CN104062026B - Temperature sensor - Google Patents
Temperature sensor Download PDFInfo
- Publication number
- CN104062026B CN104062026B CN201310095743.7A CN201310095743A CN104062026B CN 104062026 B CN104062026 B CN 104062026B CN 201310095743 A CN201310095743 A CN 201310095743A CN 104062026 B CN104062026 B CN 104062026B
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- Prior art keywords
- resistance
- electric capacity
- temperature sensor
- converting circuit
- frequency converting
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000007769 metal material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Thermistors And Varistors (AREA)
Abstract
The invention discloses a temperature sensor. The temperature sensor comprises a resistor of which the resistance is changed along with temperature and a resistance-frequency switching circuit used for converting the resistance change into frequency change; the resistor and the resistance-frequency switching circuit are located in the same chip; the resistor is formed through a metal layer in the resistance-frequency switching circuit. Compared with a traditional temperature sensor which uses a metal resistor in the chip, the resistance of the resistor of the temperature sensor can be linearly changed along with the temperature so that the temperature measurement is more precise, and the detection range is wider; because the resistor is integrated in the chip, the temperature sensor is smaller in volume and lower in cost.
Description
Technical field
The present invention relates to a kind of temperature sensor, more particularly to a kind of thermistor temperature sensor.
Background technology
Traditional temperature sensor includes a resistance, usually 503ET resistance, an and R-F（Resistance-frequency）Circuit
Chip,（Resistance-frequency）Circuit chip can be converted to the change of resistance the change of frequency.Operationally, resistance is with temperature
Change resistance can change, resistance-frequency circuit measures the change of resistance, is converted into the change of frequency, according to frequency
The change of rate is such that it is able to measuring the change of temperature.
Traditional temperature sensor, as shown in figure 1, generally including resistance frequency converting circuit, it includes electric capacity 10, ratio
Compared with module 20 and counting module 30, the first end of the resistance is connected to low level and high level, the resistance by switch 40
50 the second end connects the first end of electric capacity 10, the second end connection low level of the electric capacity 10, the second end of the resistance 50
The input of connection comparison module 20, the outfan connection count module 30 of the comparison module 20；
When the end of resistance 50 second current potential less than comparison module 20 setting value then comparison module 20 control it is described switch 40
Making the first end connection high potential of the resistance 50 makes the electric capacity 10 charge, when the current potential at the end of resistance 50 second is higher than to compare mould
The setting value of block 20 then comparison module 20 control it is described switch 40 make the resistance 50 first end connect electronegative potential make the electricity
Hold 10 to discharge；
The counting module 30 is used to measure the discharge and recharge frequency of the electric capacity 10, so as to the resistance for obtaining resistance 50 becomes
Change, further obtain the change of the temperature of resistance 50.But in traditional temperature sensor, the resistance 50 is using discrete
Resistance, such as 503ET resistance, but this resistance changes with thermal index：R=e-T/T0, therefore linear poor, measurement
Temperature it is very limited, the precision of temperature range 0.1 can only be measured.
The content of the invention
Present invention solves the technical problem that being that existing temperature sensor degree of accuracy is poor.
In order to solve the above problems, the invention provides a kind of temperature sensor, including：
Resistance, varies with temperature resistance；
Resistance frequency converting circuit, for resistance variations to be converted to into frequency change；
The resistance and resistance frequency converting circuit are located in same chip；
The resistance is the resistance formed using the metal level in resistance frequency converting circuit.
Wherein, the resistance frequency converting circuit include electric capacity, comparison module and counting module, the first of the resistance
End is connected to low level and high level by switch, and the second end of the resistance connects the first end of electric capacity, and the of the electric capacity
Two ends connect low level, and the second end of the resistance connects the input of comparison module, the outfan connection of the comparison module
Counting module；
When the end of resistance second current potential less than comparison module setting value then comparison module control it is described switch make the electricity
The first end connection high potential of resistance makes the electric capacity charge, when the current potential at the end of resistance second then compares higher than the setting value of comparison module
Switch described compared with module control makes the first end connection electronegative potential of the resistance make the electric capacity discharge；
The counting module is used to measure the discharge and recharge frequency of the electric capacity, so as to obtain the change in resistance of resistance, enters one
Step obtains the change of resistance temperature.
