CN107091697B - Temperature sensor based on through silicon via, temperature measuring method and electronic device - Google Patents
Temperature sensor based on through silicon via, temperature measuring method and electronic device Download PDFInfo
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- CN107091697B CN107091697B CN201610090910.2A CN201610090910A CN107091697B CN 107091697 B CN107091697 B CN 107091697B CN 201610090910 A CN201610090910 A CN 201610090910A CN 107091697 B CN107091697 B CN 107091697B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
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Abstract
The invention relates to a temperature sensor based on a through silicon via, a temperature measuring method and an electronic device. The temperature sensor includes: a through-silicon via capacitor having a capacitance value that varies with temperature; a capacitance sensing and amplifying unit for outputting an amplified capacitance difference signal based on a capacitance value change of the through-silicon via capacitor; and the capacitance temperature conversion unit is used for converting the capacitance difference signal into a temperature signal. The temperature sensor comprises a through silicon via capacitor, a capacitance sensing and amplifying unit and a capacitance temperature conversion unit, wherein the capacitance value of the through silicon via capacitor changes along with the change of temperature, the capacitance sensing and amplifying unit outputs an amplified capacitance difference signal based on the capacitance value change of the through silicon via capacitor, and the capacitance temperature conversion unit converts the capacitance difference signal into a temperature signal, so that the temperature can be accurately monitored by the method.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a temperature sensor based on a through silicon via, a temperature measuring method and an electronic device.
Background
In the field of electronic consumption, multifunctional devices are more and more popular with consumers, and compared with devices with simple functions, the manufacturing process of multifunctional devices is more complicated, for example, a plurality of chips with different functions need to be integrated on a circuit board, so that 3D Integrated Circuit (IC) technology is developed, and a 3D Integrated Circuit (IC) is defined as a system-level integrated structure, and a plurality of chips are stacked in a vertical plane direction, thereby saving space.
Therefore, at present, Through Silicon Vias (TSVs) are mostly used in the 3D IC technology, the TSVs are vertical interconnects penetrating Through a Silicon wafer or a chip, the TSVs can be stacked with a plurality of chips, small holes are drilled in the chips (the manufacturing process can be divided into a first drilling process and a second drilling process, namely, Via Fist and Via Last), metal is filled from the bottom, holes are drilled in the Silicon wafer in an etching or laser manner (Via), and then conductive materials such as copper, polysilicon, tungsten and the like are filled in the Silicon wafer, so that the interconnects between different Silicon wafers are realized.
As transistor density continues to increase, leakage currents and parasitic capacitances in-line also continue to increase, forcing the need for higher temperatures in practical IC integration, and thermal management becomes a major bottleneck in 3D integrated circuits.
There are many shortcomings in temperature monitoring in through silicon vias and 3D integrated circuit processes, and improvements are needed.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention provides a through silicon via-based temperature sensor, which comprises:
a through-silicon via capacitor having a capacitance value that varies with temperature;
a capacitance sensing and amplifying unit for outputting an amplified capacitance difference signal based on a capacitance value change of the through-silicon via capacitor;
and the capacitance temperature conversion unit is used for converting the capacitance difference signal into a temperature signal.
Optionally, the through silicon via capacitor is a depletion through silicon via capacitor, and a capacitance value of the depletion through silicon via capacitor becomes larger with increasing temperature.
Optionally, the capacitance sensing and amplifying unit includes a capacitance sensing unit and a subtraction amplifier, which are connected in sequence.
Optionally, the capacitance sensing unit is a differential capacitance sensor, and the differential capacitance sensor includes a reference capacitor and a comparator.
Optionally, the reference capacitor is connected to an inverting input of the comparator, and the through-silicon-via capacitor is connected to a non-inverting input of the comparator.
Optionally, the through-silicon via capacitor is disposed in a semiconductor substrate, and includes:
a through-silicon via body as an internal electrode;
the dielectric layer and the depletion region are sequentially arranged on the outer side of the silicon through hole main body from inside to outside;
and the doped region serving as an external electrode is arranged on the outer side of the depletion region to form the through silicon via capacitor together with the through silicon via main body, the dielectric layer and the depletion region.
