CN100362355C - Miniature anti-radiation electric field sensor - Google Patents
Miniature anti-radiation electric field sensor Download PDFInfo
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- CN100362355C CN100362355C CNB2005100402833A CN200510040283A CN100362355C CN 100362355 C CN100362355 C CN 100362355C CN B2005100402833 A CNB2005100402833 A CN B2005100402833A CN 200510040283 A CN200510040283 A CN 200510040283A CN 100362355 C CN100362355 C CN 100362355C
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- electric field
- type contact
- silicon
- contact zones
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Abstract
The present invention discloses a miniature anti-radiation electric field sensor, which is used for collecting electric field signals. The miniature anti-radiation electric field sensor comprises a silicon substrate, wherein the silicon substrate is provided with an insulation layer; the surface of the insulation layer is provided with n type silicon; two heavily doped n type contact zones are poured on the n type silicon; an n type ditch is arranged between the two n type contact zones, and the two n type contact zones are connected through the n type ditch; SiO2 layers are arranged on the n type contact zones and the n type ditch; the heavily doped n type contact zones are provided with metal leading wires. The present invention has the advantages that a drifting principle of electric charges in a doped semiconductor is utilized to statically induce an electric field, which enhances the reliability of the present invention consequently; because of the blocking of the insulation layer of insulation silicon, ions radiated into a structure can not reach the heavily doped n type contact zones, so the anti-radiation of the structure is realized.
Description
Technical field
The present invention relates to a kind of micro field sensor that is used to gather electric field signal, relate in particular to a kind of miniature anti-radiation electric field sensor.
Background technology
The principle of induction of existing electric-field microsensor mainly is the principle of dynamically responding to, and promptly uses resonance structure alternately to stop the conductor of induction field, thereby produces induction current.The major defect of the micro electric field sensor of this dynamic induction is: have relatively high expectations to processing line owing to little resonance structure (1), and the encapsulation of bascule is difficult, therefore uses its reliability of micro electric field sensor of this structure relatively poor.(2) adopt the principle of dynamic induction field to make its resolution not high (highest resolution of report is 630V/m at present).
Summary of the invention
The invention provides the high and radiation-resistant miniature anti-radiation electric field sensor of a kind of reliability.
The present invention adopts following technical scheme:
A kind of miniature anti-radiation electric field sensor that is used to gather electric field signal, comprise silicon substrate, on silicon substrate, be provided with insulation course, be provided with n type silicon at surface of insulating layer, on n type silicon, be marked with two heavily doped n type contact regions, between two n type contact regions, be provided with n type raceway groove and two n type contact regions and link to each other, on n type contact region and n type raceway groove, be provided with SiO by n type raceway groove
2Layer is provided with metal lead wire on heavily doped n type contact region.
Compared with prior art, the present invention has following advantage:
(1) the present invention utilizes the drift principle (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge) of electric charge in the doped semiconductor, induction field statically, thus improved reliability of the present invention.
(2) since the insulation course of Silicon-On-Insulator stop that the ion that is radiated inside configuration can not arrive heavy doping n type contact region, therefore realized the radioresistance of structure.
Description of drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a vertical view of the present invention.
Fig. 3 is a raceway groove sectional view of the present invention.
Embodiment
A kind of miniature anti-radiation electric field sensor that is used to gather electric field signal, comprise silicon substrate 1, on silicon substrate 1, be provided with insulation course 11, be provided with (about 01 μ m) n type silicon 2 on insulation course 11 surfaces, on n type silicon 2, be marked with two heavily doped n type contact regions 3, between two n type contact regions 3, be provided with n type raceway groove 6 and two n type contact regions 3 and link to each other, on n type contact region 3 and n type raceway groove 6, be provided with (about 50nm) SiO by n type raceway groove 6
2Layer 4 is provided with metal lead wire 5 on heavily doped n type contact region 3.
After two heavily doped contact regions of n type of the present invention add voltage, when the n type raceway groove of external electrical field incident electric-field microsensor, charge carrier in the raceway groove (electronics) can increase accordingly, thereby channel current is increased, and promptly Wai Jie electric field has caused the variation of channel current.During use, utilize the standard electric field to demarcate the channel current of this electric-field microsensor earlier.When measuring electric field, then by measuring the channel current of microsensor, the contrast calibration value can obtain the intensity of incident electric field.
The present invention adopts following technology to prepare:
A: growth end oxygen on the n of Silicon-On-Insulator structure type Si forms surperficial SiO
2Layer;
B: ion injects, and forms the contact region;
C: lithography fair lead, depositing metal and etching form metal lead wire.
Claims (1)
1. miniature anti-radiation electric field sensor that is used to gather electric field signal, it is characterized in that comprising silicon substrate (1), on silicon substrate (1), be provided with insulation course (11), be provided with n type silicon (2) on insulation course (11) surface, on n type silicon (2), be marked with two heavily doped n type contact regions (3), between two n type contact regions (3), be provided with n type raceway groove (6), and two n type contact regions (3) are continuous by n type raceway groove (6), are provided with SiO on n type contact region (3) and n type raceway groove (6)
2Layer (4) is provided with metal lead wire (5) on heavily doped n type contact region (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402833A CN100362355C (en) | 2005-05-27 | 2005-05-27 | Miniature anti-radiation electric field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402833A CN100362355C (en) | 2005-05-27 | 2005-05-27 | Miniature anti-radiation electric field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1693910A CN1693910A (en) | 2005-11-09 |
| CN100362355C true CN100362355C (en) | 2008-01-16 |
Family
ID=35352968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100402833A Expired - Fee Related CN100362355C (en) | 2005-05-27 | 2005-05-27 | Miniature anti-radiation electric field sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100362355C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107796997A (en) * | 2017-09-28 | 2018-03-13 | 河南汇纳科技有限公司 | A kind of charged ion detection means based on LoRa |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2253941A (en) * | 1991-03-18 | 1992-09-23 | Iskra Stevci Ind Merilne In Up | Hall-effect sensors incorporated in CMOS integrated circuits |
| CN1109220A (en) * | 1993-09-20 | 1995-09-27 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN1402357A (en) * | 2001-08-01 | 2003-03-12 | 日本电气株式会社 | Field effect transistor and mfg. method thereof, and liquid crystal display device and mfg. method thereof |
| CN1490883A (en) * | 2002-09-10 | 2004-04-21 | �ձ�������ʽ���� | Thin-film semiconductor device and producing method thereof |
| WO2005013376A1 (en) * | 2003-07-31 | 2005-02-10 | Mitsuteru Kimura | Semiconductor magnetic sensor and magnetism measuring instrument using same |
-
2005
- 2005-05-27 CN CNB2005100402833A patent/CN100362355C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2253941A (en) * | 1991-03-18 | 1992-09-23 | Iskra Stevci Ind Merilne In Up | Hall-effect sensors incorporated in CMOS integrated circuits |
| CN1109220A (en) * | 1993-09-20 | 1995-09-27 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN1402357A (en) * | 2001-08-01 | 2003-03-12 | 日本电气株式会社 | Field effect transistor and mfg. method thereof, and liquid crystal display device and mfg. method thereof |
| CN1490883A (en) * | 2002-09-10 | 2004-04-21 | �ձ�������ʽ���� | Thin-film semiconductor device and producing method thereof |
| WO2005013376A1 (en) * | 2003-07-31 | 2005-02-10 | Mitsuteru Kimura | Semiconductor magnetic sensor and magnetism measuring instrument using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1693910A (en) | 2005-11-09 |
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Granted publication date: 20080116 Termination date: 20100527 |