Wherein, the electric capacity is the electric capacity formed using metal level.
A kind of forming method of temperature sensor, including step：
Semiconductor substrate is provided；
The MOS device in the resistance frequency converting circuit is formed on a semiconductor substrate；
Metal material is deposited in MOS device, interconnection line and resistance is formed.
Wherein, also include that deposit metal material forms electric capacity after the deposit metal material.
Compared with prior art, the present invention has advantages below：
The temperature sensor of the present invention employs the metallic resistance in chip compared to traditional temperature sensor, so makes
Obtain resistance value to change with temperature linearity, so as to the measurement of temperature is more accurate, detection range is wider, due to resistance is integrated in into chip
Interior, hence in so that the volume of temperature sensor is less, cost is lower.
Description of the drawings
One exemplary embodiment is more fully described by referring to accompanying drawing, above and other feature and advantage are for ability
Field technique personnel will be apparent from, in accompanying drawing：
Fig. 1 is the structural representation of existing temperature sensor；
Fig. 2 is the structural representation of the temperature sensor of the present invention；
Fig. 3 is the circuit diagram of the temperature sensor of the present invention.
Specific embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Elaborate detail in order to fully understand the present invention in the following description.But the present invention can with it is various not
It is same as alternate manner described here to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not limited by following public specific embodiment.
Fig. 2 is the structural representation of the forming method according to the temperature sensor of one embodiment of the invention.With reference to
Fig. 2 is described in detail to the structure of the temperature sensor of the present invention.
As shown in Fig. 2 in the present embodiment, temperature sensor includes semiconductor base 100, has in semiconductor base 100
There are MOS circuits 110, for example, can be the measuring circuit or drive circuit of resistance frequency converting circuit and temperature sensor.
There is metal interconnecting wires 120 and resistance 130 on semiconductor base 100, the metal interconnecting wires 120 be used to carrying out resistance-
The internal conductive interconnections of freq converting circuit.In the present embodiment, as shown in figure 3, resistance frequency converting circuit includes electric capacity
210th, comparison module 220 and counting module 230, structure can be identical with of the prior art, therefore repeats no more.
The first end of the resistance 130 is connected to low level and high level by switch 240, and the second of the resistance 130
The first end of end connection electric capacity 210, the second end connection low level of the electric capacity 210, the second end connection ratio of the resistance 130
Compared with the input of module 220, the outfan connection count module 230 of the comparison module 220；
Less than the setting value of comparison module 220, then comparison module 220 controls the switch to current potential when the end of resistance 130 second
240 make the first end of the resistance 130 connect high potential makes the electric capacity 210 charge, when the current potential at the end of resistance 130 second is higher than
Then comparison module 220 controls the switch 240 and makes the first end of the resistance 130 connect low electricity the setting value of comparison module 220
Position makes the electric capacity 210 discharge；
The counting module 230 is used to measure the discharge and recharge frequency of the electric capacity 210, so as to obtain the resistance of resistance 130
Change, further obtains the change of the temperature of resistance 130.
The resistance 130 and metal interconnecting wires 120 are located at same layer, are formed in same step, and the resistance 130 can be
Ring is filled or spring-like.
Wherein comparison module 20 can include two comparators, and an input of first comparator 221 and second compares
One input of device 222 is connected to the second end of resistance 130, and another input of first comparator 221 connects high level,
The second input connection low level of the second comparator 222, the outfan connection of the comparator 222 of first comparator 221 and second
To logic circuit 240, the switch 240 of the control connection first end of resistance 130.