Optionally, the capacitance of the reference capacitor does not change with temperature, and the capacitance value of the reference capacitor is set to be the capacitance value of the through silicon via capacitor at 25 ℃.
The invention also provides a temperature measuring method based on the temperature sensor, which comprises the following steps:
and measuring the capacitance value change of the through-silicon-via capacitor through a capacitance sensing and amplifying unit, outputting an amplified capacitance difference signal, and converting the amplified capacitance difference signal into a temperature signal through a capacitance temperature conversion unit.
Optionally, the through silicon via capacitor is a depletion through silicon via capacitor, and a capacitance value of the depletion through silicon via capacitor becomes larger with increasing temperature.
The invention also provides an electronic device which comprises the temperature sensor.
The temperature sensor comprises a through silicon via capacitor, a capacitance sensing and amplifying unit and a capacitance temperature conversion unit, wherein the capacitance value of the through silicon via capacitor changes along with the change of temperature, the capacitance sensing and amplifying unit outputs an amplified capacitance difference signal based on the capacitance value change of the through silicon via capacitor, and the capacitance temperature conversion unit converts the capacitance difference signal into a temperature signal.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. There are shown in the drawings, embodiments and descriptions thereof, which are used to explain the principles and apparatus of the invention. In the drawings, there is shown in the drawings,
fig. 1 is a schematic structural diagram of a through-silicon-via based temperature sensor according to the present invention.
FIG. 2 is a schematic structural diagram of a capacitance sensing and amplifying unit in the through silicon via based temperature sensor according to the present invention;
FIG. 3 is a schematic structural diagram of the TSV based temperature sensor in accordance with one embodiment of the present invention;
fig. 4 is an external view of an example of a mobile phone handset in the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
In order to solve the problems in the prior art, the present invention provides a through silicon via-based temperature sensor, as shown in fig. 1, the temperature sensor 100 includes:
a through-silicon via capacitor 101 whose capacitance value changes with a change in temperature;
a capacitance sensing and amplifying unit 102 for outputting an amplified capacitance difference signal based on a capacitance value change of the through-silicon via capacitor;
and the capacitance temperature conversion unit 103 is used for converting the capacitance difference signal into a temperature signal.
The temperature sensor realizes temperature sensing based on the capacitance change in the silicon through hole, and can accurately monitor the temperature. The temperature sensor does not need to be additionally arranged in the chip, so that the area of the chip is reduced, the temperature sensor does not need an additional process, and is formed simultaneously in the process of preparing the through silicon via, so that the process is simplified, and the process cost is reduced.
Example one
In order to solve the problems in the prior art, the invention provides a through silicon via-based temperature sensor, which comprises: a through silicon via capacitor 101, a capacitance sensing and amplifying unit 102, and a capacitance temperature conversion unit 103.
The through silicon via capacitor is a depletion type through silicon via capacitor, and the capacitance value of the through silicon via capacitor is increased along with the increase of temperature.
Specifically, the through-silicon-via capacitor is disposed in a semiconductor substrate, as shown in fig. 3, and includes:
a through-silicon via body as an internal electrode;
the dielectric layer and the depletion region are sequentially arranged on the outer side of the silicon through hole main body from inside to outside;
the doped region serving as an external electrode is arranged on the outer side of the depletion region to form the through silicon via capacitor together with the through silicon via main body, the dielectric layer and the depletion region;
wherein the through-silicon via is formed in a semiconductor substrate, and the semiconductor substrate may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator-silicon-germanium (S-SiGeOI), silicon-on-insulator-silicon-germanium (SiGeOI), and the like. Other active regions or active devices may be formed in the substrate and will not be described in detail herein.
