CN1710431A - P-shape differential electric-field micro-sensor - Google Patents
P-shape differential electric-field micro-sensor Download PDFInfo
- Publication number
- CN1710431A CN1710431A CN 200510040658 CN200510040658A CN1710431A CN 1710431 A CN1710431 A CN 1710431A CN 200510040658 CN200510040658 CN 200510040658 CN 200510040658 A CN200510040658 A CN 200510040658A CN 1710431 A CN1710431 A CN 1710431A
- Authority
- CN
- China
- Prior art keywords
- type
- oxide semiconductor
- metal oxide
- pipe
- raceway groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
An p-type differential electric field micro transducer consists of p channel electric field transducer , p channel depletion type of metal oxide semiconductor tube , N metal oxide semiconductor tube current mirror and p metal oxide semiconductor tube , It features forming N metal oxide semiconductor tube current mirror by two N metal oxide semiconductor tubes , connecting P channel electric field transducer to its depletion type and connecting p metal oxide semiconductor tube source electrode to power source and its grid to bias voltage.
Description
Technical field
The present invention relates to a kind of electric-field microsensor, relate in particular to a kind of P type differential electric field micro sensor that in microelectromechanical systems, uses.
Background technology
When using single EMOS pipe electric-field microsensor test electric field, because the carrier concentration of carrier mobility and doped semiconductor all can be subjected to Temperature Influence, therefore measurement result can change with variation of temperature, and neighbourhood noise also can produce very big influence to measurement result.
Summary of the invention
The invention provides a kind of N type differential electric field micro sensor that temperature is floated that suppresses.
The present invention adopts following technical scheme:
A kind of N type differential electric field micro sensor that is used for electrical field test, by p raceway groove electric-field sensor, p channel depletion type MOS (metal-oxide-semiconductor) transistor, N type metal oxide semiconductor tube current mirror and P-type mos pipe are formed, N type metal oxide semiconductor tube current mirror is made up of 2 N type metal oxide semiconductor pipes, the source electrode of 2 N type metal oxide semiconductor pipes links to each other and ground connection, its gate interconnection also is connected with the drain electrode of one of them N type metal oxide semiconductor pipe and the drain electrode of this N type metal oxide semiconductor pipe is connected with the drain electrode of p raceway groove electric-field sensor, the drain electrode of above-mentioned another N type metal oxide semiconductor pipe be connected with the drain electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor and this node as output terminal, the source electrode of p raceway groove electric-field sensor is connected with the source electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor and is connected with the drain electrode of P-type mos pipe, the source electrode of P-type mos pipe is connected with power supply, and the grid of P-type mos pipe connects bias voltage.
Compared with prior art, the present invention has following advantage:
When (1) detecting electric field, owing to there is grid EPMOS ' can not be subjected to electric field effects, and the technology of EPMOS and EPMOS ' is identical, therefore the difference mode signal that has only electric field to cause is exaggerated, and other all common-mode signals, float the noise signal that signal, environment cause as the temperature that causes by temperature, all will be suppressed.
(2) the present invention has also adopted a kind of special p raceway groove electric-field sensor, these technical measures are utilized the drift principle of electric charge in the doped semiconductor, and (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge), induction field statically, thus improved the reliability that electric field detects; Utilize the raceway groove of high breadth length ratio and on raceway groove, add small electric current, improved the resolution that electric field detects.
Description of drawings
Fig. 1 is a circuit diagram of the present invention.
Fig. 2 is the sectional view of p raceway groove electric-field sensor of the present invention.
Embodiment
A kind of N type differential electric field micro sensor that is used for electrical field test, by p raceway groove electric-field sensor EPMOS1, p channel depletion type MOS (metal-oxide-semiconductor) transistor EPMOS ' 2, N type metal oxide semiconductor tube current mirror and P-type mos pipe PMOS5 form, N type metal oxide semiconductor tube current mirror is by 2 N type metal oxide semiconductor pipe NMOS3, NMOS4 forms, 2 N type metal oxide semiconductor pipe NMOS3, the source electrode of NMOS4 links to each other and ground connection Vss, its gate interconnection also is connected with the drain electrode of one of them N type metal oxide semiconductor pipe NMOS3 and the drain electrode of this N type metal oxide semiconductor pipe NMOS3 is connected with the drain electrode of p raceway groove electric-field sensor EPMOS1, the drain electrode of above-mentioned another N type metal oxide semiconductor pipe NMOS4 be connected with the drain electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor EPMOS ' 2 and this node as output end vo ut, the source electrode of p raceway groove electric-field sensor EPMOS1 is connected with the source electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor EPMOS ' 2 and is connected with the drain electrode of P-type mos pipe PMOS5, the source electrode of P-type mos pipe PMOS5 is connected with power supply Vdd, the grid of P-type mos pipe PMOS5 meets bias voltage Vb, present embodiment can adopt following specific p raceway groove electric-field sensor EPMOS1, this p raceway groove electric-field sensor EPMOS1 comprises n type substrate 11, on substrate 11, be provided with coplanar two heavily doped P type contact regions 13, on heavily doped P type contact region 13 is metal lead wire 15, between these two heavily doped P type contact regions, be provided with P type raceway groove 12 and be attached thereto respectively, in P type contact region 13 and the surface of P type raceway groove 12 be provided with SiO
2Layer 14.
The present invention utilizes the standard electric field to demarcate the output current of this circuit earlier before use.When measuring electric field, then by the output current of metering circuit, the contrast calibration value can obtain the intensity of incident electric field, and can adopt and be prepared as follows technology and prepare, that is: ion injects and obtains the p trap on n type substrate Si; B: growth end oxygen forms surperficial SiO
2Layer; Long field oxide is given birth in the etching place; Deposit Al and etching, the grid region of formation NMOS, PMOS, EPMOS '; Implanted channel forms p type raceway groove; Ion injects, and forms the source-drain area of contact region, NMOS and PMOS; Lithography fair lead, depositing metal and etching form metal lead wire.
Claims (2)
1, a kind of N type differential electric field micro sensor that is used for electrical field test, it is characterized in that by p raceway groove electric-field sensor (EPMOS1), p channel depletion type MOS (metal-oxide-semiconductor) transistor (EPMOS ' 2), N type metal oxide semiconductor tube current mirror and P-type mos pipe (PMOS5) are formed, N type metal oxide semiconductor tube current mirror is by 2 N type metal oxide semiconductor pipe (NMOS3, NMOS4) form, 2 N type metal oxide semiconductor pipe (NMOS3, NMOS4) source electrode links to each other and ground connection (Vss), its gate interconnection also is connected with the drain electrode of one of them N type metal oxide semiconductor pipe (NMOS3) and the drain electrode of this N type metal oxide semiconductor pipe (NMOS3) is connected with the drain electrode of p raceway groove electric-field sensor (EPMOS1), the drain electrode of above-mentioned another N type metal oxide semiconductor pipe (NMOS4) be connected with the drain electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor (EPMOS ' 2) and this node as output terminal (Vout), the source electrode of p raceway groove electric-field sensor (EPMOS1) is connected and is connected with the drain electrode of P-type mos pipe (PMOS5) with the source electrode of p channel depletion type MOS (metal-oxide-semiconductor) transistor (EPMOS ' 2), the source electrode of P-type mos pipe (PMOS5) is connected with power supply (Vdd), and the grid of P-type mos pipe (PMOS5) connects bias voltage (Vb).
2, N type differential electric field micro sensor according to claim 1, it is characterized in that p raceway groove electric-field sensor (EPMOS1) comprises n type substrate (11), on substrate (11), be provided with coplanar two heavily doped P type contact regions (13), going up in heavily doped P type contact region (13) is metal lead wire (15), between these two heavily doped P type contact regions, be provided with P type raceway groove (12) and be attached thereto respectively, in P type contact region (13) and the surface of P type raceway groove (12) be provided with SiO
2Layer (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100406586A CN1332209C (en) | 2005-06-22 | 2005-06-22 | P-shape differential electric-field micro-sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100406586A CN1332209C (en) | 2005-06-22 | 2005-06-22 | P-shape differential electric-field micro-sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1710431A true CN1710431A (en) | 2005-12-21 |
| CN1332209C CN1332209C (en) | 2007-08-15 |
Family
ID=35706698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100406586A Expired - Fee Related CN1332209C (en) | 2005-06-22 | 2005-06-22 | P-shape differential electric-field micro-sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1332209C (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164673A (en) * | 1989-11-13 | 1992-11-17 | Rosener Kirk W | Induced electric field sensor |
| CN1052072C (en) * | 1993-07-07 | 2000-05-03 | 株式会社东金 | Electric field sensor |
-
2005
- 2005-06-22 CN CNB2005100406586A patent/CN1332209C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1332209C (en) | 2007-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7211459B2 (en) | Fabrication method of an ion sensitive field effect transistor | |
| US8878258B2 (en) | Detector of biological or chemical material and corresponding array of detectors | |
| KR20090062373A (en) | High sensitive fet sensor and fabrication method for the fet sensor | |
| CA2572485A1 (en) | Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants. | |
| US9719959B2 (en) | Hydrogen ion sensor | |
| CN102770743A (en) | Pressure sensor | |
| Khanna | Fabrication of ISFET microsensor by diffusion-based Al gate NMOS process and determination of its pH sensitivity from transfer characteristics | |
| CN1332209C (en) | P-shape differential electric-field micro-sensor | |
| CN1325922C (en) | N type differential electric field micro sensor | |
| CN217590753U (en) | TFT-based operational amplification circuit for ion sensitive detection application | |
| CN103855177B (en) | Imageing sensor | |
| Lee et al. | A novel SiNW/CMOS hybrid biosensor for high sensitivity/low noise | |
| CN1330968C (en) | Micro electric field sensor based on P-type metal-oxide transistor structure | |
| JPH0620133B2 (en) | MOSFET device | |
| US7723668B2 (en) | Photodetector arrangement, measurement arrangement with a photodetector arrangement and process for operating a measurement arrangement | |
| JP2011085557A (en) | Semiconductor sensor and method for manufacturing the same | |
| CN100383539C (en) | Bridge-type electric-field microsensor | |
| TWI414787B (en) | Sensitive field effect transistor apparatus | |
| CN102683377A (en) | Double-drain type CMOS magnetic field induction transistor and fabricating method thereof | |
| JPH0369159A (en) | Semiconductor device | |
| CN1693909A (en) | Micro electric field sensor based on N-type metal-oxide transistor structure | |
| CN100362355C (en) | Miniature anti-radiation electric field sensor | |
| KR100544235B1 (en) | High sensitive photodector with nano size channel width | |
| Zaborowski et al. | From FinFET to nanowire ISFET | |
| CN102790072A (en) | Integrated hall device and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070815 Termination date: 20100622 |