The resistance 130 for varying with temperature resistance of the temperature sensor in the present embodiment is using resistance frequency converting electricity
The resistance that the metal interconnecting wires on road are formed with the metal level of floor, therefore be integrated in same chip with resistance frequency converting circuit,
Inventor has found that such resistance changes with temperature linearity so that the measurement of temperature is more accurate, and detection range is wider, due to
Resistance is integrated in chip, hence in so that the volume of temperature sensor is less, cost is lower.
Further, with reference to Fig. 2, the first pole plate 210a of the electric capacity 210 and metal interconnecting wires 120 are located at same layer,
Region beyond MOS device 110, the second pole plate 210b of electric capacity 210 is located at the top and the first pole of the first pole plate 210a
Plate 210a is relative.Electric capacity 210 is also integrated in resistance frequency converting chip, so as to further reduce volume, carry
High accuracy.
The forming method of the temperature sensor of the present invention is illustrated below in conjunction with the accompanying drawings.In the forming method of the present invention
Including step：Semiconductor substrate is provided；The MOS device layer in the resistance frequency converting circuit is formed on a semiconductor substrate；
Metal material is deposited on MOS device layer, interconnection line and resistance is formed.
In a specific embodiment of the present invention, the forming method of temperature sensor is specific as follows：
First provide Semiconductor substrate 100, the Semiconductor substrate 100 can be monocrystal silicon, germanium or silicon Germanium compound or
Any one in its combination.
Then, MOS device 110 is formed on a semiconductor substrate 100, for example, can form p-type doped layer and n-type doping
Layer, and polycrystalline silicon grid layer is formed on, so as to form MOS device, and contact hole is formed wherein.
The first insulating barrier 115 is formed in MOS device 110, for example, can deposit the insulation such as silicon dioxide or silicon nitride
Material.
First insulating barrier 115 is etched, groove is formed；The figure such as the interconnection layer to be formed using photoresist definition and resistance
Case, using corresponding position is etched in groove is formed.Deposit metal material, the metal material can be copper, form metal mutual
Line 120 and the resistance 130.Deposit metal material filling groove, and remove unnecessary metal material using cmp
Material, so as to form metal interconnecting wires and resistance.
In addition the first insulating barrier can not also be etched, metal material is directly deposited, the metal material is then etched
Form metal interconnecting wires and resistance.The metal material can be aluminum.
The present invention utilizes the step of forming resistance frequency converting circuit while forming resistance, so as to save processing step,
And resistance is integrated in resistance frequency converting circuit so as to be compared with lead connection split circuit device with existing,
Volume is reduced, degree of accuracy is improve so that the temperature of temperature sensor measurement is more accurate.
Further, also including the electric capacity 210 of discharge and recharge, the electric capacity utilizes metal interconnecting wires to resistance-frequency change-over circuit
Deposit metal material while, form a pole plate 210a of electric capacity, the region beyond pole plate correspondence MOS device, in gold
Dielectric layer is formed on category interconnection line and pole plate 210a, metal is deposited again on dielectric layer, another pole plate 210b of electric capacity is formed.
Although the present invention is disclosed as above with preferred embodiment, the present invention is not limited to this.Any art technology
Personnel, without departing from the spirit and scope of the present invention, can make various changes or modifications, therefore protection scope of the present invention should
When being defined by claim limited range.
Claims (5)
1. a kind of temperature sensor, it is characterised in that include：
Resistance, varies with temperature resistance；
Resistance frequency converting circuit, for resistance variations to be converted to into frequency change；
The resistance and resistance frequency converting circuit are located in same chip；
The resistance is the resistance formed using the metal level in resistance frequency converting circuit.