The through silicon via is embedded in the semiconductor substrate and comprises a conducting layer positioned in the center, and a blocking layer and a dielectric layer which surround the conducting layer, wherein the conducting layer is made of a metal material, the metal material comprises one or more of Pt, Au, Cu, Ti and W, polycrystalline silicon can be selected, the conducting layer is not limited to one of Pt, Au, Cu, Ti and W, the conducting layer can realize a conducting function, the metal Cu is preferably selected, the cost can be reduced, the process for forming the through silicon via by selecting the metal Cu is well compatible with the existing process, and the process is simplified.
The barrier layer is formed between the dielectric layer and the through-silicon via in a thickness of 300-500 angstroms in order to improve adhesion of metal filled in the through-silicon via, and comprises one or more of titanium nitride TiN and titanium Ti, and in a specific embodiment of the invention, the titanium nitride TiN and the titanium Ti are preferably stacked as an upper layer and a lower layer.
The dielectric layer is an insulating layer with a thickness of 1000-3000 angstroms, but is not limited to this range, the dielectric layer is used to prevent the metal subsequently filled into the through silicon via from conducting with the substrate, the insulating layer is preferably an oxide, and may be made of materials such as tetraethoxysilane stearate (SATEOS) or Tetraethoxysilane (TEOS), but is not limited to these materials.
Optionally, the through silicon via is cylindrical, and the dielectric layer, the depletion region, and the doped region are disposed around the through silicon via.
The doped region may be any type of doped region, and is not limited to a specific one.
Optionally, the through silicon via capacitor further includes an interconnection structure located above the through silicon via body and above the doped region to connect to the input terminal of the capacitance sensing unit and the non-inverting input terminal of the comparator, respectively.
Optionally, a depletion capacitance formed between the through-silicon via body and the depletion region becomes larger with the increase of temperature and changes regularly. The through silicon via comprises two capacitors, wherein one capacitor is a depletion capacitor (depletion capacitor) formed by the through silicon via body, the dielectric layer and the depletion region, and the other capacitor is an accumulation capacitor (accumulation capacitor), wherein the accumulation capacitor (accumulation capacitor) is basically kept unchanged, and the depletion capacitor (depletion capacitor) is changed regularly along with the change of temperature, so that a linear relation can be established between the change of the depletion capacitor and the change of the temperature, and a signal of the change of the temperature can be obtained after a capacitance signal is changed, and the temperature monitoring is realized.
Alternatively, as shown in fig. 2, the capacitance sensing and amplifying unit 102 includes a capacitance sensing unit 1021 and a subtraction amplifier 1022, which are connected in sequence.
Further, the capacitance sensing unit is a differential capacitance sensor including a reference capacitor and a comparator as shown in fig. 3.
Specifically, the reference capacitor is connected to an inverting input terminal of the comparator, and the through-silicon-via capacitor is connected to a non-inverting input terminal of the comparator.
More specifically, two ends of the reference capacitor are respectively connected to the input end of the capacitance sensing unit and the inverting input end of the comparator, and two ends of the through-silicon-via capacitor are respectively connected to the input end of the capacitance sensing unit and the non-inverting input end of the comparator, so as to compare the capacitance of the through-silicon-via capacitor with that of the reference capacitor.
The non-inverting input end of the subtraction amplifier is connected with the inverting input end of the comparator, and the inverting input end of the subtraction amplifier is connected with the non-inverting input end of the comparator and used for amplifying the output signal of the capacitance sensing unit.
Optionally, the capacitance of the reference capacitor does not change with temperature, for reference, e.g. the capacitance value of the reference capacitor is equal to the capacitance value of the through-silicon via capacitor at 25 ℃.
Further, at different temperatures, the capacitance difference value of the through-silicon-via capacitor and the reference capacitor corresponds to the temperature one by one, so that the capacitance difference value is converted into the temperature.
The temperature sensor realizes temperature sensing based on capacitance change in the silicon through hole, does not need to be additionally arranged in a chip, reduces the area of the chip, does not need an additional process, is formed simultaneously in the process of preparing the silicon through hole, simplifies the process and reduces the process cost.
In one embodiment of the present invention, the capacitance sensing unit is a differential capacitance sensor, which includes a reference capacitor and a comparator.
Specifically, the structures of the capacitance sensing unit and the subtraction amplifier are shown in fig. 3, where CReference to＝CTSV(25℃)。CTSVFor TSV depletion of capacitance, CTSV＝CReference to+ Δ C, wherein Δ C is temperature dependent.
Wherein two ends of the R1 are respectively connected to the inverting input terminal and the output terminal of the comparator, two ends of the R2 are respectively connected to the non-inverting input terminal and the output terminal of the comparator, and the R1 is equal to R2, and further, in the subtractor circuit, R4/R3 is equal to R6/R5 is equal to m
Wherein Vx-Vor ═ (Iin/2- Δ i) × R1;
wherein the Iin is an additional inputA constant current source. Iin is divided into two parts, one part flowing through CReference toThe other part flows through CTSV. In the presets (when the temperature is at 25 ℃), CReference to＝CTSVThus, the respective currents are Iin/2. In the present invention, however, CReference toIndependent of temperature, CTSVIs a function of temperature. Therefore, when the temperature changes, CTSVA change will occur, causing a change in the current flowing through the two branches, the amount of change being marked as Δ i. So the following relationship exists:
Vx-Vot ═ (Iin/2+ Δ i) R2, since R1 ═ R2 ═ R, Vor-Vot ═ 2 × Δ i × R;
iin/2- Δ i ═ C reference × d (Vi-Vx)/dt;
Iin/2+Δi＝CTSV×d(Vi-Vx)/dt。
in the figure, Vi denotes the potential of the branch point; therefore,. DELTA.i.Iin/2 × (CTSV-C)Ginseng radix (Panax ginseng C.A. Meyer)test)/(CTSV + C reference)
Since R4/R3 ═ R6/R5 ═ m, Vout ═ m × (Vor-Vot) ═ m × Iin × Δ C/(2 × C)Reference to+ΔC)；
So that Δ C is 2 × CReference toX Vout/(m x Iin-Vout), and the capacitance value Δ C has a certain one-to-one relationship with temperature. The temperature value can be derived by a capacitive temperature conversion unit.
The invention provides a through silicon via-based temperature sensor, which comprises: the device comprises a silicon through hole capacitor, a capacitance sensing and amplifying unit and a capacitance temperature conversion unit, wherein the hole capacitor comprises a silicon through hole main body serving as an inner electrode; the dielectric layer and the depletion region are sequentially arranged on the outer side of the silicon through hole main body from inside to outside; the doped region serving as an external electrode is arranged on the outer side of the depletion region to form the through silicon via capacitor together with the through silicon via main body, the dielectric layer and the depletion region, and the depletion capacitance formed between the through silicon via main body and the depletion region is increased along with the rise of temperature; the capacitance of the reference capacitor in the capacitance sensing and amplifying unit does not change along with the change of temperature, and the capacitance difference value of the through silicon via capacitor and the reference capacitor corresponds to the temperature one by one at different temperatures, so that the change of the temperature can be detected by converting the capacitance difference value into the temperature.
Example two
The invention also provides a temperature measuring method based on the temperature sensor in the first embodiment, which comprises the following steps:
and measuring the capacitance value change of the through-silicon-via capacitor through a capacitance sensing and amplifying unit, outputting an amplified capacitance difference signal, and converting the amplified capacitance difference signal into a temperature signal through a capacitance temperature conversion unit, thereby obtaining the temperature change.
Specifically, in the method, capacitances in the through-silicon-via capacitor and a reference capacitor are measured and compared through a capacitance sensing unit to obtain a capacitance comparison signal;
amplifying the comparison signal by the subtraction amplifier;
and converting the amplified signal into a temperature signal through a capacitance temperature conversion unit, thereby obtaining the change of the temperature.
Optionally, a depletion capacitance formed between the through-silicon via body and the depletion region becomes larger with the increase of temperature and changes regularly.
Optionally, the capacitance of the reference capacitor does not change with temperature, for reference, e.g., the capacitance value of the reference capacitor is equal to the capacitance of the through-silicon via capacitor at 25 ℃.
Further, at different temperatures, the capacitance difference value of the through-silicon-via capacitor and the reference capacitor corresponds to the temperature one by one, so that the capacitance difference value is converted into the temperature.
EXAMPLE III
The invention also provides an electronic device comprising the temperature sensor in the first embodiment.
The electronic device of this embodiment may be any electronic product or device, such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a television, a VCD, a DVD, a navigator, a digital photo frame, a camera, a video camera, a recording pen, an MP3, an MP4, a PSP, and the like, and may also be any intermediate product including a circuit. The electronic device of the embodiment of the invention has better performance due to the use of the circuit.
Wherein figure 4 shows an example of a mobile telephone handset. The mobile phone handset 200 is provided with a display portion 202, operation buttons 203, an external connection port 204, a speaker 205, a microphone 206, and the like, which are included in a housing 201.
The mobile phone comprises the temperature sensor in the first embodiment, and the temperature sensor can detect and monitor the temperature in the process in real time in the preparation and packaging processes of the mobile phone, so that the preparation and packaging processes are more controllable, and the performance and yield of the mobile phone are further improved.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A through-silicon-via based temperature sensor, the temperature sensor comprising:
a through-silicon via capacitor having a capacitance value that varies with temperature;
a capacitance sensing and amplifying unit for outputting an amplified capacitance difference signal based on a capacitance value change of the through-silicon via capacitor;
and the capacitance temperature conversion unit is used for converting the capacitance difference signal into a temperature signal so as to monitor the temperature.
2. The temperature sensor of claim 1, wherein the through-silicon-via capacitor is a depletion-mode through-silicon-via capacitor, and a capacitance value of the through-silicon-via capacitor increases with an increase in temperature.
3. The temperature sensor of claim 1, wherein the capacitive sensing and amplifying unit comprises a capacitive sensing unit and a subtraction amplifier connected in series.
4. The temperature sensor of claim 3, wherein the capacitive sensing cell is a differential capacitive sensor comprising a reference capacitor and a comparator.
5. The temperature sensor of claim 4, wherein the reference capacitor is connected to an inverting input of the comparator and the through-silicon via capacitor is connected to a non-inverting input of the comparator.
6. The temperature sensor of claim 1, wherein the through-silicon-via capacitor is disposed within a semiconductor substrate, comprising:
a through-silicon via body as an internal electrode;
the dielectric layer and the depletion region are sequentially arranged on the outer side of the silicon through hole main body from inside to outside;
and the doped region serving as an external electrode is arranged on the outer side of the depletion region to form the through silicon via capacitor together with the through silicon via main body, the dielectric layer and the depletion region.
7. The temperature sensor of claim 4, wherein the capacitance of the reference capacitor does not change with temperature, and the capacitance value of the reference capacitor is set to be a capacitance value of the through-silicon via capacitor at 25 ℃.
8. A temperature measurement method based on the temperature sensor according to any one of claims 1 to 7, characterized in that the method comprises:
and measuring the capacitance value change of the through-silicon-via capacitor through a capacitance sensing and amplifying unit, outputting an amplified capacitance difference signal, and converting the amplified capacitance difference signal into a temperature signal through a capacitance temperature conversion unit.
9. The method of claim 8, wherein the through silicon via capacitor is a depletion through silicon via capacitor, and the capacitance value of the depletion through silicon via capacitor becomes larger with the increase of temperature.
10. An electronic device, characterized in that it comprises a temperature sensor according to one of claims 1 to 7.
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| CN113432737A (en) | 2020-03-19 | 2021-09-24 | 长鑫存储技术有限公司 | Method for measuring and calibrating temperature of wafer chuck and temperature measuring system |
| CN113494968B (en) | 2020-03-19 | 2022-11-25 | 长鑫存储技术有限公司 | Temperature measurement and temperature calibration method and temperature measurement system |
| CN116007780A (en) * | 2023-02-20 | 2023-04-25 | 麦斯塔微电子(深圳)有限公司 | Temperature sensor, temperature measuring method and micro-electromechanical system oscillator |
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