CN106558634B - The manufacture method of photodiode and photodiode - Google Patents
The manufacture method of photodiode and photodiode Download PDFInfo
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- CN106558634B CN106558634B CN201510623624.3A CN201510623624A CN106558634B CN 106558634 B CN106558634 B CN 106558634B CN 201510623624 A CN201510623624 A CN 201510623624A CN 106558634 B CN106558634 B CN 106558634B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
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- 238000001312 dry etching Methods 0.000 claims description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The present invention discloses a kind of photodiode, it includes the first conduction type electrode district, the first conductivity type substrate, the second conduction type electrode district and conductive extension area.First conductivity type substrate is arranged on the first conduction type electrode district.The second conduction type electrode district is arranged in first conductivity type substrate.The conduction extension area surrounds the second conduction type electrode district, which longitudinally through first conductivity type substrate and connects the first conduction type electrode district.Above-mentioned photodiode, adds the conductive extension area that the first conductivity type substrate is run through in longitudinal direction around the second conduction type electrode district, it is possible to achieve having lateral depletion to edge under reverse bias, achievees the purpose that to improve photosensitive area utilization rate and reduce to leak electricity.Invention additionally discloses a kind of manufacture method of photodiode.
Description
Technical field
The present invention relates to photoelectric conversion technique field, a kind of photodiode and a kind of photodiode are related specifically to
Manufacture method.
Background technology
Photodiode, such as PIN photodiode, are a kind of sensors for converting optical signals into electric signal, its quilt
It is widely used in the fields such as medical machinery, industrial detection, safety detection and bar code scan.Difference with other photodiodes exists
In PIN photodiode has the advantages that fast response time, light ring high sensitivity and electric leakage is small.
Traditional PIN photodiode includes：The N-type semiconductor substrate being lightly doped is as I layers (intrinsic layers), substrate one side
The highly doped formation N-type region domain of N-type impurity is carried out, another side carries out the doping of part p-type and diffuses to form p type island region domain.Work in device
When need plus reverse biased, wide depleted region is produced in vertical and horizontal respectively, optical signal is converted into telecommunications in depleted region
Number.
But above-mentioned PIN photodiode, I layer material having lateral depletions can be caused under bias.This requires I layer materials
Laterally enough enough spaces are stayed to avoid having lateral depletion to edge, so as to reduce edge current leakage.This results in PIN photodiode
Area increase, I layer cannot all exhaust and cause photosensitive area utilization rate reduce.Meanwhile the area in unnecessary non-photo-sensing area
Also electric leakage can be increased.
The content of the invention
The embodiment of the present invention is intended at least solve one of technical problem existing in the prior art.For this reason, the present invention is implemented
Example needs to provide a kind of photodiode and a kind of manufacture method of photodiode.
A kind of photodiode, including：
First conduction type electrode district；
First conductivity type substrate, first conductivity type substrate are arranged on the first conduction type electrode district；
Second conduction type electrode district, the second conduction type electrode district are arranged in first conductivity type substrate；
Conductive extension area, the conduction extension area surround the second conduction type electrode district, which longitudinally runs through
First conductivity type substrate and connect the first conduction type electrode district.
Above-mentioned photodiode, longitudinal direction is added around the second conduction type electrode district and runs through the first conductivity type substrate
Conductive extension area, it is possible to achieve having lateral depletion to edge under reverse bias, reaches and improves photosensitive area utilization rate and reduction
The purpose of electric leakage.
In one embodiment, photodiode further includes：
First electrode, the first electrode are arranged on the bottom surface of the first conduction type electrode district and are electrically connected first conduction
Type electrode area, the first electrode and first conductivity type substrate both sides that to be located at the first conduction type electrode district opposite.
In one embodiment, photodiode further includes：
Second electrode, the second electrode are arranged on the second conduction type electrode district and are electrically connected second conduction type
Electrode district.
In one embodiment, photodiode further includes：
Anti-reflecting layer, the anti-reflecting layer are arranged on the second conduction type electrode district；
The anti-reflecting layer offers anti-reflecting layer opening, which wears the anti-reflecting layer opening.
In one embodiment, photodiode further includes：
Insulating layer, which is formed in the second conduction type electrode district and first conductivity type substrate, and covers
Lid is exposed to the end face of the conduction extension area of first conductivity type substrate；
The insulating layer offers insulating layer openings, which exposes the anti-reflecting layer and the second electrode.
In one embodiment, which includes：
Conductive layer；And
Electrode extension regions, the electrode extension regions surround the conductive layer, which is electrically connected the conductive layer.
In one embodiment, which includes：Depleted region, the conduction extension area are exhausted around this
Region.
In one embodiment, which includes：Photosensitive region, the photosensitive region are located at first conduction type electricity
Between polar region and the second conduction type electrode district.
A kind of manufacture method of photodiode, comprises the following steps：
The first conductivity type substrate is formed on the first conduction type electrode district；
The ring-shaped groove for running through first conductivity type substrate in longitudinal direction is formed in first conductivity type substrate；
Form conductive extension area in the ring-shaped groove, conduction extension area longitudinal direction run through first conductivity type substrate and
Connect the first conduction type electrode district；And
The second conduction type electrode district is formed in first conductivity type substrate, which second leads around this
Electric type electrode area.
Photodiode obtained by the manufacture method of above-mentioned photodiode, increases around the second conduction type electrode district
The conductive extension area of the first conductivity type substrate is run through in longitudinal direction, it is possible to achieve having lateral depletion to edge under reverse bias, reach
To the purpose for improving photosensitive area utilization rate and reduction electric leakage.
In one embodiment, it is described that first conductivity type substrate, bag are formed on the first conduction type electrode district
Include：
Formed by way of epitaxial growth or by way of bonding on the first conduction type electrode district this
One conductivity type substrate.
In one embodiment, the longitudinal direction that formed in first conductivity type substrate is served as a contrast through first conduction type
The ring-shaped groove at bottom, including：
The surface of first conductivity type substrate is aoxidized, and the annular ditch is formed by way of dry etching
Groove.
In one embodiment, it is described to form the conduction extension area in the ring-shaped groove, including：
The first conductive type impurity doping is carried out to the side wall of the ring-shaped groove to form electricity by way of gas phase doping
Pole extension area；
The ring-shaped groove formed with the electrode extension regions is filled using polycrystalline material, while to the polycrystalline material
First conductive type impurity doping is carried out to form conductive layer, which surrounds the conductive layer.
In one embodiment, it is described that the second conduction type electrode district, bag are formed in first conductivity type substrate
Include：
Second conduction type is formed in first conductivity type substrate by the way of surface impurity injects and spreads
Electrode district.
In one embodiment, the manufacture method of photodiode is further comprising the steps of：
First electrode is formed in the bottom surface of the first conduction type electrode district, which serves as a contrast with first conduction type
Bottom is located at the opposite both sides of the first conduction type electrode district.
In one embodiment, before the second conduction type electrode district is formed in first conductivity type substrate, also wrap
Include following steps：
First conductivity type substrate is surface-treated with the exposure conduction extension area；
To first conductivity type substrate carry out surface oxidation to form insulating layer, the insulating layer covering exposed to this first
The end face of the conduction extension area of conductivity type substrate, the insulating layer offer insulating layer openings；
It is described to form the second conduction type electrode district in first conductivity type substrate, including：
By way of the insulating layer openings and using surface impurity injection and diffusion in first conductivity type substrate
Form the second conduction type electrode district.
In one embodiment, the manufacture method of photodiode is further comprising the steps of：
Anti-reflecting layer is formed on the second conduction type electrode district.
In one embodiment, the manufacture method of photodiode is further comprising the steps of：
Anti-reflecting layer opening is formed in the anti-reflecting layer, which exposes the second conduction type electrode district
A part；
Second electrode is formed in the part of the second conduction type electrode district, which wears the antireflection
Layer opening.
The additional aspect and advantage of the embodiment of the present invention will be set forth in part in the description, and will partly be retouched from following
Become obvious in stating, or recognize by the practice of the embodiment of the present invention.
Brief description of the drawings
In description of the above-mentioned and/or additional aspect and advantage of the embodiment of the present invention from combination accompanying drawings below to embodiment
It will be apparent and be readily appreciated that, wherein：
Fig. 1 is the planar structure schematic diagram of the photodiode of present pre-ferred embodiments；
Fig. 2 is diagrammatic cross-section of the photodiode of Fig. 1 along A-B lines；
Fig. 3 is another planar structure schematic diagram of the photodiode of present pre-ferred embodiments；
Fig. 4 is the diagrammatic cross-section of the photodiode compared with the photodiode of present pre-ferred embodiments；
Fig. 5 is a step schematic diagram of the manufacture method of the photodiode of present pre-ferred embodiments；
Fig. 6 is another step schematic diagram of the manufacture method of the photodiode of present pre-ferred embodiments；
Fig. 7 is another step schematic diagram of the manufacture method of the photodiode of present pre-ferred embodiments；
Fig. 8 is another step schematic diagram of the manufacture method of the photodiode of present pre-ferred embodiments；
Fig. 9 is another step schematic diagram again of the manufacture method of the photodiode of present pre-ferred embodiments.
Embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein phase from beginning to end
Same or similar label represents same or similar element or has the function of same or like element.Below with reference to attached drawing
The embodiment of description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise " are based on orientation shown in the drawings or position relationship, are for only for ease of
Description is of the invention to be described with simplified, rather than the device or element of instruction or hint meaning must be with specific orientation, Yi Te
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, and it is not intended that instruction or hint relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, one or more this feature can be expressed or be implicitly included to the feature of " second ".At this
In the description of invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection or can mutually communicate；It can be directly connected, can also be by between intermediary
Connect connected, can be the interaction relationship of connection inside two elements or two elements.For the ordinary skill of this area
For personnel, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or it " under "
Can directly it be contacted including the first and second features, it is not directly to contact but pass through it that can also include the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " to include first special
Sign is directly over second feature and oblique upper, or is merely representative of fisrt feature level height and is higher than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.For letter
Change disclosure of the invention, hereinafter the component and setting of specific examples are described.Certainly, they are merely examples, and
It is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter, this
Kind repeats to be the relation between itself not indicating discussed various embodiments and/or setting for purposes of simplicity and clarity.
In addition, the present invention provides various specific techniques and material examples, but those of ordinary skill in the art will be appreciated that
To the application of other techniques and/or the use of other materials.
Please join Fig. 1 and Fig. 2, the photodiodes 100 of present pre-ferred embodiments include the first conduction type electrode district 12,
First conductivity type substrate 14, the second conduction type electrode district 16 and conductive extension area 18.
First conductivity type substrate 14 is arranged on the first conduction type electrode district 12.The second conduction type electrode
Area 16 is arranged in first conductivity type substrate 14.
The conduction extension area 18 surrounds the second conduction type electrode district 16, the longitudinal direction of the conduction extension area 18 through this first
Conductivity type substrate 14 and connect the first conduction type electrode district 12.
Specifically, photodiode 100 can be PIN photodiode.It please join Fig. 1, in the present embodiment, photodiode
100 be in substantially cylindrical shape.It is appreciated that in other embodiments, please join Fig. 3, photodiode 200 also can be substantially in length
Cube shape.Certainly, photodiode is alternatively other suitable shapes, will not enumerate herein.
First conduction type electrode district 12 can be the highly doped N-type region domain formed of progress N-type impurity.First conduction type
Electrode district 12 can be used as cathode zone.First conductivity type substrate 14 can be the N-type semiconductor substrate being lightly doped, the first conductive-type
Type substrate 14 can be used as I layers (intrinsic layers).
First conductivity type substrate 14 includes depleted region 20, which surrounds the depleted region 20.Should
Depleted region 20 includes photosensitive region 22, which is located at the first conduction type electrode district 12 and second conductive-type
Between type electrode district 16.
The material of first conductivity type substrate 14 includes but not limited to the materials such as silicon (Si), indium GaAs (InGaAs).The
The doping concentration of one conductivity type substrate 14 is than relatively low, and general control is in 5.0E14~2.0E11cm-3。
The thickness of first conductivity type substrate 14 can be adjusted according to the wavelength of optical signal, i.e., believe for the light of long wavelength
Number, corresponding the first thick conductivity type substrate 14.For the optical signal of short wavelength, corresponding the first thin conductivity type substrate 14.
Second conduction type electrode district 16 can spread the p type island region domain formed to carry out the doping of part p-type.Second conductive-type
Type electrode district 16 can be used as anode region.
The doping concentration of second conduction type electrode district 16 is high, by the first conductivity type substrate 14, being injected
And the mode of High temperature diffusion is formed.The concentration general control of injection is in 1.0E14~5.0E15cm-3。
The distance between second conduction type electrode district 16 and conductive extension area 18, can according to the distance of horizontal proliferation and
The region exhausted in the case of biasing is determined.With whole I layers of PIN photodiode 100 (be enclosed in conductive extension area 18 with
It is interior) all exhaust and be advisable.
Further, since the photodiode 100 of the present embodiment adds conductive extension area 18, depleted region 20 contains
Whole I layers of PIN photodiode 100.Usually, optical signal impinges perpendicularly on the photosurface of photodiode 100.
The optical signal of vertical incidence reaches the photosensitive region 22 in the first conductivity type substrate 14.Depleted region 20 it is other
Part, can not be photosensitive because there is no optical signal.
It please join Fig. 4, Fig. 4 is traditional photodiode 300, in Fig. 4, since I layers 302 do not have fully- depleted, if needed
Obtain same photosensitive region 304, then need I layers 302 sufficiently large so that will not having lateral depletion to edge.This allows for I layers
302 non-photo-sensing regions increase.
In the present embodiment, Fig. 2 please be join, relative to traditional photodiode, in the case of same photosensitive region, this reality
The photodiode 100 for applying example saves the non-photo-sensing area of I floor, so that the photosensitive area for adding photodiode 100 utilizes
Rate.Simultaneously as photodiode 100 reduces I layers of area, the electric leakage under the reverse biased of photodiode 100 is also
Reduction is arrived.
It is preferred that the conduction extension area 18 includes conductive layer 24 and electrode extension regions 26.The electrode extension regions 26 surround should
Conductive layer 24, electrode extension regions 26 are electrically connected conductive layer 24.
Electrode extension regions 26, such as cathode extension area, can be carried out conductive to first by RIE (reactive ion etching) technique
14 grooving of type substrates (Trench), from the upper surface of the first conductivity type substrate 14 to the first conduction type electrode district 12, so
Groove sidewall doping is carried out by way of High temperature diffusion afterwards, forms electrode extension regions 26.
Conductive layer 24 can fill up groove by way of polycrystalline material deposits and adulterates, and the effect of conductive layer 24 is to make electricity
Pole extension area 26 can equipotential, and then improve the conductive uniformity of conductive extension area 18, and can be further anticreep.
It is preferred that being electrically connected photodiode 100 for convenience of external circuit, photodiode 100 further includes first electrode
28 and second electrode 30.
The first electrode 28 is arranged on the bottom surface of the first conduction type electrode district 12 and is electrically connected first conduction type
Electrode district 12.To be located at the first conduction type electrode district 12 opposite two for the first electrode 28 and first conductivity type substrate 14
Side.For example, first electrode 28 can be cathode, aluminium can be selected in its material.
The second electrode 30 is arranged on the second conduction type electrode district 16 and is electrically connected the second conduction type electrode
Area 16.The second electrode 30 and first conductivity type substrate 14 both sides that to be located at the second conduction type electrode district 16 opposite.
For example, second electrode 30 can be anode, aluminium can be selected in its material.
It is preferred that to improve the light impingement rate of photodiode 100, photodiode 100 further includes anti-reflecting layer 32.
The anti-reflecting layer 32 is arranged on the second conduction type electrode district 16, the anti-reflecting layer 32 and first conductive-type
Type substrate 14 is located at the opposite both sides of the second conduction type electrode district 16.The material of anti-reflecting layer 32 is, for example, silicon nitride.
The anti-reflecting layer 32 offers anti-reflecting layer opening 34, and second electrode 30 wears the anti-reflecting layer opening 34.Anti-reflective
Penetrating layer opening 34 can for example be formed by way of dry etching.
It is preferred that to ensure that the end face of the conductive extension area 18 exposed to the first conductivity type substrate 14 is conductive not with second
Type electrode area 16 and second electrode 30 produce possible conduction, and photodiode 100 further includes insulating layer 36.
The insulating layer 36 is formed in the second conduction type electrode district 16 and first conductivity type substrate 14, and is covered
Exposed to the end face of the conduction extension area 18 of first conductivity type substrate 14.The material of insulating layer 36 is, for example, silica.
The insulating layer 36 offers insulating layer openings 38, which exposes the anti-reflecting layer 32 and second electricity
Pole 30.The insulating layer openings 38 can for example be formed by way of dry etching.
In conclusion above-mentioned photodiode 100, longitudinal direction is added around the second conduction type electrode district 16 through the
The conductive extension area 18 of one conductivity type substrate 14, it is possible to achieve having lateral depletion to edge under reverse bias, reaches raising sense
Light area utilization rate and the purpose for reducing electric leakage.
It please join Fig. 5~Fig. 9, a kind of manufacture method for photodiode that present pre-ferred embodiments provide, including it is following
Step：
The first conductivity type substrate 104 is formed on the first conduction type electrode district 102；
The ring-shaped groove for running through first conductivity type substrate 104 in longitudinal direction is formed in first conductivity type substrate 104
106；
In the conductive extension area 108 of the interior formation of the ring-shaped groove 106, the longitudinal direction of conduction extension area 108 is through first conduction
Type substrates 104 and connect the first conduction type electrode district 102；And
The second conduction type electrode district 110 is formed in first conductivity type substrate 104, which encloses
Around the second conduction type electrode district 110.
Specifically, it is described to form first conductivity type substrate 104 on the first conduction type electrode district 102, including：
First conduction is formed on the first conduction type electrode district 102 by way of epitaxial growth or by way of bonding
Type substrates 104, as shown in Figure 5.
First conduction type electrode district 102 can be the highly doped N-type region domain formed of progress N-type impurity.First conductive-type
Type electrode district 102 can be used as cathode zone.
The material of first conductivity type substrate 104 includes but not limited to the materials such as silicon (Si), indium GaAs (InGaAs).The
The doping concentration of one conductivity type substrate 104 is than relatively low, and general control is in 5.0E14~2.0E11cm-3。
It is described that the ring for running through first conductivity type substrate 104 in longitudinal direction is formed in first conductivity type substrate 104
Shape groove 106, including：
The surface of first conductivity type substrate 104 is aoxidized, and the annular is formed by way of dry etching
Groove 106.
Specifically, Fig. 6 please be join, can be carried out by RIE (reactive ion etching) technique to the first conductivity type substrate 104
Dig ring-shaped groove (Trench) 106.
For example, the surface of the first shown in figure 6 conductivity type substrate 104 can be aoxidized to form barrier layer
112, barrier layer 112 offers pattern openings 114 in a ring.During etching, the first conduction type for being exposed by pattern openings 114
The part of substrate 104 is etched, and then can form ring-shaped groove 106.
It please join Fig. 7, it is described in the interior formation conduction extension area 108 of the ring-shaped groove 106, including：
The first conductive type impurity doping is carried out to the side wall of the ring-shaped groove 106 to be formed by way of gas phase doping
Electrode extension regions 116；
The ring-shaped groove 106 formed with the electrode extension regions 116 is filled using polycrystalline material, at the same it is more to this
Brilliant material carries out first conductive type impurity doping to form conductive layer 118, which surrounds the conductive layer
118。
Electrode extension regions 116 and conductive layer 118 constitute conductive extension area 108.The effect of conductive layer 118 is to prolong electrode
Stretch area 116 can equipotential, and then improve the conductive uniformity of conductive extension area 108, and can be further anticreep.
It is preferred that Fig. 8 please be join, to ensure the end face of the conductive extension area 108 exposed to the first conductivity type substrate 104 not
Possible conduction is produced with the second conduction type electrode district 110, second conduction is formed in first conductivity type substrate 104
Before type electrode area 110, the manufacture method of photodiode is further comprising the steps of：
First conductivity type substrate 104 is surface-treated with the exposure conduction extension area 108；
Surface oxidation is carried out to first conductivity type substrate 104 to form insulating layer 120, which covers cruelly
The end face of the conduction extension area 108 of first conductivity type substrate 104 is exposed at, which offers insulating layer openings
122；
It is described to form the second conduction type electrode district 110 in first conductivity type substrate 104, including：
In first conductivity type substrate by way of the insulating layer openings 122 and using surface impurity injection and diffusion
The second conduction type electrode district 110 is formed on 104.
Specifically, when forming conductive extension area 108, Fig. 7 please be join, due to polycrystalline material and the covering of oxide 124 first
The surface of conductivity type substrate 104, therefore, can be first to first conduction type before the second conduction type electrode district 110 is formed
Substrate 104 is surface-treated with the exposure conduction extension area 108.
For example, surface grinding throwing is carried out to the first conductivity type substrate 104 by way of CMP (chemically mechanical polishing)
Light, to remove the polycrystalline material on surface and oxide 124 and the conductive extension area 108 of exposure.Certainly, dry and wet can also be passed through
The step of mode of etching is to complete to remove polycrystalline material and oxide 124 and exposure conduction extension area 108 on surface.
Surface oxidation is carried out to the first conductivity type substrate 104 to form insulating layer 120 afterwards.Insulating layer openings 122 can
Formed by being etched to insulating layer 120.Then, inject and spread by insulating layer openings 122 and using surface impurity
Mode form the second conduction type electrode district 110.
It is preferred that to improve the light impingement rate of photodiode, Fig. 9 please be join, the manufacture method of photodiode further includes
Following steps：
Anti-reflecting layer 126 is formed on the second conduction type electrode district 110.
Specifically, anti-reflecting layer 126 can be formed in the second conductive-type by way of insulating layer openings 122 and using deposition
On type electrode district 110.The material of anti-reflecting layer 126 is, for example, silicon nitride.
It is preferred that being electrically connected photodiode for convenience of external circuit, Fig. 9 please be join, the manufacture method of photodiode is also
Including forming the step of first electrode 128 is with second electrode 130.
The step of forming first electrode 128 includes：First electrode is formed in the bottom surface of the first conduction type electrode district 102
128, to be located at the first conduction type electrode district 102 opposite two for the first electrode 128 and first conductivity type substrate 104
Side.
The step of forming second electrode 130 includes：Anti-reflecting layer opening 132, the anti-reflecting layer are formed in anti-reflecting layer 126
Opening 132 exposes a part for the second conduction type electrode district 110；
Second electrode 130 is formed in the part of the second conduction type electrode district 110, which wears
If the anti-reflecting layer opening 132.
Specifically, first electrode 128 can be used as cathode, it is electrically connected the first conduction type electrode district 102.In an example
In son, the material of first electrode 128 is aluminium, and can be formed in by way of deposition on the first conduction type electrode district 102.
Second electrode 130 can be used as anode, it is electrically connected the second conduction type electrode district 110.In one example,
The material of two electrodes 130 is aluminium, and can be formed in by way of deposition on the second conduction type electrode district 110.
Anti-reflecting layer opening 132 can for example be formed by way of dry etching.
It should be noted that the part that the manufacture method of the photodiode of the present embodiment is not deployed, can join above implementation
The same or like part of the photodiode 100 of example, details are not described herein.Similarly, the photoelectricity two of above example
The not deployed part of pole pipe 100, can also join the same or like portion of the manufacture method of the photodiode of the present embodiment
Point.
In conclusion photodiode obtained by the manufacture method of above-mentioned photodiode, in the second conduction type electrode
The conductive extension area 108 that the first conductivity type substrate is run through in longitudinal direction is added around area 110, it is possible to achieve horizontal under reverse bias
To edge is depleted to, achieve the purpose that to improve photosensitive area utilization rate and reduce to leak electricity.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example describe
Structure, material or feature are contained at least one embodiment of the present invention or example.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can combine in an appropriate manner in any one or more embodiments or example.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that：Not
In the case of departing from the principle of the present invention and objective a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.
Claims (17)
- A kind of 1. photodiode, it is characterised in that including：First conduction type electrode district；First conductivity type substrate, first conductivity type substrate are arranged on the first conduction type electrode district；Second conduction type electrode district, the second conduction type electrode district are arranged in first conductivity type substrate；Conductive extension area, the conduction extension area surround the second conduction type electrode district, the conduction extension area longitudinally through this One conductivity type substrate and connect the first conduction type electrode district.
- 2. photodiode as claimed in claim 1, it is characterised in that further include：First electrode, the first electrode are arranged on the bottom surface of the first conduction type electrode district and are electrically connected first conduction type Electrode district, the first electrode and first conductivity type substrate both sides that to be located at the first conduction type electrode district opposite.
- 3. photodiode as claimed in claim 2, it is characterised in that further include：Second electrode, the second electrode are arranged on the second conduction type electrode district and are electrically connected the second conduction type electrode Area.
- 4. photodiode as claimed in claim 3, it is characterised in that further include：Anti-reflecting layer, the anti-reflecting layer are arranged on the second conduction type electrode district；The anti-reflecting layer offers anti-reflecting layer opening, which wears the anti-reflecting layer opening.
- 5. photodiode as claimed in claim 4, it is characterised in that further include：Insulating layer, the insulating layer are formed in the second conduction type electrode district and first conductivity type substrate, and are covered sudden and violent It is exposed at the end face of the conduction extension area of first conductivity type substrate；The insulating layer offers insulating layer openings, which exposes the anti-reflecting layer and the second electrode.
- 6. photodiode as claimed in claim 1, it is characterised in that the conduction extension area includes：Conductive layer；AndElectrode extension regions, the electrode extension regions surround the conductive layer, which is electrically connected the conductive layer.
- 7. photodiode as claimed in claim 1, it is characterised in that first conductivity type substrate includes：Depleted region, the conduction extension area surround the depleted region.
- 8. photodiode as claimed in claim 7, it is characterised in that the depleted region includes：Photosensitive region, the photosensitive region are located between the first conduction type electrode district and the second conduction type electrode district.
- 9. a kind of manufacture method of photodiode, it is characterised in that comprise the following steps：The first conductivity type substrate is formed on the first conduction type electrode district；The ring-shaped groove for running through first conductivity type substrate in longitudinal direction is formed in first conductivity type substrate；Conductive extension area is formed in the ring-shaped groove, which longitudinally runs through first conductivity type substrate and connection The first conduction type electrode district；AndThe second conduction type electrode district is formed in first conductivity type substrate, which surrounds second conductive-type Type electrode district.
- 10. the manufacture method of photodiode as claimed in claim 9, it is characterised in that described in first conduction type First conductivity type substrate is formed on electrode district, including：This is formed on the first conduction type electrode district by way of epitaxial growth or by way of bonding first to lead Electric type substrates.
- 11. the manufacture method of photodiode as claimed in claim 9, it is characterised in that described in first conduction type The ring-shaped groove for running through first conductivity type substrate in longitudinal direction is formed in substrate, including：The surface of first conductivity type substrate is aoxidized, and the ring-shaped groove is formed by way of dry etching.
- 12. the manufacture method of photodiode as claimed in claim 9, it is characterised in that the shape in the ring-shaped groove Into the conduction extension area, including：Side wall the first conductive type impurity doping of progress to the ring-shaped groove by way of gas phase doping is prolonged with forming electrode Stretch area；The ring-shaped groove formed with the electrode extension regions is filled using polycrystalline material, while the polycrystalline material is carried out First conductive type impurity is adulterated to form conductive layer, which surrounds the conductive layer.
- 13. the manufacture method of photodiode as claimed in claim 9, it is characterised in that described in first conduction type The second conduction type electrode district is formed on substrate, including：The second conduction type electrode is formed in first conductivity type substrate by the way of surface impurity injects and spreads Area.
- 14. the manufacture method of photodiode as claimed in claim 9, it is characterised in that further comprising the steps of：First electrode, the first electrode and the first conductivity type substrate position are formed in the bottom surface of the first conduction type electrode district In the both sides that the first conduction type electrode district is opposite.
- 15. the manufacture method of photodiode as claimed in claim 9, it is characterised in that in first conductivity type substrate It is further comprising the steps of before upper formation the second conduction type electrode district：First conductivity type substrate is surface-treated with the exposure conduction extension area；Surface oxidation is carried out to first conductivity type substrate to form insulating layer, insulating layer covering is exposed to first conduction The end face of the conduction extension area of type substrates, the insulating layer offer insulating layer openings；It is described to form the second conduction type electrode district in first conductivity type substrate, including：Injected the insulating layer openings and using surface impurity with being formed by way of diffusion in first conductivity type substrate The second conduction type electrode district.
- 16. the manufacture method of photodiode as claimed in claim 15, it is characterised in that further comprising the steps of：Anti-reflecting layer is formed on the second conduction type electrode district.
- 17. the manufacture method of photodiode as claimed in claim 16, it is characterised in that further comprising the steps of：Anti-reflecting layer opening is formed in the anti-reflecting layer, which exposes one of the second conduction type electrode district Point；Second electrode is formed in the part of the second conduction type electrode district, which wears the anti-reflecting layer and open Mouthful.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1638146A (en) * | 1999-08-31 | 2005-07-13 | 松下电器产业株式会社 | High voltage soi semiconductor device |
| CN101807601A (en) * | 2010-03-25 | 2010-08-18 | 复旦大学 | Grid-control PNPN field-effect transistor by utilizing SiGe source electrode and preparation method thereof |
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| JPH01138754A (en) * | 1987-11-26 | 1989-05-31 | Shindengen Electric Mfg Co Ltd | Schottky diode |
| EP2156471A2 (en) * | 2007-05-07 | 2010-02-24 | Nxp B.V. | A photosensitive device and a method of manufacturing a photosensitive device |
| JP5105060B2 (en) * | 2007-11-16 | 2012-12-19 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| US8759935B2 (en) * | 2011-06-03 | 2014-06-24 | Infineon Technologies Austria Ag | Power semiconductor device with high blocking voltage capacity |
| CN103413822B (en) * | 2013-08-22 | 2016-05-18 | 中国电子科技集团公司第二十四研究所 | Reduce the method for floating empty buried regions semiconductor device creepage |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1638146A (en) * | 1999-08-31 | 2005-07-13 | 松下电器产业株式会社 | High voltage soi semiconductor device |
| CN101807601A (en) * | 2010-03-25 | 2010-08-18 | 复旦大学 | Grid-control PNPN field-effect transistor by utilizing SiGe source electrode and preparation method thereof |
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