2. temperature sensor as claimed in claim 1, it is characterised in that the resistance frequency converting circuit includes electric capacity, ratio
Compared with module and counting module, the first end of the resistance is connected to low level and high level by switch, and the second of the resistance
The first end of end connection electric capacity, the second end connection low level of the electric capacity, the second end connection comparison module of the resistance
Input, the outfan connection count module of the comparison module；
When the end of resistance second current potential less than comparison module setting value then comparison module control it is described switch make the resistance
First end connection high potential makes the electric capacity charge, when the current potential at the end of resistance second then compares mould higher than the setting value of comparison module
The described switch of block control makes the first end connection electronegative potential of the resistance make the electric capacity discharge；
The counting module is used to measure the discharge and recharge frequency of the electric capacity, so as to obtain the change in resistance of resistance, further
To the change of resistance temperature.
3. temperature sensor as claimed in claim 2, it is characterised in that the electric capacity is using resistance frequency converting circuit
In metal level formed electric capacity.
4. the forming method of the temperature sensor described in a kind of claim 1, it is characterised in that including step：
Semiconductor substrate is provided；
The MOS device in the resistance frequency converting circuit is formed on a semiconductor substrate；
Metal material is deposited in MOS device, interconnection line and resistance is formed.
5. the forming method of temperature sensor as claimed in claim 4, it is characterised in that also wrap after the deposit metal material
Include deposit metal material and form electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095743.7A CN104062026B (en) | 2013-03-22 | 2013-03-22 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095743.7A CN104062026B (en) | 2013-03-22 | 2013-03-22 | Temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104062026A CN104062026A (en) | 2014-09-24 |
| CN104062026B true CN104062026B (en) | 2017-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310095743.7A Active CN104062026B (en) | 2013-03-22 | 2013-03-22 | Temperature sensor |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104777885A (en) * | 2015-04-08 | 2015-07-15 | 南京机电职业技术学院 | Power consumption system of supervisory computer |
| CN104757989A (en) * | 2015-04-24 | 2015-07-08 | 王彬 | Automation back lying examination bed for CT room |
| CN106404208B (en) * | 2016-09-08 | 2019-11-15 | 四川长虹空调有限公司 | A kind of method detecting electromotor winding temperature and the equipment comprising motor |
| CN110275558A (en) * | 2019-06-27 | 2019-09-24 | 北京淳中科技股份有限公司 | A kind of method, apparatus of chip controls, equipment and medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201497594U (en) * | 2009-08-20 | 2010-06-02 | 南京航空航天大学 | High-precision platinum resistance temperature measuring device |
| CN102042882A (en) * | 2009-10-02 | 2011-05-04 | 意法半导体(胡希)公司 | Device for the detection of temperature variations in a chip |
| CN202210472U (en) * | 2011-08-19 | 2012-05-02 | 上海丽恒光微电子科技有限公司 | Capacitor and electronic device having the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114943A (en) * | 1999-05-26 | 2000-09-05 | Ut-Battelle, L.L.C. | Resistive hydrogen sensing element |
| CN101639391B (en) * | 2009-09-07 | 2012-07-04 | 哈尔滨工业大学 | Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof |
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2013
- 2013-03-22 CN CN201310095743.7A patent/CN104062026B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201497594U (en) * | 2009-08-20 | 2010-06-02 | 南京航空航天大学 | High-precision platinum resistance temperature measuring device |
| CN102042882A (en) * | 2009-10-02 | 2011-05-04 | 意法半导体(胡希)公司 | Device for the detection of temperature variations in a chip |
| CN202210472U (en) * | 2011-08-19 | 2012-05-02 | 上海丽恒光微电子科技有限公司 | Capacitor and electronic device having the same |
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| CN104062026A (en) | 2014-09-24 |
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Denomination of invention: Temperature sensor Effective date of registration: 20220110 Granted publication date: 20170426 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. Registration number: Y2022310000004 |
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Date of cancellation: 20230505 Granted publication date: 20170426 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. Registration number: Y2022310000004 |
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Effective date of registration: 20230530 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: Room 501B, Building 5, 3000 Longdong Avenue, Zhangjiang High-tech Park, Pudong New Area, Shanghai, 201203 Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |