12-09 | 2003-11-24 | High purity nickel / vanadium sputtering component; and method of manufacturing the sputtering component |
AU2003291159A AU2003291159A1 (en) | 2002-12-09 | 2003-11-24 | High purity nickel/vanadium sputtering components; and methods of making sputtering components |
EP03783754A EP1579019A2 (en) | 2002-12-09 | 2003-11-24 | High purity nickel/vanadium sputtering components; and methods of making sputtering components |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43216602P | 2002-12-09 | 2002-12-09 | |
US60/432,166 | 2002-12-09 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004052785A2 WO2004052785A2 (en) | 2004-06-24 |
WO2004052785A3 true WO2004052785A3 (en) | 2005-06-16 |
WO2004052785B1 WO2004052785B1 (en) | 2005-07-21 |
Family
ID=32507860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/037463 WO2004052785A2 (en) | 2002-12-09 | 2003-11-24 | High purity nickel/vanadium sputtering components; and methods of making sputtering components |
Country Status (8)
Country | Link |
---|---|
US (2) | US20040108028A1 (en) |
EP (1) | EP1579019A2 (en) |
JP (1) | JP2006509109A (en) |
KR (1) | KR20050085232A (en) |
CN (1) | CN1723292A (en) |
AU (1) | AU2003291159A1 (en) |
TW (1) | TW200418996A (en) |
WO (1) | WO2004052785A2 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602004028129D1 (en) * | 2003-08-11 | 2010-08-26 | Honeywell Int Inc | TARGET / SUPPORT PLATE CONSTRUCTIONS AND METHOD OF MANUFACTURING THEREOF |
KR100773238B1 (en) * | 2003-10-07 | 2007-11-02 | 닛코킨조쿠 가부시키가이샤 | HIGH PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY |
US7832619B2 (en) * | 2004-02-27 | 2010-11-16 | Howmet Corporation | Method of making sputtering target |
US20050249981A1 (en) * | 2004-05-10 | 2005-11-10 | Heraeus, Inc. | Grain structure for magnetic recording media |
US20050274221A1 (en) * | 2004-06-15 | 2005-12-15 | Heraeus, Inc. | Enhanced sputter target alloy compositions |
US20050277002A1 (en) * | 2004-06-15 | 2005-12-15 | Heraeus, Inc. | Enhanced sputter target alloy compositions |
US20060042938A1 (en) * | 2004-09-01 | 2006-03-02 | Heraeus, Inc. | Sputter target material for improved magnetic layer |
US20060078457A1 (en) * | 2004-10-12 | 2006-04-13 | Heraeus, Inc. | Low oxygen content alloy compositions |
US20060110626A1 (en) * | 2004-11-24 | 2006-05-25 | Heraeus, Inc. | Carbon containing sputter target alloy compositions |
US20060286414A1 (en) * | 2005-06-15 | 2006-12-21 | Heraeus, Inc. | Enhanced oxide-containing sputter target alloy compositions |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
US20070253103A1 (en) * | 2006-04-27 | 2007-11-01 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
CN101660123B (en) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | Nickel-based target and production process |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
KR20170016024A (en) | 2011-05-10 | 2017-02-10 | 에이치. 씨. 스타아크 아이앤씨 | Multi-block sputtering target and associated methods and articles |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
US9903212B2 (en) * | 2013-07-30 | 2018-02-27 | Siemens Aktiengesellschaft | Mechanical joining using additive manufacturing process |
CN104014767B (en) * | 2014-06-05 | 2016-05-04 | 贵研铂业股份有限公司 | A kind of method of preparing NiV alloy target material |
CN106290425A (en) * | 2016-07-13 | 2017-01-04 | 东莞中子科学中心 | A kind of vanadium nickel alloy for preparing neutron scattering experiment sample box and application thereof |
CN110468382B (en) * | 2019-09-12 | 2021-04-09 | 南京达迈科技实业有限公司 | Large-diameter Ni-V rotary target containing trace elements and preparation method thereof |
CN111549324A (en) * | 2020-06-17 | 2020-08-18 | 宁波江丰电子材料股份有限公司 | NiV alloy target material and forming method and application thereof |
CN112899627B (en) * | 2021-01-16 | 2022-09-27 | 重庆电子工程职业学院 | Target mounting structure, magnetron sputtering equipment and magnetron sputtering method |
CN114318255B (en) * | 2021-12-09 | 2022-09-16 | 贵研铂业股份有限公司 | High-density NiV alloy sputtering target material prepared by easily-oxidized metal coating protection and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552820A (en) * | 1984-04-25 | 1985-11-12 | Lin Data Corporation | Disc media |
US4895592A (en) * | 1987-12-14 | 1990-01-23 | Eastman Kodak Company | High purity sputtering target material and method for preparing high purity sputtering target materials |
EP1041170A2 (en) * | 1999-03-31 | 2000-10-04 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
US20020139667A1 (en) * | 2001-03-29 | 2002-10-03 | Guangxin Wang | Methods for electrically forming materials; and mixed metal materials |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2876180A (en) * | 1953-12-14 | 1959-03-03 | Horizons Titanium Corp | Fused salt bath for the electrodeposition of transition metals |
US3294481A (en) * | 1962-12-05 | 1966-12-27 | Burwell Blair | Process for recovering pure vanadium oxide from low grade vanadium ores or concentrates |
US3320024A (en) * | 1963-07-05 | 1967-05-16 | Burwell Blair | Process of recovering high purity vanadium compositions |
US4610720A (en) * | 1984-05-16 | 1986-09-09 | The United States Of America As Represented By The Department Of Energy | Method for preparing high purity vanadium |
US6341114B1 (en) * | 1999-03-23 | 2002-01-22 | Michael Anh Nguyen | Universal loader platform for optical storage device |
-
2003
- 2003-11-24 AU AU2003291159A patent/AU2003291159A1/en not_active Abandoned
- 2003-11-24 KR KR1020057009819A patent/KR20050085232A/en not_active Application Discontinuation
- 2003-11-24 CN CNA2003801053523A patent/CN1723292A/en active Pending
- 2003-11-24 EP EP03783754A patent/EP1579019A2/en not_active Withdrawn
- 2003-11-24 JP JP2004559157A patent/JP2006509109A/en not_active Withdrawn
- 2003-11-24 WO PCT/US2003/037463 patent/WO2004052785A2/en not_active Application Discontinuation
- 2003-11-25 US US10/720,231 patent/US20040108028A1/en not_active Abandoned
- 2003-12-09 TW TW092134690A patent/TW200418996A/en unknown
-
2005
- 2005-06-08 US US11/148,596 patent/US20050230013A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552820A (en) * | 1984-04-25 | 1985-11-12 | Lin Data Corporation | Disc media |
US4895592A (en) * | 1987-12-14 | 1990-01-23 | Eastman Kodak Company | High purity sputtering target material and method for preparing high purity sputtering target materials |
EP1041170A2 (en) * | 1999-03-31 | 2000-10-04 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
US20020139667A1 (en) * | 2001-03-29 | 2002-10-03 | Guangxin Wang | Methods for electrically forming materials; and mixed metal materials |
Also Published As
Publication number | Publication date |
---|---|
US20040108028A1 (en) | 2004-06-10 |
EP1579019A2 (en) | 2005-09-28 |
AU2003291159A8 (en) | 2004-06-30 |
JP2006509109A (en) | 2006-03-16 |
WO2004052785A2 (en) | 2004-06-24 |
TW200418996A (en) | 2004-10-01 |
CN1723292A (en) | 2006-01-18 |
KR20050085232A (en) | 2005-08-29 |
AU2003291159A1 (en) | 2004-06-30 |
US20050230013A1 (en) | 2005-10-20 |
WO2004052785B1 (en) | 2005-07-21 |
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